CN111145817B - Method and device for shortening erasing time - Google Patents
Method and device for shortening erasing time Download PDFInfo
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- CN111145817B CN111145817B CN201911389699.4A CN201911389699A CN111145817B CN 111145817 B CN111145817 B CN 111145817B CN 201911389699 A CN201911389699 A CN 201911389699A CN 111145817 B CN111145817 B CN 111145817B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
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Abstract
The invention discloses a method and a device for shortening erasing time, wherein the method comprises the following steps: pre-programming a sector to be erased; determining a first type sector subjected to erasing interference, and carrying out strong programming on the first type sector; releasing an erasing pulse to erase the sector needing to be erased; counting the times of released erasing pulses after successfully erasing the sector needing to be erased; and when the times are less than or equal to a preset threshold value, finishing the erasing work. By the invention, when erasing is carried out, if a certain condition is met, the second strong programming is not carried out, and compared with the prior art, the total time required by erasing is greatly shortened.
Description
Technical Field
The present invention relates to the field of semiconductor memory technology, and more particularly, to a method and apparatus for shortening erase time.
Background
Currently, for non-volatile memories, the storage area is divided into a plurality of groups, each group comprising a plurality of sectors. When one or more sectors in a group are erased, the remaining sectors in the group may be subject to erase disturb, which may affect the read speed and data retention capability of the non-volatile memory, and in severe cases, may result in permanent loss of data in the non-volatile memory. In order to solve this problem, in the conventional erase algorithm, the erase disturb is eliminated by performing the strong programming process twice. But this approach results in a longer time required for the existing erase process.
Disclosure of Invention
The main object of the present invention is to solve the above technical problems in the prior art.
To achieve the above object, the present invention provides a method for shortening an erase time, the method comprising:
pre-programming a sector to be erased;
determining a first type sector subjected to erasing interference, and carrying out strong programming on the first type sector;
releasing an erasing pulse to erase the sector needing to be erased;
counting the times of released erasing pulses after successfully erasing the sector needing to be erased;
and when the times are less than or equal to a preset threshold value, finishing the erasing work.
Optionally, the determining the first type of sector subjected to the erasure interference includes:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
Optionally, the determining, from the group to which the sector needing to be erased belongs, a sector of which the threshold voltage is located in the first voltage range includes:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range;
if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range;
and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
Optionally, after counting the number of times of the released erase pulses after successfully erasing the sector to be erased, the method further includes:
and when the times are greater than a preset threshold value, determining a second type of sector subjected to erasing interference, and carrying out strong programming on the second type of sector.
Optionally, the determining the second type of sector subjected to the erase interference includes:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range;
if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range;
if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q;
and carrying out strong programming on the second type sector.
Further, to achieve the above object, the present invention also provides an apparatus for shortening an erasing time, the apparatus comprising:
the pre-programming module is used for pre-programming the sector needing to be erased;
the strong programming module is used for determining a first type sector subjected to erasing interference and carrying out strong programming on the first type sector;
the erasing module is used for releasing erasing pulses to erase the sector needing to be erased;
the counting module is used for counting the times of the released erasing pulse after successfully erasing the sector needing to be erased;
and the ending module is used for ending the erasing work when the times are less than or equal to a preset threshold value.
Optionally, the strong programming module is configured to:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
Optionally, the strong programming module is configured to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range;
if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range;
and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
Optionally, the strong programming module is configured to:
and when the times are greater than a preset threshold value, determining a second type of sector subjected to erasing interference, and carrying out strong programming on the second type of sector.
Optionally, the strong programming module is configured to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range;
if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range;
if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q;
and carrying out strong programming on the second type sector.
In the invention, the sector needing to be erased is pre-programmed; determining a first type sector subjected to erasing interference, and carrying out strong programming on the first type sector; releasing an erasing pulse to erase the sector needing to be erased; counting the times of released erasing pulses after successfully erasing the sector needing to be erased; and when the times are less than or equal to a preset threshold value, finishing the erasing work. By the invention, when erasing is carried out, if a certain condition is met, the second strong programming is not carried out, and compared with the prior art, the total time required by erasing is greatly shortened.
Drawings
Fig. 1 is a schematic flow chart of an erase process in the prior art.
FIG. 2 is a flowchart illustrating an embodiment of a method for reducing erase time according to the present invention;
FIG. 3 is a functional block diagram of an apparatus for reducing erase time according to an embodiment of the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
As shown in fig. 1, fig. 1 is a schematic flow chart of an erase process in the prior art.
In the prior art, in order to maintain the consistency of memory cells, a sector which needs to be erased currently is pre-programmed; then, all sectors in a group to which the sectors needing to be erased currently belong are subjected to strong programming, and the step is to avoid data loss caused by multiple times of power failure; then releasing the erasing pulse to realize the erasing purpose; after successful erase, performing soft programming with the goal of repairing over-erased memory cells; and finally, performing second strong programming to complete the erasing process, wherein due to the fact that the erasing process is performed on the sector needing to be erased, multiple erasing pulses may need to be released, for example, the chip is powered off for multiple times between the time A and the time B, so that erasing interference is caused on other sectors, and in order to eliminate the erasing interference, the second strong programming is performed.
If a group includes 4096 sectors, the time required to read one sector is 3us, then the time to read the entire group once is 4096 × 3us ≈ 12ms, and the time to read twice is 24 ms. If the erase condition is set improperly, assuming that the time for programming one sector is 20us, the time for strongly programming the entire set is 24ms +4096 × 20us ≈ 100ms, which greatly increases the time required for the erase process.
Even if the time required for programming a sector is not taken into account, when the user erases the current sector, the data of the remaining sectors is unknown, the whole group needs to be read 2 times, namely 24ms, and the time required for two times of strong programming is 48ms, which is why the time required for the current erasing process is more than 40ms, and the time is 60ms which is common at present.
In order to solve the technical problem of long erasing time caused by erasing interference in the prior art, the following provides various embodiments of the method for shortening erasing time according to the present invention. In the embodiment of the invention, the second strong programming step is omitted in an incentive way, so that the total time required for erasing is shortened.
Referring to fig. 2, fig. 2 is a flowchart illustrating an embodiment of a method for reducing an erase time according to the present invention. As shown in fig. 2, in one embodiment, the method for short erase time includes:
step S10, pre-programming the sector to be erased;
in this embodiment, if a group includes a plurality of sectors, wherein sector 1 is a sector to be erased, sector 1 is pre-programmed. If sectors 1 through 100 are sectors that need to be erased, sectors 1 through 100 are pre-programmed. That is, in this embodiment, the number of sectors to be erased may be one or more. The sectors that need to be erased are pre-programmed to maintain sector consistency.
Step S20, determining the first sector suffering from erasing interference, and carrying out strong programming on the first sector;
in the present embodiment, step S20 may be executed after step S10, and step S20 may be executed before step S10, and the steps are set as needed.
In this embodiment, it is necessary to determine the first type of sector subjected to the erase interference, and then perform the strong programming on the first type of sector.
Further, in an embodiment, the determining the first type of sector suffering from the erase interference includes:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
In this embodiment, if the sector that needs to be erased is sector 1, and the group of sector 1 includes sectors 1 to 4096, the sector whose threshold voltage is in the first voltage range is determined from sectors 1 to 4096, and the sector whose threshold voltage is in the first voltage range is determined to be the first-type sector that is subjected to the erase disturbance. The first voltage range is set according to actual conditions, and is set to 6.5V to 7.0V, for example. If one or more sectors are determined to have a threshold voltage between 6.5V and 7.0V from sector 1 to sector 4096, the one or more sectors are considered to be the first type of sector to be subjected to erase disturb.
Further, in an embodiment, the determining, from the group to which the sector requiring erasing belongs, a sector having a threshold voltage in a first voltage range includes:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range; if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range; and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
In this embodiment, if the sectors included in the group of sectors currently needing to be erased are sectors 1 to 4096, it is necessary to determine the sector whose threshold voltage is in the first voltage range from sector 1 to sector 4096. Determining whether the threshold voltage of a sector is within the first voltage range is essentially detecting whether there are pages (pages) within the sector whose threshold voltages are within the first voltage range, typically a sector comprising 16 pages. The lower limit of the first voltage range, e.g., 6.5V, is used to read pages in each sector. If the read result is "1" for a certain sector, the page in the sector is an erasing unit, and the influence of erasing interference does not need to be considered; if the read result is "0", the page in the sector is read again using the upper limit value of the first voltage range, for example, 7.0V, and if the read result is "1", it is described that the page in the sector is affected by the erase disturbance, the sector is considered to be a sector whose threshold voltage is in the first voltage range, that is, the sector is considered to be the first-class sector which is affected by the erase disturbance. Based on the mode, if the lower limit value of the first voltage range is used for respectively reading each sector in the group to which the sector needing to be erased belongs; if the value read by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range; if the read value of the M sectors is 1, the M sectors are determined as sectors with threshold voltages in a first voltage range, namely the M sectors are determined as first-class sectors subjected to erasing interference. Wherein N and M are positive integers, and N is more than or equal to M.
Step S30, releasing the erasing pulse to erase the sector needing to be erased;
in this embodiment, the erase pulse is released to erase the sector to be erased, so as to achieve the erase purpose. And different erasing modes are selected according to the number of sectors needing to be erased. For example, when the number of sectors to be erased is large, the corresponding erase pulse is released by the block erase method, and when the number of sectors to be erased is small, the corresponding erase pulse is released by the sector erase method. The number of sectors to be erased is considered to be large, and if the number of sectors to be erased is smaller than the value, the number of sectors to be erased is considered to be small. And after the erasing treatment is carried out on the sectors needing to be erased every time the erasing pulse is released, the sectors needing to be erased can be subjected to soft programming so as to repair the sectors which are erased. Of course, after the sectors needing to be erased are successfully erased, the sectors needing to be erased can be subjected to soft programming so as to repair the sectors which are erased.
Step S40, after successfully erasing the sector to be erased, counting the times of the released erasing pulse;
in this embodiment, after successfully erasing the sector to be erased, the number of times of the released erase pulse is counted. For example, 100 erase pulses need to be released to successfully erase the sector to be erased, and the counted number of released erase pulses is 100.
And step S50, when the times is less than or equal to the preset threshold value, finishing the erasing work.
In this embodiment, a preset threshold is set, and the size of the preset threshold is set according to an actual situation, which is not limited herein. When the counted number of times of the released erase pulse is less than or equal to the preset threshold, it is considered that no erase disturbance occurs at present, and therefore, the erase operation is directly ended. Compared with the prior art, the embodiment does not perform the second strong programming when certain conditions are met, and the total time required by erasing is greatly shortened.
Further, in an embodiment, after counting the number of times of the released erase pulses after successfully erasing the sector needing to be erased, the method further includes:
and when the times are greater than a preset threshold value, determining a second type of sector subjected to erasing interference, and carrying out strong programming on the second type of sector.
In this embodiment, when the counted number of times of the released erase pulses is less than or equal to the preset threshold, it indicates that there is likely erase interference currently, and therefore, the second type sector subjected to erase interference is determined, and the second type sector is strongly programmed to eliminate the erase interference.
Further, in an embodiment, the determining the second type of sector suffering from the erase disturbance includes:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range; if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range; if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q; and carrying out strong programming on the second type sector.
In this embodiment, the specific embodiment of determining the second type of sector subjected to the erase interference and performing the strong programming on the second type of sector is substantially the same as the embodiment of determining the first type of sector subjected to the erase interference, and thus the detailed description thereof is omitted here. The lower limit value and the upper limit value of the second voltage range are set according to actual needs, and may be set to be the same as the first voltage range or may be set to be different from the first voltage range.
In this embodiment, the sectors to be erased are pre-programmed; determining a first type sector subjected to erasing interference, and carrying out strong programming on the first type sector; releasing an erasing pulse to erase the sector needing to be erased; counting the times of released erasing pulses after successfully erasing the sector needing to be erased; and when the times are less than or equal to a preset threshold value, finishing the erasing work. Through the embodiment, when the erasing processing is carried out, if a certain condition is met, the second strong programming is not carried out, and compared with the prior art, the total time required by erasing is greatly shortened.
Referring to fig. 3, fig. 3 is a functional block diagram of an embodiment of the apparatus for shortening an erase time according to the present invention. In one embodiment, an apparatus for reducing erase time includes:
a pre-programming module 10, which is used for pre-programming the sector needing to be erased;
a strong programming module 20, configured to determine a first sector subjected to erase interference, and perform strong programming on the first sector;
the erasing module 30 is used for releasing an erasing pulse to erase the sector needing to be erased;
a counting module 40, configured to count the number of times of released erase pulses after the sector to be erased is successfully erased;
and a finishing module 50, configured to finish the erasing operation when the number of times is less than or equal to a preset threshold.
Further, in an embodiment, the strong programming module 20 is configured to:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
Further, in an embodiment, the strong programming module 20 is configured to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range;
if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range;
and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
Further, in an embodiment, the strong programming module 20 is configured to:
and when the times are greater than a preset threshold value, determining a second type of sector subjected to erasing interference, and carrying out strong programming on the second type of sector.
Further, in an embodiment, the strong programming module 20 is configured to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range;
if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range;
if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q;
and carrying out strong programming on the second type sector.
The specific embodiment of the apparatus for shortening an erase time of the present invention is substantially the same as the embodiments of the method for shortening an erase time, and will not be described herein again.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
The various component embodiments of the invention may be implemented in hardware, or in software modules running on one or more processors, or in a combination thereof. Those skilled in the art will appreciate that a microprocessor or Digital Signal Processor (DSP) may be used in practice to implement some or all of the functionality of some or all of the components in accordance with embodiments of the present invention. The present invention may also be embodied as apparatus or device programs (e.g., computer programs and computer program products) for performing a portion or all of the methods described herein. Such programs implementing the present invention may be stored on computer-readable media or may be in the form of one or more signals. Such a signal may be downloaded from an internet website or provided on a carrier signal or in any other form.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
Claims (8)
1. A method for reducing erase time, the method comprising:
pre-programming a sector to be erased;
determining a first type sector subjected to erasing interference, and carrying out strong programming on the first type sector;
releasing an erasing pulse to erase the sector needing to be erased;
counting the times of released erasing pulses after successfully erasing the sector needing to be erased;
and when the times is less than or equal to a preset threshold value, finishing the erasing work, and when the times is more than the preset threshold value, determining a second type sector subjected to erasing interference and carrying out strong programming on the second type sector.
2. The method of claim 1, wherein the determining the first type of sector that is subject to erasure interference comprises:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
3. The method of claim 2, wherein said determining a sector having a threshold voltage in a first voltage range from the group to which the sector requiring erase belongs comprises:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range;
if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range;
and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
4. The method of claim 1, wherein the determining of the second type of sector that is subject to erase interference, wherein the strong programming of the second type of sector comprises:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range;
if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range;
if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q;
and carrying out strong programming on the second type sector.
5. An apparatus for reducing an erase time, the apparatus comprising:
the pre-programming module is used for pre-programming the sector needing to be erased;
the strong programming module is used for determining a first type sector subjected to erasing interference and carrying out strong programming on the first type sector;
the erasing module is used for releasing erasing pulses to erase the sector needing to be erased;
the counting module is used for counting the times of the released erasing pulse after successfully erasing the sector needing to be erased;
the ending module is used for ending the erasing work when the times are less than or equal to a preset threshold value;
and the strong programming module is also used for determining a second type of sector subjected to erasing interference and carrying out strong programming on the second type of sector when the times are greater than a preset threshold value.
6. The apparatus of claim 5, wherein the strong programming module is to:
and determining the sector with the threshold voltage in the first voltage range from the group to which the sector needing to be erased belongs, wherein the sector with the threshold voltage in the first voltage range is the first type sector subjected to the erasing interference.
7. The apparatus of claim 6, wherein the strong programming module is to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the first voltage range;
if the value read out by the N sectors is 0, respectively reading the N sectors by using the upper limit value of the first voltage range;
and if the read value of the M sectors is 1, determining that the M sectors are sectors with threshold voltages in a first voltage range, wherein N and M are positive integers, and N is larger than or equal to M.
8. The apparatus of claim 5, wherein the strong programming module is to:
respectively reading each sector in the group to which the sector needing to be erased belongs by using the lower limit value of the second voltage range;
if the value read by the P sectors is 0, respectively reading the P sectors by using the upper limit value of the second voltage range;
if the read value of the Q sectors is 1, determining that the Q sectors are second-class sectors subjected to erasing interference, wherein P and Q are positive integers, and P is more than or equal to Q;
and carrying out strong programming on the second type sector.
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Address after: 518000 Room 101, building 10, Dayun software Town, 8288 Longgang Avenue, he'ao community, Yuanshan street, Longgang District, Shenzhen City, Guangdong Province Patentee after: XTX Technology Inc. Address before: 518000 19 / F, Xinghe World Building, Bantian street, Longgang District, Shenzhen City, Guangdong Province Patentee before: Paragon Technology (Shenzhen) Ltd. |