CN111146223B - 一种复合介质栅双器件光敏探测器的晶圆堆叠结构 - Google Patents
一种复合介质栅双器件光敏探测器的晶圆堆叠结构 Download PDFInfo
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- CN111146223B CN111146223B CN201911257285.6A CN201911257285A CN111146223B CN 111146223 B CN111146223 B CN 111146223B CN 201911257285 A CN201911257285 A CN 201911257285A CN 111146223 B CN111146223 B CN 111146223B
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- 239000002131 composite material Substances 0.000 title claims abstract description 35
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- 238000010168 coupling process Methods 0.000 claims description 18
- 238000005859 coupling reaction Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 21
- 230000006870 function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
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Priority Applications (1)
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CN201911257285.6A CN111146223B (zh) | 2019-12-10 | 2019-12-10 | 一种复合介质栅双器件光敏探测器的晶圆堆叠结构 |
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CN201911257285.6A CN111146223B (zh) | 2019-12-10 | 2019-12-10 | 一种复合介质栅双器件光敏探测器的晶圆堆叠结构 |
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CN111146223A CN111146223A (zh) | 2020-05-12 |
CN111146223B true CN111146223B (zh) | 2022-07-08 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0038697A1 (en) * | 1980-04-22 | 1981-10-28 | Semiconductor Research Foundation | Semiconductor image sensor |
CN107180844A (zh) * | 2017-06-26 | 2017-09-19 | 南京大学 | 一种复合介质栅电容耦合变增益光敏探测器及其工作方法 |
US9991298B1 (en) * | 2017-02-03 | 2018-06-05 | SmartSens Technology (US), Inc. | Stacked image sensor pixel cell with a charge amplifier and selectable shutter modes and in-pixel CDS |
CN109979930A (zh) * | 2017-12-28 | 2019-07-05 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4552240B2 (ja) * | 1999-09-09 | 2010-09-29 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
FR2888989B1 (fr) * | 2005-07-21 | 2008-06-06 | St Microelectronics Sa | Capteur d'images |
US7940252B2 (en) * | 2007-10-18 | 2011-05-10 | Himax Technologies Limited | Optical sensor with photo TFT |
JP2010073735A (ja) * | 2008-09-16 | 2010-04-02 | Fujifilm Corp | 固体撮像装置及びその製造方法 |
JP5963421B2 (ja) * | 2011-11-17 | 2016-08-03 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
CN102695007B (zh) * | 2012-05-15 | 2014-10-29 | 格科微电子(上海)有限公司 | 图像传感器及其驱动方法 |
KR20150016232A (ko) * | 2012-05-25 | 2015-02-11 | 소니 주식회사 | 촬상 소자, 구동 방법 및 전자 장치 |
CN104900667B (zh) * | 2015-05-06 | 2018-03-02 | 南京大学 | 一种基于复合介质栅mosfet的多模态双晶体管光敏探测器 |
CN107658321B (zh) * | 2016-07-25 | 2019-12-27 | 南京威派视半导体技术有限公司 | 基于复合介质栅的双器件光敏探测单元、探测器及其方法 |
US10116891B2 (en) * | 2016-10-07 | 2018-10-30 | Stmicroelectronics (Research & Development) Limited | Image sensor having stacked imaging and digital wafers where digital wafer has stacked capacitors and logic circuitry |
US10535695B2 (en) * | 2018-03-13 | 2020-01-14 | Stmicroelectronics (Research & Development) Limited | Stacked wafer arrangement for global shutter pixels utilizing capacitive deep trench isolations |
CN109801935B (zh) * | 2019-01-31 | 2021-01-26 | 京东方科技集团股份有限公司 | 光探测面板及其制作方法、显示装置 |
-
2019
- 2019-12-10 CN CN201911257285.6A patent/CN111146223B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0038697A1 (en) * | 1980-04-22 | 1981-10-28 | Semiconductor Research Foundation | Semiconductor image sensor |
US9991298B1 (en) * | 2017-02-03 | 2018-06-05 | SmartSens Technology (US), Inc. | Stacked image sensor pixel cell with a charge amplifier and selectable shutter modes and in-pixel CDS |
CN107180844A (zh) * | 2017-06-26 | 2017-09-19 | 南京大学 | 一种复合介质栅电容耦合变增益光敏探测器及其工作方法 |
CN109979930A (zh) * | 2017-12-28 | 2019-07-05 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
Non-Patent Citations (1)
Title |
---|
垂直电荷成像器件(VPS)的工作机理及其微光夜视可行性的研究;马浩文;《中国优秀硕士学位论文全文数据库》;20150731;全文 * |
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