CN111048567B

CN111048567B - Organic photoelectric device

Info

Publication number: CN111048567B
Application number: CN201911349277.4A
Authority: CN
Inventors: 郭立雪; 许显斌; 谢静; 赵杨; 苏乃文
Original assignee: Guan Yeolight Technology Co Ltd
Current assignee: Guan Yeolight Technology Co Ltd
Priority date: 2019-12-24
Filing date: 2019-12-24
Publication date: 2022-07-19
Anticipated expiration: 2039-12-24
Also published as: CN111048567A

Abstract

The application discloses an organic photoelectric device, which comprises a substrate, a first electrode layer, an organic functional layer and a second electrode layer, wherein the first electrode layer, the organic functional layer and the second electrode layer are sequentially formed on the substrate; an electric limiting layer connected with the organic functional layer in parallel is arranged between the first electrode layer and the second electrode layer, and the electric limiting layer is made of a pressure-sensitive material. According to the organic photoelectric device, the over-current limiting layer connected with the organic functional layer in parallel is arranged between the first electrode layer and the second electrode layer of the organic photoelectric device, when the voltage at two ends of the organic photoelectric device exceeds the safe voltage of the device, the over-current limiting layer is limited, the resistance of the over-current limiting layer is reduced, the current passes through the over-current limiting layer, the organic photoelectric device can not be damaged, when the voltage returns to be normal, the resistance of the over-current limiting layer returns to be infinite, and the organic photoelectric device can work normally.

Description

Organic photoelectric device

Technical Field

The disclosure relates to the technical field of organic photoelectric, in particular to an organic photoelectric device.

Background

Organic optoelectronics is a new research field formed by the interdigitation of multiple subjects such as organic chemistry, physics, information electronics science, material science and the like. In particular, organic photoelectric functional materials and devices represented by organic electroluminescent devices (OLEDs), organic photovoltaic devices (OPVs) and organic field effect transistors (OTFTs) show wide application prospects in the fields of novel flat panel display, solid-state lighting, high-density information transmission and storage, new energy, photochemistry and the like, and are generally concerned by the scientific and industrial fields. For example, the OLED technology has many advantages such as full solid state, active light emission, rich colors, and flexible display, and is considered as one of the most promising new flat panel display technologies, and is gradually produced in a full sphere in a large scale. OPV and organic/inorganic hybrid solar cell (such as perovskite solar cell) technologies are considered to be sustainable green energy technologies with great development potential due to the advantages of low cost, simple process, easy fabrication of large-area devices, and the like. At present, the photoelectric conversion efficiency of the solar cell approaches the practical requirement. OTFTs have become a hotspot in organic electronics with their advantages of low cost, processability on flexible substrates, low-temperature film formation, large-area fabrication, etc., and their performance has been comparable to that of amorphous silicon.

OLED (Organic Light Emitting Diode, chinese name Organic Light Emitting display) refers to a phenomenon in which an Organic semiconductor material and a Light Emitting material emit Light by carrier injection and recombination under electric field driving. A display or a lighting product manufactured according to such a light emitting principle is called an organic light emitting display or an organic light emitting lighting device. The flexibility, the bending and the ultrathin become the future development direction of the OLED screen body.

However, the above organic optoelectronic devices still have many problems to be solved, for example, the OLED panel may be affected by static electricity during actual operation to cause panel breakdown, or the OLED panel may suffer from voltage or current exceeding its acceptable range due to circuit problems during operation to cause panel breakdown and failure.

The pressure-sensitive structure formed by the pressure-sensitive material has the following characteristics in resistance as shown in figure 1: when the voltage at two ends of the capacitor is less than or equal to the threshold voltage (also called voltage-sensitive voltage), the resistance of the capacitor is infinite, the voltage-sensitive structure is equivalent to an insulator, and when the voltage at two ends of the capacitor reaches the voltage-sensitive voltage, the resistance of the capacitor can be immediately reduced to realize electric conduction; the voltage-sensitive structure shown in fig. 1 has a large resistance corresponding to an insulator when the voltage across the structure is less than 15V; when the voltage between the two ends of the voltage-sensitive structure reaches 15V, the resistance of the voltage-sensitive structure is rapidly reduced and the voltage-sensitive structure can conduct electricity, so that the voltage of 15V is the voltage-sensitive voltage of the voltage-sensitive structure.

The working voltage of the OLED screen body is constant, generally 4-5V, when the circuit fault occurs, the voltage of the OLED screen body can rise, the OLED screen body becomes very bright, and then the OLED screen body is burnt out, and the more the voltage exceeds the safety voltage, the shorter the time from the high bright point to the burning out of the OLED screen body is; therefore, the OLED generally has safe voltage, the safe voltage of different OLED screens is different according to the structure of the device, and generally, after the voltage of the OLED screens is greater than the safe voltage for a period of time, the screens are burnt out.

Disclosure of Invention

In view of the above-mentioned drawbacks or deficiencies in the prior art, it would be desirable to provide an organic optoelectronic device that can avoid the effects of high voltages.

In a first aspect, the present application provides an organic optoelectronic device, comprising a substrate, and a first electrode layer, an organic functional layer, and a second electrode layer sequentially formed on the substrate; an electric limiting layer connected with the organic functional layer in parallel is arranged between the first electrode layer and the second electrode layer, and the electric limiting layer is made of a pressure-sensitive material.

The overvoltage limiting layer has a voltage V_{Pressure sensitive}Safety voltage V with organic optoelectronic devices_SecureThe following relations are satisfied between the two components:

V_{pressure sensitive}＝k*V_SecureAnd k is a constant between 0.7 and 1.3. The setting of k is determined according to the actual working environment of different device structures, and the risk that the device is burnt after reaching the voltage is taken as a boundary.

According to the technical scheme provided by the embodiment of the application, the first electrode layer is provided with a first extension area at the edge of the substrate; the second electrode layer is provided with a second extension region at the edge of the substrate; the electrical confinement layer connects the first extension region and the second extension region.

According to the technical scheme provided by the embodiment of the application, the first extension region is an external electric connection region of the first electrode layer; the second extension region is an external electrical connection region of the second electrode layer.

According to the technical scheme provided by the embodiment of the application, the electric limiting layer is formed by one of plasma enhanced chemical vapor deposition, radio frequency magnetron sputtering, metal organic chemical vapor deposition, pulse laser deposition or sol-gel.

According to the technical scheme provided by the embodiment of the application, the electric limiting layer is further patterned by a dry etching method, a wet etching method or an ion etching method.

According to the technical scheme provided by the embodiment of the application, an insulating region is arranged between the first electrode layer and the second electrode layer; the insulating region is formed on the first electrode layer and isolates a pixel region on the first electrode layer, and the organic functional layer is positioned in the pixel region; all or part of the insulating region is made of the pressure-sensitive material to form the electrical limiting layer.

According to the technical scheme provided by the embodiment of the application, the pressure-sensitive material is at least one of zinc oxide, silicon carbide, silicon oxide, titanium oxide and silicon nitride.

According to the technical scheme provided by the embodiment of the application, the thickness of the electric limiting layer ranges from 0.01 μm to 5 μm.

According to the technical scheme provided by the embodiment of the application, the current-voltage characteristic of the over-current limiting layer meets the following formula:

I＝(U/K)^α

u is the voltage at two ends of the over-current limiting layer, I is the working current of the over-current limiting layer, and K is the resistance of the voltage-sensitive film; wherein alpha is a nonlinear coefficient, and alpha is more than or equal to 15 in order to make the feedback of the screen body more sensitive.

The beneficial effect of this application is: the over-current limiting layer connected with the organic functional layer in parallel is arranged between the first electrode layer and the second electrode layer of the organic photoelectric device, when the voltage at two ends of the organic photoelectric device exceeds the safe voltage of the device, the over-current limiting layer also reaches the voltage-sensitive voltage, the resistance of the over-current limiting layer is reduced, the current passes through the over-current limiting layer, when the organic photoelectric device is an OLED screen body, the light-emitting area of the OLED can not be damaged, when the voltage returns to be normal, the resistance of the over-current limiting layer returns to be infinite, and the OLED screen body can work normally. Meanwhile, under the normal working condition, the over-current limiting layer is almost insulated, and the normal work of the OLED screen body is not influenced.

According to the technical scheme provided by the embodiment of the application, the over-current limiting layer can be directly used as an insulating layer of the OLED screen body, or the insulating layer of the OLED screen body can have the functions of both an insulating layer and an over-current limiting layer by replacing the material of the insulating layer with a pressure-sensitive material; therefore, on the premise of not increasing the original manufacturing process of the OLED screen body, the problem that the screen body is broken down due to static electricity in the actual working process of the OLED screen body is solved, the problems that when the voltage born by the OLED screen body exceeds the acceptable range due to the circuit problem in the operation process, the screen body is broken down and loses efficacy are solved, the bearing capacity of the OLED screen body on high voltage and static electricity is improved, and the service life of the OLED screen body is prolonged.

Drawings

Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:

FIG. 1 is a plot of the current-voltage characteristic of a pressure sensitive structure;

FIG. 2 is a schematic cross-sectional view of an OLED panel in example 1 of the present application;

FIGS. 3 to 7 are schematic structural diagrams of respective fabrication steps of a first embodiment of an electrical confinement layer in example 1 of the present application;

FIGS. 8 to 12 are schematic structural diagrams of respective fabrication steps of a second embodiment of an electrical confinement layer in example 1 of the present application;

FIG. 13 is a graph of the thickness of an over-current confinement layer as a function of voltage when the over-current confinement layer is formed of zinc oxide;

FIG. 14 is a schematic circuit diagram of an electrical confinement layer and an organic functional layer according to the present application;

FIG. 15 is a schematic structural diagram of a first embodiment of an electrical confinement layer in example 2 of the present application;

FIGS. 16 to 18 are schematic structural diagrams of the respective fabrication steps of the second embodiment of the electrical confinement layer in example 2 of the present application;

FIG. 19 is a schematic structural diagram of a third embodiment of an electrical confinement layer in example 2 of the present application;

reference numbers in the figures:

10. a substrate; 20. a first electrode layer; 30. an organic functional layer; 40. a second electrode layer; 50. an overvoltage limiting layer; 21. a first extension region; 41. a second extension region; 21a first extending flange; 41a, a second extending flange; 21b, a first pair of outer electrical connection regions; 41b, a second pair of outer electrical connection regions; 60. an insulating region; 70. a packaging region; 51. an insulating film preparation section.

Detailed Description

The present application will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.

It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

Example 1

Referring to fig. 2, the present embodiment provides an organic optoelectronic device, which includes a substrate 10, and a first electrode layer 20, an organic functional layer 30 and a second electrode layer 40 sequentially formed on the substrate 10; an electrical limiting layer 50 connected with the organic functional layer 30 in parallel is arranged between the first electrode layer 20 and the second electrode layer 40, and the material of the electrical limiting layer 50 is a pressure-sensitive material.

V_{pressure sensitive}＝k*V_SecureK is a constant between 0.7 and 1.3;

wherein a safety voltage V_SecureArranged according to different device structures, generally with the operating voltage V of the organic opto-electronic device₀Satisfies the following relationship:

V_Secure＝m*V₀m is greater than or equal to 2 and less than or equal to 5; for example, if the operating voltage of the OLED device is 5V, the safe voltage V_SecureIt is a value between 10V and 25V when the OLED device reaches a safe voltage V_SecureAnd meanwhile, the OLED screen body is highlighted by the point, and the screen body is possibly burnt after the highlight state lasts for a period of time.

Wherein, the organic photoelectric device in the embodiment is an OLED device;

the substrate 10 is a glass substrate and is used as a carrier of the whole OLED device;

the first electrode layer 20 is, for example, an ITO anode, and is formed by plating a layer of indium tin oxide (commonly referred to as ITO) film on a substrate by various methods such as sputtering and evaporation;

the organic functional layer 30 includes, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in this order;

the second electrode layer 40 is formed by, for example, evaporating an alloy cathode;

in the present embodiment, the electrical confinement layer 50 is implemented by:

the first electrode layer 20 is provided with a first extension region 21 at the edge of the substrate 10; the second electrode layer 40 is provided with a second extension region 41 at the edge of the substrate 10; the electrical confinement layer 50 is connected between the first extension region 21 and the second extension region 41. The electrical confinement layer 50 is formed by any one of plasma enhanced chemical vapor deposition, radio frequency magnetron sputtering, metal organic chemical vapor deposition, pulsed laser deposition, or sol gel, which may be spin coating or slit coating, for example. The material is a pressure-sensitive material, and the specific selectable pressure-sensitive material is one, two or more of zinc oxide, silicon carbide, silicon oxide, titanium oxide and silicon nitride.

When the over-current limiting layer is coated by spin coating or slit coating, the over-current limiting layer needs to be further patterned by a dry etching method, a wet etching method or an ion etching method, so that the size meets the requirement.

The embodiments of the first extension region 21 and the second extension region 41 are selectable in two ways:

1. as shown in fig. 3 to 7, when the first electrode layer 20 is formed on any one side edge of the OLED panel, a first extending convex edge 21a is provided; when the second electrode layer 40 is formed, a second extending convex edge 41a is provided; the first extension flange 21a and the second extension flange 41a are both in direct contact with the substrate 10 and are offset in the plane of the substrate 10; and the electrical limiting layer 50 connects the first extended convex edge 21a and the second extended convex edge 41 a;

at the time of manufacturing, the manufacturing method comprises the following steps:

a. firstly, sputtering a layer of material of a first electrode in a packaging area 70 on a substrate 10 through a sputtering process, and then forming a first electrode layer 20 in a patterning mode; the dashed boxes in fig. 2 represent the package areas; the first electrode layer 20 is further away from the edge of the packaging region by a margin; at this time, the edge of the first electrode layer 20 is formed with a first pair of external electrical connection regions 21b and a first extension flange 21 a; wherein the first pair of outer electrical connection areas 21b are partially disposed within the package region 70 and partially disposed outside the package region 70 for connection to an external power source; the first extended flange 21a is located in the encapsulation area 70;

b. as shown in fig. 4, an insulating material is sputtered on the region of the package region 70 except for the first extended raised edge 21a, and the insulating material is patterned to form an insulating region 60;

c. as shown in fig. 5, an organic functional layer 30 is formed in the insulating region 60 in a region not covered by the first electrode layer 20 by evaporation;

d. as shown in fig. 6, the second electrode layer 40 is formed on the insulating region 60 and the organic functional layer 30; at this time, the edge of the second electrode layer 40 straddles the insulating region 60 and is provided with a second pair of outer electrical connection regions 41b extending correspondingly to the first pair of outer electrical connection regions 21b, and a second extending convex edge 41a extending correspondingly to the first extending convex edge 21a and toward the substrate 10; the first pair of external electrical connection areas 21b and the second pair of external electrical connection areas 41b are arranged at intervals and are respectively used for connecting the positive electrode and the negative electrode of an external power supply;

e. as shown in fig. 7, the electrical confinement layer 50 is formed by one of plasma enhanced chemical vapor deposition, rf magnetron sputtering, metal organic chemical vapor deposition, pulsed laser deposition or sol-gel in the region corresponding to the region between the first extended convex edge 21a and the second extended convex edge 41 a; the portion of the grid line shown in fig. 5 is the electrical confinement layer 50, and covers both the first extended convex edge 21a and the second extended convex edge 41a, so as to achieve electrical conduction between the first electrode layer 20 and the second electrode layer 40.

2. As shown in fig. 8 to 12, on the substrate of the OLED panel, the first electrode layer 20 and the second electrode layer 40 are both provided with external electrical connection regions, the first electrode layer 20 is provided with a first pair of external electrical connection regions 21b, and the second electrode layer 40 is provided with a second pair of external electrical connection regions 41 b; and the electrical confinement layer 50 connects the first pair of outer electrical connection regions 21b and the second pair of outer electrical connection regions 41 b; the first pair of external electrical connection areas 21b are connected with the positive electrode of the power supply, and the second pair of external electrical connection areas are connected with the negative electrode 41b of the power supply and are used for electrifying the OLED screen body to work;

a. firstly, sputtering a layer of material of a first electrode in a packaging area 70 on a substrate 10 by a sputtering process, and then forming a first electrode layer 20 in a patterning mode; the dashed box in fig. 8 represents the encapsulation area; the first electrode layer 20 is further away from the edge of the packaging region by a margin; at this time, a first pair of external electrical connection regions 21b are formed at the edge of the first electrode layer 20; wherein the first pair of outer electrical connection regions 21b are partially within the package region 70 and partially outside the package region 70 for connection to an external power source;

b. as shown in fig. 9, an insulating material is sputtered in the package region 70 except for the first pair of outer electrical connection regions 21b, and the insulating material is patterned to form an insulating region 60;

c. as shown in fig. 10, an organic functional layer 30 is formed by evaporation in the region of the insulating region 60 not covered by the first electrode layer 20;

d. as shown in fig. 11, the second electrode layer 40 is formed on the insulating region 60 and the organic functional layer 30; at this time, the edge of the second electrode layer 40 crosses the insulation region 60 and is provided with a second pair of outer electrical connection regions 41b extending correspondingly to the first pair of outer electrical connection regions 21b, and the first pair of outer electrical connection regions 21a and the second pair of outer electrical connection regions 41b are arranged at intervals and are respectively used for connecting the positive pole and the negative pole of an external power supply;

e. as shown in fig. 12, the electrical confinement layer 50 is formed in the package region 70 at the region corresponding to the first and second outer pair of

electrical connection regions

21b and 41b by one of plasma enhanced chemical vapor deposition, rf magnetron sputtering, metal organic chemical vapor deposition, pulsed laser deposition or sol-gel; the portion of the grid lines shown in fig. 10 is the electrical limiting layer 50, which covers both the first pair of outer electrical connection areas 21b and the second pair of outer electrical connection areas 41b in the package area 70, so as to electrically connect the first electrode layer 20 and the second electrode layer 40.

In both embodiments, the electrical confinement layer 50 and the organic functional layer 30 are electrically connected in parallel as shown in fig. 13;

the voltage-sensitive film formed by the electric limiting layer 50 is a film with nonlinear volt-ampere characteristics; the volt-ampere characteristic of the high-voltage resistor meets the following formula:

I＝(U/K)^α

wherein U is the voltage at two ends of the over-current limiting layer, I is the working current of the over-current limiting layer, K is the resistance of the over-current limiting layer, and alpha is a nonlinear coefficient; the two parameters can change along with the change of voltage, when the voltage does not reach the voltage-sensitive voltage of the voltage-sensitive film, the K value is large, and a is small; when the voltage reaches the voltage-sensitive voltage of the voltage-sensitive film, the K value is small, and a is large; in order to make the screen body feedback more sensitive, alpha is more than or equal to 15 when the pressure-sensitive film is used.

Therefore, when the voltage applied to the voltage-sensitive film is lower than the threshold value (voltage-sensitive voltage), the current flowing through the voltage-sensitive film is extremely small, the voltage-sensitive film is equivalent to a resistor with infinite resistance and is in an insulated state, when the voltage applied to the voltage-sensitive film is lower than the threshold value (voltage-sensitive voltage), the voltage-sensitive film is equivalent to a switch in an off state, and the voltage of the OLED screen is lower than the voltage-sensitive voltage of the over-current limiting layer, namely, when the OLED screen normally works, the voltage-sensitive film is switched off, and the normal work of the OLED screen is not influenced.

When the voltage applied to the voltage-sensitive film exceeds its threshold value (voltage-sensitive voltage), the current flowing through it increases sharply, which corresponds to a resistor having an infinitesimal resistance. That is, when the voltage applied to it is higher than its threshold (voltage-dependent voltage), it corresponds to a closed-state switch. When the voltage of the OLED screen body is increased sharply and exceeds the safe voltage, the pressure-sensitive film is closed to be in short circuit, and the short-circuit protection device of the OLED screen body can switch off the OLED screen body.

The following specific experiments are provided below for a detailed comparison, wherein the experimental conditions of each experiment are shown in table 1 below, and the experimental results of each experiment are shown in table 2 below:

TABLE 1

Contrast item	Results of the experiment
		Comparative example 1	Is burnt out after being electrified for 60s
Comparative example No. two	62s are burnt out after being electrified
		Example one	After power-on, the power is cut off immediately, and the restart screen body continues to be effective
Example two	After power-on, the power is cut off immediately, and the restart screen body continues to be effective
		EXAMPLE III	After power-on for 10s, the power is cut off, and the restart screen body continues to be effective
Example four	After power-on for 20s, the power is cut off, and the restart screen body continues to be effective

TABLE 2

As can be seen from the above experimental examples, when the voltage-dependent voltage of the current-limiting layer is much higher than the safe voltage of the device or the current-limiting layer is not present in the device, the device will be burned out when the operating voltage is too high; when the current limiting layer is arranged in the device and the voltage-sensitive voltage of the current limiting layer is close to the safe voltage of the device, the device can be protected and prevented from being burnt; preferably, the voltage-dependent voltage of the current-limiting layer is less than or equal to its safe voltage or slightly greater than its safe voltage; the greater the voltage-dependent voltage of the current-limiting layer is, and the greater the difference, the greater the risk of the device being burned out.

Therefore, in order to prevent misoperation of high voltage, the relation between the voltage-sensitive voltage and the breakdown voltage of the organic photoelectric device is as follows by selecting the material and the thickness of the voltage-sensitive film: v_{Pressure sensitive}＝(0.7-1.3)*V_{Breakdown of}(ii) a For OLED devices, the voltage-dependent voltage of the over-current limiting layer can be selected from 15V-100V, and the leakage current is less than 10^-5And A, preventing the device performance from being influenced.

In order to ensure the voltage-sensitive voltage, leakage current and volt-ampere characteristics of the over-current limiting layer, the thickness of the current limiting layer ranges from 0.01 μm to 5 μm; the specific thickness is selected according to the desired voltage-dependent voltage to be achieved, i.e. the safe voltage of the applied device, and also the material selected, as shown in fig. 14, which is a graph of the thickness of the current-limiting layer when zinc oxide is used as the material; if the required voltage is 15V, zinc oxide with thickness of 120nm is preferably used.

Therefore, it can be seen from the above comparison experiment that the technical solution provided by this embodiment enables the voltage-sensitive film to be turned on when the voltage at the two ends of the screen exceeds the safe voltage due to misoperation (voltage surge or static electricity), the short-circuit protection device in the circuit becomes effective, and the circuit is turned off. When the OLED screen body is normally started again, the OLED screen body can normally work. The screen body is prevented from being damaged irreversibly due to high voltage in a light emitting area of the screen body, the screen body is prevented from losing efficacy, the OLED screen body is protected, and the service life of the OLED screen body is prolonged.

Example 2

In addition to example 1, the implementation of the electrical confinement layer 50 in this example is changed to: the method is directly realized by adopting an insulating region in the organic photoelectric device, and specifically comprises the following steps:

as shown in fig. 15, taking an OLED screen as an example, in the structure of the OLED device, an insulating region 60 is disposed between the first electrode layer 20 and the second electrode layer 40; the insulating region 60 is formed on the first electrode layer 20 and separates a pixel region on the first electrode layer 20, in which the organic functional layer 30 is located; the insulating region 60 is used to isolate the first electrode layer 20 from the second electrode layer 40, and also to isolate adjacent pixels; the general material is organic material, such as phenolic resin, polyimide, etc.; in this embodiment, the material of the whole area of the insulating region 60 is directly replaced by a pressure-sensitive material, so that the insulating region of the original OLED device has both an insulating function and an electrical confinement layer function.

The electrical confinement layer may also be implemented using a partial region of the insulating region 60:

1. for example, as shown in fig. 16-18, a pressure-sensitive material is applied to a partial region of the insulating region 60 located at the edge of the OLED panel, so as to form an electrical confinement layer 50 at the edge of the OLED panel;

a. as shown in fig. 7, a layer of material of the first electrode is sputtered in the package region 70 on the substrate 10 by a sputtering process, and then the first electrode layer 20 is formed by patterning; the dashed box in fig. 6 represents the encapsulation area 70; the first electrode layer 20 is further away from the edge of the packaging region by a margin; at this time, a first pair of external electrical connection regions 21b are formed at the edge of the first electrode layer 20; wherein the first pair of outer electrical connection regions 21b are partially within the package region 70 and partially outside the package region 70 for connection to an external power source;

b. as shown in fig. 16, an insulating material is sputtered in the region excluding the insulating film preparation region 51 in the package region 70, and the insulating material is patterned to form an insulating region 60;

c. as shown in fig. 17, an electrical confinement layer 50 is formed in the insulating film formation region 51 by one of plasma-enhanced chemical vapor deposition, radio frequency magnetron sputtering, metal organic chemical vapor deposition, pulsed laser deposition, or sol-gel;

d. as shown in fig. 18, an organic functional layer 30 is formed by evaporation in the region of the insulating region 60 not covered by the first electrode layer 20;

e. finally, forming a second electrode layer 40 on the insulating region 60, the electrical confinement layer 50 and the organic functional layer 30; at this time, the edge of the second electrode layer 40 crosses over the insulating region 60 and is correspondingly provided with a second pair of external electrical connection regions 41b extending from the first pair of external electrical connection regions 21b, and the first pair of external electrical connection regions 21b and the second pair of external electrical connection regions 41b are arranged at intervals and are respectively used for connecting the positive electrode and the negative electrode of an external power supply;

2. for example, as shown in fig. 19, a partial region of the insulating region 60 located inside the OLED panel is made of a pressure-sensitive material, so that an electrical confinement layer 50 is formed inside the OLED panel; this embodiment is similar to the above-described embodiment, and the only difference is that the insulating film formation region 51 is located inside the insulating region 60.

The working voltage of the conventional OLED screen is 4V, when the voltage across the screen exceeds its safe voltage (e.g. 15V), for example 20V, the conventional OLED screen is burned out, and the OLED screens provided in the embodiments 1 and 2 are automatically short-circuited by the conduction of the over-current limiting layer, and further the short-circuit protection circuit in the circuit passing through the OLED screen cuts off the circuit; when the circuit of the OLED screen body is restarted, the OLED screen body works normally, the OLED screen body is effectively protected, and the service life of the OLED screen body is prolonged.

The foregoing description is only exemplary of the preferred embodiments of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims

1. An organic photoelectric device is characterized by comprising a substrate, and a first electrode layer, an organic functional layer and a second electrode layer which are sequentially formed on the substrate; an electric limiting layer connected with the organic functional layer in parallel is arranged between the first electrode layer and the second electrode layer, and the electric limiting layer is made of a pressure-sensitive material; an insulating region is arranged between the first electrode layer and the second electrode layer; the insulating region is formed on the first electrode layer and isolates a pixel region on the first electrode layer, and the organic functional layer is positioned in the pixel region; all or part of the insulating region is made of the pressure-sensitive material to form the electrical limiting layer.

2. The organic optoelectronic device according to claim 1, wherein the electrical confining layer has a voltage V_{Pressure sensitive}Safe voltage V with organic optoelectronic device_SecureThe following relations are satisfied:

V_{pressure sensitive}＝k*V_SecureAnd k is a constant between 0.7 and 1.3.

3. The organic optoelectronic device of claim 2, wherein the electrical confinement layer is further patterned by dry etching, wet etching, or ion etching.

4. The organic optoelectronic device according to any one of claims 1 to 3, wherein the pressure sensitive material is at least one of zinc oxide, silicon carbide, silicon oxide, titanium oxide, and silicon nitride.

5. The organic optoelectronic device according to any one of claims 1 to 3, wherein the thickness of the electrical confinement layer is in the range of 0.01 μm to 5 μm.

6. The organic optoelectronic device according to any one of claims 1 to 3, wherein the current-voltage characteristic of the electrical confinement layer satisfies the following formula:

I＝(U/K)^α

wherein U is the voltage at two ends of the over-current limiting layer, I is the working current of the over-current limiting layer, and K is the resistance of the voltage-sensitive film; where α is a nonlinear coefficient.