CN111081519B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN111081519B
CN111081519B CN201910986841.7A CN201910986841A CN111081519B CN 111081519 B CN111081519 B CN 111081519B CN 201910986841 A CN201910986841 A CN 201910986841A CN 111081519 B CN111081519 B CN 111081519B
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China
Prior art keywords
ring
processing apparatus
support portion
substrate processing
lift pin
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CN201910986841.7A
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Chinese (zh)
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CN111081519A (en
Inventor
李在京
孙德铉
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Semes Co Ltd
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Semes Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Abstract

The substrate processing apparatus of an embodiment of the present invention may include: an electrostatic chuck disposed on the base and supporting the substrate; a focus ring unit including a first ring and a second ring, the first ring and the second ring being disposed on the base so as to surround an outer circumference of the electrostatic chuck and configured to be movable relative to each other in an up-down direction; and a focus ring driving unit configured to lift the first ring in order to adjust a position of a top surface of the first ring with respect to a top surface of the substrate, and configured to lift the first ring and the second ring together in order to replace the first ring and the second ring.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus.
Background
Generally, a process for manufacturing a semiconductor device includes: an evaporation process for forming a film on a semiconductor wafer (hereinafter, referred to as a substrate), a chemical/mechanical polishing process for planarizing the film, a photolithography process for forming a photolithography pattern on the film, an etching process for forming the film into a pattern having electrical characteristics using the photolithography pattern, an ion implantation process for implanting specific ions into a predetermined region of the substrate, a cleaning process for removing impurities on the substrate, an inspection process for inspecting the surface of the substrate on which the film or the pattern is formed, and the like.
The etching process is a process for removing an exposed region of a photolithography pattern formed on a substrate by a photolithography process. Generally, the etching process can be classified into dry etching (dry etching) and wet etching (wet etching).
In the dry etching process, high-frequency power is applied to an upper electrode and a lower electrode which are provided at a predetermined interval in a sealed internal space where an etching process is performed to form an electric field, the electric field is applied to a reaction gas supplied into the sealed internal space to activate the reaction gas into a plasma state, and then ions in the plasma etch a substrate positioned on the lower electrode.
At this time, it is necessary to uniformly form plasma on the entire top surface of the substrate. The plasma processing apparatus includes a focus ring for uniformly forming plasma on the entire top surface of a substrate.
The focus ring is disposed to surround an edge of an electrostatic chuck disposed on the lower electrode.
An electric field is formed by applying high-frequency power to the upper side of the electrostatic chuck, and the focus ring enlarges a region where the electric field is formed to be larger than a region where the substrate exists. Therefore, the substrate is positioned at the center of the region where the plasma is formed, whereby the substrate can be uniformly etched.
In such a process, a portion of the focus ring is etched because a portion of the focus ring is also exposed to the plasma. If a portion of the focus ring is continuously etched, the height of the top surface of the focus ring relative to the substrate and electrostatic chuck is reduced. As the height of the top surface of the focus ring is reduced, plasma becomes non-uniform above the focus ring, and thus plasma is not uniformly formed above the substrate, thereby causing a problem in that etching accuracy of the substrate is reduced.
Therefore, the focus ring needs to be periodically replaced according to the etching wear of the focus ring. Since the substrate processing process requires a time required to interrupt the replacement of the focus ring, there is a problem in that the operation rate of the substrate processing apparatus is reduced. Further, the periodic replacement of the focus ring causes consumption of the focus ring, which increases the cost, thereby raising the substrate manufacturing cost.
Disclosure of Invention
The present invention has been made to solve the above-described problems of the conventional art, and an object of the present invention is to provide a substrate processing apparatus capable of reducing a replacement cycle of a focus ring and easily performing replacement of the focus ring.
The substrate processing apparatus according to an embodiment of the present invention for achieving the above object may include: an electrostatic chuck disposed on the base and supporting the substrate; a focus ring unit including a first ring and a second ring, the first ring and the second ring being disposed on the base so as to surround an outer circumference of the electrostatic chuck and configured to be movable relative to each other up and down; and a focus ring driving unit configured to lift the first ring in order to adjust a position of a top surface of the first ring with respect to a top surface of the substrate, and configured to lift the first ring and the second ring together in order to replace the first ring and the second ring.
The first ring and the second ring may be made of different materials.
The focus ring driving unit may include: a lift pin; and a lift pin lifting assembly configured to lift the lift pin, the lift pin may include: a first support part selectively contacting the first ring; and a second support portion selectively contacting the second ring.
An insertion groove into which the first support portion is partially inserted may be formed in a bottom surface of the first ring.
A fixing groove into which the second support portion is partially fitted may be formed in a bottom surface of the second ring.
The second ring may be formed with a through hole through which the first support portion passes, and the second support portion may have an outer diameter larger than an inner diameter of the through hole.
The second ring may be formed with a through hole through which the first support portion passes and having a width smaller than a length, the second support portion may be formed to have a width smaller than a length, the length of the second support portion may be smaller than a length of the through hole and larger than a width of the through hole, and the focus ring driving unit may further include a lift pin rotating assembly that rotates the lift pin centering on an extension shaft of the lift pin.
An accommodation groove may be formed in either one of the first ring and the second ring, and a projection portion that is fitted into the accommodation groove may be formed in the other one of the first ring and the second ring.
A support member may be provided on the base for receiving and supporting the second ring.
An insertion groove may be formed in either one of the second ring and the support member, and an insertion projection that is fitted into the insertion groove may be formed in the other one of the second ring and the support member.
According to the substrate processing apparatus of the embodiment of the present invention, the focus ring unit is composed of the first ring and the second ring having different materials from each other. The first ring is made of a material capable of reducing the generation of foreign matter due to a reaction with plasma, and the second ring is made of a material capable of reducing the abrasion due to plasma. Therefore, the focus ring unit including the first ring and the second ring having different materials from each other has an effect of reducing generation of foreign substances by plasma and reducing abrasion by plasma, compared to a structure including one focus ring made of one material.
In addition, according to the substrate processing apparatus of the embodiment of the present invention, the first ring is raised by the abrasion of the first ring, and the height of the top surface of the first ring is always kept constant with respect to the height of the top surface of the substrate, so that the plasma sheath is always kept constant, and the substrate can be uniformly etched as a whole.
In addition, according to the substrate processing apparatus of the embodiment of the present invention, since only the first ring can be selectively raised or the first ring and the second ring can be selectively raised together, it is not necessary to separately provide the lift pin for adjusting the height of the first ring and the lift pin for adjusting the heights of the first ring and the second ring, and thus the structure of the substrate processing apparatus can be simplified.
Drawings
Fig. 1 is a sectional view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 2 is a sectional view schematically showing a part of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 3 is a perspective view schematically showing a lift pin of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 4 to 6 are sectional views schematically showing a part of a substrate processing apparatus according to a first embodiment of the present invention.
Fig. 7 and 8 are perspective views schematically showing a part of a substrate processing apparatus according to a second embodiment of the present invention.
Description of the reference numerals
10: a chamber; 20: an upper electrode; 30: a lower electrode; 70: an electrostatic chuck; 80: a focus ring unit; 90: a focus ring driving unit; 91: a lift pin; 92: a lift pin lift assembly; 93: the lift pin rotating assembly.
Detailed Description
Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.
As shown in fig. 1, the substrate processing apparatus according to the first embodiment of the present invention may include a chamber 10, an upper electrode 20, a lower electrode 30, a gas supply unit 60, an electrostatic chuck 70, a focus ring unit 80, and a focus ring driving unit 90.
The chamber 10 provides a processing space for processing the substrate S using plasma. A film and/or a mask may be formed in a predetermined pattern on the top surface of the substrate S. A passage 11 is formed in a sidewall of the chamber 10. The substrate S can be carried into the processing space in the chamber 10 and carried out from the processing space in the chamber 10 to the outside through the passage 11. The passage 11 is configured to be openable and closable by a gate valve 12.
The upper electrode 20 is disposed at an upper side of the processing space of the chamber 10. The upper electrode 20 may be supported by the chamber 10. The upper electrode 20 includes a gas diffusion chamber 21 and a plurality of gas outflow holes 22 communicating with the gas diffusion chamber 21. Therefore, the process gas flowing into the gas diffusion chamber 21 can be uniformly diffused in the gas diffusion chamber 21 and then can flow into the processing space in the chamber 10 through the gas outflow holes 22.
A first high-frequency power supply 51 is electrically connected to the upper electrode 20 through the first matching unit 41. The first high-frequency power supply 51 functions to apply the first high-frequency power having the frequency for generating plasma to the upper electrode 20. The process gas supplied to the processing space within the chamber 10 is converted into a plasma state by the first high-frequency power applied from the first high-frequency power source 51. The process gas converted into the plasma state etches a specific film formed on the substrate S.
The lower electrode 30 is supported on a pedestal 15 provided on the lower side of the chamber 10. A second rf power supply 52 is electrically connected to the lower electrode 30 via the second matching unit 42. The second high-frequency power supply 52 functions to apply second high-frequency power (high-frequency power for bias) for implanting ions into the substrate S to the lower electrode 30.
The gas supply unit 60 includes: a gas supplier 61 for supplying a process gas; the gas supply unit 61 is connected to a gas supply pipe 62 of the gas diffusion chamber 21 of the upper electrode 20. For example, the gas supplier 61 may include a plurality of gas sources and a plurality of opening and closing valves that respectively connect the plurality of gas sources with the gas supply pipe 62.
The electrostatic chuck 70 is disposed on the lower electrode 30. A substrate S may be mounted on the top surface of the electrostatic chuck 70. The electrostatic chuck 70 is connected to a dc power supply 71. When power is applied from the dc power supply 71 to the electrostatic chuck 70, electrostatic attraction is generated between the substrate S and the electrostatic chuck 70. The substrate S can be electrostatically adsorbed to the top surface of the electrostatic chuck 70 by the generated electrostatic attractive force.
A discharge port 17 is formed at the bottom of the chamber 10. The discharge port 17 is connected to a vacuum pump 18 such as a dry pump. Therefore, the product such as the polymer produced in the substrate processing process can be discharged to the outside through the discharge port 17.
The focus ring unit 80 is disposed at an outer circumferential edge of the lower electrode 30. The focus ring unit 80 is disposed to surround the outer circumference of the substrate S. The focus ring unit 80 serves to improve uniformity of plasma processing on the substrate S.
When high frequency power is applied around the electrostatic chuck 70, an electric field is formed above the substrate S, and the focus ring unit 80 further expands the region where the electric field is formed to position the substrate S at the center of the region where plasma is formed. This enables uniform etching of the substrate S as a whole. In addition, in order to prevent a high molecular compound generated during a substrate processing process from penetrating into the electrostatic chuck 70, the focus ring unit 80 covers and protects the edge of the electrostatic chuck 70.
As shown in fig. 2, the focus ring unit 80 includes: a first ring (upper ring) 81 disposed toward a processing space within the chamber 10; a second ring (lower ring) 82 disposed between the first ring 81 and the base 15. The first ring 81 is disposed closer to a processing space within the chamber 10 than the second ring 82.
The first ring 81 and the second ring 82 may be configured to be movable up and down relative to each other.
The first ring 81 and the second ring 82 are made of different materials. For example, the first ring 81 may be composed of quartz (quartz), and the second ring 82 may be composed of silicon carbide (SiC).
When the first ring 81 and the second ring 82 are both made of silicon carbide, the silicon carbide reacts with silicon (Si) in the substrate processing process to generate foreign matter such as black silicon (black silicon), which causes a decrease in the efficiency of the substrate processing process. Similarly, when the first ring 81 and the second ring 82 are both made of quartz, the plasma etching increases the degree of wear of the first ring 81 and the second ring 82 under the same conditions, and there is a problem that the replacement cycle of the first ring 81 and the second ring 82 becomes short.
In contrast, in the case where the first ring 81 is made of quartz and the second ring 82 is made of silicon carbide, that is, in the case where the first ring 81 is made of a material capable of reducing the generation of foreign matter by the reaction with plasma and the second ring 82 is made of a material capable of reducing the abrasion by plasma, the above-described problem can be minimized as compared with a structure in which one focus ring having one material is provided.
The first ring 81 is directly exposed to plasma and thus is abraded by plasma etching. Therefore, as the process of treating the substrate using the plasma is performed, the first ring 81 is worn away and the thickness of the first ring 81 is reduced. In the case where the thickness of the first ring 81 is reduced, the height of the top surface of the first ring 81 relative to the height of the top surface of the substrate S (the height of the top surface of the electrostatic chuck 70) is reduced. When the height of the top surface of the first ring 81 is reduced in a state where the height of the top surface of the substrate S is not changed, the plasma sheath (sheath) is changed, and thus, the incident angle of ions to the edge side of the substrate S is greatly changed. Thereby, a problem of deformation of the etching cross-sectional profile at the edge of the substrate S may occur.
As a means for preventing such a phenomenon, it is conceivable to replace the first ring 81, but frequent replacement of the first ring 81 causes a decrease in the operation rate of the substrate processing apparatus due to interruption of the substrate processing process, and the cost increases due to consumption of the first ring 81.
Therefore, the substrate processing apparatus according to the embodiment of the present invention finely adjusts the height of the top surface of the first ring 81 by raising the first ring 81 according to the degree of wear of the first ring 81, thereby maintaining the height of the top surface of the first ring 81 constant with respect to the height of the top surface of the substrate S. In addition, in the substrate processing apparatus according to the embodiment of the present invention, when the abrasion of the first ring 81 progresses to a considerable level and the first ring 81 needs to be replaced, the second ring 82 is raised together with the first ring 81 so that the first ring 81 can be replaced by the robot.
As shown in fig. 1 and 2, the focus ring driving unit 90 is disposed below the base 15. The focus ring driving unit 90 may include lift pins 91 and a lift pin elevating assembly 92 configured to elevate the lift pins 91.
The base 15 may be formed with a through hole 151 into which the lift pin 91 is inserted so as to be able to be raised and lowered. The lift pin 91 penetrates the through hole 151 and is connected to the focus ring unit 80. Therefore, as the lift pins 91 are lifted, the focus ring unit 80 can be lifted. The lift pin 91 may be provided in plurality to enable stable support of the focus ring unit 80. The number, arrangement interval, and arrangement position of the plurality of lift pins 91 may be appropriately set so that the focus ring unit 80 can be stably supported.
The lift pin 91 may include: a first support portion 911 configured to be contactable with the first ring 81; and a second support portion 912 configured to be selectively contactable with the second ring 82. A through hole 821 through which the first support portion 911 passes is formed in the second ring 82. The first support portion 911 can be exposed through the through hole 821 and contact the bottom surface of the first ring 81. The distance between the portion in contact with the first support portion 911 of the first ring 81 and the portion in contact with the second support portion 912 of the second ring 82 is larger than the thickness of the portion of the second ring 82 in which the through hole 821 is formed. Therefore, the following sections can exist in the lifting path of the lift pin 91: the first support portion 911 contacts the bottom surface of the first ring 81, but the second support portion 912 does not contact the bottom surface of the second ring 82.
As an example, as shown in fig. 2 and 3, the second support portion 912 may have an outer diameter larger than an inner diameter of the through hole 821. Accordingly, the second ring 82 can be raised as the lift pins 91 are raised in a state where the second support portion 912 is in contact with the bottom surface of the second ring 82.
For example, as shown in fig. 3, the first support portion 911 and the second support portion 912 may be formed as separate members. A plurality of fastening grooves 913 may be formed in the first support portion 911 in the longitudinal direction thereof, and a fastening hole 914 corresponding to any one of the plurality of fastening grooves 913 may be formed in the second support portion 912. In a state where the fastening hole 914 corresponds to any of the plurality of fastening grooves 913, the second support portion 912 can be fastened to the first support portion 911 by inserting a fastening member 915 such as a bolt into the fastening hole 914 and the fastening groove 913. Further, as the tightening member 915 is inserted into any one of the plurality of tightening grooves 913, the position of the second supporting portion 912 can be determined. Therefore, the interval between the portion in contact with the first support portion 911 of the first ring 81 and the portion in contact with the second support portion 912 of the second ring 82 can be adjusted, and thereby the interval between the time point when the first support portion 911 is in contact with the first ring 81 and the time point when the second support portion 912 is in contact with the second ring 82 can be adjusted by the lift pin 91 being lifted.
On the other hand, an insertion groove 811 into which the first support portion 911 is partially inserted may be formed on the bottom surface of the first ring 81. Since the first support portion 911 is fitted into the fitting groove 811 of the first ring 81, the position of the lift pin 91 with respect to the first ring 81 can be easily and accurately determined, and the first ring 81 can be stably supported by the lift pin 91 without lateral rattling.
Further, a fixing groove 823 into which the second support portion 912 is partially fitted may be formed in the bottom surface of the second ring 82. Since the second support portion 912 is fitted into the fixing groove 823 of the second ring 82, the position of the lift pin 91 with respect to the second ring 82 can be easily and accurately determined, and the second ring 82 can be stably supported by the lift pin 91 without lateral play.
In addition, an accommodation groove 815 may be formed at the first ring 81, and a projection 825 fitted into the accommodation groove 815 may be formed at the second ring 82. When the first ring 81 and the second ring 82 are placed, the projecting portion 825 is fitted into the receiving groove 815, and therefore, the position of the first ring 81 and the second ring 82 can be easily and accurately determined, and the first ring 81 and the second ring 82 can be stably held without lateral play. In addition, the structure including the protrusion 825 and the accommodation groove 815 can prevent plasma from penetrating between the first ring 81 and the second ring 82 when the first ring 81 is raised to a predetermined height. On the other hand, the present invention is not limited to the structure in which the accommodating groove 815 is formed in the first ring 81 and the projecting portion 825 is formed in the second ring 82, and the projecting portion may be formed in the first ring 81 and the accommodating groove into which the projecting portion is fitted may be formed in the second ring 82.
On the other hand, the base 15 may be provided with a support member 83 for receiving and supporting the second ring 82. Therefore, the second ring 82 can be stably supported by the base 15. Here, an insertion groove 826 may be formed in the second ring 82, and an insertion projection 836 that is fitted into the insertion groove 826 may be formed in the support member 83. When the second ring 82 is seated on the support member 83, the insertion projection 836 is fitted into the insertion groove 826, and therefore, the position determination of the second ring 82 can be performed easily and accurately, and the second ring 82 can be held stably without lateral rattling. On the other hand, the present invention is not limited to the structure in which the insertion groove 826 is formed in the second ring 82 and the insertion projection 836 is formed in the support member, but the insertion projection may be formed in the second ring 82 and the insertion groove into which the insertion projection is fitted may be formed in the support member 83.
The lift pin lifting assembly 92 may be comprised of an actuator operating under pneumatic or hydraulic pressure, a linear movement mechanism such as a linear motor or a ball screw mechanism operating under electromagnetic interaction. The lift pin lifting assembly 92 can lift only the first ring 81 or both the first ring 81 and the second ring 82 by lifting the lift pins 91.
As shown in fig. 2, the first ring 81 may have a first thickness t1 when exposure to plasma begins around the electrostatic chuck 70. Further, as shown in fig. 4, as the process of treating the substrate S using the plasma is performed, the first ring 81 is exposed to the plasma, etched and abraded, and thus, the first ring 81 has a second thickness t2 smaller than the first thickness t1. Accordingly, the height of the top surface of the first ring 81 is reduced relative to the height of the top surface of the electrostatic chuck 70.
In this case, as shown in fig. 5, the lift pin raising and lowering unit 92 raises the lift pin 91, and the first support portion 911 comes into contact with the bottom surface of the first ring 81, thereby raising the first ring 81. Therefore, even when the first ring 81 is worn and has the second thickness t2 smaller than the first thickness t1, the height of the top surface of the first ring 81 can be kept constant with respect to the height of the top surface of the electrostatic chuck 70. Therefore, the plasma sheath is prevented from being changed, and the etching cross-sectional profile is prevented from being changed at the edge of the substrate S, so that the substrate S can be uniformly etched as a whole.
At this time, the second ring 82 may not rise together with the first ring 81. Therefore, the penetration of plasma between the first ring 81 and the second ring 82 can be prevented by the projecting portion 825 and the accommodating groove 815 between the first ring 81 and the second ring 82. In addition, in the case where the inner diameter of the second ring 82 is smaller than the outer diameter of the substrate S (for example, in the case where the inner diameter of the second ring 82 is 297 to 298mm and the outer diameter of the substrate S is 300 mm), the second ring 82 does not rise together with the first ring 81 in order to prevent the substrate S from rising following the rise of the second ring 82.
On the other hand, when the abrasion due to the etching of the first ring 81 progresses to a certain level and it is difficult to compensate for the height of the first ring 81 by adjusting the height, it is necessary to lift the first ring 81 and the second ring 82 together to a height at which the robot arm can grip and replace the first ring 81 and the second ring 82.
Therefore, the lift pin raising and lowering unit 92 raises the lift pin 91 so that the second support portion 912 comes into contact with the bottom surface of the second ring 82. Thereby, the first support portion 911 contacts the bottom surface of the first ring 81, and the second support portion 912 contacts the bottom surface of the second ring 82. In this state, as the lift pin 91 is raised, the first ring 81 and the second ring 82 can be positioned at a height where they can be carried out by the robot arm, as shown in fig. 6.
According to the substrate processing apparatus of the first embodiment of the present invention, the focus ring unit 80 is composed of the first ring 81 and the second ring 82 having different materials from each other. The first ring 81 is made of a material capable of reducing the generation of foreign matter due to a reaction with plasma, and the second ring 82 is made of a material capable of reducing the abrasion due to plasma. Therefore, the focus ring unit 80 including the first ring 81 and the second ring 82 having different materials from each other has an effect of reducing generation of foreign substances by plasma and reducing abrasion by plasma, compared to a structure including one focus ring made of one material.
In addition, according to the substrate processing apparatus of the first embodiment of the present invention, the first ring 81 is raised according to the abrasion of the first ring 81, the height of the top surface of the first ring 81 is always kept constant with respect to the height of the top surface of the substrate S, and the plasma sheath is always kept constant, so that the substrate S can be uniformly etched as a whole.
In addition, according to the substrate processing apparatus according to the first embodiment of the present invention, since only the first ring 81 can be selectively raised or the first ring 81 and the second ring 82 can be selectively raised together, it is not necessary to separately provide the lift pins for adjusting the height of the first ring 81 and the lift pins for adjusting the heights of the first ring 81 and the second ring 82, and the structure of the substrate processing apparatus can be simplified.
Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to fig. 7 and 8. The same portions as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
The second ring 82 is formed with a through hole 822 having a width smaller than a length, the second support portion 912 is formed to have a width smaller than a length, and the length of the second support portion 912 may be smaller than the length of the through hole 822 and larger than the width of the through hole 822.
Also, the focus ring driving unit 90 may further include a lift pin rotating assembly 93 that rotates the lift pin 91 centering on an extended axis of the lift pin 91.
Therefore, as shown in fig. 7, in the case where the shape of the through hole 822 matches the shape of the second support portion 912 by the rotation of the lift pin 91, the second support portion 912 can pass through the through hole 822.
As shown in fig. 8, when the shape of the through hole 822 does not match the shape of the second support portion 912 due to the rotation of the lift pin 91, the second support portion 912 can contact the bottom surface of the second ring 82 without passing through the through hole 822.
As shown in fig. 7, when the lift pin 91 is raised in a state where the first support portion 911 is in contact with the bottom surface of the first ring 81 and the second support portion 912 is inserted through the through hole 822, only the first ring 81 can be raised.
As shown in fig. 8, when the lift pin 91 is raised in a state where the first support portion 911 is in contact with the bottom surface of the first ring 81 and the second support portion 912 is not inserted through the through hole 822 and is in contact with the bottom surface of the second ring 82, the first ring 81 and the second ring 82 can be raised together.
The substrate processing apparatus according to the second embodiment of the present invention has an effect that the second support portion 912 does not interfere with the second ring 82 and the height of the first ring 81 can be freely selected. That is, as shown in fig. 3, the first ring 81 can be raised to a higher position without adjusting the height of the second support portion 912. In order to replace the first ring 81 and the second ring 82 in a state where the second support portion 912 has passed through the through hole 822 and has risen to a high degree, the lift pin 91 is lowered to reposition the second support portion 912 below the second ring 82, and then the lift pin 91 is rotated to make the shape of the through hole 822 not match the shape of the second support portion 912, and then the lift pin 91 is raised.
The preferred embodiments of the present invention have been described as examples, but the scope of the present invention is not limited to the specific embodiments, and may be modified as appropriate within the scope described in the claims.

Claims (10)

1. A substrate processing apparatus comprising:
an electrostatic chuck disposed on the base and supporting the substrate;
a focus ring unit including a first ring and a second ring, the first ring and the second ring being disposed on the base so as to surround an outer circumference of the electrostatic chuck and configured to be movable relative to each other in a vertical direction; and
a focus ring driving unit configured to lift the first ring by a lift pin in order to adjust a position of a top surface of the first ring with respect to a top surface of the substrate, and configured to lift the first ring and the second ring together by the lift pin in order to replace the first ring and the second ring,
the first ring is raised or the first ring and the second ring are raised together according to a rising height of the lift pin.
2. The substrate processing apparatus according to claim 1,
the first ring and the second ring are made of different materials.
3. The substrate processing apparatus according to claim 1,
the focus ring driving unit includes: the lift pin; and a lift pin lifting unit configured to lift the lift pin,
the lift pin includes: a first support portion selectively contacting the first ring; and a second support portion selectively contacting the second ring.
4. The substrate processing apparatus according to claim 3,
an insertion groove into which the first support portion is partially inserted is formed in a bottom surface of the first ring.
5. The substrate processing apparatus according to claim 3,
a fixing groove into which the second support is partially fitted is formed in a bottom surface of the second ring.
6. The substrate processing apparatus according to claim 3,
a through hole through which the first support portion passes is formed in the second ring, and the second support portion has an outer diameter larger than an inner diameter of the through hole.
7. The substrate processing apparatus according to claim 3,
a through hole through which the first support portion passes and having a width smaller than a length is formed in the second ring, the second support portion is formed to have a width smaller than a length, the length of the second support portion is smaller than the length of the through hole and is larger than the width of the through hole,
the focus ring driving unit further includes a lift pin rotating assembly that rotates the lift pin centering on an extension axis of the lift pin.
8. The substrate processing apparatus according to claim 1,
an accommodation groove is formed in one of the first ring and the second ring, and a projection fitted into the accommodation groove is formed in the other of the first ring and the second ring.
9. The substrate processing apparatus according to claim 1,
a support member is provided on the base for receiving and supporting the second ring.
10. The substrate processing apparatus according to claim 9,
an insertion groove is formed in either one of the second ring and the support member, and an insertion projection that is fitted into the insertion groove is formed in the other of the second ring and the support member.
CN201910986841.7A 2018-10-18 2019-10-17 Substrate processing apparatus Active CN111081519B (en)

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TWM602283U (en) * 2019-08-05 2020-10-01 美商蘭姆研究公司 Edge ring with lift pin grooves for a substrate processing system
CN113838732B (en) * 2020-06-08 2023-10-31 中微半导体设备(上海)股份有限公司 Focusing ring lifting mechanism, installation method and plasma processing device
CN113972124B (en) * 2020-07-23 2023-09-29 中微半导体设备(上海)股份有限公司 Grounding assembly, plasma processing device and working method thereof
CN111863695A (en) * 2020-07-31 2020-10-30 上海华力微电子有限公司 Electrostatic chuck device and dry etching machine
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