CN209785968U - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
- Publication number
- CN209785968U CN209785968U CN201920330248.2U CN201920330248U CN209785968U CN 209785968 U CN209785968 U CN 209785968U CN 201920330248 U CN201920330248 U CN 201920330248U CN 209785968 U CN209785968 U CN 209785968U
- Authority
- CN
- China
- Prior art keywords
- electrode
- leads
- enlarged
- electrode leads
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
the utility model relates to the field of semiconductor technology, especially, relate to a improve emitting diode of problem is concentrated to electric current, its is through the terminal end of lead wire and initiating terminal design increase portion at the electrode to set for the relative position of each increase portion, in order to reach the better effect of electric current extension, prevent that the electric current from concentrating the burning that leads to and dying the lamp problem.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a can promote emitting diode of antistatic ability.
Background
The LED chip is widely applied to various fields such as fluorescent lamps for illumination, bulb lamps, indoor and outdoor large and small space display screens, television backlights, mobile phone backlights, household appliance air conditioner display lamps, vehicle indicating lamps and the like due to the advantages of high brightness, low voltage, low energy consumption, long service life and the like. However, in the terminal application process, due to factors such as poor design of a power supply of the LED chip module, or unstable mains supply, accidental large current surge can impact the LED chip, which causes the problem of lamp death caused by burning of the LED chip.
particularly, for a product designed by the ME02 process, when a chip is subjected to unstable large current impact, the current density at the tail end of a lead of a P electrode is too high, which causes local overheating and lead burning, thereby causing the problem that an LED chip is weakened in reliability and shortened in service life, or even dies, specifically referring to fig. 1, fig. 1 is an SEM (electron microscope) diagram of an ME02 core particle, wherein the core particle comprises a substrate 100 and a light-emitting epitaxial layer 200, and the light-emitting epitaxial layer 200 sequentially comprises a first semiconductor layer, a multiple quantum well layer and a second semiconductor layer from top to bottom; the LED device further comprises a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer, and when the first electrode and the second electrode are electrified and used, the tail end of the first electrode lead and the starting end of the second electrode lead are easily burnt due to the fact that current cannot be well dispersed, and therefore the service life of the LED device is influenced.
Disclosure of Invention
In order to solve the above problems and improve the antistatic ability of the LED, a light emitting diode includes:
The light-emitting epitaxial layer sequentially comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer from top to bottom;
the first electrode is positioned on the first semiconductor layer and electrically connected with the first semiconductor layer, the first electrode at least comprises a first electrode welding line area and two first electrode leads connected with the first electrode, and the two leads extend along a horizontal shaft in a first direction; and
A second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer, the second electrode at least including a second electrode bonding wire region and a second electrode lead connected to the first electrode, the second electrode lead extending along the horizontal axis in a second direction, the second direction being opposite to the first direction, the second electrode lead extending between the two first electrode leads;
The method is characterized in that: the secondary tail ends of the two first electrode leads and the starting end of the second electrode lead are provided with enlarged parts, and the positions of the enlarged parts on the first electrode leads and the positions of the enlarged parts on the second electrode leads are relatively positioned on the same horizontal line.
Preferably, at least three first electrode leads are provided, at least two second electrode leads are provided, and the three first electrode leads and the two second electrode leads are distributed at intervals.
Preferably, the secondary end portions of the two second electrode leads and the starting portion of at least one first electrode lead are provided with enlarged portions, and the enlarged portions of the secondary end portions of the second electrode leads and the enlarged portions of the starting portion of the first electrode leads are positioned on the same horizontal line.
Preferably, the starting end portion of the first electrode lead positioned between the second electrode leads is provided with an enlarged portion.
Preferably, wherein the starting portions of the three first electrode lines are each provided with an enlarged portion.
Preferably, the secondary ends of the three first electrode leads are provided with enlarged parts, the initial parts of the two second electrode leads are provided with enlarged parts, and the positions of the enlarged parts on the first electrode leads and the positions of the enlarged parts on the second electrode leads are relatively on the same horizontal line.
Preferably, the light emitting diode further comprises a protective layer covering the epitaxial multiple quantum well layer, a first opening serving as a conductive channel is arranged below the first electrode lead, and a second opening serving as a conductive channel is arranged below the second electrode lead.
Preferably, the first electrode lead enlarged part is disposed at the first opening or on the surface of the light emitting epitaxial layer.
Preferably, the enlarged portion of the second electrode lead is disposed at the second opening or on the surface of the light-emitting epitaxial layer.
Preferably, the number of the first openings is 1 or more, and the number of the second openings is 2 or more.
The utility model discloses design increase portion at the inferior end of electrode lead wire and initiating terminal to set for the relative position of each increase portion, in order to reach the better effect of electric current extension, prevent that the burning that the electric current concentrates and lead to from dying the lamp problem.
Drawings
FIG. 1 is a SEM diagram of a prior art LED core particle.
Fig. 2 is a schematic top view of a light emitting diode according to embodiment 1 of the present invention.
3 fig. 3 3 3 is 3 a 3 schematic 3 view 3 of 3 a 3 cross 3- 3 sectional 3 front 3 view 3 of 3 a 3- 3 a 3 surface 3 of 3 a 3 light 3 emitting 3 diode 3 according 3 to 3 embodiment 3 1 3 of 3 the 3 present 3 invention 3. 3
Fig. 4 is a schematic structural diagram of a cross-sectional front view of a B-B surface of a light emitting diode according to embodiment 1 of the present invention.
Fig. 5 is a schematic top view of a light emitting diode according to embodiment 2 of the present invention.
Fig. 6 is a schematic top view of a light emitting diode according to a variation of embodiment 2 of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The scope of the present invention is not limited to the embodiments described below, and the embodiments of the present invention may be modified into various other embodiments.
Example 1
Referring to fig. 2, fig. 3 and fig. 4, the present invention provides a light emitting diode, including:
a substrate 100, which may be a patterned substrate 100 or a flat substrate 100, has at least one surface for epitaxial layer deposition, and may be sapphire, silicon, or silicon carbide.
A light emitting epitaxial layer 200 on the substrate 100, the light emitting epitaxial layer 200 sequentially including a first semiconductor layer 210, a multiple quantum well layer 220 and a second semiconductor layer 230 from top to bottom; the first semiconductor layer 210 has an electrical property opposite to that of the second semiconductor layer, one for providing electrons and the other for providing holes. And the mqw layer 220 is a recombination radiation center of electron-hole.
a first electrode disposed on the first semiconductor layer 210 and electrically connected to the first semiconductor layer 210, the first electrode at least comprising a first electrode bonding wire area 410 and two first electrode leads 420 connected to the first electrode, the two leads extending along a horizontal axis in a first direction; and
A second electrode disposed on the second semiconductor layer 230 and electrically connected to the second semiconductor layer 230, the second electrode at least comprising a second electrode bonding wire region 510 and a second electrode lead 520 connected to the first electrode, the second electrode lead 520 extending along a horizontal axis in a second direction, the second direction being opposite to the first direction, the second electrode lead 520 extending between two first electrode leads 420; the first electrode lead 420 and the second electrode lead 520 are distributed at intervals
the light emitting diode further includes a passivation layer 300 covering the epitaxial MQW layer 220, a first opening 430 serving as a conductive channel is disposed below the first electrode lead 420, and the first electrode lead 420 is electrically contacted with the first semiconductor layer 210 through the first opening 430. Meanwhile, a second opening 530 serving as a conductive channel is disposed below the second electrode lead 520, and the second electrode lead 520 is electrically connected to the second semiconductor layer 230 through the second opening 530;
Furthermore, the secondary ends of the two first electrode leads 420 and the starting end of the second electrode lead 520 are respectively provided with an enlarged part (440, 540), and the positions of the enlarged part 440 on the first electrode lead 420 and the enlarged part 450 on the second electrode lead 520 are relatively on the same horizontal line. In this embodiment, a plurality of first openings 430 are disposed below the first electrode lead 420, and a portion of the first electrode lead 420 is disposed on the passivation layer 300, and a portion of the first electrode lead is disposed at the first openings 430 and electrically connected to the first semiconductor layer 210. Similarly, a plurality of second openings 530 are disposed below the second electrode lead 520, and a portion of the second electrode lead 520 is disposed on the protective layer 300 and another portion is disposed at the second openings 530.
The enlarged portion 440 of the first electrode lead 420 is disposed at the first opening 430 or on the surface of the light emitting epitaxial layer 200, and the enlarged portion 540 of the second electrode lead 520 is disposed at the second opening 530 or on the surface of the light emitting epitaxial layer 200.
The enlarged portion 440 of the first electrode lead is disposed at the first opening 430 at the second end of the first electrode lead 420, and the enlarged portion 540 of the second electrode lead 520 is disposed at a position where the lead is located on the surface of the light emitting epitaxial layer 200. The positions of the enlarged portions 440 of the second ends of the two first electrode leads and the enlarged portions 540 of the starting ends of the second electrode leads 520 are relatively on the same horizontal line.
The utility model discloses end and the initiating terminal design increase portion (440, 450) in the lead wire of electrode to set for the relative position of each increase portion, in order to reach the better effect of electric current extension, prevent that the burning that the electric current concentrated and lead to from dying the lamp problem.
Example 2
referring to fig. 4, the present invention provides a light emitting diode, including:
A substrate 100, such as a patterned substrate 100 or a flat substrate 100, has at least one surface for epitaxial layer deposition, and may be sapphire, silicon, or silicon carbide.
A light emitting epitaxial layer 200 on the substrate 100, the light emitting epitaxial layer 200 sequentially including a first semiconductor layer 210, a multiple quantum well layer 220 and a second semiconductor layer 230 from top to bottom; the first semiconductor layer 210 has an electrical property opposite to that of the second semiconductor layer, one for providing electrons and the other for providing holes. And the mqw layer 220 is a recombination radiation center of electron-hole.
A first electrode disposed on the first semiconductor layer 210 and electrically connected to the first semiconductor layer 210, the first electrode at least including a first electrode bonding wire region 410 and two first electrode leads 420 connected to the first electrode, the two first electrode leads 420 extending along a horizontal axis in a first direction; and
a second electrode disposed on the second semiconductor layer 230 and electrically connected to the second semiconductor layer 230, the second electrode at least comprising a second electrode bonding wire region 510 and a second electrode lead 520 connected to the first electrode, the second electrode lead 520 extending along a horizontal axis in a second direction, the second direction being opposite to the first direction, the second electrode lead 520 extending between two first electrode leads 420; the first electrode lead 420 and the two second electrode leads 520 are spaced apart from each other.
The light emitting diode further includes a passivation layer 300 covering the epitaxial MQW layer 220, a first opening 430 serving as a conductive channel is disposed below the first electrode lead 420, and the first electrode lead 420 is electrically connected to the first semiconductor layer 210 through the first opening 430. Meanwhile, a second opening 530 is disposed below the second electrode lead 520 to serve as a conductive path, and the second electrode lead 520 is electrically connected to the second semiconductor layer 230 through the second opening 530.
Further, there are at least three first electrode leads 420, at least two second electrode leads 520, and the three first electrode leads 420 and the two second electrode leads 520 are spaced apart from each other. The secondary terminal portions of the two second electrode leads 520 and the starting portion of at least one first electrode lead 420 are respectively provided with enlarged portions (440, 540), and the positions of the enlarged portions 540 of the secondary terminal portions of the second electrode leads 520 and the enlarged portions 440 of the starting portion of the first electrode leads 420 are relatively on the same horizontal line. The starting end portion of the first electrode lead 420 located between the second electrode leads 520 is provided with an enlarged portion 440. The beginning portions of the three first electrode leads are each provided with an enlarged portion 440.
As another embodiment of the present invention, referring to fig. 6, the secondary ends of the three first electrode leads are provided with the enlarged portions, the starting portions of the two second electrode leads are provided with the enlarged portions, and the positions of the enlarged portions on the first electrode lead 420 and the enlarged portions on the second electrode lead 520 are relatively on the same horizontal line.
The utility model discloses increase the part at electrode lead wire time end and initiating terminal design to set for the relative position of each increase part, in order to reach the better effect of electric current extension, prevent that the burning that the electric current concentrates and leads to from dying the lamp problem.
The above embodiments are only used for illustrating the present invention, and are not used for limiting the present invention, and those skilled in the art can make various modifications and changes to the present invention without departing from the spirit and scope of the present invention, so that all equivalent technical solutions also belong to the scope of the present invention, and the patent protection scope of the present invention should be determined by the scope of the claims.
Claims (10)
1. a light emitting diode comprising:
The light-emitting epitaxial layer sequentially comprises a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer from top to bottom;
The first electrode is positioned on the first semiconductor layer and electrically connected with the first semiconductor layer, the first electrode at least comprises a first electrode welding line area and two first electrode leads connected with the first electrode, and the two leads extend along a horizontal shaft in a first direction; and
A second electrode disposed on the second semiconductor layer and electrically connected to the second semiconductor layer, the second electrode at least including a second electrode bonding wire region and a second electrode lead connected to the first electrode, the second electrode lead extending along the horizontal axis in a second direction, the second direction being opposite to the first direction, the second electrode lead extending between the two first electrode leads;
The method is characterized in that: the secondary tail ends of the two first electrode leads and the starting end of the second electrode lead are provided with enlarged parts, and the positions of the enlarged parts on the first electrode leads and the positions of the enlarged parts on the second electrode leads are relatively positioned on the same horizontal line.
2. A light emitting diode according to claim 1 wherein: the first electrode leads are at least three, the second electrode leads are at least two, and the three first electrode leads and the two second electrode leads are distributed at intervals.
3. A light emitting diode according to claim 2, wherein: the secondary terminal parts of the two second electrode leads and the starting part of at least one first electrode lead are provided with enlarged parts, and the positions of the enlarged parts of the secondary terminal parts of the second electrode leads and the positions of the enlarged parts of the starting parts of the first electrode leads are relatively on the same horizontal line.
4. A light emitting diode according to claim 3 wherein: the starting end portion of the first electrode lead positioned between the second electrode leads is provided with an enlarged portion.
5. A light emitting diode according to claim 3 wherein: and the initial parts of the three first electrode wires are provided with enlarged parts.
6. a light emitting diode according to claim 2, wherein: the secondary tail ends of the three first electrode leads are provided with enlarged parts, the initial parts of the two second electrode leads are provided with enlarged parts, and the positions of the enlarged parts on the first electrode leads and the positions of the enlarged parts on the second electrode leads are relatively positioned on the same horizontal line.
7. A light emitting diode according to claim 1 wherein: the light-emitting diode further comprises a protective layer covering the epitaxial multi-quantum well layer, a first opening serving as a conductive channel is arranged below the first electrode lead, and a second opening serving as a conductive channel is arranged below the second electrode lead.
8. The led of claim 7, wherein: the first electrode lead wire enlarged part is arranged at the first opening or on the surface of the light-emitting epitaxial layer.
9. the led of claim 7, wherein: the enlarged part of the second electrode lead is arranged at the second opening or on the surface of the light-emitting epitaxial layer.
10. the led of claim 7, wherein: the number of the first openings is greater than or equal to 1, and the number of the second openings is greater than or equal to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920330248.2U CN209785968U (en) | 2019-03-15 | 2019-03-15 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920330248.2U CN209785968U (en) | 2019-03-15 | 2019-03-15 | Light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209785968U true CN209785968U (en) | 2019-12-13 |
Family
ID=68798089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920330248.2U Active CN209785968U (en) | 2019-03-15 | 2019-03-15 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209785968U (en) |
-
2019
- 2019-03-15 CN CN201920330248.2U patent/CN209785968U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101239853B1 (en) | Ac light emitting diode | |
| EP2408030B1 (en) | Light emitting diode | |
| CN105576100B (en) | Light emitting device and lighting system | |
| CN108352429A (en) | Luminescent device and light emitting device package including luminescent device | |
| US10247365B2 (en) | LED filament and LED filament light containing the same | |
| US20100295089A1 (en) | Light emitting device package and method for fabricating the same | |
| US20060284191A1 (en) | Light emitting diode | |
| US20120037946A1 (en) | Light emitting devices | |
| CN207831285U (en) | A kind of flexibility filament and LED lamp | |
| CN210607306U (en) | Light-emitting diode | |
| CN209785968U (en) | Light-emitting diode | |
| CN215578550U (en) | LED chip structure | |
| US20100078671A1 (en) | Nitride based semiconductor light emitting device | |
| KR20200099821A (en) | Semiconductor device | |
| EP2439794B1 (en) | Light emitting device | |
| CN210052741U (en) | LED lamp bead and display screen | |
| CN209389031U (en) | A kind of LED component | |
| CN103606609B (en) | A kind of manufacture method of light-emitting diodes pipe electrode | |
| US10340307B1 (en) | Light emitting diode having current confinement structure | |
| US8729572B2 (en) | Light emitting diode package having a voltage stabilizing module consisting of two doping layers | |
| CN214012962U (en) | All-round luminous LED lamp | |
| CN210778594U (en) | Full-color LED lamp bead | |
| CN216648340U (en) | Keep just installing wafer of epitaxial layer under N electrode | |
| CN209026751U (en) | A kind of Multifunctional LED lamp lamp bracket being easily installed | |
| KR100658042B1 (en) | LED combined with resistence |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |