CN111192858B - 半导体封装件及其制造方法 - Google Patents

半导体封装件及其制造方法 Download PDF

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Publication number
CN111192858B
CN111192858B CN201910232291.XA CN201910232291A CN111192858B CN 111192858 B CN111192858 B CN 111192858B CN 201910232291 A CN201910232291 A CN 201910232291A CN 111192858 B CN111192858 B CN 111192858B
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semiconductor device
recessed portion
semiconductor
heat sink
manufacturing
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CN111192858A (zh
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陈世伟
陈志华
潘信瑜
蔡豪益
庄立朴
郭庭豪
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种半导体封装件包括重布线结构、至少一个半导体装置、散热组件及包封材料。所述至少一个半导体装置设置在所述重布线结构上且电连接到所述重布线结构。所述散热组件设置在所述重布线结构上且包括凹陷部分及延伸部分，所述凹陷部分接纳所述至少一个半导体装置，所述延伸部分连接到所述凹陷部分且接触所述重布线结构，其中所述凹陷部分接触所述至少一个半导体装置。所述包封材料设置在所述重布线结构之上，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置。

Description

半导体封装件及其制造方法
技术领域
本发明涉及一种半导体封装件及其制造方法。
背景技术
由于各种电子组件(例如，晶体管、二极管、电阻器、电容器等)的集成密度的持续提高，半导体行业已经历快速增长。在很大程度上，集成密度的此种提高来自于最小特征尺寸(minimum feature size)的重复减小，此使得更多组件能够集成到给定区域中。随着近来对小型化、更高的速度及更大的带宽以及更低的功耗及延迟的需求增长，对更小且更具创造性的半导体管芯封装技术的需要也增加。
随着半导体装置尺寸减小，装置的密度增大。然而，随着处理能力的提高，封装装置产生的热量也增加了。如所预期的，在封装装置中存在的过多热量可能会且通常会降低装置性能。长时间曝光在过高温度下可能会降低装置的可靠性并缩短装置的工作寿命。
发明内容
本发明是针对一种半导体封装件及其制造方法，其能提高半导体封装件的热性能及散热效率，还减少了界面之间的热阻。
根据本发明的实施例，一种半导体封装件包括重布线结构、至少一个半导体装置、散热组件以及包封材料。半导体装置设置在所述重布线结构上且电连接到所述重布线结构。散热组件设置在所述重布线结构上且包括凹陷部分及延伸部分，所述凹陷部分接纳所述至少一个半导体装置，所述延伸部分连接到所述凹陷部分且接触所述重布线结构，其中所述凹陷部分连接所述至少一个半导体装置。包封材料设置在所述重布线结构之上，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置。
根据本发明的实施例，一种半导体封装件的制造方法包括下列步骤。在载体上提供散热组件，其中所述散热组件包括凹陷部分；在所述凹陷部分中设置至少一个半导体装置；在所述载体上形成包封材料，其中所述包封材料填充所述凹陷部分并包封所述至少一个半导体装置；在所述包封材料及所述散热组件之上形成重布线结构，其中所述重布线结构接触所述散热组件且电连接到所述至少一个半导体装置；以及移除所述载体。
根据本发明的实施例，一种半导体封装件的制造方法包括下列步骤。在载体上形成重布线结构；在所述重布线结构上安装至少一个半导体装置；在所述重布线结构上设置散热组件，其中所述散热组件包括用于接纳及连接所述至少一个半导体装置的凹陷部分；在所述重布线结构之上形成包封材料，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置；以及移除所述载体。
附图说明
结合附图阅读以下详细说明，会最好地理解本公开的各个方面。应注意，根据本行业中的标准惯例，各种特征并非按比例绘制。事实上，为论述清晰起见，可任意增大或减小各种特征的尺寸。
图1到图8示出根据一些实施例的半导体封装件的制造工艺中的各个阶段的示意性剖视图。
图9示出根据一些实施例的散热组件的示意性俯视图。
图10示出根据一些实施例的半导体封装件的制造工艺中的阶段的示意性剖视图。
图11示出根据一些实施例的半导体封装件的示意性剖视图。
图12到图16示出根据一些实施例的半导体封装件的制造工艺中的各个阶段的示意性剖视图。
[符号的说明]
20：载体
21：离型层
30：框架
40：刀锯
100、100'、100”：半导体封装件
101：集成电路晶片
110、110'：散热组件
112、112'：凹陷部分
114、114'：延伸部分
116：切口
117、124：界面材料
120a：半导体装置/第一半导体装置
120b：半导体装置/第二半导体装置
122a：导电块
122b：导电柱
125：焊料材料
130：包封材料
140、140'：重布线结构
142、142'：重布线路层/最上重布线路层
144、144'：介电层
150：电连接件
200：封装组件
S1：有源表面
S2：后表面
具体实施方式
以下公开内容提供用于实施所提供主题的不同特征的许多不同的实施例或实例。以下阐述组件及排列方式的具体实例以简化本公开。当然，这些仅为实例而非旨在进行限制。举例来说，在以下说明中，在第二特征之上或第二特征上形成第一特征可包括其中第一特征与第二特征被形成为直接接触的实施例，且也可包括其中第一特征与第二特征之间可形成附加特征从而使得第一特征与第二特征可不直接接触的实施例。另外，本公开在各种实例中可重复使用参考编号和/或字母。此种重复使用是为了简明及清晰起见，且自身并不表示所讨论的各个实施例和/或配置之间的关系。
此外，为易于说明，本文中可能使用例如“在…之下(beneath)”、“在…下方(below)”、“下部的(lower)”、“在…上方(above)”、“上部的(upper)”等空间相对性用语来阐述图中所示一个元件或特征与另一(其他)元件或特征的关系。所述空间相对性用语旨在除图中所绘示的取向外还囊括装置在使用或操作中的不同取向。装置可具有其他取向(旋转90度或处于其他取向)，且本文中所用的空间相对性描述语可同样相应地进行解释。
图1到图8示出根据一些实施例的半导体封装件的制造工艺中的各个阶段的示意性剖视图。在示例性实施例中，本文所公开的半导体封装件的制造工艺可为晶片级封装工艺的一部分。在一些实施例中，示出一个半导体装置来代表晶片的多个半导体装置，且示出一个单一封装件来代表从接下来的半导体制造工艺所获得的多个半导体封装件。图8所示的半导体封装件100的制造工艺可包括以下步骤。
参照图1，在一些实施例中，提供载体20。载体20可为玻璃载体、陶瓷载体或适用于半导体封装件100的制造工艺的任意载体。载体20可具有圆形俯视形状且可具有硅晶片的大小。在一些实施例中，载体20可涂布(coated)离型层(例如，图12所示的离型层21)。离型层的材料可为聚合物基质(polymer-based)的材料或适用于将载体20从设置在载体20上的上方组件剥离的任意材料。举例来说，离型层可为紫外(ultra-violet，UV)固化粘合剂、热固化粘合剂、光学透明粘合剂(optical clear adhesive)或光热转换(light-to-heatconversion，LTHC)粘合剂等，但是也可使用其他类型的离型层。另外，离型层也可适于允许光或信号通过。应注意，离型层及载体20的材料仅用于例示，且本公开并非仅限于此。
接着，在载体20上提供散热组件110。在一些实施例中，散热组件110包括凹陷部分112及延伸部分114。在一些实施例中，凹陷部分112设置在载体20上以使得凹陷部分112的底表面抵靠着载体20，且延伸部分114连接到凹陷部分112且如图1所示地往远离载体20的方向延伸。凹陷部分112被配置成用于接纳至少一个半导体装置(例如，图2及图3所示半导体装置120a、120b)。在本实施例中，散热组件110可呈例如冲压金属散热器(stamped metalheat sink)的形式，但本公开并非仅限于此。换句话说，散热组件110可通过对金属片进行冲压以在散热组件110上形成至少一个凹陷部分112来形成。在一些实施例中，散热组件110的材料可包括具有高导热性的金属，例如铜、铝或氧化铝(Al2O3)。举例来说，铜的导热性为约400W·m-1·K-1到约410W·m-1·K-1，铝的导热性为约230W·m-1·K-1到约240W·m-1·K-1，且氧化铝的导热性为约30W·m-1·K-1到约40W·m-1·K-1。应注意的是，由氧化铝形成的散热组件110可提供较高的硬度及机械强度以及良好的导热性。
现参照图2及图3，在散热组件110的凹陷部分112中设置至少一个半导体装置。在一些实施例中，在本文中示出多个半导体装置120a、120b，但本公开并非旨在对设置在凹陷部分112中的半导体装置的数目进行限制。在实施方式中的一者中，将要设置在凹陷部分112中的半导体装置包括如图3所示的第一半导体装置120a以及如图2所示的至少一个第二半导体装置120b(在本文中示出两个第二半导体装置120b)。因此，首先在凹陷部分112中设置第二半导体装置120。在一些实施例中，第二半导体装置120以并排方式排列在凹陷部分112中。在一些实施例中，第二半导体装置120b中的每一者可包括背对载体20(即，面朝上)的有源表面S1以及多个导电柱122b，所述多个导电柱122b设置在有源表面S1上且电连接到第二半导体装置120b的电接触件。在一些实施例中，有源表面S1是其中形成有电接触件的表面。也就是说，第二半导体装置120b中的每一者通过其后表面S2设置在散热组件110上，后表面S2与有源表面S1相对。在一些实施例中，后表面S2可为上面未形成有电接触件的非有源表面(inactive surface)。
接着，在第二半导体装置120b上堆叠第一半导体装置120a。在一些实施例中，第一半导体装置120a可包括背离载体20的有源表面S1以及多个导电块122a，所述多个导电块122a设置在第一半导体装置120a的有源表面上。导电块122a电连接到第一半导体装置120a的接垫。在一些示例性实施例中，半导体装置120a、120b可为设计用于移动应用的装置管芯，且举例来说可包括电源管理集成电路(Power Management Integrated Circuit，PMIC)管芯及收发器(Transceiver，TRX)管芯。尽管图中示出一个第一半导体装置120a，但是在散热组件110上可放置更多半导体装置。在一些实施例中，导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面可大体上彼此齐平(即，共面)。
在一些实施例中，散热组件110与设置在散热组件110上的半导体装置120a、120b呈热转移(heat transfer)关系，且可通过界面材料124与半导体装置120a、120b接触(连接)。在一些实施例中，可省略界面材料124。在一些实施例中，界面材料124设置在凹陷部分112与第二半导体装置120b的后表面S2之间以使得第二半导体装置120b结合到散热组件110的凹陷部分112。界面材料124也可设置在第二半导体装置120b与第一半导体装置120a的后表面之间以使得第一半导体装置120a贴合到第二半导体装置120b。在一些实施例中，界面材料124可包括热界面材料(thermal interface material，TIM)或管芯贴合膜(dieattach film，DAF)等。在一些实施例中，界面材料124可包括导热材料且可为导热胶、油脂或导热粘合剂。界面材料124允许在半导体装置120a、120b的后表面S2与凹陷部分112的上表面之间进行热转移，并维持半导体装置120a、120b相对于散热组件110固定的定位。在替代实施例中，界面材料124可包括填隙料或石墨填充环氧树脂(例如，高级热转移粘合剂(Advanced Thermal Transfer Adhesive，ATTA))。本公开并非仅限于此。
现参照图4，在载体20上形成包封材料130。在一些实施例中，包封材料130填充凹陷部分112并包封半导体装置120a、120b。在一些实施例中，包封材料130直接接触散热组件110以减少界面之间的热阻。包封材料130可为单层式包封材料，所述单层式包封材料可包含由模塑工艺形成的模塑化合物。包封材料130的材料可包括环氧树脂或其他适合的树脂。举例来说，包封材料130可为含有化学填料的环氧树脂。在本实施例中，散热组件110是冲压金属片，其具有朝载体20弯曲的凹陷部分112以及远离载体20延伸的延伸部分114。通过这种配置，包封材料130也可填充载体20的上表面与延伸部分114的下表面之间的间隙。
图9示出根据一些实施例的散热组件的示意性俯视图。参照图4及图9二者，在一些实施例中，散热组件110还可包括多个切口(或孔)116，如图9所示。切口116贯穿散热组件110，以使得包封材料130可流过切口116以包封散热组件110。换句话说，包封材料130可通过切口116以均匀地填充凹陷部分112以及载体20与延伸部分114之间的间隙，而不会使空气困留(trapped)在凹陷部分112以及所述间隙中而降低散热效率。在一些实施例中，切口116可设置在凹陷部分112的侧壁上或延伸部分114上。本公开不对散热组件110上的切口116的配置方式及数目进行限制。
在一些实施例中，包封材料130露出导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面。详细来说，包封材料130的上表面可与导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面大体上齐平(即，共面)。在实施方式中的一者中，包封材料130形成在半导体装置120a、120b之上且可先覆盖导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面。接着，可对包封材料130的上表面执行薄化工艺。因此，包封材料130被研磨以露出导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面。在一些实施例中，薄化工艺可为例如机械研磨或化学机械抛光(chemicalmechanical polish，CMP)工艺，由此利用化学刻蚀剂及研磨剂来将包封材料130和/或导电柱122b的顶端、导电柱122a的顶端及延伸部分114的顶端进行反应并研磨掉。所得结构示出于图4中。在执行薄化工艺之后，包封材料130的上表面可与导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面大体上齐平，如图4所示。然而，尽管呈现了上述CMP工艺作为一个例示性实施例，但并不旨在仅限于所述实施例。作为另外一种选择，可使用任意其他适合的移除工艺来对包封材料130进行薄化。举例来说，作为另外一种选择可利用一系列化学刻蚀剂。作为另外一种选择可利用这种工艺以及任意其他适合的工艺，且所有这些工艺完全旨在包含于实施例的范围内。
在一些实施例中，包封材料130的上表面被研磨及抛光至导电柱122b、导电块122a及延伸部分114被露出。在一些实施例中，也可对导电柱122b的顶端、导电块122a的顶端及延伸部分114的顶端进行研磨以获得大体上平坦的表面。因此，包封材料130的研磨表面与导电柱122b的顶表面、导电块122a的顶表面及延伸部分114的顶表面大体上共面。
参照图5，在包封材料130及散热组件110之上形成重布线结构140。重布线结构140电连接到第一半导体装置120a的导电块122a及第二半导体装置120b的导电柱122b。即，第一半导体装置120a与第二半导体装置120b通过重布线结构140彼此电连接。换句话说，第一半导体装置120a及第二半导体装置120b通过倒装芯片结合技术安装在重布线结构140上。在一些实施例中，散热组件110与重布线结构140呈热转移关系。举例来说，重布线结构140可直接接触散热组件110的延伸部分114，以使得由半导体装置120a、120b产生的热量可不仅通过凹陷部分112散发，而且还通过由重布线结构140及延伸部分114形成的导热路径散发。在一些实施例中，可将多个介电层(例如，介电层144)与多个重布线路层(例如，重布线路层142)交替地堆叠在彼此顶部上以形成图5所示重布线结构140。重布线结构140至少包括介电层144及重布线路层142(即，最上重布线路层142)，重布线路层142电连接到半导体装置120a、120b及导电柱122b。在一些实施例中，重布线结构140的最上重布线路层142可直接接触散热组件110的延伸部分114以有利于散热效率。
现参照图6，在重布线结构140上设置多个电连接件150。在一些实施例中，重布线结构140还可包括用于进一步的电连接的凸块下金属(under bump metallurgy，UBM)层，且电连接件150可安装在凸块下金属层上或者直接设置在重布线结构140的最近的重布线路层上。在一些实施例中，在重布线结构140上还可安装有至少一个集成无源装置(integrated passive device，IPD)。电连接件150及集成无源装置电连接到重布线结构140。电连接件150的形成可包括在重布线结构140上放置焊料球以及接着使焊料球回焊。在替代实施例中，电连接件150的形成可包括执行镀覆工艺以在重布线结构140上形成焊料材料以及接着使焊料材料回焊。电连接件150也可包括导电柱或具有焊料顶盖的导电柱，导电柱或具有焊料顶盖的导电柱也可通过镀覆形成。集成无源装置可使用标准晶片制作技术(例如薄膜及光刻处理)来制作，且可通过例如倒装芯片结合或导线结合等安装在重布线结构140上。
现参照图6及图7，可接着移除图6所示载体20。在一些实施例中，通过直接剥除载体20上的离型层(如果有离型层的话)或者使其失去或减少粘性来将载体20从包封材料130及散热组件110分离。接着移除离型层以及载体20。举例来说，可使离型层曝光于UV光，以使得离型层失去或减少粘性，且由此可从包封材料130及散热组件110将载体20及离型层移除。
在本说明通篇中，包括散热组件110、半导体装置120a、120b、包封材料130、重布线结构140及电连接件150的如图6所示的所得结构(不包括载体20)被称为集成电路晶片101，集成电路晶片101呈晶片形式。因此，在移除载体20之后，接着将集成电路晶片101翻转并将集成电路晶片101贴合到框架30，如图7所示。框架30可包括粘合胶带并在单体化工艺期间将集成电路晶片101固持在适合的位置。接下来，可使用刀锯40来将集成电路晶片101切穿。在一些实施例中，刀锯40可为金刚石锯。刀锯40完全切穿集成电路晶片101以形成多个半导体封装件100(在本文中示出半导体封装件100中的一者)。
现参照图8，可将半导体封装件100结合和/或贴合到另一个封装组件200。在一些实施例中，使用电连接件150将半导体封装件100结合到封装组件200，封装组件200在一些示例性实施例中为例如印刷电路板(printed circuit board，PCB)。在一些实施例中，在半导体封装件100与封装组件200之间未结合有额外的中介层及封装衬底。在替代实施例中，将半导体封装件100结合到额外的封装件和/或衬底(未示出)，所述额外的封装件和/或衬底被进一步结合到印刷电路板。
参照图8，就通过上述制造工艺所形成的半导体封装件100的结构特性来说，半导体封装件100包括重布线结构140、半导体装置120a、120b、散热组件110、包封材料130及电连接件150。半导体装置120a、120b设置在重布线结构140上且电连接到重布线结构140。在一些实施例中，半导体装置120a、120b的有源表面面对重布线结构140且具有多个电接触件，所述多个电接触件通过导电块122a及导电柱122b电连接到重布线结构140。
在一些实施例中，散热组件110设置在重布线结构140上。在一些实施例中，散热组件110包括凹陷部分112及延伸部分114。凹陷部分112被配置成用于接纳半导体装置120a、120b。延伸部分114连接到凹陷部分112且朝重布线结构140延伸。在一些实施例中，凹陷部分112接触半导体装置120a、120b的后表面且延伸部分114接触重布线结构140。在实施方式中的一者中，延伸部分114直接接触重布线结构140的最上重布线路层142。在一些实施例中，半导体装置120a设置在重布线结构140上且半导体装置120b堆叠在半导体装置120a上，且凹陷部分接触半导体装置120b的后表面。在一些实施例中，半导体装置120b以并排方式堆叠在半导体装置120a上。包封材料130设置在重布线结构140之上且填充凹陷部分112以包封半导体装置120a、120b。
图10示出根据一些实施例的半导体封装件的制造工艺中的阶段的示意性剖视图。图11示出根据一些实施例的半导体封装件的示意性剖视图。应注意，图10及图11所示半导体封装件100'及其制造工艺含有与早先参照图1到图8所公开的半导体封装件100及其制造工艺相同或相似的许多特征。出于清晰及简明的目的，可不再对相同或相似的特征进行赘述，且相同或相似的参考编号表示相同或类似的组件。以下阐述图10及图11所示半导体封装件100'与图8所示半导体封装件100之间的主要差异。
现参照图10，在一些实施例中，散热组件110'可由硅晶片制成。举例来说，提供图10所示散热组件110'的方法可包括提供硅晶片以及在硅晶片中形成至少一个凹陷部分112'。凹陷部分112'在散热组件110'上的位置可对应于图1所示凹陷部分112的位置。凹陷部分112'可通过刻蚀工艺或任意其他适合的工艺形成。因此，延伸部分114'可被视为硅晶片的未经历刻蚀工艺的部分。在一些实施例中，散热组件110'是由硅制成，硅具有大的机械强度及良好的导热性。举例来说，硅的导热性为约100W·m-1·K-1到约130W·m-1·K-1。因此，由硅制成的散热组件110'可提供具有大的硬度及机械强度以及良好的导热性的半导体封装件100'。
接着，可对图10所示结构依序应用图2到图8所示相似的制造工艺以形成图11所示半导体封装件100'。在一些实施例中，包封材料130可仅填充散热组件110'的凹陷部分112'以对半导体装置120a、120b进行包封，因此不需要对散热组件110'上配置切口(例如，图9所示切口116)以供包封材料130从中流过。通过这种配置，凹陷部分112'可接触半导体装置120a、120b的后表面(可通过界面材料124)，且延伸部分114'可与重布线结构140(例如，最上重布线路层142)实体接触。由此，由半导体装置120a、120b产生的热量可不仅通过凹陷部分112散发，而且还通过由重布线结构140及延伸部分114'形成的导热路径散发。
图12到图16示出根据一些实施例的半导体封装件的制造工艺中的各个阶段的示意性剖视图。应注意，图12到图16所示半导体封装件100”及其制造工艺含有与早先参照图1到图8所公开的半导体封装件100及其制造工艺相同或相似的许多特征。出于清晰及简明的目的，可不再对相同或相似的特征进行赘述，且相同或相似的参考编号表示相同或类似的组件。以下阐述了图12到图16所示半导体封装件100”的制造工艺与图1到图8所示半导体封装件100的制造工艺之间的主要差异。
在一些实施例中，具有散热组件110的半导体封装件100”也可通过先重布线工艺(RDL first process)形成。举例来说，半导体封装件100”的制造工艺可包括以下工艺。现参照图12，在载体20上形成重布线结构140'。在一些实施例中，可在形成重布线结构140'之前在载体20上设置离型层21。载体20可为玻璃载体、陶瓷载体等，且载体20可具有圆形俯视形状且可具有硅晶片的大小。离型层21可由聚合物基质材料形成，所述聚合物基质材料可与载体20一起从将在后续步骤中形成的上覆(overlying)结构移除。在实施例中，离型层21是由环氧树脂基质热释放材料形成。在其他实施例中，离型层21可由紫外(UV)胶、热固化粘合剂、光学透明粘合剂或光热转换(LTHC)粘合剂等形成。离型层21可以液体的形式配置并进行固化。在替代实施例中，离型层21是层压膜(laminate film)且被层压到载体20上。离型层21的顶表面是齐平的且具有高共面度。
接着，可将多个介电层(例如，介电层144')与多个重布线路层(例如，重布线路层142')交替地堆叠在彼此顶部上以形成图12所示重布线结构140'。用于介电层的材料可选自与用于重布线结构140的介电层的候选材料相同的候选材料。重布线路层的形成可与重布线结构140的重布线路层的形成相同。
现参照图13，在重布线结构140'上安装至少一个半导体装置。在一些实施例中，在本文中示出多个半导体装置120a、120b，但本公开并非旨在对安装在重布线结构140'上的半导体装置的数目进行限制。举例来说，将要安装在重布线结构140'上的半导体装置可包括如图13所示的第一半导体装置120a以及至少一个第二半导体装置120b(在本文中示出两个第二半导体装置120b)。在一些实施例中，首先通过设置在第一半导体装置120a上的多个导电块122a将第一半导体装置120a安装在重布线结构140'上。接着，将第二半导体装置120b以例如并排方式堆叠在第一半导体装置120a上。在一些实施例中，在第二半导体装置120b的有源表面上设置多个导电柱122b。在本实施例中，半导体装置120a、120b的有源表面S1面对重布线结构140'，以使得半导体装置120a、120b通过导电块122a及导电柱122b安装在重布线结构140'上。
在一些实施例中，通过例如倒装芯片结合工艺将半导体装置120a、120b安装在重布线结构140'上。根据本公开的一些实施例，倒装芯片结合包括焊料结合，在所述焊料结合中使用焊料材料125。在一些实施例中，通过焊料材料125将导电块122a及导电柱122b结合到重布线结构140'的最上重布线路层142'。在使焊料材料125回焊以将半导体装置120a、120b结合到重布线结构140'时，半导体装置120a、120b由于熔化的焊料材料125的拉力而自对准到其目标位置。
现参照图14，在重布线结构140'上设置散热组件110。在一些实施例中，散热组件110可相同于或至少相似于图8所示散热组件110或图11所示散热组件110'。也就是说，在本实施例中，散热组件110可由冲压金属片、具有凹陷部分的硅晶片或其他相似的方式制成。因此，散热组件110包括凹陷部分112及延伸部分114，凹陷部分112接纳并接触半导体装置120a、120b，延伸部分114朝重布线结构140'延伸。在一些实施例中，散热组件110与半导体装置120a、120b呈热转移关系，且可通过界面材料124与半导体装置120a、120b接触。即，可在散热组件110的凹陷部分112与半导体装置120a、120b的后表面之间施加界面材料124。另外，可在重布线结构140'与散热组件110的延伸部分114之间施加界面材料117以将散热组件110结合到重布线结构140'上。
在一些实施例中，界面材料124、117可包括热界面材料(TIM)或管芯贴合膜(DAF)等。在一些实施例中，界面材料124、117可包括导热材料且可为导热胶、油脂或导热粘合剂。界面材料124、117允许在半导体装置120a、120b与重布线结构140'之间进行热转移，并维持半导体装置120a、120b以及重布线结构140'的相对定位。在替代实施例中，界面材料124、117可包括填隙料或石墨填充环氧树脂(例如，高级热转移粘合剂(ATTA))。本公开不对界面材料124、117的形成或类型进行限制。在一些实施例中，界面材料124、117可为不同的。用于界面材料124的材料与用于界面材料117的材料可选自与上述候选材料相同的候选材料，但可彼此不同。
现参照图15，在重布线结构140'之上形成包封材料130，且包封材料130填充散热组件110的凹陷部分112并包封半导体装置120a、120b。在本实施例中，散热组件110是冲压金属片，其具有凹陷部分112以及朝重布线结构140'延伸的延伸部分114。通过这种配置，包封材料130也可对延伸部分114的上表面进行包封。在散热组件由具有凹陷部分的硅晶片所制成的其他实施例中，包封材料130可仅填充凹陷部分112以包封半导体装置120a、120b。
现参照图15及图16，可接着移除图15所示载体20。在一些实施例中，通过直接剥除载体20上的离型层21或者使其失去或减少粘性来将载体20从重布线结构140'分离。接着移除离型层21以及载体20。举例来说，可使离型层21曝光于UV光，以使得离型层21失去或减少粘性，且由此可从重布线结构140'将载体20及离型层21移除以露出重布线结构140'的下表面。
接着，可如图16所示在重布线结构140'的下表面上设置多个电连接件150。在一些实施例中，在移除载体20之后，可接着将图15所示的所得结构(不包括载体20)翻转并将此所得结构贴合到用于安装重布线结构140'上的电连接件150的另一个载体。在一些实施例中，重布线结构140'还可包括用于进一步的电连接的凸块下金属(UBM)层。电连接件150可安装在凸块下金属层上或者直接设置在重布线结构140的最近的重布线路层上。在一些实施例中，在重布线结构140'的下表面上还可安装有至少一个集成无源装置(未示出)。电连接件150可包括焊料球、焊料材料、导电柱或具有焊料盖体的导电柱等。集成无源装置可使用标准晶片制作技术(例如薄膜及光刻处理)来制作，且可通过例如倒装芯片结合或导线结合等安装在重布线结构140'上。
有鉴于上述，本公开提供半导体封装件及其制造方法，其中散热组件包括凹陷部分及延伸部分，凹陷部分接纳并接触至少一个半导体装置，延伸部分接触重布线结构，且包封材料包封半导体装置及散热组件。通过这种配置，由半导体装置产生的热量可通过散热组件的凹陷部分散发。此外，所述热量还可通过由重布线结构及散热组件的延伸部分所形成的导热路径散发。即，散热组件可接触热源(例如，半导体装置及重布线结构)，且包封材料在不具有任何界面材料的条件下接触散热组件，以使得界面之间的热阻大幅减少，且来自热源的热量可更高效地散发。
另外，包封材料填充散热组件的凹陷部分并包封半导体装置，因此在半导体封装件中不会困留有空气(空气的导热性约为零)而降低散热效率。因此，本公开提高了半导体封装件的热性能及散热效率，且还减少了界面之间的热阻。
基于以上论述，可看出本公开提供了各种优点。然而，应理解，本文中未必论述所有优点，且其他实施例可提供不同优点，并且对于所有实施例来说并不需要特定优点。
根据本公开的一些实施例，一种半导体封装件包括重布线结构、至少一个半导体装置、散热组件及包封材料。所述至少一个半导体装置设置在所述重布线结构上且电连接到所述重布线结构。所述散热组件设置在所述重布线结构上且包括凹陷部分及延伸部分，所述凹陷部分接纳所述至少一个半导体装置，所述延伸部分连接到所述凹陷部分且接触所述重布线结构，其中所述凹陷部分连接所述至少一个半导体装置。所述包封材料设置在所述重布线结构之上，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置。
根据本公开的一些实施例，所述至少一个半导体装置包括有源表面及与所述有源表面相对的后表面，所述有源表面具有多个电接触件，所述有源表面面对所述重布线结构且所述凹陷部分接触所述至少一个半导体装置的所述后表面。
根据本公开的一些实施例，所述至少一个半导体装置包括设置在所述重布线结构上的第一半导体装置及堆叠在所述第一半导体装置上的至少一个第二半导体装置，且所述凹陷部分接触所述至少一个第二半导体装置。
根据本公开的一些实施例，所述第一半导体装置的有源表面及所述至少一个第二半导体装置的有源表面面对所述重布线结构，且所述第二半导体装置通过多个导电柱连接到所述重布线结构。
根据本公开的一些实施例，所述至少一个第二半导体装置包括以并排方式堆叠在所述第一半导体装置上的多个第二半导体装置。
根据本公开的一些实施例，所述散热组件还包括穿透所述散热组件的多个切口，且所述包封材料包封所述散热组件并通过所述多个切口填充所述凹陷部分。
根据本公开的一些实施例，所述散热组件的材料包括铜、硅或氧化铝。
根据本公开的一些实施例，所述延伸部分直接接触所述重布线结构。
根据本公开的一些实施例，所述延伸部分直接接触所述重布线结构的最上重布线路层。
根据本公开的一些实施例，一种半导体封装件的制造方法包括以下步骤。在载体上提供散热组件，其中所述散热组件包括凹陷部分。在所述凹陷部分中设置至少一个半导体装置。在所述载体上形成包封材料，其中所述包封材料填充所述凹陷部分并包封所述至少一个半导体装置。在所述包封材料及所述散热组件之上形成重布线结构，其中所述重布线结构接触所述散热组件且电连接到所述至少一个半导体装置。移除所述载体。
根据本公开的一些实施例，在所述凹陷部分中设置所述至少一个半导体装置包括：在所述凹陷部分与所述至少一个半导体装置的后表面之间提供界面材料。
根据本公开的一些实施例，所述至少一个半导体装置包括第一半导体装置及至少一个第二半导体装置，且在所述凹陷部分中设置所述至少一个半导体装置包括：在所述凹陷部分中设置所述至少一个第二半导体装置，其中所述至少一个第二半导体装置包括背对所述载体的有源表面及设置在所述有源表面上的多个导电柱；以及将所述第一半导体装置堆叠在所述至少一个第二半导体装置上。
根据本公开的一些实施例，所述至少一个第二半导体装置包括以并排方式排列的多个第二半导体装置。
根据本公开的一些实施例，将所述第一半导体装置堆叠在所述至少一个第二半导体装置上包括：在所述至少一个第二半导体装置与所述第一半导体装置的后表面之间提供界面材料。
根据本公开的一些实施例，提供所述散热组件的方法还包括：在硅晶片中形成所述凹陷部分。
根据本公开的一些实施例，一种半导体封装件的制造方法包括以下步骤。在载体上形成重布线结构。在所述重布线结构上安装至少一个半导体装置。在所述重布线结构上设置散热组件，其中所述散热组件包括用于接纳及连接所述至少一个半导体装置的凹陷部分。在所述重布线结构之上形成包封材料，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置。移除所述载体。
根据本公开的一些实施例，在所述重布线结构上设置所述散热组件包括：在所述重布线结构与所述散热组件之间提供第一界面材料以及在所述凹陷部分与所述至少一个半导体装置的后表面之间提供第二界面材料。
根据本公开的一些实施例，所述至少一个半导体装置包括第一半导体装置及至少一个第二半导体装置。
根据本公开的一些实施例，在所述重布线结构上安装所述至少一个半导体装置包括：经由多个导电凸块在所述重布线结构上安装所述第一半导体装置；以及将所述至少一个第二半导体装置堆叠在所述第一半导体装置上，其中所述至少一个第二半导体装置包括有源表面及多个导电柱，所述有源表面面对所述重布线结构，所述多个导电柱设置在所述有源表面上且被配置成安装在所述重布线结构上。
根据本公开的一些实施例，所述至少一个第二半导体装置包括以并排方式排列的多个第二半导体装置。
以上概述了若干实施例的特征，以使所属领域中的技术人员可更好地理解本公开的各个方面。所属领域中的技术人员应理解，其可容易地使用本公开作为设计或修改其他工艺及结构的基础来施行与本文中所介绍的实施例相同的目的和/或实现与本文中所介绍的实施例相同的优点。所属领域中的技术人员还应认识到，这些等效构造并不背离本公开的精神及范围，而且他们可在不背离本公开的精神及范围的条件下对其作出各种改变、代替及变更。

Claims (20)

1.一种半导体封装件，其特征在于，包括：
重布线结构；
至少一个半导体装置，设置在所述重布线结构上并包括多个电接触件，所述多个电接触件面对所述重布线结构且电连接到所述重布线结构；
散热组件，设置在所述重布线结构上且包括凹陷部分及延伸部分，所述凹陷部分接纳所述至少一个半导体装置，所述延伸部分连接到所述凹陷部分且接触所述重布线结构，其中所述凹陷部分接触所述至少一个半导体装置的表面；以及
包封材料，设置在所述重布线结构之上，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置。
2.根据权利要求1所述的半导体封装件，所述至少一个半导体装置包括有源表面及与所述有源表面相对的后表面，所述有源表面具有所述多个电接触件，所述有源表面面对所述重布线结构且所述凹陷部分接触所述至少一个半导体装置的所述后表面。
3.根据权利要求1所述的半导体封装件，所述至少一个半导体装置包括设置在所述重布线结构上的第一半导体装置及堆叠在所述第一半导体装置上的至少一个第二半导体装置，且所述凹陷部分接触所述至少一个第二半导体装置。
4.根据权利要求3所述的半导体封装件，所述第一半导体装置的有源表面及所述至少一个第二半导体装置的有源表面面对所述重布线结构，且所述第二半导体装置通过多个导电柱连接到所述重布线结构。
5.根据权利要求3所述的半导体封装件，所述至少一个第二半导体装置包括以并排方式堆叠在所述第一半导体装置上的多个第二半导体装置。
6.根据权利要求1所述的半导体封装件，所述散热组件还包括穿透所述散热组件的多个切口，且所述包封材料包封所述散热组件并通过所述多个切口填充所述凹陷部分。
7.根据权利要求1所述的半导体封装件，所述散热组件的材料包括铜、硅或氧化铝。
8.根据权利要求1所述的半导体封装件，所述延伸部分直接接触所述重布线结构。
9.根据权利要求1所述的半导体封装件，所述延伸部分直接接触所述重布线结构的最上重布线路层。
10.一种半导体封装件的制造方法，其特征在于，包括：
在载体上提供散热组件，其中所述散热组件包括凹陷部分；
在所述凹陷部分中设置至少一个半导体装置；
在所述载体上形成包封材料，其中所述包封材料填充所述凹陷部分并包封所述至少一个半导体装置；
在所述包封材料及所述散热组件之上形成重布线结构，其中所述重布线结构接触所述散热组件且电连接到所述至少一个半导体装置；以及
移除所述载体。
11.根据权利要求10所述的制造方法，在所述凹陷部分中设置所述至少一个半导体装置包括：
在所述凹陷部分与所述至少一个半导体装置的后表面之间提供界面材料。
12.根据权利要求10所述的制造方法，所述至少一个半导体装置包括第一半导体装置及至少一个第二半导体装置，且在所述凹陷部分中设置所述至少一个半导体装置包括：
在所述凹陷部分中设置所述至少一个第二半导体装置，其中所述至少一个第二半导体装置包括背对所述载体的有源表面及设置在所述有源表面上的多个导电柱；以及
将所述第一半导体装置堆叠在所述至少一个第二半导体装置上。
13.根据权利要求12所述的制造方法，所述至少一个第二半导体装置包括以并排方式排列的多个第二半导体装置。
14.根据权利要求12所述的制造方法，将所述第一半导体装置堆叠在所述至少一个第二半导体装置上包括：
在所述至少一个第二半导体装置与所述第一半导体装置的后表面之间提供界面材料。
15.根据权利要求10所述的制造方法，提供所述散热组件的方法还包括：
在硅晶片中形成所述凹陷部分。
16.一种半导体封装件的制造方法，其特征在于，包括：
在载体上形成重布线结构；
在所述重布线结构上安装至少一个半导体装置；
在所述重布线结构上设置散热组件，其中所述散热组件包括用于接纳及连接所述至少一个半导体装置的凹陷部分；
在所述重布线结构之上形成包封材料，其中所述包封材料填充所述凹陷部分且包封所述至少一个半导体装置；以及
移除所述载体。
17.根据权利要求16所述的制造方法，在所述重布线结构上设置所述散热组件包括：
在所述重布线结构与所述散热组件之间提供第一界面材料以及在所述凹陷部分与所述至少一个半导体装置的后表面之间提供第二界面材料。
18.根据权利要求16所述的制造方法，所述至少一个半导体装置包括第一半导体装置及至少一个第二半导体装置。
19.根据权利要求18所述的制造方法，在所述重布线结构上安装所述至少一个半导体装置包括：
经由多个导电凸块在所述重布线结构上安装所述第一半导体装置；以及
将所述至少一个第二半导体装置堆叠在所述第一半导体装置上，其中所述至少一个第二半导体装置包括有源表面及多个导电柱，所述有源表面面对所述重布线结构，所述多个导电柱设置在所述有源表面上且被配置成安装在所述重布线结构上。
20.根据权利要求19所述的制造方法，所述至少一个第二半导体装置包括以并排方式排列的多个第二半导体装置。
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