CN111095514A - 具有加热的喷头组件的基板处理腔室 - Google Patents
具有加热的喷头组件的基板处理腔室 Download PDFInfo
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Abstract
本文提供了用于处理基板的设备。在一些实施方式中,喷头组件包括:气体分配板,气体分配板具有多个孔;保持器,保持器具有壁、径向向内延伸的凸缘、和径向向外延伸的凸缘,所述径向向内延伸的凸缘从壁的下部延伸且耦接至气体分配板,所述径向向外延伸的凸缘从壁的上部延伸,其中壁具有在约0.015英寸与约0.2英寸之间的厚度;和加热设备,所述加热设备设置在气体分配板上方并且与气体分配板间隔开,其中加热设备包括加热器,加热器配置以加热气体分配板。
Description
技术领域
本公开内容的实施方式大体涉及用于处理基板的设备。
背景技术
在一些化学气相(CVD)工艺中,可能需要“覆盖(capping)”金属层。覆盖步骤,包括在先前经沉积的金属层上形成陶瓷层,以避免金属层的氧化。例如,当钛(Ti)层沉积在基板上时,可能需要在Ti层顶上形成氮化钛(TiN)层,以防止下面的Ti层的氧化。一种用来形成氮化钛层的方法,是使用氮等离子体以达到所述Ti层的上部的氮化。然而,发明人已发现因为处理腔室中的喷头没有达到足够高的温度,所以在覆盖之后,一些前驱物会保留在喷头的孔中。喷头中剩余的前驱物会污染在腔室中处理的后续基板上所形成的Ti层。
因此,发明人提供了用于处理基板的改良的喷头组件和包括所述喷头组件的处理腔室的实施方式。
发明内容
本文公开了用于处理基板的设备。在一些实施方式中,喷头组件包括:气体分配板,气体分配板具有多个孔;保持器(holder),保持器具有壁、径向向内延伸的凸缘、和径向向外延伸的凸缘,所述径向向内延伸的凸缘从壁的下部延伸且耦接至气体分配板,所述径向向外延伸的凸缘从壁的上部延伸,其中壁具有在约0.015英寸与约0.2英寸之间的厚度;和加热设备,加热设备设置在气体分配板上方并且与气体分配板间隔开,其中加热设备包括一加热器,加热器配置以加热气体分配板。
在一些实施方式中,基板处理腔室包括:腔室主体;顶板,所述顶板设置于所述腔室主体上方以界定在所述腔室主体与所述顶板内的内部容积;基板支撑件,所述基板支撑件设置于所述内部容积的下部中,其中所述基板支撑件包括第一加热器;气体分配板,所述气体分配板具有多个孔,且所述气体分配板设置于与所述基板支撑件相对的所述内部容积的上部中;和加热设备,所述加热设备具有第二加热器,且所述加热设备设置在所述气体分配板与所述顶板之间并且与所述气体分配板和所述顶板间隔开,使得能界定出一气流路径,在所述气流路径中气体从所述加热设备之上,所述加热设备周边,和从所述加热设备之下流入所述气体分配板。
在一些实施方式中,基板处理腔室包括:腔室主体;导电的顶板,所述导电的顶板设置于所述腔室主体上方以界定在所述腔室主体与所述导电的顶板内的内部容积;基板支撑件,所述基板支撑件设置于所述内部容积的下部中,其中所述基板支撑件包括第一加热器;气体分配板,所述气体分配板设置于与所述基板支撑件相对的所述内部容积的上部中;加热设备,所述加热设备具有第二加热器,且所述加热设备设置在所述气体分配板与所述导电的顶板之间并且与所述气体分配板和所述导电的顶板间隔开,使得能界定出一气流路径,在所述气流路径中气体从所述加热设备之上,所述加热设备周边,和从所述加热设备之下流入所述气体分配板;保持器,所述保持器具有壁、径向向内延伸的凸缘、和径向向外延伸的凸缘,所述径向向内延伸的凸缘从壁的下部延伸且耦接至气体分配板,所述径向向外延伸的凸缘从所述壁的上部延伸,且设置于所述腔室主体与所述导电的顶板之间;和RF垫片(RF gasket),所述RF衬垫设置于所述径向向外延伸的凸缘与所述导电的顶板之间,以利于RF能量从所述导电的顶板,经由所述保持器,而进入所述气体分配板的耦合。
以下将描述本公开内容的其他和进一步的实施方式。
附图说明
通过参照附图中描绘的本公开内容的说明性实施方式,可以理解以上简要概述及在以下更详细描述的本公开内容的实施方式。然而,附图仅图示出本公开内容的典型实施方式,因此不应视为对范围的限制,因为本公开内容可允许其他同等有效的实施方式。
图1描绘了根据本公开内容的一些实施方式的处理腔室的示意图。
图2描绘了图1的处理腔室的一部分的截面图。
图3描绘了根据本公开内容的一些实施方式的设置在基板支撑件中的加热器的示意性顶视图。
为了便于理解,在可能的情况下,使用相同的附图标记来表示附图中共有的相同元件。附图未按比例绘制,并且为了清楚起见而简化。一个实施方式的元件和特征可以有利地并入其他实施方式中而不需进一步叙述。
具体实施方式
本公开内容的实施方式提供了一种喷头组件,其可用在基板处理腔室中,诸如化学气相沉积(CVD)腔室,以确保喷头组件的气体分配板的适当操作温度。本发明的喷头有利地减少或消除了留在气体分配板中的前驱物,从而减低或消除了经处理的基板的污染。用于并入本文所述设备的适于处理腔室的实例包括可从加利福尼亚州圣克拉拉市的应用材料公司(Applied Materials,Inc.)取得的CVD沉积腔室。所提供的处理腔室以下描述是用于上下文说明及示例性目的,且不应该被解读或解释为限制本公开内容的范围。
图1是根据本公开内容的一些实施方式的基板处理腔室(处理腔室100)的示意性截面图,所述处理腔室包括适于CVD工艺的气体输送系统130。图2是处理腔室100的一部分的截面图。处理腔室100包括腔室主体102,腔室主体102具有位于腔室主体102内且在室盖组件132下方的处理容积。处理腔室100中的狭缝阀108为机械手(未示出)提供通道,以将基板110(诸如200mm或300mm半导体晶片或玻璃基板)输送到处理腔室100和从处理腔室100取出。腔室衬垫177沿着处理腔室100的壁设置,以保护腔室免受处理/清洁过程中使用的腐蚀性气体的影响。
基板支撑件112将基板110支撑在处理腔室100中的基板接收表面111上。基板支撑件112安装到升降马达114,用于升高和降低基板支撑件112,且基板110设置在所述基板支撑件上。连接至升降马达118的升降板116(如图1所示)安装于处理腔室100内,以升起和降低穿过基板支撑件112的可移动地设置的升降销120。升降销120升起和降低在基板支撑件112的表面之上的基板110。基板支撑件112可包括真空卡盘(未示出)、静电卡盘(未示出)、或夹环(clamp ring)(未示出),以在沉积工艺期间将基板110固定至基板支撑件112。
基板支撑件112的温度可经调整以控制基板110的温度。例如,基板支撑件112可使用第一加热器来加热,诸如一个或多个第一电阻加热器元件144,或可使用辐射热来加热,诸如加热灯(如图3中所示)。净化环122可设置在基板支撑件112上,以界定出净化通道(purge channel)124,净化通道124向基板110的周边部分提供净化气体,以防止在基板110的周边部分上形成沉积。
气体输送系统130设置在腔室主体102的上部,以向处理腔室100提供气体,诸如工艺气体和/或净化气体。真空系统(未示出)与泵通道179连通,以从处理腔室100中排出任何所需的气体,并帮助维持处理腔室100内的所需压力或压力范围。
在一些实施方式中,腔室盖组件132包括气体分散通道134,气体分散通道134延伸穿过腔室盖组件132的中央部分。如图1所示,气体分散通道134垂直地延伸朝向基板接收表面111,经过顶板170,并到达下表面160。在一些实施方式中,气体分散通道134的上部实质上为圆柱形,且气体分散通道134的下部沿着气体分散通道134的中心轴线逐渐变细(taper)。下表面160的尺寸与形状设计成实质上覆盖设置在基板支撑件112的基板接收表面111上的基板110。在一些实施方式中,下表面160从顶板170的外边缘朝向气体分散通道134逐渐变细。下表面160可包含一个或多个表面,诸如直表面、凹表面、凸表面或其组合,以经由气体分散通道134来控制气体的流动。
气体输送系统130可提供一种或多种气体到气体分散通道134以处理基板110。在一些实施方式中,气体输送系统130可经由一个气体入口耦接至气体分散通道134。在一些实施方式中,气体输送系统可替代地经由多个入口耦接至气体分散通道134。
处理腔室100进一步包括喷头组件142,喷头组件142具有气体分配板125,气体分配板125具有穿过气体分配板125设置的多个孔126,设置在气体分配板125与顶板170之间的加热设备150,以及经配置以将气体分配板125保持于适当位置的保持器152。气体分配板125在气体分散通道134的表面之上延伸,使得从气体分散通道134至基板的唯一途径是通过气体分配板125上的所述多个孔126。保持器152具有第一厚度t1,足以使从气体分配板125至处理腔室100的热损失最小化。尽管第一厚度t1依赖于形成保持器152的材料,第一厚度t1应足够坚固以支撑气体分配板125的重量,但又小到足以使从气体分配板125的热损失最小化。在一些实施方式中,第一厚度t1可在约0.015英寸与约0.2英寸之间。在一些实施方式中,第一厚度t1可替代地在约0.05英寸与约0.15英寸之间。
保持器152可以由任何工艺相容的材料形成,所述材料可以支撑气体分配板125,同时保持相对较小的厚度(如上所述)。在一些实施方式中,所述材料具有第一热膨胀系数(CTE),其在气体分配板的第二CTE的约5%以内。保持器152由导电材料所形成,所述导电材料具有小于约30W/m·K的热传导性,以使从气体分配板125的热损失最小化,以将RF能量耦合至气体分配板125。在一些实施方式中,保持器152可由主要为奥氏体镍铬基超合金所形成,例如INCONEL。在一些实施方式中,保持器152可替代地由不锈钢或镍合金形成。
加热设备150与气体分配板125和顶板170间隔开,使得能界定出一气流路径,在所述气流路径中,如箭头149所表示,气体从所述加热设备150之上,所述加热设备150周边,和从所述加热设备之下流入所述气体分配板。
发明人已发现,为了将气体分配板125维持在足以确保在孔126中留下很少或没有前驱物残留物的温度,气体分配板125必须保持在足够高的温度。为了达到这样的温度,气体分配板125由加热设备150从上方加热,且由基板支撑件112从下方加热,使得气体分配板125的温度在处理期间保持在大于约300℃的预定温度。在一些实施方式中,在处理期间,可替代地将所述气体分配板保持在大于约400℃的预定温度。加热设备150包括第二加热器,例如,一个或多个第二电阻加热器元件154。加热器能量197电耦合至所述第二加热器,以对所述第二加热器提供电力。如以上所阐述的,基板支撑件包括第一加热器,例如,一个或多个第一电阻加热器元件144。第一加热器和第二加热器联合将气体分配板125保持在上述的预定温度。
尽管图1将第一加热器和第二加热器描绘为电阻加热元件,但在一些实施方式中,如图3所示,基板支撑件112的第一加热器和/或加热设备150的第二加热器可包括一个或多个第一加热灯302。在一些实施方式中,一个或多个第一加热灯302可布置在多个可独立控制的加热区中。图3中描绘了三个加热区,第一或内部加热区304、第二或中间加热区306、和第三或外部加热区308。尽管图3中描绘了三个加热区,可考虑更少或更多的加热区。图3描绘了设置在基板支撑件112或加热设备150中的加热灯。类似地,第一加热器和第二加热器可包括布置在多个可独立控制区域中的电阻加热元件。
返回参照图1,在一些实施方式中,处理腔室100可包括射频(RF)功率源198,其经由匹配网络199电耦合至顶板170,以将RF能量传递到基板处理腔室(例如,到气体分配板125)。为了促进RF能量与气体分配板125的耦合,顶板170由导电材料形成,例如,不锈钢、铝、镀镍铝、镍、其合金、或其他合适的材料。
在一些实施方式中,在基板支撑件112内提供RF电极(例如,第一RF电极)。在一些实施方式中,一个或多个第一电阻加热器元件144可被配置为第一RF电极。在一些实施方式中,且如图1所示,可以提供单独的电极,诸如电极145,作为第一RF电极。第一RF电极提供了在气体分配板125与第一RF电极之间的RF能量的接地路径,使得可以在气体分配板125与基板支撑件112之间的空间中形成等离子体。
可替代地或组合地,在一些实施方式中,在喷头组件142内提供RF电极(例如,第二RF电极)。在一些实施方式中,一个或多个第二电阻加热器元件154可被配置为第二RF电极。在一些实施方式中,且如图1所示,可以提供单独的电极,诸如电极155,作为第二RF电极。第二RF电极提供了在气体分配板125与第二RF电极之间的RF能量的接地路径,使得可以在气体分配板125与加热设备150之间的空间中形成等离子体。在一些实施方式中,处理腔室100进一步包括耦接至气体分散通道134的远程等离子体源(RPS)190。
图2图示了根据本公开内容的一些实施方式的处理腔室100的一部分的截面图。如图2所示,处理腔室100进一步包括设置在腔室主体102的壁顶部的盖板202和隔离环204。隔离环204经配置以使腔室主体102与传递给气体分配板125的RF能量电绝缘。在一些实施方式中,隔离环204可以由氧化铝、氮化铝、或类似的工艺相容的材料所形成。所述盖板经配置以将腔室盖(未示出)耦接至腔室主体102。在一些实施方式中,隔离环204包括主体206、从主体206的上部延伸的向外延伸部分208、以及从主体206的下部延伸的向内延伸部分210。向内延伸部分210与气体分配板125是相邻的并以间隙212间隔开,以适应气体分配板125的热膨胀。在一些实施方式中,间隙212的宽度在当气体分配板125处于最大热膨胀时的约0.04英寸与当气体分配板125处于室温(即,无热膨胀)时的约0.08英寸之间。在一些实施方式中,处理腔室100亦包括垫圈(washer ring)213,垫圈213设置在保持器152与隔离环204之间,以支撑保持器152。在一些实施方式中,垫圈213可由铝、不锈钢、或类似的工艺相容的材料所形成。
如图2中更示,保持器152包括:壁214;径向向内延伸的凸缘216,其从壁214的下部延伸并经由固定元件218耦接至气体分配板125;以及径向向外延伸的凸缘220,其从壁214的上部延伸并设置在腔室主体(即,垫圈213)与顶板170之间。在一些实施方式中,固定元件218可为螺钉(如图2所示)。在一些实施方式中,可替代地将径向向内延伸的凸缘216焊接至气体分配板125。为了使从保持器152的热损失最小化,且因而从气体分配板125的热损失最小化,可以使顶板170与保持器152之间的直接接触最小化。例如,顶板170可具有一几何构造,其能减少保持器152与顶板170之间的直接的表面接触。在一些实施方式中,并且如图2所示,顶板170可以具有最小接触区域222,其包括环形通道,所述环形通道具有在所述通道的任一侧上的两个相邻的环形分支(annular leg),所述环形分支座落在径向向外延伸的凸缘220顶上。
在一些实施方式中,RF垫片224也可设置在顶板170和径向向外延伸的凸缘220之间,以增进RF能量从顶板170,经由保持器152,而至气体分配板125的耦合。在一些实施方式中,处理腔室100可包括设置在各种部件界面处的密封件226(例如,O形环),以确保处理腔室100保持真空密封。
返回参照图1,在一些实施方式中,气体分配板125由非腐蚀性材料形成,例如镍。在一些实施方式中,多个孔126的每一者可具有等效的流体传导性。在一些实施方式中,多个孔126的密度(例如,每单位面积的孔的数量或孔的开口的尺寸)可在整个气体分配板125上变化,以在基板110上实现所需的沉积轮廓。例如,较高密度的孔126可设置在气体分配板125的中心,以增加基板中心相对于基板边缘的沉积速率,以进一步改善沉积均匀性。
参照图1和图2,在处理操作中,基板110藉由机械手(未示出)通过狭缝阀108而输送到处理腔室100。通过升降销120与所述机械手的配合,将基板110定位在基板支撑件112上。基板支撑件112将基板110提升至与气体分配板125的下表面紧密相对的位置。第一气体流(例如,含钛前驱气体)可藉由气体输送系统130,与第二气体流一起地或分开地(即,脉冲)注入至处理腔室100的气体分散通道134中。
气体穿过气体分散通道134并随后穿过气体分配板125中的多个孔126。然后将气体沉积在基板110的表面上。随后,可以经由RPS 190将等离子体(例如,含氮等离子体)提供至处理腔室100。例如,可以将氮等离子体提供至处理腔室100,以在先前沉积的Ti层的最上部形成TiN层。在整个处理操作中,基板支撑件112中的第一加热器(例如,一个或多个第一电阻加热器元件144)与加热设备150中的第二加热器(例如,一个或多个第二电阻加热器元件154)可以加热气体分配板125至预定温度,以加热已经积聚在气体分配板125上和/或孔126中的任何固体副产物。结果,任何积聚的固体副产物被汽化了。被汽化的副产物被真空系统(未示出)和泵通道179排出。在一些实施方式中,在处理期间,预定温度大于约300℃。在一些实施方式中,在处理期间,预定温度大于约400℃。
用于化学汽相沉积的腔室的其他实施方式并入了一个或多个这些特征。尽管结合化学气相沉积腔室及工艺进行披露,但是配置用于需要高温喷头的其他工艺的处理腔室也可得利于此处所披露的教导。
虽然前述内容针对本公开内容的一些实施方式,但是可以在不脱离其基本范围的情况下,设计其他的和进一步的实施方式。
Claims (15)
1.一种喷头组件,包括:
气体分配板,所述气体分配板具有多个孔;
保持器,所述保持器具有壁、径向向内延伸的凸缘和径向向外延伸的凸缘,所述径向向内延伸的凸缘从所述壁的下部延伸且耦接至所述气体分配板,所述径向向外延伸的凸缘从所述壁的上部延伸,其中所述壁具有在约0.015英寸与约0.2英寸之间的厚度;和
加热设备,所述加热设备设置在所述气体分配板上方并且与所述气体分配板间隔开,其中所述加热设备包括加热器,所述加热器配置以加热所述气体分配板。
2.如权利要求1所述的喷头组件,其中所述保持器具有第一热膨胀系数(CTE),所述第一热膨胀系数约为所述气体分配板的第二热膨胀系数的5%以内。
3.如权利要求1所述的喷头组件,其中所述保持器由导电材料所形成,所述导电材料具有小于约30W/m·K的热传导性。
4.如权利要求1至3中任一项所述的喷头组件,进一步包括:
RF电极,所述RF电极设置于所述加热设备内,使得能在所述气体分配板与所述加热设备之间的空间中形成等离子体。
5.一种基板处理腔室,包括:
腔室主体;
顶板,所述顶板设置于所述腔室主体上方以界定在所述腔室主体与所述顶板内的内部容积;
基板支撑件,所述基板支撑件设置于所述内部容积的下部中,其中所述基板支撑件包括第一加热器;
气体分配板,所述气体分配板具有多个孔,且所述气体分配板设置于与所述基板支撑件相对的所述内部容积的上部中;和
加热设备,所述加热设备具有第二加热器,且所述加热设备设置在所述气体分配板与所述顶板之间并且与所述气体分配板和所述顶板间隔开,使得能界定出一气流路径,在所述气流路径中气体从所述加热设备之上,所述加热设备周边,和从所述加热设备之下流入所述气体分配板。
6.如权利要求5所述的基板处理腔室,其中所述第一加热器包括一个或多个第一电阻加热器元件,或一个或多个第一加热灯,且其中所述第二加热器包括一个或多个第二电阻加热器元件,或一个或多个第二加热灯。
7.如权利要求5所述的基板处理腔室,进一步包括:
保持器,所述保持器具有壁、径向向内延伸的凸缘、和径向向外延伸的凸缘,所述径向向内延伸的凸缘从所述壁的下部延伸且耦接至所述气体分配板,所述径向向外延伸的凸缘从所述壁的上部延伸且设置在所述腔室主体与所述顶板之间。
8.如权利要求7所述的基板处理腔室,其中所述壁具有在约0.015英寸与约0.2英寸之间的厚度。
9.如权利要求7所述的基板处理腔室,进一步包括:
射频(RF)功率源,所述RF功率源电耦接至所述顶板以传送RF能量至所述基板处理腔室,其中所述顶板由导电材料所形成。
10.如权利要求9所述的基板处理腔室,进一步包括以下至少一者:
RF垫片,所述RF垫片设置于所述径向向外延伸的凸缘与所述顶板之间,以利于RF能量从所述顶板,经由所述保持器,而进入所述气体分配板的耦合;或
RF电极,所述RF电极设置于所述加热设备内,使得能在所述气体分配板与所述加热设备之间的空间中形成等离子体。
11.如权利要求7所述的基板处理腔室,其中所述保持器具有第一热膨胀系数(CTE),所述第一热膨胀系数约为所述气体分配板的第二热膨胀系数的5%以内。
12.如权利要求7所述的基板处理腔室,其中所述保持器由导电材料所形成,所述导电材料具有小于约30W/m·K的热传导性。
13.如权利要求5至12中任一项所述的基板处理腔室,进一步包括:
盖板,所述盖板设置于所述腔室主体的壁的顶部,并经配置将腔室盖耦接至所述腔室主体;和
隔离环,所述隔离环具有主体、向外延伸部分和向内延伸部分,所述向外延伸部分从所述主体的上部延伸且设置于所述盖板的一部分的顶部,所述向内延伸部分从所述主体的下部延伸,其中所述向内延伸部分邻接于所述气体分配板,且其中间隙设置于所述气体分配板与所述向内延伸部分之间,以适应所述气体分配板的热膨胀。
14.如权利要求13所述的基板处理腔室,其中在当所述气体分配板为最大热膨胀时所述间隙约为0.04英寸,且当所述气体分配板处于室温时所述间隙约为0.08英寸,所述间隙在约0.04英寸与约0.08英寸之间。
15.如权利要求5至12中任一项所述的基板处理腔室,其中所述第一加热器包括一个或多个第一加热区,且其中所述第二加热器包括一个或多个第二加热区。
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PCT/US2018/047161 WO2019055172A1 (en) | 2017-09-12 | 2018-08-21 | SUBSTRATE TREATMENT CHAMBER HAVING HEATED SHOWERHEAD ASSEMBLY |
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WO2021113184A1 (en) * | 2019-12-05 | 2021-06-10 | Applied Materials, Inc. | Gas distribution ceramic heater for deposition chamber |
TWI740728B (zh) * | 2020-02-19 | 2021-09-21 | 天虹科技股份有限公司 | 噴頭組件與原子層沉積設備 |
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CN111095514B (zh) | 2024-01-09 |
US11598003B2 (en) | 2023-03-07 |
JP2020533487A (ja) | 2020-11-19 |
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WO2019055172A1 (en) | 2019-03-21 |
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