CN104716116A - Embedded type sensor chip packaging structure and manufacturing method thereof - Google Patents
Embedded type sensor chip packaging structure and manufacturing method thereof Download PDFInfo
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- CN104716116A CN104716116A CN201410794722.9A CN201410794722A CN104716116A CN 104716116 A CN104716116 A CN 104716116A CN 201410794722 A CN201410794722 A CN 201410794722A CN 104716116 A CN104716116 A CN 104716116A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses an embedded type sensor chip packaging structure and a manufacturing method thereof and belongs to the field of integrated circuit packaging and sensor technology. The structure comprises at least one sensor chip, a sensor chip bonding pad, a sensor device structure component, media and a conducting circuit. The sensor chip bonding pad and the sensor device structure component are located on the top surface of the sensor chip and located on the same surface, at least one side face of the sensor chip is covered with the media, at least one step with a certain length is arranged on the media, the surface of the step is lower than the top surface of the sensor chip, the conducting circuit is located on the surface of the step, and the conducting circuit is connected with the sensor chip bonding pad along the surface of the step, the sidewall of the step and the surface of the sensor chip. According to the packaging structure, the step is formed on the media, secondary packaging of attaching elements such as glass and sapphire to the surface of the sensor chip is facilitated, step etching and other operations conducted on the sensor chip are avoided, cost is lowered, and the product packaging yield and reliability are improved. Meanwhile, the wafer level or panel level embedding fan-out process can be adopted when the structure is manufactured, the yield can be increased, and packaging cost is lowered.
Description
Technical field
The present invention relates to the technology such as microelectronic packaging technology, sensor technology and chip interconnect.
Background technology
Along with the intelligence degree of end product improves constantly, various sensor chip emerges in an endless stream.Sensing chip extends the application of the product such as smart mobile phone, panel computer, and such as, the appearance of fingerprint recognition chip just substantially increases the fail safe of the said goods.
For sensing chip, its maximum feature is that its chip surface exists induction region, and this region and its environmental stimuli that will identify are had an effect, and produces the signal of telecommunication that chip can identify and process.The distance of this region and environmental stimuli is short as far as possible, can be detected to make the signal produced.Current a lot of chip technology, chip bonding pad is generally also positioned at same surface, is drawn by chip bonding pad according to bonding wire mode, the distance in bonding wire height inevitably lifting induction region and the packaging body external world.In prior art, there is a solution to be adopt the mode of silicon through hole that the pad of censorchip surface is caused chip back, thus avoid at chip upper surface routing.But silicon puncturing technique cost is high, meanwhile, this technology easily causes damage to sensing chip itself, and reliability is low.
Sensor performance problem is affected higher than censorchip surface for solving bonding wire, domestic Hui Ding Science and Technology Co., Ltd. proposes a kind of at sensing chip edge making step, chip surface pad is caused this step place by conductive layer, and then carries out routing (CN201420009042).Which avoids the impact of bonding wire on the distance in induction region and the packaging body external world, but, step technique is made comparatively complicated at silicon face, simultaneously, the etching of sensing chip itself is formed to the processing eases such as step, thinning, metal line and cause wafer damage, or produce the reliability decrease that the defects such as micro-crack make product.
The Apple of the U.S. discloses the patent (US20140285263A1) of a sensor package aspect, it adopts and forms induction region with deposition technique on a silicon substrate, above-mentioned silicon substrate marginal existence slope, so that draw the signal of telecommunication that induction region produces by conductive layer.The routing pad of this sensing chip is positioned at the below on slope, silicon substrate place, avoid the impact of bonding wire on the distance in induction region and the packaging body external world, but, manufacture step on a silicon substrate, thinning, metal line cost is high, yields is low, and product exists long-term reliability risk.
Summary of the invention
The present invention is directed to sensing chip, particularly fingerprint recognition class chip provides a kind of low cost, simply, the encapsulation that reliability is high and interconnection Integrated Solution, dielectric material is utilized to carry out coated to sensing chip, and the second surface formed on dielectric material lower than chip surface, and the pad on sensing chip is drawn out to second surface by conducting wire by vertical sidewall on medium or slope, conductive layer is on a second surface used for carrying out electrical interconnection with outside by bonding wire, make bonding wire height lower than chip surface, avoid and cutting is carried out to sensing chip itself, the operations such as borehole.
A kind of flush type sensing chip encapsulating structure, described structure comprises at least one sensing chip, sensing chip pad, senser element structure division, medium and conducting wire; Described sensing chip pad and senser element structure division are positioned at the end face of sensing chip, sensing chip pad and senser element structure division are positioned at same surface, at least one side of sensing chip is coated with medium, medium has the step of a certain length at least, described ledge surface is lower than the end face of sensing chip, ledge surface has conducting wire, and conducting wire is connected along ledge surface, mesa sidewall, censorchip surface with sensing chip pad.
The advantage of this structure is that of avoiding and etches sensing chip itself, connect up, as simple in moulding compound made step technical maturity at dielectric material, can improve encapsulating products yield, reduce failure risk.Meanwhile, dielectric material forms step, secondary encapsulation can be implemented to this sensing chip, such as, at censorchip surface attachment glass or sapphire, the metal pad on dielectric material surface is interconnected to pcb board etc.
Another one advantage is that the method for this structure of preparation uses for reference fan-out-type wafer-level packaging (wafer level fanout package, FOWLP) method.After chip manufacture completes, through test sorting, carry out scribing, true good sensing chip (KGD) is positioned on carrying disk, configure wafer again utilizing the mode of mold to be combined into, then use wafer process to carry out again wiring layer and processing, finally cut into slices and namely obtain packaging body.By FOWLP technique, can process costs be reduced, especially adopt large-sized disk or panel to do carrying tablet.
The invention discloses a kind of preparation method of flush type sensing chip encapsulating structure, described method comprises:
Step one: at carrying tablet surface rubberizing film or coated polymer bonding layer material;
Step 2: adopt the mode faced down to be positioned on glued membrane the sensing chip having made sensing chip pad and senser element structure division, described sensing chip has several, has certain distance between sensing chip;
Step 3: dielectric overlay on sensing chip, and flattens medium;
Step 4: carrying tablet is peeled off, and removes glued membrane;
Step 5: prepare groove on the medium of censorchip surface side, groove is between sensing chip;
Step 6: arrange conducting wire at censorchip surface and medium flute surfaces, conducting wire is connected with sensing chip pad;
Step 7: in the groove middle part cutting and separating of medium, form described encapsulating structure.
The invention discloses the preparation method of another kind of flush type sensing chip encapsulating structure, described method comprises:
Step one: at carrying tablet surface coated media material;
Step 2: adopt the mode faced up to be positioned on dielectric surface the sensing chip having made sensing chip pad and senser element structure division, described sensing chip has several, has certain distance between sensing chip;
Step 3: use dielectric overlay sensing chip, the induction region be positioned on senser element structure division can expose, and also can cover;
Step 4: carrying tablet is separated with dielectric material;
Step 5: prepare groove on the medium of censorchip surface side, groove is between sensing chip;
Step 6: arrange conducting wire at censorchip surface and medium flute surfaces, conducting wire is connected with sensing chip pad;
Step 7: in the groove middle part cutting and separating of medium, form described encapsulating structure.
The method can use 8 cun, 12 cun of wafers or large size panel, the chip after after thinning, cutting, test is positioned on carrying tablet, therefore can improves productive rate, reduce costs.The course of processing and technique have used for reference field of semiconductor package wafer scale fan-out-type (fan-out) technology, comparative maturity, embodiment simple possible.
Accompanying drawing explanation
Fig. 1 is the sensing chip schematic diagram that the embodiment of the present invention one has completed encapsulation, and Figure 1A dielectric layer mesa sidewall is slope; In Figure 1B, mesa sidewall is right angle;
Fig. 2 is the schematic diagram of the embodiment of the present invention one sensing chip and substrate interconnect, and Fig. 2 A mesa sidewall is the interconnection network on slope; Fig. 2 B mesa sidewall is the interconnection network at right angle;
Fig. 3 is the process schematic of present invention process embodiment one;
Fig. 3 A is the schematic diagram of carrying tablet;
At carrying tablet surface rubberizing film or the schematic diagram of bonding layer material in Fig. 3 B;
Fig. 3 C is by the schematic diagram of sensing chip face bonding on the glued membrane of carrying tablet surface;
Fig. 3 D is by schematic diagram coated for sensing chip with dielectric material;
Carrying tablet is peeled off and removes the schematic diagram of glued membrane by Fig. 3 E;
Fig. 3 F is the schematic diagram forming groove;
Fig. 3 G is the schematic diagram forming conducting wire and sensing chip interconnected on dielectric surface and groove.
In figure, 1 is sensing chip, and 2 is sensing chip pad, and 3 is senser element structure division, and 4 is medium, and 5 is conducting wire, and 6 is pad, and 7 is bonding wire, and 8 is substrate pads, and 9 is substrate, and 10 is carrying tablet, and 11 is glued membrane.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Embodiment one:
As shown in Figure 1, a kind of flush type sensing chip encapsulating structure, described structure comprises at least one sensing chip 1, sensing chip pad 2, senser element structure division 3, medium 4 and conducting wire 5; Described sensing chip pad 2 and senser element structure division 3 are positioned at the end face of sensing chip 1, sensing chip pad 2 and senser element structure division 3 are positioned at same surface, at least one side of sensing chip 1 is coated with medium 4, medium 4 has the step of a certain length at least, described ledge surface is lower than the end face of sensing chip 1, ledge surface has conducting wire 5, and conducting wire 5 is connected along ledge surface, mesa sidewall, sensing chip 1 surface with sensing chip pad 2.
Described sensing chip 1 has completed chip bonding pad processing.Described sensing chip, can be fingerprint identification chip, sensing chip pad 2 be generally the top-level metallic of chip.Sensing chip 1 is thinned to certain thickness, is 200 microns in the present embodiment.
Figure 1A dielectric layer mesa sidewall is slope, and in Figure 1B, mesa sidewall is right angle.
Described structure also includes pad 6, and described conducting wire 5 is coated with another layer of protective medium, and described another layer of protective medium has opening, and conducting wire 5 is exposed from opening part, is manufactured with pad 6 at the bared end of conducting wire 5.
Described medium 4 is the polymeric media such as capsulation material or the polyimides materials such as epoxy resin.
Described senser element structure division 3 has induction region, induction region can exposed or its on be coated with medium 4.
The step of medium 4 is the slope having certain angle near the sidewall of sensing chip 1, or perpendicular to the surface of sensing chip 1.
The vertical range on described ledge surface and sensing chip pad 2 surface is greater than 10 microns.
Described conducting wire 5 is one or more compositions in aluminium, copper, gold, titanium, nickel metal.
Described conducting wire 5 can be embedded in 4 layers, described medium, also can be positioned at described medium 4 layers of surface.
As shown in Figure 2, Fig. 2 A mesa sidewall is the interconnection network on slope, and Fig. 2 B mesa sidewall is the interconnection network at right angle.
Sensing chip encapsulating structure is connected with substrate 9, substrate has substrate pads 8, metal bonding wire 7 connection substrate pad 8 and pad 6.Substrate 8 can be flexible base, board, may also be rigid substrates.
As shown in Figure 3, a kind of preparation method of flush type sensing chip encapsulating structure, described method comprises:
Step one: at 12 cun of surperficial rubberizing films 11 of carrying tablet 10, use vacuum film sticking equipment, glued membrane is dry film, and carrying tablet 10 is silicon, glass or stainless steel;
Step 2: use chip-to-wafer bonder (die to wafer bonder), the mode faced down is adopted to be positioned on glued membrane 11 sensing chip 1 having made sensing chip pad 2 and induction region, the spacing of sensing chip 1 320 microns;
Step 3: mold covers sensing chip 1, flatten by the mode of grinding, polishing the moulding compound medium 4 covered on sensing chip 1, moulding compound medium 4 thickness is greater than sensing chip 1 thickness, is namely greater than 200 microns;
Step 4: tear bonding open, employing is torn bonding apparatus open and the mold material medium 4 of carrying tablet 10 from parcel sensing chip 1 is peeled off, and tearing bonding open can be after thermoplastic glued membrane, and machinery pulls open mold material medium 4, then cleans mold material medium 4, removes contamination;
Step 5: moulding compound medium 4 is overturn, sensing chip 1 surface is upwards; Adopt cutter to cut the method for drawing, the moulding compound medium 4 between sensing chip 1 prepares groove, and gash depth is greater than 10 microns, and the present embodiment groove shape is inverted trapezoidal, and the degree of depth is 120 microns, and bottom width is 160 microns, A/F 240 microns;
Step 6: carry out metal line on surface, arrange conducting wire 5 on sensing chip 1 surface and medium 4 flute surfaces, conducting wire 5 is connected with sensing chip pad 2; By photoresist gluing, photoetching, development, adhesion layer, Seed Layer physical deposition, plating forms conducting wire, can form the metal level of titanium/copper/nickel/gold, then remove photoresist, wet etching adhesion layer, Seed Layer, forms titanium/copper metal line layer; Also can be deposited by metal, gluing, photoetching, development, metal etch form titanium/aluminium, and the present embodiment is physical deposition 200 nano-titanium, 3 microns of aluminium;
Step 7: in the groove middle part cutting and separating of medium 4, obtains the said encapsulating structure of the present invention.
Further, step 6 is substitutable for, and conducting wire 5 is coated with medium 4, and it exposes from medium 4 groove upper surface open, is then connected with bonding wire 7.
Described glued membrane 11 also can be bonding layer material.
Described groove is exactly the step of encapsulating structure.
Embodiment two:
A preparation method for flush type sensing chip encapsulating structure, described method comprises:
Step one: at carrying tablet 10 surperficial coated media 4 material, carrying tablet 10 is silicon, glass or stainless steel;
Be 12 cun of silicon wafers in the present embodiment, dielectric material can be but be not limited to epoxy powder coating material, and coating method can be but be not limited to spin coating mode;
Step 2: adopt the mode faced up to be positioned on medium 4 material surface the sensing chip 1 having made sensing chip pad 2 and induction region, described sensing chip 1 has several, has certain distance between sensing chip 1;
Step 3: cover sensing chip 1 with medium 4 material, the present embodiment adopts plastic package method, coated for sensing chip 1, sensing chip 1 surface is exposed simultaneously;
Step 4: employing is torn bonding apparatus open and is separated with medium 4 material by carrying tablet 10, and tearing bonding open can be after thermoplastic glued membrane, and machinery pulls open mold material medium 4, then cleans mold material medium 4, removes contamination;
Step 5: prepare groove on sensing chip 1 surperficial side medium 4, groove is between sensing chip 1;
Step 6: adopt laser etching method to be exposed by sensing chip pad 2, is arranged conducting wire 5 on sensing chip 1 surface and medium 4 flute surfaces, is connected by conducting wire 5 with sensing chip pad 2; Carry out metal line on medium 4, sensing chip pad 2 surface, can pass through gluing, photoetching, development, Seed Layer physical deposition, plating, wet etching forms titanium/copper metal line layer, then changes nickel plating/gold; Also can be deposited by metal, gluing, photoetching, development, metal etch form titanium/aluminium, and the present embodiment is titanium/copper/nickel/gold, and thickness is respectively 0.1 micron, 2 microns, 1 micron and 0.05 micron;
Step 7: in the groove middle part cutting and separating of medium 4, obtains the said encapsulating structure of the present invention.
Further, step 6 is substitutable for, and conducting wire 5 is coated with another layer of protective medium, and described another layer of protective medium has opening, and conducting wire 5 is exposed from opening part, is manufactured with pad 6 at the bared end of conducting wire 5, and described pad 6 is connected with bonding wire 7.
The conducting wire 5 of described step 6 is made up of one or more in titanium, copper, nickel, gold, aluminium.
The foregoing is only a preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (21)
1. a flush type sensing chip encapsulating structure, it is characterized in that, described structure comprises at least one sensing chip (1), sensing chip pad (2), senser element structure division (3), medium (4) and conducting wire (5), described sensing chip pad (2) and senser element structure division (3) are positioned at the end face of sensing chip (1), sensing chip pad (2) and senser element structure division (3) are positioned at same surface, sensing chip (1) at least one side is coated with medium (4), medium (4) has the step of a certain length at least, described ledge surface is lower than the end face of sensing chip (1), ledge surface has conducting wire (5), conducting wire (5) is along ledge surface, mesa sidewall, sensing chip (1) surface is connected with sensing chip pad (2).
2. a kind of flush type sensing chip encapsulating structure according to claim 1, it is characterized in that, described sensing chip (1) is fingerprint identification chip.
3. a kind of flush type sensing chip encapsulating structure according to claim 1; it is characterized in that; described structure also includes pad (6); described conducting wire (5) is coated with another layer of protective medium; described another layer of protective medium has opening; conducting wire (5) is exposed from opening part, is manufactured with pad (6) at the bared end of conducting wire (5).
4. a kind of flush type sensing chip encapsulating structure according to claim 1, it is characterized in that, described medium (4) is the polymeric media such as capsulation material or the polyimides materials such as epoxy resin.
5. a kind of flush type sensing chip encapsulating structure according to claim 1, is characterized in that, described senser element structure division (3) has induction region, induction region can exposed or its on be coated with medium (4).
6. a kind of flush type sensing chip encapsulating structure according to claim 1, it is characterized in that, the step of medium (4) is the slope having certain angle near the sidewall of sensing chip (1), or perpendicular to the surface of sensing chip (1).
7. a kind of flush type sensing chip encapsulating structure according to claim 1, is characterized in that, the vertical range on described ledge surface and sensing chip pad (2) surface is greater than 10 microns.
8. a kind of flush type sensing chip encapsulating structure according to claim 1, is characterized in that, described conducting wire (5) are one or more compositions in aluminium, copper, gold, titanium, nickel metal.
9. a kind of flush type sensing chip encapsulating structure according to claim 1, is characterized in that, described conducting wire (5) can be embedded in described medium (4) layer, also can be positioned at described medium (4) layer surface.
10. a preparation method for flush type sensing chip encapsulating structure, is characterized in that, described method comprises:
Step one: at the surperficial rubberizing film (11) of carrying tablet (10) or coated polymer bonding layer material;
Step 2: adopt the mode faced down to be positioned on glued membrane (11) sensing chip (1) having made sensing chip pad (2) and senser element structure division (3), described sensing chip (1) has several, and sensing chip has certain distance between (1);
Step 3: medium (4) covers on sensing chip (1), and flatten medium (4);
Step 4: carrying tablet (10) is peeled off, and removes glued membrane (11);
Step 5: prepare groove on sensing chip (1) surperficial side medium (4), groove is positioned between sensing chip (1);
Step 6: arrange conducting wire (5) on sensing chip (1) surface and medium (4) flute surfaces, conducting wire (5) are connected with sensing chip pad (2);
Step 7: in the groove middle part cutting and separating of medium (4), form described encapsulating structure.
The preparation method of 11. a kind of flush type sensing chip encapsulating structures according to claim 10, it is characterized in that, the carrying tablet (10) of described step one is silicon, glass or stainless steel.
The preparation method of 12. a kind of flush type sensing chip encapsulating structures according to claim 10, it is characterized in that, the spacing of the sensing chip (1) of described step 2 is greater than 100 microns.
The preparation method of 13. a kind of flush type sensing chip encapsulating structures according to claim 10, is characterized in that, described step 3 adopts molding process, is that medium (4) covers sensing chip (1) with moulding compound.
The preparation method of 14. a kind of flush type sensing chip encapsulating structures according to claim 10, is characterized in that, the flatening method of described step 3 medium (4) comprises grinding and polishing.
The preparation method of 15. a kind of flush type sensing chip encapsulating structures according to claim 10, it is characterized in that, described step 5 adopts laser ablation or cutter cutting process to be processed to form groove on sensing chip (1) side medium (4).
The preparation method of 16. a kind of flush type sensing chip encapsulating structures according to claim 10, is characterized in that, described step 6 conducting wire (5) material is made up of one or more in titanium, copper, nickel, gold, aluminium.
The preparation method of 17. a kind of flush type sensing chip encapsulating structures according to claim 10, it is characterized in that, the preparation of described step 6 conducting wire (5) by adhesion layer, Seed Layer physical vapour deposition (PVD), photoresist coating, photoetching, development, electroplate, remove photoresist, Seed Layer and adhesion layer metal etch semiconductor technology complete.
The preparation method of 18. a kind of flush type sensing chip encapsulating structures according to claim 10; it is characterized in that; step 6 is substitutable for; conducting wire (5) are coated with another layer of protective medium; described another layer of protective medium has opening; conducting wire (5) is exposed from opening part, is manufactured with pad (6) at the bared end of conducting wire (5), and described pad (6) is connected with bonding wire (7).
The preparation method of 19. 1 kinds of flush type sensing chip encapsulating structures, is characterized in that, described method comprises:
Step one: at carrying tablet (10) surperficial coated media (4) material;
Step 2: adopt the mode faced up to be positioned over medium (4) on the surface the sensing chip (1) having made sensing chip pad (2) and senser element structure division (3), described sensing chip (1) has several, and sensing chip has certain distance between (1);
Step 3: cover sensing chip (1) with medium (4), the induction region be positioned on senser element structure division (3) can expose, and also can cover;
Step 4: carrying tablet (10) is separated with medium (4) material;
Step 5: prepare groove on sensing chip (1) surperficial side medium (4), groove is positioned between sensing chip (1);
Step 6: conducting wire (5) is set on sensing chip (1) surface and medium (4) flute surfaces, is connected with sensing chip pad (2) by conducting wire (5);
Step 7: in the groove middle part cutting and separating of medium (4), form described encapsulating structure.
The preparation method of 20. a kind of flush type sensing chip encapsulating structures according to claim 19, it is characterized in that, the conducting wire (5) of described step 6 is made up of one or more in titanium, copper, nickel, gold, aluminium.
The preparation method of 21. a kind of flush type sensing chip encapsulating structures according to claim 19; it is characterized in that; step 6 is substitutable for; conducting wire (5) are coated with another layer of protective medium; described another layer of protective medium has opening; conducting wire (5) is exposed from opening part, is manufactured with pad (6) at the bared end of conducting wire (5), and described pad (6) is connected with bonding wire (7).
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| CN109872987A (en) * | 2019-03-08 | 2019-06-11 | 中国科学院微电子研究所 | System encapsulation board structure with radiator structure and preparation method thereof |
| CN109872987B (en) * | 2019-03-08 | 2022-03-08 | 中国科学院微电子研究所 | System packaging board card structure with heat dissipation structure and manufacturing method thereof |
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