CN111128678A - Method for removing particles on mask protective film - Google Patents
Method for removing particles on mask protective film Download PDFInfo
- Publication number
- CN111128678A CN111128678A CN201911300671.9A CN201911300671A CN111128678A CN 111128678 A CN111128678 A CN 111128678A CN 201911300671 A CN201911300671 A CN 201911300671A CN 111128678 A CN111128678 A CN 111128678A
- Authority
- CN
- China
- Prior art keywords
- protective film
- particles
- mask
- layer
- isopropanol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 68
- 239000002245 particle Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 64
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004744 fabric Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005096 rolling process Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000007664 blowing Methods 0.000 abstract description 5
- 239000000428 dust Substances 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a method for removing particles on a mask protective film, which comprises the following steps: s1, finding the positions of the particles on the mask protective film; s2, dropwise adding isopropanol or absolute ethyl alcohol to the position of the particles; s3, enabling water drops of isopropanol or absolute ethyl alcohol to roll back and forth at the particles, and separating the particles adsorbed and coated on the surface of the protective film from the protective film; s4, sucking the water drops of the isopropanol or the absolute ethyl alcohol by using a dust-free cloth. According to the method for removing the particles on the mask protection film, provided by the invention, the dust particles with strong adsorbability are removed by rolling of isopropanol or absolute ethyl alcohol water drops to replace a nitrogen gun for blowing, so that the light transmittance of the protection film is prevented from being damaged due to overlarge nitrogen pressure, the steps are simple, convenient and practical, the production processes of film detachment, cleaning, detection, protection film installation and the like caused by the fact that the particles cannot be removed are reduced, the production period is shortened, and the production cost is saved.
Description
Technical Field
The invention belongs to the technical field of mask manufacturing, and relates to a method for removing particles on a mask protective film.
Background
The mask protection film is a transparent film adhered to the aluminum alloy frame to prevent dust from falling on one side of the mask pattern, and dust particles can only fall on the protection film just because of the protection of the film. Generally, the protective film consists of a transparent film, an aluminum alloy support and an adhesive, and the principle is that a layer of film with the light transmittance of more than 98% is arranged on one surface of a mask pattern, and the frame height of the film is 3.8-6.0 mm. If small particles fall off from the protective film, according to the imaging principle in physics, the particles attached to the protective film form a blurred image on the surface of the wafer during exposure, which interferes with local light intensity to a certain extent, and when the particles are large to a certain extent, shadows are left on the wafer, thereby affecting the wafer yield. Most of particles on the traditional removal protective film are blown by a nitrogen gun, the nitrogen blowing can only remove the particles with weak adsorbability, large particles are blown out easily to form fine particles on a beach, and the die protective film is blown out easily when the nitrogen pressure is large.
Disclosure of Invention
The invention aims to provide a method for removing particles on a mask protective film, which solves the technical problems in the prior art, achieves good effect of removing the particles, reduces the probability of film detachment caused by residual particles on the surface of the protective film, and reduces the production cost.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method for removing particles from a protective film of a mask, comprising the steps of: providing a mask plate, placing a protective film support on the mask plate, arranging a mask protective film on the protective film support, finding the particle position on the mask protective film in a bright environment, dripping an isopropanol solution to the particle position, slightly rolling the isopropanol solution at the particle position back and forth, separating the particles adsorbed on the surface of the protective film from the mask protective film by using the dissolution and permeability of the isopropanol or absolute ethyl alcohol, finally sucking the isopropanol water drops adsorbed with the particles by using dust-free cloth, blowing the surface of the mask protective film by using a nitrogen gun, volatilizing a little solution remained on the surface, guiding the isopropanol water drops to a frame surrounded by the edge of the mask plate in the sucking and drying process, and avoiding secondary pollution to the protective film because the dust-free cloth is not contacted with the mask protective film.
Furthermore, a YAMADA strong light lamp is turned on and irradiates towards the mask protective film to find the existence positions of particles on the mask protective film, the brightness of the YAMADA strong light lamp is 15-24W, and fine particles on the protective film cannot be seen clearly by a common strong light lamp.
Furthermore, a small amount of isopropanol with the purity of 90-99% is sucked by a clean dropper and is dripped to the position of the particles of the protective film, the isopropanol with the purity of 90-99% is required to be cleaned by an isopropanol solution with the purity of 90-99% before the dropper is used, the purity of the required isopropanol solution must reach 90-99%, and secondary pollution to the protective film is avoided.
Furthermore, a dust-free cloth with the cleanliness of 10000 grades is used for absorbing dry isopropanol water drops, the nitrogen pressure is adjusted to 170-245kPa, and the included angle between the nitrogen gun head and the plane of the mask protective film 1 is 30-60 degrees.
Further, the isopropanol solution may be replaced with absolute ethanol.
Further, the mask comprises a base layer, an anti-corrosion layer, a metal layer and a light resistance layer which are sequentially arranged from bottom to top, wherein the metal layer is arranged in a groove of the light resistance layer, the surfaces of the metal layer and the light resistance layer are flush, an oxidation layer with the thickness of 30-60nm is arranged between the metal layer and the light resistance layer, a buffer layer is arranged on one surface of the base layer away from the anti-corrosion layer, and the thickness of the buffer layer is 10-25 nm.
Furthermore, the base layer is made of quartz glass, soda glass or borosilicate glass, the thickness of the anti-corrosion layer is 20-40nm, the anti-corrosion performance of the mask is improved, the anti-corrosion layer is made of silicon dioxide, the metal layer is made of chromium, and the thickness of the metal layer is 90-100 nm.
Compared with the prior art, the invention has the beneficial effects that:
1. the rolling of the isopropanol or absolute ethyl alcohol water drops can remove dust particles with strong adsorbability, the risk of increasing production processes such as membrane detaching, cleaning, detecting, protective membrane installing and the like due to the fact that the particles on the protective membrane cannot be removed is reduced, the steps are simple, convenient and practical, the production period is shortened, and the production cost is saved;
2. and the isopropanol or absolute ethyl alcohol water drop rolling method is used for replacing a nitrogen gun for blowing, so that the light transmittance of the protective film is prevented from being damaged due to overlarge nitrogen pressure.
3. The mask plate comprises a base layer, an anti-corrosion layer, a metal layer and a light resistance layer which are sequentially arranged from bottom to top, wherein the metal layer is arranged in a groove of the light resistance layer, the surfaces of the metal layer and the light resistance layer are flush, an oxidation layer with the thickness of 30-60nm is arranged between the metal layer and the light resistance layer, and a buffer layer is arranged on one surface of the base layer away from the anti-corrosion layer.
Drawings
FIG. 1 is a side view of a reticle with a protective film installed according to the present invention;
FIG. 2 is a side view of the present invention finding the location of particles on a protective film under a powerful light;
FIG. 3 is a side view of the present invention dropping drops of isopropyl alcohol or absolute ethyl alcohol at the particle sites on the protective film;
FIG. 4 is a side view of a water droplet rolling on the protective film of the present invention;
FIG. 5 is a side view of the present invention with a dust free cloth to suck water droplets;
FIG. 6 is a schematic representation of the protective film of the present invention before removal of the particles;
FIG. 7 is a diagram of a protective film of the present invention with particles removed;
FIG. 8 is a schematic structural view of a reticle of the present invention;
wherein, 1-mask protective film; 2-granules; 3-protective film support; 4-mask plate; 5-a strong light; 6-a dropper; 7-water drop; 8-dust-free cloth; 9-a base layer; 10-an anti-corrosion layer; 11-a metal layer; 12-a photoresist layer.
Detailed Description
The embodiments of the present invention will be described in detail with reference to the accompanying drawings so that the advantages and features of the invention can be more easily understood by those skilled in the art, and the scope of the invention will be clearly and clearly defined.
As shown in fig. 1 to 8, a method for removing particles from a protective film of a mask, comprising the steps of:
providing a mask 4, placing a protective film support 3 on the mask 4, and arranging a mask protective film 1 on the protective film support 3;
step S1, using YAMADA strong light lamp, adjusting the brightness to 15-20W, finding the particle position on the mask protective film 1 in the bright environment, as shown in FIGS. 1-2 and 6;
step S2, sucking a small amount of isopropanol solution with the purity of 90-99% by using a clean dropper 6, dripping the isopropanol solution to the position of the particle 2, slightly shaking the mask plate 4 back and forth, rolling the isopropanol solution to and forth at the position of the particle 2, separating the particle 2 adsorbed and coated on the surface of the mask protective film 1 from the mask protective film 1 by using the dissolution and permeability of isopropanol or absolute ethyl alcohol, and taking away the particle and the isopropanol solution together, as shown in figures 3-4;
step S3, finally, sucking dry the isopropanol water drops 7 adsorbing the particles 2 by using a piece of dust-free cloth 8, wherein the isopropanol water drops 7 are the mixture of isopropanol and the particles 2 on the mask protective film, the isopropanol water drops 7 with the particles 2 are guided to a frame surrounded by the edge of the mask 4 in the sucking dry process, the dust-free cloth is not in contact with the mask protective film 1, and secondary pollution to the mask protective film 1 is avoided, as shown in FIGS. 5 and 7, the mask protective film 1 is clean and bright, no particles 2 or other impurities exist, a nitrogen gun can be used for blowing the surface of the mask protective film 1 according to actual requirements, the nitrogen pressure is adjusted to 172-245kPa, the included angle between the gun head of the nitrogen gun and the plane of the mask protective film 1 is 30-60 degrees, and a little solution remained on the surface volatilizes.
The invention can also use absolute ethyl alcohol to replace isopropanol solution, the purity of the absolute ethyl alcohol is 99.5 percent, the absolute ethyl alcohol is volatile, a nitrogen gun is not needed to blow the surface of the mask protective film 1, and the mask protective film 1 with smaller thinness is prevented from being blown by overlarge pressure.
As shown in FIG. 8, the mask 4 comprises a substrate 9, an anti-corrosion layer 10, a metal layer 11 and a photoresist layer 12, which are sequentially arranged from bottom to top, wherein the metal layer 11 is arranged in a groove of the photoresist layer 12, the surfaces of the metal layer 11 and the photoresist layer are flush, an oxide layer with the thickness of 30-60nm is arranged between the metal layer 11 and the photoresist layer 12, a buffer layer is arranged on one surface of the substrate 9 away from the anti-corrosion layer 10, the buffer layer is 10-25nm thick, the substrate 9 is quartz glass, soda glass or borosilicate glass, the anti-corrosion layer 10 is 20-40nm thick, the anti-corrosion performance of the mask is improved, the anti-corrosion layer 10 is made of silicon dioxide, the metal layer 11 is made of chromium, the metal layer 11 is 90-100nm thick, and the photoresist layer 12 is made of a photoresist material.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all technical fields in which the equivalent structures or equivalent processes performed by the contents of the present specification and the drawings are transformed, or directly or indirectly applied to other related technical parameters, etc. are included in the scope of the present invention.
Claims (8)
1. A method for removing particles from a protective film of a mask, comprising the steps of: providing a mask plate, placing a protective film support on the mask plate, arranging a mask protective film on the protective film support, finding the positions of particles on the mask protective film in a bright environment, dripping an isopropanol solution to the positions of the particles, rolling the isopropanol solution to and fro at the positions of the particles to separate the particles adsorbed on the surface of the protective film from the mask protective film, finally sucking the isopropanol water drops adsorbing the particles by using dust-free cloth, guiding the isopropanol water drops to a frame surrounded by the edge of the mask plate in the sucking and drying process, and enabling the dust-free cloth not to be in contact with the mask protective film.
2. The method as claimed in claim 1, wherein the YAMADA floodlight is turned on, and the YAMADA floodlight is irradiated toward the mask protective film to find the existence position of the particles on the mask protective film, and the brightness of the YAMADA floodlight is 15-24W.
3. The method as claimed in claim 1, wherein a dropping nozzle is used to drop a solution of isopropyl alcohol to the position of the particles, the solution of isopropyl alcohol has a purity of 90-99%, and the dropping nozzle is cleaned with the solution of isopropyl alcohol before use.
4. The method as claimed in claim 1, wherein a dust-free cloth with a cleanliness of 10000 grade is used to suck the water drops of isopropyl alcohol, and a nitrogen gun is used to purge the surface of the mask protective film, the nitrogen pressure is adjusted to 170-245kPa, and the angle between the tip of the nitrogen gun and the plane of the mask protective film is 30-60 °.
5. The method for removing particles from a protective film of a mask as claimed in any one of claims 1 to 4, wherein the isopropyl alcohol solution is replaced with absolute ethyl alcohol.
6. The method of claim 1, wherein the mask comprises a base layer, an anti-corrosion layer, a metal layer and a photoresist layer sequentially arranged from bottom to top, the metal layer is arranged in the groove of the photoresist layer and the surface of the metal layer and the surface of the photoresist layer are flush, and an oxide layer is arranged between the metal layer and the photoresist layer.
7. The method of claim 6, wherein the base layer is quartz glass, soda glass or borosilicate glass, the anti-corrosion layer is silicon dioxide, the anti-corrosion layer has a thickness of 20-40nm, the metal layer is chromium, and the metal layer has a thickness of 90-100 nm.
8. The method of claim 6, wherein the photoresist layer is made of photoresist material, a buffer layer is disposed on a surface of the base layer away from the etch-resistant layer, and the buffer layer has a thickness of 10-25 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911300671.9A CN111128678A (en) | 2019-12-17 | 2019-12-17 | Method for removing particles on mask protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911300671.9A CN111128678A (en) | 2019-12-17 | 2019-12-17 | Method for removing particles on mask protective film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111128678A true CN111128678A (en) | 2020-05-08 |
Family
ID=70499246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911300671.9A Pending CN111128678A (en) | 2019-12-17 | 2019-12-17 | Method for removing particles on mask protective film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111128678A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114433570A (en) * | 2022-04-06 | 2022-05-06 | 深圳市龙图光电有限公司 | Method and equipment for cleaning foreign matters under mask for semiconductor chip |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350842A (en) * | 1986-08-20 | 1988-03-03 | Mitsubishi Electric Corp | Cleaning method for photomask |
| JPH0774137A (en) * | 1993-07-05 | 1995-03-17 | Dainippon Screen Mfg Co Ltd | Method and apparatus for removing particle on substrate surface |
| US20040087158A1 (en) * | 2002-10-29 | 2004-05-06 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method and substrate processing apparatus |
| CN102426412A (en) * | 2011-07-12 | 2012-04-25 | 上海华力微电子有限公司 | Method for removing surface dust of mask plate |
| CN202794840U (en) * | 2012-10-11 | 2013-03-13 | 中芯国际集成电路制造(北京)有限公司 | Dust-proof protective device for photomask plate |
| CN104588370A (en) * | 2014-11-26 | 2015-05-06 | 上海华力微电子有限公司 | Method for removing pollution particles on photomask covering film |
| CN205816330U (en) * | 2016-06-30 | 2016-12-21 | 上海微电子装备有限公司 | A kind of mask cleaning device |
| CN106324983A (en) * | 2016-08-31 | 2017-01-11 | 无锡中微掩模电子有限公司 | Novel mask cleaning method |
| US20180330971A1 (en) * | 2017-05-09 | 2018-11-15 | Tokyo Electron Limited | Substrate cleaning apparatus and substrate cleaning method |
| CN109622503A (en) * | 2018-12-04 | 2019-04-16 | 天津津航技术物理研究所 | A kind of lossless cleaning method after laser gyro cavity optical manufacturing |
-
2019
- 2019-12-17 CN CN201911300671.9A patent/CN111128678A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6350842A (en) * | 1986-08-20 | 1988-03-03 | Mitsubishi Electric Corp | Cleaning method for photomask |
| JPH0774137A (en) * | 1993-07-05 | 1995-03-17 | Dainippon Screen Mfg Co Ltd | Method and apparatus for removing particle on substrate surface |
| US20040087158A1 (en) * | 2002-10-29 | 2004-05-06 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method and substrate processing apparatus |
| CN102426412A (en) * | 2011-07-12 | 2012-04-25 | 上海华力微电子有限公司 | Method for removing surface dust of mask plate |
| CN202794840U (en) * | 2012-10-11 | 2013-03-13 | 中芯国际集成电路制造(北京)有限公司 | Dust-proof protective device for photomask plate |
| CN104588370A (en) * | 2014-11-26 | 2015-05-06 | 上海华力微电子有限公司 | Method for removing pollution particles on photomask covering film |
| CN205816330U (en) * | 2016-06-30 | 2016-12-21 | 上海微电子装备有限公司 | A kind of mask cleaning device |
| CN106324983A (en) * | 2016-08-31 | 2017-01-11 | 无锡中微掩模电子有限公司 | Novel mask cleaning method |
| US20180330971A1 (en) * | 2017-05-09 | 2018-11-15 | Tokyo Electron Limited | Substrate cleaning apparatus and substrate cleaning method |
| CN109622503A (en) * | 2018-12-04 | 2019-04-16 | 天津津航技术物理研究所 | A kind of lossless cleaning method after laser gyro cavity optical manufacturing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114433570A (en) * | 2022-04-06 | 2022-05-06 | 深圳市龙图光电有限公司 | Method and equipment for cleaning foreign matters under mask for semiconductor chip |
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Application publication date: 20200508 |