CN106033733A - Method for real-time monitoring metal contamination of semiconductor wafer - Google Patents
Method for real-time monitoring metal contamination of semiconductor wafer Download PDFInfo
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- CN106033733A CN106033733A CN201510120898.0A CN201510120898A CN106033733A CN 106033733 A CN106033733 A CN 106033733A CN 201510120898 A CN201510120898 A CN 201510120898A CN 106033733 A CN106033733 A CN 106033733A
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- 238000000034 method Methods 0.000 title claims abstract description 245
- 238000012544 monitoring process Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 48
- 239000002184 metal Substances 0.000 title claims abstract description 48
- 238000011109 contamination Methods 0.000 title abstract 2
- 230000003647 oxidation Effects 0.000 claims abstract description 43
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims description 48
- 238000009792 diffusion process Methods 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 32
- 238000012360 testing method Methods 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 40
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 27
- 238000010586 diagram Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000013643 reference control Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- -1 ammonium peroxide Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009183 running Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
A method for monitoring metal contamination of a semiconductor wafer in real time is provided, which comprises: performing a rapid thermal oxidation process on the wafer; and measuring the surface photovoltage of the wafer after the rapid thermal oxidation process.
Description
Technical field
The invention relates to a kind of monitoring method of manufacture of semiconductor, and partly lead in particular to one
The metallic pollution immediately monitoring method of body wafer.
Background technology
In manufacture of semiconductor, the element characteristic of goods can be caused bad shadow by the metallic pollution of wafer
Ring.Such as, goods are carried out heat treatment, then the heavy metal such as ferrum (Fe) or nickel (Ni) can be made by diffusion
And enter in silicon wafer, and make band gap is formed deep can rank (level) and as carrier trap center
Or recombination center, thus become the pn junction leakage in element or the reason of life-span minimizing.Therefore,
For the degree of metallic pollution in monitoring program, and seek a kind of can immediately monitoring and the monitoring of high-reliability
Method.
In CIS, the tolerance to metal is limited, if in the fabrication process by metal
Pollute the quality that then can affect photograph.At complementary metal oxide semiconductor (CMOS) image sensor (CMOS
Image sensor, CIS) in processing procedure, it is that the PN junction utilizing epitaxy region (Epitaxy area) is as sense
Light district.If the metallic pollution state only detecting wafer surface is the metallic pollution being insufficient to represent whole wafer
Situation, it is necessary to the metallic pollution that can monitor photosensitive area further can meet the metal of CIS processing procedure
Monitoring mechanism.
But, processing procedure the metallic pollution caused is broadly divided into two classes: a class is the processing procedure before heat treatment,
Another kind of, it is heat treatment processing procedure itself.The reason of the metallic pollution caused by heat treatment processing procedure itself may
Cause for the metal impurities that are mixed into from heat treatment environment；Or by heat treatment processing procedure because of with polluter (example
As comprised microgranule or heat treatment carrier, pedestal, fulcrum, the various metal clamps etc. of metal ingredient)
Contact, and make the metal impurities of polluter be attached to semiconductor wafer, and in heat treatment processing procedure
Diffuse to cause metallic pollution near contact portion.
In recent years, as in the wafer of semiconductor substrate, in order to strengthen intrinsic gettering (Intrinsic
, inside it, there is oxygen precipitate (main body microdefect, Bulk Micro to high-density in function gettering)
Defect；Or become the tiny flaw of its growth core BMD).But, the metallic pollution meeting of semiconductor wafer
Reduce life-span or the measured value of diffusion length, and the defect of above-mentioned BMD or small also can reduce the life-span or
The measured value of diffusion length.So the defect of BMD or small in semiconductor wafer and wafer surface
State, the measured value size of diffusion length measured by surface photovoltage can be affected, and make measured value
Mistake also causes metallic pollution whether erroneous judgement.
Summary of the invention
The present invention provides a kind of metallic pollution immediately monitoring method of semiconductor wafer, effectively by measuring
Surface photovoltage carrys out the pollution level of immediately monitoring process work bench, fathoms deeper, can be used for CIS system
In the metal monitoring of journey, and production cost can be reduced by reusing the wafer of monitoring.
The metallic pollution immediately monitoring method of the semiconductor wafer of the present invention, including: wafer is carried out quickly
Thermal oxidation process (process)；And the described wafer after process rapid thermal oxidation is carried out surface photovoltage
Measure.
In one embodiment of the invention, described wafer is re-used in metallic pollution immediately monitoring.
In one embodiment of the invention, described wafer doping has boron atom.
In one embodiment of the invention, processing procedure (process) the temperature model of described process rapid thermal oxidation
Enclose is 600 DEG C to 1050 DEG C.
In one embodiment of the invention, the oxidated layer thickness that described process rapid thermal oxidation is generated
ForExtremely
In one embodiment of the invention, another wafer is further included as with reference to control wafer.
The metallic pollution immediately monitoring method of the semiconductor wafer of the present invention, including: the metallic pollution of wafer
Reference value is tested, and processing procedure (process) processes the metallic pollution immediately monitoring test of board；Wherein, institute
State the metallic pollution reference value test of wafer, including: wafer is carried out wafer cleaning process, to described crystalline substance
Sheet carries out process rapid thermal oxidation and the described wafer after process rapid thermal oxidation is carried out surface photoelectricity
The measurement of pressure, with the concentration of the diffusion length Yu metallic atom that obtain the metallic atom of described wafer using as
Reference value；The metallic pollution immediately monitoring of described fabrication process board, including: described wafer is carried out oxygen
Compound removes process and processes with wafer cleaning, uses fabrication process board to carry out described wafer at processing procedure
Manage, the described wafer after fabrication process is carried out process rapid thermal oxidation and to process rapid thermal oxidation
After described wafer carry out the measurement of described surface photovoltage, to obtain through described fabrication process board system
The diffusion length of the metallic atom of the described wafer that journey processes and the concentration of metallic atom.
In one embodiment of the invention, described wafer is re-used in metallic pollution immediately monitoring.
In one embodiment of the invention, described wafer doping has boron atom.
In one embodiment of the invention, described oxide removal processes is to utilize fluohydric acid gas (HF)
Remove the oxide of described wafer surface；It is respectively with sulphuric acid and hydrogen peroxide that described wafer cleaning processes
Solution (SPM), ammonia are cleaned described with the solution (APM) of hydrogen peroxide and hydrochloric acid solution (HCl)
Wafer.
In one embodiment of the invention, described fabrication process is divided into low temperature system according to the temperature of processing procedure
Journey and high temperature process.
In one embodiment of the invention, described low temperature process comprises selected from wet etching processing procedure, ion
Change a kind of low temperature process in metallic plasma processing procedure；Described high temperature process comprises selected from high temperature furnace pipe
Learn vapour deposition, high temperature furnace pipe physical vapour deposition (PVD), RTA in situ steam method of formation, quickly
Heat up a kind of high temperature process in annealing.
In one embodiment of the invention, described oxide removal process is carried out after described high temperature process
Process with wafer cleaning.
In one embodiment of the invention, the process temperature range of described process rapid thermal oxidation is
600 DEG C to 1050 DEG C.
In one embodiment of the invention, the oxidated layer thickness that described process rapid thermal oxidation is generated
ForExtremely
In one embodiment of the invention, another wafer is further included as with reference to control wafer.
In one embodiment of the invention, metallic pollution immediately monitoring method be by monitoring program at
The diffusion length difference of the metallic atom after reason or the concentration difference of metallic atom are assessed.
Based on above-mentioned, due to the metallic pollution immediately monitoring method of semiconductor wafer proposed by the invention,
Effectively by measuring the pollution level of surface photovoltage immediately monitoring process work bench, and can fathom
Deeper up to 100 μm more than, and can be used in the metal monitoring of CIS processing procedure, and by repeating to make
Production cost is reduced with the wafer of monitoring.
For the features described above of the present invention and advantage can be become apparent, embodiment cited below particularly, and join
Conjunction accompanying drawing is described in detail below.
Accompanying drawing explanation
Figure 1A Yu Figure 1B is the metallic pollution of the semiconductor wafer according to one embodiment of the invention
The flow chart of immediately monitoring method, it is used for low temperature process.
Fig. 2 A and Fig. 2 B is the metallic pollution of the semiconductor wafer according to another embodiment of the present invention
The flow chart of immediately monitoring method, it is used for high temperature process.
Fig. 3 is the metallic pollution immediately monitoring side of the semiconductor wafer according to one embodiment of the invention
The diffusion length of the metallic atom of method is along with the variation diagram of operation number.
Fig. 4 is the metallic pollution immediately monitoring side of the semiconductor wafer according to one embodiment of the invention
The concentration of the metallic atom of method is along with the variation diagram of operation number.
Fig. 5 is that process rapid thermal oxidation affects variation diagram to what surface photovoltage was measured.
Detailed description of the invention
The metallic pollution immediately monitoring method of the semiconductor wafer of the present invention can be according to the temperature of fabrication process
Degree is divided into low temperature process and high temperature process.Wherein, the metallic pollution immediately monitoring of described semiconductor wafer
Method can be used for monitoring the metallic pollution including following board: 1. low temperature process board: gold-tinted board, erosion
Carve board, wet etching board, board etc. is ion implanted；2. high temperature process board: boiler tube board, quickly
Annealing machine bench, physical vapour deposition (PVD) board, chemical vapor deposition machine station etc..
Hereinafter, the metallic pollution immediately monitoring side of the semiconductor wafer of one embodiment of the invention is described
Method, it is used for low temperature process.
Figure 1A with Figure 1B is that the metallic pollution of the semiconductor wafer of one embodiment of the invention is supervised immediately
The flow chart of prosecutor method, it is used for low temperature process.Refer to Figure 1A and Figure 1B, the half of the present embodiment
The metallic pollution immediately monitoring method of conductor wafer includes the metallic pollution reference value test a of wafer, and
The metallic pollution immediately monitoring test b of fabrication process board.Metallic pollution reference value test a in Figure 1A
It is the pollution level in order to confirm wafer, and as reference value；The gold of the fabrication process board in Figure 1B
Belonging to pollution immediately monitoring test b is then in order to monitoring program processes the pollution level of board.
Referring to Figure 1A, the metallic pollution reference value test a of the wafer of the present invention comprises the steps 100
To step 103.
First, in step 100, it is provided that a wafer, described wafer e.g. N-type silicon wafer, p-type
Silicon wafer etc..In one embodiment, P-type silicon wafer is become doped with boron atom.Wherein, mix
Miscellaneous boron atom is easily combined with foreign atom, and can improve the sensitivity of surface photovoltage test.One
In individual embodiment, in addition to the control wafer that described wafer is used as fabrication process board, further include another wafer
As with reference to control wafer, and using the value that measured with reference to control wafer as reference value.Wherein, described with reference to control
Sheet only carries out metallic pollution reference value test a, and the metallic pollution not carrying out fabrication process board is supervised immediately
Control test b.Additionally, by using extra reference control wafer, can correctly judge the processing procedure machine to be monitored
The metallic pollution degree of platform, and can stablizing with monitoring measurement board (i.e. surface photovoltage measurement platform)
Degree.
Then, in a step 101, carrying out wafer cleaning process, described wafer cleaning processes and comprises respectively
Solution (sulfuric peroxide mixture, SPM), ammonia and hydrogen peroxide with sulphuric acid Yu hydrogen peroxide
Solution (ammonium peroxide mixture, APM) and hydrochloric acid solution (HCl) clean described
Wafer.Processed by above-mentioned wafer cleaning, can effectively remove adsorb wafer surface Organic substance and
Metal ion.
Then, in a step 102, the described wafer after carrying out wafer cleaning process is carried out Rapid Thermal oxygen
Change processing procedure (Rapid Thermal Oxidation, RTO), to generate oxide in described wafer surface, use
Electric charge and bond with stable wafer surface.In one embodiment, the processing procedure of process rapid thermal oxidation
Temperature range is preferably 600 DEG C to 1050 DEG C, more preferably about 700 DEG C；Being given birth to of process rapid thermal oxidation
The oxidated layer thickness become is preferablyExtremely
Finally, in step 103, the described wafer after process rapid thermal oxidation is carried out surface photovoltage
The measurement of (surface photo voltage, SPV), to obtain as the metallic atom in the wafer of reference value
Diffusion length (diffusion length) DLReferenceConcentration [metal] with metallic atomReference, measured value i.e. wafer
The signal that contained metal atom concentration itself is caused.Additionally, measure principle according to surface photovoltage,
Described metallic atom can refer to all of metal impurities atom.In one embodiment, measured
Metallic atom is ferrum.
The metallic pollution immediately monitoring b of the fabrication process board of the present invention, comprises the steps 104 to step
Rapid 108.
First, at step 104, the wafer after the metallic pollution reference value to wafer tests a test enters
Row oxide removal processes and processes with wafer cleaning, and wherein oxide removal processes is to utilize fluohydric acid gas (HF)
Removing the oxide of described wafer surface, wafer cleaning processes and then processes phase with aforesaid wafer cleaning
With, therefore repeat no more.
Then, in step 105, use fabrication process board that described wafer is carried out fabrication process.?
In the present embodiment, the fabrication process using fabrication process board to be carried out is low temperature process, e.g. wraps
Containing in wet etching processing procedure, ionized metal plasma (ionized metal plasma, IMP) processing procedure
A kind of low temperature process.In one embodiment, fabrication process e.g. wet etching processing procedure.
Then, in step 107, the described wafer after processing low temperature process carries out rapid thermal oxidation system
Journey, to generate oxide in wafer surface, for stablizing electric charge and the bond of wafer surface.A reality
Executing in scheme, the process temperature range of process rapid thermal oxidation is preferably 600 DEG C to 1050 DEG C, more preferably
It is about 700 DEG C；The oxidated layer thickness generated of process rapid thermal oxidation 107 is preferablyExtremely
Finally, in step 108, the described wafer after process rapid thermal oxidation is carried out surface photovoltage
Measurement, to obtain metallic atom in the described wafer of described fabrication process board fabrication process
Diffusion length DLEQConcentration [metal] with metallic atomEQ.Wherein, described metallic pollution immediately monitoring side
Method is the diffusion length difference of the metallic atom after being processed by the monitoring program of relatively different operation number
Or the concentration difference of metallic atom assesses.
For example, the diffusion length as the metallic atom of the wafer of reference value itself is DLReference, no
Diffusion length difference (△ DL with the metallic atom of operation numberReference) it is DLWith reference to (n)-DLWith reference to (n+1), wherein
N is operation number；Concentration as the metallic atom of of reference value itself is [metal]Reference, different runnings
Concentration difference (the △ [metal] of the metallic atom of number of timesReference) it is [metal]With reference to (n+1)-[metal]With reference to (n), wherein n
For operation number.
The diffusion length of the metallic atom of the metallic pollution of the wafer that board is caused is DLEQ, board exists
Diffusion length difference (the △ DL of the metallic atom of the metallic pollution of the wafer that different operation number are causedEQ)
For DLEQ(n)-DLEQ(n+1), wherein n is operation number；The gold of the metallic pollution of the wafer that board is caused
The concentration belonging to atom is [metal]EQ, the metal raw of the metallic pollution of the wafer that different operation number are caused
Concentration difference (the △ [metal] of sonEQ) it is [metal]EQ(n+1)-[metal]EQ(n), wherein n is operation number.Institute
State difference (the i.e. △ that metallic pollution immediately monitoring method is the difference by diffusion length or metal concentration
DLReferenceAnd △ DLEQ, or △ [metal]ReferenceAnd △ [metal]EQ), judge whether process work bench meets with
By metallic pollution.
Then, the metallic pollution immediately monitoring method of another semiconductor wafer of the present invention being described, it is for being used for
High temperature process.
Fig. 2 A and Fig. 2 B is that the metallic pollution of the semiconductor wafer of another embodiment of the present invention is supervised immediately
The flow chart of prosecutor method, it is used for high temperature process.Refer to Fig. 2 A and Fig. 2 B, the half of the present embodiment
The metallic pollution immediately monitoring method of conductor wafer mainly includes the metallic pollution reference value test a of wafer,
And the metallic pollution immediately monitoring test b of fabrication process board.Wherein, the metallic pollution reference of wafer
The part of value test a and the metallic pollution immediately monitoring method phase of semiconductor wafer during above-mentioned low temperature process
With, therefore description is omitted.
The metallic pollution immediately monitoring b of the present invention fabrication process board when high temperature process, including as follows
Step 104 is to step 108.
First, at step 104, the wafer after the metallic pollution reference value to wafer tests a test enters
Row oxide removal process with wafer cleaning process, wherein oxide removal process with wafer cleaning process with
The metallic pollution immediately monitoring method of semiconductor wafer during above-mentioned low temperature process is identical, therefore repeats no more.
Then, in step 105, use fabrication process board that described wafer is carried out fabrication process.?
In the present embodiment, the processing procedure using fabrication process board to be carried out is high temperature process, e.g. comprises choosing
From high temperature furnace pipe chemical gaseous phase deposition, high temperature furnace pipe physical vapour deposition (PVD), RTA steam in situ
A kind of high temperature process in method of formation, RTA.In one embodiment, fabrication process example
High temperature furnace pipe chemical gaseous phase deposition in this way.
Then, in step 106, the described wafer after processing high temperature process carries out another oxide shifting
Process with wafer cleaning except processing, thus remove because fabrication process board is given birth in wafer surface when high temperature
The oxide become.
Then, in step 107, the described wafer after processing the high temperature process removing oxide is carried out
Process rapid thermal oxidation, to generate oxide in wafer surface, for stablizing electric charge and the key of wafer surface
Knot.In one embodiment, the process temperature range of process rapid thermal oxidation is preferably 600 DEG C extremely
1050 DEG C, more preferably about 700 DEG C；The oxidated layer thickness generated of process rapid thermal oxidation is preferably
Extremely
Finally, in step 108, the described wafer after process rapid thermal oxidation is carried out surface photovoltage
Measurement, to obtain metallic atom in the described wafer of described fabrication process board fabrication process
Diffusion length DLEQConcentration [metal] with metallic atomEQ.Wherein, described metallic pollution immediately monitoring side
Method is the diffusion length difference of the metallic atom after being processed by the monitoring program of relatively different operation number
Or the concentration difference of metallic atom assesses.
For example, the diffusion length as the metallic atom caused of the wafer of reference value itself is
DLReference, diffusion length difference (the △ DL of the metallic atom of different operation numberReference) it is DLWith reference to (n)-DLGinseng Examine (n+1), wherein n is operation number；Concentration as the metallic atom of the wafer of reference value itself is [metal]Reference, wafer is at the concentration difference (△ [metal] of the metallic atom of different operation numberReference) it is [metal]Reference (n)-[metal]With reference to (n+1), wherein n is operation number.
The diffusion length of the metallic atom of the metallic pollution of the wafer that board is caused is DLEQ, board exists
Diffusion length difference (the △ DL of the metallic atom of the metallic pollution of the wafer that different operation number are causedEQ)
For DLEQ(n)-DLEQ(n+1), wherein n is operation number；The gold of the metallic pollution of the wafer that board is caused
The concentration belonging to atom is [metal]EQ, the metal raw of the metallic pollution of the wafer that different operation number are caused
Concentration difference (the △ [metal] of sonEQ) it is [metal]EQ(n+1)-[metal]EQ(n), wherein n is operation number.Institute
State difference (the i.e. △ that metallic pollution immediately monitoring method is the difference by diffusion length or metal concentration
DLReferenceAnd △ DLEQ, or △ [metal]ReferenceAnd △ [metal]EQ), judge whether process work bench meets with
By metallic pollution.
Additionally, measure principle according to surface photovoltage, it is miscellaneous that described metallic atom can refer to all of metal
Matter atom.In one embodiment of the invention, in the case of the polluter of metallic pollution is ferrum, use
In addition to the control wafer that described wafer is used as fabrication process board, further include another wafer and come as with reference to control wafer
Measure reference value.Monitor wafer is carried out by the metallic pollution immediately monitoring method of the semiconductor wafer of the present invention
Polluting, its result is as shown in Figure 3 and Figure 4.Wherein, Fig. 3 is the gold of one embodiment of the invention
The diffusion length of genus atom is along with the variation diagram of operation number, and Fig. 4 is then one embodiment of the invention
The concentration of metallic atom of metallic pollution immediately monitoring method of semiconductor wafer along with operation number
Variation diagram.
The diffusion length of the metallic atom of Fig. 3 along with, in the variation diagram of operation number, transverse axis is operation number,
The right longitudinal axis represents diffusion length (μm), and the left longitudinal axis represents poor (the i.e. △ DL of diffusion lengthReference=DLReference (n)-DLWith reference to (n+1)Or △ DLEQ=DLEQ(n)-DLEQ(n+1)) (μm), wherein DLWith reference to (n)For with reference to control wafer the
The diffusion length of the iron atom under n operation, DLEQ(n)Control wafer for fabrication process board is grasped in n-th
The diffusion length of the iron atom under Zuoing.From the figure 3, it may be seen that when board suffers metallic pollution, can pass through this
The metallic pollution immediately monitoring method of the semiconductor wafer of invention, by the metal of relatively different operation number
The diffusion length difference of atom assesses whether to suffer metallic pollution (i.e. to compare △ DLReferenceWith △ DLEQWith
The change curve of operation number), as △ DLEQCompared with △ DLReferenceWhen being significantly increased, i.e. represent this para-crystal
The fabrication process of sheet is subject to metallic pollution, represents with NG symbol.
The concentration of the metallic atom of Fig. 4 is along with, in the variation diagram of operation number, transverse axis is operation number, right
Side's longitudinal axis represents concentration of iron (atom (the atm)/cm in wafer3), the left longitudinal axis represents poor (the i.e. △ of diffusion length
[Fe]Reference=[Fe]With reference to (n+1)-[Fe]With reference to (n1)Or △ [Fe]EQ=[Fe]EQ(n+1)-[Fe]EQ(n)) (atom (atm)/cm3), its
In [Fe]With reference to (n1)For reference control wafer concentration of iron under n-th operates, [Fe]EQ(n)For fabrication process board
Control wafer concentration of iron under n-th operates.As shown in Figure 4, when board suffers metallic pollution, can be saturating
Cross the metallic pollution immediately monitoring method of the semiconductor wafer of the present invention, before relatively different operation number
After the concentration difference of metallic atom assess whether to suffer metallic pollution (i.e. to compare △ [Fe]ReferenceWith △
[Fe]EQChange curve along with operation number), as △ [Fe]EQCompared with △ [Fe]ReferenceWhen being significantly increased, i.e.
The fabrication process representing this wafer is subject to the pollution of ferrum, represents with NG symbol.
Additionally, the present invention is effectively to make surface photoelectricity by wafer is carried out process rapid thermal oxidation
The numerical stability that pressure is measured.In Figure 5, transverse axis is operation number, and the right longitudinal axis represents diffusion length (μm),
The left longitudinal axis represents poor (the i.e. △ DL of diffusion lengthWithout RTO=DLWithout RTO (n)-DLWithout RTO (n+1)Or △ DLThrough RTO=DLThrough RTO (n)-DLThrough RTO (n+1)), wherein DLThrough RTO (n)For wafer through rapid thermal oxidation system
The diffusion length of the iron atom under n-th operates, DL after journeyWithout RTO (n)For wafer without Rapid Thermal
The diffusion length of the iron atom under the n-th operation of oxidation process.
As it is shown in figure 5, use the wafer without process work bench process of the same terms to carry out surface light
The measurement of voltage, and compare the impact that surface photovoltage is measured by process rapid thermal oxidation, wherein without
Cross process rapid thermal oxidation process wafer can exist to high-density because of inside oxygen precipitate (main body micro-lack
Fall into, Bulk Micro Defect；BMD) or become the tiny flaw of its growth core, wafer surface is made
CHARGE DISTRIBUTION is abnormal and the instability that causes surface photovoltage to measure.Therefore, by comparison diagram 5
△DLWithout RTOWith △ DLThrough RTOData understand, if when wafer surface photovoltage measure before without
When process rapid thermal oxidation processes, the measurement fluctuation of surface photovoltage can be made not have repeatability；If
Surface photovoltage carries out process rapid thermal oxidation before measuring, then can stablize the CHARGE DISTRIBUTION of wafer surface, and
The measurement making surface photovoltage has repeatability.
It addition, be noted that the metallic pollution immediately monitoring method of the semiconductor wafer of the present invention especially
In wafer reusable in metallic pollution immediately monitoring, and reduce production cost and highlight processing procedure
The metallic pollution degree of board.
In sum, the present invention provides a kind of metallic pollution immediately monitoring method of semiconductor wafer, can lead to
Cross execution process rapid thermal oxidation and generate oxide in wafer surface, improve electric charge and the key of wafer surface
Knot state, makes electric charge and the bond state consistency of wafer surface, and the life of the oxide of suppression nature generation
Become, and the measurement of surface photovoltage is stablized.Thus, develop a set of effective method, can be
Time monitoring program board metallic pollution degree.And, through control wafer being reused, utilize control wafer to survey
The subtracting each other of value before and after amount, and the impact of processing procedure before removable semiconductor wafer, and reduce manufacturing cost
And highlight the metallic pollution degree of process work bench.
Additionally, also can additionally use with reference to control wafer, and make to need not move through process work bench with reference to control wafer, and
Can correctly judge the steady of the metallic pollution degree of process work bench to be monitored and monitoring measurement board
Fixed degree.It addition, through the metering system of surface photovoltage can make MTD as deep as 100 μm more than,
And make the metallic pollution immediately monitoring method of the semiconductor wafer of the present invention meet the metal of CIS processing procedure
The requirement of monitoring mechanism.
Although the present invention is open as above with embodiment, so it is not limited to the present invention, any tool
There are those skilled in the art of usual knowledge, without departing from the spirit and scope of the present invention, when doing some
The change permitted and retouching, therefore protection scope of the present invention is when depending on the defined person of appending claims scope
It is as the criterion.
Symbol description
100,101,102,103,104,105,106,107,108: step
The metallic pollution reference value test of a: wafer
The metallic pollution immediately monitoring test of b: fabrication process board
NG: polluted
Claims (17)
1. a metallic pollution immediately monitoring method for semiconductor wafer, including:
Wafer is carried out process rapid thermal oxidation；And
Described wafer after process rapid thermal oxidation is carried out the measurement of surface photovoltage.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 1, wherein said crystalline substance
Sheet is re-used in metallic pollution immediately monitoring.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 1, wherein said crystalline substance
Sheet is doped with boron atom.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 1, wherein said soon
The process temperature range of speed thermal oxidation process is 600 DEG C to 1050 DEG C.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 1, wherein said soon
The oxidated layer thickness that speed thermal oxidation process is generated isExtremely
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 1, wherein further includes
Another wafer is as with reference to control wafer.
7. a metallic pollution immediately monitoring method for semiconductor wafer, including:
The metallic pollution reference value test of wafer, and
The metallic pollution immediately monitoring test of fabrication process board；
Wherein, the metallic pollution reference value test of described wafer, including:
Wafer is carried out wafer cleaning process,
Described wafer is carried out process rapid thermal oxidation and
Described wafer after process rapid thermal oxidation is carried out the measurement of surface photovoltage, described to obtain
The diffusion length of the metallic atom of wafer and the concentration of metallic atom are using as reference value；
The metallic pollution immediately monitoring of described fabrication process board, including:
Described wafer is carried out oxide removal process with wafer cleaning process,
Use fabrication process board described wafer is carried out fabrication process,
Described wafer after fabrication process is carried out process rapid thermal oxidation and
Described wafer after process rapid thermal oxidation is carried out the measurement of described surface photovoltage, to obtain
The diffusion length of metallic atom of described wafer and metal through described fabrication process board fabrication process
The concentration of atom.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 7, wherein said crystalline substance
Sheet is re-used in metallic pollution immediately monitoring.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 7, wherein said crystalline substance
Sheet is doped with boron atom.
The metallic pollution immediately monitoring method of semiconductor wafer the most according to claim 7, wherein said
It is the oxide utilizing fluohydric acid gas (HF) to remove described wafer surface that oxide removal processes；Described wafer
Cleaning treatment is respectively with sulphuric acid and the solution of the solution (SPM) of hydrogen peroxide, ammonia and hydrogen peroxide
And hydrochloric acid solution (HCl) cleans described wafer (APM).
The metallic pollution immediately monitoring method of 11. semiconductor wafers according to claim 7, wherein said
Fabrication process is divided into low temperature process and high temperature process according to the temperature of processing procedure.
The metallic pollution immediately monitoring method of 12. semiconductor wafers according to claim 11, wherein said
Low temperature process comprises a kind of low temperature system in wet etching processing procedure, ionized metal plasma processing procedure
Journey；Described high temperature process comprise selected from high temperature furnace pipe chemical gaseous phase deposition, high temperature furnace pipe physical vapour deposition (PVD),
A kind of high temperature process in RTA steam method of formation, RTA in situ.
The metallic pollution immediately monitoring method of 13. semiconductor wafers according to claim 11, wherein said
Carry out described oxide removal after high temperature process to process and the process of described wafer cleaning.
The metallic pollution immediately monitoring method of 14. semiconductor wafers according to claim 7, wherein said
The process temperature range of process rapid thermal oxidation is 600 DEG C to 1050 DEG C.
The metallic pollution immediately monitoring method of 15. semiconductor wafers according to claim 7, wherein said
The oxidated layer thickness that process rapid thermal oxidation is generated isExtremely
The metallic pollution immediately monitoring method of 16. semiconductor wafers according to claim 7, the most more wraps
Containing another wafer as with reference to control wafer.
The metallic pollution immediately monitoring method of 17. semiconductor wafers according to claim 7, wherein metal
Pollution immediately monitoring method is diffusion length difference or the gold of the metallic atom after being processed by monitoring program
The concentration difference belonging to atom is assessed.
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| TW104107012A TWI559424B (en) | 2015-03-05 | 2015-03-05 | Method for real-time monitoring metal pollution of semiconductor wafer |
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| CN111106024A (en) * | 2018-10-26 | 2020-05-05 | 长鑫存储技术有限公司 | Detection method of flow field distribution |
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| JP6399141B1 (en) | 2017-04-17 | 2018-10-03 | 株式会社Sumco | Method for analyzing metal contamination of silicon wafer and method for manufacturing silicon wafer |
| DE112018006519T5 (en) * | 2017-12-22 | 2020-09-24 | Sumco Corporation | Method of measuring Fe concentration in a p-type silicon wafer and SPV measuring device |
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| US20030064533A1 (en) * | 2001-09-28 | 2003-04-03 | Ramappa Deepak A. | Method and apparatus for monitoring in-line copper contamination |
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| US20140342473A1 (en) * | 2013-05-14 | 2014-11-20 | United Microelectronics Corp. | Semiconductor processing method |
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| US8143078B2 (en) * | 2009-12-23 | 2012-03-27 | Memc Electronic Materials, Inc. | Methods for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
| CN102790170B (en) * | 2011-05-19 | 2014-11-05 | 宇能电科技股份有限公司 | Magnetoresistive sensing element and forming method thereof |
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| TWI230262B (en) * | 2000-06-29 | 2005-04-01 | Semiconductor Diagnostics Inc | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
| US20030064533A1 (en) * | 2001-09-28 | 2003-04-03 | Ramappa Deepak A. | Method and apparatus for monitoring in-line copper contamination |
| US20140342473A1 (en) * | 2013-05-14 | 2014-11-20 | United Microelectronics Corp. | Semiconductor processing method |
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| CN111106024A (en) * | 2018-10-26 | 2020-05-05 | 长鑫存储技术有限公司 | Detection method of flow field distribution |
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| TW201633416A (en) | 2016-09-16 |
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