CN111146179A - 半导体衬底 - Google Patents

半导体衬底 Download PDF

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CN111146179A
CN111146179A CN201911058290.4A CN201911058290A CN111146179A CN 111146179 A CN111146179 A CN 111146179A CN 201911058290 A CN201911058290 A CN 201911058290A CN 111146179 A CN111146179 A CN 111146179A
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layer
power semiconductor
semiconductor module
arrangement according
module arrangement
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G·特罗斯卡
H·哈通
M·诺曼
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明公开了一种半导体衬底(10)，其包括电介质绝缘层(110)和附接到所述电介质绝缘层(110)的第一金属化层(111)。所述电介质绝缘层(110)包括具有处于25至180W/mK之间的导热率和处于15至50kV/mm之间的绝缘强度的第一材料(40)、和第二导电或半导电材料(41)，其中，所述第二材料(41)均匀分布在所述第一材料(40)内。

Description

半导体衬底
技术领域
本公开涉及一种半导体衬底，尤其涉及一种用于功率半导体模块的半导 体衬底。
背景技术
功率半导体模块装置通常包括壳体内的基板。至少一个衬底布置在基板 上。包括多个可控半导体部件(例如，半桥配置的两个IGBT)的半导体装 置通常被布置在至少一个衬底上。每个衬底通常包括衬底层(例如，陶瓷 层)、沉积在衬底层的第一侧上的第一金属化层和沉积在衬底层的第二侧上 的第二金属化层。可控半导体部件例如安装在第一金属化层上。第一金属 化层可以是结构化层，而第二金属化层通常是连续层。第二金属化层通常 附接到基板。
由可控半导体部件产生的热量通过衬底散发到基板或散热器。由于第一 金属化层通常是结构化层，因此在使用半导体装置期间在衬底中发生的电 场分布是不均匀的，并且可能导致局部尖峰。在高电场强度的区域中，可 能会发生局部放电效应。这些局部放电效应可能导致衬底层的劣化，这可 能缩短功率半导体模块装置的寿命。
需要一种改进的半导体衬底，该半导体衬底具有良好的导热性并具有对 局部放电效应的提高的抵抗能力。
发明内容
半导体衬底包括：电介质绝缘层和附接到电介质绝缘层的第一金属化层。 电介质绝缘层包括具有处于25至180W/mK之间的导热率和处于15至50 kV/mm之间的绝缘强度的第一材料、和第二导电或半导电材料，其中第二 材料均匀分布在第一种材料内。
参考以下附图和描述可以更好地理解本发明。附图中的部件不一定按比 例绘制，而是将重点放在说明本发明的原理上。此外，在附图中，贯穿不 同的视图，相似的附图标记表示对应的部分。
附图说明
图1示出了半导体衬底装置的截面图。
图2示意性地示出了图1的半导体衬底装置的一部分的截面图。
图3示意性地示出了氮化铝的晶体结构。
图4示意性地示出了根据一个示例的半导体衬底的结构。
图5示意性地示出了氮化锆的晶体结构。
图6示意性地示出了根据一个示例的具有半导体衬底的半导体衬底装 置的截面图。
图7示意性地示出了电介质绝缘层。
图8示意性地示出了多层半导体衬底的截面图。
具体实施方式
在下面的详细描述中，参考了附图。附图示出了可以实践本发明的具体 示例。应当理解，除非另外特别指出，否则关于各个示例描述的特征和原 理可以彼此组合。在说明书以及权利要求书中，某些元件被指定为“第一 元件”、“第二元件”、“第三元件”等不应被理解为列举。相反，这种指定 仅用于解决不同的“元件”。即，例如，“第三元件”的存在不需要“第一 元件”和“第二元件”的存在。本文所述的半导体主体可以由(掺杂的) 半导体材料制成，并且可以是半导体芯片或被包括在半导体芯片中。半导 体主体具有电连接的焊盘并且包括至少一个具有电极的半导体元件。
图1示例性地示出了包括半导体衬底10的功率半导体模块装置。半导 体衬底10包括电介质绝缘层110、附接到电介质绝缘层110的结构化的第 一金属化层111、以及附接到电介质绝缘层110的第二金属化层112。电介 质绝缘层110设置在第一和第二金属化层111、112之间。功率半导体模块 装置还可以包括壳体50，其中壳体50可以包括侧壁和盖。
第一和第二金属化层111、112中的每一个可以由以下材料之一组成或 包括以下材料之一：铜；铜合金；铝；铝合金；在功率半导体模块装置的 操作期间保持固态的任何其他金属或合金。半导体衬底10是陶瓷衬底，即， 其中电介质绝缘层110是陶瓷(例如薄陶瓷层)的衬底。陶瓷可以由以下 材料之一组成或包括以下材料之一：氧化铝；氮化铝；氧化锆；氮化硅； 氮化硼；或任何其他电介质陶瓷。例如，电介质绝缘层110可以由以下材 料之一组成或包括以下材料之一：Al2O3、AlN或Si3N4。例如，衬底可以是 例如直接铜接合(DCB)衬底、直接铝接合(DAB)衬底或活性金属钎焊 (AMB)衬底。电介质绝缘层110通常包括高绝缘电阻，同时具有低导热 系数。
通常，一个或多个半导体主体20布置在半导体衬底10上。布置在半导 体衬底10上的半导体主体20中的每一个可以包括二极管、IGBT(绝缘栅 双极晶体管)、MOSFET(金属氧化物半导体场效应晶体管)、JFET(结型 场效应晶体管)、HEMT(高电子迁移率晶体管)、或任何其他适合的可控半 导体元件。一个或多个半导体主体20可以在半导体衬底上形成半导体装置。 在图1中，示例性地示出了两个半导体主体20。然而，任何其他数量的半 导体主体20也是可能的。
半导体衬底10可以附接到基板或散热器30，并且第二金属化层112布 置在电介质绝缘层110和基板/散热器30之间。然而，这仅是示例。已知其 他半导体模块装置，其中半导体衬底10仅包括第一金属化层111，并且其 中省略了第二金属化层112。在这样的功率半导体模块装置中，电介质绝缘 层110可以形成基板并且可以附接到散热器30，而没有第二金属化层112 布置在电介质绝缘层110和散热器30之间。半导体主体20产生的热量可 以通过半导体衬底10散发到基板或散热器30。这在图1中以粗箭头示例性 地示出。图1中的半导体衬底10的第二金属化层112是连续层。图1中的 半导体衬底10的第一金属化层111是图1所示装置中的结构化层。“结构 化层”意味着第一金属化层111不是连续层，而是在该层的不同部分之间 包括凹陷。在图1中示意性地示出了这种凹陷。在该装置中，第一金属化 层111示例性地包括四个不同部分。不同的半导体主体20可以安装到第一 金属化层111的相同或不同部分。第一金属化层111的不同部分可以不具有 电连接，或者可以使用诸如接合线的电连接而电连接到一个或多个其他部 分。电连接还可以包括例如连接板或导体轨，这仅是几个示例。然而，第 一金属化层111为结构化层仅是示例。第一金属化层111也可能是连续层。
在使用功率半导体模块装置期间，在装置内产生电场。这样的电场可以 不均匀地分布在电介质绝缘层110内。在半导体装置的使用期间的典型电 压的范围高达6500V ACRMS(均方根)，例如，这在电介质绝缘层110内， 特别是在与(结构化的)第一金属化层111相邻(与第一金属化层111和电 介质绝缘层110之间的结相邻)的区域中，产生高达60kV/mm或甚至更高 的电场强度。由于高电场强度，可能会超过电介质绝缘层110的绝缘强度， 从而在电介质绝缘层110的一些部分中产生局部放电效应。局部放电效应 通常是陶瓷材料的缓慢生长劣化，通常靠近在第一金属化层111和电介质 绝缘层110之间形成结的区域中的表面。这在图2中示意性地示出，其示 例性地示出了图1的半导体衬底10的截面A。从图2中可见，劣化通常以 树状延伸到电介质绝缘层110中，由此削弱了电介质绝缘层110。
由局部放电效应引起的劣化与几种物理原理有关。一方面，如前所述， 它们取决于电场强度。另一方面，它们取决于电介质绝缘层110内的路径 的平均自由长度，其为带电粒子能够在电场中加速的距离。电介质绝缘材 料内的空腔可以用作用于部分放电的再生中心，因为它们可以使平均自由 长度变得足够大，以使其他自由电荷载流子移动到更高的能级，这又可能 导致其他自由电荷载流子移动到更高的能级。这样，可能发生雪崩效应。
如前所述，电介质绝缘层110可以包括例如氮化铝(AlN)。图3中示 例性地示出了AlN的晶体结构。铝Al3+和氮化物N3-原子均匀地分布在晶格 内。陶瓷晶体通常具有三角形或针形结构，如图3中的虚线所指示的。其 他陶瓷材料的晶体也可以具有相似的结构。这样的晶体结构可以促进在电 介质绝缘层110内形成空腔，这可能导致上面概述的缺点。
如图4中示意性示出的，根据一个示例，电介质绝缘层110包括第一材 料40和第二材料41。第一材料40具有处于25-180W/mK之间的导热率和 处于15至50kV/mm之间的绝缘强度。如上所述，第一材料40例如可以是 陶瓷材料。例如，第一材料40可以包括Al2O3、AlN和Si3N4中的一种。然 而，具有处于25-180W/mK之间的导热率和处于15至50kV/mm之间的绝 缘强度的任何其他适合的材料也是可能的。第二材料41可以被添加到第一 材料40并且可以均匀地分布在第一材料40内。现在参考图7，电介质绝缘 层110包括第一长度l、第一宽度w和第一高度h。第一高度h对应于第一 金属化层111与第二金属化层112(图7中未示出金属化层111、112)之间 的距离。因此，电介质绝缘层110形成第一体积V＝l*w*h。第二材料 41可以均匀地分布在整个体积V内。
第二材料41是导电或半导电材料。一般而言，第一材料40具有第一比 电阻，并且第二材料41具有第二比电阻，其中第二比电阻小于第一比电阻。 因此，与仅由第一材料40形成的电介质绝缘层110相比，将特定量的第二 材料41添加到第一材料40将电介质绝缘层110的电阻减小到一定程度并 且增大了电介质绝缘层110的电导率。因此，第二材料41的量应该被选择 为使得电介质绝缘层110的足够的绝缘能力仍然被保持。添加少量的第二 材料41通常不会导致电介质绝缘层110的绝缘性质显著降低。
添加到第一材料40的第二材料41的量可以取决于第一材料40的类型。 例如，可以添加到AlN的第二材料41的量可以显著低于可以添加到Si3N4的第二材料41的量。在任何情况下，第一材料40的量可以大于第二材料 41的量。例如，第一材料40的量与第二材料41的量之间的比率可以小于 9:1。包括超过第二材料41的10％的电介质绝缘层110可能无法提供足够 的绝缘强度。第二材料41的量可以取决于用于电介质绝缘层110的第一材 料40的类型。对于一些类型的第一材料40，第二材料41的最大量可以仅 为大约5％。对于大多数应用，电介质绝缘层110内的第二材料41的量可 以在5％和10％之间。第二材料41可以包括均匀地分布在第一材料40的 晶格内的颗粒。第一材料40内的第二材料41的量可以足够低，使得第二 材料41的多个相邻颗粒不形成导电路径。
在图4中，仅为了方便起见，以圆形示意性地示出了第一材料40和第 二材料41的颗粒。图4仅用于以非常简单的方式示出第二材料41在第一 材料40内的分布。第二材料41的一些颗粒可以被布置为与电介质绝缘层 110的表面之一相邻。其他颗粒可以被第一材料40的颗粒包围。第二材料 41可以包括例如具有小于100μm或小于1μm的颗粒尺寸的颗粒。颗粒尺寸 可以取决于第二材料41对电介质绝缘层110的机械性质的影响。例如，如 果第二材料41的颗粒尺寸太大，则可能降低电介质绝缘层110的断裂强度。 然而，这取决于用于形成电介质绝缘层110的第一材料40。
第二材料41可以包括例如ZrN、ZrO2和石墨中的至少一种。然而，这 些材料仅是示例。可以使用与第一材料40兼容的任何其他适合的导电或半 导电材料。在本文中兼容意味着第二材料41的颗粒可以插入第一材料40 的晶体结构中。在图5中示例性地示出了ZrN的结构。如图5中的虚线所 示，ZrN结构具有八面体的形状。通过将不同形状的该材料添加到陶瓷材 料的三角形中，可以减少空腔的形成。此外，如果在第二材料41的颗粒附 近出现高电场强度，则该选择性场应变可以由颗粒以较低的电阻扩展到较 大的区域上，这可以减少由于永久的选择性电场应变而产生的电介质绝缘 层110的陶瓷材料的劣化。
从以上描述可以看出，第二材料41在第一材料40内形成俘获中心，这 减小了用于电介质绝缘层110内的自由电荷载流子的路径的平均自由长度。 因此，可以减少、甚至预防雪崩效应。电场更均匀地分布在电介质绝缘层 110内。
根据一个示例，第一材料40是氮化硅Si3N4，并且第二材料是氮化锆 ZrN。氮化硅通常具有非常高的断裂强度。然而，氮化硅通常不适合要求超 过3300V AC RMS的电压的高电压应用，因为它易受局部放电效应的影响。 在高电场强度下，氮化硅往往会完全失去其绝缘性质。例如，高度h为1mm 的由氮化硅形成的电介质绝缘层110可能在大约8至10kV ACRMS的电压 下失去其绝缘性质。将例如氮化锆添加到氮化硅增大了电介质绝缘层110 的电稳定性。与仅包括氮化硅的电介质绝缘层110相比，包括氮化硅和特 定量的氮化锆的电介质绝缘层110可以用于较高电压。例如，对于包括氮 化硅和特定量的氮化锆的层，可能有3300V AC RMS或更高的电压。通常 在1700V AC RMS或更低的电压下使用纯氮化硅衬底。
根据另一个示例，第一材料40是Al2O3，并且第二材料41是ZrO2。根 据另一个示例，第一材料40是AlN，并且第二材料41是ZrN。
图6示例性地示出了包括半导体衬底10的功率半导体模块装置，如上 面关于图3至图5所描述的。该装置大体上类似于图1的装置。然而，如 上所述，图6的示例中的半导体衬底10包括第一材料40和第二材料41。 包括第一材料40和第二材料41的电介质绝缘层110也可以用于多层衬底 中，如图8中示意性示出的。在图8中示例性示出的多层基板还包括第二 电介质绝缘层113。第一金属化层111布置在第一电介质绝缘层110和第二 电介质绝缘层113之间，第三金属化层114形成在第二电介质绝缘层113 的顶表面上。第一金属化层111和第三金属化层114通过延伸穿过第二电介 质绝缘层113的过孔120而连接。半导体主体20被布置在第三金属化层114 上。第一和第二电介质绝缘层110、113都可以包括第一材料40和均匀地 分布在第一材料40内的第二材料41，如上面参照图4至图7所描述的。

Claims (15)

1.一种功率半导体模块装置，包括半导体衬底(10)，所述半导体衬底(10)包括：
电介质绝缘层(110)；以及
附接到所述电介质绝缘层(110)的第一金属化层(111)；其中
所述电介质绝缘层(110)包括具有处于25至180W/mK之间的导热率和处于15至50kV/mm之间的绝缘强度的第一材料(40)、和第二导电或半导电材料(41)，其中，所述第二材料(41)均匀分布在所述第一材料(40)内。
2.根据权利要求1所述的功率半导体模块装置，其中，所述电介质绝缘层(110)包括第一量的所述第一材料(40)和第二量的所述第二材料(41)，并且其中，所述第一量大于所述第二量。
3.根据权利要求2所述的功率半导体模块装置，其中，所述电介质绝缘层(110)中的所述第二材料(41)的量小于10％。
4.根据权利要求2所述的功率半导体模块装置，其中，所述电介质绝缘层(110)中的所述第二材料(41)的量在5％至10％之间。
5.根据权利要求1至4中任一项所述的功率半导体模块装置，其中，所述第一材料(40)包括Al2O3、AlN和Si3N4中的一种。
6.根据权利要求1至5中任一项所述的功率半导体模块装置，其中，所述第二材料(41)包括ZrN、ZrO2和石墨中的至少一种。
7.根据前述权利要求中任一项所述的功率半导体模块装置，其中，所述第二材料(41)包括具有小于100μm或小于1μm的颗粒尺寸的颗粒。
8.根据前述权利要求中任一项所述的功率半导体模块装置，其中，
所述电介质绝缘层(110)包括第一长度(l)、第一宽度(w)和第一高度(h)，由此形成第一体积(V)，其中，所述第一高度(h)对应于所述第一金属化层和所述第二金属化层(111、112)之间的距离，并且
所述第二材料(41)均匀地分布在整个所述第一体积(V)中。
9.根据前述权利要求中任一项所述的功率半导体模块装置，其中，所述第一材料(40)具有第一比电阻，并且所述第二材料(41)具有第二比电阻，并且其中，所述第二比电阻小于所述第一比电阻。
10.根据前述权利要求中任一项所述的功率半导体模块装置，其中，所述第一金属化层(111)是仅部分地覆盖所述电介质绝缘层(110)的第一表面的结构化金属化层。
11.根据前述权利要求中任一项所述的功率半导体模块装置，其中，所述半导体衬底(10)还包括附接到所述电介质绝缘层(110)的第二金属化层(112)，其中，所述电介质绝缘层(110)设置在所述第一金属化层和所述第二金属化层(111、112)之间。
12.根据权利要求11所述的功率半导体模块装置，其中，所述第二金属化层(112)被配置为附接到基板或散热器(30)。
13.根据前述权利要求中任一项所述的功率半导体模块装置，还包括安装到所述第一金属化层(111)的至少一个半导体主体(20)。
14.根据权利要求1至10中任一项所述的功率半导体模块装置，还包括第二电介质绝缘层(113)和第三金属化层(114)，其中
所述第一金属化层(111)布置在所述第一电介质绝缘层(110)和所述第二电介质绝缘层(113)之间；
所述第二电介质绝缘层(113)布置在所述第一金属化层(111)与所述第三金属化层(114)之间；
至少一个半导体主体(20)安装到所述第三金属化层(114)；并且
所述第二电介质绝缘层(113)包括所述第一材料(40)和所述第二导电或半导电材料(41)，其中，所述第二材料(41)均匀地分布在第一材料(40)内。
15.根据前述权利要求中任一项所述的功率半导体模块装置，还包括以下各项中的至少一个：
壳体(50)；
基板；以及
散热器(30)。
CN201911058290.4A 2018-11-02 2019-11-01 半导体衬底 Pending CN111146179A (zh)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220028752A1 (en) * 2020-07-27 2022-01-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and method for forming the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869890A (en) * 1995-01-19 1999-02-09 Fuji Electric Co., Ltd. Insulation substrate for a semiconductor device
CN101140915A (zh) * 2006-09-08 2008-03-12 聚鼎科技股份有限公司 电子元件的散热衬底
CN102208380A (zh) * 2010-03-31 2011-10-05 英飞凌科技股份有限公司 冷却结构
CN102395540A (zh) * 2009-04-03 2012-03-28 株式会社住友金属电设备 陶瓷烧结体及采用其的半导体装置用基板
CN102956610A (zh) * 2011-08-16 2013-03-06 英飞凌科技股份有限公司 半导体装置
DE102013210146A1 (de) * 2013-05-31 2014-12-04 Infineon Technologies Ag Leistungshalbleitermodulanordnung
CN105459515A (zh) * 2014-08-28 2016-04-06 比亚迪股份有限公司 一种陶瓷基板及其制备方法和一种功率模块
EP3210951A1 (de) * 2016-02-26 2017-08-30 Heraeus Deutschland GmbH & Co. KG Kupfer-keramik-verbund
CN108603294A (zh) * 2016-02-19 2018-09-28 新日铁住金株式会社 陶瓷层叠体、陶瓷绝缘基板及陶瓷层叠体的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4436644C2 (de) * 1994-10-13 1998-01-22 Sternplastic Hellstern Gmbh & Verwendung von Aluminiumoxid als Leiterplattensubstrat
US6613443B2 (en) * 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate
DE10130517C2 (de) * 2001-06-25 2003-07-24 Eupec Gmbh & Co Kg Hochspannungsmodul und Verfahren zu dessen Herstellung
EP3186077A4 (en) * 2014-08-28 2018-04-18 BYD Company Limited Ceramic substrate, manufacturing method thereof, and power module
CN107207366B (zh) * 2015-01-23 2020-11-24 株式会社东芝 高热导性氮化硅烧结体、使用了其的氮化硅基板及氮化硅电路基板以及半导体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869890A (en) * 1995-01-19 1999-02-09 Fuji Electric Co., Ltd. Insulation substrate for a semiconductor device
CN101140915A (zh) * 2006-09-08 2008-03-12 聚鼎科技股份有限公司 电子元件的散热衬底
CN102395540A (zh) * 2009-04-03 2012-03-28 株式会社住友金属电设备 陶瓷烧结体及采用其的半导体装置用基板
CN102208380A (zh) * 2010-03-31 2011-10-05 英飞凌科技股份有限公司 冷却结构
CN102956610A (zh) * 2011-08-16 2013-03-06 英飞凌科技股份有限公司 半导体装置
DE102013210146A1 (de) * 2013-05-31 2014-12-04 Infineon Technologies Ag Leistungshalbleitermodulanordnung
CN105459515A (zh) * 2014-08-28 2016-04-06 比亚迪股份有限公司 一种陶瓷基板及其制备方法和一种功率模块
CN108603294A (zh) * 2016-02-19 2018-09-28 新日铁住金株式会社 陶瓷层叠体、陶瓷绝缘基板及陶瓷层叠体的制造方法
EP3210951A1 (de) * 2016-02-26 2017-08-30 Heraeus Deutschland GmbH & Co. KG Kupfer-keramik-verbund

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