JP3891627B2 - Workpiece placement table - Google Patents

Workpiece placement table Download PDF

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Publication number
JP3891627B2
JP3891627B2 JP1441697A JP1441697A JP3891627B2 JP 3891627 B2 JP3891627 B2 JP 3891627B2 JP 1441697 A JP1441697 A JP 1441697A JP 1441697 A JP1441697 A JP 1441697A JP 3891627 B2 JP3891627 B2 JP 3891627B2
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Japan
Prior art keywords
claw
conveying
workpiece
support member
presser
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Expired - Fee Related
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JP1441697A
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Japanese (ja)
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JPH10214879A (en
Inventor
尚志 堀
和久 高尾
哲史 大箭
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP1441697A priority Critical patent/JP3891627B2/en
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は半導体ウェーハにプラズマ処理を施す装置等に組み込まれる被処理物載置テーブルに関する。
【0002】
【従来の技術】
半導体ウェーハにエッチングやアッシング等の処理を施す場合には、反応チャンバー内に配置した載置テーブル上にウェーハを載置固定し、この状態で反応チャンバー内に反応ガスを導入して処理を行なうようにしている。
【0003】
載置テーブル上にウェーハを搬送系より受け渡しする治具による凹凸があるとプラズマを印加したときにその部分で電界が乱れて、エッチングが均一に行なえず、またゴミも発生しやすく好ましくない。
そこで、特開平5−175160号公報及び特開平5−217948号公報に提案される構造の被処理物載置テーブルがある。
【0004】
上記公報に開示される被処理物載置テーブルは図9に示すように、載置テーブル100にホルダ101を設け、このホルダ101の一部をテーブル100上面に対して昇降動する環状部102とし、この環状部102にウェーハWの下面周縁を支持する支持部103を設け、更にテーブル100上面にホルダ101が下降した際に前記支持部103が入り込む凹部104を形成し、ホルダの環状部102をテーブル上面より上昇させた状態で、環状部102と支持部103との間にウェーハWを挿入して受け渡し、次いでホルダを下降させてウェーハWをテーブル100上面に載置し、更に載置したウェーハWの周縁を環状部102の一部でテーブル100上面に押し付けて固定するようにしている。
【0005】
【発明が解決しようとする課題】
上述した従来の構造にあっては、ホルダ101を下降させて環状部102でウェーハWの周縁部上面を押え付けた状態で、図10に示すように、凹部104の部分が隙間になり、凹部104の周囲のプラズマが不均一になる。
また、静電吸着は近年のエッチング装置に必須の技術であるが、吸着力が十分に得られずエッチング中にウェーハの位置ズレや冷却効率の低下を招いたり、逆に処理後、残留吸着により、搬送エラーを起こす等のトラブルを生じる場合がある。
【0006】
【課題を解決するための手段】
上記課題を解決すべく本願の第1発明に係る被処理物載置テーブルは、テーブルと搬送装置との間で被処理物の授受を行なう搬送爪を備え、この搬送爪をテーブルの周囲に配置するとともに昇降動可能とし、上昇限位置を被処理物の授受位置とし、また下降限位置にてテーブル上面の周縁に形成した凹部に嵌合し、嵌合した状態で搬送爪上面とテーブル上面とは面一となるようにした。
【0007】
また、本願の第2発明に係る被処理物載置テーブルは、第1発明に係る被処理物載置テーブルに更にテーブル上に載置された被処理物の周縁部上面を押える押え爪を付加し、この押え爪をテーブルの周囲に配置するとともに前記搬送爪とは独立して昇降動可能とした。
この押え爪により静電吸着が正常に着脱できなかったときの重大な被害を回避することができる。また、搬送爪と独立して昇降可能としたことにより、テーブル上でのウェーハの受け渡しをスムーズに行える。
【0008】
ここで、前記テーブルの周縁部上面にはリング部材を嵌め込み、このリング部材に下降限における搬送爪が嵌合する凹部を形成した構造、搬送爪の上面に被処理物の周縁部が嵌り込む段部を形成した構造、搬送爪及び押え爪をそれぞれ複数本設け、これらをテーブルの周囲に位相をずらして配置した構造とすることが可能である。
【0009】
搬送爪及び押え爪をそれぞれ複数本設けた場合、搬送爪及び押え爪をそれぞれ1つの支持部材に取り付け、テーブル本体にこれら支持部材が昇降動するためのスリットを形成するようにし、また押え爪を取り付けた支持部材をシリンダユニット等の駆動源にて昇降動せしめ、搬送爪を取り付けた支持部材を押え爪を取り付けた支持部材にて押し上げるようにしてもよく、搬送爪を取り付けた支持部材をシリンダーユニット等の駆動源にて昇降動せしめ、押え爪を取り付けた支持部材を搬送爪を取り付けた支持部材にて押し下げるようにしてもよい。
【0010】
【発明の実施の形態】
以下に本発明の実施の形態を添付図面に基づいて説明する。ここで、図1は本発明に係る載置テーブルを組み込んだECR装置(電子のサイクロトロン運動を利用したプラズマエッチング装置)の概略構成図であり、この装置は石英等からなる反応チャンバー1を2.45GHzのマイクロ波発振器2につながる導波管3またはキャビティ内に収納し、導波管3の周囲には磁界発生コイル4を配置し、更に反応チャンバー1内を真空ポンプ5につなげるとともに反応チャンバー1内の下方にウェーハWの載置テーブル10を設けている。
【0011】
次に、図2乃至図8に基づいて載置テーブル10について説明する。載置テーブル10はセラミックからなる筒体11内に、上方から順に、セラミック製の支持ブロック12、セラミック製の支持プレート13、アルミニウム製の下部電極14、アルミニウム製の静電チャック板15及びセラミック製のリング部材16を積層している。
【0012】
また、載置テーブル10はテーブルと搬送装置との間で被処理物の授受を行なう搬送爪17と、テーブル上に載置されたウェーハW(被処理物)の周縁部上面を押える押え爪18とを備えている。
【0013】
搬送爪17と押え爪18はテーブルの周囲に位相をずらせて配置され、搬送爪17は柱体19の上端部に取り付けられ、柱体19の下端部は放射状に伸びる支持部材20の外端部に取り付けられ、また押え爪18は柱体21の上端部に取り付けられ、柱体21の下端部は放射状に伸びる支持部材22の外端部に取り付けられている。
【0014】
前記筒体11の内周面には前記柱体19,21が入り込む溝部23が形成され、前記支持ブロック12には支持部材20,22の上下動を可能とするスリット24が形成されている。尚、図示例にあってはスリット24は上下方向に貫通しているが、支持ブロック12をバラバラにしないために、底板25に支持ブロック12を固定するか、支持ブロック12の下端部若しくは上端部にスリットのない部分を設けるようにしてもよい。
【0015】
また、前記静電チャック板15の下面には冷却水通路26が形成され、この冷却水通路26に連通する冷却水導入孔27及び冷却水排出孔28が、底板25、支持ブロック12、支持プレート13及び下部電極14に形成され、また静電チャック板15の上面中央にはウェーハWを冷却するためのHeガス噴出孔29が形成され、このHeガス噴出孔29につながるHeガス導入孔30が底板25、支持ブロック12、支持プレート13及び下部電極14に形成されている。そして、下部電極14には底板25、支持ブロック12及び支持プレート13を貫通して高周波印加用の導線31が接続されている。
【0016】
前記支持部材22は支持部材20よりも下側に配置され、この支持部材22が駆動源としてのシリンダユニット32に取り付けられ、シリンダユニット32によって支持部材22および押え爪18を昇降動し、また支持部材22が所定位置まで上昇したら、支持部材22及び押え爪18とともに支持部材20および搬送爪17を上昇せしめるようにしている。
【0017】
また、前記リング部材16にはウェーハWの周縁部が嵌り込む段部33が形成され、同様の段部34が搬送爪17にも形成されている。更に、リング部材16には、下降限における搬送爪17が嵌合する凹部35が形成されている。この凹部35の深さは搬送爪17の厚みとほぼ等しくされ、嵌合した状態で搬送爪17上面とチャック板15上面とが面一となるようにしている。
【0018】
以上において、図7に示すように、シリンダユニット32の作動で、搬送爪17及び押え爪18を上昇させた状態で、搬送爪17と押え爪18の間の空間にウェーハWを挿入し、搬送爪17上にウェーハWを受け渡す。
【0019】
次いで、シリンダユニット32を圧縮することで、支持部材22及び押え爪18は下降され、支持部材22によって押し上げられていた支持部材20及び搬送爪17も同様に下降される。また、押え爪18が下降される時にウェーハWと搬送爪17を当接下降させることも可能である。この時、搬送爪17を凹部35に嵌合せしめる。この時点でウェーハWは静電チャック板15上に載置される。尚、これに先立って、ウェーハWはHeガス噴出孔29からのHeガスにて−60℃程度まで均一に冷却される。そして、反応ガスとして代替フロンや塩素ガスを用いてエッチングがなされる。
【0020】
尚、図示例にあっては、押え爪18を備えた被処理物載置テーブルを示したが、押え爪18に関しては省略することが可能である。
【0021】
【発明の効果】
以上に説明したように本発明によれば、テーブルと搬送装置との間で被処理物の授受を行なう搬送爪をテーブルの周囲に配置するとともに昇降動可能とし、上昇限位置を被処理物の授受位置とし、また下降限位置にてテーブル上面の周縁に形成した凹部に嵌合し、嵌合した状態で搬送爪上面とテーブル上面とは面一となるようにしたので、プラズマが均一になる。
【0022】
また、上記構成に加えて、被処理物の周縁部上面を押える押え爪を設けることで、被処理物をテーブル上面に確実に固定することができる。
【0023】
また、テーブルの周縁部上面に搬送爪が嵌合する凹部を形成したリング部材を設けることで、最もプラズマに侵食されやすい箇所を交換可能にすることができ、プラズマ処理装置としての寿命が延びる。
【0024】
また、搬送爪に被処理物周縁部が嵌り込む段部を設けることで、被処理物の位置決めが自動的になされ、且つ位置ずれが生じにくくなる。
【0025】
更に、搬送爪及び押え爪をそれぞれの支持部材に取り付け、搬送爪の上昇限位置と押え爪の上昇限位置との間にはウェーハの出し入れができる程度の空間を設けるようにし、押え爪の支持体で搬送爪の支持体を上昇させるようにすれば、シリンダ等の駆動源を1つにして、搬送爪と押え爪とを独立して昇降動せしめることができる。
【図面の簡単な説明】
【図1】本発明に係る載置テーブルを組み込んだプラズマ処理装置の概略構成図
【図2】本発明に係る載置テーブルの分解斜視図
【図3】図2のA−A方向を基準とした載置テーブルの横断面図
【図4】図2のB−B方向を基準とした載置テーブルの横断面図
【図5】図4のC−C方向を基準とした載置テーブルの縦断面図
【図6】図4のD−D方向を基準とした載置テーブルの縦断面図
【図7】図4のE−E方向を基準とした載置テーブルの縦断面図
【図8】ウェーハをテーブル上に押え付けている状態の図7と同様の図
【図9】従来の被処理物載置テーブルの断面図
【図10】従来の被処理物載置テーブルの課題を示す図
【符号の説明】
10…載置テーブル、11…筒体、12…支持ブロック、13…支持プレート、14…下部電極、15…静電チャック板、16…リング部材、17…搬送爪、18…押え爪、19,21…柱体、20,22…支持部材、24…スリット、33,34…段部、35…凹部、W…被処理物。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a workpiece mounting table incorporated in an apparatus or the like that performs plasma processing on a semiconductor wafer.
[0002]
[Prior art]
When performing processing such as etching or ashing on a semiconductor wafer, the wafer is placed and fixed on a mounting table disposed in the reaction chamber, and in this state, the reaction gas is introduced into the reaction chamber for processing. I have to.
[0003]
If there is unevenness on the mounting table due to a jig that transfers the wafer from the transfer system, the electric field is disturbed when plasma is applied, etching cannot be performed uniformly, and dust is also likely to be generated.
Therefore, there is a workpiece placing table having a structure proposed in Japanese Patent Laid-Open No. 5-175160 and Japanese Patent Laid-Open No. 5-217948.
[0004]
As shown in FIG. 9, the workpiece placement table disclosed in the above publication is provided with a holder 101 on the placement table 100, and a part of the holder 101 is an annular portion 102 that moves up and down relative to the upper surface of the table 100. The annular portion 102 is provided with a support portion 103 for supporting the peripheral edge of the lower surface of the wafer W, and a concave portion 104 into which the support portion 103 enters when the holder 101 is lowered on the upper surface of the table 100 is formed. The wafer W is inserted and transferred between the annular portion 102 and the support portion 103 while being raised from the upper surface of the table, and then the holder is lowered to place the wafer W on the upper surface of the table 100, and the further placed wafer The periphery of W is pressed against the upper surface of the table 100 by a part of the annular portion 102 and fixed.
[0005]
[Problems to be solved by the invention]
In the conventional structure described above, in the state where the holder 101 is lowered and the upper surface of the peripheral edge of the wafer W is pressed by the annular portion 102, the concave portion 104 becomes a gap as shown in FIG. The plasma around 104 becomes non-uniform.
In addition, electrostatic adsorption is an essential technology for recent etching equipment. However, sufficient adsorption force cannot be obtained, resulting in wafer misalignment and reduced cooling efficiency during etching. Troubles such as causing a transport error may occur.
[0006]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, a workpiece placing table according to the first invention of the present application includes a conveyance claw for transferring a workpiece between the table and a conveyance device, and the conveyance claw is arranged around the table. In addition, the ascending and descending movement is possible, the ascending limit position is used as the receiving / receiving position of the object to be processed, and the descending limit position is fitted into a recess formed on the peripheral edge of the table upper surface. Was to be the same.
[0007]
In addition, the workpiece placing table according to the second invention of the present application is further provided with a presser claw for pressing the upper surface of the peripheral edge of the workpiece placed on the table to the workpiece placing table according to the first invention. The presser claw is arranged around the table and can be moved up and down independently of the conveying claw.
This presser claw can avoid a serious damage when the electrostatic adsorption cannot be normally attached / detached. Further, since the lifting and lowering can be performed independently of the transfer claw, the wafer can be smoothly transferred on the table.
[0008]
Here, a ring member is fitted on the upper surface of the peripheral edge of the table, and a recess is formed in the ring member to which the conveying claw at the lower limit is fitted, and the peripheral edge of the workpiece is fitted on the upper surface of the conveying claw. It is possible to provide a structure in which a plurality of parts, a conveying claw and a pressing claw are provided, and these are arranged around the table with a phase shift.
[0009]
When there are multiple transport claws and presser claws, attach the transport claws and presser claws to a single support member, and form a slit in the table body for the support members to move up and down. The attached support member may be moved up and down by a drive source such as a cylinder unit, and the support member attached with the transport claw may be pushed up by the support member attached with the presser claw. It may be moved up and down by a drive source such as a unit, and the support member to which the presser claw is attached is pushed down by the support member to which the conveyance claw is attached.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is a schematic configuration diagram of an ECR apparatus (plasma etching apparatus using electron cyclotron motion) incorporating a mounting table according to the present invention. It is housed in a waveguide 3 or cavity connected to a 45 GHz microwave oscillator 2, a magnetic field generating coil 4 is arranged around the waveguide 3, and the reaction chamber 1 is connected to a vacuum pump 5 and the reaction chamber 1. A mounting table 10 for the wafer W is provided below the inside.
[0011]
Next, the mounting table 10 will be described with reference to FIGS. The mounting table 10 is placed in a cylindrical body 11 made of ceramic in order from the top, a ceramic support block 12, a ceramic support plate 13, an aluminum lower electrode 14, an aluminum electrostatic chuck plate 15, and a ceramic. The ring member 16 is laminated.
[0012]
In addition, the mounting table 10 includes a transfer claw 17 for transferring a workpiece between the table and a transfer device, and a presser claw 18 for pressing the upper surface of the peripheral edge of a wafer W (target workpiece) placed on the table. And.
[0013]
The conveying claw 17 and the presser claw 18 are arranged out of phase around the table, the conveying claw 17 is attached to the upper end portion of the column body 19, and the lower end portion of the column body 19 is an outer end portion of the support member 20 extending radially. The presser claw 18 is attached to the upper end portion of the column body 21, and the lower end portion of the column body 21 is attached to the outer end portion of the support member 22 that extends radially.
[0014]
A groove portion 23 into which the column bodies 19 and 21 enter is formed on the inner peripheral surface of the cylindrical body 11, and a slit 24 that allows the support members 20 and 22 to move up and down is formed in the support block 12. In the illustrated example, the slit 24 penetrates in the vertical direction. However, in order to prevent the support block 12 from falling apart, the support block 12 is fixed to the bottom plate 25, or the lower end portion or the upper end portion of the support block 12. A portion without a slit may be provided.
[0015]
A cooling water passage 26 is formed on the lower surface of the electrostatic chuck plate 15, and a cooling water introduction hole 27 and a cooling water discharge hole 28 communicating with the cooling water passage 26 are provided in the bottom plate 25, the support block 12, and the support plate. 13 and the lower electrode 14, and a He gas injection hole 29 for cooling the wafer W is formed in the center of the upper surface of the electrostatic chuck plate 15. A He gas introduction hole 30 connected to the He gas injection hole 29 is formed. The bottom plate 25, the support block 12, the support plate 13, and the lower electrode 14 are formed. A conductive wire 31 for applying a high frequency is connected to the lower electrode 14 through the bottom plate 25, the support block 12 and the support plate 13.
[0016]
The support member 22 is disposed below the support member 20, and the support member 22 is attached to a cylinder unit 32 as a drive source, and the support member 22 and the presser claw 18 are moved up and down by the cylinder unit 32 and supported. When the member 22 is raised to a predetermined position, the support member 20 and the conveyance claw 17 are raised together with the support member 22 and the presser claw 18.
[0017]
Further, the ring member 16 is formed with a stepped portion 33 into which the peripheral portion of the wafer W is fitted, and a similar stepped portion 34 is also formed on the transfer claw 17. Further, the ring member 16 is formed with a recess 35 into which the conveying claw 17 in the lowering limit is fitted. The depth of the recess 35 is substantially equal to the thickness of the conveying claw 17 so that the upper surface of the conveying claw 17 and the upper surface of the chuck plate 15 are flush with each other in the fitted state.
[0018]
7, the wafer W is inserted into the space between the transfer claw 17 and the presser claw 18 with the transfer claw 17 and the presser claw 18 raised by the operation of the cylinder unit 32. The wafer W is delivered onto the claw 17.
[0019]
Next, by compressing the cylinder unit 32, the support member 22 and the presser claw 18 are lowered, and the support member 20 and the conveyance claw 17 pushed up by the support member 22 are also lowered. Further, when the presser claw 18 is lowered, the wafer W and the transfer claw 17 can be brought into contact with each other. At this time, the conveying claw 17 is fitted into the recess 35. At this time, the wafer W is placed on the electrostatic chuck plate 15. Prior to this, the wafer W is uniformly cooled to about −60 ° C. by the He gas from the He gas ejection holes 29. Etching is performed using alternative chlorofluorocarbon or chlorine gas as the reaction gas.
[0020]
In the illustrated example, the workpiece placement table including the presser claw 18 is shown, but the presser claw 18 may be omitted.
[0021]
【The invention's effect】
As described above, according to the present invention, the conveying claw for transferring the workpiece between the table and the conveying device is arranged around the table and can be moved up and down, and the ascent limit position of the workpiece is set. At the transfer position, it is fitted into a recess formed on the periphery of the table upper surface at the lower limit position, and the upper surface of the conveying claw and the table upper surface are flush with each other in the fitted state, so that the plasma becomes uniform. .
[0022]
In addition to the above configuration, by providing a presser claw for pressing the upper surface of the peripheral edge of the workpiece, the workpiece can be reliably fixed to the table upper surface.
[0023]
Further, by providing a ring member in which a concave portion into which the conveying claw is fitted is provided on the upper surface of the peripheral edge portion of the table, it is possible to replace a place that is most easily eroded by plasma, thereby extending the life of the plasma processing apparatus.
[0024]
In addition, by providing a step portion in which the peripheral edge of the object to be processed is provided in the conveying claw, the object to be processed is automatically positioned, and the positional deviation is less likely to occur.
[0025]
Furthermore, the transfer claw and the presser claw are attached to the respective support members, and a space is provided between the transfer claw ascending limit position and the presser claw ascent limit position so that the wafer can be taken in and out. If the support of the conveyance claw is raised by the body, the conveyance claw and the press claw can be moved up and down independently by using a single drive source such as a cylinder.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of a plasma processing apparatus incorporating a mounting table according to the present invention. FIG. 2 is an exploded perspective view of the mounting table according to the present invention. 4 is a cross-sectional view of the mounting table. FIG. 4 is a cross-sectional view of the mounting table based on the direction BB in FIG. 2. FIG. 5 is a vertical section of the mounting table based on the direction CC in FIG. FIG. 6 is a longitudinal sectional view of the mounting table based on the direction DD in FIG. 4. FIG. 7 is a longitudinal sectional view of the mounting table based on the direction EE in FIG. FIG. 9 is a view similar to FIG. 7 showing a state in which the wafer is being pressed onto the table. FIG. 9 is a cross-sectional view of a conventional workpiece mounting table. Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Mounting table, 11 ... Cylindrical body, 12 ... Support block, 13 ... Support plate, 14 ... Lower electrode, 15 ... Electrostatic chuck plate, 16 ... Ring member, 17 ... Conveying claw, 18 ... Pressing claw, 19, DESCRIPTION OF SYMBOLS 21 ... Column body, 20, 22 ... Support member, 24 ... Slit, 33, 34 ... Step part, 35 ... Recessed part, W ... To-be-processed object.

Claims (3)

半導体ウェーハ等の被処理物を載置するテーブルにおいて、テーブルと搬送装置との間で被処理物の授受を行なう搬送爪と、テーブル上に載置された被処理物の周縁部上面を押える押え爪とを備え、前記搬送爪はテーブルの周囲に配置されるとともにシリンダユニット等の駆動源によって昇降動可能とされ、上昇限位置を被処理物の授受位置とし、また下降限位置にてテーブル上面の周縁に形成した凹部に嵌合し、嵌合した状態で搬送爪上面とテーブル上面とは面一となり、また前記押え爪はテーブルの周囲に配置されるとともに前記搬送爪とは独立して前記駆動源によって昇降動可能とされ、且つ前記搬送爪を取り付けた支持部材を押え爪を取り付けた支持部材にて押し上げるとともに押え爪を搬送爪よりも先に上昇せしめることを特徴とする被処理物載置テーブル。In a table for placing an object to be processed such as a semiconductor wafer, a transfer claw for transferring the object to be processed between the table and a transfer device, and a presser for pressing the upper surface of the peripheral part of the object to be processed placed on the table The claw is disposed around the table and can be moved up and down by a drive source such as a cylinder unit . The upper limit position is set as a transfer position of the workpiece, and the upper surface of the table is set at the lower limit position. fitted in a recess formed in the periphery of, fitted in the conveying claw top and table top state flush with, also the pressing pawl wherein independently of the conveying claw while being arranged around the table by a drive source configured to be moved up and down, and wherein the allowed to rise earlier than conveying nail pressing nails with and pushing up by the support member mounted to the pressing claw support member mounted said conveying claw The object to be processed placed on the table that. 請求項1に記載の被処理物載置テーブルにおいて、前記搬送爪及び押え爪はそれぞれ複数本設けられるとともにテーブルの周囲に位相をずらして配置されることを特徴とする被処理物載置テーブル。 The workpiece mounting table according to claim 1, wherein a plurality of the conveying claws and the presser claws are provided, and are arranged around the table at different phases. 請求項に記載の被処理物載置テーブルにおいて、前記複数本の搬送爪及び押え爪はそれぞれ1つの支持部材に取り付けられ、テーブル本体にはこれら支持部材が昇降動するためのスリットが形成されていることを特徴とする被処理物載置テーブル。The workpiece mounting table according to claim 2 , wherein each of the plurality of transport claws and presser claws is attached to one support member, and a slit is formed in the table body for the support members to move up and down. A workpiece placement table characterized by comprising:
JP1441697A 1997-01-29 1997-01-29 Workpiece placement table Expired - Fee Related JP3891627B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101274890B1 (en) * 2009-08-03 2013-06-17 도쿄엘렉트론가부시키가이샤 Substrate mounting mechanism and substrate processing apparatus using same

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Publication number Priority date Publication date Assignee Title
CN102501154B (en) * 2011-10-26 2014-01-29 中国科学院光电技术研究所 Workpiece clamping device and method in ion beam polishing process
CN117096073B (en) * 2023-10-16 2023-12-19 凯德芯贝(沈阳)石英有限公司 Vapor deposition quartz frame for semiconductor chip and preparation and use methods thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101274890B1 (en) * 2009-08-03 2013-06-17 도쿄엘렉트론가부시키가이샤 Substrate mounting mechanism and substrate processing apparatus using same

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