CN111066147A - 感光像素电路及制程方法 - Google Patents

感光像素电路及制程方法 Download PDF

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Publication number
CN111066147A
CN111066147A CN201880000878.1A CN201880000878A CN111066147A CN 111066147 A CN111066147 A CN 111066147A CN 201880000878 A CN201880000878 A CN 201880000878A CN 111066147 A CN111066147 A CN 111066147A
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CN
China
Prior art keywords
semiconductor substrate
optical isolation
floating diffusion
pixel circuit
manufacturing
Prior art date
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Pending
Application number
CN201880000878.1A
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English (en)
Inventor
刘毅成
杨孟达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shenzhen Goodix Technology Co Ltd filed Critical Shenzhen Goodix Technology Co Ltd
Publication of CN111066147A publication Critical patent/CN111066147A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

本申请提供了一种感光像素电路，包括半导体基材；感光元件，设置于所述半导体基材的一正面；读取电路，设置于所述正面，所述读取电路包括一传输闸以及一浮动扩散节点，所述浮动扩散节点于所述半导体基材占有一浮动扩散区域；以及光隔离部件，设置于所述半导体基材的一背面，所述光隔离部件于所述半导体基材占有一光隔离区域，所述光隔离区域的一投影结果与所述浮动扩散区域重合；其中，所述光隔离部件用来隔离来自所述背面的光线。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201880000878.1A 2018-06-06 2018-06-06 感光像素电路及制程方法 Pending CN111066147A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/090143 WO2019232722A1 (zh) 2018-06-06 2018-06-06 感光像素电路及制程方法

Publications (1)

Publication Number Publication Date
CN111066147A true CN111066147A (zh) 2020-04-24

Family

ID=68769157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880000878.1A Pending CN111066147A (zh) 2018-06-06 2018-06-06 感光像素电路及制程方法

Country Status (2)

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CN (1) CN111066147A (zh)
WO (1) WO2019232722A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546776A (zh) * 2009-05-08 2009-09-30 北京思比科微电子技术有限公司 Cmos图像传感器电路结构及其制作方法
WO2013065569A1 (ja) * 2011-11-04 2013-05-10 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
CN108122938A (zh) * 2016-11-28 2018-06-05 豪威科技股份有限公司 背侧照明图像传感器及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9659991B2 (en) * 2012-10-22 2017-05-23 Canon Kabushiki Kaisha Image capturing apparatus, manufacturing method thereof, and camera
CN105304655B (zh) * 2014-06-26 2018-06-29 原相科技股份有限公司 具连接到浮动扩散区的半导体电容的背感光式半导体结构
CN107958912B (zh) * 2016-10-17 2020-11-13 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546776A (zh) * 2009-05-08 2009-09-30 北京思比科微电子技术有限公司 Cmos图像传感器电路结构及其制作方法
WO2013065569A1 (ja) * 2011-11-04 2013-05-10 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
CN108122938A (zh) * 2016-11-28 2018-06-05 豪威科技股份有限公司 背侧照明图像传感器及其制造方法

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Publication number Publication date
WO2019232722A1 (zh) 2019-12-12

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Application publication date: 20200424

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