CN111146085A - Texturing reworking method for diamond wire cut silicon wafer - Google Patents
Texturing reworking method for diamond wire cut silicon wafer Download PDFInfo
- Publication number
- CN111146085A CN111146085A CN201911405980.2A CN201911405980A CN111146085A CN 111146085 A CN111146085 A CN 111146085A CN 201911405980 A CN201911405980 A CN 201911405980A CN 111146085 A CN111146085 A CN 111146085A
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- China
- Prior art keywords
- silicon wafer
- texturing
- diamond wire
- reworking
- hno
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 17
- 239000010432 diamond Substances 0.000 title claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 9
- 239000003513 alkali Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000009501 film coating Methods 0.000 claims abstract description 4
- 239000007888 film coating Substances 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000012216 screening Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 238000009966 trimming Methods 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000000243 solution Substances 0.000 abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 239000011550 stock solution Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 22
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for texturing and reworking a diamond wire-cut silicon wafer, which comprises the steps of placing a silicon wafer with poor processing in an acid/alkali solution for multiple chemical reactions, performing secondary texturing on the reworked wafer, and sequentially performing diffusion, wet trimming, PSG removal, PECVD film coating, screen printing, sintering and screening on the silicon wafer to obtain a finished product. The method adjusts the texturing stock solution, can control the etching depth of the reworked silicon wafer to be about 0.35 mu m, and controls the surface reflectivity of the silicon wafer to be below 25 percent.
Description
Technical Field
The invention relates to the technical field of diamond wire cutting, in particular to a texturing reworking method for a diamond wire cut silicon wafer.
Background
The cutting modes of the polycrystalline silicon solar wafer mainly include two types: one is mortar cutting, namely, a steel wire is utilized to drive silicon carbide particles and silicon wafers in the mortar to act, and then cutting is carried out; the other is diamond wire cutting, namely, diamond particles are fixed in a nickel-based alloy layer on the surface of stainless steel by an electroplating method, and the wire saw and the diamond particles move together to cut. Compared with mortar cutting, the cutting technology of the fine steel stone wire saw has the advantages of high cutting speed, small environmental load, easy recovery of cutting sawdust and the like, and is the mainstream technology of the current silicon wafer cutting production. However, the existing acid texturing process has some problems for diamond wire-cut polycrystalline silicon wafers.
Disclosure of Invention
The invention aims to provide a texturing and reworking method for a diamond wire-cut silicon wafer, which can reduce the reflectivity of the reworked silicon wafer, improve the reworking yield and improve the conversion efficiency of the reworked silicon wafer.
In order to solve the technical problems, the invention adopts the following technical scheme: a method for texturing and reworking a diamond wire-cut silicon wafer comprises the steps of placing a silicon wafer with poor processing into an acid/alkali solution for multiple chemical reactions, texturing a reworked wafer for the second time, and sequentially carrying out diffusion, wet trimming, PSG removal, PECVD film coating, screen printing, sintering and screening on the silicon wafer to obtain a finished product.
Further, the acid/alkali solution is prepared from HF and HNO3、H2O and a texturing additive; the proportion of the texturing additive is 0.14 percent; the HF and HNO3、H2The mass ratio of O is as follows: HF: HNO3:H2O=1:4:2.2。
Further, the concentration of HF is 51 wt%.
Further, the HNO3The concentration of (3).
The invention has the beneficial effects that: the method adjusts the texturing stock solution, can control the etching depth of the reworked silicon wafer to be about 0.35 mu m, and controls the surface reflectivity of the silicon wafer to be below 25 percent, thereby ensuring the conversion efficiency and the yield of the reworked battery piece.
Detailed Description
The technical solution of the present invention will be clearly and completely described by the following detailed description.
Examples
The invention adopts diamond wire with the area of 156.75 mm multiplied by 156.75 mm to cut the polycrystalline silicon chip, and the texturing equipment adopts polycrystalline groove type equipment produced by centrothern company. The etching depth of normal texturing is 2.2 um, and the reflectivity is 22%.
The method for texturing and reworking the diamond wire-cut silicon wafer specifically comprises the following steps: and (4) placing the silicon wafer with poor processing procedure in an acid/alkali solution for carrying out chemical reaction for multiple times, and carrying out secondary texturing on the reworked wafer. The main components of the acid/alkali solution are as follows: HF (61wt%): HNO3(61wt%): H2O =1:4:2.2, the proportion of the texturing additive is 0.14%, and the reaction is carried out for 130s at room temperature to prepare the acid/alkali solution. And (4) performing secondary texturing on the reworked wafer, and then sequentially performing diffusion, wet trimming, PSG removal, PECVD film coating, screen printing, sintering and screening on the silicon wafer to obtain a finished product.
The method adjusts the texturing stock solution, can control the etching depth of the reworked silicon wafer to be about 0.35 mu m, and controls the surface reflectivity of the silicon wafer to be below 25 percent, thereby ensuring the conversion efficiency and the yield of the reworked battery piece.
The above-mentioned embodiments are merely descriptions of the preferred embodiments of the present invention, and do not limit the concept and scope of the present invention, and various modifications and improvements made to the technical solutions of the present invention by those skilled in the art should fall into the protection scope of the present invention without departing from the design concept of the present invention, and the technical contents of the present invention as claimed are all described in the technical claims.
Claims (4)
1. The texturing reworking method for the diamond wire cut silicon wafer is characterized by comprising the following steps: and placing the silicon wafer with poor processing procedure in an acid/alkali solution for carrying out chemical reaction for multiple times, carrying out secondary texturing on the reworked wafer, and then sequentially carrying out diffusion, wet trimming, PSG removal, PECVD film coating, screen printing, sintering and screening on the silicon wafer to obtain a finished product.
2. The method for texturing and reworking a diamond wire-cut silicon wafer according to claim 1, wherein the method comprises the following steps: the acid/alkali solution is prepared from HF and HNO3、H2O and a texturing additive; the proportion of the texturing additive is 0.14 percent; the HF and HNO3、H2The mass ratio of O is as follows: HF: HNO3:H2O=1:4:2.2。
3. The method for texturing and reworking a diamond wire-cut silicon wafer according to claim 1, wherein the method comprises the following steps: the concentration of HF is 51 wt%.
4. The method for texturing and reworking a diamond wire-cut silicon wafer according to claim 1, wherein the method comprises the following steps: the HNO3The concentration of (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911405980.2A CN111146085A (en) | 2019-12-31 | 2019-12-31 | Texturing reworking method for diamond wire cut silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911405980.2A CN111146085A (en) | 2019-12-31 | 2019-12-31 | Texturing reworking method for diamond wire cut silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111146085A true CN111146085A (en) | 2020-05-12 |
Family
ID=70522811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911405980.2A Withdrawn CN111146085A (en) | 2019-12-31 | 2019-12-31 | Texturing reworking method for diamond wire cut silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111146085A (en) |
-
2019
- 2019-12-31 CN CN201911405980.2A patent/CN111146085A/en not_active Withdrawn
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20200512 |
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| WW01 | Invention patent application withdrawn after publication |