CN101609869B - Dye-sensitized optotransistor and preparation method thereof - Google Patents
Dye-sensitized optotransistor and preparation method thereof Download PDFInfo
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- CN101609869B CN101609869B CN200910055090.3A CN200910055090A CN101609869B CN 101609869 B CN101609869 B CN 101609869B CN 200910055090 A CN200910055090 A CN 200910055090A CN 101609869 B CN101609869 B CN 101609869B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000002159 nanocrystal Substances 0.000 claims abstract description 27
- 238000000866 electrolytic etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000003792 electrolyte Substances 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 230000001235 sensitizing effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000000975 dye Substances 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 4
- 230000011218 segmentation Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 5
- 230000001413 cellular effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a dye-sensitized optotransistor and a preparation method thereof. The dye-sensitized optotransistor comprises a first electrode and a second electrode, an electrolyte, a dye sensitizer and a nanocrystal semiconductor, the electrolyte and the dye sensitizer are arranged between the first electrode and the second electrode, and the nanocrystal semiconductor is formed on the second electrode in an adherence manner. The second electrode is composed of a transparent substrate and a conducting layer formed on the transparent substrate, the conducting layer is generated by segmentation of an insulating channel to form a source electrode and a drain electrode at two sides of the insulating channel and the nanocrystal semiconductor covers the insulating channel, the source electrode and the drain electrode. A second conducting layer of the second electrode is segmented into a source electrode and a drain electrode by electroetching, thus obtaining the novel dye-sensitized optotransistor based on a dye-sensitized cell unit structure. The dye-sensitized optotransistor of the invention adopts an oxide wide band gap semiconductor, which has the advantages of low material cost, insensitivity to background noise and capability of enlarging spectral response range by selection of various dyes.
Description
Technical field
The present invention relates to a kind of transistor and preparation method thereof, relate in particular to a kind of dye-sensitized optotransistor and preparation method.
Background technology
Optotransistor is important in a fiber optic communication field device, has possessed functions such as opto-electronic conversion, light-operated switch, photo-detector and light-operated logical device.Because light induced electron, hole even cause existing photoirradiation, still can not provide significant photogenerated current at the multiple mechanism of material itself under source-drain voltage.In order to overcome this difficulty, common way is that the back side (non-irradiation face) at device adds insulating barrier and tailgate electrode, utilize a certain charge carrier of statcoulomb gravitational attraction of outer bias voltage, make light induced electron and hole in material bodies, produce apart, thereby another kind of charge carrier further appears in the material irradiation face, reduce recombination probability greatly, thereby improved the photogenerated current of optotransistor.
Common photocon comprises heterojunction solar cell unit (p-n junction), and it is because internal electric field makes light induced electron and hole near the space charge region realize separation of charge.And this internal electric field might be subjected to the influence of source-drain voltage, and then influences the stability of optotransistor performance.
On the other hand, in order to prepare photocon, usually need be in substrate etching one bar insulation raceway groove, to form source electrode and drain electrode.Traditional lithographic technique comprises laser ablation, chemical acid etch, ion beam etching.But these lithographic method more complicated, and cost costliness.
At the existing problem of above-mentioned two aspect technology, this case designer is by means of being engaged in the industry experiment experience for many years, and dye-sensitized optotransistor and preparation method based on the dye-sensitized cell unit have been invented in the active research improvement.The dye-sensitized optotransistor invented adopts the oxide wide band gap semiconducter, has that the cost of material is low, insensitive and can select to enlarge the spectral response range advantage by different dyes to background noise.
Summary of the invention
The objective of the invention is defective, a kind of dye-sensitized optotransistor based on the dye-sensitized cell cellular construction is provided at the prior art existence.
Another purpose of the present invention is the preparation method that a kind of described dye-sensitized optotransistor is provided at the defective of prior art.
For achieving the above object, the present invention adopts following technical scheme:
A kind of dye-sensitized optotransistor, comprise and be towards first electrode and second electrode that are provided with, it is characterized in that between first electrode and second electrode, having electrolyte, dye sensitizing agent and adhesion to be formed on nano crystal semiconductor on second electrode, described second electrode is made of transparent substrates and the conductive layer that is formed on the transparent substrates, described conductive layer is cut apart source electrode and the drain electrode that is formed on the insulated trenches both sides by insulated trenches, and described nano crystal semiconductor covers insulated trenches, source electrode and drain electrode).
Above-mentioned nano crystal semiconductor is the titanium dioxide nanocrystalline particle.
The furrow width of above-mentioned insulated trenches is 10～200 μ m.
The area of the nano crystal semiconductor (15) that above-mentioned insulated trenches, source electrode and drain surface cover is 5 * 5mm
2
The preparation method of above-mentioned dye-sensitized optotransistor is characterized in that the concrete steps of this method are:
A. the electroetching of the conductive layer of second electrode;
A, the auxiliary electrode of external power is electrically connected with treating the electroetching conductive layer, the work electrode of external power is needle-like and conductive layer moves and electrically contact;
The voltage of b, modulation external power, voltage transfers to 1～80V, and rated current is 0.1～10A, and work electrode is moved along the insulated trenches direction that is about to form, and just electroetching forms insulated trenches;
B. the coating of nano crystal semiconductor; The brilliant semiconductor of coated with nano on second electrode by silk screen printing or spraying method, at the brilliant semiconductor of described insulated trenches place coated with nano, the feasible film that is formed by nano crystal semiconductor covers insulated trenches and is positioned at the source electrode and the drain electrode of insulated trenches and arranged on left and right sides;
C. the absorption of dye sensitizing agent: second electrode that will be coated with nano crystal semiconductor is immersed in the solution of dye sensitizing agent, soaks 12～36 hours;
The encapsulation of D. electrolytical injection and dye-sensitized optotransistor.
Electrolyte is injected in the cavity that forms between first electrode and second electrode, and adopting heat-sealing film again is one with first electrode and second electrode package.
The furrow width of above-mentioned insulated trenches (1221) is 10～200 μ m.
The area of the nano crystal semiconductor that above-mentioned insulated trenches, source electrode and drain surface cover is 5 * 5mm
2
The present invention reaches the structural design that forms source electrode and drain electrode in the both sides of described insulated trenches respectively by the electroetching method in second conductive layer formation insulated trenches of second electrode, obtains a kind of novel dye-sensitized optotransistor based on the dye-sensitized cell cellular construction.The dye-sensitized optotransistor invented adopts the oxide wide band gap semiconducter, has that the cost of material is low, insensitive and can select to enlarge the spectral response range advantage by different dyes to background noise.
Description of drawings
Fig. 1 is the perspective view of dye-sensitized optotransistor of the present invention;
Fig. 2 is the insulated trenches etching device schematic diagram of dye-sensitized optotransistor of the present invention.
Fig. 3 is the V-I curve chart of dye-sensitized optotransistor of the present invention;
Embodiment
By describing technology contents of the present invention, structural feature in detail, being reached purpose and effect, described in detail below in conjunction with example and cooperation diagram.
Fig. 1 illustrates the dye-sensitized optotransistor 1 based on the dye-sensitized cell cellular construction.Described dye-sensitized optotransistor 1 comprise be towards first electrode 11 that is provided with and second electrode 12, between first electrode 11 and second electrode 12 electrolyte 13, dye sensitizing agent 14 and adhere to the nano crystal semiconductor 15 that is formed on second electrode 12.Nano crystal semiconductor 15 is the titanium dioxide nanocrystalline particle preferably.Be sealed to one by heat-sealing film 16 between first electrode 11 and second electrode 12.Dye sensitizing agent 14 is adsorbed on the surface of nano crystal semiconductor 15.First electrode 11 comprises first substrate of glass 111 and is formed on first conductive layer 112 on first substrate of glass 111.First conductive layer 112 is FTO or ITO preferably.Simultaneously, form transparent catalyst layer 113 at described first conductive layer 112 towards second electrode, 12 1 sides.Described catalyst layer 113 is platinum layer preferably.Described first substrate of glass 111, first conductive layer 112 and catalyst layer 113 are the stacked layout of levels shape.Second electrode 12 is by second substrate of glass 121 and be formed on second conductive layer 122 on second substrate of glass 121.Second conductive layer 122 is FTO or ITO preferably.Wherein, second conductive layer 122 is through the electroetching method, in the predeterminated position formation insulated trenches 1221 of second conductive layer 122.Wherein, predeterminated position with will be corresponding by the formed pre-etching pattern of described electroetching method.In the present invention, the described predeterminated position horizontal centre position of second conductive layer 122 preferably.The width of described insulated trenches 1221 is about 10～200 μ m.Second conductive layer 122 is divided into source electrode 1222 and the drain electrode 1223 that is positioned at described insulated trenches 1221 both sides after by electroetching method electroetching.
See also 1, and in conjunction with consulting Fig. 2, the preparation method's of dye-sensitized optotransistor 1 concrete steps are:
1. the electroetching of second conductive layer 122 of second electrode 12:
A, the auxiliary electrode 21 of external power 2 is electrically connected with second conductive layer 122 for the treatment of electroetching, the work electrode 22 of external power 2 is needle-like and second conductive layer 122 moves and electrically contact;
The voltage of b, modulation external power 2, the voltage of described external power 2 transfers to 1～80V, rated current is 0.1～10A, the work electrode 22 that will have point discharge and superheating phenomenon is along soon moving by formed insulated trenches 1221 directions of described electroetching method, make the structure of conductive oxide crystal and the component of the second scanned conductive layer 122 obtain destroying, become insulator and part and burn volatilization and stay insulated trenches 1221.The live width of described insulated trenches 1221 is 10～200 μ m.
2. the coating of nano crystal semiconductor 15:
By the brilliant semiconductor 15 of existing preparation methods such as silk screen printing, spraying coated with nano on second electrode 12.Wherein, apply one deck nano crystal semiconductor 15 at described insulated trenches 1221 places, the feasible film that is formed by nano crystal semiconductor 15 covers insulated trenches 1221 and is positioned at the source electrode 1221 and the drain electrode 1222 of insulated trenches 1221 and arranged on left and right sides.The film size that described nano crystal semiconductor 15 forms is 5 * 5mm
2
3. the absorption of dye sensitizing agent 14.
Second electrode 12 that is coated with nano crystal semiconductor 15 is immersed in the solution of dye sensitizing agent 14, soaked 12～36 hours.
4. the encapsulation of the injection of electrolyte 13 and dye-sensitized optotransistor 1.
Electrolyte 13 is injected in the cavity that forms between first electrode 11 and second electrode 12, adopts heat-sealing film 16 that first electrode 11 and second electrode 12 are packaged as a whole again.
See also Fig. 3, described dye-sensitized optotransistor 1 with source electrode 1221 and drain electrode 1222 shows the transport behavior of photoinitiator dye sensitization optotransistor 1 under the irradiation of different light intensity.In the present invention, the spectral region of the exposure light of dye-sensitized optotransistor 1 is by the spectral region decision of dye sensitizing agent 14.
In sum, reach the structural design that forms source electrode 1222 and drain electrode 1223 in the both sides of described insulated trenches 1221 respectively by the electroetching method in second conductive layer, the 122 formation insulated trenches 1221 of second electrode 12, obtain a kind of novel dye-sensitized optotransistor 1 based on the dye-sensitized cell cellular construction.The dye-sensitized optotransistor invented 1 adopts the oxide wide band gap semiconducter, has that the cost of material is low, insensitive and can select to enlarge the spectral response range advantage by different dyes to background noise.。
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can make amendment and modification to the present invention.If but when any modification and modification fall in the protection range of appended claims and equivalent, think that these are revised and modification is contained by the present invention.
Claims (7)
1. dye-sensitized optotransistor, comprise first electrode (11) and second electrode (12) that are towards being provided with, it is characterized in that being positioned between first electrode (11) and second electrode (12) electrolyte (13) is arranged, dye sensitizing agent (14) and adhesion are formed on the nano crystal semiconductor (15) on second electrode, described second electrode (12) is made of transparent substrates (121) and the conductive layer (122) that is formed on the transparent substrates, described conductive layer (122) is cut apart source electrode (1222) and the drain electrode (1223) that is formed on insulated trenches (1221) both sides by insulated trenches (1221), and described nano crystal semiconductor (15) covers insulated trenches (1221), source electrode (1222) and drain electrode (1223).
2. dye-sensitized optotransistor according to claim 1 is characterized in that described nano crystal semiconductor is the titanium dioxide nanocrystalline particle.
3. dye-sensitized optotransistor according to claim 1, the furrow width that it is characterized in that described insulated trenches (1221) are 10～200 μ m.
4. dye-sensitized optotransistor according to claim 1 is characterized in that the area of the nano crystal semiconductor (15) of described insulated trenches (1221), source electrode (1222) and drain electrode (1223) surface coverage is 5 * 5mm
2
5. preparation method according to the described dye-sensitized optotransistor of claim 1 is characterized in that the concrete steps of this method are:
A. the electroetching of the conductive layer (122) of second electrode (12):
A, the auxiliary electrode (21) of external power (2) is electrically connected with treating electroetching conductive layer (122), the work electrode (22) of external power (2) is needle-like and conductive layer (122) moves and electrically contact;
The voltage of b, modulation external power (2), voltage transfers to 1～80V, and rated current is 0.1～10A, and work electrode (22) is moved along the insulated trenches direction that is about to form, and electroetching forms insulated trenches (1221);
B. the coating of nano crystal semiconductor (15): go up the brilliant semiconductor (15) of coated with nano at second electrode (12) by silk screen printing or spraying method, locate the brilliant semiconductor (15) of coated with nano in described insulated trenches (1221), make the film that forms by nano crystal semiconductor (15) cover insulated trenches (1221) and be positioned at the source electrode (1222) of insulated trenches and arranged on left and right sides and drain (1223);
C. the absorption of dye sensitizing agent (14): second electrode (12) that will be coated with nano crystal semiconductor (15) is immersed in the solution of dye sensitizing agent (14), soaks 12～36 hours;
D. the encapsulation of the injection of electrolyte (13) and dye-sensitized optotransistor (1):
Electrolyte (13) is injected in the cavity that forms between first electrode (11) and second electrode (12), adopts heat-sealing film (16) that first electrode (11) and second electrode (12) are packaged as a whole again.
6. the preparation method of dye-sensitized optotransistor according to claim 5, the furrow width that it is characterized in that described insulated trenches (1221) is 10～200 μ m.
7. the preparation method of dye-sensitized optotransistor according to claim 5 is characterized in that the area of the nano crystal semiconductor (15) of described insulated trenches (1221), source electrode (1222) and drain electrode (1223) surface coverage is 5 * 5mm
2
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| CN200910055090.3A CN101609869B (en) | 2009-07-21 | 2009-07-21 | Dye-sensitized optotransistor and preparation method thereof |
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| CN101996772B (en) * | 2010-09-28 | 2011-12-21 | 彩虹集团公司 | Preparation method of tubular dye-sensitized solar cell |
| CN102683032B (en) * | 2011-06-27 | 2014-05-14 | 河南理工大学 | Preparation of foliated titanium dioxide nano array thin film electrode and application of foliated titanium dioxide nano array thin film electrode in dye sensitized solar cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350334A (en) * | 2001-12-06 | 2002-05-22 | 北京大学 | Solar cell electrode of nanometer crystal film and its prepn |
| CN1624935A (en) * | 2003-12-05 | 2005-06-08 | 鸿富锦精密工业（深圳）有限公司 | Dye sensitized solar batter and its electrode |
| US20070151601A1 (en) * | 2005-12-29 | 2007-07-05 | Won Cheol Jung | Semiconductor electrode using carbon nanotube, preparation method thereof, and solar cell comprising the same |
| EP1870913A2 (en) * | 2006-06-19 | 2007-12-26 | Samsung Electronics Co., Ltd. | Method for modifying surface of counter electrode and surface-modified counter electrode |
| CN101192628A (en) * | 2006-11-30 | 2008-06-04 | 比亚迪股份有限公司 | Semi-conductor electrode and method for making and solar cell containing the semiconductor electrode |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350334A (en) * | 2001-12-06 | 2002-05-22 | 北京大学 | Solar cell electrode of nanometer crystal film and its prepn |
| CN1624935A (en) * | 2003-12-05 | 2005-06-08 | 鸿富锦精密工业（深圳）有限公司 | Dye sensitized solar batter and its electrode |
| US20070151601A1 (en) * | 2005-12-29 | 2007-07-05 | Won Cheol Jung | Semiconductor electrode using carbon nanotube, preparation method thereof, and solar cell comprising the same |
| EP1870913A2 (en) * | 2006-06-19 | 2007-12-26 | Samsung Electronics Co., Ltd. | Method for modifying surface of counter electrode and surface-modified counter electrode |
| CN101192628A (en) * | 2006-11-30 | 2008-06-04 | 比亚迪股份有限公司 | Semi-conductor electrode and method for making and solar cell containing the semiconductor electrode |
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