CN111180565A - Flip LED chip - Google Patents

Flip LED chip Download PDF

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Publication number
CN111180565A
CN111180565A CN202010110828.8A CN202010110828A CN111180565A CN 111180565 A CN111180565 A CN 111180565A CN 202010110828 A CN202010110828 A CN 202010110828A CN 111180565 A CN111180565 A CN 111180565A
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layer
led chip
electrode
epitaxial
flip
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CN111180565B (en
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仇美懿
庄家铭
邓梓阳
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Foshan Nationstar Semiconductor Co Ltd
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Foshan Nationstar Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a flip LED chip which comprises a substrate, an epitaxial layer, a transparent conducting layer, a leveling layer, an adhesion layer, a reflection layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conducting layer is arranged on the epitaxial layer, the leveling layer is arranged on the transparent conducting layer and levels up a concave-convex structure of the epitaxial layer, the leveling layer is provided with a plurality of first holes, the adhesion layer is arranged on the leveling layer and filled into the first holes to form conductive connection with the transparent conducting layer, and the reflection layer is arranged on the adhesion layer. According to the invention, the filling layer is formed on the transparent conducting layer of the flip LED chip, the concave-convex structure of the epitaxial layer is filled to form a flat surface, and the reflecting layer arranged on the filling layer forms full-mirror reflection, so that light emitted by the epitaxial layer can be emitted from the back of the substrate in a concentrated manner after being reflected by the reflecting layer, and the light emitting efficiency of the chip is further improved.

Description

Flip LED chip
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to a flip LED chip.
Background
Referring to fig. 1, the conventional flip LED chip includes a substrate 10, an epitaxial layer 20 disposed on a front surface of the substrate 10, an ITO layer 30 disposed on the epitaxial layer 20, a reflective layer 40 disposed on the ITO layer 30, an insulating layer 50 disposed on the reflective layer 40, and an electrode 60. In the flip chip of the related art, light emitted from the epitaxial layer 20 on the side opposite to the substrate 10 is reflected by the reflective layer 40 and then emitted from the side opposite to the substrate 10. In the process of crystal growth, the surface of a general epitaxial layer structure is uneven, so that a reflecting layer 40 plated on the back cannot form a complete mirror surface, further the chip generates chromatic dispersion, light is not concentrated, and the light efficiency is poor after the chip is packaged into white light.
Disclosure of Invention
The invention aims to solve the technical problem of providing a flip LED chip, and the light emitting effect and the light emitting efficiency of the chip are improved.
In order to solve the technical problem, the invention provides a flip-chip LED chip which comprises a substrate, an epitaxial layer, a transparent conducting layer, a leveling layer, an adhesion layer, a reflecting layer and an electrode structure, wherein the epitaxial layer is arranged on the substrate, the transparent conducting layer is arranged on the epitaxial layer, the leveling layer is arranged on the transparent conducting layer and levels up a concave-convex structure of the epitaxial layer, the leveling layer is provided with a plurality of first holes, the adhesion layer is arranged on the leveling layer and fills the first holes to form conductive connection with the transparent conducting layer, the reflecting layer is arranged on the adhesion layer and forms a full-mirror-surface reflecting structure, the leveling layer is made of a transparent non-conducting material, and the adhesion layer is made of a transparent conducting material.
As an improvement of the scheme, the transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride and boron nitride.
As an improvement of the scheme, the transparent conductive material is one or more of ITO, Ni/Au oxide, AzO and ZnO.
As an improvement of the scheme, the thickness of the filling and leveling layer is 300-1000 nm;
the thickness of the adhesion layer is 10-100 nm.
As an improvement of the scheme, the diameter of the first holes is 3-5 mu m, and the distance between the first holes is 3-5 mu m.
As an improvement of the above scheme, the epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially disposed on the substrate, the epitaxial layer is provided with a second hole, and the second hole is etched from the second semiconductor layer to the first semiconductor layer;
the electrode structure comprises a first electrode and a second electrode, the first electrode is arranged on the first semiconductor layer exposed out of the second hole, and the second electrode penetrates through the reflecting layer, the bonding layer and the filling layer and is in conductive connection with the transparent conducting layer.
As an improvement of the above scheme, the reflective liquid crystal display further comprises a protective layer, wherein the protective layer covers the reflective layer to protect the reflective layer;
the protective layer is made of titanium-tungsten alloy.
As an improvement of the above scheme, the display device further comprises an insulating layer, wherein the insulating layer covers the protective layer, the first electrode and the second electrode to prevent side leakage;
the insulating layer is made of an insulating material.
As an improvement of the above scheme, the electrode structure further includes a first pad and a second pad, the first pad and the second pad are disposed on the insulating layer, the first pad penetrates through the insulating layer to be conductively connected with the first electrode, and the second pad penetrates through the insulating layer to be conductively connected with the second electrode.
As an improvement of the above scheme, the reflective layer is made of silver, and the transparent conductive layer is an ITO layer.
The implementation of the invention has the following beneficial effects:
according to the invention, the filling layer is formed on the transparent conducting layer of the flip LED chip, the concave-convex structure of the epitaxial layer is filled to form a flat surface, and the reflecting layer arranged on the filling layer forms full-mirror reflection, so that light emitted by the epitaxial layer can be emitted from the back of the substrate in a concentrated manner after being reflected by the reflecting layer, and the light emitting efficiency of the chip is further improved.
In addition, the adhesion layer is arranged on the filling layer, so that the reflection layer is adhered to the filling layer, the adhesion layer penetrates through the filling layer to form good conductive connection with the transparent conductive layer, a common conductive layer is formed, the current expansion performance of the flip LED chip is effectively improved, the influence of the filling layer is eliminated, and the voltage of the flip LED chip is reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional flip-chip LED chip;
fig. 2 is a schematic structural diagram of a flip LED chip of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2, the present invention provides a flip LED chip including a substrate 10, an epitaxial layer 20, a transparent conductive layer 30, a fill-in layer 40, an adhesive layer 50, a reflective layer 60, and an electrode structure.
The epitaxial layer 20 of the invention comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are sequentially arranged on the front surface of the substrate 10, wherein the epitaxial layer 20 is provided with a second hole, and the second hole is etched from the second semiconductor layer to the first semiconductor layer.
The transparent conductive layer 30 is disposed on the second semiconductor layer. Preferably, the transparent conductive layer 30 is an ITO layer. In order to ensure the current spreading performance of the transparent conductive layer 30, the thickness of the transparent conductive layer 30 on the second semiconductor layer is uniform, and thus the transparent conductive layer 30 cannot fill the roughness structure on the epitaxial layer 20.
The electrode structure includes a first electrode 71 and a second electrode 72, the first electrode 71 is disposed on the first semiconductor layer exposed from the second hole, and the second electrode 72 is disposed on the transparent conductive layer 30.
The filling and leveling layer 40 is disposed on the transparent conductive layer 30 outside the electrolytic structure, and fills and levels the rugged structure of the epitaxial layer 20 to form a flat surface, so that the reflective layer 60 disposed on the filling and leveling layer 40 forms a full mirror reflection.
The depth of the concave-convex structure of the epitaxial layer 20 is generally 200nm, and in order to ensure that the filling layer 40 can fill the concave-convex structure, the thickness of the filling layer 40 is preferably 300 to 1000 nm. Preferably, the thickness of the filling and leveling layer 40 is 400-600 nm.
Since light emitted from the active layer needs to pass through the filling-up layer 40 before being reflected by the reflective layer 60, if the thickness of the filling-up layer 40 is greater than 1000nm, the filling-up layer 40 absorbs light, and the light-emitting efficiency of the chip is reduced.
In order not to affect the light extraction efficiency of the chip and to prevent short circuit between the first electrode and the second electrode, the filling layer 40 of the present invention must be made of a transparent non-conductive material. Preferably, the transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride and boron nitride. The material has high light transmittance and can be well adhered to the transparent conductive layer 30 so as to avoid falling off.
It should be noted that the difference between the materials of the reflective layer 60 and the transparent conductive layer 30 is large, the transparent non-conductive material of the leveling layer 40 of the present invention can only adhere well to the transparent conductive layer 30, and the reflective layer 60 of the present invention cannot be directly attached to the leveling layer 40.
To ensure that the reflective layer 60 can adhere to the leveling layer 40 to create specular reflection, the adhesive layer 50 of the present invention is disposed between the leveling layer 40 and the reflective layer 60 to adhere the reflective layer 60 to the leveling layer 40.
In order to further improve the photoelectric performance of the chip, the filling layer 40 is provided with a plurality of first holes, and the first holes penetrate through the filling layer 40. The adhesion layer 50 is filled into the first hole to form a conductive connection with the transparent conductive layer 30. Specifically, the adhesion layer 50 and the transparent conductive layer 30 are combined to form a common conductive layer, so as to improve the current spreading capability of the chip and reduce the voltage of the chip.
The adhesive layer 50 is made of a transparent conductive material. Preferably, the transparent conductive material is one or more of ITO, Ni/Au oxide, AzO and ZnO. The material has high light transmittance, and can form good connection between the filling layer 40 and the reflecting layer 60 so as to prevent the reflecting layer 60 from falling off.
In order to ensure that the adhesive layer 50 can have a good adhesive effect, the thickness of the adhesive layer 50 is preferably 10-100 nm. Since the light emitted from the active layer needs to pass through the adhesive layer 50 before being reflected by the reflective layer 60, if the thickness of the adhesive layer 50 is greater than 100nm, the adhesive layer 50 absorbs the light, and the light extraction efficiency of the chip is reduced.
Note that if the flip LED chip of the present invention does not have the adhesive layer 50, the reflective layer 60 cannot be formed on the filling layer 40.
In order to further improve the bonding force between the adhesion layer 50 and the transparent conductive layer and reduce the chip voltage, preferably, the diameter of the first holes is 3 to 5 μm, and the distance between the first holes is 3 to 5 μm. If the diameter of the first hole is larger than 5 μm, the contact area between the electrode structure and the conductive layer is too small, thereby increasing the voltage of the chip.
It should be noted that the diameter and the pitch of the first holes need to be matched with each other to effectively reduce the voltage of the chip. For example: the diameter of the first holes is 3 μm, the chip voltage of the first holes with a pitch of 5 μm is higher than the chip voltage of the first holes with a diameter of 5 μm and a pitch of 3 μm.
In addition, the diameter of the first holes is 3 μm, the chip voltage of the first holes with a pitch of 5 μm is lower than the chip voltage of the first holes with a diameter of 5 μm and a pitch of 5 μm.
In order to improve the reflection efficiency of the reflective layer 60, the reflective layer 60 of the present invention is a metal reflective layer 60, and preferably, the reflective layer 60 is made of silver, but is not limited thereto.
In order to prevent the metal of the reflective layer 60 from migrating, it is preferable that the reflective layer 60 is covered with a primary protective layer 80, and the protective layer 80 is made of titanium tungsten alloy, but not limited thereto.
In order to prevent the chip leakage, the flip LED chip of the present invention further includes an insulating layer 90, and the insulating layer 90 covers the protective layer 80, the first electrode 71, and the second electrode 72. The insulating layer 90 needs to be etched to expose the first electrode 71 and the second electrode 72.
Preferably, the insulating layer 90 is made of an insulating material.
The electrode structure further includes a first pad 73 and a second pad 74, the first pad 73 and the second pad 74 are disposed on the insulating layer 90, and the first pad 73 is electrically connected to the first electrode conductor 71, and the second pad 74 is electrically connected to the second electrode 72. Preferably, the first pads 73 and the second pads 74 have equal areas.
The invention will be further illustrated by the following specific examples
Example 1
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of silicon oxide, the adhesive layer is made of ITO, the reflecting layer is made of silver, the thickness of the filling and leveling layer is 300nm, the thickness of the adhesion layer is 10nm, the thickness of the reflection layer is 50nm, the diameter of the first holes is 3 microns, and the distance between the first holes is 3 microns.
Example 2
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of aluminum oxide, the adhesion layer is made of Ni/Au oxide, the reflection layer is made of silver, the thickness of the filling and leveling layer is 500nm, the thickness of the adhesion layer is 30nm, the thickness of the reflection layer is 50nm, the diameter of the first holes is 4 microns, and the distance between the first holes is 4 microns.
Example 3
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of magnesium difluoride, the adhesive layer is made of AzO, the reflective layer is made of silver, the thickness of the leveling layer is 700nm, the thickness of the adhesion layer is 60nm, the thickness of the reflection layer is 50nm, the diameter of the first holes is 4 microns, and the distance between the first holes is 4 microns.
Example 4
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of boron nitride, the adhesion layer is made of ZnO, the reflection layer is made of silver, the thickness of the filling and leveling layer is 900nm, the thickness of adhesion layer is 90nm, the thickness of reflection stratum is 50nm, the diameter of first hole is 5 mu m, and the interval of first hole is 5 mu m.
Example 5
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of boron nitride, the adhesion layer is made of ZnO, the reflection layer is made of silver, the thickness of the filling and leveling layer is 1200nm, the thickness of the adhesion layer is 80nm, the thickness of the reflection layer is 50nm, the diameter of the first holes is 7 microns, and the distance between the first holes is 5 microns.
Example 6
A flip-chip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a filling layer, an adhesion layer, a reflection layer and an electrode structure, the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the filling layer is arranged on the transparent conductive layer to fill up the concave-convex structure of the epitaxial layer, the filling layer is provided with a plurality of first holes, the adhesion layer is arranged on the filling layer and filled into the first holes to form conductive connection with the transparent conductive layer, the reflecting layer is arranged on the adhesive layer to form full mirror reflection, the filling and leveling layer is made of silicon oxide, the adhesive layer is made of ITO, the reflecting layer is made of silver, the thickness of the filling and leveling layer is 1500nm, the thickness of the adhesion layer is 100nm, the thickness of the reflection layer is 50nm, the diameter of the first holes is 10 microns, and the distance between the first holes is 4 microns.
Comparative example 1
The utility model provides a flip-chip LED chip, includes substrate, epitaxial layer, transparent conducting layer, reflection stratum and electrode structure, the epitaxial layer is located on the substrate, transparent conducting layer locates on the epitaxial layer, the reflection stratum sets up on transparent conducting layer, the reflection stratum is made by silver, the thickness of reflection stratum is 50 nm.
The flip-chip LED chips of examples 1-6 and comparative example 1 were subjected to a photo-electric test, and all chips had a size of 5555a4, with the following results:
group of Voltage (V) Luminance (mw) Wavelength (nm)
Comparative example 1 2.84 600 450
Example 1 2.84 620 450
Example 2 2.83 620 450
Example 3 2.84 618 450
Example 4 2.84 618 450
Example 5 2.86 608 450
Example 6 2.97 606 450
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (10)

1. The utility model provides a flip-chip LED chip, its characterized in that includes substrate, epitaxial layer, transparent conducting layer, fill flat layer, adhesion layer, reflection stratum and electrode structure, the substrate is located to the epitaxial layer, transparent conducting layer is located on the epitaxial layer, fill flat layer locate on the transparent conducting layer and fill the concave-convex structure of epitaxial layer flat, fill flat layer and be equipped with the first hole of a plurality of, the adhesion layer is located on filling flat layer and is filled in the first hole and form the electrically conductive connection with transparent conducting layer, the reflection stratum is located on the adhesion layer and form full mirror surface reflection configuration, fill flat layer and make by transparent non-conductive material, the adhesion layer is made by transparent conducting material.
2. The flip-chip LED chip of claim 1 wherein the transparent non-conductive material is one or more of silicon oxide, aluminum oxide, silicon nitride, magnesium difluoride, and boron nitride.
3. The flip LED chip of claim 2, wherein the transparent conductive material is one or more of ITO, Ni/Au oxide, AzO, and ZnO.
4. The flip LED chip of claim 3, wherein the fill-level layer has a thickness of 300 to 1000 nm;
the thickness of the adhesion layer is 10-100 nm.
5. The flip-chip LED chip of claim 1, wherein the diameter of the first holes is 3 to 5 μm and the pitch of the first holes is 3 to 5 μm.
6. The flip-chip LED chip of claim 1, wherein the epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed on the substrate, the epitaxial layer being provided with a second hole etched from the second semiconductor layer to the first semiconductor layer;
the electrode structure comprises a first electrode and a second electrode, the first electrode is arranged on the first semiconductor layer exposed out of the second hole, and the second electrode penetrates through the reflecting layer, the bonding layer and the filling layer and is in conductive connection with the transparent conducting layer.
7. The flip LED chip of claim 6, further comprising a protective layer overlying the reflective layer to protect the reflective layer;
the protective layer is made of titanium-tungsten alloy.
8. The flip LED chip of claim 7, further comprising an insulating layer overlying the protective layer, the first electrode and the second electrode to prevent side leakage;
the insulating layer is made of an insulating material.
9. The flip LED chip of claim 8, wherein the electrode structure further comprises first and second pads disposed on the insulating layer, the first pads being conductively coupled to the first electrode through the insulating layer, and the second pads being conductively coupled to the second electrode through the insulating layer.
10. The flip LED chip of claim 1, wherein the reflective layer is made of silver and the transparent conductive layer is an ITO layer.
CN202010110828.8A 2020-02-24 2020-02-24 Flip LED chip Active CN111180565B (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2022068939A1 (en) * 2020-09-30 2022-04-07 深圳市晶相技术有限公司 Semiconductor structure and application thereof

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US20120153332A1 (en) * 2010-12-21 2012-06-21 Advanced Optoelectronic Technology, Inc. Epitaxial structure of an led and manufacturing method thereof
CN204011468U (en) * 2014-06-16 2014-12-10 江苏汉莱科技有限公司 A kind of LED flip-chip
CN107799638A (en) * 2017-10-24 2018-03-13 厦门乾照光电股份有限公司 A kind of flip LED and preparation method thereof
CN211320132U (en) * 2020-02-24 2020-08-21 佛山市国星半导体技术有限公司 Flip LED chip

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JP2007134443A (en) * 2005-11-09 2007-05-31 Mitsubishi Cable Ind Ltd Nitride semiconductor light emitting diode
US20090050909A1 (en) * 2007-08-20 2009-02-26 Delta Electronics, Inc. Light-emitting diode apparatus and manufacturing method thereof
KR20120039811A (en) * 2010-10-18 2012-04-26 서울옵토디바이스주식회사 High efficiency light emitting diode and method of fabricating the same
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Publication number Priority date Publication date Assignee Title
WO2022068939A1 (en) * 2020-09-30 2022-04-07 深圳市晶相技术有限公司 Semiconductor structure and application thereof
TWI823150B (en) * 2020-09-30 2023-11-21 大陸商深圳市晶相技術有限公司 A semiconductor structure and an application thereof

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