CN111129055A - Inner lens and manufacturing method thereof - Google Patents
Inner lens and manufacturing method thereof Download PDFInfo
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- CN111129055A CN111129055A CN201911354108.XA CN201911354108A CN111129055A CN 111129055 A CN111129055 A CN 111129055A CN 201911354108 A CN201911354108 A CN 201911354108A CN 111129055 A CN111129055 A CN 111129055A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 35
- 238000001039 wet etching Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 92
- 239000007789 gas Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
The invention discloses an inner lens and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a substrate, and forming an underlayer lens material layer on the substrate; forming a photoresist pattern on the lens material layer in the bottom layer; taking the photoresist pattern as a mask, and etching the lens material layer in the bottom layer to form a conical pattern below the photoresist pattern; removing the residual photoresist pattern material and cleaning; forming a lens material layer in the middle layer on the cone-shaped pattern in a covering mode; back-etching the lens material layer in the middle layer to form a side wall covering the cone pattern on the lens material layer in the middle layer; and covering and forming a top inner lens material layer on the cone-shaped graph covered with the side wall to form an inner lens structure. The invention has larger process window, can be realized by adopting a conventional semiconductor process method, and is easy to develop and control.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit manufacturing processes, in particular to an inner lens of a CMOS image sensor and a manufacturing method thereof.
Background
A CMOS Image Sensor (CIS), which is a typical solid-state imaging sensor, is composed of a pixel cell array, a row driver, a column driver, a timing control logic circuit, an AD converter, a data bus output interface, and a control interface. Compared with a Charge Coupled Device (CCD) sensor, the manufacturing process of the sensor is simple, the sensor can be well combined with the manufacture of an integrated circuit, other digital circuits can be integrated, and the sensor has the advantages of low cost, simple design, high integration level, low power consumption and the like, is more and more widely applied to the aspects of security monitoring, vehicle-mounted, spectrum observation and the like, and is more and more popular in the market.
The CMOS image sensor converts an optical signal into an electrical signal by a photodiode, and restores the electrical signal into an image by arithmetic processing. The resolution of an image sensor is related to the number of pixels on the chip, with the greater the number of pixels, the higher the resolution. After the manufacture of the pixel, the peripheral circuit and the like is finished, the manufacture of the micro lens and the color filter is continued in the pixel area. The micro-lens is mainly used for collecting the light received by the sensor so that the light can further reach the photodiode.
With the increasing demand of miniaturization of chip size and the increasing demand of pixel number, the pixel size is decreasing. And the reduction of the pixel size can greatly influence the sensitivity of the device. It is therefore important to efficiently concentrate the light inside the picture element.
The inner lens is another inner microlens formed by an integrated circuit manufacturing process above the pixel after the chip metal connecting line is finished and before the microlens is manufactured, and the inner lens is positioned below the microlens and can better gather incident light in the pixel.
Currently, only a few chips in the industry are capable of using designs with internal lenses. This is because it is very difficult to form a semi-circular arc structure in the semiconductor manufacturing process.
Referring to fig. 1 in combination with fig. 2 to 6, fig. 1 is a process flow diagram of a conventional inner lens manufacturing method, and fig. 2 to 6 are schematic process structures of inner lenses manufactured according to the method of fig. 1. As shown in fig. 1, the process flow of the conventional inner lens manufacturing method includes the following steps:
(1) depositing a layer of silicon nitride 11 on the surface of the silicon wafer 10 after the metal interconnection is completed, as shown in fig. 2;
(2) coating, exposing and developing the photoresist 12 to form an etching opening, as shown in fig. 3;
(3) forming the shape of the arc-shaped photoresist 12 through a photoresist reflow process, as shown in fig. 4;
(4) transferring the arc-shaped morphology of the photoresist 12 onto the silicon nitride 11 by dry etching, as shown in fig. 5;
(5) removing the photoresist and cleaning;
(6) a top layer of silicon nitride 13 is deposited to form the topography of the rounded inner lenses 13 and 11 as shown in figure 6.
The existing inner lens manufacturing method needs to adopt a special photoresist, forms a semicircular arc shape structure through treatment such as backflow after the photoresist is coated, and transfers the shape to a lower layer film through a dry etching process to form the inner lens. However, the process window of the process is small, so that the uniformity and stability of the appearance of the reflowed photoresist are difficult to control, and the process is not suitable for large-scale mass production at present.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and provides an inner lens and a method for manufacturing the same, so as to increase the focusing effect on incident light.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for manufacturing an inner lens comprises the following steps:
step S01: providing a substrate, and forming an underlayer lens material layer on the substrate;
step S02: forming a photoresist pattern on the lens material layer in the bottom layer;
step S03: taking the photoresist pattern as a mask, and etching the lens material layer in the bottom layer to form a conical pattern below the photoresist pattern;
step S04: removing the residual photoresist pattern material and cleaning;
step S05: forming a lens material layer in the middle layer on the cone-shaped pattern in a covering mode;
step S06: back-etching the lens material layer in the middle layer to form a side wall covering the cone pattern on the lens material layer in the middle layer;
step S07: and covering and forming a top inner lens material layer on the cone-shaped graph covered with the side wall to form an inner lens structure.
Further, in step S03, an isotropic wet etching process is used to etch the lens material layer in the bottom layer.
Further, in step S03, after the etching is performed on the lens material layer in the bottom layer, the over-etching is continuously performed on the lens material layer in the bottom layer.
Further, the over-etching time is at least 30% of the etching time.
Further, in step S05, a conformal gas pressure condition is used to deposit an interlayer lens material layer on the cone pattern.
Further, in step S06, the lens material layer in the intermediate layer is etched back by using an anisotropic dry etching process without providing a mask.
Further, in step S07, a top layer inner lens material layer is deposited under a conformal gas pressure condition to finish the shape of the cone pattern covered by the side wall, so as to form the arc-shaped inner lens.
Further, the bottom layer inner lens material, the middle layer inner lens material and the top layer inner lens material are silicon nitride, silicon oxide, silicon oxynitride or silicon carbide.
An inner lens, comprising:
an underlayer lens material layer which is a cone;
the lens material layer in the middle layer forms a side wall structure covering the side face of the cone;
and the top layer inner lens material layer covers the cone with the side wall, and has a circular arc-shaped surface appearance.
The invention has the advantages that the inner lens is formed by adopting the composite structure, the process window is larger when the inner lens is manufactured, and the conventional semiconductor process method is adopted, so that the method can be realized in the conventional semiconductor process, and is easy to develop and control.
Drawings
Fig. 1 is a process flow diagram of a conventional inner lens manufacturing method.
Fig. 2-6 are schematic views of the process structure for fabricating the inner lens according to the method of fig. 1.
FIG. 7 is a process flow diagram of a method for fabricating an inner lens according to the present invention.
FIGS. 8-14 are schematic views of the inner lens manufactured according to the method of FIG. 7 according to a preferred embodiment of the present invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, referring to fig. 7, fig. 7 is a process flow chart of a method for manufacturing an inner lens according to the present invention; referring to fig. 8-14, fig. 8-14 are schematic views illustrating a process structure for fabricating an inner lens according to the method of fig. 7 according to a preferred embodiment of the present invention. As shown in fig. 7, the method for manufacturing an inner lens of the present invention includes the following steps:
step S01: a substrate is provided on which an in-layer lens material layer is formed.
Please refer to fig. 8. The substrate 20 may be, for example, a silicon wafer substrate 20 after completing CMOS image sensor pixels, devices, and subsequent metal wiring, but is not limited thereto. Then, an under-layer lens material layer 21 for forming an inner lens is deposited on the substrate 20 on which the planarized metallic copper interconnect structure is formed.
The material of the lens material layer 21 in the bottom layer can adopt the conventional dielectric material in semiconductor manufacturing, such as silicon nitride, silicon oxide, silicon oxynitride or silicon carbide. The thickness of the lens material in the bottom layer can be 5000-15000 angstroms. The following description will be given by taking silicon nitride as an example of the inner lens material.
Step S02: and forming a photoresist pattern on the lens material layer in the bottom layer.
Please refer to fig. 9. Photoresist coating, exposure and development are performed on the surface of the underlying silicon nitride layer 21 to form a photoresist pattern 22 in the pixel region.
The photoresist thickness is related to the pixel size, and the larger the pixel size, the thicker the photoresist coating.
Step S03: and etching the lens material layer in the bottom layer by taking the photoresist pattern as a mask, so that the lens material layer in the bottom layer forms a conical pattern below the photoresist pattern.
Please refer to fig. 10. The underlying silicon nitride layer 21 may be etched using an isotropic wet etch process.
In the step, the phosphoric acid can be used for etching the bottom silicon nitride layer 21 film in the wet etching at the temperature of 150-170 ℃. Since the wet etching is isotropic etching, the bottom silicon nitride layer 21 in the lateral direction can be etched while the bottom silicon nitride layer 21 is etched in the longitudinal direction. The longer the contact time with the chemical solution, the more lateral etching occurs. Thus, a cavity 212 having an approximately inverted triangular sectional shape is formed at both sides below the opening between the photoresist patterns 22.
In order to ensure that the film of the bottom silicon nitride layer 21 is etched to the bottom and to ensure the angle of etching the side surface of the cone pattern 211 formed on both sides of the cavity 212, the over-etching time of the wet etching of the bottom silicon nitride layer 21 is at least 30%, i.e., the total etching time is at least 1.3 times the etching time calculated by the etching amount.
Due to the different picture element sizes, the width of the inner lens is also different. The longer the wet etching time, the deeper the lateral etching formed in the underlying silicon nitride layer 21, and the more inclined the profile of the side surface of the formed cone pattern 211, which is also more advantageous for the subsequent formation of the inner lens structure. However, if the ratio of the pixel size to the thickness of the underlying silicon nitride layer 21 is less than 3, the total wet etching time is not longer than 2 times of the etching time calculated according to the etching amount, otherwise the photoresist pattern 22 is likely to form floating photoresist due to too small contact area with the top of the underlying cone pattern 211, which leads to process failure.
Step S04: and removing the residual photoresist pattern material and cleaning.
Please refer to fig. 11. After the wet etching process is completed, the substrate 20 having the device structure may be subjected to photoresist removal and cleaning by a conventional process.
Step S05: and forming a lens material layer in the intermediate layer on the cone pattern in a covering manner.
Please refer to fig. 12. An intermediate silicon nitride layer 23 is deposited on the surface of the cone pattern 211 of the underlying silicon nitride layer 21 as an intermediate inner lens material layer 23.
In this step, the deposited thickness of the intermediate silicon nitride layer 23 is thin and needs to have good conformality, so as to ensure the inclined profile of the side surface of the cone pattern 211 formed by wet etching.
If the ratio of the pixel size to the thickness of the bottom silicon nitride layer 21 is less than 3, the side surface of the formed cone-shaped pattern 211 is not inclined enough due to the limitation of wet etching time; if the ratio of the pixel size to the thickness of the underlying silicon nitride layer 21 is greater than 6, the wet-process liquid medicine is difficult to enter the side face structure too deep due to the too large pixel size. Therefore, in these two cases, the middle silicon nitride layer 23 needs to be added, and the subsequent dry etching is used to form the sidewall, so as to trim the top corners of the top of the cone pattern 211 more smoothly.
Taking the silicon nitride inner lens material as an example, a method adopting plasma enhanced chemical vapor deposition PECVDThe silicon nitride is deposited in a thickness of 5000-15000 angstroms, and the gas participating in the reaction is Silane (SiH)4) And ammonia (NH)3) The temperature of the cavity is 350-500 ℃, and the reactive DC power is 350-600W.
Step S06: and carrying out back etching on the lens material layer in the middle layer to form a side wall covering the cone pattern on the lens material layer in the middle layer.
Please refer to fig. 13. The mask-less etching can be performed by a dry etching process. The dry etching is composed of anisotropic physical bombardment and isotropic chemical reaction, and the middle silicon nitride layer 23 forms a side wall 231 structure by adjusting parameters such as the proportional pressure of etching gas and the like, and is attached to the cone pattern 211 structure of the bottom silicon nitride layer 21. However, since the bottom silicon nitride layer 21 has already formed a relatively inclined topography structure by wet etching, the overall topography of the cone pattern 211 and the sidewall 231 thereof can be trimmed relatively smoothly and roundly finally by the combined action of the wet etching and the dry etching.
Taking etching of silicon nitride as an example, CHF is adopted as main etching gas for dry etching3/O2The combination has a pressure of 5-15 Pa, a flow rate of the reaction gas of 25-55 sccm, and a power of 150-250W.
Step S07: and covering and forming a top inner lens material layer on the cone-shaped graph covered with the side wall to form an inner lens structure.
Please refer to fig. 14. Finally, a top silicon nitride layer 24 is deposited on the surface of the cone pattern 211 and the sidewall 231 as the top inner lens material layer 24.
In this step, during deposition of the top silicon nitride layer 24, a gas pressure condition with moderate conformality (good step coverage) can be adopted, so that after the top silicon nitride layer 24 is deposited, the shape of the cone-shaped pattern 211 covered with the side wall 231 can be arranged to be smoother and more smooth, thereby forming the inner lenses 24, 231 and 211 with arc-shaped shapes.
Taking a silicon nitride inner lens material as an example, the silicon nitride inner lens material is deposited by adopting a plasma enhanced chemical vapor deposition PECVD mode, and the thickness of the silicon nitride is 5000-15000 angstroms, the gas participating in the reaction is Silane (SiH)4) And ammonia (NH)3) The temperature of the cavity is 350-500 ℃, and the reactive DC power is 350-600W.
In the following embodiments of the present invention, referring to fig. 14, the present invention provides an inner lens 24, 231 and 211 structure, comprising: a composite inner lens 24, 231 and 211 structure consisting of a bottom inner lens material layer 211 positioned at a lower level, an intermediate inner lens material layer 231 positioned in the middle, and a top inner lens material layer 24 positioned at an upper level of the bottom inner lens material layer 211 and the intermediate inner lens material layer 231.
Wherein the bottom layer lens material layer 211 is a cone. The intermediate layer lens material layer 231 covers the sides of the cone forming a sidewall structure on the sides of the cone of the bottom layer lens material layer 211. The top inner lens material layer 24 covers the cone of the bottom inner lens material layer 211 with the sidewall structure of the middle inner lens material layer 231, and the top inner lens material layer 24 has a circular arc-shaped surface topography.
The inner lens 24, 231 and 211 structures of the present invention can be disposed on a silicon substrate 20 after, for example, CMOS image sensor pixels, devices and subsequent metal wiring fabrication are completed.
The inner lens 24, 231 and 211 structures of the present invention can be formed using one of the inner lens fabrication methods described above.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method for manufacturing an inner lens is characterized by comprising the following steps:
step S01: providing a substrate, and forming an underlayer lens material layer on the substrate;
step S02: forming a photoresist pattern on the lens material layer in the bottom layer;
step S03: taking the photoresist pattern as a mask, and etching the lens material layer in the bottom layer to form a conical pattern below the photoresist pattern;
step S04: removing the residual photoresist pattern material and cleaning;
step S05: forming a lens material layer in the middle layer on the cone-shaped pattern in a covering mode;
step S06: back-etching the lens material layer in the middle layer to form a side wall covering the cone pattern on the lens material layer in the middle layer;
step S07: and covering and forming a top inner lens material layer on the cone-shaped graph covered with the side wall to form an inner lens structure.
2. The method for manufacturing an inner lens as claimed in claim 1, wherein in step S03, the lens material layer in the bottom layer is etched by an isotropic wet etching process.
3. A method for manufacturing an inner lens according to claim 1 or 2, wherein in step S03, after the etching is performed on the lens material layer in the bottom layer, the over-etching is continued on the lens material layer in the bottom layer.
4. A method of fabricating an inner lens according to claim 3, wherein the over-etching time is at least 30% of the etching time.
5. The method for fabricating an inner lens as claimed in claim 1, wherein in step S05, a conformal gas pressure condition is used to deposit an intermediate lens material layer on the cone pattern.
6. The method for manufacturing an inner lens as claimed in claim 1, wherein in step S06, the intermediate lens material layer is etched back by an anisotropic dry etching process without a mask.
7. The method of claim 1, wherein in step S07, the top lens material layer is deposited using conformal gas pressure conditions.
8. The method of claim 1, wherein the bottom layer lens material, the middle layer lens material, and the top layer lens material are silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide.
9. An inner lens, comprising:
an underlayer lens material layer which is a cone;
the lens material layer in the middle layer forms a side wall structure covering the side face of the cone;
and the top layer inner lens material layer covers the cone with the side wall, and has a circular arc-shaped surface appearance.
10. The inner lens of claim 9, wherein the bottom, middle and top inner lens materials are silicon nitride, silicon oxide, silicon oxynitride or silicon carbide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911354108.XA CN111129055A (en) | 2019-12-25 | 2019-12-25 | Inner lens and manufacturing method thereof |
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| CN201911354108.XA CN111129055A (en) | 2019-12-25 | 2019-12-25 | Inner lens and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335533A (en) * | 1992-05-27 | 1993-12-17 | Olympus Optical Co Ltd | Method of manufacturing solid-state imaging device |
| KR20030001071A (en) * | 2001-06-28 | 2003-01-06 | 주식회사 하이닉스반도체 | Image sensor |
| JP2003204050A (en) * | 2002-01-08 | 2003-07-18 | Canon Inc | Solid state imaging device |
| US20080135897A1 (en) * | 2006-12-08 | 2008-06-12 | Semiconductor Manufacturing International (Shanghai) Corporation | method and system for image sensor and lens on a silicon back plane wafer |
| US20090160000A1 (en) * | 2007-12-24 | 2009-06-25 | Dae-Young Kim | Image sensor and method for manufacturing the sensor |
-
2019
- 2019-12-25 CN CN201911354108.XA patent/CN111129055A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335533A (en) * | 1992-05-27 | 1993-12-17 | Olympus Optical Co Ltd | Method of manufacturing solid-state imaging device |
| KR20030001071A (en) * | 2001-06-28 | 2003-01-06 | 주식회사 하이닉스반도체 | Image sensor |
| JP2003204050A (en) * | 2002-01-08 | 2003-07-18 | Canon Inc | Solid state imaging device |
| US20080135897A1 (en) * | 2006-12-08 | 2008-06-12 | Semiconductor Manufacturing International (Shanghai) Corporation | method and system for image sensor and lens on a silicon back plane wafer |
| US20090160000A1 (en) * | 2007-12-24 | 2009-06-25 | Dae-Young Kim | Image sensor and method for manufacturing the sensor |
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