CN106134489B - A kind of high-temp pressure sensor encapsulating structure - Google Patents
A kind of high-temp pressure sensor encapsulating structureInfo
- Publication number
- CN106134489B CN106134489B CN201218008006.5A CN201218008006A CN106134489B CN 106134489 B CN106134489 B CN 106134489B CN 201218008006 A CN201218008006 A CN 201218008006A CN 106134489 B CN106134489 B CN 106134489B
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- encapsulating structure
- aluminium nitride
- stress
- boss
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to a kind of high-temp pressure sensor encapsulating structure, comprise carborundum sensitive chip, aluminium nitride pedestal, stress buffer substrate, high temperature seal glass, stem, can cut down outer cover and thermocouple, wherein aluminium nitride pedestal upper surface has a boss, on boss, place stress buffer substrate, on stress buffer substrate, place carborundum sensitive chip; Boss periphery is stress isolation groove, stress isolation groove is arranged with two or more through holes outward, stem is realized being fixedly connected with of stem and aluminium nitride pedestal through through hole by high temperature seal glass sintering, aluminium nitride pedestal lower surface is installed thermocouple, aluminium nitride pedestal is positioned over and can be cut down on outer cover by positioning step, and aluminium nitride pedestal and can cut down between outer cover and carry out sintering connection by high temperature seal glass. This encapsulating structure is high temperature resistant, effectively reduces technology stress and the impact of high temperature thermal stress on MEMS pressure sensor sensitive chip, further promotes high-temperature sensor certainty of measurement.
Description
Technical field
The present invention relates to a kind of miniature electronic mechanical encapsulation structure, particularly relate to a kind of high temperature pressure sensingDevice packaging.
Background technology
High-temp pressure sensor is explored and the modern times at Aeronautics and Astronautics engine chamber pressure monitoring, deep spaceThe fields such as the chemical weapons device change system demand that has a wide range of applications. Due to the particularity of measurement environment, requirementSensor can tolerate 500 DEG C of above high-temperature medium environment.
High-temp pressure sensor based on SiC material is the focus of studying both at home and abroad at present. According to reports, orderThe SiC pressure sensor chip that front success is developed can be worked under up to 600 DEG C of temperature environments, stillThese chips can only carry out short-term assessment and demonstration in laboratory environment, also have a spacing from commercializationFrom. Its main cause is also not have a kind of effective encapsulation technology to can be used in more than 500 DEG C at presentHigh-temp pressure sensor encapsulation. In fact, High-temperature Packaging technology has become current high temperature pressure sensingThe ultimate challenge that device is practical.
It is will meet MEMS presser sensor chip to exist that high-temp pressure sensor encapsulates the greatest problem facingCompared with every thermomechanical requirement of carrying out high reliability work in large-temperature range. For encapsulating material, heightUnder temperature environment, easily there is the problems such as oxidation, diffusion and mechanical properties decrease, affect the long-term steady of packaging bodyQualitative; For encapsulating structure, produce larger because thermal coefficient of expansion between each encapsulating material does not mate meetingThermal stress, on the one hand can affect sensitive chip performance, can cause on the other hand structure crack impact airtightProperty and metal interconnected.
Summary of the invention
The above-mentioned deficiency that the object of the invention is to overcome prior art, provides a kind of high-temp pressure sensorEncapsulating structure, this encapsulating structure is high temperature resistant, effectively reduces technology stress and high temperature thermal stress to MEMSThe impact of pressure sensor sensitive chip, further promotes high-temperature sensor certainty of measurement.
Above-mentioned purpose of the present invention is mainly achieved by following technical solution:
A kind of high-temp pressure sensor encapsulating structure, comprises carborundum sensitive chip, aluminium nitride pedestal, answersPower cushions substrate, high temperature seal glass, stem, can cut down outer cover and thermocouple, wherein aluminium nitride pedestalUpper surface has a boss, places stress buffer substrate on boss, on stress buffer substrate, places carborundumSensitive chip, is all adhesively fixed between carborundum sensitive chip, stress buffer substrate and boss; Outside bossEnclose for stress isolation groove, stress isolation groove is arranged with two or more through holes outward, and stem passesThrough hole is realized being fixedly connected with of stem and aluminium nitride pedestal by high temperature seal glass sintering, aluminum-nitride-basedSeat lower surface is provided with installing hole, for thermocouple is installed, and aluminium nitride pedestal and can cutting down between outer cover by highIntermediate temperature sealing glass carries out sintering connection.
In above-mentioned high-temp pressure sensor encapsulating structure, stress buffer substrate adopts identical with sensitive chipSilicon carbide whisker sheet material, or employing and sensitive chip wafer material thermal expansion coefficient difference exist
5×10-7/ DEG C with interior ceramic material.
In above-mentioned high-temp pressure sensor encapsulating structure, the thickness of stress buffer substrate is
0.5mm～2mm。
In above-mentioned high-temp pressure sensor encapsulating structure, high temperature seal glass serviceability temperature is higher than 500 DEG C,After sintering, thermal coefficient of expansion is 45 × 10-7～65×10-7/℃。
In above-mentioned high-temp pressure sensor encapsulating structure, stem adopts nickel, platinum or gold preparation.
In above-mentioned high-temp pressure sensor encapsulating structure, the anti-oxidant gold of one deck that can cut down outer cover coating surfaceBelong to protective layer, plating technic comprises plating, chemical plating or sputter coating, described anti-oxidation metal protective layerMaterial is nickel, platinum or gold.
In above-mentioned high-temp pressure sensor encapsulating structure, boss is rectangular boss, the size of rectangular bossConsistent with carborundum sensitive chip crystallite dimension, the stress isolation groove of boss periphery is back-shaped stress isolationGroove.
In above-mentioned high-temp pressure sensor encapsulating structure, carborundum sensitive chip upper surface has been prepared resistance to heightTemperature metal electrode, is connected by platinum filament between described metal electrode and stem.
In above-mentioned high-temp pressure sensor encapsulating structure, aluminium nitride pedestal is positioned over by positioning step canCut down on outer cover aluminium nitride pedestal and can cut down between outer cover and carry out sintering connection by high temperature seal glass.
In above-mentioned high-temp pressure sensor encapsulating structure, the mounting hole site of aluminium nitride pedestal lower surface is in protrudingUnder platform.
The present invention compared with prior art has following beneficial effect:
(1) the present invention has carried out innovative design to the structure of sensor-packaging structure, on aluminium nitride pedestal, establishesCount and be specifically designed to the boss of placing sensitive chip, special stress isolation groove, having introduced in addition shouldPower buffering substrate, can effectively reduce technology stress and high temperature thermal stress is quick to MEMS pressure sensorThe impact of sense chip;
(2) the present invention has optimized each portion in sensor-packaging structure by theoretical research in conjunction with lot of experimentsPart prepare material, encapsulating material is all selected exotic material, and has approaching thermal coefficient of expansion, exampleAs stress buffer substrate adopts the silicon carbide whisker sheet material identical with sensitive chip, or employing and responsive coreWafer material thermal expansion coefficient difference is 5 × 10-7/ DEG C with interior ceramic material, high temperature seal glass makesBy temperature, higher than 500 DEG C, after sintering, thermal coefficient of expansion is 45 × 10-7～65×10-7/ DEG C etc., guarantee envelopeThe high-temperature stability of assembling structure, can withstand high temperatures the temperature shock of 500 DEG C～-65 DEG C, to greatest extentReduce the adverse effect of encapsulation to high-temperature sensor performance itself; Solve existing encapsulating structure heat acclimationProperty poor, cannot be used for the problem that high-temperature medium environment is directly measured
(3) can cut down outer cover coating surface in sensor-packaging structure of the present invention one deck anti-oxidation metal protectionLayer, plating technic comprises the modes such as plating, chemical plating and sputter coating, anti-oxidation metal protective layer materialMaterial is selected nickel, platinum or gold, can cut down further balance aluminium nitride pedestal Yu Hou road package metals of outer coverBetween housing, thermal coefficient of expansion does not mate the thermal stress causing, and effectively reduces technology stress;
(4) in sensor-packaging structure of the present invention, thermocouple has been installed at the aluminium nitride pedestal back side, for obtainingSensitive chip temperature value carries out subsequent conditioning circuit compensation, further promotes high-temperature sensor certainty of measurement.
Brief description of the drawings
Fig. 1 is high-temp pressure sensor encapsulating structure schematic diagram of the present invention;
Fig. 2 is the aluminum-nitride-based holder structure top view of the present invention;
Fig. 3 is the aluminum-nitride-based holder structure cutaway view of the present invention.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Be illustrated in figure 1 high-temp pressure sensor encapsulating structure structural representation of the present invention, high temperature of the present inventionPressure sensor packaging structure comprises carborundum sensitive chip 1, aluminium nitride pedestal 2, stress buffer substrate3, high temperature seal glass 4,5, stem 6, can cut down outer cover 7 and thermocouple 8, aluminium nitride pedestal 2And can cut down between outer cover 7 and carry out sintering connection by high temperature seal glass 4, aluminium nitride pedestal 2 and lead-in wireBetween post 6, carry out sintering connection by high temperature seal glass 5. Carborundum sensitive chip 1 passes through high-temp glueBe adhered on stress buffer substrate 3, then stress buffer substrate 3 is fixed on aluminium nitride by high-temp glue againPedestal 2 upper surfaces. Thermocouple 7 is fixed on aluminium nitride pedestal 2 lower surfaces by high-temp glue.
Be illustrated in figure 2 the aluminum-nitride-based holder structure top view of the present invention, Fig. 3 is aluminium nitride pedestal of the present inventionStructure cutaway view, aluminium nitride pedestal 2 upper surfaces have a boss 21, for carrying the responsive core of carborundumSheet 1. In the present embodiment, boss 21 is rectangular boss 21, its length and width and carborundum sensitive chip 1 crystal grainConsistent size, is conducive to chip edge and implements to aim at boss. Rectangular boss 21 peripheries have back-shaped answeringPower isolation channel 22, for reducing technology stress and the impact of high temperature thermal stress on carborundum sensitive chip.Stress isolation groove 22 peripheries have at least two or more through hole 23, for anchor leg post6, stem 6 is realized stem 6 and aluminium nitride through through hole 23 by high temperature seal glass 5 sinteringBeing fixedly connected with of pedestal 2. Aluminium nitride pedestal 2 lower surfaces have thermocouple mounting hole 24, this installing hole24 are positioned under rectangular boss 21.
Aluminium nitride pedestal 2 is positioned over and can be cut down on outer cover 7 by positioning step 25, has one between the twoFixed annular gap, annular gap is 0.5mm～2mm, for filled high-temperature seal glass 4. CarbonizationSilicon-sensitive chip 1 upper surface has been prepared refractory metal electrode, between electrode and stem 6, passes through platinum filamentInterconnection.
Stress buffer substrate 3 can adopt the silicon carbide whisker sheet material identical with sensitive chip 1, orWith sensitive chip 1 wafer material thermal expansion coefficient difference 5 × 10-7/ DEG C with interior ceramic material. StressBuffering substrate 3 length and width and sensitive chip 1 consistent size, thickness is 0.5mm～2mm.
High temperature seal glass 4,5 its serviceability temperatures are higher than 500 DEG C, and after sintering, thermal coefficient of expansion is
45×10-7～65×10-7/℃。
Stem 6 can be selected the exotic material preparations such as nickel, platinum, gold.
Can cut down outer cover 7 and be mainly used in thermal expansion between balance aluminium nitride pedestal 2 Yu Hou road package metals housingsCoefficient does not mate the thermal stress causing. One deck anti-oxidation metal protective layer that can cut down outer cover 7 coating surfaces,Anti-oxidation metal protective layer material can be selected nickel, platinum or gold. Plating technic comprises plating, chemical platingAnd the mode such as sputter coating.
Embodiment 1
Aluminium nitride pedestal 2 is positioned over and can be cut down on outer cover 7 by positioning step 25, has one between the twoFixed annular gap, for filled high-temperature seal glass 4. High temperature seal glass serviceability temperature higher than500 DEG C, after sintering, thermal coefficient of expansion is 49.5 × 10-7/ DEG C. Stem 6 is through through hole 23, the two itBetween gap also adopt above-mentioned high temperature seal glass 4 to fill, stem 6 adopts noble metal platinum preparation. WillSaid structure is placed in graphite frock, and entirety enters continuous tunnel furnace and carries out sintering, can realize aluminium nitride pedestal2, can cut down the Leakless sealing of outer cover 7 and stem 6. Can cut down the anti-oxidant of outer cover 7 in order to increaseAbility, after sintering completes at its electroplating surface one deck nickel.
Carborundum sensitive chip 1 is adhered to by high-temp glue the carborundum stress buffer base that thickness is 1mmOn sheet 3, and then be adhered to by high-temp glue in the rectangular boss 21 of aluminium nitride pedestal 2. CarborundumSensitive chip 1 upper surface has been prepared refractory metal electrode, mutual by platinum filament between electrode and stem 6Connect. Thermocouple 8 is inserted in thermocouple mounting hole 24, and filled high-temperature glue is fixed.
Adopt high temperature furnace and low-temperature test chamber packaging body to be carried out to the temperature cycling test of 500 DEG C～-65 DEG C.First high temperature furnace is warming up to 500 DEG C and also stablizes 30min, low-temperature test chamber is cooled to-65 DEG C and stable30min; Then packaging body is put into high temperature furnace, insulation 30min; Packaging body is taken out in 1minBe transferred in low-temperature test chamber insulation 30min; Repeat above two steps, until circulated for 10 times.
Before and after temperature cycling test, carry out airtight by helium mass spectrometer leak detector to encapsulating structure glass sealing faceProperty is tested, and leak rate is all less than 1 × 10-6Pa·l/s。
The above be only the detailed description of the invention of the best of the present invention, but protection scope of the present invention is notBe confined to this, any be familiar with those skilled in the art the present invention disclose technical scope in, canThe variation of expecting easily or replacement, within all should being encompassed in protection scope of the present invention.
The content not being described in detail in description of the present invention belongs to the known of professional and technical personnel in the fieldTechnology.
Claims (10)
1. a high-temp pressure sensor encapsulating structure, is characterized in that: comprise carborundum sensitive chip(1), aluminium nitride pedestal (2), stress buffer substrate (3), high temperature seal glass (4,5), lead-in wirePost (6), can cut down outer cover (7) and thermocouple (8), wherein aluminium nitride pedestal (2) upper surface has oneBoss (21), the upper stress buffer substrate (3) of placing of boss (21), on stress buffer substrate (3)Place carborundum sensitive chip (1), carborundum sensitive chip (1), stress buffer substrate (3) and protrudingPlatform is all adhesively fixed between (21); Boss (21) periphery is stress isolation groove (22), stress isolationThe outer two or more through holes (23) that are arranged with of groove (22), stem (6) is through through hole (23)Realize the fixing company of stem (6) and aluminium nitride pedestal (2) by high temperature seal glass (5) sinteringConnect, aluminium nitride pedestal (2) lower surface is provided with installing hole (24), for thermocouple (8), nitrogenize are installedAluminium base (2) and can cut down between outer cover (7) and carry out sintering connection by high temperature seal glass (4).
2. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described stress buffer substrate (3) adopts the silicon carbide whisker sheet material identical with sensitive chip (1), orAdopt with sensitive chip (1) wafer material thermal expansion coefficient difference 5 × 10-7/ DEG C with interior ceramic material.
3. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:The thickness of described stress buffer substrate (3) is 0.5mm～2mm.
4. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described high temperature seal glass (4,5) serviceability temperature is higher than 500 DEG C, and after sintering, thermal coefficient of expansion is
45×10-7～65×10-7/℃。
5. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described stem (6) adopts nickel, platinum or gold preparation.
6. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described one deck anti-oxidation metal protective layer that cut down outer cover (7) coating surface, plating technic comprise plating,Chemical plating or sputter coating, described anti-oxidation metal protective layer material is nickel, platinum or gold.
7. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described boss (21) is rectangular boss, the size of rectangular boss (21) and carborundum sensitive chip (1)Crystallite dimension is consistent, and the peripheral stress isolation groove (22) of boss (21) is back-shaped stress isolation groove.
8. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described carborundum sensitive chip (1) upper surface has been prepared refractory metal electrode, described metal electrode withStem connects by platinum filament between (6).
9. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:Described aluminium nitride pedestal (2) is positioned over and can be cut down outer cover (7) above by positioning step (25), aluminium nitridePedestal (2) and can cut down between outer cover (7) and carry out sintering connection by high temperature seal glass (4).
10. a kind of high-temp pressure sensor encapsulating structure according to claim 1, is characterized in that:The installing hole (24) of described aluminium nitride pedestal (2) lower surface be positioned at boss (21) under.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201218008006.5A CN106134489B (en) | 2012-12-26 | 2012-12-26 | A kind of high-temp pressure sensor encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201218008006.5A CN106134489B (en) | 2012-12-26 | 2012-12-26 | A kind of high-temp pressure sensor encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106134489B true CN106134489B (en) | 2014-10-22 |
Family
ID=57249965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201218008006.5A Active CN106134489B (en) | 2012-12-26 | 2012-12-26 | A kind of high-temp pressure sensor encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106134489B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106908190A (en) * | 2017-02-15 | 2017-06-30 | 襄阳东驰汽车部件有限公司 | A kind of electric process for sealing through walls of highly reliable pressure sensor divider wall air-tightness |
| CN108369148A (en) * | 2015-12-18 | 2018-08-03 | 恩德莱斯和豪瑟尔欧洲两合公司 | Ceramic pressure measuring unit at least one temperature transducer and the pressure sensor with such pressure measurement cell |
| CN108593195A (en) * | 2018-05-04 | 2018-09-28 | 中北大学 | High temperature hydraulic pressure sensor-packaging structure |
| CN109520664A (en) * | 2018-12-20 | 2019-03-26 | 西安赛尔电子材料科技有限公司 | A kind of titanium alloy piezoresistive pressure sensor pedestal and preparation method thereof |
| CN109540374A (en) * | 2019-01-10 | 2019-03-29 | 中南大学 | Ultrasound sintering packaging system |
| CN109668661A (en) * | 2018-12-07 | 2019-04-23 | 中国电子科技集团公司第十三研究所 | GaN high-temp pressure sensor and preparation method |
| CN109781334A (en) * | 2019-01-02 | 2019-05-21 | 西安交通大学 | A kind of leadless packaging structure and packaging method of piezoresistive transducer |
| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
| CN110455456A (en) * | 2019-07-10 | 2019-11-15 | 清华大学 | A kind of encapsulating structure of silicon carbide high-temp pressure sensor |
| CN110501097A (en) * | 2019-08-29 | 2019-11-26 | 苏州感芯微系统技术有限公司 | A kind of silicon pressure sensor module of low stress |
| CN111003683A (en) * | 2019-10-29 | 2020-04-14 | 武汉大学 | SiC high-temperature pressure sensor and packaging method thereof |
| CN111595513A (en) * | 2020-05-25 | 2020-08-28 | 北京遥测技术研究所 | Calibration device of ultra-high temperature pressure sensor |
| CN112188728A (en) * | 2020-09-17 | 2021-01-05 | 西安交通大学 | Temperature and pressure integrated sensor based on flip chip and packaging method thereof |
| CN112798157A (en) * | 2020-12-28 | 2021-05-14 | 西安赛尔电子材料科技有限公司 | Pressure sensor base and manufacturing method thereof |
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
-
2012
- 2012-12-26 CN CN201218008006.5A patent/CN106134489B/en active Active
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369148A (en) * | 2015-12-18 | 2018-08-03 | 恩德莱斯和豪瑟尔欧洲两合公司 | Ceramic pressure measuring unit at least one temperature transducer and the pressure sensor with such pressure measurement cell |
| US10883892B2 (en) | 2015-12-18 | 2021-01-05 | Endress + Hauser SE+Co. KG | Ceramic pressure measurement cell having at least one temperature transducer and pressure sensor having a pressure measurement cell of this type |
| CN108369148B (en) * | 2015-12-18 | 2020-08-04 | 恩德莱斯和豪瑟尔欧洲两合公司 | Ceramic pressure measuring cell having at least one temperature transducer and pressure sensor having such a pressure measuring cell |
| CN106908190A (en) * | 2017-02-15 | 2017-06-30 | 襄阳东驰汽车部件有限公司 | A kind of electric process for sealing through walls of highly reliable pressure sensor divider wall air-tightness |
| CN106908190B (en) * | 2017-02-15 | 2019-05-03 | 襄阳东驰汽车部件有限公司 | A kind of electrical method for sealing through walls of highly reliable pressure sensor divider wall air-tightness |
| CN108593195A (en) * | 2018-05-04 | 2018-09-28 | 中北大学 | High temperature hydraulic pressure sensor-packaging structure |
| CN108593195B (en) * | 2018-05-04 | 2020-03-17 | 中北大学 | High-temperature hydraulic pressure sensor packaging structure |
| CN109668661A (en) * | 2018-12-07 | 2019-04-23 | 中国电子科技集团公司第十三研究所 | GaN high-temp pressure sensor and preparation method |
| CN109520664A (en) * | 2018-12-20 | 2019-03-26 | 西安赛尔电子材料科技有限公司 | A kind of titanium alloy piezoresistive pressure sensor pedestal and preparation method thereof |
| CN109781334A (en) * | 2019-01-02 | 2019-05-21 | 西安交通大学 | A kind of leadless packaging structure and packaging method of piezoresistive transducer |
| CN109540374B (en) * | 2019-01-10 | 2024-03-15 | 中南大学 | Ultrasonic sintering packaging device |
| CN109540374A (en) * | 2019-01-10 | 2019-03-29 | 中南大学 | Ultrasound sintering packaging system |
| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
| CN110455456A (en) * | 2019-07-10 | 2019-11-15 | 清华大学 | A kind of encapsulating structure of silicon carbide high-temp pressure sensor |
| CN110501097A (en) * | 2019-08-29 | 2019-11-26 | 苏州感芯微系统技术有限公司 | A kind of silicon pressure sensor module of low stress |
| CN111003683A (en) * | 2019-10-29 | 2020-04-14 | 武汉大学 | SiC high-temperature pressure sensor and packaging method thereof |
| CN111595513A (en) * | 2020-05-25 | 2020-08-28 | 北京遥测技术研究所 | Calibration device of ultra-high temperature pressure sensor |
| CN111595513B (en) * | 2020-05-25 | 2022-04-12 | 北京遥测技术研究所 | Calibration device of ultra-high temperature pressure sensor |
| CN112188728A (en) * | 2020-09-17 | 2021-01-05 | 西安交通大学 | Temperature and pressure integrated sensor based on flip chip and packaging method thereof |
| CN112798157A (en) * | 2020-12-28 | 2021-05-14 | 西安赛尔电子材料科技有限公司 | Pressure sensor base and manufacturing method thereof |
| CN112985653A (en) * | 2021-02-09 | 2021-06-18 | 上海洛丁森工业自动化设备有限公司 | Pressure sensor's chip package unit and pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106134489B (en) | A kind of high-temp pressure sensor encapsulating structure | |
| CN102221429B (en) | High-temperature pressure and temperature compounded sensor and preparation method thereof | |
| CN105758543B (en) | A kind of refractory metal or alloy thermocouple and its production and temperature correction method | |
| CN105043643B (en) | High-temp pressure sensor and preparation method thereof | |
| CN105776868B (en) | A kind of high temperature resistant height insulation seal glass and preparation method thereof | |
| CN108363430B (en) | Temperature control device and temperature control method of high-precision quartz accelerometer | |
| CN110954234A (en) | Polymer precursor ceramic film RTD and preparation method thereof | |
| CN105509921A (en) | Temperature sensor taking metal or alloy as temperature sensing probe and manufacture method and temperature correction method of temperature sensor | |
| CN111220652A (en) | High-temperature heat conductivity coefficient measuring device based on protection hot plate method | |
| CN101034016B (en) | Special type WRe temperature sensor | |
| CN107014513B (en) | Sleeve type platinum resistor temperature sensing device | |
| WO2022120990A1 (en) | Dew point sensor | |
| CN103398798A (en) | Thermocouple temperature measuring device for high-pressure environment | |
| CN202247005U (en) | Temperature measuring device for polysilicon ingot casting furnace | |
| CN201795874U (en) | Thermoelectric couple for vacuum high-temperature measurement and control | |
| Ye et al. | Development of novel glass-based composite seals for planar intermediate temperature solid oxide fuel cells | |
| CN103308217B (en) | Encapsulation structure of high-temperature pressure sensor | |
| CN103868962A (en) | Test fixture of semi-sealing type solid oxide fuel cell cathode | |
| CN209979088U (en) | Novel film thermocouple | |
| CN110455456A (en) | A kind of encapsulating structure of silicon carbide high-temp pressure sensor | |
| CN110987218A (en) | High-temperature-resistant and quick-response thin film platinum resistance sensitive element and manufacturing method thereof | |
| CN102891113B (en) | Integrating method for high-sensitivity temperature-controlled thick film hybrid integrated circuit | |
| Jayaraman et al. | Evolution of the Development of In-Sodium Oxygen Sensor and Its Present Status | |
| CN108663399B (en) | Thermal conductivity measuring device for building glass | |
| CN212903243U (en) | Triaxial temperature control rotary table with heat insulation mechanism inside |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR03 | Grant of secret patent right | ||
| GRSP | Grant of secret patent right | ||
| DC01 | Secret patent status has been lifted | ||
| DCSP | Declassification of secret patent |