CN111201590A - 薄膜晶体管及其制备方法、阵列基板和显示装置 - Google Patents
薄膜晶体管及其制备方法、阵列基板和显示装置 Download PDFInfo
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- CN111201590A CN111201590A CN201780095837.0A CN201780095837A CN111201590A CN 111201590 A CN111201590 A CN 111201590A CN 201780095837 A CN201780095837 A CN 201780095837A CN 111201590 A CN111201590 A CN 111201590A
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- insulating layer
- layer
- barrier pattern
- thin film
- film transistor
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
提供一种薄膜晶体管及其制备方法、阵列基板和显示装置。薄膜晶体管包括栅极(41)、与栅极电性绝缘的有源层(20)、源极和漏极，以及设置在栅极和有源层(20)之间的栅绝缘层(31)，源极和漏极分别与有源层相接触，栅绝缘层和栅极通过以下步骤形成：在衬底(10)的上表面形成有源层；在有源层和衬底的上表面依次形成绝缘层(30)和金属层(40)；通过第一阻挡图案(511)对金属层进行第一图案化处理，以形成栅极；在第一阻挡图案存在的条件下，通过第二阻挡图案(522)对绝缘层进行第二图案化处理，以形成栅绝缘层。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/115043 WO2019109310A1 (zh) | 2017-12-07 | 2017-12-07 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111201590A true CN111201590A (zh) | 2020-05-26 |
Family
ID=66750011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780095837.0A Pending CN111201590A (zh) | 2017-12-07 | 2017-12-07 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111201590A (zh) |
| WO (1) | WO2019109310A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130016A (ja) * | 2007-11-21 | 2009-06-11 | Seiko Epson Corp | 半導体装置の製造方法及び電子機器 |
| CN102130009A (zh) * | 2010-12-01 | 2011-07-20 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
| CN103137495A (zh) * | 2011-11-30 | 2013-06-05 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US20140203249A1 (en) * | 2013-01-23 | 2014-07-24 | Snu R&Db Foundation | Quasi-Surface Emission Vertical-Type Organic Light-Emitting Transistors And Method Of Manufacturing The Same |
| CN107359205A (zh) * | 2017-07-28 | 2017-11-17 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011102217A1 (en) * | 2010-02-19 | 2011-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN105977306A (zh) * | 2016-06-21 | 2016-09-28 | 北京大学深圳研究生院 | 一种自对准薄膜晶体管及其制备方法 |
-
2017
- 2017-12-07 WO PCT/CN2017/115043 patent/WO2019109310A1/zh active Application Filing
- 2017-12-07 CN CN201780095837.0A patent/CN111201590A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130016A (ja) * | 2007-11-21 | 2009-06-11 | Seiko Epson Corp | 半導体装置の製造方法及び電子機器 |
| CN102130009A (zh) * | 2010-12-01 | 2011-07-20 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
| CN103137495A (zh) * | 2011-11-30 | 2013-06-05 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| US20140203249A1 (en) * | 2013-01-23 | 2014-07-24 | Snu R&Db Foundation | Quasi-Surface Emission Vertical-Type Organic Light-Emitting Transistors And Method Of Manufacturing The Same |
| CN107359205A (zh) * | 2017-07-28 | 2017-11-17 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019109310A1 (zh) | 2019-06-13 |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200526 |
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