KR102256214B1 - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus according to an embodiment of the present invention includes an electrostatic chuck disposed on a base to support a substrate; A focus ring unit including first and second rings disposed on the base so as to surround the outer circumference of the electrostatic chuck and configured to be relatively movable vertically; And a focus ring drive unit comprising a lift pin and a lift pin lift module configured to lift the lift pin and the lift pin, wherein the focus ring drive unit is a lift pin to adjust a position of an upper surface of the first ring with respect to the upper surface of the substrate. It is configured to raise the first ring by raising the first ring, and may be configured to raise the first and second rings together by raising the lift pin to replace the first and second rings.

Description

Substrate processing apparatus {SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus.

In general, the process of manufacturing a semiconductor device includes a deposition process for forming a film on a semiconductor wafer (hereinafter referred to as a substrate), a chemical/mechanical polishing process for flattening the film, and a photoresist pattern for forming a photoresist pattern on the film. A photolithography process, an etching process for forming a film into a pattern having electrical characteristics using a photoresist pattern, an ion implantation process for implanting specific ions into a predetermined region of the substrate, and a cleaning process for removing impurities on the substrate It includes a process and an inspection process for inspecting the surface of the substrate on which the film or pattern is formed.

The etching process is a process for removing an exposed area of a photoresist pattern formed on a substrate by a photolithography process. In general, types of etching processes can be classified into dry etching and wet etching.

In the dry etching process, high-frequency power is applied to the upper electrode and the lower electrode installed at predetermined intervals in the enclosed inner space where the etching process is performed to form an electric field, and an electric field is applied to the reaction gas supplied into the enclosed space to activate the reaction gas. After making a plasma state, ions in the plasma are allowed to etch the substrate located on the lower electrode.

At this time, it is necessary to uniformly form the plasma over the entire upper surface of the substrate. A focus ring is provided to uniformly form plasma over the entire upper surface of the substrate.

The focus ring is installed to surround the edge of the electrostatic chuck disposed on the lower electrode.

An electric field is formed on the top of the electrostatic chuck by applying high-frequency power, and the focus ring greatly expands the area where the electric field is formed compared to the area where the substrate is located. Accordingly, the substrate is positioned at the center of the region where the plasma is formed, and thus, the substrate can be uniformly etched.

In this process, a part of the focus ring is also exposed to plasma, so that a part of the focus ring is etched. When a portion of the focus ring is continuously etched, the height of the upper surface of the focus ring with respect to the substrate and the electrostatic chuck decreases. As the height of the upper surface of the focus ring is lowered, the plasma on the upper portion of the focus ring becomes non-uniform. Accordingly, since the plasma is not uniformly formed on the substrate, the etching accuracy of the substrate decreases.

Therefore, the focus ring needs to be periodically replaced according to the wear caused by the etching of the focus ring. Since the substrate processing process must be stopped for the amount of time required to replace the focus ring, there is a problem that the operation rate of the substrate processing apparatus is lowered. In addition, periodic replacement of the focus ring causes an increase in cost due to consumption of the focus ring, and thus, there is a problem of increasing the manufacturing cost of the substrate.

The present invention is to solve the problems of the prior art, and an object of the present invention is to provide a substrate processing apparatus capable of easily performing the replacement of the focus ring while reducing the replacement cycle of the focus ring. In having to.

A substrate processing apparatus according to an embodiment of the present invention for achieving the above object includes: an electrostatic chuck disposed on a base to support a substrate; A focus ring unit including first and second rings disposed on the base so as to surround the outer circumference of the electrostatic chuck and configured to be relatively movable vertically; And a focus ring drive unit comprising a lift pin and a lift pin lift module configured to lift the lift pin and the lift pin, wherein the focus ring drive unit is a lift pin to adjust a position of an upper surface of the first ring with respect to the upper surface of the substrate. It is configured to raise the first ring by raising the first ring, and may be configured to raise the first and second rings together by raising the lift pin to replace the first and second rings.

The first and second rings may be made of different materials.

The lift pin may include a support portion that selectively contacts the first ring.

A fitting groove into which the support part is partially fitted may be formed on the lower surface of the first ring.

The second ring may have a through hole that passes through the support and has a width smaller than that of the length.

The focus ring driving unit may further include a lift pin rotation module that rotates the lift pin about an extension axis of the lift pin.

One of the first and second rings may have a receiving groove, and the other of the first and second rings may have a protrusion fitted into the receiving groove.

A support member on which the second ring is seated and supported may be provided on the base.

An insertion groove may be formed in one of the second ring and the support member, and an insertion protrusion fitted into the insertion groove may be formed in the other of the second ring and the support member.

According to the substrate processing apparatus according to the embodiment of the present invention, the focus ring unit is composed of first and second rings having different materials. In addition, the first ring is made of a material capable of reducing the generation of foreign substances by reaction with the plasma, and the second ring is made of a material capable of reducing abrasion due to plasma. Accordingly, the focus ring unit including first and second rings having different materials reduces the generation of foreign substances by plasma and reduces wear by plasma, compared to a configuration in which one focus ring made of one material is provided. It has an effect in that it reduces.

Further, according to the substrate processing apparatus according to the embodiment of the present invention, by raising the first ring according to the wear of the first ring, the height of the upper surface of the first ring relative to the height of the upper surface of the substrate is always kept constant, Plasma sheath is always kept constant, so that the entire substrate can be uniformly etched.

In addition, according to the substrate processing apparatus according to the embodiment of the present invention, since only the first ring can be selectively raised, or the first and second rings can be selectively raised together, a lift for adjusting the height of the first ring Since it is not necessary to separately provide a pin and a lift pin for adjusting the height of the first and second rings, the configuration of the substrate processing apparatus can be simplified.

1 is a schematic cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention.
2 is a schematic cross-sectional view of a portion of the substrate processing apparatus according to the first embodiment of the present invention.
3 is a schematic perspective view of a lift pin of the substrate processing apparatus according to the first embodiment of the present invention.
4 and 5 are cross-sectional views schematically illustrating a part of a substrate processing apparatus according to a first embodiment of the present invention.
7 and 8 are perspective views schematically showing a part of a substrate processing apparatus according to a second embodiment of the present invention.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings.

1, the substrate processing apparatus according to the first embodiment of the present invention includes a chamber 10, an upper electrode 20, a lower electrode 30, a gas supply unit 60, and An electrostatic chuck 70, a focus ring unit 80, and a focus ring driving unit 90 may be included.

The chamber 10 provides a processing space for processing the substrate S using plasma. A film and/or a mask may be formed on the upper surface of the substrate S in a predetermined pattern. A passage 11 is formed on the side wall of the chamber 10. The substrate S may be carried into the processing space in the chamber 10 through the passage 11, and the substrate S may be carried out from the processing space in the chamber 10. The passage 11 is configured to be openable and closed by the gate valve 12.

The upper electrode 20 is installed above the processing space of the chamber 10. The upper electrode 20 may be supported on the chamber 10. The upper electrode 20 includes a gas diffusion chamber 21 and a plurality of gas outlet holes 22 communicating with the gas diffusion chamber 21. Accordingly, the process gas introduced into the gas diffusion chamber 21 may be uniformly diffused in the gas diffusion chamber 21 and then introduced into the processing space in the chamber 10 through the gas outlet hole 22.

The first high frequency power source 51 is electrically connected to the upper electrode 20 through a first matcher 41. The first high frequency power source 51 serves to apply a first high frequency power having a frequency for generating plasma to the upper electrode 20. The process gas supplied to the processing space in the chamber 10 is converted into a plasma state by the first high frequency power applied from the first high frequency power source 51. The process gas converted to the plasma state etch a specific film formed on the substrate S.

The lower electrode 30 is supported on a base 15 provided below the chamber 10. The second high frequency power source 52 is electrically connected to the lower electrode 30 through a second matcher 42. The second high frequency power source 52 serves to apply a second high frequency power (high frequency power for bias) for implanting ions into the substrate S to the lower electrode 30.

The gas supply unit 60 includes a gas supply 61 for supplying a process gas, and a gas supply pipe 62 connecting the gas supply 61 to the gas diffusion chamber 21 of the upper electrode 20. For example, the gas supplier 61 may include a plurality of gas sources, a plurality of opening/closing valves respectively connecting the plurality of gas sources and the gas supply pipe 62.

The electrostatic chuck 70 is installed on the lower electrode 30. The substrate S may be mounted on the upper surface of the electrostatic chuck 70. The electrostatic chuck 70 is connected to the DC power supply 71. When power is applied from the DC power supply 71 to the electrostatic chuck 70, electrostatic attraction is generated between the substrate S and the electrostatic chuck 70. The substrate S may be electrostatically adsorbed onto the upper surface of the electrostatic chuck 70 by the generated electrostatic attraction.

An outlet 17 is formed in the lower part of the chamber 10. The outlet 17 is connected to a vacuum pump 18 such as a dry pump. Accordingly, a product material such as a polymer generated during the substrate processing process may be discharged to the outside through the discharge port 17.

The focus ring unit 80 is disposed around the outer circumference of the lower electrode 30. The focus ring unit 80 is disposed to surround the outer periphery of the substrate S. The focus ring unit 80 serves to improve the uniformity of plasma processing on the substrate S.

When high-frequency power is applied around the electrostatic chuck 70, an electric field is formed on the upper side of the substrate S, and the focus ring unit 80 further expands the area where the electric field is formed so that the substrate S is an area where plasma is formed Place it in the center of. Accordingly, the entire substrate S may be uniformly etched. In addition, in order to prevent the polymer compound generated during the substrate processing process from penetrating into the electrostatic chuck 70, the focus ring unit 80 covers and protects the edge of the electrostatic chuck 70.

As shown in FIG. 2, the focus ring unit 80 includes a first ring (upper ring) 81 disposed toward the processing space in the chamber 10, and between the first ring 81 and the base 15. It includes a second ring (lower ring) 82 disposed in the. The first ring 81 is disposed closer to the processing space in the chamber 10 than the second ring 82.

The first and second rings 81 and 82 may be configured to be relatively movable up and down, respectively.

The first and second rings 81 and 82 are made of different materials. For example, the first ring 81 may be made of quartz, and the second ring 82 may be made of silicon carbide (SiC).

When both the first and second rings 81 and 82 are made of silicon carbide, the silicon carbide reacts with silicon (Si) during the substrate processing process to generate a foreign material such as black silicon. There is a problem that acts as a cause of lowering the efficiency of the treatment process. Similarly, when both the first and second rings 81 and 82 are made of quartz, the wear of the first and second rings 81 and 82 increases under the same conditions due to plasma etching, resulting in the first and second rings. There is a problem that the replacement cycle of (81, 82) is shortened.

On the other hand, when the first ring 81 is made of quartz and the second ring 82 is made of silicon carbide, that is, the first ring 81 is made of a material capable of reducing the generation of foreign substances due to reaction with plasma. In the case where the second ring 82 is made of a material capable of reducing abrasion due to plasma, the above-described problem can be minimized compared to a configuration in which one focus ring having one material is provided.

Since the first ring 81 is directly exposed to plasma, it is etched and worn by the plasma. Accordingly, as the process of processing the substrate using plasma proceeds, the first ring 81 may be worn and the thickness of the first ring 81 may be reduced. When the thickness of the first ring 81 decreases, the height of the upper surface of the first ring 81 with respect to the height of the upper surface of the substrate S (the height of the upper surface of the electrostatic chuck 70) decreases. When the height of the upper surface of the first ring 81 decreases while the height of the upper surface of the substrate S does not change, the plasma sheath changes, and accordingly, ions toward the edge of the substrate S The angle of incidence of is severely changed. Accordingly, there may be a problem that the etching profile at the edge of the substrate S is deformed.

As a method to prevent this phenomenon, a method of replacing the first ring 81 may be considered, but frequent replacement of the first ring 81 lowers the operation rate of the substrate processing apparatus due to the interruption of the substrate processing process, and the first The consumption of the ring 81 causes an increase in cost.

Accordingly, in the substrate processing apparatus according to the embodiment of the present invention, by finely adjusting the height of the upper surface of the first ring 81 by raising the first ring 81 according to the wear degree of the first ring 81, the substrate The height of the upper surface of the first ring 81 with respect to the height of the upper surface of (S) is kept constant. In addition, in the substrate processing apparatus according to the embodiment of the present invention, when the wear of the first ring 81 proceeds to a considerable level, and the replacement of the first ring 81 is required, the first ring 81 is used by the robot arm. ) Raises the second ring 82 together with the first ring 81 so that it can be replaced.

1 and 2, the focus ring driving unit 90 is disposed under the base 15. The focus ring drive unit 90 may include a lift pin 91 and a lift pin lift module 92 configured to lift the lift pin 91.

A through hole 151 into which the lift pin 91 is inserted so as to be elevated may be formed in the base 15. The lift pin 91 passes through the through hole 151 and is connected to the focus ring unit 80. Accordingly, the focus ring unit 80 may be raised or lowered as the lift pin 91 is raised or lowered. A plurality of lift pins 91 may be provided to stably support the focus ring unit 80. The number, arrangement interval, and arrangement position of the plurality of lift pins 91 may be appropriately set so as to stably support the focus ring unit 80.

The lift pin 91 may include a first support part 911 configured to be in contact with the first ring 81 and a second support part 912 configured to be selectively in contact with the second ring 82. have. A through hole 821 through which the first support part 911 passes is formed in the second ring 82. The first support part 911 may be exposed through the through hole 821 to contact the lower surface of the first ring 81. The distance between the portion of the first support portion 911 in contact with the first ring 81 and the portion of the second support portion 912 in contact with the second ring 82 is a second ring in which the through hole 821 is formed. It is larger than the thickness of the part of (82). Therefore, in the lifting path of the lift pin 91, the first support portion 911 contacts the lower surface of the first ring 81, but the second support portion 912 does not contact the lower surface of the second ring 82 Can exist.

As an example, as shown in FIGS. 2 and 3, the second support 912 may have an outer diameter larger than the inner diameter of the through hole 821. Accordingly, as the lift pin 91 rises while the second support 912 is in contact with the lower surface of the second ring 82, the second ring 82 may rise.

For example, as shown in FIG. 3, the first support part 911 and the second support part 912 may be configured as separate members. A plurality of fastening grooves 913 are formed in the first support part 911 in the longitudinal direction, and a fastening hole 914 corresponding to any one of the plurality of fastening grooves 913 is formed in the second support part 912. I can. In a state in which the fastening hole 914 corresponds to any one of the plurality of fastening grooves 913, as the fastening member 915 such as a screw is inserted into the fastening hole 914 and the fastening groove 913, the second support part The 912 may be fastened to the first support part 911. In addition, as the fastening member 915 is inserted into any one of the plurality of fastening grooves 913, the position of the second support part 912 may be determined. Accordingly, the distance between the portion of the first support portion 911 in contact with the first ring 81 and the portion of the second support portion 912 in contact with the second ring 82 can be adjusted, and accordingly, the lift Between the time point when the first support part 911 comes into contact with the first ring 81 and the time point when the second support part 912 comes into contact with the second ring 82 by raising the pin 91 The time interval can be adjusted.

Meanwhile, a fitting groove 811 into which the first support part 911 is partially fitted may be formed on a lower surface of the first ring 81. Since the first support 911 is fitted into the fitting groove 811 of the first ring 81, positioning of the lift pin 91 relative to the first ring 81 can be easily and accurately performed, and the first The ring 81 can be stably supported on the lift pin 91 without shaking in the transverse direction.

In addition, a fixing groove 823 into which the second support 912 is partially fitted may be formed on the lower surface of the second ring 82. Since the second support 912 is fitted into the fitting groove 823 of the second ring 82, positioning of the lift pin 91 relative to the second ring 82 can be easily and accurately performed, and the second The ring 82 can be stably supported on the lift pin 91 without shaking in the transverse direction.

*In addition, a receiving groove 815 may be formed in the first ring 81, and a protrusion 825 that is fitted into the receiving groove 815 may be formed in the second ring 82. When seated on the first and second rings 81 and 82, the protrusion 825 is fitted into the receiving groove 815, so positioning of the first and second rings 81 and 82 is performed easily and accurately. The first and second rings 81 and 82 can be stably maintained without shaking in the transverse direction. In addition, the configuration including the protrusion 825 and the receiving groove 815 prevents the plasma from penetrating between the first and second rings 81 and 82 when the first ring 81 is raised to a predetermined height. Can be prevented. On the other hand, the present invention is not limited to the configuration in which the receiving groove 815 is formed in the first ring 81 and the protrusion 825 is formed in the second ring 82, and the protrusion is in the first ring 81 The second ring 82 may be provided with a receiving groove into which the protrusion is fitted.

Meanwhile, a support member 83 on which the second ring 82 is seated and supported may be provided on the base 15. Accordingly, the second ring 82 may be stably supported on the base 15. Here, an insertion groove 826 may be formed in the second ring 82, and an insertion protrusion 836 fitted into the insertion groove 826 may be formed in the support member 83. When the second ring 82 is seated on the support member 83, since the insertion protrusion 836 is fitted into the insertion groove 826, positioning of the second ring 82 can be performed easily and accurately, and , The second ring 82 can be stably maintained without shaking in the transverse direction. On the other hand, the present invention is not limited to the configuration in which the insertion groove 826 is formed in the second ring 82 and the insertion protrusion 836 is formed in the support member, and the insertion protrusion is formed in the second ring 82 , An insertion groove into which the insertion protrusion is inserted into the support member 83 may be formed.

The lift pin lifting module 92 may be composed of a linear movement mechanism such as an actuator operated by pneumatic or hydraulic pressure, a linear motor using electromagnetic interaction, or a ball screw device. The lift pin lifting module 92 may raise only the first ring 81 by lifting the lift pin 91 or may raise the first and second rings 81 and 82 together.

As shown in FIG. 2, when the periphery of the electrostatic chuck 70 begins to be exposed to plasma, the first ring 81 may have a first thickness t1. And, as shown in FIG. 4, as the process of processing the substrate S using plasma proceeds, the first ring 81 is exposed to the plasma, etched, and abraded. Accordingly, the first ring 81 The ring 81 has a second thickness t2 smaller than the first thickness t1. Accordingly, the height of the upper surface of the first ring 81 with respect to the height of the upper surface of the electrostatic chuck 70 decreases.

In this case, as shown in FIG. 5, the lift pin lifting module 92 raises the lift pin 911 so that the first support part 911 comes into contact with the lower surface of the first ring 81, so that the first ring (81) can be raised. Therefore, even when the first ring 81 is worn and has a second thickness t2 smaller than the first thickness t1, the height of the upper surface of the first ring 81 is It can be kept constant with respect to the height. Accordingly, since the plasma sheath is prevented from changing and the etching profile at the edge of the substrate S is prevented from changing, the substrate S can be etched uniformly as a whole.

In this case, the second ring 82 may not rise together with the first ring 81. Accordingly, penetration of plasma between the first and second rings 81 and 82 may be prevented by the protrusion 825 and the receiving groove 815 between the first and second rings 81 and 82. In addition, when the inner diameter of the second ring 82 is smaller than the outer diameter of the substrate S (for example, the inner diameter of the second ring 82 is 297 to 298 mm, and the outer diameter of the substrate S is 300 mm) In the case of), the second ring 82 does not rise together with the first ring 81 in order to prevent the substrate S from rising according to the rising of the second ring 82.

On the other hand, if the wear caused by the etching of the first ring 81 proceeds to a considerable level and it is difficult to compensate even by adjusting the height of the first ring 81, the robot arm is used for the first and second rings 81 and 82 It is necessary to raise the first and second rings 81 and 82 together to a height that can be replaced by gripping.

To this end, the lift pin lifting module 92 raises the lift pin 91 so that the second support 912 contacts the lower surface of the second ring 82. Accordingly, the first support 911 is in contact with the lower surface of the first ring 81 and the second support 912 is in contact with the lower surface of the second ring 82. In this state, as the lift pin 91 rises, as shown in FIG. 6, the first and second rings 81 and 82 may be positioned at a height capable of being carried out by the robot arm.

According to the substrate processing apparatus according to the first embodiment of the present invention, the focus ring unit 80 is composed of first and second rings 81 and 82 having different materials. In addition, the first ring 81 is made of a material capable of reducing the generation of foreign substances by reaction with the plasma, and the second ring 82 is made of a material capable of reducing abrasion due to plasma. Therefore, the focus ring unit 80 including the first and second rings 81 and 82 having different materials is compared with a configuration in which one focus ring made of one material is provided, It is effective in that it reduces generation and reduces abrasion by plasma.

In addition, according to the substrate processing apparatus according to the first embodiment of the present invention, by raising the first ring 81 according to the wear of the first ring 81, the first ring relative to the height of the upper surface of the substrate S By always maintaining the height of the upper surface of 81, the plasma sheath is always kept constant, so that the entire substrate S can be uniformly etched.

In addition, according to the substrate processing apparatus according to the first embodiment of the present invention, since only the first ring 81 can be selectively raised, or the first and second rings 81 and 82 can be selectively raised together. , Since there is no need to separately provide a lift pin for adjusting the height of the first ring 81 and a lift pin for adjusting the height of the first and second rings 81, 82, the configuration of the substrate processing apparatus can be simplified. I can.

Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 7 and 8. The same reference numerals are assigned to the same parts as those in the above-described first embodiment, and detailed descriptions thereof will be omitted.

The second ring 82 has a through hole 822 having a smaller width than the length, the second support 912 has a smaller width than the length, and the length of the second support 912 is a through hole ( It may be smaller than the length of 822) and larger than the width of the through hole 822.

In addition, the focus ring driving unit 90 may further include a lift pin rotation module 93 that rotates the lift pin 91 about an extension axis of the lift pin 91.

Therefore, as shown in FIG. 7, when the shape of the through hole 822 and the shape of the second support 912 match with the rotation of the lift pin 91, the second support 912 is the through hole ( 822).

And, as shown in Fig. 8, when the shape of the through hole 822 and the shape of the second support 912 do not match by the rotation of the lift pin 91, the second support 912 is a through hole It is possible to contact the lower surface of the second ring 82 without passing through 822.

As shown in FIG. 7, the lift pin 91 rises in a state in which the first support 911 contacts the lower surface of the first ring 81 and the second support 912 passes through the through hole 822 In this case, only the first ring 81 can be raised.

And, as shown in Figure 8, the first support 911 is in contact with the lower surface of the first ring 81 and the second support 912 does not pass through the through hole 822, the second ring 82 When the lift pin 91 rises while in contact with the lower surface of the first and second rings 81 and 82, the first and second rings 81 and 82 may rise together.

In the substrate processing apparatus according to the second embodiment of the present invention, the second support 912 and the second ring 82 do not interfere, and there is an effect that the rising height of the first ring 81 can be freely selected. That is, even if the height of the second support part 912 is not adjusted as shown in FIG. 3, the first ring 81 can be raised to a higher position. In order to replace the first ring 81 and the second ring 82 while the second support part 912 passes through the through hole 822 and rises high, the lift pin 91 is lowered and the second support part ( After placing 912 again under the second ring 82, the lift pin 91 is rotated so that the shape of the through hole 822 and the shape of the second support 912 do not match, and then the lift pin 91 ) Can be raised.

Although preferred embodiments of the present invention have been described exemplarily, the scope of the present invention is not limited to such specific embodiments, and may be appropriately changed within the scope described in the claims.

10: chamber
20: upper electrode
30: lower electrode
70: electrostatic chuck
80: focus ring unit
90: focus ring drive unit
91: lift pin
92: lift pin lifting module
93: lift pin rotation module

Claims (9)

An electrostatic chuck disposed on the base to support the substrate;
A focus ring unit disposed on the base to surround an outer circumference of the electrostatic chuck, comprising: a first ring and a second ring disposed below the first ring, wherein the first ring and the second ring A focus ring unit configured to be movable vertically, respectively; And
Including a focus ring driving unit comprising a lift pin and a lift pin lifting module configured to lift the lift pin,
The focus ring driving unit is configured to raise the first ring by raising the lift pin to adjust the position of the upper surface of the first ring with respect to the upper surface of the substrate, and the first ring and the second ring It is configured to raise the first ring and the second ring together by raising the lift pin to replace the,
The substrate processing apparatus, wherein only the first ring is raised or the first ring and the second ring are raised together according to the lifting height of the lift pin. The method according to claim 1,
The first and second rings are made of different materials. The method according to claim 1,
The lift pin includes a support portion selectively contacting the first ring. The method of claim 3,
A substrate processing apparatus having a fitting groove formed on a lower surface of the first ring to partially fit the support portion. The method of claim 3,
The substrate processing apparatus in which the second ring passes through the support and has a through hole having a width smaller than that of a length. The method of claim 3,
The focus ring driving unit further includes a lift pin rotation module that rotates the lift pin about an extension axis of the lift pin. The method according to claim 1,
And a receiving groove is formed in one of the first and second rings, and a protrusion to be fitted into the receiving groove is formed in the other of the first and second rings. The method according to claim 1,
The substrate processing apparatus, wherein the base is provided with a support member on which the second ring is seated and supported. The method of claim 8,
An insertion groove is formed in one of the second ring and the support member, and an insertion protrusion fitted into the insertion groove is formed in the other of the second ring and the support member.

Images