CN111180565B - Flip LED chip - Google Patents
Flip LED chip Download PDFInfo
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- CN111180565B CN111180565B CN202010110828.8A CN202010110828A CN111180565B CN 111180565 B CN111180565 B CN 111180565B CN 202010110828 A CN202010110828 A CN 202010110828A CN 111180565 B CN111180565 B CN 111180565B
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- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000010410 layer Substances 0.000 claims description 312
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 239000012811 non-conductive material Substances 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 description 12
- 230000006872 improvement Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a flip LED chip, which comprises a substrate, an epitaxial layer, a transparent conducting layer, a filling layer, an adhesion layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conducting layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conducting layer and fills up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and is filled into the first holes to form conductive connection with the transparent conducting layer, and the reflecting layer is arranged on the adhesion layer. According to the invention, the filling layer is formed on the transparent conductive layer of the flip LED chip, the concave-convex structure of the epitaxial layer is filled to form a flat surface, and the reflecting layer arranged on the filling layer forms total specular reflection, so that light emitted by the epitaxial layer can be concentrated to exit from the back surface of the substrate after being reflected by the reflecting layer, and the light-emitting efficiency of the chip is further improved.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip.
Background
Referring to fig. 1, the conventional flip-chip LED chip includes a substrate 10, an epitaxial layer 20 provided on the front surface of the substrate 10, an ITO layer 30 provided on the epitaxial layer 20, a reflective layer 40 provided on the ITO layer 30, an insulating layer 50 provided on the reflective layer 40, and an electrode 60. In the conventional flip chip, light emitted from the epitaxial layer 20 on the side facing away from the substrate 10 is reflected by the reflective layer 40 and then emitted from the back side of the substrate 10. The surface of the general epitaxial layer structure is uneven in the process of crystal growth, so that the reflecting layer 40 plated on the rear surface cannot form a complete mirror surface, further, the chip generates dispersion, light is not concentrated, and the light efficiency is poor after the chip is packaged into white light.
Disclosure of Invention
The invention aims to solve the technical problem of providing a flip LED chip, which improves the light emitting effect and the light emitting efficiency of the chip.
In order to solve the technical problems, the invention provides a flip LED chip, which comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer and fills up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and is filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesion layer and forms a total specular reflection structure, the filling layer is made of transparent non-conductive materials, and the adhesion layer is made of transparent conductive materials.
As an improvement of the scheme, the transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride and boron nitride.
As an improvement of the scheme, the transparent conductive material is one or more of ITO, ni/Au oxide, azO and ZnO.
As an improvement of the scheme, the thickness of the filling layer is 300-1000 nm;
the thickness of the adhesive layer is 10-100 nm.
As an improvement of the scheme, the diameter of the first holes is 3-5 mu m, and the distance between the first holes is 3-5 mu m.
As an improvement of the scheme, the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on the substrate, wherein the epitaxial layer is provided with a second hole, and the second hole is etched from the second semiconductor layer to the first semiconductor layer;
the electrode structure comprises a first electrode and a second electrode, the first electrode is arranged on the first semiconductor layer exposed out of the second hole, and the second electrode penetrates through the reflecting layer, the bonding layer and the filling layer and is in conductive connection with the transparent conductive layer.
As an improvement of the above scheme, the reflective layer is covered by a protective layer to protect the reflective layer;
the protective layer is made of titanium tungsten alloy.
As an improvement of the above solution, the device further comprises an insulating layer, wherein the insulating layer covers the protective layer, the first electrode and the second electrode to prevent side leakage;
the insulating layer is made of an insulating material.
As an improvement of the above scheme, the electrode structure further includes a first bonding pad and a second bonding pad, the first bonding pad and the second bonding pad are disposed on the insulating layer, the first bonding pad penetrates through the insulating layer to be electrically connected with the first electrode, and the second bonding pad penetrates through the insulating layer to be electrically connected with the second electrode.
As an improvement of the above, the reflective layer is made of silver, and the transparent conductive layer is an ITO layer.
The implementation of the invention has the following beneficial effects:
According to the invention, the filling layer is formed on the transparent conductive layer of the flip LED chip, the concave-convex structure of the epitaxial layer is filled to form a flat surface, and the reflecting layer arranged on the filling layer forms total specular reflection, so that light emitted by the epitaxial layer can be concentrated to exit from the back surface of the substrate after being reflected by the reflecting layer, and the light-emitting efficiency of the chip is further improved.
In addition, the adhesion layer is arranged on the filling layer, so that the reflection layer is adhered on the filling layer, the adhesion layer penetrates through the filling layer to form good conductive connection with the transparent conductive layer, a common conductive layer is formed, the current expansion performance of the flip LED chip is effectively improved, the influence of the filling layer is eliminated, and the voltage of the flip LED chip is reduced.
Drawings
Fig. 1 is a schematic diagram of a conventional flip-chip LED chip;
fig. 2 is a schematic diagram of the structure of a flip-chip LED chip of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 2, the flip-chip LED chip provided by the present invention includes a substrate 10, an epitaxial layer 20, a transparent conductive layer 30, a fill-up layer 40, an adhesive layer 50, a reflective layer 60, and an electrode structure.
The epitaxial layer 20 of the present invention includes a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 sequentially disposed on the front surface of the substrate 10, and the epitaxial layer 20 is provided with a second hole, and the second hole is etched from the second semiconductor layer to the first semiconductor layer.
The transparent conductive layer 30 is disposed on the second semiconductor layer. Preferably, the transparent conductive layer 30 is an ITO layer. In order to secure the current spreading performance of the transparent conductive layer 30, the thickness of the transparent conductive layer 30 on the second semiconductor layer is uniform, and thus the transparent conductive layer 30 cannot fill up the rugged structure on the epitaxial layer 20.
The electrode structure comprises a first electrode 71 and a second electrode 72, wherein the first electrode 71 is arranged on the first semiconductor layer with the second hole exposed, and the second electrode 72 is arranged on the transparent conductive layer 30.
The filling layer 40 is disposed on the transparent conductive layer 30 outside the electrolytic structure, and fills up the concave-convex structure of the epitaxial layer 20 to form a flat surface, so that the reflective layer 60 disposed on the filling layer 40 forms total specular reflection.
The depth of the relief structure of the epitaxial layer 20 is generally 200nm, and in order to ensure that the filling layer 40 can fill up the relief structure, the thickness of the filling layer 40 is preferably 300-1000 nm. More preferably, the thickness of the filling layer 40 is 400-600 nm.
Since the light emitted by the active layer needs to pass through the filling layer 40 and then be reflected by the reflective layer 60, if the thickness of the filling layer 40 is greater than 1000nm, the filling layer 40 absorbs light, and the light emitting efficiency of the chip is reduced.
In order not to affect the light emitting efficiency of the chip and to prevent a short circuit between the first electrode and the second electrode, the fill-in layer 40 of the present invention must be made of a transparent non-conductive material. Preferably, the transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride and boron nitride. The material has high light transmittance and can be well adhered to the transparent conductive layer 30 so as not to fall off.
It should be noted that, the reflective layer 60 of the present invention has a larger material difference from the transparent conductive layer 30, and the transparent non-conductive material of the filling layer 40 of the present invention can only adhere well to the transparent conductive layer 30, and the reflective layer 60 of the present invention cannot adhere directly to the filling layer 40.
In order to ensure that the reflective layer 60 is capable of adhering to the fill layer 40 to form a specular reflection, the adhesive layer 50 of the present invention is disposed between the fill layer 40 and the reflective layer 60 to adhere the reflective layer 60 to the fill layer 40.
In order to further improve the optoelectronic performance of the chip, the filling layer 40 is provided with a plurality of first holes, and the first holes penetrate through the filling layer 40. The adhesive layer 50 fills the first hole to form an electrically conductive connection with the transparent conductive layer 30. Specifically, the adhesion layer 50 and the transparent conductive layer 30 are combined to form a common conductive layer, so as to improve the current spreading capability of the chip and reduce the voltage of the chip.
The adhesive layer 50 is made of a transparent conductive material. Preferably, the transparent conductive material is one or more of ITO, ni/Au oxide, azO and ZnO. The material has high light transmittance, and can well connect the filling layer 40 and the reflecting layer 60 so as to prevent the reflecting layer 60 from falling off.
In order to ensure that the adhesive layer 50 can perform a good adhesion, the thickness of the adhesive layer 50 is preferably 10 to 100nm. Since the light emitted from the active layer needs to pass through the adhesive layer 50 and then be reflected by the reflective layer 60, if the thickness of the adhesive layer 50 is greater than 100nm, the adhesive layer 50 absorbs the light, and the light extraction efficiency of the chip is reduced.
If the flip-chip LED chip of the present invention does not have the adhesive layer 50, the reflective layer 60 cannot be formed on the fill-level layer 40.
In order to further increase the bonding force between the adhesive layer 50 and the transparent conductor and reduce the chip voltage, it is preferable that the diameter of the first holes is 3-5 μm and the pitch of the first holes is 3-5 μm. If the diameter of the first hole is larger than 5 μm, the contact area between the electrode structure and the conductive layer is too small, so that the voltage of the chip is increased.
It should be noted that, the diameter size and the interval size of the first hole need to cooperate with each other to effectively reduce the voltage of the chip. For example: the diameter of the first holes is 3 μm, and the chip voltage of the first holes with the spacing of 5 μm is higher than that of the first holes with the diameter of 5 μm, and the chip voltage of the first holes with the spacing of 3 μm.
In addition, the diameter of the first holes is 3 μm, the chip voltage of the first holes with the interval of 5 μm is lower than that of the first holes with the diameter of 5 μm, and the chip voltage of the first holes with the interval of 5 μm.
In order to improve the reflection efficiency of the reflection layer 60, the reflection layer 60 of the present invention is a metal reflection layer 60, and preferably, the reflection layer 60 is made of silver, but is not limited thereto.
In order to prevent migration of metal of the reflective layer 60, it is preferable that the reflective layer 60 is covered with a primary protective layer 80, and the protective layer 80 is made of titanium tungsten alloy, but is not limited thereto.
In order to prevent chip leakage, the flip-chip LED chip of the present invention further includes an insulating layer 90, the insulating layer 90 covering the protective layer 80, the first electrode 71, and the second electrode 72. Wherein the insulating layer 90 needs to be etched to expose the first electrode 71 and the second electrode 72.
Preferably, the insulating layer 90 is made of an insulating material.
The electrode structure further includes a first pad 73 and a second pad 74, the first pad 73 and the second pad 74 being disposed on the insulating layer 90, and the first pad 73 being electrically connected to the first electrode lead 71, and the second pad 74 being electrically connected to the second electrode 72. Preferably, the first pads 73 and the second pads 74 are equal in area.
The invention will be further illustrated by the following specific examples
Example 1
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill up epitaxial layer's concave-convex structure, filling layer is equipped with a plurality of first hole, the adhesion layer is located on filling layer and is filled to first hole in and form conductive connection with transparent conducting layer, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by silica, the adhesion layer is made by ITO, the reflection stratum is made by silver, filling layer's thickness is 300nm, the thickness of adhesion layer is 10nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 3 mu m, and the interval of first hole is 3 mu m.
Example 2
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill the concave-convex structure of epitaxial layer, filling layer is equipped with a plurality of first hole, adhesion layer locates on the filling layer and fills to form conductive connection with transparent conducting layer in the first hole, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by aluminium oxide, the adhesion layer is made by Ni/Au oxide, the reflection stratum is made by silver, filling layer's thickness is 500nm, adhesion layer's thickness is 30nm, reflection stratum's thickness is 50nm, the diameter of first hole is 4 mu m, and first hole's interval is 4 mu m.
Example 3
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill the concave-convex structure of epitaxial layer, filling layer is equipped with a plurality of first hole, the adhesion layer is located on the filling layer and is filled to first hole in and form conductive connection with transparent conducting layer, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by magnesium difluoride, the adhesion layer is made by AzO, the reflection stratum is made by silver, filling layer's thickness is 700nm, the thickness of adhesion layer is 60nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 4 mu m, and the interval of first hole is 4 mu m.
Example 4
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill up epitaxial layer's concave-convex structure, filling layer is equipped with a plurality of first hole, the adhesion layer is located on filling layer and is filled to first hole in and form conductive connection with transparent conducting layer, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by boron nitride, the adhesion layer is made by ZnO, the reflection stratum is made by silver, filling layer's thickness is 900nm, the thickness of adhesion layer is 90nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 5 mu m, and the interval of first hole is 5 mu m.
Example 5
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill up epitaxial layer's concave-convex structure, filling layer is equipped with a plurality of first hole, the adhesion layer is located on filling layer and is filled to first hole in and form conductive connection with transparent conducting layer, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by boron nitride, the adhesion layer is made by ZnO, the reflection stratum is made by silver, filling layer's thickness is 1200nm, the thickness of adhesion layer is 80nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 7 mu m, and the interval of first hole is 5 mu m.
Example 6
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, filling layer, adhesion layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, filling layer locates on the transparent conducting layer in order to fill up epitaxial layer's concave-convex structure, filling layer is equipped with a plurality of first hole, the adhesion layer is located on filling layer and is filled to first hole in and form conductive connection with transparent conducting layer, the reflection stratum locates form full specular reflection on the adhesion layer, filling layer is made by silica, the adhesion layer is made by ITO, the reflection stratum is made by silver, filling layer's thickness is 1500nm, the thickness of adhesion layer is 100nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 10 mu m, and the interval of first hole is 4 mu m.
Comparative example 1
The flip LED chip comprises a substrate, an epitaxial layer, a transparent conducting layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conducting layer is arranged on the epitaxial layer, the reflecting layer is arranged on the transparent conducting layer, the reflecting layer is made of silver, and the thickness of the reflecting layer is 50nm.
The flip-chip LED chips of examples 1 to 6 and comparative example 1 were subjected to photoelectric test, all of which had a size of 5555A4, and the results were as follows:
| Group of | Voltage (V) | Brightness (mw) | Wavelength (nm) |
| Comparative example 1 | 2.84 | 600 | 450 |
| Example 1 | 2.84 | 620 | 450 |
| Example 2 | 2.83 | 620 | 450 |
| Example 3 | 2.84 | 618 | 450 |
| Example 4 | 2.84 | 618 | 450 |
| Example 5 | 2.86 | 608 | 450 |
| Example 6 | 2.97 | 606 | 450 |
The above disclosure is only a preferred embodiment of the present invention, and it is needless to say that the scope of the invention is not limited thereto, and therefore, the equivalent changes according to the claims of the present invention still fall within the scope of the present invention.
Claims (6)
1. The flip LED chip is characterized by comprising a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer and fills up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and is filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesion layer and forms a total specular reflection structure, the filling layer is made of transparent non-conductive materials, and the adhesion layer is made of transparent conductive materials;
The transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride and boron nitride;
The transparent conductive material is one or more of ITO, ni/Au oxide, azO and ZnO;
The thickness of the filling layer is 300-1000 nm;
the thickness of the adhesion layer is 10-100 nm;
the diameter of the first holes is 3-5 mu m, and the distance between the first holes is 3-5 mu m.
2. The flip-chip LED chip of claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially disposed on a substrate, the epitaxial layer having a second hole etched from the second semiconductor layer to the first semiconductor layer;
the electrode structure comprises a first electrode and a second electrode, the first electrode is arranged on the first semiconductor layer exposed out of the second hole, and the second electrode penetrates through the reflecting layer, the bonding layer and the filling layer and is in conductive connection with the transparent conductive layer.
3. The flip-chip LED chip of claim 2, further comprising a protective layer overlying the reflective layer to protect the reflective layer;
the protective layer is made of titanium tungsten alloy.
4. The flip-chip LED chip of claim 3, further comprising an insulating layer covering the protective layer, the first electrode, and the second electrode to prevent lateral leakage;
the insulating layer is made of an insulating material.
5. The flip-chip LED chip of claim 4, wherein the electrode structure further comprises a first pad and a second pad, the first pad and the second pad being disposed on an insulating layer, the first pad filling through the insulating layer in conductive connection with the first electrode, the second pad filling through the insulating layer in conductive connection with the second electrode.
6. The flip-chip LED chip of claim 1, wherein the reflective layer is made of silver and the transparent conductive layer is an ITO layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010110828.8A CN111180565B (en) | 2020-02-24 | 2020-02-24 | Flip LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010110828.8A CN111180565B (en) | 2020-02-24 | 2020-02-24 | Flip LED chip |
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| CN111180565A CN111180565A (en) | 2020-05-19 |
| CN111180565B true CN111180565B (en) | 2024-05-31 |
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| CN202010110828.8A Active CN111180565B (en) | 2020-02-24 | 2020-02-24 | Flip LED chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114300402A (en) * | 2020-09-30 | 2022-04-08 | 广东晶相光电科技有限公司 | Light emitting diode and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134443A (en) * | 2005-11-09 | 2007-05-31 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting diode |
| KR20120039811A (en) * | 2010-10-18 | 2012-04-26 | 서울옵토디바이스주식회사 | High efficiency light emitting diode and method of fabricating the same |
| CN204011468U (en) * | 2014-06-16 | 2014-12-10 | 江苏汉莱科技有限公司 | A kind of LED flip-chip |
| CN107799638A (en) * | 2017-10-24 | 2018-03-13 | 厦门乾照光电股份有限公司 | A kind of flip LED and preparation method thereof |
| CN211320132U (en) * | 2020-02-24 | 2020-08-21 | 佛山市国星半导体技术有限公司 | Flip LED chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI361497B (en) * | 2007-08-20 | 2012-04-01 | Delta Electronics Inc | Light-emitting diode apparatus and manufacturing method thereof |
| CN102569568A (en) * | 2010-12-21 | 2012-07-11 | 展晶科技(深圳)有限公司 | LED epitaxial structure and processing procedure |
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- 2020-02-24 CN CN202010110828.8A patent/CN111180565B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007134443A (en) * | 2005-11-09 | 2007-05-31 | Mitsubishi Cable Ind Ltd | Nitride semiconductor light emitting diode |
| KR20120039811A (en) * | 2010-10-18 | 2012-04-26 | 서울옵토디바이스주식회사 | High efficiency light emitting diode and method of fabricating the same |
| CN204011468U (en) * | 2014-06-16 | 2014-12-10 | 江苏汉莱科技有限公司 | A kind of LED flip-chip |
| CN107799638A (en) * | 2017-10-24 | 2018-03-13 | 厦门乾照光电股份有限公司 | A kind of flip LED and preparation method thereof |
| CN211320132U (en) * | 2020-02-24 | 2020-08-21 | 佛山市国星半导体技术有限公司 | Flip LED chip |
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