CN111863695A - Electrostatic chuck device and dry etching machine - Google Patents
Electrostatic chuck device and dry etching machine Download PDFInfo
- Publication number
- CN111863695A CN111863695A CN202010760408.4A CN202010760408A CN111863695A CN 111863695 A CN111863695 A CN 111863695A CN 202010760408 A CN202010760408 A CN 202010760408A CN 111863695 A CN111863695 A CN 111863695A
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- edge ring
- electrostatic chuck
- slope
- axis
- ramp
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention provides an electrostatic chuck device and a dry etching machine, wherein the electrostatic chuck device comprises an electrostatic chuck and an edge ring assembly, the edge ring assembly comprises a first edge ring and a second edge ring, the first edge ring is arranged on the periphery of the electrostatic chuck around the axis of the electrostatic chuck device, and the first edge ring is provided with a first slope which is circumferentially distributed around the axis of the first edge ring; the second edge ring is used for being detachably connected with the first edge ring along the axial direction and is provided with a second slope distributed circumferentially around the axis of the second edge ring; the first and second ramps are adapted to abut against each other to define a radial position of the second edge ring relative to the first edge ring. Through setting up first slope and second slope and propping against in order to assemble first edge ring and second edge ring, can avoid the base plate to scrape the second edge ring at the decline in-process in the board to the life cycle of extension board improves the yields of base plate product.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an electrostatic chuck device and a dry etching machine.
Background
Fig. 1a shows a schematic diagram of an electrostatic chucking device, which is disposed in a LAM 2300 Metal machine, and includes a first edge ring 01, a second edge ring 02, and an electrostatic chuck 03, wherein the first edge ring 01 and the second edge ring 02 are assembled by the assembling structure shown in fig. 1a, and the first edge ring 01 and the second edge ring 02 coaxially surround the electrostatic chuck 03.
Each maintenance of the LAM 2300 Metal tool requires the reassembly of the first edge ring 01 and the second edge ring 02. As shown in fig. 1b, when the first edge ring 01 and the second edge ring 02 are reassembled in the current electrostatic chuck device, the problem of assembly misalignment is easily caused, that is, the second edge ring 02 is not coaxial with the first edge ring 01, so that the wafer 04 is easily scraped to the second edge ring 02 during the descending process in the machine, and the wafer 04 is defective and is discarded.
Disclosure of Invention
The invention aims to provide an electrostatic chuck device and a dry etching machine to solve the problem that an edge ring in the electrostatic chuck device is easy to deviate in assembly.
In order to solve the above technical problem, according to one aspect of the present invention, there is provided an electrostatic chuck device comprising an electrostatic chuck and an edge ring assembly, wherein the edge ring assembly comprises a first edge ring and a second edge ring, the first edge ring is disposed on the outer periphery of the electrostatic chuck around the axis of the electrostatic chuck, and the first edge ring has first slopes circumferentially distributed around the axis of the first edge ring; the second edge ring is used for being detachably connected with the first edge ring along the axial direction and is provided with a second slope distributed circumferentially around the axis of the second edge ring; the first and second ramps are adapted to abut against each other to define a radial position of the second edge ring relative to the first edge ring.
Optionally, the first slope is inclined inward in a direction toward the second edge ring, and the second slope is inclined outward in a direction toward the first edge ring; the first slope with the axis of first edge ring becomes first contained angle, the second slope with the axis of second edge ring becomes second contained angle, first contained angle with the second contained angle equals.
Optionally, the first slope is inclined outward in a direction toward the second edge ring, and the second slope is inclined inward in a direction toward the first edge ring; the first slope with the axis of first edge ring becomes first contained angle, the second slope with the axis of second edge ring becomes second contained angle, first contained angle with the second contained angle equals.
Optionally, the range of the first included angle and the second included angle is between 30 ° and 60 °.
Optionally, the first edge ring and the second edge ring are configured to be coaxial after being assembled with each other.
Optionally, the first slope is annular, and/or the second slope is annular.
Optionally, the first slope comprises a plurality of first sub-slope segments, which are evenly distributed around the axis of the first edge ring; and/or the second slope comprises a plurality of second sub-slope segments which are evenly distributed around the axis of the second edge ring.
Optionally, the electrostatic chuck includes a base and a boss disposed on the base, the boss is used for carrying a substrate, and the base is connected to the first edge ring; the second edge ring is provided with an inner hole which is through along the axial direction, the radial inner dimension of the inner hole is larger than the radial outer dimension of the boss, and the inner hole is used for the boss to penetrate through; the radial distance between the boss and the second edge ring is a first gap.
Optionally, the range of the first gap is between 0.8 mm and 1.6 mm.
According to another aspect of the invention, the invention further provides a dry etching machine, which comprises the electrostatic chuck device.
In summary, in the electrostatic chuck device and the dry etching machine provided by the present invention, the electrostatic chuck device includes an electrostatic chuck and an edge ring assembly, the edge ring assembly includes a first edge ring and a second edge ring, the first edge ring is disposed at an outer periphery of the electrostatic chuck around an axis of the electrostatic chuck device, and the first edge ring has first slopes circumferentially distributed around the axis thereof; the second edge ring is used for being detachably connected with the first edge ring along the axial direction and is provided with a second slope distributed circumferentially around the axis of the second edge ring; the first and second ramps are adapted to abut against each other to define a radial position of the second edge ring relative to the first edge ring. Through setting up first slope and second slope counterbalance and leaning on in order to assemble first edge ring and second edge ring, make the two coaxial line after the assembly, inject the radial position of second edge ring for first edge ring, can avoid the base plate to scrape the second edge ring in the decline in-process in the board to the life cycle of extension board improves the yields of base plate product.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the invention and do not constitute any limitation to the scope of the invention. Wherein:
FIG. 1a is a schematic view of an electrostatic chucking device;
FIG. 1b is a schematic view of an electrostatic chucking device with an assembled offset edge;
FIG. 2 is a schematic view of an electrostatic chucking device according to an embodiment of the present invention;
FIG. 3 is an enlarged view of portion A of FIG. 2;
fig. 4 is a schematic view of an electrostatic chucking device according to another embodiment of the present invention.
In the drawings:
01-a first edge ring; 02-a second edge ring; 03-an electrostatic chuck; 04-wafer;
10-a first edge ring; 11-a first ramp; 20-a second edge ring; 21-a second ramp; 22-a boss; 23-an inner bore; 30-an electrostatic chuck; 31-base station; 32-boss; d 1-first gap; d 2-second gap; alpha-a first angle; beta-second angle; 40-substrate.
Detailed Description
To further clarify the objects, advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is to be noted that the drawings are in greatly simplified form and are not to scale, but are merely intended to facilitate and clarify the explanation of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
As used in this application, the singular forms "a", "an" and "the" include plural referents, the term "or" is generally employed in a sense including "and/or," the terms "a" and "an" are generally employed in a sense including "at least one," the terms "at least two" are generally employed in a sense including "two or more," and the terms "first", "second" and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first," "second," and "third" may explicitly or implicitly include one or at least two of the features unless the content clearly dictates otherwise.
The invention provides an electrostatic chuck device and a dry etching machine, which aim to solve the problem that an edge ring in the electrostatic chuck device is easy to deviate in assembly.
The following description refers to the accompanying drawings.
Referring to fig. 2 to 4, fig. 2 is a schematic view of an electrostatic chuck device according to an embodiment of the present invention, fig. 3 is an enlarged view of a portion a in fig. 2, and fig. 4 is a schematic view of an electrostatic chuck device according to another embodiment of the present invention.
As shown in fig. 2 or 4, the present embodiment provides an electrostatic chuck device, which includes an electrostatic chuck 30 and an edge ring assembly, the edge ring assembly includes a first edge ring 10 and a second edge ring 20, the first edge ring 10 is disposed on the outer periphery of the electrostatic chuck 30 around the axis of the electrostatic chuck 30, the first edge ring 10 has first slopes 11 circumferentially distributed around the axis thereof; the second edge ring 20 is intended to be removably coupled axially to the first edge ring 10, the second edge ring 20 having second ramps 21 distributed circumferentially around its axis; the first ramp 11 and the second ramp 21 are intended to abut against each other to define the radial position of the second edge ring 20 with respect to the first edge ring 10. It should be understood that the radial position refers to a displacement of the second edge ring 20 relative to the first edge ring 10 in a radial direction of the first edge ring 10. When the first edge ring 10 has an inner wall surrounding its axis and the first edge ring 10 is disposed on the outer periphery of the electrostatic chuck 30 around the axis of the electrostatic chuck 30, the inner wall surrounds the electrostatic chuck 30 and is entirely bonded to the electrostatic chuck 30; of course, the inner wall may be partially connected to the electrostatic chuck, and the radial position of the first edge ring 10 relative to the electrostatic chuck 30 (i.e., the displacement of the first edge ring 10 relative to the electrostatic chuck 30 in the radial direction of the electrostatic chuck 30) may be unchanged. It should be noted that the cross-section of the first edge ring 10 and the second edge ring 20 along the respective axes includes, but is not limited to, circular rings, and the cross-section of the electrostatic chuck 30 along the axis thereof includes, but is not limited to, circular, for example, the cross-section of the electrostatic chuck 30 is an ellipse, and then the first edge ring 10 and the second edge ring 20 can be corresponding elliptical rings; alternatively, the cross section of the electrostatic chuck 30 is circular, one of the first edge ring 10 and the second edge ring 20 has an elliptical ring shape in cross section, and the other has a circular ring shape in cross section, and the minor axis of the elliptical ring shape is matched with the inner diameter of the circular ring shape, and at this time, the radial position of the second edge ring 20 relative to the first edge ring 10 is along the minor axis direction of the elliptical ring shape, and the second edge ring 20 is displaced relative to the first edge ring 10. The shapes of the electrostatic chuck 30, the first edge ring 10, and the second edge ring 20 are not limited in the present invention, and those skilled in the art can adapt the shapes according to the actual configuration.
In the electrostatic chuck device, the first edge ring 10 and the second edge ring 20 are provided to protect the electrostatic chuck 30; secondly, the first edge ring 10 and the second edge ring 20 are assembled by abutting the first slope 11 and the second slope 12, so that the first edge ring 10 and the second edge ring 20 are coaxial after the assembly, the radial position of the second edge ring 20 relative to the first edge ring 10 is limited, and even if the first edge ring 10 and the second edge ring 20 are deviated in the radial direction during the assembly, the first edge ring 10 and the second edge ring 20 are limited by the two slopes, so that the centering is realized. With such a configuration, the substrate 40 can be prevented from being scraped to the second edge ring 20 during the descending process in the machine, thereby prolonging the service life of the machine and improving the yield of the substrate product.
In one specific embodiment, referring to fig. 2, the first slope 11 is inclined inward along a direction toward the second edge ring 20, specifically, the second edge ring 20 is away from the first edge ring 10 along its axis, the first slope 11 is disposed along a radial direction of the first edge ring 10 toward a central axis of the first edge ring 10, and specifically, in fig. 4, the substrate 40 is inclined away from the electrostatic chuck 30 along the axis of the electrostatic chuck 30 (in a direction vertically upward of the paper in fig. 4), the first slope 11 is inclined along the radial direction of the first edge ring 10 toward the electrostatic chuck 30; the second slope 21 is inclined outward in a direction toward the first edge ring 10, specifically, in a direction in which the second edge ring 20 faces the first edge ring 10 along an axis thereof, the second slope 21 is disposed away from a central axis of the second edge ring 20 in a radial direction of the second edge ring 20, specifically, in fig. 4, in a direction in which the substrate 40 approaches the electrostatic chuck 30 along the axis of the electrostatic chuck 30 (a direction vertically downward of the paper surface in fig. 4), and the second slope 21 is inclined away from the electrostatic chuck 30 in the radial direction of the second edge ring 20. The first slope 11 and the axis of the first edge ring 10 form a first included angle α, the second slope 21 and the axis of the second edge ring 20 form a second included angle β, and the first included angle α is equal to the second included angle β.
In another specific embodiment, referring to fig. 4, the first slope 11 is inclined outward along a direction toward the second edge ring 20, specifically, in a direction in which the second edge ring 20 is away from the first edge ring 10 along its axis, the first slope 11 is disposed away from a central axis of the first edge ring 10 along a radial direction of the first edge ring 10, and in fig. 4, specifically, in a direction in which the substrate 40 is away from the electrostatic chuck 30 along the axis of the electrostatic chuck 30 (a direction in which the paper surface is vertically upward in fig. 4), the first slope 11 is inclined away from the electrostatic chuck 30 along the radial direction of the first edge ring 10; the second slope 21 is inclined inward in a direction toward the first edge ring 10, specifically, the second edge ring 20 is disposed close to the central axis of the second edge ring 20 in a radial direction of the second edge ring 20 in a direction in which the axis of the second edge ring 20 is close to the first edge ring 10, specifically, in fig. 4, the substrate 40 is inclined toward the electrostatic chuck 30 in a direction in which the axis of the electrostatic chuck 30 is close to the electrostatic chuck 30 (a direction in which the plane of the drawing is vertically downward in fig. 4), and the second slope 21 is inclined toward the electrostatic chuck 30 in a radial direction of the second edge ring 20. The first slope 11 (extending direction of the first slope) forms a first included angle α with the axis of the first edge ring 10, the second slope 21 (extending direction of the second slope) forms a second included angle β with the axis of the second edge ring 20, and the first included angle α and the second included angle β are equal, that is, in a cross section along the axial direction of the electrostatic chuck 30, the extending directions of two sides formed by the first slope 11 and the second slope 21 on the same side of the cross section are the same.
It should be understood that the first included angle α is an included angle formed by the extending direction of the first slope 11 and the axis of the first edge ring 10, and the second included angle β is an included angle formed by the extending direction of the second slope 21 and the axis of the second edge ring 20; the first included angle α is equal to the second included angle β, and when the second edge ring 20 is mounted on the first edge ring 10, the electrostatic chuck device is located along the same side of the cross section (the cross section parallel to the paper in fig. 2 or fig. 4) where the central axis of the electrostatic chuck device is located, and the extending direction of the first slope 11 is parallel to the extending direction of the second slope 21.
Optionally, the first included angle α and the second included angle β range between 30 ° and 60 °. Preferably, the first included angle α and the second included angle β are both 45 °.
Further, the first edge ring 10 and the second edge ring 20 are coaxially arranged after being assembled with each other. When the first slope 11 abuts against the second slope 21, the second edge ring 20 and the first edge ring 10 are limited by the first slope 11 and the second slope 21, so that the two are automatically aligned and centered, namely, the second edge ring 20 and the first edge ring 10 are coaxial.
Optionally, in some embodiments, the first ramp 11 is annular, and/or the second ramp 21 is annular. Specifically, at least one of the two slopes has an annular cross section along the respective axis, and the whole slope is in a truncated shape (such as a circular truncated cone shape). Only one of the two slopes needs to be annular along the cross section of the axis, so that the two slopes can be abutted. Preferably, both ramps are annular.
Optionally, in other embodiments, the first ramp 11 comprises a plurality of first sub-ramp segments, which are evenly distributed around the axis of the first edge ring 10; and/or said second slope 21 comprises a plurality of second subplope segments, which are evenly distributed around the axis of said second edge ring 20. Specifically, at least one of the two slopes is in a discontinuous ring shape, that is, the ring shape is broken into a plurality of sections along the radial direction, and each section is a sub-slope section.
Further, the electrostatic chuck 30 includes a base 31 and a boss 32 disposed on the base 31, preferably, the base 31 and the boss 32 are integrally formed, optionally, a radial outer dimension of the base 31 is larger than a radial outer dimension of the boss 32, and the base 31 and the boss 32 are coaxial. The boss 32 is used for carrying a substrate 40, and the base 31 is connected with the first edge ring 10, that is, the first edge ring 10 is arranged on the periphery of the base 31 around the axis of the base 31; the second edge ring 20 is provided with an inner hole 23 which penetrates along the axial direction, the radial inner dimension of the inner hole 23 is larger than the radial outer dimension of the boss 32, and the inner hole 23 is used for the boss 32 to penetrate through; referring to fig. 3, the radial distance between the boss 32 and the second edge ring 20 is a first gap d1, which is the difference between the radially inner dimension of the second edge ring 20 and the radially outer dimension of the boss 32. Note that, the radially outer dimension of the base 31 refers to the maximum dimension in the radial direction of the electrostatic chuck 30, and is the diameter when the base 31 is circular; likewise, the radially outer dimension of the boss 32 refers to the maximum dimension in the radial direction of the electrostatic chuck 30; the radially inner dimension of the bore 32 is the maximum radial dimension between the inner edges of the bore 23, and for a circular bore 32, is its inner diameter. It is to be understood that the abutment 31, the boss 32 and the inner hole 23 may be modified from the above description when they have other shapes.
Optionally, the first gap d1 is in the range of 0.8-1.6 mm. Further, referring to fig. 2 or 4, the second edge ring 20 has a protrusion 22 around the axis of the second edge ring 20, the protrusion 22 is disposed on the inner hole 23 and protrudes in the radial direction of the second edge ring 20 and toward the central axis of the second edge ring 20, in this case, the first gap d1 is the difference between the radially inner dimension of the protrusion 22 and the radially outer dimension of the boss 32, the radially inner dimension of the protrusion 22 refers to the maximum radial dimension between the inner edges of the radial protrusions 22 along the electrostatic chuck, and the inner diameter of the inner ring of the second edge ring 20 is the circular ring shape. . In addition, when the second edge ring 20 is assembled with the first edge ring 10, the height of the boss 22 along the axis is no higher than the height of the boss 32, preferably flush, to avoid the substrate 40 from resting on the boss 22. Referring to fig. 3, when the substrate 40 is supported on the boss 32, the radial distance between the second edge ring 20 and the substrate 40 is a second gap d2, and the range of the second gap d2 is between 0.9 mm and 1.7 mm.
A wafer with a radius of 300mm is used as the substrate 40. The second edge ring 20 was set to have a radially inner dimension of 301.7mm, the boss 22 had a radially inner dimension of 295.8mm, and the boss 32 had a radially outer dimension of 294.2mm, respectively, with a first gap d1 of 1.6mm and a second gap d2 of 1.7 mm.
The embodiment also provides a dry etching machine, which comprises the electrostatic chuck device, and the dry etching machine also has the beneficial effects brought by the electrostatic chuck device because the dry etching machine comprises the electrostatic chuck device. Other components and structures of the dry etching machine can be configured by those skilled in the art according to the actual prior art, and the configuration principle and other components of the dry etching machine will not be described in detail here.
In summary, in the electrostatic chuck device and the dry etching machine provided by the present invention, the electrostatic chuck device includes an electrostatic chuck and an edge ring assembly, the edge ring assembly includes a first edge ring and a second edge ring, the first edge ring is disposed at an outer periphery of the electrostatic chuck around an axis of the electrostatic chuck device, and the first edge ring has first slopes circumferentially distributed around the axis thereof; the second edge ring is used for being detachably connected with the first edge ring along the axial direction and is provided with a second slope distributed circumferentially around the axis of the second edge ring; the first and second ramps are adapted to abut against each other to define a radial position of the second edge ring relative to the first edge ring. Through setting up first slope and second slope counterbalance and leaning on in order to assemble first edge ring and second edge ring, make the two coaxial line after the assembly, inject the radial position of second edge ring for first edge ring, can avoid the base plate to scrape the second edge ring in the decline in-process in the board to the life cycle of extension board improves the yields of base plate product.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. An electrostatic chucking device comprising an electrostatic chuck and an edge ring assembly, said edge ring assembly comprising a first edge ring and a second edge ring,
the first edge ring is arranged on the periphery of the electrostatic chuck around the axis of the electrostatic chuck, and the first edge ring is provided with first slopes distributed circumferentially around the axis of the first edge ring;
the second edge ring is used for being detachably connected with the first edge ring along the axial direction and is provided with a second slope distributed circumferentially around the axis of the second edge ring;
the first and second ramps are adapted to abut against each other to define a radial position of the second edge ring relative to the first edge ring.
2. The electrostatic chucking device of claim 1, wherein said first ramp slopes inwardly in a direction toward said second edge ring, said second ramp slopes outwardly in a direction toward said first edge ring; the first slope with the axis of first edge ring becomes first contained angle, the second slope with the axis of second edge ring becomes second contained angle, first contained angle with the second contained angle equals.
3. The electrostatic chucking device of claim 1, wherein said first ramp slopes outwardly in a direction toward said second edge ring, and said second ramp slopes inwardly in a direction toward said first edge ring; the first slope with the axis of first edge ring becomes first contained angle, the second slope with the axis of second edge ring becomes second contained angle, first contained angle with the second contained angle equals.
4. An electrostatic chucking device as claimed in claim 2 or 3, wherein said first angle and said second angle are in the range of 30 ° to 60 °.
5. The electrostatic chucking device of claim 2 or 3, wherein said first edge ring and said second edge ring are adapted to be coaxially aligned after assembly with each other.
6. The electrostatic chucking device of claim 1, wherein said first ramp is annular and/or said second ramp is annular.
7. The electrostatic chucking device of claim 1, wherein said first ramp comprises a plurality of first sub-ramp segments, said plurality of first sub-ramp segments being evenly distributed about an axis of said first edge ring; and/or the second slope comprises a plurality of second sub-slope segments which are evenly distributed around the axis of the second edge ring.
8. The electrostatic chucking device of claim 8, wherein said electrostatic chuck comprises a base and a boss disposed on said base, said boss being adapted to carry a substrate, said base being coupled to said first edge ring; the second edge ring is provided with an inner hole which is through along the axial direction, the radial inner dimension of the inner hole is larger than the radial outer dimension of the boss, and the inner hole is used for the boss to penetrate through; the radial distance between the boss and the second edge ring is a first gap.
9. The electrostatic chucking device of claim 1, wherein said first gap is in the range of 0.8-1.6 mm.
10. A dry etching machine, characterized in that the electrostatic chuck device according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010760408.4A CN111863695A (en) | 2020-07-31 | 2020-07-31 | Electrostatic chuck device and dry etching machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010760408.4A CN111863695A (en) | 2020-07-31 | 2020-07-31 | Electrostatic chuck device and dry etching machine |
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| CN111863695A true CN111863695A (en) | 2020-10-30 |
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| CN202010760408.4A Pending CN111863695A (en) | 2020-07-31 | 2020-07-31 | Electrostatic chuck device and dry etching machine |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
| CN104862660A (en) * | 2014-02-24 | 2015-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrying device, and plasma processing device |
| US20190326104A1 (en) * | 2018-04-23 | 2019-10-24 | Tokyo Electron Limited | Plasma processing method |
| KR20200043706A (en) * | 2018-10-18 | 2020-04-28 | 세메스 주식회사 | Substrate processing apparatus |
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2020
- 2020-07-31 CN CN202010760408.4A patent/CN111863695A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
| US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
| CN104862660A (en) * | 2014-02-24 | 2015-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Carrying device, and plasma processing device |
| US20190326104A1 (en) * | 2018-04-23 | 2019-10-24 | Tokyo Electron Limited | Plasma processing method |
| KR20200043706A (en) * | 2018-10-18 | 2020-04-28 | 세메스 주식회사 | Substrate processing apparatus |
| CN111081519A (en) * | 2018-10-18 | 2020-04-28 | 细美事有限公司 | Substrate processing apparatus |
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Application publication date: 20201030 |
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