CN109244100A - Display device - Google Patents
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- CN109244100A CN109244100A CN201710555460.4A CN201710555460A CN109244100A CN 109244100 A CN109244100 A CN 109244100A CN 201710555460 A CN201710555460 A CN 201710555460A CN 109244100 A CN109244100 A CN 109244100A
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- light
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of display device, including drive substrate, a plurality of light-emitting elements and multiple metal common electrodes.Light-emitting component is dispersedly configured in drive substrate, and each light-emitting component includes epitaxial structure layer and the first type electrode being configured on epitaxial structure layer and second type electrode.Metal common electrode is dispersedly configured in drive substrate, and contacts the part second type electrode of each light-emitting component to form Ohmic contact.
Description
Technical field
The present invention relates to a kind of display devices more particularly to a kind of display with light emitting diode as display pixel to fill
It sets.
Background technique
In general display panel, common electrode and light emitting diode can be all configured in display area, wherein light-emitting diodes
Pipe is located at each pixel region and is electrically connected to common electrode, to show by the voltage difference between common electrode and light emitting diode
Show that the state of dielectric layer changes and shown.At present in the production of light emitting diode, big city selects 4.5eV-5.3eV's
High work function and property stablize the tin indium oxide (Indium Tin Oxide, ITO) of light transmission again as electrode material.Current
Common electrode also uses identical material, i.e. tin indium oxide (ITO) makes, however tin indium oxide (ITO) material less extends
Property and toughness, easily increase display panel common electrode processing procedure difficulty thus lower display panel yield.
Summary of the invention
The present invention provides a kind of display device, has preferably production yield.
Display device of the invention comprising drive substrate, a plurality of light-emitting elements and multiple metal common electrodes.Shine member
Part is dispersedly configured in drive substrate, and each light-emitting component includes epitaxial structure layer and is configured on epitaxial structure layer
First type electrode and second type electrode.Metal common electrode is dispersedly configured in drive substrate, and contacts each light-emitting component
Part second type electrode is to form Ohmic contact.
In one embodiment of this invention, above-mentioned metal common electrode contacts the contact of the upper surface of each second type electrode
The ratio of the area of the upper surface of area and each second type electrode is less than or equal to 0.5.
In one embodiment of this invention, above-mentioned metal common electrode includes multiple first type metal common electrodes and multiple the
Two type metal common electrodes, wherein the first type metal common electrode is different with the material of second type metal common electrode.
In one embodiment of this invention, the material of the first above-mentioned type metal common electrode includes gold, germanium, nickel or above-mentioned material
The alloy of matter, and the material of second type metal common electrode includes the alloy of titanium, aluminium or above-mentioned material.
In one embodiment of this invention, each light-emitting component of the corresponding contact of the first above-mentioned type metal common electrode is tool
There is the first main emission wavelength, and each light-emitting component of the corresponding contact of second type metal common electrode is main luminous with second
Wavelength, the first main emission wavelength are greater than the second main emission wavelength.
In one embodiment of this invention, each light-emitting component of the corresponding contact of the first above-mentioned type metal common electrode is red
Light light-emitting component, and each light-emitting component of the corresponding contact of second type metal common electrode is blue light emitting element or green luminescence member
Part.
In one embodiment of this invention, above-mentioned display device further includes multiple joint sheets, is configured in drive substrate,
And it is located between the first type electrode and drive substrate of each light-emitting component.
In one embodiment of this invention, above-mentioned display device further includes insulating layer, is configured in drive substrate, and is covered
The epitaxial structure layer and the first type electrode of lid joint sheet and each light-emitting component.Metal common electrode covers on the insulating layer.Insulation
The thickness of layer is less than the thickness of each light-emitting component.
In one embodiment of this invention, above-mentioned epitaxial structure layer includes the first type semiconductor layer, luminescent layer and the
Two type semiconductor layers.Luminescent layer is between the first type semiconductor layer and the second type semiconductor layer, and the first type electrode and first
Type semiconductor layer is electrically connected, and second type electrode and the second type semiconductor layer are electrically connected.
In one embodiment of this invention, above-mentioned metal common electrode covers the side of each luminescent layer.
In one embodiment of this invention, above-mentioned each metal common electrode has the first vertical height on vertical section
Degree, and each metal common electrode and drive substrate have the second vertical height, and the first vertical height and the on vertical section
The ratio of two vertical heights is between 0.3 to 1.
In one embodiment of this invention, above-mentioned metal common electrode covers the side of each light-emitting component.
In one embodiment of this invention, above-mentioned each metal common electrode includes the first metal common electrode and the second metal
Common electrode.First metal common electrode and the second metal common electrode are covered each by the two sides of each light-emitting component.
In one embodiment of this invention, above-mentioned metal common electrode covers the surrounding of each light-emitting component.
In one embodiment of this invention, above-mentioned display device further includes transparency conducting layer, is configured at metal common electrode
On, and at least cover metal common electrode and light-emitting component.
Based on above-mentioned, in display device of the invention, contacted through ductility and the preferable metal common electrode of toughness every
The part second type electrode of one light-emitting component, and high work function interface can provide by metal common electrode and increase Ohmic contact
Efficiency, because of metal common electrode covering part second type electrode, therefore light-emitting component can still possess light emission rate.In short, this hair
Bright display device can have good element characteristic and preferably production yield.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to cooperate attached drawing to make
Carefully it is described as follows.
Detailed description of the invention
Figure 1A is shown as a kind of local overlooking schematic diagram of display device of one embodiment of the invention.
Figure 1B is shown as the partial cutaway schematic of the display device of Figure 1A.
Fig. 1 C is shown as a kind of local overlooking schematic diagram of display device of another embodiment of the present invention.
Fig. 2A is shown as a kind of local overlooking schematic diagram of display device of another embodiment of the present invention.
Fig. 2 B is shown as the partial cutaway schematic of the display device of Fig. 2A.
Fig. 3 is shown as a kind of local overlooking schematic diagram of display device of another embodiment of the present invention.
Fig. 4 is shown as a kind of partial cutaway schematic of display device of another embodiment of the present invention.
Description of symbols
100a, 100a1,100b, 100c, 100d: display device
110: drive substrate
120,120a1,120a2: light-emitting component
122: epitaxial structure layer
122a: the first type semiconductor layer
122b: luminescent layer
122c: the second type semiconductor layer
124: the first type electrodes
126: second type electrode
126a, 126c: side
126b: upper surface
130a, 130b, 130c: metal common electrode
130a1: the first type metal common electrode
130a2: the first type metal common electrode
130b1: the first metal common electrode
130b2: the second metal common electrode
140: joint sheet
150: insulating layer
160: transparency conducting layer
S: surrounding
S1, S2: side
H1: the first vertical height
H2: the second vertical height
Specific embodiment
Figure 1A is shown as a kind of local overlooking schematic diagram of display device of one embodiment of the invention.Figure 1B is shown as figure
The partial cutaway schematic of the display device of 1A.It please also refer to Figure 1A and Figure 1B, in this example it is shown that device 100a packet
Include drive substrate 110, a plurality of light-emitting elements 120 and multiple metal common electrode 130a.Light-emitting component 120 is dispersedly configured at drive
On dynamic substrate 110, and each light-emitting component 120 include epitaxial structure layer 122 and be configured on epitaxial structure layer 122 first
Type electrode 124 and second type electrode 126.Metal common electrode 130a is dispersedly configured in drive substrate 110, and contacts each hair
The part second type electrode 126 of optical element 120 is to form Ohmic contact.
Specifically, the drive substrate 110 of the present embodiment is, for example, complementary metal-oxide (Complementary
Metal-Oxide-Semiconductor, CMOS) semiconductor substrate, liquid crystal on silicon (Liquid Crystal on Silicon,
LCOS) substrate, thin film transistor (TFT) (Thin Film Transistor, TFT) substrate or the substrate with operating circuit, in this
And it is without restriction.The mode arranged in arrays of light-emitting component 120 is dispersedly configured in drive substrate 110, wherein the member that shines
Part 120 and drive substrate 110 are electrically connected and shine through the driving of drive substrate 110.The epitaxial structure of light-emitting component 120
122 materialization of layer includes the first type semiconductor layer 122a, luminescent layer 122b and the second type semiconductor layer 122c, wherein luminescent layer
122b is between the first type semiconductor layer 122a and the second type semiconductor layer 122c.First type electrode 124 and second type electrode
126 are located at the opposite sides of epitaxial structure layer 122, wherein the first type electrode 124 and the first type semiconductor layer 122a are electrical
Connection, and second type electrode 126 and the second type semiconductor layer 122c are electrically connected.
As shown in Figure 1B, the light-emitting component 120 of the present embodiment is embodied as rectilinear micro-led (micro
LED), maximum width is about between 1 to 100 micron, preferably between 3 to 50 microns.Herein, epitaxial structure layer 122
Section shape trapezoid is presented, and integral thickness is about between 1 to 6 micron.Herein, the first type semiconductor layer 122a is for example
For n type semiconductor layer, the second type semiconductor layer 122c is, for example, p type semiconductor layer, but is not limited thereto.And the first type is partly led
The thickness of body layer 122a is greater than the thickness of the second type semiconductor layer 122c, and the first type electrode 124 is, for example, N-type electrode, and second
Type electrode 126 is, for example, P-type electrode, but is not limited thereto.The material of second type electrode 126 includes transparent conductive material or half
Transparent conductive material, such as high work function with 4.5eV-5.3eV and property stablize tin indium oxide (the Indium Tin of light transmission again
Oxide, ITO) so that light caused by luminescent layer 122b can via second type electrode 126 and out light.It illustrates,
Display device 100a has multiple pixel unit (not shown), wherein each pixel unit (not shown) not may include at least three not
The light-emitting component 120 of co-wavelength, but be not limited thereto.
Furthermore the metal common electrode 130a of the present embodiment contact the part second type electrode 126 of each light-emitting component 120 and
Ohmic contact is formed, wherein the material of metal common electrode 130a is metal and is different from second type electrode 126, therefore relative to existing
Have using tin indium oxide (ITO) as the material of common electrode for, the present embodiment can effectively increase the effect of Ohmic contact.Preferably
Ground, metal common electrode 130a contact the upper surface 126b of each second type electrode 126 contact area and each second type electrode
The ratio of the area of 126 upper surface 126b is less than or equal to 0.5.If the ratio of area is more than 0.5, it is likely to result in out light
Masking can avoid preferably, the ratio of area is less than or equal to 0.25 and more than or equal to 0.05 because the area of contact is not enough led
It causes conductive resistance value too big and influences Ohmic contact efficiency, light extraction efficiency can also be possessed.Herein, each second type electrode 126
The area of upper surface 126b is, for example, 25 microns or 7 microns 20 microns of X of 8 microns of X, and metal common electrode 130a contact is each
The contact area of the upper surface 126b of second type electrode 126, for example, 2 microns 25 microns or 1 micron 20 microns of X of X, herein simultaneously
It does not limit.
As shown in Figure 1A and Figure 1B, metal common electrode 130a embodies the side S1 for covering each light-emitting component 120, and gold
Belong to side 126a and portion of upper surface 126b that common electrode 130a contacts second type electrode 126 simultaneously, metal common electrode can be increased
130a contacts the area of second type electrode 126, to increase electric current conduction efficiency.Since metal common electrode 130a exposes the member that shines
The portion of upper surface 126b of the second type electrode 126 of part 120, therefore light-emitting component 120 still possesses light emission rate.Metal common electrode
The material of 130a is, for example, the combination of gold, germanium, nickel, aluminium, titanium, the alloy of above-mentioned material or above-mentioned material, can be according to light-emitting component
120 go out light color and it is identical, completely mutually exclusive or it is not exactly the same, it is not limited herein.
In another embodiment, Fig. 1 C is please referred to, it can not shown here as the material of the metal common electrode 130a of device 100a1
It is identical.These metal common electrodes 130a may include the first type metal common electrode 130a1 and second type metal common electrode 130a2,
The material of first type metal common electrode 130a1 may include the alloy of gold, germanium, nickel or above-mentioned material, and the luminous member of corresponding contact
Part 120a1 can be for the first main emission wavelength.And the material of second type metal common electrode 130a2 may include titanium, aluminium or on
The alloy of material is stated, and the light-emitting component 120a2 of corresponding contact can be with the second main emission wavelength, wherein the first main hair
Optical wavelength is greater than the second main emission wavelength.More specifically, the first main emission wavelength be, for example, be more than or equal to 610 nanometers and
Less than 700 nanometers namely the light-emitting component 120a1 of the corresponding contact of the first type metal common electrode 130a1 is red light-emitting element, the
Two main emission wavelengths are, for example, to be more than or equal to 430 nanometers and be less than or equal to 570 nanometers namely second type metal common electrode
The light-emitting component 120a2 of the corresponding contact of 130a2 is blue light emitting element or green luminescence element, therefore, compared to existing difference
The light-emitting component of emission wavelength and be all connected to the common electrode of same material and lead to the problem of electric current it is unstable for, this hair
Bright display device can have more preferably display effect.
In addition, the display device 100a of the present embodiment may include multiple joint sheets 140, wherein joint sheet 140 is dispersedly matched
It is placed in drive substrate 110, and is located between the first type electrode 124 and drive substrate 110 of each light-emitting component 120, make every
One light-emitting component 120 is electrically connected with drive substrate 110, and can absorb answering when light-emitting component 120 is engaged with drive substrate 110
Power.In addition, the display device 100a of the present embodiment further includes insulating layer 150, it is configured in drive substrate 110, and covers engagement
The epitaxial structure layer 122 and the first type electrode 124 of pad 140 and each light-emitting component 120 avoid metal common electrode 130a and shine
Layer 122b, the first type semiconductor layer 122a contact, cause short circuit that display device 100a is enabled to fail.In other words, the gold of the present embodiment
Belong to common electrode 130a will not directly touch luminous element 120 epitaxial structure layer 122 and the first type electrode 124.In particular, insulation
Layer 150 thickness be less than each light-emitting component 120 thickness, and the thickness of insulating layer 150 be, for example, between 1 micron to 3 microns,
It can make display device 100a that there is lesser body mark.
Compared to the existing tin indium oxide (ITO) for using material ductility poor as common electrode, the metal of the present embodiment is total
The material of electrode 130a is rich malleable metal, thus metal common electrode 130a can climb be overlying on insulating layer 150 and along
Insulating layer 150 and with the second type electrode 126 of each light-emitting component 120 be electrically connected.In this way, which electric current transmission effect can be increased
The production yield of rate and display device 100a.Preferably, each metal common electrode 130a is vertical with first on vertical section
Height H1, and each metal common electrode 130a and drive substrate 110 have the second vertical height H2, and first on vertical section
The ratio of vertical height H1 and the second vertical height H2 are between 0.3 to 1.Wherein the second vertical height H2 is each metal common electrode
130a and maximum vertical height of the drive substrate 110 on vertical section.Preferably, the first vertical height H1 is vertical with second high
The ratio of H2 is spent between 0.5 to 1, can increase metal common electrode 130a by side S1 the area of covering luminous element 120.More preferably
, the side of luminescent layer 122b is completely covered in metal common electrode 130a, due to the material of the metal common electrode 130a of the present embodiment
For metal, therefore it can effectively reflect the side that luminescent layer 122b is issued and go out light, the front that can increase light-emitting component 120 whereby goes out
Light efficiency.Herein, H1 is for example between 1 to 10 micron, and H2 is for example between 2 to 10 microns, and but not limited to this.
In short, in the display device 100a of the present embodiment, it is straight using the good metal common electrode 130a of material ductility
It contacts the 126 portion of upper surface 126b of second type electrode of each light-emitting component 120 and forms Ohmic contact, adopted compared to existing
Use the tin indium oxide (ITO) of material ductility difference as the material of common electrode, the present embodiment can effectively increase Ohmic contact
Effect.Further, since the upper surface 126b of second type electrode 126 is not completely covered in metal common electrode 130a, therefore shine
Element 120 can still possess its light emission rate.
It should be noted that, following embodiments continue to use the element numbers and partial content of previous embodiment, wherein adopting herein
Be denoted by the same reference numerals identical or approximate element, and the explanation of same technique content is omitted.About clipped
Explanation can refer to previous embodiment, following embodiment will not be repeated herein.
Fig. 2A is shown as a kind of local overlooking schematic diagram of display device of another embodiment of the present invention.Fig. 2 B is shown as
The partial cutaway schematic of the display device of Fig. 2A.It please also refer to Figure 1A, Figure 1B, Fig. 2A and Fig. 2 B, the display of the present embodiment
Device 100b is similar to the display device 100a of Figure 1A and Figure 1B, and the difference of the two is: each metal common-battery of the present embodiment
Pole 130b include the first metal common electrode 130b1 and the second metal common electrode 130b2, wherein the first metal common electrode 130b1 and
Second metal common electrode 130b2 is covered each by side 126a, 126c and portion of upper surface 126b of second type electrode 126.Also
It is to say, metal common electrode 130b embodies opposite two side faces S1, the S2 for covering each light-emitting component 120, and exposes second type
The portion of upper surface 126b and partial insulative layer 150 of electrode 126.In the embodiment that do not draw, the first metal common electrode and the
Two metal common electrodes are covered each by least any two sides of second type electrode 126, are not limited herein.
Fig. 3 is shown as a kind of local overlooking schematic diagram of display device of another embodiment of the present invention.It please also refer to
Figure 1A and Fig. 3, the display device 100a of display device 100c and Figure 1A of the present embodiment are similar, and the difference of the two is: this reality
The metal common electrode 130c for applying example embodies the surrounding S for covering each light-emitting component 120, and exposes second type electrode 126
Portion of upper surface 126b and partial insulative layer 150.
Fig. 4 is shown as the partial cutaway schematic of the display device of another embodiment of the present invention.It please also refer to Figure 1B
With Fig. 4, the display device 100a of display device 100d and Figure 1B of the present embodiment are similar, and the difference of the two is: the present embodiment
Further include transparency conducting layer 160, be configured on metal common electrode 130a, and at least covering metal common electrode 130a and shine member
Part 120.Herein, the purpose that transparency conducting layer 160 is arranged is electric current uniform conductive, can also protect metal common electrode 130a and hair
Optical element 120 can even help improve the light extraction efficiency of light-emitting component 120.
In conclusion in display device of the invention, it is each through the good metal common electrode contact of ductility and toughness
The part second type electrode of light-emitting component and form Ohmic contact, and high work function interface can provide by metal common electrode and increase
Add the efficiency of Ohmic contact, because of metal common electrode covering part second type electrode, therefore light-emitting component can still possess light emission rate.
In short, display device of the invention can have good element characteristic and preferably production yield.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any technical field
Middle technical staff, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, therefore protection of the invention
Range is subject to view as defined in claim.
Claims (15)
1. a kind of display device, comprising:
Drive substrate；
A plurality of light-emitting elements are dispersedly configured in the drive substrate, and each the multiple light-emitting component includes epitaxial structure
Layer and the first type electrode and second type electrode being configured on the epitaxial structure layer；And
Multiple metal common electrodes, are dispersedly configured in the drive substrate, and contact the part of each the multiple light-emitting component
The second type electrode is to form Ohmic contact.
2. display device according to claim 1, wherein the multiple metal common electrode contacts each second type electrode
Upper surface contact area and each second type electrode the upper surface area ratio be less than or equal to 0.5.
3. display device according to claim 1, wherein the multiple metal common electrode includes that multiple first type metals are total
Electrode and multiple second type metal common electrodes, each the multiple first type metal common electrode and each the multiple second type metal are total
The material of electrode is different.
4. display device according to claim 3, wherein the material of the multiple first type metal common electrode include gold,
The alloy of germanium, nickel or above-mentioned material, and the material of the multiple second type metal common electrode includes the conjunction of titanium, aluminium or above-mentioned material
Gold.
5. display device according to claim 4, wherein each institute of the corresponding contact of the multiple first type metal common electrode
A plurality of light-emitting elements are stated with the first main emission wavelength, and the corresponding contact of the multiple second type metal common electrode is each described
A plurality of light-emitting elements have the second main emission wavelength, and the first main emission wavelength is greater than the described second main luminous wave
It is long.
6. display device according to claim 5, wherein each institute of the corresponding contact of the multiple first type metal common electrode
Stating a plurality of light-emitting elements is red light-emitting element, and each the multiple hair of the corresponding contact of the multiple second type metal common electrode
Optical element is blue light emitting element or green luminescence element.
7. display device according to claim 1, further includes:
Multiple joint sheets are configured in the drive substrate, and are located at the first type electrode of each the multiple light-emitting component
Between the drive substrate.
8. display device according to claim 7, further includes:
Insulating layer is configured in the drive substrate, and covers the institute of the multiple joint sheet and each the multiple light-emitting component
Epitaxial structure layer and the first type electrode are stated, and the multiple metal common electrode is covered on the insulating layer, wherein described
The thickness of insulating layer is less than the thickness of each the multiple light-emitting component.
9. display device according to claim 1, wherein the epitaxial structure layer includes the first type semiconductor layer, luminescent layer
And second type semiconductor layer, the luminescent layer between first type semiconductor layer and second type semiconductor layer,
And the first type electrode and first type semiconductor layer are electrically connected, and the second type electrode is partly led with the second type
Body layer is electrically connected.
10. display device according to claim 9, wherein the multiple metal common electrode covers the side of each luminescent layer
Face.
11. display device according to claim 1, wherein each the multiple metal common electrode has the on vertical section
One vertical height, and each the multiple metal common electrode and the drive substrate have the second vertical height on vertical section,
And the ratio of first vertical height and second vertical height is between 0.3 to 1.
12. display device according to claim 1, wherein the multiple metal common electrode covers each the multiple luminous member
The side of part.
13. display device according to claim 1, wherein each the multiple metal common electrode includes the first metal common electrode
With the second metal common electrode, the first metal common electrode is covered each by each the multiple luminous with the second metal common electrode
The two sides of element.
14. display device according to claim 1, wherein the multiple metal common electrode covers each the multiple luminous member
The surrounding of part.
15. display device according to claim 1, further includes:
Transparency conducting layer is configured in the multiple metal common electrode, and at least covers the multiple metal common electrode and institute
State a plurality of light-emitting elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555460.4A CN109244100B (en) | 2017-07-10 | 2017-07-10 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710555460.4A CN109244100B (en) | 2017-07-10 | 2017-07-10 | Display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109244100A true CN109244100A (en) | 2019-01-18 |
| CN109244100B CN109244100B (en) | 2023-06-06 |
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| CN201710555460.4A Active CN109244100B (en) | 2017-07-10 | 2017-07-10 | Display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111063270A (en) * | 2019-12-30 | 2020-04-24 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| US11387387B2 (en) | 2017-10-13 | 2022-07-12 | PlayNitride Display Co., Ltd. | Micro light emitting device display apparatus |
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| CN1672271A (en) * | 2002-08-01 | 2005-09-21 | 日亚化学工业株式会社 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
| CN102593275A (en) * | 2011-01-13 | 2012-07-18 | 台湾积体电路制造股份有限公司 | Method of fabricating light emitting diode package and light emitting diode thereof |
| US20170179214A1 (en) * | 2013-07-22 | 2017-06-22 | Samsung Display Co., Ltd. | Organic light emitting diode display |
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| CN1672271A (en) * | 2002-08-01 | 2005-09-21 | 日亚化学工业株式会社 | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
| CN102593275A (en) * | 2011-01-13 | 2012-07-18 | 台湾积体电路制造股份有限公司 | Method of fabricating light emitting diode package and light emitting diode thereof |
| US20170179214A1 (en) * | 2013-07-22 | 2017-06-22 | Samsung Display Co., Ltd. | Organic light emitting diode display |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11387387B2 (en) | 2017-10-13 | 2022-07-12 | PlayNitride Display Co., Ltd. | Micro light emitting device display apparatus |
| CN111063270A (en) * | 2019-12-30 | 2020-04-24 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| CN111063270B (en) * | 2019-12-30 | 2022-06-21 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
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| CN109244100B (en) | 2023-06-06 |
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Effective date of registration: 20240506 Address after: 8th Floor, No.13 Kezhong Road, Zhunan Town, Miaoli County, Hsinchu Science Park, Taiwan, China, China Patentee after: PlayNitride Inc. Country or region after: TaiWan, China Address before: Grand Cayman Island, Grand Exhibition Hall Commercial Center, Olander Road, 802 West Bay Road, PO Box 32052, KY1-1208, Cayman Islands Patentee before: PlayNitride Inc. Country or region before: Cayman Islands |