CN111128722A - Method for realizing normally-off HEMT device by annealing doping - Google Patents
Method for realizing normally-off HEMT device by annealing doping Download PDFInfo
- Publication number
- CN111128722A CN111128722A CN201911238442.9A CN201911238442A CN111128722A CN 111128722 A CN111128722 A CN 111128722A CN 201911238442 A CN201911238442 A CN 201911238442A CN 111128722 A CN111128722 A CN 111128722A
- Authority
- CN
- China
- Prior art keywords
- hemt device
- laser
- magnesium
- normally
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000000137 annealing Methods 0.000 title claims abstract description 23
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 39
- 239000011777 magnesium Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention discloses a method for realizing a normally-off HEMT device by annealing and doping. The method comprises the following steps: in a vacuum atmosphere, scanning the magnesium grid bars by adopting laser, and realizing the thermal doping of the magnesium grid bars in the AlGaN material by the laser to realize the performance of the normally-off HEMT device; the method has the advantages of short doping time, indirectly controllable doping concentration and depth and small influence on channel two-dimensional electron gas. The method is a method for realizing the normally-off HEMT device by rapid doping, and has important significance for realizing the high-performance normally-off HEMT device.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for realizing a normally-off HEMT device by annealing and doping.
Background
With the development of power radio frequency devices, normally-off HEMTs become hot research spots in the field.
The doping method for realizing the normally-off HEMT device is mainly thermal diffusion or ion implantation at present. Thermal diffusion, which uses primarily magnesium metal to place dopant impurity materials in the surface region of the semiconductor and is heated to high temperatures by a conventional rapid annealing furnace to diffuse into the material. Ion implantation ionizes dopant impurities and adds hundreds of kilo-electron volts to the dopant impurities, and directly excites the dopant impurities in a semiconductor material, so that the dopant impurities become directly doped impurities at the excited positions. Thermal diffusion techniques as well as ion implantation techniques are well-regarded in the art as being able to introduce predetermined impurity concentrations in selected regions to thereby fabricate devices associated with III-V compounds and p-type GaN.
CN109888013A discloses a magnesium-doped enhanced GaN-based HEMT device and a preparation method thereof, in the current thermal diffusion method, the control of the concentration and depth of diffusion is difficult, the diffusion time is long, and the concentration and mobility of two-dimensional electron gas are affected by the diffusion of impurities into a heterojunction channel, thereby affecting the performance of the device. The invention adopts novel laser annealing to realize magnesium doping, effectively avoids the contradiction relation between diffusion concentration and depth control, and has short annealing time.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide a method for realizing a normally-off HEMT device by annealing and doping, which realizes effective doping of AlGaN materials in a short time by scanning a magnesium grid bar by laser and realizes the characteristic of the high-performance normally-off HEMT device.
The purpose of the invention is realized by the following technical scheme.
A method for realizing a normally-off HEMT device by annealing and doping is characterized in that under a vacuum atmosphere, a magnesium grid bar is scanned by laser, and the thermal doping of the magnesium grid bar in an AlGaN material is realized by the laser, so that the performance of the normally-off HEMT device is realized.
In the above method, the power density of the laser is 1 × 109～1×1012W/m2The scanning speed of the light beam is 1-10 mm/s.
In the above method, the scanning is a single unidirectional scanning.
In the method, the thickness of the magnesium grid bars is 1-100 nm.
A method for realizing a normally-off HEMT device by annealing and doping comprises the following steps:
(1) defining the structural shape of a magnesium grid bar on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(3) scanning a sample in the magnesium grid area by adopting laser; the laser scanning condition is a vacuum atmosphere, the power of the laser is 1-10W, the diameter of a light beam is 1-10 mu m, the scanning speed is 1-10 mm/s, and the scanning is single unidirectional scanning;
(4) and preparing a source electrode, a drain electrode and a gate electrode by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
The principle of the invention is as follows:
the invention is a high-precision selective doping preparation method, the laser can be controlled and focused to the minimum line width 2 microns of the required magnesium grid bar, and only irradiates the magnesium grid bar without damaging other areas. Secondly, the invention is a method for rapidly realizing the characteristic of forming the normally-off HEMT by doping magnesium. The laser can accelerate the doping of magnesium atoms in the AlGaN material at high temperature and high energy in a short time, improve the doping concentration of the AlGaN material, and control the doping depth to avoid the magnesium impurities from diffusing into a heterojunction channel as much as possible. Under the comprehensive influence, the laser improved doping effectively realizes the performance of the normally-off HEMT device.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the preparation method provided by the invention has the advantages that the non-doped region is not influenced, other regions are not damaged, in addition, the steps of the method are simple, the time is short, and the method has important significance for controlling the doping depth and realizing a high-performance normally-off HEMT device.
Drawings
FIG. 1 is a schematic diagram of a preparation method of an embodiment of the present invention.
FIG. 2 is an electron micrograph of a laser scanned magnesium grid according to an embodiment of the present invention.
Fig. 3 is a graph of device transfer characteristics measured after laser annealing doping according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided in connection with the accompanying drawings and examples, but the invention is not limited thereto. It is noted that the processes described below, if not specifically described in detail, are all realizable or understandable by those skilled in the art with reference to the prior art.
Example 1
The method for realizing the normally-off HEMT device by annealing and doping in the embodiment comprises the following steps:
(1) defining the structural shape of a magnesium grid bar on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing 50nm of metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(3) as shown in fig. 1, a sample in a magnesium grid strip area is scanned by laser (a substrate material 1, a gan hemt heterojunction 2, magnesium-containing grid strip metal 3 and laser 4 are arranged from top to bottom in sequence); and (3) scanning the magnesium metal grid bars by using laser under the condition of vacuum atmosphere. The power of the laser is 5W, the diameter of the light beam is 2 microns, the scanning speed is 1mm/s, and the scanning is single unidirectional scanning.
(4) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
Fig. 2 shows an electron micrograph of a laser-scanned magnesium grid obtained in example 1 after annealing and doping a method for realizing a normally-off HEMT device.
FIG. 3 is a graph of the transfer characteristics of the device measured in the example, from which the threshold voltage of the device is 0.4V and the maximum transconductance is 15 mS.
Example 2
The method for realizing the normally-off HEMT device by annealing and doping in the embodiment comprises the following steps:
(1) defining the structural shape of a magnesium grid bar on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing 1nm of metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(3) as shown in fig. 1, a sample in a magnesium grid strip area is scanned by laser (a substrate material 1, a gan hemt heterojunction 2, magnesium-containing grid strip metal 3 and laser 4 are arranged from top to bottom in sequence); and (3) scanning the magnesium metal grid bars by using laser under the condition of vacuum atmosphere. The power of the laser is 1W, the diameter of the light beam is 1 micron, the scanning speed is 5mm/s, and the scanning is single unidirectional scanning.
(4) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
An electron microscope photograph of the annealed and doped magnesium-scanning grid bar for realizing the normally-off HEMT device obtained in example 2 is similar to that of example 1, and can be referred to as fig. 2, and a device transfer characteristic curve is similar to that of example 1 and can be referred to as fig. 3.
Example 3
The method for realizing the normally-off HEMT device by annealing and doping in the embodiment comprises the following steps:
(1) defining the structural shape of a magnesium grid bar on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing 100nm of metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(3) as shown in fig. 1, a sample in a magnesium grid strip area is scanned by laser (a substrate material 1, a gan hemt heterojunction 2, magnesium-containing grid strip metal 3 and laser 4 are arranged from top to bottom in sequence); and (3) scanning the magnesium metal grid bars by using laser under the condition of vacuum atmosphere. The power of the laser is 10W, the diameter of the light beam is 10 microns, the scanning speed is 10mm/s, and the scanning is single unidirectional scanning.
(4) And preparing a source electrode (ohmic contact electrode), a drain electrode (ohmic contact electrode) and a gate electrode (Schottky contact electrode) by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
An electron microscope photograph of the annealed and doped magnesium-scanning grid bar for realizing the normally-off HEMT device obtained in example 3 is similar to that of example 1, and can be referred to as fig. 2, and a device transfer characteristic curve is similar to that of example 1 and can be referred to as fig. 3.
The above examples are only preferred embodiments of the present invention, which are intended to be illustrative and not limiting, and those skilled in the art should understand that they can make various changes, substitutions and alterations without departing from the spirit and scope of the invention.
Claims (5)
1. A method for realizing a normally-off HEMT device through annealing doping is characterized in that under a vacuum atmosphere, laser is adopted to scan a magnesium grid bar, and thermal doping of the magnesium grid bar in an AlGaN material is realized through laser, so that the performance of the normally-off HEMT device is realized.
2. The method for annealing doped HEMT device of claim 1, wherein the power density of the laser is 1 x 109～1×1012W/m2The scanning speed of the light beam is 1-10 mm/s.
3. The method for annealing doped HEMT device of claim 2, wherein the scan is a single unidirectional scan.
4. The method for annealing doped HEMT device of claim 1, wherein the thickness of the magnesium grid bar is 1-100 nm.
5. The method for annealing doped HEMT device of claim 1, comprising the steps of:
(1) defining the structural shape of a magnesium grid bar on the GaN HEMT heterojunction material by adopting a photoetching method;
(2) depositing metal magnesium by adopting an electron beam evaporation method, and leaving magnesium grid bars by a stripping process;
(3) scanning a sample in the magnesium grid area by adopting laser; the laser scanning condition is a vacuum atmosphere, the power of the laser is 1-10W, the diameter of a light beam is 1-10 mu m, the scanning speed is 1-10 mm/s, and the scanning is single unidirectional scanning;
(4) and preparing a source electrode, a drain electrode and a gate electrode by adopting a photoetching process, an electron beam evaporation and stripping process and a thermal annealing method to obtain the normally-off GaN HEMT device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911238442.9A CN111128722A (en) | 2019-12-06 | 2019-12-06 | Method for realizing normally-off HEMT device by annealing doping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911238442.9A CN111128722A (en) | 2019-12-06 | 2019-12-06 | Method for realizing normally-off HEMT device by annealing doping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111128722A true CN111128722A (en) | 2020-05-08 |
Family
ID=70498077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911238442.9A Pending CN111128722A (en) | 2019-12-06 | 2019-12-06 | Method for realizing normally-off HEMT device by annealing doping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111128722A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151344A (en) * | 1992-10-30 | 1994-05-31 | Semiconductor Energy Lab Co Ltd | Laser doping treatment method, insulated-gate semiconductor device and manufacture thereof |
| US20050003594A1 (en) * | 2002-11-05 | 2005-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Laser doping processing method and method for manufacturing semiconductor device |
| US20110092057A1 (en) * | 2009-10-16 | 2011-04-21 | Cree, Inc. | Methods of fabricating transistors using laser annealing of source/drain regions |
| CN109841676A (en) * | 2019-03-21 | 2019-06-04 | 华南理工大学 | Supplementary doping realizes normally-off GaN HEMT device and preparation method thereof |
-
2019
- 2019-12-06 CN CN201911238442.9A patent/CN111128722A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06151344A (en) * | 1992-10-30 | 1994-05-31 | Semiconductor Energy Lab Co Ltd | Laser doping treatment method, insulated-gate semiconductor device and manufacture thereof |
| US20050003594A1 (en) * | 2002-11-05 | 2005-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Laser doping processing method and method for manufacturing semiconductor device |
| US20110092057A1 (en) * | 2009-10-16 | 2011-04-21 | Cree, Inc. | Methods of fabricating transistors using laser annealing of source/drain regions |
| CN109841676A (en) * | 2019-03-21 | 2019-06-04 | 华南理工大学 | Supplementary doping realizes normally-off GaN HEMT device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 郝锐 等: ""垒层Si掺杂对多量子阱InGaN绿光LED性能的影响"", 《光电半导体》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Bajaj et al. | AlGaN channel field effect transistors with graded heterostructure ohmic contacts | |
| CN101252088B (en) | Realizing method of novel enhancement type AlGaN/GaN HEMT device | |
| Greco et al. | Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization | |
| CN102938413B (en) | Algan/gan heterojunction enhanced device and manufacturing method thereof | |
| US20070120215A1 (en) | Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same | |
| CN108140561A (en) | The manufacturing method of epitaxial substrate for semiconductor device, semiconductor element and epitaxial substrate for semiconductor device | |
| CN102945860B (en) | AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof | |
| CN111916351A (en) | Semiconductor device and method for manufacturing the same | |
| CN102184943A (en) | Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof | |
| CN109888013A (en) | The enhanced GaN base HEMT device and preparation method thereof of magnesium doping preparation | |
| CN107785435A (en) | A kind of low on-resistance MIS notched gates GaN base transistors and preparation method | |
| CN109950323A (en) | The III group-III nitride diode component and preparation method thereof for the superjunction that polarizes | |
| CN107154426A (en) | A kind of device architecture and implementation method for improving silicon substrate GaN HEMT breakdown voltages | |
| CN109841676A (en) | Supplementary doping realizes normally-off GaN HEMT device and preparation method thereof | |
| CN108352327A (en) | The manufacturing method of epitaxial substrate for semiconductor device, semiconductor element and epitaxial substrate for semiconductor device | |
| CN210092091U (en) | Auxiliary doping realization normally-off GaN HEMT device | |
| JP2014183092A (en) | Semiconductor device manufacturing method and dry etching device used therefor | |
| CN210092092U (en) | Magnesium-doped prepared enhanced GaN-based HEMT device | |
| CN111128722A (en) | Method for realizing normally-off HEMT device by annealing doping | |
| US20160104791A1 (en) | Method for forming an implanted area for a heterojunction transistor that is normally blocked | |
| CN112201689A (en) | Field effect transistor based on III-group nitride heterojunction and preparation method thereof | |
| CN110911484B (en) | Enhanced GaN HEMT device prepared by wet etching assisted doping and preparation method | |
| CN110808212B (en) | Gallium oxide field effect transistor and preparation method thereof | |
| CN110518067A (en) | Heterojunction field effect transistor based on channel array and preparation method thereof and application | |
| CN113823673A (en) | Enhanced GaN HEMT device based on superlattice structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200508 |