CN111142176A - Inner lens and method of making the same - Google Patents
Inner lens and method of making the same Download PDFInfo
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- CN111142176A CN111142176A CN201911355336.9A CN201911355336A CN111142176A CN 111142176 A CN111142176 A CN 111142176A CN 201911355336 A CN201911355336 A CN 201911355336A CN 111142176 A CN111142176 A CN 111142176A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 74
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 238000001312 dry etching Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000003292 glue Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0031—Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本发明公开了一种内透镜及制作方法，制作方法包括以下步骤：在衬底上形成底层内透镜材料层；在底层内透镜材料层上形成光刻胶图形层；以光刻胶图形层为掩模，对底层内透镜材料层进行部分刻蚀，在底层内透镜材料层上形成第一个台阶层；对光刻胶图形层侧壁进行回刻，使第一个台阶层由光刻胶图形层的两侧部分露出；重复前述刻蚀步骤，在底层内透镜材料层上形成多个台阶层，使底层内透镜材料层具有台阶状的表面形貌；去胶清洗；在底层内透镜材料层上覆盖形成顶层内透镜材料层，形成内透镜结构。本发明工艺窗口较大，可采用常规半导体工艺方法实现，易于开发和管控。
The invention discloses an inner lens and a manufacturing method. The manufacturing method comprises the following steps: forming a bottom inner lens material layer on a substrate; forming a photoresist pattern layer on the bottom inner lens material layer; using the photoresist pattern layer as a mask, partially etch the inner lens material layer of the bottom layer, and form the first step layer on the inner lens material layer of the bottom layer; etch back the side wall of the photoresist pattern layer, so that the first step layer is made of photoresist Parts of both sides of the pattern layer are exposed; the foregoing etching steps are repeated to form a plurality of stepped layers on the inner lens material layer of the bottom layer, so that the inner lens material layer of the bottom layer has a stepped surface morphology; glue removal and cleaning; A top inner lens material layer is formed overlying the layer to form an inner lens structure. The invention has a larger process window, can be realized by conventional semiconductor process methods, and is easy to develop and control.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit manufacturing processes, in particular to an inner lens of a CMOS image sensor and a manufacturing method thereof.
Background
A CMOS Image Sensor (CIS), which is a typical solid-state imaging sensor, is composed of a pixel cell array, a row driver, a column driver, a timing control logic circuit, an AD converter, a data bus output interface, and a control interface. Compared with a Charge Coupled Device (CCD) sensor, the manufacturing process of the sensor is simple, the sensor can be well combined with the manufacture of an integrated circuit, other digital circuits can be integrated, and the sensor has the advantages of low cost, simple design, high integration level, low power consumption and the like, is more and more widely applied to the aspects of security monitoring, vehicle-mounted, spectrum observation and the like, and is more and more popular in the market.
The CMOS image sensor converts an optical signal into an electrical signal by a photodiode, and restores the electrical signal into an image by arithmetic processing. The resolution of an image sensor is related to the number of pixels on the chip, with the greater the number of pixels, the higher the resolution. After the manufacture of the pixel, the peripheral circuit and the like is finished, the manufacture of the micro lens and the color filter is continued in the pixel area. The micro-lens is mainly used for collecting the light received by the sensor so that the light can further reach the photodiode.
With the increasing demand of miniaturization of chip size and the increasing demand of pixel number, the pixel size is decreasing. And the reduction of the pixel size can greatly influence the sensitivity of the device. It is therefore important to efficiently concentrate the light inside the picture element.
The inner lens is another inner microlens formed by an integrated circuit manufacturing process above the pixel after the chip metal connecting line is finished and before the microlens is manufactured, and the inner lens is positioned below the microlens and can better gather incident light in the pixel.
Currently, only a few chips in the industry are capable of using designs with internal lenses. This is because it is very difficult to form a semi-circular arc structure in the semiconductor manufacturing process.
Referring to fig. 1 in combination with fig. 2 to 6, fig. 1 is a process flow diagram of a conventional inner lens manufacturing method, and fig. 2 to 6 are schematic process structures of inner lenses manufactured according to the method of fig. 1. As shown in fig. 1, the process flow of the conventional inner lens manufacturing method includes the following steps:
(1) depositing a layer of silicon nitride 11 on the surface of the silicon wafer 10 after the metal interconnection is completed, as shown in fig. 2;
(2) coating, exposing and developing the photoresist 12 to form an etching opening, as shown in fig. 3;
(3) forming the shape of the arc-shaped photoresist 12 through a photoresist reflow process, as shown in fig. 4;
(4) transferring the arc-shaped morphology of the photoresist 12 onto the silicon nitride 11 by dry etching, as shown in fig. 5;
(5) removing the photoresist and cleaning;
(6) a top layer of silicon nitride 13 is deposited to form the topography of the rounded inner lenses 13 and 11 as shown in figure 6.
The existing inner lens manufacturing method needs to adopt a special photoresist, forms a semicircular arc shape structure through treatment such as backflow after the photoresist is coated, and transfers the shape to a lower layer film through a dry etching process to form the inner lens. However, the process window of the process is small, so that the uniformity and stability of the appearance of the reflowed photoresist are difficult to control, and the process is not suitable for large-scale mass production at present.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and provides an inner lens and a method for manufacturing the same, so as to increase the focusing effect on incident light.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for manufacturing an inner lens comprises the following steps:
step S01: providing a substrate, and forming an underlayer lens material layer on the substrate;
step S02: forming a photoresist pattern layer on the lens material layer in the bottom layer;
step S03: taking the photoresist pattern layer as a mask, partially etching the lens material layer in the bottom layer, and forming a first step layer on the lens material layer in the bottom layer;
step S04: etching back the side wall of the photoresist pattern layer to expose the first step layer from the two side parts of the photoresist pattern layer;
step S05: repeating the steps S03 to S04, and forming a plurality of step levels on the lens material layer in the bottom layer to make the lens material layer in the bottom layer have a step-shaped surface appearance;
step S06: removing the residual photoresist pattern layer material and cleaning;
step S07: and forming a top inner lens material layer on the bottom inner lens material layer in a covering manner to form an inner lens structure.
Further, in step S03, an anisotropic dry etching process is used to partially etch the lens material layer in the bottom layer.
Further, in step S03, in step S03, the etching thickness when the lens material layer in the bottom layer is partially etched is the total thickness of the lens material layer in the bottom layer divided by the number of step layers.
Further, in step S04, an isotropic dry etching process is used to etch back the sidewalls of the photoresist pattern layer.
Further, in step S04, in step S04, the etching back thickness of the sidewall of the photoresist pattern layer during etching back is the total thickness of the photoresist pattern layer divided by the number of step layers.
Further, the dry etching process is a dry plasma etching process.
Further, the number of the step layers is not less than 3.
Further, in step S07, a top inner lens material layer is deposited on the bottom inner lens material layer under a conformal gas pressure condition to eliminate step-like corners on the surface of the bottom inner lens material layer, so as to form a circular arc-shaped inner lens shape.
Further, the bottom layer inner lens material and the top layer inner lens material are silicon nitride, silicon oxide, silicon oxynitride or silicon carbide.
Further, the total thickness of the photoresist pattern layer is 10000-50000 angstroms.
An inner lens, comprising:
the lens material layer in the bottom layer is provided with a plurality of step layers, and the width of each step layer is sequentially increased from top to bottom so that the lens material layer in the bottom layer has a step-shaped surface appearance;
and the top layer inner lens material layer covers the step layer and has a circular arc-shaped surface appearance.
The invention has the advantages that the inner lens is formed by adopting the composite structure, the process window is larger when the inner lens is manufactured, and the conventional semiconductor process method is adopted, so that the method can be realized in the conventional semiconductor process, and is easy to develop and control.
Drawings
Fig. 1 is a process flow diagram of a conventional inner lens manufacturing method.
Fig. 2-6 are schematic views of the process structure for fabricating the inner lens according to the method of fig. 1.
FIG. 7 is a process flow diagram of a method for fabricating an inner lens according to the present invention.
FIGS. 8-16 are schematic views of the inner lens manufactured according to the method of FIG. 7 according to a preferred embodiment of the present invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, referring to fig. 7, fig. 7 is a process flow chart of a method for manufacturing an inner lens according to the present invention; referring to fig. 8-16, fig. 8-16 are schematic views illustrating a process structure for fabricating an inner lens according to the method of fig. 7 according to a preferred embodiment of the present invention. As shown in fig. 7, the method for manufacturing an inner lens of the present invention includes the following steps:
step S01: a substrate is provided, and an underlying lens material layer is formed on the substrate.
Please refer to fig. 8. The substrate 20 may be, for example, a silicon wafer substrate 20 after completing CMOS image sensor pixels, devices, and subsequent metal wiring, but is not limited thereto. Then, an under-layer lens material layer 21 for forming an inner lens is deposited on the substrate 20 on which the planarized metallic copper interconnect structure is formed.
The material of the lens material layer 21 in the bottom layer can adopt the conventional dielectric material in semiconductor manufacturing, such as silicon nitride, silicon oxide, silicon oxynitride or silicon carbide. The thickness of the lens material in the bottom layer can be 5000-15000A. The following description will be given by taking silicon nitride as an example of the material of the under-layer lens material layer 21.
Step S02: a photoresist pattern layer is formed on the lens material layer in the underlayer.
Please refer to fig. 9. Photoresist coating, exposure and development are performed on the surface of the underlying silicon nitride layer 21 to form a photoresist pattern layer 22 in the pixel region.
In the photoresist coating, the total thickness of the photoresist can be controlled within 10000-50000 angstroms. The photoresist thickness is related to the pixel size, and the larger the pixel size, the thicker the photoresist coating.
Step S03: and taking the photoresist pattern layer as a mask, partially etching the lens material layer in the bottom layer, and forming a first step layer on the lens material layer in the bottom layer.
Please refer to fig. 10. Next, by an etching process, the bottom silicon nitride layer 21 is etched longitudinally to remove a part of the bottom silicon nitride layer 21 film.
The etching process may employ a dry plasma etching process. Dry etching is controlled by both physical bombardment and chemical reactions. Wherein, the physical bombardment can realize the anisotropic etching, namely only the film material in the bombardment direction is etched; and the chemical reaction may achieve isotropic etching, i.e., the surfaces in contact with the process gas will be reacted and etched.
In the dry plasma etching in this step, physical bombardment is mainly used to etch the film of the bottom silicon nitride layer 21, and a first step layer 211 is formed on the surface of the bottom silicon nitride layer 21.
The etching thickness can be controlled according to time, the etching thickness is related to the designed number of steps, and the single silicon nitride etching thickness can be about the thickness value of the total thickness of the bottom silicon nitride layer 21 divided by the number of the steps.
For example, CHF can be used as the main etching gas for dry etching to etch silicon nitride3/O2The combination has a pressure of 5-15 Pa, a flow rate of the reaction gas of 25-55 sccm, and a power of 150-250W.
Step S04: and back-etching the side wall of the photoresist pattern layer to expose the first step layer from the two side parts of the photoresist pattern layer.
Please refer to fig. 11. Then, the side of the photoresist pattern layer 22 is etched back by the reaction of the dry etching gas with the photoresist, so that the topography of the photoresist pattern layer 22 is retracted. At this time, the thickness of the photoresist pattern layer 22 may also be reduced due to chemical reaction control.
The dry etching in this step is mainly based on a chemical reaction of etching the photoresist, and the etching gas in this step has no etching capability on the underlying silicon nitride layer 21, and only the photoresist pattern layer 22 is trimmed, so that the first step layer 211 below the photoresist pattern layer 22 is exposed from both side portions of the photoresist pattern layer 22.
When the side surface of the photoresist pattern layer 22 is etched back, the etching amount of the photoresist is related to the number of designed steps, and the single-side etching thickness of the photoresist can be smaller than or equal to the thickness value obtained by dividing the total thickness of the photoresist pattern layer 22 by the number of steps.
The dry etching of the step can adopt O2The etching gas is used as the main etching gas, the temperature is 150-250 ℃, the pressure is 1-5 mTorr, and the gas flow is 2-10 sccm.
Step S05: repeating the steps S03 to S04, and forming a plurality of step levels on the lens material layer in the bottom layer to make the lens material layer in the bottom layer have a step-like surface appearance.
Please refer to fig. 12-15. Next, as in step S03, a vertical etching process is performed, so that the second step layer 212 is formed under the first step layer 211. Then, in step S04, the remaining side surface of the photoresist pattern layer 22 is etched back, and a third step layer 213 is formed below the second step layer 212. Repeating the above steps for several times to finally form multiple steps on the surface of the bottom silicon nitride layer 21, so that the bottom silicon nitride layer 21 forms a step-shaped surface.
In the step, the number of times of repeatedly carrying out the silicon nitride longitudinal etching and the photoresist back etching is usually not less than 3, so that the number of the formed steps is not less than 3, otherwise, a smooth appearance is not easy to form during the subsequent deposition of the top silicon nitride layer. The more the steps are, the closer the shape of the finally formed inner lens is to the circular arc.
Step S06: and removing the residual photoresist pattern layer material and cleaning.
After the etching process is completed, the substrate 20 having the device structure may be subjected to photoresist stripping and cleaning by a conventional process.
Step S07: and forming an inner lens material layer in the top layer on the lens material layer in the bottom layer in a covering mode to form an inner lens structure.
Please refer to fig. 16. Finally, a top silicon nitride layer 23 is deposited over the bottom silicon nitride layer 21 as a top lens material layer 23. At this time, since the bottom silicon nitride layer 21 film is step-shaped, the top silicon nitride layer 23 can be deposited while maintaining the bottom film profile at a certain degree, so as to finally form an approximately arc-shaped surface profile, i.e. the required profile of the inner lenses 23 and 21.
In this step, when depositing the top silicon nitride layer 23, a gas pressure condition with moderate conformality (good step coverage) can be adopted, so that after the top silicon nitride layer 23 is deposited, the edge of the step on the surface of the bottom silicon nitride layer 21 can be eliminated, and the shape and structure of the arc-shaped inner lenses 23 and 21 can be formed.
Taking silicon nitride as an example, adoptDepositing by Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein the thickness of silicon nitride is 5000-15000 angstroms, and the gas participating in the reaction is Silane (SiH)4) And ammonia (NH)3) The temperature of the cavity is 350-500 ℃, and the reactive DC power is 350-600W.
In the following embodiments of the present invention, referring to fig. 16, the present invention provides an inner lens 21 and 23 structure, which includes: a composite inner lens 21 and 23 structure composed of a bottom inner lens material layer 21 positioned at a lower layer and a top inner lens material layer 23 positioned at an upper layer of the bottom inner lens material layer 21. The lens material layer 21 in the bottom layer has a plurality of step layers, and the widths of the step layers are sequentially increased from top to bottom, so that the lens material layer 21 in the bottom layer has a step-shaped surface appearance. The top inner lens material layer 23 covers the step layer, and the top inner lens material layer 23 has a surface topography of a circular arc. The inner lens 21 and 23 structures of the present invention can be disposed on a silicon substrate 20 after, for example, CMOS image sensor pixels, devices, and subsequent metal wiring are fabricated.
The inner lens structures 21 and 23 of the present invention can be formed using one of the inner lens forming methods described above.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
Claims (14)
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| CN201911355336.9A CN111142176A (en) | 2019-12-25 | 2019-12-25 | Inner lens and method of making the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635513A (en) * | 2020-12-30 | 2021-04-09 | 湖畔光电科技（江苏）有限公司 | Silicon-based OLED Micro display screen and manufacturing method of Micro Lens applied to display screen |
| CN113611715A (en) * | 2021-07-05 | 2021-11-05 | 中科微机电技术（北京）有限公司 | Polarized light image sensor and manufacturing method thereof |
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| CN1819243A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | Image sensor with inner lens |
| CN1819143A (en) * | 2004-12-28 | 2006-08-16 | 东部亚南半导体株式会社 | Method for fabricating CMOS image sensor |
| CN107275356A (en) * | 2017-06-27 | 2017-10-20 | 上海集成电路研发中心有限公司 | A kind of manufacture method of sensor lenticule |
| CN109524427A (en) * | 2018-10-26 | 2019-03-26 | 上海华力集成电路制造有限公司 | The manufacturing method of the interior lens of CIS |
| US20190215474A1 (en) * | 2016-09-14 | 2019-07-11 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, imaging apparatus, and method of manufacturing solid-state imaging device |
-
2019
- 2019-12-25 CN CN201911355336.9A patent/CN111142176A/en active Pending
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| CN1819143A (en) * | 2004-12-28 | 2006-08-16 | 东部亚南半导体株式会社 | Method for fabricating CMOS image sensor |
| CN1819243A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | Image sensor with inner lens |
| US20190215474A1 (en) * | 2016-09-14 | 2019-07-11 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, imaging apparatus, and method of manufacturing solid-state imaging device |
| CN107275356A (en) * | 2017-06-27 | 2017-10-20 | 上海集成电路研发中心有限公司 | A kind of manufacture method of sensor lenticule |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112635513A (en) * | 2020-12-30 | 2021-04-09 | 湖畔光电科技（江苏）有限公司 | Silicon-based OLED Micro display screen and manufacturing method of Micro Lens applied to display screen |
| CN113611715A (en) * | 2021-07-05 | 2021-11-05 | 中科微机电技术（北京）有限公司 | Polarized light image sensor and manufacturing method thereof |
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Application publication date: 20200512 |