CN111129268A - LED packaging structure and packaging method - Google Patents
LED packaging structure and packaging method Download PDFInfo
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- CN111129268A CN111129268A CN201911388746.3A CN201911388746A CN111129268A CN 111129268 A CN111129268 A CN 111129268A CN 201911388746 A CN201911388746 A CN 201911388746A CN 111129268 A CN111129268 A CN 111129268A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000011265 semifinished product Substances 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- 239000000047 product Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED packaging structure and a packaging method, comprising the following steps: the LED light source comprises a support, an LED chip, a fluorescent layer and a shading layer; the LED chip is fixed on the bracket and used for generating light; the fluorescent layer covers the side face of the LED chip; the shading layer is arranged on the light emitting surface of the LED chip and used for blocking the light emitted by the LED chip from the light emitting surface. Because the top does not emit light, the problem of uneven top and side light emission does not exist, the problem that light mixing processing is difficult to occur easily when the light mixing distance of display products such as televisions, computer monitors or mobile phones is small is solved, the light mixing effect is effectively improved, and the display effect of the display products is further improved.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED packaging structure and a packaging method.
Background
As display products such as televisions, computer monitors, mobile phones, and the like are becoming thinner and thinner, the demand is becoming greater and greater, and thus the development of Light Emitting diodes (LEDs for short) is being promoted, wherein the packaging process of Chip Scale Package (CSP) LEDs is also being improved. At present, the mainstream chip scale package structure mainly includes the following three types:
the first type is a five-sided light emitting type CSP, namely, the periphery of the LED chip and the surface of the LED chip are used for emitting light;
the second type is a single-sided light emitting type CSP, i.e. only the surface of an LED chip is used for emitting light;
the third type is a white LED chip.
The top of the packaging structure is mostly used as a main light emitting surface in the current CSP structure, so that the top of the packaging structure has high brightness, which causes uneven brightness at the top of the packaging structure and at the side of the packaging structure.
Disclosure of Invention
In order to solve the technical problems, the invention provides an LED packaging structure and an LED packaging method.
In a first aspect, the present invention provides an LED package structure, including: the LED light source comprises a support, an LED chip, a fluorescent layer and a shading layer;
the LED chip is fixed on the bracket and used for generating light;
the fluorescent layer covers the side face of the LED chip;
the shading layer is arranged on the light emitting surface of the LED chip and used for blocking light emitted by the LED chip from the light emitting surface.
In one embodiment, the thickness of the fluorescent layer is 0 to 300 μm.
In one embodiment, the light shielding layer has a thickness of 10 μm to 500 μm.
In one embodiment, the LED chip includes: at least one of a blue chip, a green chip, a red chip and a white chip.
In one embodiment, the phosphor layer comprises: fluorescent material or quantum dot fluorescent layer.
In one embodiment, the light shielding layer includes: white glue, silica gel or epoxy resin.
In one embodiment, the fluorescent layer is further disposed between the light emitting surface of the LED chip and the light shielding layer.
In a second aspect, the present invention provides a method for packaging an LED, comprising:
fixing the LED chip on a bracket;
coating a fluorescent layer on the side surface of the LED chip;
coating a shading layer on the surface of the light emitting surface of the LED chip to obtain a semi-finished product of the LED packaging structure;
and baking and curing the semi-finished product of the LED packaging structure to form the LED packaging structure.
In one embodiment, the fixing the LED chip on the support includes: and fixing the LED chip on the bracket in a die bonding manner.
In one embodiment, between the step of applying the fluorescent layer to the side surface of the LED chip and the step of applying the light shielding layer to the surface of the light emitting surface of the LED chip, the method further includes: and coating the fluorescent layer on the surface of the light-emitting surface of the LED chip.
The invention provides an LED packaging structure and a packaging method, wherein a fluorescent layer is coated on the side surface of an LED chip, and a light-shielding layer is coated on the light-emitting surface of the LED chip, so that a chip-level packaging structure only emitting light from the side surface is formed. The LED lamp is used as a luminous light source and has the characteristics of side luminescence and non-luminescence at the top. Because the top does not emit light, the problem of uneven top and side light emission does not exist, the problem that light mixing processing is difficult to occur easily when the light mixing distance of display products such as televisions, computer displays or mobile phones is small is solved, the light mixing effect is effectively improved, and the display effect of the display products is further improved.
Further effects of the above-mentioned unconventional preferred modes will be described below in conjunction with specific embodiments.
Drawings
In order to more clearly illustrate the embodiments or prior art solutions of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and it is obvious for a person skilled in the art to obtain other drawings based on these drawings without paying creative efforts.
Fig. 1 is a schematic structural diagram of a chip scale package according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a chip scale package according to another embodiment of the invention;
fig. 3 is a flowchart of a packaging method of a chip scale package according to an embodiment of the invention.
Wherein, in the figures, the respective reference numerals:
1-an LED chip; 2-a fluorescent layer; and 3, shading layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail and completely with reference to the following embodiments and accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the present invention provides an embodiment of an LED package structure, which includes: the LED lamp comprises a support, an LED chip 1, a fluorescent layer 2 and a shading layer 3; the LED chip 1 is fixed on the bracket and used for generating light; the fluorescent layer 2 is coated on the side surface of the LED chip 1; the light shielding layer 3 is disposed on the light emitting surface of the LED chip 1 and is used for blocking the light emitted from the light emitting surface of the LED chip 1, so that an LED package unit with only side light emission can be formed. It should be noted that the bracket is not shown in the drawings. The LED lamp is used as a luminous light source and has the characteristics of side luminescence and non-luminescence at the top. Because the top does not emit light, the top and the side do not emit light unevenly, the problem that light mixing processing is difficult when the light mixing distance of display products such as televisions, computer monitors or mobile phones is small is solved, the display effect is improved, and the small light mixing distance can be realized under the condition that the light mixing distance is smaller than 5.
In one possible implementation, as shown in fig. 1, the LED chip 1 is fixed on the support for generating light, and the LED chip 1 needs to be fixed on the support for subsequent processing. The fluorescent layer 2 is coated on the side surface of the LED chip 1, and the thickness of the fluorescent layer 2 is between 0 and 300 mu m as the case may be. It should be noted that there is no gap between the fluorescent layer 2 and the LED chip 1, so that it can be ensured that there is no unevenness in the emitted light, and the yield of the product can be improved. The light shielding layer 3 is arranged on the light emitting surface of the LED chip 1 and used for blocking light emitted from the light emitting surface of the LED chip 1, and the light shielding layer 3 covers the LED chip 1 and the fluorescent layer 2 and is consistent with the edge. The specific thickness of the light shielding layer 3 is 10-500 μm, and there is no gap, otherwise there is a problem of light leakage.
In another possible implementation manner, as shown in fig. 2, the fluorescent layer 2 is further disposed between the light emitting surface of the LED chip 1 and the light shielding layer 3. Therefore, the area of the fluorescent layer 2 on the side surface of the LED chip 1 can be enlarged, and the light emitted by the LED chip 1 can be better utilized. Here, unlike fig. 1, fig. 1 merely provides the light shielding layer 3 on the side surface of the LED chip 1.
As shown in fig. 1, in the present embodiment, the LED chip 1 includes: at least one of a blue chip, a green chip, a red chip and a white chip.
In the above embodiments, the light emitting color is controlled by the wavelength of light, and different chips need to be selected according to the actual light emitting requirement. In addition, since white light needs to be emitted, the three primary colors of light, blue, green and red, are required to constitute white light, or a white chip is directly used.
As shown in fig. 1, in the present embodiment, the fluorescent layer 2 includes: phosphor materials or quantum dot materials.
In the embodiment, the fluorescent powder material has the characteristics of improving the luminous efficiency, accurately controlling the luminous wavelength of the LED, enabling the light color of the LED to be softer or more vivid and the like, and the luminous effect of the LED is guaranteed to a certain extent. The quantum dot material has the characteristics of narrow light-emitting spectrum, wide color gamut, good stability, long service life, low manufacturing cost and the like, and the two fluorescent layers 2 have respective advantages and can be used in different occasions.
As shown in fig. 1, in the present embodiment, the thickness range of the fluorescent layer 2 includes: 0-300 μm.
In the above embodiments, the thickness of the fluorescent layer 2 is 0 to 300 μm in order to ensure the luminous intensity of the chip scale package product. For example, the thickness of the fluorescent layer 2 may be 100 μm, 150 μm. If it exceeds 300. mu.m, the material cost increases. This range can satisfy most of the demands at the present stage.
As shown in fig. 1, in the present embodiment, the light shielding layer 3 includes: white glue, silica gel or epoxy resin.
In the embodiment, the white glue has the characteristics of good film forming property, high bonding strength, high curing speed, convenience in use, low price, no organic solvent and the like. The silica gel has the characteristics of strong tensile force, good hand feeling, high transparency, no odor, no yellowing, hard hardness, long service life and the like. The epoxy resin adhesive has the characteristics of good insulating property, good heat conductivity, high temperature resistance, low temperature resistance, aging resistance, good sealing property, simple filling process and the like. The three materials are respectively long, can adapt to different occasions and meet different requirements.
As shown in fig. 1, in the present embodiment, the thickness range of the light shielding layer 3 includes: 10-500 μm.
In the above embodiment, the light-shielding layer 3 having a thickness smaller than 10 μm has a problem that the light transmittance is slightly lowered. Larger than 500 μm increases the material cost. This range can satisfy most of the demands at the present stage.
As shown in fig. 2, in this embodiment, the fluorescent layer 2 is further disposed between the light emitting surface of the LED chip 1 and the light shielding layer 3.
In the above embodiment, the fluorescent layer 2 is disposed between the light-emitting surface of the LED chip 1 and the light-shielding layer 3, which is done to improve the utilization rate of light. Because the light on the front surface of the LED chip 1 is strongest, and the light shielding layer 3 blocks the light on the front surface of the LED chip 1, in order to improve the utilization rate of the light, fluorescent powder can be coated between the light-emitting surface of the LED chip 1 and the light shielding layer 3, so that the light can be utilized to the maximum, the light-emitting area of the LED packaging structure can be increased, and the wider use requirements can be met.
As shown in fig. 3, the present invention provides a specific embodiment of a chip scale package structure packaging method. The method in this embodiment is the packaging process of the chip scale package structure described in the embodiments shown in fig. 1 to 2. The description related to the above embodiment is also applicable to the present embodiment.
Step 31, fixing the LED chip 1 on a support;
step 32, coating the fluorescent layer 2 on the side surface of the LED chip 1;
step 33, coating a light shielding layer 3 on the surface of the light emitting surface of the LED chip 1 to obtain a semi-finished product of the LED packaging structure;
and step 34, baking and curing the semi-finished product of the LED packaging structure to form the LED packaging structure.
As shown in fig. 1, in this embodiment, the fixing the LED chip 1 on the support includes: the LED chip 1 is fixed on the bracket in a die bonding mode.
In the above embodiments, die bonding refers to a process of bonding a die to a designated area of a support via a glue to form a thermal or electrical path, which provides conditions for subsequent wire bonding. The die bonding has the characteristics of simpler process difficulty, colloid saving, high efficiency and the like, improves the production efficiency, reduces the colloid cost and reduces the production difficulty.
As shown in fig. 2, in the present embodiment, between the step of applying the fluorescent layer 2 to the side surface of the LED chip 1 and the step of applying the light shielding layer 3 to the surface of the light emitting surface of the LED chip 1, the method further includes: and coating the fluorescent layer 2 on the surface of the light-emitting surface of the LED chip 1.
In the above embodiment, the surface of the light emitting surface of the LED chip 1 is coated with the fluorescent layer 2, which operation is described above and will not be described repeatedly.
The embodiments of the present invention are described in a progressive manner, and the same and similar parts among the embodiments can be referred to each other, and each embodiment focuses on the differences from the other embodiments.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. An LED packaging structure is characterized by comprising a support, an LED chip, a fluorescent layer and a shading layer;
the LED chip is fixed on the bracket and used for generating light;
the fluorescent layer covers the side face of the LED chip;
the shading layer is arranged on the light emitting surface of the LED chip and used for blocking the light emitted by the LED chip from the light emitting surface.
2. The LED package structure of claim 1, wherein the thickness of the phosphor layer is 0-300 μm.
3. The LED package structure of claim 1, wherein the light shielding layer has a thickness of 10 μm to 500 μm.
4. The LED package structure of claim 1, wherein the LED chip comprises: at least one of a blue chip, a green chip, a red chip and a white chip.
5. The LED package structure of claim 1, wherein said phosphor layer comprises: fluorescent material or quantum dot fluorescent layer.
6. The LED package structure of claim 1, wherein the light shielding layer comprises: white glue, silica gel or epoxy resin.
7. The LED package structure according to any one of claims 1 to 6, wherein the fluorescent layer is further disposed between the light-emitting surface of the LED chip and the light-shielding layer.
8. An LED packaging method, comprising:
fixing the LED chip on a bracket;
coating a fluorescent layer on the side surface of the LED chip;
coating a shading layer on the surface of the light emitting surface of the LED chip to obtain a semi-finished product of the LED packaging structure;
and baking and curing the semi-finished product of the LED packaging structure to form the LED packaging structure.
9. The LED packaging method of claim 8, wherein said fixing the LED chip on the support comprises: and fixing the LED chip on the bracket in a die bonding manner.
10. The chip scale package structure packaging method according to claim 8, wherein between the step of applying a fluorescent layer to the side surface of the LED chip and the step of applying a light shielding layer to the surface of the light emitting surface of the LED chip, the method further comprises: and coating the fluorescent layer on the surface of the light-emitting surface of the LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911388746.3A CN111129268A (en) | 2019-12-30 | 2019-12-30 | LED packaging structure and packaging method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911388746.3A CN111129268A (en) | 2019-12-30 | 2019-12-30 | LED packaging structure and packaging method |
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| CN111129268A true CN111129268A (en) | 2020-05-08 |
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| CN201911388746.3A Pending CN111129268A (en) | 2019-12-30 | 2019-12-30 | LED packaging structure and packaging method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582514A (en) * | 2020-12-11 | 2021-03-30 | 东莞市中晶半导体科技有限公司 | LED chip, all-in-one chip, display module and display screen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104170104A (en) * | 2012-03-13 | 2014-11-26 | 欧司朗光电半导体有限公司 | Radiation-emitting semiconductor component, lighting device and display device |
| CN109904301A (en) * | 2017-12-11 | 2019-06-18 | 深圳市聚飞光电股份有限公司 | Wafer-level package multifaceted light-emitting LED and its packaging method, backlight module |
| CN212365987U (en) * | 2019-12-30 | 2021-01-15 | 北京易美新创科技有限公司 | LED packaging structure |
-
2019
- 2019-12-30 CN CN201911388746.3A patent/CN111129268A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104170104A (en) * | 2012-03-13 | 2014-11-26 | 欧司朗光电半导体有限公司 | Radiation-emitting semiconductor component, lighting device and display device |
| CN109904301A (en) * | 2017-12-11 | 2019-06-18 | 深圳市聚飞光电股份有限公司 | Wafer-level package multifaceted light-emitting LED and its packaging method, backlight module |
| CN212365987U (en) * | 2019-12-30 | 2021-01-15 | 北京易美新创科技有限公司 | LED packaging structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582514A (en) * | 2020-12-11 | 2021-03-30 | 东莞市中晶半导体科技有限公司 | LED chip, all-in-one chip, display module and display screen |
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