CN111181504A - E-type switch type stacked power amplifier - Google Patents
E-type switch type stacked power amplifier Download PDFInfo
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- CN111181504A CN111181504A CN201911348605.9A CN201911348605A CN111181504A CN 111181504 A CN111181504 A CN 111181504A CN 201911348605 A CN201911348605 A CN 201911348605A CN 111181504 A CN111181504 A CN 111181504A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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Abstract
The invention discloses an E-type switch type stacked power amplifier, which comprises an input differential power supply matching network, a first three-stacked self-biased switch amplifying tube, a second three-stacked self-biased switch amplifying tube and an E-type switch type output power supply matching network.
Description
Technical Field
The invention relates to the field of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to an E-type switch type stacked power amplifier applied to a transmitting module at the tail end of a radio frequency microwave transceiver.
Background
With the development of modern military and civil communication technologies, the rf front-end transmitter is also developed in the direction of high efficiency, high gain and high power output. Therefore, the market is urgent to demand a high-efficiency, high-gain, high-power amplifier. However, in the design of the conventional high-efficiency power amplifier, there are design difficulties, which are mainly reflected in that the high-efficiency indexes are mutually restricted: in order to ensure the high efficiency operation of the amplifier, the transistor should operate in the overdrive mode, similar to the switching state, but the bandwidth of the overdrive switching power amplifier is always the technical bottleneck of the circuit implementation.
The circuit structures of the common high-efficiency power amplifiers are many, and most typical of the common high-efficiency power amplifiers are traditional class AB, class C, switch-type class D, class E, and class F power amplifiers, however, the broadband characteristics of the high-efficiency amplifiers still have some disadvantages, which are mainly reflected in: the theoretical limit efficiency of the traditional AB class amplifier is 78.5 percent, and is relatively low, so that the bandwidth of the amplifier is increased by sacrificing the output insertion loss and efficiency; the limiting efficiency of the class C amplifier is 100%, but the power output capability is low, and the broadband output capability and efficiency are low; switching type class D, class E, class F power amplifiers, etc. require reliance on precise harmonic impedance control, or strict impedance matching conditions, which greatly limit the operational bandwidth of the amplifier. In addition, the existing high-efficiency fet power amplifier is often implemented based on a single common-source transistor, and is limited by the single transistor, and both the power output capability and the power gain capability are relatively low.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an E-type switch type stacked power amplifier, which combines the advantages of a stacked self-biased switch amplification technology, a differential amplifier technology and an E-type switch type matching technology, and has the advantages of high power, high gain, high efficiency, low cost and the like in a microwave frequency band.
The technical scheme for solving the technical problems is as follows: a kind of E type switch type stacks the power amplifier, including inputting the matching network of difference power supply, the first three stacks the amplifying tube of the self-biased switch, the second three stacks the amplifying tube of the self-biased switch, E type switch type outputs the matching network of power supply;
the input end of the input differential power supply matching network is the input end of the whole power amplifier, the first output end of the input differential power supply matching network is connected with the input end of the first three-stack self-biased switch amplifying tube, and the second output end of the input differential power supply matching network is connected with the input end of the second three-stack self-biased switch amplifying tube;
a first output end of the first third stacked self-biased switch amplifier tube is connected with a first input end of the E-type switch output power supply matching network, a second output end of the first third stacked self-biased switch amplifier tube is connected with a second input end of the E-type switch output power supply matching network, and a third output end of the first third stacked self-biased switch amplifier tube is connected with a third input end of the E-type switch output power supply matching network; a first output end of the second third stacked self-biased switch amplifier tube is connected with a fourth input end of the E-type switch output power supply matching network, a second output end of the second third stacked self-biased switch amplifier tube is connected with a fifth input end of the E-type switch output power supply matching network, and a third output end of the second third stacked self-biased switch amplifier tube is connected with a sixth input end of the E-type switch output power supply matching network;
and the output end of the E-type switch type output power supply matching network is the output end of the whole power amplifier.
The invention has the beneficial effects that: the differential structure can obviously inhibit high-frequency parasitic parameters and improve the high-frequency index of the amplifier, the self-biased switch amplifier tube can improve the output power capability of the power amplifier, and meanwhile, the waveform shaping effect similar to that of the E-type power amplifier can be formed at the output end of the three-stack structure by combining the E-type switch output power supply matching network, so that the alternating current coincident component of voltage and current is reduced, and the efficiency index of the power amplifier is improved.
Furthermore, the input end of the input differential power supply matching network is connected with a coupling transformer T1Primary coil of (2), coupling transformer T1The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T is coupled1The middle taps of the first and second secondary coils are connected with an inductor LdInductance LdIs connected with a bias voltage V at the other endgAnd a ground capacitor CinTransformer T1The same name end of the first secondary coil is connected with the input end of the first three-stack self-biased switch amplifying tube and the transformer T1The non-homonymous end of the second secondary coil is connected with the input end of the second third stacked self-biased switch amplifier tube.
The beneficial effects of the further scheme are as follows: the input differential power supply matching network adopted by the invention can realize the power distribution of the input radio frequency signal, can also carry out impedance matching and phase adjustment on the radio frequency input signal, and simultaneously realizes the conversion from a single-ended signal to a differential signal, thereby ensuring the phase difference of the differential signal. Meanwhile, two power supply circuits of the differential signals are integrated into one power supply circuit, so that a power supply network is simplified.
Furthermore, the input ends of the first three-stack self-biased switch amplifying tube and the second three-stack self-biased switch amplifying tube are connected with a resistor RmjResistance RmjAnother end of the inductor L is connected with the inductor LojAnd a resistance RpjEnd a of (1), inductor LojThe other end of the capacitor is connected with a grounding capacitor CmjAnd an inductance LrjInductance LrjThe other end of the first electrode is connected with a field effect tube MrjGrid electrode of (1), field effect transistor MrjSource electrode of (1) grounded, field effect transistor MrjDrain electrode of the transistor M is connected with a field effect transistor MtjWherein the field effect transistor Mt1The source electrode of the first three-stack self-biased switch amplifier is also connected with a first output end of a first three-stack self-biased switch amplifier tube, and a field effect tube Mt2The source electrode of the second self-biased switch amplifier tube is also connected with the first output end of the second third stacked self-biased switch amplifier tube; resistance RpjEnd b of the resistor RtjAnd a resistance RqjEnd a of (1), resistor RtjThe other end of the capacitor is connected with a grounding capacitor CpjAnd a resistance RcjResistance RcjThe other end of the first electrode is connected with a field effect tube MtjGrid electrode of (1), field effect transistor MtjDrain electrode of the transistor M is connected with a field effect transistor MsjWherein the field effect transistor Ms1The source electrode of the first three-stack self-biased switch amplifier is also connected with a second output end of the first three-stack self-biased switch amplifier and a field effect transistor Ms2The source electrode of the first self-biased switch amplifier tube is also connected with a first output end of a first third stacked self-biased switch amplifier tube; resistance RqjEnd b of the resistor RsjAnd a resistor RgjEnd a of (1), resistor RsjThe other end of the capacitor is connected with a grounding capacitor CqjAnd a resistance RwjResistance RwjThe other end of the first electrode is connected with a field effect tube MsjGrid electrode of (1), field effect transistor MsjDrain electrode of (1) is connected with an inductor Ls1Wherein the field effect transistor Ms1The drain electrode of the first three-stack self-biased switch amplifier is also connected with a third output end of the first three-stack self-biased switch amplifier and a field effect transistor Ms2The drain of the second self-biased switch amplifier tube is also connected with a third output end of the second third stacked self-biased switch amplifier tube; resistance RgjTerminal b of (1) is connected with a bias voltage Vd1And a grounding capacitor Cg1And an inductance Ls1Inductance Ls1The other end of the first electrode is connected with a field effect tube MsjWherein j is 1, 2.
The beneficial effects of the further scheme are as follows: the first three-stack self-biased switch amplifier tube and the second three-stack self-biased switch amplifier tube can obviously improve the gain and power capacity of the amplifier, and meanwhile, compared with a multipath synthesis structure, the circuit structure is simpler. The bias circuit adopts a self-bias structure, and a peripheral power supply circuit is simplified.
Furthermore, the first, second and third input ends of the E-type switch output power supply matching network are respectively connected with a capacitor Cd5、Cd3、Cd1Capacitor Cd5、Cd3、Cd1While the other end is connected with a transformer T2Non-dotted terminal of secondary coil and capacitor C5The fourth, fifth and sixth input ends of the E-type switch type output power supply matching network are respectively connected with a capacitor Cd6、Cd4、Cd2Capacitor Cd6、Cd4、Cd2While the other end is connected with a transformer T2C and a capacitor C5Terminal b of, transformer T2Is grounded, and a transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with a grounding capacitor CoutAnd an inductance LcInductance LcThe other end is the output end of the E-type switch output power supply matching network.
The beneficial effects of the further scheme are as follows: the E-type switch type output power supply matching network adopted by the invention utilizes the principle of an E-type power amplifier to ensure that the overlapping of the voltage and the current of the transistor is zero at the moment of switching on and off the transistor, thereby obviously improving the working efficiency of the amplifier. In addition, the power synthesis of two paths of differential radio frequency signals can be realized, the two paths of differential signals can be converted into single-ended signals, the introduced insertion loss is small, and the output power of the amplifier is guaranteed.
Drawings
FIG. 1 is a schematic block diagram of a power amplifier of the present invention;
fig. 2 is a circuit diagram of a power amplifier according to the present invention.
Detailed Description
Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments shown and described in the drawings are merely exemplary and are intended to illustrate the principles and spirit of the invention, not to limit the scope of the invention.
The embodiment of the invention provides an E-type switch type stacked power amplifier which comprises an input differential power supply matching network, a first three-stacked self-biased switch amplifying tube, a second three-stacked self-biased switch amplifying tube and an E-type switch type output power supply matching network.
As shown in fig. 1, an input end of the input differential power supply matching network is an input end of the entire power amplifier, a first output end of the input differential power supply matching network is connected with an input end of the first three-stacked self-biased switch amplifying tube, and a second output end of the input differential power supply matching network is connected with an input end of the second three-stacked self-biased switch amplifying tube;
a first output end of the first third stacked self-biased switch amplifier tube is connected with a first input end of the E-type switch output power supply matching network, a second output end of the first third stacked self-biased switch amplifier tube is connected with a second input end of the E-type switch output power supply matching network, and a third output end of the first third stacked self-biased switch amplifier tube is connected with a third input end of the E-type switch output power supply matching network; a first output end of the second third stacked self-biased switch amplifier tube is connected with a fourth input end of the E-type switch output power supply matching network, a second output end of the second third stacked self-biased switch amplifier tube is connected with a fifth input end of the E-type switch output power supply matching network, and a third output end of the second third stacked self-biased switch amplifier tube is connected with a sixth input end of the E-type switch output power supply matching network;
and the output end of the E-type switch type output power supply matching network is the output end of the whole power amplifier.
As shown in fig. 2, the input end of the input differential power supply matching network is connected with a coupling transformer T1Dotted terminal of primary winding, transformer T1Transformer T with primary coil grounded at its non-dotted terminal1The middle taps of the first and second secondary coils are connected with an inductor LdInductance LdIs connected with a bias voltage V at the other endgAnd a ground capacitor CinTransformer T1The same name end of the first secondary coil is connected with the input end of the first three-stack self-biased switch amplifying tube and the transformer T1The non-homonymous end of the second secondary coil is connected with the input end of the second third stacked self-biased switch amplifier tube.
Furthermore, the input ends of the first three-stack self-biased switch amplifying tube and the second three-stack self-biased switch amplifying tube are connected with a resistor RmjResistance RmjAnother end of the inductor L is connected with the inductor LojAnd a resistance RpjEnd a of (1), inductor LojThe other end of the capacitor is connected with a grounding capacitor CmjAnd an inductance LrjInductance LrjThe other end of the first electrode is connected with a field effect tube MrjGrid electrode of (1), field effect transistor MrjSource electrode of (1) grounded, field effect transistor MrjDrain electrode of the transistor M is connected with a field effect transistor MtjWherein the field effect transistor Mt1The source electrode of the first three-stack self-biased switch amplifier is also connected with a first output end of a first three-stack self-biased switch amplifier tube, and a field effect tube Mt2The source electrode of the second self-biased switch amplifier tube is also connected with the first output end of the second third stacked self-biased switch amplifier tube; resistance RpjEnd b of the resistor RtjAnd a resistance RqjEnd a of (1), resistor RtjThe other end of the capacitor is connected with a grounding capacitor CpjAnd a resistance RcjResistance RcjThe other end of the first electrode is connected with a field effect tube MtjGrid electrode of (1), field effect transistor MtjDrain electrode of the transistor M is connected with a field effect transistor MsjWherein the field effect transistor Ms1The source electrode of the first three-stack self-biased switch amplifier is also connected with a second output end of the first three-stack self-biased switch amplifier and a field effect transistor Ms2The source electrode of the first self-biased switch amplifier tube is also connected with a first output end of a first third stacked self-biased switch amplifier tube; resistance RqjEnd b of the resistor RsjAnd a resistor RgjEnd a of (1), resistor RsjThe other end of the capacitor is connected with a grounding capacitor CqjAnd a resistance RwjResistance RwjThe other end of the first electrode is connected with a field effect tube MsjGrid electrode of (1), field effect transistor MsjDrain electrode of (1) is connected with an inductor Ls1Wherein the field effect transistor Ms1The drain electrode of the first three-stack self-biased switch amplifier is also connected with a third output end of the first three-stack self-biased switch amplifier and a field effect transistor Ms2The drain of the first self-biased switch amplifier is connected with the third of the second three-stacked self-biased switch amplifier tubeAn output end; resistance RgjTerminal b of (1) is connected with a bias voltage Vd1And a grounding capacitor Cg1And an inductance Ls1Inductance Ls1The other end of the first electrode is connected with a field effect tube MsjWherein j is 1, 2.
The first, second and third input ends of the E-type switch output power supply matching network are respectively connected with a capacitor Cd5、Cd3、Cd1Capacitor Cd5、Cd3、Cd1While the other end is connected with a transformer T2Non-dotted terminal of secondary coil and capacitor C5The fourth, fifth and sixth input ends of the E-type switch type output power supply matching network are respectively connected with a capacitor Cd6、Cd4、Cd2Capacitor Cd6、Cd4、Cd2While the other end is connected with a transformer T2C and a capacitor C5Terminal b of, transformer T2Is grounded, and a transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with a grounding capacitor CoutAnd an inductance LcInductance LcThe other end is the output end of the E-type switch output power supply matching network.
The specific working principle and process of the present invention are described below with reference to fig. 2:
radio frequency input signal through input terminal RFinThe input four-way voltage transformation coupling power synthesis network carries out impedance transformation matching, the input four-way voltage transformation coupling power synthesis network simultaneously enters the input ends of the first to fourth field effect transistor Darlington three-stack power amplification networks in the form of differential signals, the power amplification is carried out through the amplification networks, the output ends of the first to fourth field effect transistor Darlington three-stack power amplification networks simultaneously in the form of differential signals are output, the four-way signals are synthesized into a single-ended signal through the output end RFoutAnd (6) outputting.
Based on the circuit analysis, the difference between the structure of the class-E switch type stacked power amplifier provided by the invention and the structure of the prior power amplifier based on the semiconductor process is as follows:
1. the core architecture of the high-efficiency amplifier adopts a differential three-stack self-biased amplification network.
The traditional high-efficiency switching power amplifier usually adopts a single transistor and is limited by the single transistor, and the power output capability and the power gain capability are relatively low; and the three-stack amplifying network can help the existing high-efficiency switching power amplifier to improve the power capacity and the power gain. In addition, the self-biasing structure is added into the three-stack self-biasing amplification network, and meanwhile, additional stack grid biasing voltage is not needed, so that the peripheral grid power supply structure of the stack structure is greatly simplified. Meanwhile, a differential amplification structure is adopted, so that the phenomenon that the conventional stacked amplifier deteriorates along with parasitic parameters at high frequency can be obviously improved.
2. The output matching network of the high-efficiency amplifier adopts a three-path class-E matching architecture:
in the prior design method, the E-type control circuit is synthesized after respectively shaping three drain output waveforms of three stacked transistors. Therefore, the circuit structure of the existing stacked E-type matching can be obviously improved, the waveform overlapping condition between the stacked stages is improved, and the efficiency of the stacked amplifier is improved.
In the whole E-type switch type stacked power amplifier, the size of a transistor and the sizes of other resistors and capacitors are determined after the gain, bandwidth, output power and other indexes of the whole circuit are comprehensively considered, and through later-stage layout design and reasonable layout, the required indexes can be better realized, and the high-power output capacity, high-power gain and good input-output matching characteristic are realized.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (4)
1. A kind of E-type switch type stacks the power amplifier, characterized by, including inputting the matching network of difference power supply, the first three stacks the amplifier tube of the self-biased switch, the second three stacks the amplifier tube of the self-biased switch, E-type switch type outputs the matching network of power supply;
the input end of the input differential power supply matching network is the input end of the whole power amplifier, the first output end of the input differential power supply matching network is connected with the input end of the first three-stack self-biased switch amplifying tube, and the second output end of the input differential power supply matching network is connected with the input end of the second three-stack self-biased switch amplifying tube;
a first output end of the first third stacked self-biased switch amplifier tube is connected with a first input end of the E-type switch output power supply matching network, a second output end of the first third stacked self-biased switch amplifier tube is connected with a second input end of the E-type switch output power supply matching network, and a third output end of the first third stacked self-biased switch amplifier tube is connected with a third input end of the E-type switch output power supply matching network; a first output end of the second third stacked self-biased switch amplifier tube is connected with a fourth input end of the E-type switch output power supply matching network, a second output end of the second third stacked self-biased switch amplifier tube is connected with a fifth input end of the E-type switch output power supply matching network, and a third output end of the second third stacked self-biased switch amplifier tube is connected with a sixth input end of the E-type switch output power supply matching network;
and the output end of the E-type switch type output power supply matching network is the output end of the whole power amplifier.
2. The stacked power amplifier of claim 1, wherein the input end of the input differential supply matching network is connected to a coupling transformer T1Primary coil of (2), transformer (T)1The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T1Secondary winding center tap connection inductance LdInductance LdIs connected with a bias voltage V at the other endgAnd a ground capacitor CinTransformer T1The same name end of the secondary coil is connected with the input end of the first three-stack self-biased switch amplifying tube and the transformer T1The non-homonymous end of the secondary coil of the transformer is connected with the input end of the second third stacked self-biased switch amplifier tube.
3. A class E switch according to claim 1The stacked power amplifier is characterized in that the input ends of the first three-stacked self-biased switch amplifying tube and the second three-stacked self-biased switch amplifying tube are connected with a resistor RmjResistance RmjAnother end of the inductor L is connected with the inductor LojAnd a resistance RpjEnd a of (1), inductor LojThe other end of the capacitor is connected with a grounding capacitor CmjAnd an inductance LrjInductance LrjThe other end of the first electrode is connected with a field effect tube MrjGrid electrode of (1), field effect transistor MrjSource electrode of (1) grounded, field effect transistor MrjDrain electrode of the transistor M is connected with a field effect transistor MtjWherein the field effect transistor Mt1The source electrode of the first three-stack self-biased switch amplifier tube is also connected with a first output end of the first three-stack self-biased switch amplifier tube, and a field effect tube Mt2The source of the second self-biased switch amplifier tube is also connected with the first output end of the second self-biased switch amplifier tube; resistance RpjEnd b of the resistor RtjAnd a resistance RqjEnd a of (1), resistor RtjThe other end of the capacitor is connected with a grounding capacitor CpjAnd a resistance RcjResistance RcjThe other end of the first electrode is connected with a field effect tube MtjGrid electrode of (1), field effect transistor MtjDrain electrode of the transistor M is connected with a field effect transistor MsjWherein the field effect transistor Ms1The source electrode of the first three-stack self-biased switch amplifier tube is also connected with a second output end of the first three-stack self-biased switch amplifier tube, and a field effect tube Ms2The source of the second self-biased switch amplifier tube is also connected with a second output end of the second third stacked self-biased switch amplifier tube; resistance RqjEnd b of the resistor RsjAnd a resistor RgjEnd a of (1), resistor RsjThe other end of the capacitor is connected with a grounding capacitor CqjAnd a resistance RwjResistance RwjThe other end of the first electrode is connected with a field effect tube MsjGrid electrode of (1), field effect transistor MsjDrain electrode of (1) is connected with an inductor Ls1Wherein the field effect transistor Ms1The drain electrode of the first three-stack self-biased switch amplifier tube is also connected with a third output end of the first three-stack self-biased switch amplifier tube, and a field effect tube Ms2The drain of the second self-biased switch amplifier tube is also connected with a third output end of the second third stacked self-biased switch amplifier tube; resistance RgjTerminal b of (1) is connected with a bias voltage Vd1And a grounding capacitor Cg1And an inductance Ls1Inductance Ls1The other end of the first electrode is connected with a field effect tube MsjOfAnd (d) polar, wherein j is 1 or 2.
4. The stacked power amplifier of claim 1, wherein the first, second and third input terminals of the output power matching network of class E switch type are respectively connected to a capacitor Cd5、Cd3And Cd1Capacitor Cd5、Cd3And Cd1While the other end is connected with a transformer T2Non-dotted terminal of secondary coil and capacitor C5The fourth input end, the fifth input end and the sixth input end of the E-type switch type output power supply matching network are respectively connected with a capacitor Cd6、Cd4And Cd2Capacitor Cd6、Cd4And Cd2While the other end is connected with a transformer T2C and a capacitor C5Terminal b of, transformer T2Is grounded, and a transformer T2The non-dotted terminal of the primary coil of (A) is grounded, and a transformer T2The dotted terminal of the primary coil is connected with a grounding capacitor CoutAnd an inductance LcInductance LcThe other end is the output end of the E-type switch output power supply matching network.
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| CN201911348605.9A CN111181504A (en) | 2019-12-24 | 2019-12-24 | E-type switch type stacked power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114362685A (en) * | 2021-12-14 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114362685A (en) * | 2021-12-14 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
| CN114362685B (en) * | 2021-12-14 | 2022-09-20 | 成都嘉纳海威科技有限责任公司 | Power amplifier based on high Q value differential coupling technology |
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