CN111128921A - Sensor packaging structure - Google Patents
Sensor packaging structure Download PDFInfo
- Publication number
- CN111128921A CN111128921A CN202010017401.3A CN202010017401A CN111128921A CN 111128921 A CN111128921 A CN 111128921A CN 202010017401 A CN202010017401 A CN 202010017401A CN 111128921 A CN111128921 A CN 111128921A
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- Prior art keywords
- chip
- base
- package structure
- carrier
- sensor package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a sensor packaging structure, which relates to the technical field of sensors and comprises a chip, a base and a stress buffer layer, wherein the base is provided with an accommodating cavity, the chip is arranged in the accommodating cavity, one side of the chip is supported on the base, and the other side of the chip is used for measuring and taking pressure; the stress buffer layer is arranged between the base and the chip and fixedly connected with the base and the chip respectively, and is used for buffering the stress transmitted to the chip by the base. The chip is connected with the base through the stress buffer layer, the stress buffer layer can reduce the influence of stress generated by the base when the temperature changes on the chip, so that the output signal of the chip is stable, the measurement error can be reduced, and the measurement precision is improved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a sensor packaging structure.
Background
The use of pressure sensors is now widespread in a variety of automotive, aerospace, commercial and industrial applications, which are commonly used to detect pressure changes. The core of the pressure sensor is a pressure chip, and the packaging technology of the chip is a main factor influencing the accuracy of the pressure sensor. Chip direct mount is on the base among the chip package structure of prior art, and the base can produce stress taking place temperature variation, and this stress very easily produces the influence to the chip, causes signal output unstable to reduce the measurement accuracy of sensor, especially to high accuracy silicon pressure sensor, can lead to it to not reach the operation requirement of high accuracy far away.
Disclosure of Invention
The invention aims to provide a sensor packaging structure which can reduce the influence of stress generated by a base when the temperature changes on a chip, stabilize output signals and improve measurement accuracy.
In order to achieve the purpose, the invention adopts the following technical scheme:
a sensor package structure, comprising:
a chip;
the chip comprises a base, a chip and a chip, wherein the base is provided with an accommodating cavity, the chip is arranged in the accommodating cavity, one side of the chip is supported on the base, and the other side of the chip is used for measuring pressure;
the stress buffer layer is arranged between the base and the chip and is respectively fixedly connected with the base and the chip, and the stress buffer layer is used for buffering the stress transmitted to the chip by the base.
Optionally, the stress buffer layer includes carrier and glue film, the side respectively is provided with the one deck about the carrier the glue film, the downside of carrier passes through the glue film with the base rigid coupling, the side of going up of carrier passes through the glue film with the chip rigid coupling.
Optionally, the chip includes a silicon chip and a substrate, the silicon chip is fixedly connected to the substrate, the silicon chip is used for measuring pressure, and the substrate is fixedly connected to the carrier through the adhesive layer; the coefficient of thermal expansion of the substrate and the carrier is the same and smaller than that of the base.
Optionally, the carrier is made of kovar alloy or ceramic material.
Optionally, the accommodating cavity includes a first accommodating cavity and a second accommodating cavity, the first accommodating cavity is communicated with the second accommodating cavity, the chip is located in the first accommodating cavity, and the stress buffer layer is located in the second accommodating cavity.
Optionally, a cavity is formed in one side, fixedly connected with the substrate, of the silicon wafer, a first through hole communicated with the cavity is formed in the substrate, a second through hole communicated with the first through hole is formed in the stress buffer layer, and a vent hole communicated with the second through hole and the outside atmosphere is formed in the base.
Optionally, the sensor package structure further includes a plurality of pins, a plurality of the pins are all inserted into the base, one end of each pin is arranged in the first accommodating cavity and connected to the chip through a metal wire, and the other end of each pin is arranged outside the base and connected to an external circuit.
Optionally, each of the pins and the base are insulated and fixedly connected.
Optionally, the sensor package structure further includes a cover plate, the accommodating cavity is filled with a filling medium, and the cover plate is fixedly connected to the base and used for sealing the filling medium in the accommodating cavity.
Optionally, the base is made of a metal material.
The invention has the beneficial effects that: according to the sensor packaging structure provided by the invention, the chip is connected with the base through the stress buffer layer, and the stress buffer layer can reduce the influence of stress generated by the base when the temperature changes on the chip, so that the output signal of the chip is stable, the measurement error can be reduced, and the measurement precision is improved.
Drawings
Fig. 1 is a schematic structural diagram of a sensor package structure according to an embodiment of the present invention;
fig. 2 is an enlarged view at a in fig. 1.
In the figure:
1-chip; 11-a silicon wafer; 111-a cavity; 12-a substrate; 121 — a first via;
2-a base; 21-a vent hole;
3-a stress buffer layer; 31-a carrier; 32-glue layer; 33-a second via;
4-a first containing cavity; 5-a second containing cavity; 6-pin; 7-a metal wire; 8-cover plate.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "left", "right", and the like are used based on the orientations and positional relationships shown in the drawings only for convenience of description and simplification of operation, and do not indicate or imply that the referred device or element must have a specific orientation, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
As shown in fig. 1, the sensor package structure includes a chip 1, a base 2 and a stress buffer layer 3, wherein the base 2 is provided with an accommodating cavity, the chip 1 is disposed in the accommodating cavity, one side of the chip 1 is supported on the base 2, and the other side is used for measuring pressure; stress buffer layer 3 sets up between base 2 and chip 1 and respectively with base 2 and chip 1 rigid coupling, and stress buffer layer 3 is used for buffering the stress that transmits for chip 1 by base 2. It can be understood that the base 2 can generate stress due to temperature change, the stress generated by the base 2 can be buffered through the stress buffer layer 3, the influence of the stress on the chip 1 is reduced, signals output by the chip 1 are stable, measurement errors can be reduced, and measurement accuracy is improved.
Optionally, the sensor package structure further includes a cover plate 8, the containing cavity is filled with a filling medium, and the cover plate 8 is fixedly connected to the base 2 and is used for sealing the filling medium in the containing cavity. It can be understood that, through the cover plate 8 with fill medium and chip 1 sealed in holding the intracavity, when carrying out pressure measurement, external pressure passes through fill medium from cover plate 8 and finally transmits to chip 1, chip 1 produces the deformation receiving the pressure effect to convert pressure signal to the electric signal and export to external circuit, in order to reach the purpose of measuring pressure. In this embodiment, the sensor encapsulated by the sensor encapsulation structure is a gauge pressure sensor, and the filling medium is silicon oil, in other embodiments, the sensor can also be a differential pressure sensor or an absolute pressure sensor, and the filling medium can also be other liquid media or gas media and the like.
Optionally, as shown in fig. 2, the stress buffer layer 3 includes a carrier 31 and an adhesive layer 32, the upper and lower sides of the carrier 31 are respectively provided with one adhesive layer 32, the lower side of the carrier 31 is fixedly connected to the base 2 through the adhesive layer 32, and the upper side of the carrier 31 is fixedly connected to the chip 1 through the adhesive layer 32. In this embodiment, the glue layer 32 can be used as an adhesive and can also be used as a flexible pad to prevent external vibration impact, i.e., the stress buffering layer 3 can not only buffer the stress transmitted from the base 2 to the chip 1, but also reduce the influence of the external vibration impact on the chip 1.
Optionally, as shown in fig. 2, the chip 1 includes a silicon chip 11 and a substrate 12, the silicon chip 11 is fixedly connected to the substrate 12, the silicon chip 11 is used for measuring pressure, and the substrate 12 is fixedly connected to the carrier 31 through an adhesive layer 32; the coefficient of thermal expansion of the substrate 12 and the carrier 31 is the same and smaller than the coefficient of thermal expansion of the base 2. It can be understood that the magnitude of the deformation of the object caused by the temperature is related to the thermal expansion coefficient of the material, and the same thermal expansion coefficient of the substrate 12 and the carrier 31 can ensure that the deformation of the substrate 12 and the carrier 31 caused by the temperature change is the same, and the influence caused by the difference of the thermal stress inside the substrate 12 and the carrier 31 can be reduced. In this embodiment, the gauge pressure sensor is the packaged sensor, and the substrate 12 is made of glass, and in other embodiments, the substrate 12 made of different materials may be selected according to the type of the sensor.
In this embodiment, the carrier 31 is made of kovar alloy or ceramic material, and the base 2 is made of metal material. It is understood that the substrate 12 is made of glass having a thermal expansion coefficient of 4 to 6 × 10-6The coefficient of thermal expansion of the kovar alloy or ceramic is 4-6 x 10 at/° C-6V. C. The base 2 has a thermal expansion coefficient of 12-18 x 10-6A metal having a coefficient of thermal expansion greater than that of the carrier 31 and the substrate 12 per deg.c. In other embodiments, other materials with the same thermal expansion coefficient may be selected, and the carrier 31 may be made of other materials according to the material of the substrate 12. The material of the base 2 can also be ceramic or plastic.
Optionally, the accommodating cavities include a first accommodating cavity 4 and a second accommodating cavity 5, the first accommodating cavity 4 is communicated with the second accommodating cavity 5, the chip 1 is located in the first accommodating cavity 4, and the stress buffer layer 3 is located in the second accommodating cavity 5. In this embodiment, the diameter that the second held chamber 5 is less than the diameter that the first chamber 4 that holds, does not do the restriction as to the diameter size that the second held chamber 5, only need guarantee can hold stress buffer layer 3 can, set up like this and can guarantee that processing is simple and convenient and save the filling medium. In other embodiments, the second receiving cavity 5 may not be provided, and the chip 1 and the stress buffer layer 3 may be placed in one receiving cavity.
Alternatively, as shown in fig. 2, a cavity 111 is formed on the side where the silicon wafer 11 is fixedly connected to the substrate 12, the substrate 12 is provided with a first through hole 121 communicated with the cavity 111, the stress buffer layer 3 is provided with a second through hole 33 communicated with the first through hole 121, and the base 2 is provided with a vent 21 communicating the second through hole 33 with the external atmosphere. In this embodiment, the packaged sensor is a gauge pressure sensor, and it can be understood that, in the gauge pressure sensor, one side of the silicon chip 11 should be in an environment of atmospheric pressure, and the cavity 111 can be filled with the atmosphere by communicating with the external atmosphere through the first through hole 121, the second through hole 33 and the vent hole 21, that is, one side of the silicon chip 11 can be ensured to be in the environment of atmospheric pressure. In other embodiments, a vent tube may also be used to directly communicate the cavity 111 with the outside atmosphere.
Optionally, as shown in fig. 1, the sensor package structure further includes a plurality of pins 6, the plurality of pins 6 are all disposed through the base 2, one end of each pin 6 is disposed in the first accommodating cavity 4 and connected to the chip 1 through a metal wire 7, and the other end is disposed outside the base 2 and connected to an external circuit. In this embodiment, two of the pins 6 are connected to the chip 1 through the metal wires 7, and serve as the positive electrode and the negative electrode of the chip 1 for outputting electrical signals, and the pins 6 are made of kovar alloy. In other embodiments, the chip 1 may further be connected with three or four pins 6 according to the test requirement, and the pins 6 may also be made of other materials.
In order to ensure the sealing property and the insulating property of the sensor packaging structure, optionally, each pin 6 is fixedly connected with the base 2 in an insulating way. In this embodiment, all through glass sintering fixed connection between each pin 6 and the base 2, can also guarantee to be connected reliably and insulating between pin 6 and the base 2, can prevent that pin 6 from influencing the accuracy of chip 1 last measuring result at the electrically conductive in-process base 2 of electric current conduction, can avoid having the gap between pin 6 and base 2 simultaneously, make this sensor packaging structure reach complete sealedly, and then improve the accuracy of chip 1 measurement. In other embodiments, other materials such as insulating glue may be used for insulation sealing.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A sensor package structure, comprising:
a chip (1);
the pressure measuring device comprises a base (2), wherein the base (2) is provided with an accommodating cavity, the chip (1) is arranged in the accommodating cavity, one side of the chip (1) is supported on the base (2), and the other side of the chip is used for measuring pressure;
the stress buffer layer (3), the stress buffer layer (3) set up in base (2) with between chip (1) and respectively with base (2) with chip (1) rigid coupling, stress buffer layer (3) are used for buffering by base (2) transmit for the stress of chip (1).
2. The sensor package structure of claim 1, wherein the stress buffering layer (3) comprises a carrier (31) and a glue layer (32), the glue layer (32) is disposed on each of the upper and lower sides of the carrier (31), the lower side of the carrier (31) is fixedly connected to the base (2) through the glue layer (32), and the upper side of the carrier (31) is fixedly connected to the chip (1) through the glue layer (32).
3. The sensor package structure according to claim 2, wherein the chip (1) comprises a silicon chip (11) and a substrate (12), the silicon chip (11) is fixedly connected with the substrate (12), the silicon chip (11) is used for measuring pressure, and the substrate (12) is fixedly connected with the carrier (31) through the adhesive layer (32); the coefficient of thermal expansion of the substrate (12) and the carrier (31) is the same and smaller than the coefficient of thermal expansion of the base (2).
4. Sensor package structure according to claim 3, characterized in that the carrier (31) is made of Kovar or ceramic.
5. The sensor package structure of claim 1, wherein the receiving cavity comprises a first receiving cavity (4) and a second receiving cavity (5), the first receiving cavity (4) and the second receiving cavity (5) are communicated, the chip (1) is located in the first receiving cavity (4) and the stress buffer layer (3) is located in the second receiving cavity (5).
6. The sensor package structure of claim 3, wherein a cavity (111) is formed on one side of the silicon chip (11) fixedly connected with the substrate (12), the substrate (12) is provided with a first through hole (121) communicated with the cavity (111), the stress buffer layer (3) is provided with a second through hole (33) communicated with the first through hole (121), and the base (2) is provided with a vent hole (21) communicated with the second through hole (33) and the external atmosphere.
7. The sensor package structure of claim 5, further comprising a plurality of pins (6), wherein the plurality of pins (6) are all disposed through the base (2), one end of each pin (6) is disposed in the first accommodating cavity (4) and connected to the chip (1) through a metal wire (7), and the other end of each pin (6) is disposed outside the base (2) and connected to an external circuit.
8. The sensor package structure according to claim 7, wherein each of the pins (6) is fixed to the base (2) in an insulated manner.
9. The sensor package structure of claim 1, further comprising a cover plate (8), wherein the receiving cavity is filled with a filling medium, and the cover plate (8) is fixedly connected to the base (2) and is used for sealing the filling medium in the receiving cavity.
10. The sensor package structure according to claim 1, wherein the base (2) is made of a metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010017401.3A CN111128921A (en) | 2020-01-08 | 2020-01-08 | Sensor packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010017401.3A CN111128921A (en) | 2020-01-08 | 2020-01-08 | Sensor packaging structure |
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| Publication Number | Publication Date |
|---|---|
| CN111128921A true CN111128921A (en) | 2020-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010017401.3A Pending CN111128921A (en) | 2020-01-08 | 2020-01-08 | Sensor packaging structure |
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| CN (1) | CN111128921A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
-
2020
- 2020-01-08 CN CN202010017401.3A patent/CN111128921A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
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