TWM554221U - Filament, cathode module and ion implantation equipment - Google Patents

Abstract

A filament suited for an ion source is provided. The filament includes a conductive portion and two contact portions. The conductive portion has a first end and a second end. The contact portions are separated and are arranged in the same direction, wherein the contact portions are connected to the first end and the second end of the conductive portion without seams, respectively. Besides, a cathode module and an ion implantation equipment are also provided.

Description

Filament, cathode module and ion implanter

The novel creation relates to a filament and a cathode module and an ion implanter including the same.

Ion Implantation technology not only provides various semiconductor doping requirements, but because it can accurately control the doping content and distribution of dopants, ion implantation technology has become the most important blending process in semiconductor devices. Quality preset technology.

The ion implanter is a semiconductor process equipment used to implement ion implantation technology, and functions to guide charged particles with energy into the wafer. The ion source is one of the main parts of the ion implanter. The basic principle is to use a special gas to ionize the gas molecules by thermal electrons at a suitable low pressure, thus producing an ion implanter. The dopant ions that need to be used.

Further, the ion source heats the cathode by heating a filament such that the filament emits hot electrons to bombard a cathode. After the cathode is heated, hot electrons are emitted into the ion source cavity, and the hot electrons collide with the reaction gas in the ion source cavity to generate ions. The current filament is made by a combination of tantalum and tungsten.

However, during the heating process of the filament, since the joint between the two materials is heated, the coefficient of thermal expansion is different due to the difference in materials, causing the filament to warp, and the ion implanter must be stopped and cannot operate. In addition, as the filament is heated for a long period of time, the filament reacts with the highly reactive reactant gas or dissociated ions to cause corrosion of the filament, which causes the junction of the filament to be easily broken, thereby increasing the maintenance cost of the ion implanter.

The novel creation provides a filament that has a long service life.

The novel creation provides a cathode module comprising the filament described above with a long service life.

The novel creation provides an ion implanter comprising the cathode module described above, which can effectively reduce maintenance costs.

The filament created by the novel is suitable for an ion source. The filament includes a conductive portion and two contact portions. The conducting portion has a first end and a second end. The contacts are separated from each other and arranged in the same direction, wherein the contacts are seamlessly connected to the first end and the second end of the conducting portion, respectively.

In an embodiment of the present invention, each of the contact portions has a diameter of between 0.6 mm and 2.5 mm.

In an embodiment of the present invention, the conductive portion includes a plurality of curved segments, and the curved segments are continuously bent and connected between the contact portions.

The cathode module created by the novel is suitable for an ion source. The cathode module includes a cathode, a filament and a clamping mechanism. The cathode has a receiving groove. The filament is disposed in the receiving groove of the cathode, and the filament comprises a conducting portion and two contacts. The conducting portion has a first end and a second end. The contacts are separated from each other and arranged in the same direction, wherein the contacts are seamlessly connected to the first end and the second end of the conducting portion, respectively. The clamping mechanism comprises two clamping members for respectively holding the contact portions of the filaments so that the conducting portions of the filaments extend into the receiving slots of the cathode.

In an embodiment of the present invention, each of the clamping members includes a first clamping member and a second clamping member. The first clamping member includes a groove, a first receiving portion and a first locking portion. The second clamping member includes a second receiving portion and a second locking portion. Each of the contact portions of the filament is located in an accommodating space defined by the first accommodating portion and the second accommodating portion. One end of the second clamping member is located in the recess of the first clamping member, and the second fastening portion of the second clamping member and the first fastening portion of the first clamping member are fastened to each other and fixed to the first On the clamp.

In an embodiment of the present invention, each of the contact portions has a diameter of between 0.6 mm and 2.5 mm.

In an embodiment of the present invention, the conductive portion includes a plurality of curved segments, and the curved segments are continuously bent and connected between the contact portions.

The ion implanter of the present invention comprises an ion source and a processing chamber. The ion source is adapted to generate an ion beam, and the ion source comprises a tank and a cathode module. The cathode mold is assembled on one side of the casing, and the cathode module comprises a cathode, a filament and a clamping mechanism. The cathode has a receiving groove. The filament is disposed in the receiving groove, and the filament comprises a conducting portion and two contacts. The conducting portion has a first end and a second end. The contacts are separated from each other and arranged in the same direction, wherein the contacts are seamlessly connected to the first end and the second end of the conducting portion, respectively. The clamping mechanism comprises two clamping members for respectively holding the contact portions of the filaments so that the conducting portions of the filaments extend into the receiving slots of the cathode. The processing chamber is connected to the ion source and is located on the transport path of the ion beam.

In an embodiment of the present invention, the ion implanter further includes a magnetic field analyzer, a deceleration component, and a charge neutralizer. The magnetic field analyzer, the deceleration component, and the charge neutralizer are disposed between the ion source and the processing chamber and on the transmission path of the ion beam.

In an embodiment of the present invention, each of the clamping members includes a first clamping member and a second clamping member. The first clamping member includes a groove, a first receiving portion and a first locking portion. The second clamping member includes a second receiving portion and a second locking portion. Each of the contact portions of the filament is located in an accommodating space defined by the first accommodating portion and the second accommodating portion. One end of the second clamping member is located in the recess of the first clamping member, and the second fastening portion of the second clamping member and the first fastening portion of the first clamping member are fastened to each other and fixed to the first On the clamp.

In an embodiment of the present invention, each of the contact portions has a diameter of between 0.6 mm and 2.5 mm.

In an embodiment of the present invention, the conductive portion includes a plurality of curved segments, and the curved segments are continuously bent and connected between the contact portions.

Based on the above, the filament created by the present invention is formed by seamlessly connecting the conductive portion and the two contact portions, that is, the filament is an integrally formed structure. Compared with the conventional filaments formed by the combination of tantalum and tungsten, the filament created by the novel is not easy to warp during heating, and is less prone to breakage and has a long service life. The cathode module created by the present invention also has a long service life due to the use of the above filament. The ion implanter created by the present invention has the advantages of reducing maintenance cost because it does not require frequent maintenance due to the use of the above cathode module.

The above described features and advantages of the present invention will become more apparent and understood from the following description.

FIG. 1 is a schematic view of a filament of an embodiment of the present invention. Referring to FIG. 1 , in the embodiment, the filament 120 includes a conducting portion 122 and two contact portions 124 . The conducting portion 122 has a first end 122a1 and a second end 122a2. The contact portions 124 are separated from each other and disposed in the same direction D, wherein the contact portions 124 are seamlessly connected to the first end 122a1 and the second end 122a2 of the conductive portion 122, respectively. In other words, the conductive portion 122 and the contact portion 124 are integrally formed, that is, the filament 120 is integrally formed. Here, the conductive portion 122 and the contact portion 124 are made of the same material, and are, for example, tungsten. Compared with the filament formed by the combination of the two materials of tantalum and tungsten, the filament 120 of the present embodiment is not easy to warp during heating, and is less likely to be broken, and has a long service life. Preferably, the diameter of the contact portion 124 of the embodiment is, for example, between 0.6 mm and 2.5 mm, but the present invention is not limited thereto.

More specifically, the conductive portion 122 of the present embodiment further includes a plurality of curved segments 122a3, and the curved segments 122a3 are continuously bent and connected between the contact portions 124. As shown in FIG. 1 , the shape of the conductive portion 122 may be, for example, a quake-like needle shape, but is not limited thereto. In particular, as the area of the conductive portion 122 is larger, the heat dissipation area is also larger, so that the heating efficiency of the filament 120 is better.

2 is a schematic view of an ion source according to an embodiment of the present invention. 3 is an exploded view of the ion source of FIG. 2. 4 is a partially enlarged schematic view of the ion source of FIG. 2. Referring to FIG. 2, FIG. 3 and FIG. 4 simultaneously, in the present embodiment, the ion source 100 is adapted to generate an ion beam. The ion source 100 includes a case 100b and a cathode module 100a. The cathode module 100a is mounted on one side of the casing 100b. The cathode module 100a includes a cathode 110, the filament 120 described above, and a clamping mechanism 130. The cathode 110 has a receiving groove 112. The clamping mechanism 130 includes two clamping members 132 for respectively holding the contact portions 124 of the filament 120 such that the conducting portion 122 of the filament 120 extends into the receiving groove 112 of the cathode 110. In the present embodiment, the distance between the filament 120 and the bottom of the accommodating groove 112 of the cathode 110 is, for example, about 0.7 mm, which is not limited thereto.

More specifically, the conducting portion 122 of the filament 120 of the present embodiment is disposed in the receiving groove 112 of the cathode 110 for heating the cathode 110 and causing the cathode 110 to emit a plurality of hot electrons, and is connected to the bottom of the casing 100b. The reaction gases poured into the tank 100b interact to generate a plurality of ions, and the ions are extracted out of the tank 100b via the extraction holes 100b1 located at the top of the tank 100b. When the ion source generates an ion beam 100, for example, the pressure inside the tank 100b is between 1x10 ^-5 Torr to 5x10 ^-5 Torr.

Moreover, referring to FIG. 3 and FIG. 4 again, each of the clamping members 132 of the embodiment further includes a first clamping member 132a and a second clamping member 132b, wherein the material of the clamping member 132 is, for example, molybdenum. , but not limited to this. The first clamping member 132a includes a first receiving portion 132a1, a first locking portion 132a2 and a recess 132a3, and the second clamping member 132b includes a second receiving portion 132b1 and a second locking portion 132b2. The contact portions 124 of the filaments 120 are respectively located in an accommodating space S defined by the first accommodating portion 132a1 and the second accommodating portion 132b1. Further, the size of the accommodating space S defined by the first accommodating portion 132a1 and the second accommodating portion 132b1 may be equal to or slightly larger than the volume occupied by the contact portion 124 of the filament 120 in the accommodating space S. In addition, one end 132b3 of the second clamping member 132b is located in the recess 132a3 of the first clamping member 132a, and the second locking portion 132b2 of the second clamping member 132b and the first buckle of the first clamping member 132a The portions 132a2 are fastened to each other and fixed to the first holder 132a. In the present embodiment, since the cathode module 100a has a single material and integrally formed filament 120, it can be improved to a life of 2 times.

FIG. 5 is a schematic diagram of an ion implanter according to an embodiment of the present invention. Referring to FIG. 5, in the present embodiment, the ion implanter 10 includes the ion source 100 described above and a processing chamber 200. The processing chamber 200 is coupled to the ion source 100 and is located on the transport path L of the ion beam. The processing chamber 200 is a high vacuum chamber for ion implantation with a cryo-pump to maintain a high vacuum of the processing chamber 200.

Furthermore, the ion implanter 10 of the present embodiment may further include a magnetic field analyzer 300, a deceleration component 400, and a charge neutralizer 500. The magnetic field analyzer 300 analyzes the magnetic field of the ion beam to screen the ions to be implanted and to prevent other ions from passing. The deceleration assembly 400 is adapted to reduce the energy of the ion beam to avoid energy contamination and affect the depth of the ion implantation wafer. The charge neutralizer 500 is adapted to neutralize the positive charge on the surface of the wafer to prevent the charge on the surface of the wafer from affecting the path of the ion beam, thereby affecting the uniformity of the ion implantation wafer. In the present embodiment, as shown in FIG. 5, the magnetic field analyzer 300, the deceleration component 400, and the charge neutralizer 500 are sequentially disposed between the ion source 100 and the processing chamber 200, and are located in the ion beam transmission path L. on. Since the ion implanter 10 of the present embodiment has the cathode module 100a described above, it does not require frequent maintenance and has the advantage of reducing maintenance costs.

In summary, the filament created by the present invention is formed by seamlessly connecting the conductive portion and the two contact portions, that is, the filament is an integrally formed structure. Compared with the conventional filaments formed by the combination of tantalum and tungsten, the filament created by the novel is not easy to warp during heating, and is less prone to breakage and has a long service life. The cathode module created by the present invention also has a long service life due to the use of the above filament. The ion implanter created by the present invention has the advantages of reducing maintenance cost because it does not require frequent maintenance due to the use of the above cathode module.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

100‧‧‧Ion source
100b‧‧‧ cabinet
100a‧‧‧ Cathode Module
100b1‧‧‧ extraction hole
110‧‧‧ cathode
112‧‧‧ accommodating slots
120‧‧‧filament
122‧‧‧Transmission Department
122a1‧‧‧ first end
122a2‧‧‧ second end
122a3‧‧‧Bend section
124‧‧‧Contacts
130‧‧‧Clamping mechanism
132‧‧‧Clamping parts
132a‧‧‧First clamping part
132a1‧‧‧First accommodation
132a2‧‧‧First buckle
132a3‧‧‧ Groove
132b‧‧‧Second grip
132b1‧‧‧Second housing
132b2‧‧‧Second buckle
132b3‧‧‧ one end
200‧‧‧Processing chamber
300‧‧‧ Magnetic Field Analyzer
400‧‧‧Deceleration components
500‧‧‧ Charge Neutralizer
D‧‧‧ Direction
L‧‧‧ transmission path
S‧‧‧ accommodating space

FIG. 1 is a schematic view of a filament of an embodiment of the present invention. 2 is a schematic view of an ion source according to an embodiment of the present invention. 3 is an exploded view of the ion source of FIG. 2. 4 is a partially enlarged schematic view of the ion source of FIG. 2. FIG. 5 is a schematic diagram of an ion implanter according to an embodiment of the present invention.

120‧‧‧filament

122‧‧‧Transmission Department

122a1‧‧‧ first end

122a2‧‧‧ second end

122a3‧‧‧Bend section

124‧‧‧Contacts

D‧‧‧ Direction

Claims (12)

A filament suitable for an ion source, the filament comprising: a conducting portion having a first end and a second end; and two contact portions separated from each other and disposed in the same direction, wherein the contacts are seamlessly connected To the first end and the second end of the conducting portion. The filament of claim 1, wherein each of the contacts has a diameter of between 0.6 mm and 2.5 mm. The filament of claim 1, wherein the conductive portion comprises a plurality of curved segments, the curved segments being continuously bent and connected between the contacts. A cathode module is suitable for an ion source. The cathode module comprises: a cathode having a receiving groove; a filament disposed in the receiving groove of the cathode, the filament comprising: a conducting portion having a a first end and a second end; and the two contact portions are separated from each other and disposed in the same direction, wherein the contact portions are respectively seamlessly connected to the first end and the second end of the conductive portion; and a clamping The mechanism includes two clamping members for respectively holding the contact portions of the filament so that the conductive portion of the filament protrudes into the receiving groove of the cathode. The cathode module of claim 4, wherein each of the clamping members comprises a first clamping member and a second clamping member, the first clamping member comprising a groove and a first receiving portion. And a first latching portion, the second clamping member includes a second receiving portion and a second latching portion, wherein the contact portions of the filament are located at the first receiving portion and the second receiving portion In a defined accommodating space, one end of the second clamping member is located in the recess of the first clamping member, and the second fastening portion of the second clamping member and the first clamping portion The first fastening portions of the piece are fastened to each other and fixed to the first clamping member. The cathode module of claim 4, wherein each of the contact portions of the filament has a diameter of between 0.6 mm and 2.5 mm. The cathode module of claim 4, wherein the conductive portion of the filament comprises a plurality of curved segments, the curved segments being continuously bent and connected between the contacts. An ion implantation machine comprising: an ion source adapted to generate an ion beam, the ion source comprising: a case; and a cathode module mounted on one side of the case, the cathode module comprising: a cathode having a receiving groove; a filament disposed in the receiving groove, the filament comprising: a conducting portion having a first end and a second end; and two contact portions separated from each other and in the same direction Arranging, wherein the contact portions are respectively seamlessly connected to the first end and the second end of the conducting portion; and a clamping mechanism comprising two clamping members respectively clamping the contact portions of the filament The conductive portion of the filament extends into the receiving groove of the cathode; and a processing chamber is coupled to the ion source and located on the transport path of the ion beam. The ion implanter of claim 8, further comprising: a magnetic field analyzer disposed between the ion source and the processing chamber and located on a transmission path of the ion beam; a deceleration component, Disposed between the ion source and the processing chamber and located on the transmission path of the ion beam; and a charge neutralizer disposed between the ion source and the processing chamber and located at the ion beam On the path. The ion implanter of claim 8, wherein each of the clamping members comprises a first clamping member and a second clamping member, the first clamping member comprising a groove, a first a first latching portion and a second latching portion, the second latching portion includes a second receiving portion and a second latching portion, wherein the respective receiving portions of the filament are located in the first receiving portion and the second receiving portion In an accommodating space defined, one end of the second clamping member is located in the recess of the first clamping member, and the second fastening portion of the second clamping member and the first clamping member The first fastening portions of the holding members are fastened to each other and fixed to the first clamping member. The ion implanter of claim 8, wherein each of the contacts of the filament has a diameter of between 0.6 mm and 2.5 mm. The ion implanter of claim 8, wherein the conductive portion of the filament comprises a plurality of curved segments that are continuously bent and connected between the contacts.