CN111106024A - Detection method of flow field distribution - Google Patents
Detection method of flow field distribution Download PDFInfo
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- CN111106024A CN111106024A CN201811260048.0A CN201811260048A CN111106024A CN 111106024 A CN111106024 A CN 111106024A CN 201811260048 A CN201811260048 A CN 201811260048A CN 111106024 A CN111106024 A CN 111106024A
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- cleaning
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- bare wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention provides a detection method of flow field distribution, which comprises the steps of cleaning a bare wafer in a groove body of a cleaning machine platform by a wet method; and accurately reflecting the flow field distribution of the tank body by detecting the concentration distribution of the iron ions on the surface of the bare wafer, thereby playing a vital role in selecting a proper cleaning machine and analyzing the source and position of the wafer defect.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a flow field distribution detection method.
Background
Because there are many factors that cause defects in the process of semiconductor field, it is very important to determine the specific process steps that cause defects when engineers perform yield analysis to improve the process conditions.
In the manufacturing process of a wafer, wet cleaning is an indispensable process, the wet cleaning is usually performed in a cleaning machine, and the cleaning condition of the cleaning machine relates to whether the wafer is cleaned and the concentration of defects in the subsequent process of the wafer, but there is no method for directly obtaining the cleaning condition of the cleaning machine at present.
Disclosure of Invention
The invention aims to provide a detection method of flow field distribution, which is used for detecting the flow field distribution of wet cleaning of a cleaning machine.
In order to achieve the above object, the present invention provides a method for detecting flow field distribution, which is used for detecting flow field distribution of a tank body of a cleaning machine in a wet cleaning process, and is characterized by comprising:
providing a bare wafer, and carrying out wet cleaning on the bare wafer in a groove body of the cleaning machine table;
and detecting the concentration distribution of the iron ions on the surface of the bare wafer, and representing the flow field distribution of the tank body by utilizing the concentration distribution of the iron ions on the surface of the bare wafer.
Optionally, the wet cleaning is wet chemical cleaning, and the wet chemical cleaning includes chemical reagent cleaning, rapid dump rinsing, and drying in sequence.
Optionally, the cleaning condition distribution of the bare wafer is obtained according to the flow field distribution of the tank, so that the defect prone area of the subsequent process is marked on the bare wafer through the cleaning condition distribution.
Optionally, the defect-prone region is the region where the concentration of iron ions on the surface of the bare wafer after wet cleaning is greater than 1E10atoms/cm2The area of (a).
Optionally, after the wet cleaning of the bare wafer is performed, before the detecting of the concentration distribution of iron ions on the surface of the bare wafer, the method for detecting the flow field distribution further includes:
and carrying out a thermal oxidation process on the bare wafer.
Optionally, a thermal oxidation process is performed on the bare wafer to form an oxide layer on the bare wafer, where the thickness of the oxide layer is less than or equal to 100 nm.
Optionally, the temperature of the thermal oxidation process performed on the bare wafer is between 600 ℃ and 1000 ℃.
Optionally, the thermal oxidation process includes a furnace tube oxidation process or a rapid thermal processing process.
Optionally, the concentration distribution of the iron ions on the surface of the bare wafer is detected by using an iron ion detection technology.
Optionally, the method for detecting the flow field distribution further includes providing the bare wafers in the tank bodies of different cleaning machines respectively for wet cleaning, and obtaining the cleaning conditions of the different cleaning machines according to the flow field distribution of the tank bodies of the cleaning machines.
In the detection method of the flow field distribution, provided by the invention, a bare wafer is cleaned in a groove body of a cleaning machine platform by a wet method; and accurately reflecting the flow field distribution of the tank body by detecting the concentration distribution of the iron ions on the surface of the bare wafer, thereby playing a vital role in selecting a proper cleaning machine and analyzing the source and position of the wafer defect.
Drawings
FIG. 1 is a graph illustrating the concentration distribution of iron ions on a wafer surface that has not been wet cleaned according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a wafer wet cleaning process using a type I cleaning machine station according to an embodiment of the present invention;
fig. 3 is a graph showing the concentration distribution of iron ions on the surface of a wafer after the wafer is wet-cleaned by using a type i cleaning machine according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a wafer wet cleaning process using a type II cleaning station according to an embodiment of the present invention;
fig. 5 is a diagram illustrating a concentration distribution of iron ions on a wafer surface after wet cleaning of the wafer by using a type ii cleaning machine according to an embodiment of the present invention;
fig. 6 is a flowchart of a method for detecting a flow field distribution according to an embodiment of the present invention;
wherein the reference numerals are:
three supporting points of a K1, K2 and K3-I type cleaning machine manipulator on the wafer;
k '1, K' 2, K '3 and K' 4-four supporting points on a bare wafer of a manipulator of a II type cleaning machine platform;
A-I type cleaning machine platform defect prone area;
a defect prone area of an A' -II type cleaning machine;
b-region B; b '-region B'.
Detailed Description
The inventors have found that wet cleaning typically involves placing wafers in sequence in various tanks of a wafer cleaning station for processing, such as: the wafer cleaning device comprises a cleaning tank, a rinsing tank, a multifunctional tank, a drying tank and the like, wherein the flow field of a wafer in the tank body can be changed by the actions of entering the tank body, leaving the tank body, supplementing acid, changing acid or supplementing water and the design of the tank body, so that the corresponding flow field distribution (the spatial distribution of fluid movement in the tank body at a certain moment) is formed, the flow field of fluid in the tank body influences the cleaning condition of wet cleaning, the flow field distribution of the tank body is directly related to the cleaning condition, and the cleaning condition is related to the generation condition of subsequent process defects. Further, for the wafer, the surface of the wafer has iron ion distribution, and the distribution diagram of the concentration of the iron ions on the surface of the wafer can be obtained by measuring the voltage capacitance characteristics of the surface of the wafer. Fig. 1 is a graph showing the concentration distribution of iron ions on the wafer surface not subjected to wet cleaning (the darker the color region, the greater the concentration of iron ions), and it can be seen from fig. 1 that the concentration distribution of iron ions on the wafer surface not subjected to wet cleaning is random and has no specific law.
Through further research, the inventor finds that the iron ion concentration on the surface of the wafer is relatively uniform after the wafer is cleaned by a wet method, and the iron ion concentration distribution on the surface of the wafer after cleaning can reflect the flow field distribution of the tank body.
Specifically, as shown in fig. 2, a mechanical arm for grabbing the wafer by the i-type cleaning machine is used for performing wet chemical cleaning on the wafer (only cleaning is performed, and other steps such as acid exchange, rinsing and the like are not performed), three supporting points (K1, K2, K3) are arranged on the wafer, an included angle of 52.5 degrees is formed between every two adjacent supporting points and the circle center, the wafer is grabbed and then vertically placed into the cleaning tank at a certain speed to perform wet cleaning on the wafer, the flow field trajectory of the cleaning agent in the cleaning tank can be analyzed to be approximately as shown by a curve on the wafer in fig. 2, and the weak cleaning capability of the i-type cleaning machine on the region B can be approximately seen according to the flow field trajectory of the cleaning agent. And then measuring to obtain a concentration distribution diagram of iron ions on the upper surface of the wafer, wherein due to the influence of a mechanical arm supporting point, a defect prone zone (a zone in which iron ions are concentrated, and a zone in which defects are concentrated) is generated in wet cleaning, as shown in fig. 3, it can be seen from fig. 3 that the zone with the highest concentration of iron ions is the defect prone zone a, that is, the concentration distribution of iron ions on the upper surface of the wafer can accurately represent the flow field distribution of the tank body of the type i cleaning machine.
As shown in fig. 4, a mechanical arm for grabbing a wafer by using a type ii cleaning machine station performs wet cleaning (only cleaning, without performing other steps such as acid exchange, rinsing, etc.) on the wafer, the mechanical arm has four supporting points (K '1, K' 2, K '3, K' 4) on the wafer, an included angle of 30 degrees is formed between the two supporting points in the middle and the center of the circle (15 degrees is formed between the two supporting points in the middle and the center of the circle), an included angle of 50 degrees is formed between the two supporting points in the edge and the center of the circle, the wafer is grabbed and then vertically placed in a cleaning tank at a certain speed to perform wet cleaning on the wafer, it can be analyzed that the flow field distribution trace of the cleaning agent in the cleaning tank is approximately as shown by the curve on the wafer in fig. 4, according to the flow field track of the cleaning agent, the weak cleaning capability of the II-type cleaning machine platform on the area B' can be obtained. And then measuring to obtain a concentration distribution diagram of the iron ions on the upper surface of the wafer, as shown in fig. 5, as can be seen from fig. 5, the region with the maximum concentration of the iron ions is the defect prone region a', and the concentration distribution of the iron ions on the upper surface of the wafer can accurately represent the flow field distribution of the tank body of the type ii cleaning machine.
Based on the method, the invention provides a method for detecting flow field distribution, which comprises the steps of cleaning a bare wafer in a wet method in a cleaning machine table; and accurately reflecting the flow field distribution of the tank body by detecting the concentration distribution of the iron ions on the surface of the bare wafer, thereby playing a vital role in selecting a proper cleaning machine and analyzing the source and position of the wafer defect.
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 6, the present embodiment provides a method for detecting flow field distribution in a wet cleaning machine, including:
s1: providing a bare wafer, and carrying out wet cleaning on the bare wafer in a groove body of the cleaning machine table;
s2: and detecting the concentration distribution of the iron ions on the surface of the bare wafer, and representing the flow field distribution of the tank body by utilizing the concentration distribution of the iron ions on the surface of the bare wafer.
Specifically, step S1 is first performed to provide a bare wafer, which refers to a wafer without any pattern on the surface thereof, so as to facilitate the subsequent detection of iron ions, it can be understood that the concentration distribution of iron ions on the surface of the bare wafer is randomly distributed and has no specific rule, as shown in fig. 1, and then the bare wafer is subjected to wet cleaning in the cleaning machine (at this time, a normal cleaning process may be performed, such as sequentially performing chemical cleaning, fast dump rinsing, and drying processes). In this embodiment, the wet cleaning is wet chemical cleaning.
Next, a thermal oxidation process, such as a furnace oxidation process or a Rapid Thermal Processing (RTP) process, may be performed on the bare wafer, where the temperature of the thermal oxidation process is between 600 ℃ and 1000 ℃, so that the 2-valent iron ions on the surface of the bare wafer are oxidized into trivalent iron ions, which is more beneficial to subsequent detection of the iron ions. Meanwhile, the thermal oxidation process can also form an oxide layer on the bare wafer, and the thickness of the oxide layer is very thin (less than or equal to 100nm), so that the influence on the accuracy of iron ion detection is very small.
And step S2 is executed to detect the concentration distribution of the iron ions on the surface of the bare wafer, so as to represent the flow field distribution of the tank body when the cleaning machine performs wet cleaning by using the concentration distribution of the iron ions on the surface of the bare wafer. In this embodiment, the concentration distribution of the iron ions on the surface of the bare wafer is detected by using an iron ion detection (SPV) technique, but not limited thereto, and any technique capable of detecting the concentration distribution of the iron ions on the wafer may be used.
The concentration distribution of the iron ions on the surface of the bare wafer can represent the flow field distribution of the tank body when the cleaning machine is used for wet cleaning, and after the flow field distribution of the tank body is obtained, the cleaning quality of the wet cleaning of the cleaning machine can be obtained according to the flow field distribution of the tank body, as shown in fig. 3 and 5. It can be understood that the larger the area of the defect prone area on the bare wafer after cleaning is, the more unfavorable the wet cleaning of the wafer is, and whether the cleaning machine platform meets the control requirement can be judged through the area of the defect prone area. For example, the area of the defect prone area a in fig. 3 is smaller than the area of the defect prone area a 'in fig. 5, and the wet cleaning effect of the type i cleaning machine is better than that of the type ii cleaning machine, so that the wet cleaning quality of various cleaning machines can be compared according to the area of the defect prone area a'. Or the flow field distribution of the tank body can also be used for selecting a proper cleaning machine, for example, when the area of the defect prone area accounts for less than 30% of the area of the surface of the bare wafer, the cleaning machine is considered to meet the control requirement, and when the area of the defect prone area accounts for more than or equal to 30% of the area of the surface of the bare wafer, the cleaning machine does not meet the control requirement, certainly, the control requirement is not unique, and can be adjusted according to actual conditions, for example, the position or the uniformity of the defect prone area can also serve as the standard of the control requirement.
Further, in the actual cleaning process, if the area and position of the defect prone region are changed due to the change of the flow field distribution caused by the processes of adding the cleaning agent or adding the ionized water, the measured result after the actual cleaning should be used as the standard.
It should be understood that the defect-prone region referred to herein refers to a region on the surface of the bare wafer where the concentration of iron ions is greater than a predetermined range, which may be greater than or equal to 1E10atoms/cm2E.g. at 1E10atoms/cm2～50E10atoms/cm2The scope of (2) is also applicable to other ranges, and the present invention is not limited thereto.
In summary, in the method for detecting flow field distribution provided in the embodiment of the present invention, the bare wafer is cleaned by the wet method in the cleaning machine; and accurately reflecting the flow field distribution of the wet cleaning by detecting the concentration distribution of the iron ions on the surface of the bare wafer, thereby playing a vital role in selecting a proper cleaning machine and analyzing the source and the position of the wafer defect.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A detection method of flow field distribution is used for detecting the flow field distribution of a groove body of a cleaning machine table in a wet cleaning process, and is characterized by comprising the following steps:
providing a bare wafer, and carrying out wet cleaning on the bare wafer in a groove body of the cleaning machine table;
and detecting the concentration distribution of the iron ions on the surface of the bare wafer, and representing the flow field distribution of the tank body by utilizing the concentration distribution of the iron ions on the surface of the bare wafer.
2. The method for detecting the flow field distribution according to claim 1, wherein the wet cleaning is wet chemical cleaning, and the wet chemical cleaning comprises chemical reagent cleaning, rapid dump rinsing and drying treatment which are sequentially performed.
3. The method according to claim 1, wherein the cleaning condition distribution of the bare wafer is obtained according to the flow field distribution of the tank, so as to mark a defect prone region of a subsequent process on the bare wafer according to the cleaning condition distribution.
4. The method for detecting the flow field distribution according to claim 3, wherein the defect-prone region is a region on the surface of the bare wafer after wet cleaning, in which the concentration of iron ions is largeAt 1E10atoms/cm2The area of (a).
5. The method for detecting the distribution of a flow field according to claim 1, wherein after the bare wafer is subjected to wet cleaning and before the concentration distribution of iron ions on the surface of the bare wafer is detected, the method for detecting the distribution of a flow field further comprises:
and carrying out a thermal oxidation process on the bare wafer.
6. The method according to claim 5, wherein a thickness of the oxide layer is less than or equal to 100nm when the thermal oxidation process is performed on the bare wafer to form an oxide layer on the bare wafer.
7. The method according to claim 6, wherein the temperature of the bare wafer undergoing the thermal oxidation process is between 600 degrees Celsius and 1000 degrees Celsius.
8. The method for detecting flow field distribution according to claim 7, wherein said thermal oxidation process comprises a furnace tube oxidation process or a rapid thermal processing process.
9. The method according to claim 1, wherein the concentration distribution of the iron ions on the surface of the bare wafer is detected by using an iron ion detection technique.
10. The method according to any one of claims 1 to 9, wherein the method further comprises providing bare wafers in the tanks of different cleaning machines for wet cleaning, and obtaining the cleaning conditions of the different cleaning machines according to the flow field distribution of the tank of each cleaning machine.
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| CN201811260048.0A CN111106024B (en) | 2018-10-26 | 2018-10-26 | Flow field distribution detection method |
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| CN201811260048.0A CN111106024B (en) | 2018-10-26 | 2018-10-26 | Flow field distribution detection method |
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Cited By (1)
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| CN113837983A (en) * | 2020-06-08 | 2021-12-24 | 长鑫存储技术有限公司 | Wafer defect analysis method, system, equipment and medium |
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