CN111063270A - Micro light emitting device display device - Google Patents
Micro light emitting device display device Download PDFInfo
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- CN111063270A CN111063270A CN201911391953.4A CN201911391953A CN111063270A CN 111063270 A CN111063270 A CN 111063270A CN 201911391953 A CN201911391953 A CN 201911391953A CN 111063270 A CN111063270 A CN 111063270A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
The invention provides a micro light-emitting element display device comprising a circuit substrate, a plurality of micro light-emitting elements, a first type common electrode layer and a second type common electrode layer. The micro light-emitting elements are arranged on the circuit substrate and respectively comprise an epitaxial structure and a first type electrode and a second type electrode which are respectively arranged on two opposite side surfaces of the epitaxial structure. The first type common electrode layer is arranged on the circuit substrate and directly covers the plurality of first type electrodes of the micro light-emitting elements. The second type common electrode layer is disposed between the micro light emitting devices. The first type common electrode layer is electrically connected with the second type common electrode layer.
Description
Technical Field
The present invention relates to a display device, and more particularly, to a micro light emitting device display device having micro light emitting devices as display pixels.
Background
In recent years, in the case that the manufacturing cost of an Organic light-emitting diode (OLED) Display panel is high and the service life thereof cannot compete with that of a current mainstream Display, a Micro LED Display (Micro LED Display) has attracted the investment of each technology industry. The micro light emitting diode display has optical performance equivalent to that of an organic light emitting diode display technology, such as high color saturation, high response speed and high contrast, and has the advantages of low energy consumption and long service life of materials. Generally, the display pixels of the micro led display panel are formed by at least one micro led. One side electrodes of the micro light emitting diodes are electrically connected to each other through a common electrode extending within the display area to have a common potential.
Currently, in the fabrication of common electrodes, Indium Tin Oxide (ITO) with high work function, stable property and high light transmittance, which is between 4.5eV and 5.3eV, is mostly selected as an electrode material. However, the circuits and devices on the circuit substrate cannot withstand high temperature, so that the common electrodes cannot be subjected to a high temperature annealing (annealing) process, and the light transmittance and the electrical conductivity of the common electrodes cannot be improved. If the film thickness of the common electrode is increased to meet the conductivity requirement in operation, the light transmittance is further decreased. Therefore, how to solve the above problems is one of the important issues for relevant manufacturers.
Disclosure of Invention
The invention provides a micro light-emitting element display device which is provided with a common electrode with lower resistance value and better light-emitting efficiency.
The invention relates to a micro light-emitting element display device, which comprises a circuit substrate, a plurality of micro light-emitting elements, a first type common electrode layer and a second type common electrode layer. The micro light-emitting elements are arranged on the circuit substrate and respectively comprise an epitaxial structure and a first type electrode and a second type electrode which are respectively arranged on two opposite side surfaces of the epitaxial structure. The first type common electrode layer is arranged on the circuit substrate and directly covers the plurality of first type electrodes of the micro light-emitting elements. The second type common electrode layer is overlapped on the first type common electrode layer and is positioned between the micro light-emitting elements. The first type common electrode layer is electrically connected with the second type common electrode layer.
In an embodiment of the invention, a conductivity of the second type common electrode layer of the above-mentioned micro light emitting device display apparatus is higher than a conductivity of the first type common electrode layer.
In an embodiment of the invention, a visible light transmittance of the first type common electrode layer of the micro light emitting device display apparatus is greater than a visible light transmittance of the second type common electrode layer.
In an embodiment of the invention, a thickness of the first type common electrode layer of the micro light emitting device display apparatus is smaller than a thickness of the second type common electrode layer.
In an embodiment of the invention, a material of the first type common electrode layer of the micro light emitting device display apparatus includes a metal oxide, and a material of the second type common electrode layer includes a metal or an alloy.
In an embodiment of the invention, the second-type common electrode layer of the above-mentioned micro light emitting device display apparatus has a width in the first direction. The two adjacent micro light-emitting elements have the maximum spacing and the minimum spacing in the first direction. The width of the second type common electrode layer is larger than or equal to the minimum distance and smaller than the maximum distance.
In an embodiment of the invention, a ratio of a width of the second type common electrode layer to a maximum pitch of the micro light emitting device display apparatus is greater than or equal to 0.5.
In an embodiment of the invention, a ratio of a width of the second type common electrode layer to a minimum pitch of the micro light emitting device display apparatus is greater than or equal to 0.5 and less than or equal to 2.
In an embodiment of the invention, a width of the second type common electrode layer of the above-mentioned micro light emitting device display apparatus in the first direction is greater than or equal to a width of the first type electrode in the first direction.
In an embodiment of the invention, a thickness of the second-type common electrode layer of the above-mentioned micro light emitting device display apparatus is less than or equal to a thickness of the first-type electrode.
In an embodiment of the invention, an electrical conductivity of the first type common electrode layer of the above-mentioned micro light emitting device display apparatus is smaller than an electrical conductivity of the first type electrode.
In an embodiment of the invention, a visible light transmittance of the first type common electrode layer of the micro light emitting device display apparatus is greater than a visible light transmittance of the first type electrode.
In an embodiment of the invention, the above-mentioned micro light emitting device display apparatus further includes an isolation layer disposed between the plurality of micro light emitting devices. The first common electrode layer is disposed on the isolation layer. The second type common electrode layer is located between the first type common electrode layer and the isolation layer. The second type common electrode layer is connected with the surface of the first type common electrode layer and has a first height with the circuit substrate. The first type electrode is connected between the surface of the first type common electrode layer and the circuit substrate and has a second height, and the first height is larger than the second height.
In an embodiment of the invention, the micro light emitting device display apparatus further includes a wavelength conversion layer disposed between the second type common electrode layers. The isolation layer is provided with a plurality of grooves correspondingly arranged on the micro light-emitting elements, and the wavelength conversion layer is filled in the grooves.
In an embodiment of the invention, the above-mentioned micro light emitting device display apparatus further includes an isolation layer and a gap. The isolation layer is arranged among the micro light-emitting elements. The first type common electrode layer is disposed on the isolation layer, and the second type common electrode layer is disposed between the first type common electrode layer and the isolation layer. The gap is located between the micro light-emitting elements, the isolation layer and the circuit substrate.
In an embodiment of the invention, each of the micro light emitting devices of the micro light emitting device display apparatus further includes an insulating layer. The insulation layer is arranged between the epitaxial structure and the isolation layer and covers at least part of the epitaxial structure.
In an embodiment of the invention, the micro light emitting elements of the micro light emitting element display device have a minimum width and a maximum width in the first direction, and a ratio of the minimum width to the maximum width of the micro light emitting elements is less than or equal to 0.5 and greater than or equal to 0.05.
In an embodiment of the invention, the micro light emitting elements of the micro light emitting element display device have a maximum width in the first direction. The two adjacent micro light-emitting elements have the maximum spacing in the first direction, and the maximum spacing is smaller than the maximum width of the micro light-emitting elements.
In an embodiment of the invention, the epitaxial structure of the micro light emitting device display apparatus includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, and the second type common electrode layer is overlapped with the light emitting layer in a direction parallel to the circuit substrate.
In an embodiment of the invention, the second type common electrode layer of the above-mentioned micro light emitting device display device has a plurality of grooves correspondingly disposed on the plurality of micro light emitting devices.
In an embodiment of the invention, the micro light emitting device display apparatus further includes a wavelength conversion layer. The wavelength conversion layer is arranged between the second type common electrode layers and filled in the grooves.
In view of the above, in the micro light emitting device display apparatus according to an embodiment of the invention, the common electrode electrically connected to the first type electrodes of the micro light emitting devices is a stacked structure formed by the first type common electrode layer and the second type common electrode layer. The first type common electrode layer is electrically connected with the second type common electrode layer arranged among the micro light-emitting elements, so that the overall resistance value of the common electrode can be effectively reduced, and the current conduction efficiency of the common electrode is improved.
Drawings
Fig. 1 is a schematic top view of a micro light-emitting device display device according to a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the micro-light emitting device display apparatus of FIG. 1;
FIG. 3 is a schematic cross-sectional view of a micro light-emitting device display device according to a second embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a micro light-emitting device display device according to a third embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a micro-light emitting device display apparatus according to a fourth embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fifth embodiment of the present invention;
fig. 7 is a schematic top view of a micro light-emitting device display apparatus according to a sixth embodiment of the present invention;
fig. 8 is a schematic top view of a micro light-emitting device display apparatus according to a seventh embodiment of the present invention;
fig. 9 is a schematic top view of a micro light-emitting device display apparatus according to an eighth embodiment of the present invention.
Description of the reference numerals
10. 11, 12, 13, 14, 15, 16, 17: micro light emitting device display device
100: circuit board
100s, 121s, 132 s: surface of
110: connecting pad
120. 120A, 120B: micro light-emitting device
121: first type electrode
122: second type electrode
123: first type semiconductor layer
124: luminescent layer
125: second type semiconductor layer
130. 130A, 130B, 130C, 130D, 130E, 130F: common electrode
131. 131C, 131D: first type common electrode layer
132. 132A, 132B, 132C, 132D, 132E, 132F, 132G: second type common electrode layer
132a, 132 a-1: a first straight line segment
132b, 132 b-1: second straight line segment
140. 140A, 140B: insulating layer
140Br, 132 Dr: groove
150: first drive circuit
160: second drive circuit
170: driving circuit board
180. 180A: insulating layer
190: wavelength conversion layer
C: at the point of disconnection
DR: display area
ESL: epitaxial structure
G: gap
H1: first height
H2: second height
S1: maximum distance
S2: minimum pitch
t1, t2, t 3: thickness of
WL: maximum width
WS: minimum width
W1, W2: width of
X, Y, Z: direction of rotation
A-A': cutting line
Detailed Description
In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, "electrically connected" may mean that there are other elements between the two elements.
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is a schematic top view of a micro light-emitting device display apparatus according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of the micro light emitting device display apparatus of fig. 1. Fig. 2 corresponds to the section line a-a' of fig. 1. Specifically, the connection pads 110, the isolation layer 140, and the first type common electrode layer 131 in fig. 2 are omitted from fig. 1 for clarity.
Referring to fig. 1 and 2, the micro light-emitting device display apparatus 10 includes a circuit substrate 100, a plurality of micro light-emitting devices 120, and a common electrode 130. The micro light-emitting elements 120 and the common electrode 130 are disposed on the circuit substrate 100, and the common electrode 130 covers the micro light-emitting elements 120. More specifically, the circuit substrate 100 has a plurality of connecting pads 110 located in the display region DR, and the connecting pads 110 are dispersedly disposed on the surface 100s of the circuit substrate 100. The micro light emitting devices 120 are electrically connected to the connecting pads 110 of the circuit substrate 100, respectively. That is, the micro light-emitting device 120 is electrically connected to the circuit substrate 100 through the connecting pad 110. In the present embodiment, the micro light emitting devices 120 (or the connecting pads 110) are disposed on the circuit substrate 100 in an array arrangement, but the invention is not limited thereto.
In the present embodiment, the circuit substrate 100 may be a display substrate, a light-emitting substrate, a substrate having functional elements such as thin film transistors (tfts) or Integrated Circuits (ICs), or another type of circuit substrate. That is, the circuit substrate 100 includes a substrate and a driving circuit layer disposed on the substrate, wherein the driving circuit layer includes a transistor element, a capacitor, a scan line, a data line, a power line, and the like, and the connection pad 110 is, for example, a portion of the data line or a conductive pattern connected to the data line. That is, the driving circuit layer may be an active driving circuit layer, but the invention is not limited thereto. According to other embodiments, the driving circuit layer may not include transistor elements. That is, the driving circuit layer may be a passive driving circuit layer.
In detail, the micro light emitting device 120 includes an epitaxial structure ESL, a first type electrode 121, and a second type electrode 122. The first-type electrode 121 and the second-type electrode 122 are respectively disposed on two opposite side surfaces of the epitaxial structure ESL. In this embodiment, the first-type electrode 121 may be a light-transmissive electrode, and the material of the light-transmissive electrode may include a metal oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxide, or a stacked layer of at least two of the foregoing. The second type electrode 122 may be made of aluminum, copper, platinum, nickel, titanium, gold, silver, chromium, alloys thereof, high work function metals of the above alloys, metal oxides, or non-metal conductive materials such as conductive polymer, graphite, graphene, black phosphorus, etc.
Further, the epitaxial structure ESL includes a first-type semiconductor layer 123, a light-emitting layer 124 and a second-type semiconductor layer 125. The first type semiconductor layer 123 is located between the first type electrode 121 and the light emitting layer 124, and the first type semiconductor layer 123 is electrically connected to the common electrode 130 through the first type electrode 121. The second type semiconductor layer 125 is disposed between the second type electrode 122 and the light emitting layer 124, and the second type semiconductor layer 125 is electrically connected to the connecting pad 110 through the second type electrode 122. More specifically, the second-type electrode 122, the epitaxial structure ESL, and the first-type electrode 121 of the present embodiment are sequentially stacked on the circuit substrate 100. That is, the micro light emitting device 120 of the present embodiment is a vertical micro light emitting diode (vertical type micro emitting diode).
For example, the micro light emitting device 120 has a maximum width W in the direction XLAnd a minimum width WSAnd the minimum width W of the micro-light emitting device 120SAnd a maximum width WLThe ratio of (a) to (b) is less than or equal to 0.5 and greater than or equal to 0.05, which enables the display screen of the micro light emitting device display apparatus 10 to have a finer resolution, but not limited thereto. In the present embodiment, the maximum width W of the micro-light emitting device 120LMay be between 1 micron and 100 microns, preferably between 1 micron and 30 microns. In a preferred embodiment, the micro-light emitting deviceMaximum width W of 120LLess than 10 microns. In another preferred embodiment, the maximum width W of the micro-light emitting device 120LLess than 5 microns.
In the present embodiment, the connection surface between the epitaxial structure ESL (or the first type semiconductor layer 123) and the first type electrode 121 can define the minimum width W of the micro light emitting device 120SThe connection surface between the ESL (or the second-type semiconductor layer 125) and the second-type electrode 122 can define the maximum width W of the micro light-emitting device 120L. More specifically, the width of the epitaxial structure ESL of the micro light emitting device 120 may gradually decrease from the second-type electrode 122 to the first-type electrode 121, so that the cross-sectional profile of the epitaxial structure ESL may be a regular trapezoid with a narrow top and a wide bottom, which is helpful for increasing the process margin of the common electrode 130 in the subsequent process.
On the other hand, the first type semiconductor layer 123 of the present embodiment is, for example, a P-type semiconductor layer, and the second type semiconductor layer 125 is, for example, an N-type semiconductor layer. However, the invention is not limited thereto, and according to other embodiments, the first type semiconductor layer may be an N type semiconductor layer, and the second type semiconductor layer may be a P type semiconductor layer. For example, the thickness of the first type semiconductor layer 123 may be between 0.05 microns and 0.5 microns, the thickness of the light emitting layer 124 may be between 0.1 microns and 1 micron, and the thickness of the second type semiconductor layer 125 may be between 1 micron and 5 microns. Accordingly, the overall thickness of the ESL can be controlled to be 1-6 microns, which is helpful for ensuring the yield of the subsequent process and the characteristics of the end product.
Further, the micro light emitting device display apparatus 10 may further include an isolation layer 140 disposed between the plurality of micro light emitting devices 120, and the common electrode 130 directly covers the isolation layer 140 and the first-type electrode 121 of the micro light emitting device 120. It is noted that the common electrode 130 is a stacked structure of a first type common electrode layer 131 and a second type common electrode layer 132 electrically connected to each other. The second-type common electrode layer 132 is disposed between the micro light emitting devices 120. More specifically, the second type common electrode layer 132 does not overlap the micro light emitting device 120 in a direction (e.g., the direction Z) perpendicular to the surface 100s of the circuit substrate 100, and the second type common electrode layerThe pole layer 132 is positioned between the isolation layer 140 and the first type common electrode layer 131. On the other hand, the isolation layer 140 may include a photosensitive material (e.g., photoresist), a thermal sensitive material (e.g., polymer glue), and silicon oxide (SiO)x) Alumina (Al)2O3) Aluminum nitride (AlN) or silicon nitride (SiN)x) And the like, but not limited thereto.
In the present embodiment, the second type common electrode layer 132 has a plurality of first straight line segments 132a and a plurality of second straight line segments 132b, and the first straight line segments 132a intersect with the second straight line segments 132 b. For example, the first straight line segments 132a are arranged along the direction X and extend in the direction Y, and the second straight line segments 132b are arranged along the direction Y and extend in the direction X, wherein the direction X intersects the direction Y. In other words, the second-type common electrode layer 132 of the present embodiment is distributed in a grid (mesh) manner.
In particular, in the present embodiment, the second-type common electrode layer 132 may have a higher conductivity than the first-type common electrode layer 131. For example, the material of the first type common electrode layer 131 may include a transparent metal oxide, such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), or other suitable oxide, or a stacked layer of at least two of the foregoing. The second type common electrode layer 132 may be made of silver, gold, chromium, copper, platinum, tin, nickel, titanium, aluminum or an alloy thereof. Since the second type common electrode layer 132 of the common electrode 130 is made of a metal material, the ratio of the electrical conductivity thereof to the electrical conductivity of the first type common electrode layer 131 may be in the range of 10 to 100. Accordingly, the overall resistance of the common electrode 130 can be effectively reduced, which is helpful for improving the current conduction efficiency of the common electrode 130. Specifically, the material of the second-type common electrode layer 132 may be the same as the material of the second-type electrode 122, and both of them can be completed in the same process, thereby increasing the manufacturing efficiency.
On the other hand, the thickness t1 of the first type common electrode layer 131 in the direction perpendicular to the surface 100s of the circuit substrate 100 (e.g., the direction Z) is smaller than the thickness t2 of the second type common electrode layer 132 in the direction Z. From another perspective, the thickness t1 of the first type common electrode layer 131 can be further reduced by increasing the thickness t2 of the second type common electrode layer 132 to increase the electrical conductivity thereof, which helps to improve the visible light transmittance of the first type common electrode layer 131. That is, the difference between the material selection and the film thickness of the two common electrode layers not only improves the current conduction efficiency of the common electrode 130, but also allows the visible light transmittance of the first type common electrode layer 131 to be greater than the visible light transmittance of the second type common electrode layer 132, thereby improving the light emitting efficiency of the micro light emitting device 120.
For example, in the embodiment, the second type common electrode layer 132 has a width W1 in the direction X, and two adjacent micro light emitting devices 120 arranged along the direction X have a maximum spacing S1 and a minimum spacing S2 in the direction X1, and the width W1 of the second type common electrode layer 132 may be substantially equal to the minimum spacing S2 between the two adjacent micro light emitting devices 120 and smaller than the maximum spacing S1 between the two adjacent micro light emitting devices 120, but the invention is not limited thereto. Particularly, the ratio of the width W1 of the second-type common electrode layer 132 to the maximum spacing S1 between two adjacent micro-light emitting elements 120 is greater than or equal to 0.5, which effectively increases the current conduction efficiency of the common electrode 130. On the other hand, the ratio of the width W1 of the second type common electrode layer 132 to the minimum spacing S2 between two adjacent micro light emitting elements 120 may be greater than or equal to 0.5 and less than or equal to 2. Accordingly, while improving the current conduction efficiency of the common electrode 130, the overall production yield of the micro light-emitting device display apparatus 10 can be ensured, which is helpful for achieving a high-resolution display effect.
In the present embodiment, the width W1 of the second-type common electrode layer 132 may be greater than the width W2 of the first-type electrode 121 of the micro light emitting device 120 in the direction X, such that the common electrode 130 may have a better current conduction efficiency, but the invention is not limited thereto. In other embodiments, the width W1 of the second type common electrode layer 132 may also be equal to the width W2 of the first type electrode 121 of the micro light emitting device 120. On the other hand, in the embodiment, the thickness t2 of the second type common electrode layer 132 in the direction perpendicular to the surface 100s of the circuit substrate 100 (e.g., the direction Z) is smaller than the thickness t3 of the first type electrode 121 of the micro light emitting device 120 in the direction Z, so that the process complexity of the second type common electrode layer 132 can be reduced. However, the invention is not limited thereto, and in another embodiment not shown, the thickness t2 of the second type common electrode layer 132 in the direction Z may also be substantially equal to the thickness t3 of the first type electrode 121 in the direction Z.
On the other hand, the first type common electrode layer 131 may have a conductivity less than that of the first type electrode 121. For example, in the case that the materials of the first type common electrode layer 131 and the first type electrode 121 are transparent metal oxides, the current conduction efficiency of the common electrode 130 can be increased by disposing the second type common electrode layer 132. Therefore, the thickness t1 of the first type common electrode layer 131 may be selectively smaller than the thickness t3 of the first type electrode 121, such that the visible light transmittance of the first type common electrode layer 131 is greater than the visible light transmittance of the first type electrode 121, which helps to improve the overall light-emitting efficiency of the micro light-emitting device 120.
It is noted that, in the present embodiment, the micro light emitting device display apparatus 10 further includes a gap G between the micro light emitting devices 120, the isolation layer 140 and the circuit substrate 100. For example, before the micro light emitting devices 120 are transferred to the circuit substrate 100, the isolation layer 140 may be formed between the micro light emitting devices 120 to connect the micro light emitting devices 120. That is, the material of the isolation layer 140 may have a certain adhesiveness to stabilize the connection relationship between the micro light emitting devices 120. By connecting the isolation layer 140 to the micro light-emitting devices 120, the transfer yield of the micro light-emitting devices 120 can be increased. The isolation layer 140 may be a light blocking material, such as a black photoresist, or a scattering material, which can prevent the side lights of the micro light emitting devices 120 from interfering with each other and/or increase the forward light output.
On the other hand, in the process of transferring the micro light-emitting devices 120 to the circuit substrate 100 and electrically connecting the micro light-emitting devices to the connection pads 110, the connection pads 110 may be heated to be in a molten state. At this time, since the distance between the micro light emitting devices 120 is small, the gap G formed between the micro light emitting devices 120, the isolation layer 140 and the circuit substrate 100 can be used as a buffer space when the connection pad 110 overflows, thereby preventing the micro light emitting devices 120 (or the connection pad 110) from short-circuiting, and also contributing to increase the flatness of the connection of the micro light emitting devices 120 to the circuit substrate 100, so as to improve the yield of the first type common electrode layer 131 in the subsequent process. Particularly, the second type common electrode layer 132 of the common electrode 130 may be formed on the isolation layer 140 before the micro light emitting devices 120 are transferred to the circuit substrate 100, but the invention is not limited thereto.
Further, the micro light emitting device display apparatus 10 may further include a first driving circuit 150 and a second driving circuit 160 respectively disposed at two adjacent sides of the circuit substrate 100. For example, the transistor elements for controlling the display pixels (i.e., the micro light emitting elements 120) are electrically connected to the first driving circuit 150 (e.g., a gate driving circuit) and the second driving circuit 160 (e.g., a source driving circuit) through a scan line (scan line) and a data line (data line), respectively. On the other hand, the micro light emitting device display apparatus 10 may further include a driving circuit board 170, and the driving circuit board 170 may be electrically connected to one side of the circuit substrate 100 to electrically connect the first driving circuit 150 and the second driving circuit 160. For example, the driving circuit board 170 may be electrically connected to the circuit substrate 100 through a Flexible Printed Circuit Board (FPCB), which is not shown, but the invention is not limited thereto.
It should be noted that, in the present embodiment, the number of the driving circuits is exemplarily illustrated by two, which does not mean that the present invention is limited by the disclosure of the drawings. In other embodiments, the micro light emitting device display apparatus may further include a power control circuit, or other circuits (e.g., feedback circuit, compensation circuit, etc.) adapted to drive the display pixels. It should be understood that the micro light emitting device display device may further include a signal line electrically connected to the driving circuit.
Fig. 3 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a second embodiment of the present invention. Referring to fig. 3, the main differences between the micro light-emitting device display apparatus 11 of the present embodiment and the micro light-emitting device display apparatus 10 of fig. 2 are: the micro light emitting devices have different compositions and the second type common electrode layer has different sizes and configurations. Specifically, the micro light emitting device 120A of the micro light emitting device display apparatus 11 may further include an insulating layer 180 disposed between the isolation layer 140 and the epitaxial structure ESL. In the embodiment, the insulating layer 180 may directly cover the sidewalls of the second-type semiconductor layer 125, the light emitting layer 124 and a portion of the first-type semiconductor layer 123 of the epitaxial structure ESL, but the invention is not limited thereto. Accordingly, leakage current can be prevented from being generated at the connection surface between the epitaxial structure ESL and the isolation layer 140. More specifically, the second type common electrode layer 132A of the common electrode 130A is electrically insulated from the light emitting layer 124 and the second type semiconductor layer 125.
In the present embodiment, the material of the insulating layer 180 may include, but is not limited to, an insulating material of aluminum oxide, aluminum nitride, silicon oxide, or silicon nitride. On the other hand, in the present embodiment, the second type common electrode layer 132A of the common electrode 130A may overlap the light-emitting layer 124 in a direction (e.g., the direction X) parallel to the circuit substrate 100, and a width W1 of the second type common electrode layer 132A in the direction X is greater than a minimum spacing S2 between two adjacent micro light-emitting elements 120A in the direction X. In other words, the second type common electrode layer 132A of the embodiment is closer to the light emitting layer 124 of the epitaxial structure ESL than the second type common electrode layer 132 of the embodiment of fig. 2, so that the side light emitted from the light emitting layer 124 can be reflected to the angle range of the forward light emitted through the sidewall of the second type common electrode layer 132, which is helpful to increase the forward light emitting amount of the micro light emitting device 120A.
Fig. 4 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a third embodiment of the present invention. Referring to fig. 4, the difference between the micro light-emitting device display apparatus 12 of the present embodiment and the micro light-emitting device display apparatus 10 of fig. 2 is: the second type common electrode layer has different configuration. Specifically, in the present embodiment, the surface 132s of the common electrode 130B connected to the first type common electrode layer 131 and the circuit substrate 100 have a first height H1, the surface 121s of the first type electrode 121 connected to the first type common electrode layer 131 and the circuit substrate 100 have a second height H2, and the isolation layer 140A may protrude from between the first type electrodes 121 of the micro light emitting elements 120. The first height H1 of the second type common electrode layer 132B is greater than the second height H2 of the first type electrode 121, so that the large-angle light emitted from the micro light-emitting elements 120 can be blocked, and the overlapping of the light emitting ranges of the adjacent micro light-emitting elements 120 can be avoided, which is helpful for realizing the high-resolution display effect. The isolation layer 140A may be a light blocking material or a light scattering material, which is more helpful to increase the forward light output of the micro light emitting device display apparatus.
On the other hand, in the embodiment, the width W1 of the second type common electrode layer 132B in the direction X may be smaller than the minimum distance S2 between two adjacent micro light emitting elements 120, but the invention is not limited thereto. In other embodiments, the relationship between the width W1 of the second type common electrode layer 132B and the minimum spacing S2 can be adjusted according to the first height H1 of the second type common electrode layer 132B or the actual product specification (e.g., the resolution of the display pixel), which is not limited by the invention.
Fig. 5 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fourth embodiment of the present invention. Referring to fig. 5, the main differences between the micro light-emitting device display apparatus 13 of the present embodiment and the micro light-emitting device display apparatus 10 of fig. 2 are: the configuration of the spacer layer, the composition of the micro light emitting elements, and the composition of the display device are different. In the present embodiment, the isolation layer 140B has a plurality of grooves 140Br, and the grooves 140Br are correspondingly disposed on the plurality of micro light emitting elements 120B. More specifically, the grooves 140Br overlap the micro light-emitting elements 120B in the direction Z, and the first type common electrode layer 131C of the common electrode 130C extends into the grooves 140Br to electrically connect the first type electrodes 121 of the micro light-emitting elements 120B. The micro light emitting device display apparatus 13 further includes a wavelength conversion layer 190 filled in the plurality of grooves 140Br, and the first type common electrode layer 131C is located between the isolation layer 140B and the wavelength conversion layer 190.
For example, the micro light emitting device 120B of the present embodiment is used to emit an excitation light (e.g., blue light or ultraviolet light) of a single wavelength band, and the excitation light irradiates the wavelength conversion layer 190 to excite red light, green light, or other visible light. However, the invention is not limited thereto, and according to other embodiments, a color filter layer may be disposed in the grooves 140Br of the isolation layer 140B to filter the visible light emitted by the micro light-emitting devices 120B into a desired color.
In the present embodiment, the maximum spacing S1 between two adjacent micro light-emitting elements 120B in the direction X may be smaller than the maximum width W of the micro light-emitting elements 120B in the direction XL. In other words, the micro light emitting device display apparatus 13 of the present embodiment may be a micro light emitting diode display panel with a higher pixel resolution. On the other hand, the micro light emitting device 120B may further include an insulating layer 180A disposed between the isolation layer 140B and the epitaxial structure ESL. The insulating layer 180A may directly cover the epitaxial structure ESL and a portion of the sidewall of the first-type electrode 121, but not limited thereto. Accordingly, leakage current can be prevented from being generated at the connection surface between the epitaxial structure ESL and the isolation layer 140B. More specifically, any two adjacent micro-light emitting devices 120B can be electrically insulated from each other.
Fig. 6 is a schematic cross-sectional view of a micro light-emitting device display apparatus according to a fifth embodiment of the present invention. Referring to fig. 6, the main differences between the micro light-emitting device display apparatus 14 of the present embodiment and the micro light-emitting device display apparatus 13 of fig. 5 are: the second type common electrode layer has a different configuration. In the present embodiment, the second type common electrode layer 132D has a plurality of grooves 132Dr, and the grooves 132Dr are correspondingly disposed on the micro light emitting elements 120B. More specifically, the grooves 132Dr overlap the micro light-emitting elements 120B in the direction Z, and the first type common electrode layer 131D of the common electrode 130D extends into the grooves 132Dr to electrically connect the first type electrodes 121 of the micro light-emitting elements 120B. The wavelength conversion layer 190 of the micro light emitting device display apparatus 14 is filled in the grooves 132Dr, and the first type common electrode layer 131D is located between the second type common electrode layer 132D and the wavelength conversion layer 190. The second type common electrode layer 132D may be made of a material with reflective and conductive properties, such as silver, gold, chromium, copper, platinum, tin, nickel, titanium, aluminum, or an alloy thereof. The light can be concentrated by the design of forming a plurality of grooves 132Dr on the second type common electrode layer 132D.
For example, the micro light emitting device 120B of the present embodiment is used to emit an excitation light (e.g., blue light or ultraviolet light) of a single wavelength band, and the excitation light irradiates the wavelength conversion layer 190 to excite red light, green light, or other visible light. However, the invention is not limited thereto, and according to other embodiments, a color filter layer may be disposed in the grooves 132Dr of the second type common electrode layer 132D to filter the visible light emitted by the micro light emitting devices 120B into the desired color. In addition, the material of the second type common electrode layer 132D may be a material having reflective and conductive properties. Therefore, the light emitted from two adjacent micro light-emitting elements 120B can be prevented from interfering with each other, and the common electrode 130D can have good conductive efficiency. Specifically, the material of the second type common electrode layer 132D may be the same as the material of the second type electrode 122, and both of them may be completed in the same process without using an additional light shielding layer in the subsequent process, thereby increasing the process efficiency.
Fig. 7 is a schematic top view of a micro light-emitting device display apparatus according to a sixth embodiment of the present invention. Fig. 8 is a schematic top view of a micro light-emitting device display apparatus according to a seventh embodiment of the present invention. Fig. 9 is a schematic top view of a micro light-emitting device display apparatus according to an eighth embodiment of the present invention. Referring to fig. 7, 8 and 9, the micro-light-emitting device display device 15, the micro-light-emitting device display device 16 and the micro-light-emitting device display device 17 are similar to the micro-light-emitting device display device 10 of fig. 1, and the main differences are: the second type common electrode layer has different configuration.
Specifically, the second type common electrode layer 132E of the common electrode 130E of the micro light emitting device display apparatus 15 may be composed of a plurality of grid-shaped conductive patterns structurally separated from each other (as shown in fig. 6), but the invention is not limited thereto. In another embodiment, the first straight line segment 132a-1 (or the second straight line segment 132b-1) of the second type common electrode layer 132F of the common electrode 130F of the micro light emitting device display device 16 may also be composed of a plurality of strip-shaped conductive patterns structurally separated from each other, as shown in FIG. 8. More specifically, the second type common electrode layer 132F has a plurality of breaks C, and the breaks C are located between the four micro light emitting elements 120 adjacent to each other (or, as shown in fig. 1, the intersections of the first straight line segments 132a and the second straight line segments 132 b).
Referring to fig. 9, the second type common electrode layer 132G of the common electrode 130G of the micro light-emitting device display apparatus 17 of the present embodiment may be formed by a plurality of strip-shaped conductive patterns structurally separated from each other, and the strip-shaped conductive patterns are located between four micro light-emitting devices 120 adjacent to each other. More specifically, the elongated conductive patterns and the micro light emitting elements 120 are alternately arranged in the direction X and the direction Y. By the offset relationship between the elongated conductive pattern and the micro light emitting device 120 in these two directions, the process margin of the second type common electrode layer 132G can be increased, for example, the tolerance of the offset of the second type common electrode layer 132G in the directions X and Y can be increased at the same time, which is helpful to improve the overall yield of the micro light emitting device display apparatus 17.
In summary, in the micro light emitting device display apparatus according to an embodiment of the invention, the common electrode electrically connected to the first type electrodes of the micro light emitting devices is a stacked structure formed by the first type common electrode layer and the second type common electrode layer. The first type common electrode layer is electrically connected with the second type common electrode layer arranged among the micro light-emitting elements, so that the overall resistance value of the common electrode can be effectively reduced, and the current conduction efficiency of the common electrode is improved.
Claims (21)
1. A micro light-emitting element display device comprising:
a circuit substrate;
a plurality of micro light emitting elements disposed on the circuit substrate, each of the micro light emitting elements including:
epitaxial structure and
the first type electrode and the second type electrode are respectively arranged on the surfaces of two opposite sides of the epitaxial structure;
a first type common electrode layer disposed on the circuit substrate and directly covering the plurality of first type electrodes of the plurality of micro light emitting elements; and
and a second type common electrode layer disposed between the plurality of micro light emitting devices, wherein the first type common electrode layer is electrically connected to the second type common electrode layer.
2. The micro light-emitting element display device according to claim 1, wherein the second type common electrode layer has a higher conductivity than the first type common electrode layer.
3. The micro light emitting device display apparatus of claim 1, wherein the visible light transmittance of the first type common electrode layer is greater than the visible light transmittance of the second type common electrode layer.
4. The micro light emitting device display apparatus of claim 1, wherein the thickness of the first type common electrode layer is smaller than the thickness of the second type common electrode layer.
5. The micro light emitting device display apparatus of claim 1, wherein the first type common electrode layer comprises a metal oxide, and the second type common electrode layer comprises a metal or an alloy.
6. The micro light emitting device display apparatus of claim 1, wherein the second type common electrode layer has a width in a first direction, a maximum pitch and a minimum pitch between two adjacent micro light emitting devices in the first direction, and the width of the second type common electrode layer is greater than or equal to the minimum pitch and smaller than the maximum pitch.
7. The micro light-emitting device display apparatus according to claim 6, wherein a ratio of the width of the second type common electrode layer to the maximum pitch is 0.5 or more.
8. The micro light-emitting device display apparatus according to claim 6, wherein a ratio of the width of the second type common electrode layer to the minimum pitch is 0.5 or more and 2 or less.
9. The micro light emitting device display apparatus of claim 1, wherein a width of the second type common electrode layer in a first direction is equal to or greater than a width of the first type electrode in the first direction.
10. The micro light-emitting device display apparatus according to claim 1, wherein a thickness of the second type common electrode layer is equal to or less than a thickness of the first type electrode.
11. The micro light-emitting element display device according to claim 1, wherein an electric conductivity of the first type common electrode layer is smaller than an electric conductivity of the first type electrode.
12. The micro light-emitting device display apparatus according to claim 11, wherein the visible light transmittance of the first type common electrode layer is larger than that of the first type electrode.
13. The micro light-emitting element display device according to claim 1, further comprising:
an isolation layer disposed between the micro light emitting elements, the first type common electrode layer disposed on the isolation layer, the second type common electrode layer located between the first type common electrode layer and the isolation layer, wherein the second type common electrode layer is connected to the surface of the first type common electrode layer and a first height is provided between the circuit substrates, the first type electrode is connected to the surface of the first type common electrode layer and a second height is provided between the circuit substrates, and the first height is greater than the second height.
14. The micro light-emitting element display device according to claim 13, further comprising:
and the wavelength conversion layer is arranged between the second type common electrode layers, wherein the isolation layer is provided with a plurality of grooves correspondingly arranged on the plurality of micro light-emitting elements, and the wavelength conversion layer is filled in the grooves.
15. The micro light-emitting element display device according to claim 1, further comprising:
an isolation layer disposed between the plurality of micro light emitting devices, wherein the first type common electrode layer is disposed on the isolation layer, and the second type common electrode layer is disposed between the first type common electrode layer and the isolation layer; and
a gap between the plurality of micro light emitting elements, the isolation layer, and the circuit substrate.
16. The micro-light emitting element display device of claim 15, wherein each of the micro-light emitting elements further comprises:
the insulating layer is arranged between the epitaxial structure and the isolation layer and covers at least part of the epitaxial structure.
17. The micro light-emitting element display device according to claim 1, wherein the micro light-emitting elements have a minimum width and a maximum width in a first direction, and a ratio of the minimum width to the maximum width of the micro light-emitting elements is 0.5 or less and 0.05 or more.
18. The micro light-emitting element display device of claim 1, wherein the micro light-emitting elements have a maximum width in a first direction, a maximum pitch between two adjacent micro light-emitting elements in the first direction is smaller than the maximum width of the micro light-emitting elements.
19. The device of claim 1, wherein the epitaxial structure comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting layer is located between the first type semiconductor layer and the second type semiconductor layer, and the second type common electrode layer overlaps the light emitting layer in a direction parallel to the circuit substrate.
20. The micro light emitting device display apparatus of claim 1, wherein the second type common electrode layer has a plurality of grooves correspondingly disposed on the plurality of micro light emitting devices.
21. The micro light-emitting element display device according to claim 20, further comprising: and the wavelength conversion layer is arranged between the second type common electrode layers and is filled in the grooves.
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