CN111128650B - Directly-heated solid metal ion source - Google Patents
Directly-heated solid metal ion source Download PDFInfo
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- CN111128650B CN111128650B CN201811276370.2A CN201811276370A CN111128650B CN 111128650 B CN111128650 B CN 111128650B CN 201811276370 A CN201811276370 A CN 201811276370A CN 111128650 B CN111128650 B CN 111128650B
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- ion source
- arc chamber
- filament
- ring body
- face
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/242—Filament heating power supply or regulation circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
The invention discloses a directly-heated solid metal ion source which comprises an ion source arc chamber, a filament part and an aluminum-containing part, wherein the filament part comprises a filament end face, a spiral side face and a conductive part, the filament end face is formed by radially coiling a single filament, the spiral side face is formed by axially coiling the single filament, the conductive part is connected with the filament end face and the spiral side face, the aluminum-containing part comprises a first ring body and a second ring body which are mutually connected, one end of the ion source arc chamber is provided with a mounting hole, the second ring body is arranged in the mounting hole, the first ring body extends into the ion source arc chamber, the filament end face and the spiral side face are arranged in the first ring body, and the conductive part penetrates out of the second ring body and is positioned outside the ion source arc chamber. The invention simplifies the ion source and the peripheral power distribution result thereof, improves the reliability of the ion source operation, and simultaneously improves the service life of the Al ion source to a greater extent.
Description
Technical Field
The invention relates to an ion implanter, in particular to a directly-heated solid metal ion source.
Background
The SiC (silicon carbide) power electronic device is doped with P type on an N type SiC substrate, and the doped element can be B or Al. According to research, the P-type doped element has better effect of selecting Al than B. Ion implantation is the only doping means with high controllability, and currently, an ion implanter for sputtering an Al ion source is generally adopted for Al ion implantation. The sputtering Al ion source of the ion implanter is a solid ion source which is provided with aluminum-containing solid in the ion source and is ionized into Al + by sputtering Al of ions, while the ion source for the general semiconductor production line is a gas ion source which is provided with process gas in the ion source to ionize, the two ion sources have larger difference in principle and structure, and the solid ion source has larger difference with the gas ion source in the aspects of service life and stability. The existing gas ion source can not generate Al ions and can not be used for manufacturing SiC power device chips. The existing solid ion source is an indirect-heating type ion source, short-circuit faults are easy to occur in use, the service life of the ion source is short, and the existing solid ion source becomes a bottleneck in the operation of an Al ion implanter.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the direct-heating type solid metal ion source which simplifies the structure of the ion source and the peripheral power distribution of the ion source, improves the running reliability of the ion source and greatly prolongs the service life of the Al ion source.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a directly-heated solid metal ion source, includes ion source arc chamber, filament part and aluminiferous part, the filament part includes filament terminal surface, spiral side and conductive part, the filament terminal surface is radially coiled by single filament and is formed, the spiral side is formed by single filament axial spiral, the conductive part is connected with filament terminal surface and spiral side, aluminiferous part includes interconnect's first ring body and second ring body, ion source arc chamber one end has the mounting hole, the second ring body is adorned in the mounting hole, first ring body stretches into in the ion source arc chamber, filament terminal surface and spiral side are located first ring body, the conductive part is worn out the second ring body and is located the ion source arc chamber outdoors.
As a further improvement of the above technical solution, preferably, the filament end face and the spiral side face are formed by the same filament spiral, and both ends of the filament extend in parallel to one end away from the filament end face and form the conductive portion.
As a further improvement of the above technical solution, preferably, the ion source arc chamber is made of molybdenum material.
As a further improvement of the above technical solution, preferably, the ion source arc chamber is composed of an arc chamber leading-out top plate, an arc chamber bottom plate, two arc chamber end plates and two arc chamber side plates, and the mounting hole is formed in one of the arc chamber end plates.
As a further improvement of the above technical solution, preferably, the inner side of the arc chamber end plate is provided with two clamping grooves, the outer side of the arc chamber end plate is provided with two positioning grooves, two ends of the arc chamber side plate are clamped in the clamping grooves, two cylindrical pins are respectively arranged on the inner sides of two ends of the arc chamber leading-out top plate, two cylindrical pins are correspondingly arranged on two ends of the arc chamber bottom plate, and each cylindrical pin is clamped in each positioning groove.
As a further improvement of the above technical solution, preferably, four corners of the arc chamber leading-out top plate are respectively provided with a tightening groove.
As a further improvement of the above technical solution, preferably, the arc chamber extraction top plate is provided with an ion extraction hole, and the arc chamber bottom plate is provided with an ion source air inlet hole; and a reflecting pole mounting hole of the ion source is arranged on the other arc chamber end plate.
As a further improvement of the above technical solution, preferably, the diameter of the first ring body is larger than the diameter of the second ring body.
Compared with the prior art, the invention has the advantages that:
the direct-heating solid metal aluminum ion source has the advantages that the aluminum-containing component is added through the newly designed spiral filament component, the filament component has two functions, the aluminum-containing component is heated, the thermal electrons of ionized gas are provided for the arc chamber, the filament component and the aluminum-containing component are integrated into a whole, the direct-heating solid metal aluminum ion source is efficient, the structure of the ion source and the peripheral power distribution of the ion source is simplified, the running reliability of the ion source is improved, and meanwhile, the service life of the Al ion source is prolonged to a greater extent.
Drawings
FIG. 1 is a schematic view of the structure of an arc chamber of an ion source according to the present invention.
FIG. 2 is a schematic view of the structure of the ion source arc chamber of the present invention (II).
Fig. 3 is a schematic view (one) of the structure of the filament part in the present invention.
Fig. 4 is a schematic structural view of the filament part of the present invention (ii).
FIG. 5 is a schematic view of the structure of an aluminum-containing member according to the present invention.
Fig. 6 is a view showing the fitting relationship between the filament part and the aluminum-containing part in the present invention.
Fig. 7 is a schematic structural diagram (one) of an arc chamber leading-out top plate of an ion source arc chamber in the invention.
Fig. 8 is a schematic structural view (ii) of an arc chamber exit ceiling of an ion source arc chamber in accordance with the present invention.
Fig. 9 is a schematic view of an arc chamber end plate of the ion source arc chamber of the present invention.
Fig. 10 is a temperature field of the filament assembly after thermal stabilization in the present invention.
FIG. 11 is a temperature field of an aluminum-containing part after thermal stabilization in accordance with the present invention.
The reference numerals in the figures denote:
1. an ion source arc chamber; 101. mounting holes; 102. an ion extraction aperture; 103. an ion source inlet aperture; 104. a repeller mounting hole; 11. the arc chamber leads out a top plate; 111. tensioning the groove; 12. an arc chamber floor; 13. an arc chamber end plate; 131. a card slot; 132. positioning a groove; 14. an arc chamber side plate; 2. a filament member; 21. a filament end face; 22. a helical side; 23. a conductive portion; 3. an aluminum-containing component; 31. a first ring body; 32. a second ring body; 4. and (7) a cylindrical pin.
Detailed Description
The invention is described in further detail below with reference to the drawings and specific examples.
As shown in fig. 1 to 10, the direct-heating solid metal ion source of this embodiment includes an ion source arc chamber 1, a filament part 2 and an aluminum-containing part 3, the filament part 2 includes a filament end face 21, a spiral side face 22 and a conductive part 23, the filament end face 21 is formed by radially coiling a single filament, the spiral side face 22 is formed by axially coiling a single filament, the conductive part 23 is connected with the filament end face 21 and the spiral side face 22, the aluminum-containing part 3 includes a first ring body 31 and a second ring body 32 connected with each other, one end of the ion source arc chamber 1 has a mounting hole 101, the second ring body 32 is installed in the mounting hole 101, the first ring body 31 extends into the ion source arc chamber 1, the filament end face 21 and the spiral side face 22 are installed in the first ring body 31, and the conductive part 23 penetrates out of the second ring body 32 and is located outside the ion source arc chamber 1.
The second ring 32 of the aluminum-containing part 3 is mainly used for fixation, and the first ring 31 is mainly Al for providing an ion source+The filament end face 21 of the spiral filament part 2 mainly emits thermal electrons and is source electrons for arc striking of an ion source arc chamber, and the spiral side face 22 mainly heats the aluminum-containing part 3, so that the aluminum-containing part 3 is easily heated by F in the arc chamber+Corroding to produce Al+Thereby ionizing to form Al+The conductive portion 23 functions to fix the entire filament member 2, to ensure the relative positional relationship between the filament member 2 and the aluminum-containing member 3, and also functions to connect a power supply, to ensure the passage of the heating current of the filament member 2. The invention uses a new spiral filament in the gas ion source, adds an aluminum-containing part 3, and integrates the filament part 2 and the aluminum-containing part 3 into a whole, thus forming a high-efficiency direct-heating solid metal aluminum ion source, simplifying the structure of the ion source and the peripheral power distribution thereof, improving the running reliability of the ion source, and greatly prolonging the service life of the Al ion source.
In this embodiment, the filament end face 21 and the spiral side face 22 are formed by the same filament spiral, and both ends of the filament extend in parallel to the end away from the filament end face 21 and form the conductive portion 23. The conductive portion 23 is formed integrally with the filament.
In this embodiment, the diameter of the first ring 31 (front ring) is greater than the diameter of the second ring 32 (rear ring), which facilitates the mounting of the rear ring on the ion source arc chamber 1.
In this embodiment, the ion source arc chamber 1 is made of molybdenum. The whole structure of the ion source arc chamber 1 is detachable, and only the groove and the pin are adopted for positioning connection. Specifically, the ion source arc chamber 1 is composed of an arc chamber leading-out top plate 11, an arc chamber bottom plate 12, two arc chamber end plates 13 and two arc chamber side plates 14, and the mounting hole 101 is formed in one of the arc chamber end plates 13. The inner side of the arc chamber end plate 13 is provided with two clamping grooves 131, the outer side of the arc chamber end plate is provided with two positioning grooves 132, the two ends of the arc chamber side plate 14 are clamped in the clamping grooves 131, the inner sides of the two ends of the arc chamber leading-out top plate 11 are respectively provided with two cylindrical pins 4, the two ends of the arc chamber bottom plate 12 are correspondingly provided with two cylindrical pins 4, and each cylindrical pin 4 is clamped in each positioning groove 132. The four corners that roof 11 was drawn forth to the arc chamber are equipped with taut groove 111 respectively, draw forth roof 11 through the taut arc chamber of a drag hook (not shown in the figure) of taking the spring for whole clamp is tight, and the drag hook card is in taut groove 111, and whole arc chamber need not can fasten through screw or bolt, and when accepting high temperature, the arc chamber has certain expansion space (if screw or bolt locking, meet high temperature and will arouse the arc chamber and warp). An ion leading-out hole 102 is arranged on the arc chamber leading-out top plate 11, ions generated in the ion source are led out from the hole, and an ion source air inlet 103 is arranged on the arc chamber bottom plate 12 and used for introducing gas containing F; the other arc chamber end plate 13 is provided with a repeller mounting hole 104 for the ion source, which serves to increase the plasma density in the ion source.
When the ion source is used, the two conductive portions 23 are respectively connected to two poles of the filament power supply, fig. 10 shows a temperature field (temperature unit) of the filament after thermal stabilization, and fig. 11 shows a temperature field of the aluminum-containing member 3 after thermal stabilization, at which time the heating power of the filament is about 1.4 KW. The two figures show that the filament temperature has reached the temperature for starting the ion source, and the power is equivalent to the power of the conventional ion source.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (7)
1. A directly-heated solid metal ion source, characterized by: the ion source arc chamber comprises an ion source arc chamber (1), a filament part (2) and an aluminum-containing part (3), wherein the filament part (2) comprises a filament end face (21), a spiral side face (22) and a conductive part (23), the filament end face (21) is formed by radially coiling a single filament, the spiral side face (22) is formed by axially coiling the single filament, the conductive part (23) is connected with the filament end face (21) and the spiral side face (22), the aluminum-containing part (3) comprises a first ring body (31) and a second ring body (32) which are mutually connected, one end of the ion source arc chamber (1) is provided with a mounting hole (101), the second ring body (32) is arranged in the mounting hole (101), the first ring body (31) extends into the ion source arc chamber (1), the filament end face (21) and the spiral side face (22) are arranged in the first ring body (31), the conductive part (23) penetrates out of the second ring body (32) and is positioned outside the ion source arc chamber (1), filament terminal surface (21) and spiral side (22) are formed by same root filament spiral, the both ends of filament are to keeping away from filament terminal surface (21) one end parallel extension, and constitute electrically conductive part (23).
2. The direct heating solid metal ion source according to claim 1, characterized in that: the ion source arc chamber (1) is made of molybdenum material.
3. The direct heated solid metal ion source according to claim 1 or 2, wherein: the ion source arc chamber (1) is composed of an arc chamber leading-out top plate (11), an arc chamber bottom plate (12), two arc chamber end plates (13) and two arc chamber side plates (14), and the mounting hole (101) is formed in one of the arc chamber end plates (13).
4. The direct heating solid metal ion source according to claim 3, characterized in that: the inner side of the arc chamber end plate (13) is provided with two clamping grooves (131), the outer side of the arc chamber end plate is provided with two positioning grooves (132), two ends of the arc chamber side plate (14) are clamped in the clamping grooves (131), two cylindrical pins (4) are respectively arranged on the inner sides of two ends of the arc chamber leading-out top plate (11), two ends of the arc chamber bottom plate (12) are correspondingly provided with the two cylindrical pins (4), and each cylindrical pin (4) is clamped in each positioning groove (132).
5. The direct heating solid metal ion source according to claim 4, characterized in that: four corners of the arc chamber leading-out top plate (11) are respectively provided with a tensioning groove (111).
6. The direct heating solid metal ion source according to claim 4, characterized in that: an ion leading-out hole (102) is formed in the arc chamber leading-out top plate (11), and an ion source air inlet hole (103) is formed in the arc chamber bottom plate (12); and a repeller mounting hole (104) of the ion source is arranged on the other arc chamber end plate (13).
7. The direct heating type solid metal ion source according to claim 1 or 2, characterized in that: the diameter of the first ring body (31) is larger than that of the second ring body (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811276370.2A CN111128650B (en) | 2018-10-30 | 2018-10-30 | Directly-heated solid metal ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811276370.2A CN111128650B (en) | 2018-10-30 | 2018-10-30 | Directly-heated solid metal ion source |
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| Publication Number | Publication Date |
|---|---|
| CN111128650A CN111128650A (en) | 2020-05-08 |
| CN111128650B true CN111128650B (en) | 2022-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811276370.2A Active CN111128650B (en) | 2018-10-30 | 2018-10-30 | Directly-heated solid metal ion source |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821677A (en) * | 1996-12-05 | 1998-10-13 | Eaton Corporation | Ion source block filament with laybrinth conductive path |
| KR20000031240A (en) * | 1998-11-04 | 2000-06-05 | 윤종용 | Arc chamber of equipment for injecting ion |
| JP2000223039A (en) * | 1999-01-29 | 2000-08-11 | Sony Corp | Ion source of ion implanter |
| KR20050050000A (en) * | 2003-11-24 | 2005-05-27 | 삼성전자주식회사 | A source head arc chamber of ion implantation machine |
| KR20050058755A (en) * | 2003-12-12 | 2005-06-17 | 동부아남반도체 주식회사 | Insulator for protecting filament of the ion implantor |
| CN105655217A (en) * | 2015-12-14 | 2016-06-08 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering metal aluminum ion source of radio frequency bias voltage power supply |
| TWM554221U (en) * | 2017-08-10 | 2018-01-11 | 有成精密股份有限公司 | Filament, cathode module and ion implantation equipment |
-
2018
- 2018-10-30 CN CN201811276370.2A patent/CN111128650B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821677A (en) * | 1996-12-05 | 1998-10-13 | Eaton Corporation | Ion source block filament with laybrinth conductive path |
| KR20000031240A (en) * | 1998-11-04 | 2000-06-05 | 윤종용 | Arc chamber of equipment for injecting ion |
| JP2000223039A (en) * | 1999-01-29 | 2000-08-11 | Sony Corp | Ion source of ion implanter |
| KR20050050000A (en) * | 2003-11-24 | 2005-05-27 | 삼성전자주식회사 | A source head arc chamber of ion implantation machine |
| KR20050058755A (en) * | 2003-12-12 | 2005-06-17 | 동부아남반도체 주식회사 | Insulator for protecting filament of the ion implantor |
| CN105655217A (en) * | 2015-12-14 | 2016-06-08 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering metal aluminum ion source of radio frequency bias voltage power supply |
| TWM554221U (en) * | 2017-08-10 | 2018-01-11 | 有成精密股份有限公司 | Filament, cathode module and ion implantation equipment |
Non-Patent Citations (1)
| Title |
|---|
| SiC 高温高能离子注入机的离子源热场研究;彭立波;《电子工业专用设备》;20170620(第264期);第39-58页、图1-16 * |
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| CN111128650A (en) | 2020-05-08 |
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