CN111048428A - Method for manufacturing implantable medical device - Google Patents
Method for manufacturing implantable medical device Download PDFInfo
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- CN111048428A CN111048428A CN201911211784.1A CN201911211784A CN111048428A CN 111048428 A CN111048428 A CN 111048428A CN 201911211784 A CN201911211784 A CN 201911211784A CN 111048428 A CN111048428 A CN 111048428A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8121—Applying energy for connecting using a reflow oven
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
The invention provides a method for manufacturing an implantable medical device, comprising the following steps: providing an implantable package substrate having a plurality of first pads; providing an integrated circuit board, wherein one surface of the integrated circuit board to be connected with a packaging substrate is provided with a plurality of second bonding pads corresponding to the first bonding pads, and the second bonding pads are implanted with solder balls; printing solder paste on the first bonding pad, and then attaching the integrated circuit board to the first bonding pad so that the solder paste is contacted with the solder balls and the orthographic projection of the second bonding pad on the packaging substrate falls into the first bonding pad; connecting the integrated circuit board and the packaging substrate together by adopting a high-purity nitrogen reflow soldering technology; wherein the time that the welding temperature exceeds the liquidus line of the solder paste is 30-90s, the highest welding temperature is 235-265 ℃, and the nitrogen purity of the high-purity nitrogen is not lower than 99.8 percent. The manufacturing method of the invention can improve the welding strength of the implanted packaging substrate and the integrated circuit board, does not damage chips and the like on the integrated circuit board, and prolongs the service life of the implanted medical device.
Description
Technical Field
The invention belongs to the technical field of medical devices, and particularly relates to a manufacturing method of an implantable medical device.
Background
Implantable medical devices are now widely used because they can effectively treat diseases and prolong the life of patients. The connection between the implanted packaging substrate and the integrated circuit board is one of the key technologies for preparing the implanted medical device, and the connection strength, stability and reliability of the two directly influence the service life of the implanted medical device.
At present, the conventional packaging substrate and the integrated circuit board at home and abroad are connected by reflow soldering, but because the bonding pads of the implanted packaging substrate are all made of high-temperature-resistant conductive materials (such as titanium, platinum, iridium, palladium, niobium, tantalum and the like or alloys thereof) with biocompatibility, the performance is stable; if the existing reflow soldering technology is applied to the connection between the implanted packaging substrate and the integrated circuit board, the problems of low connection strength, more cracks, easy falling and the like are easy to occur. Therefore, there is a need for a method for connecting an implantable package substrate and an integrated circuit board for an implantable medical device.
Disclosure of Invention
In view of this, the present invention provides a method for manufacturing an implantable medical device, which prints solder paste on a first pad of an implantable package substrate, and uses a specific high-purity nitrogen reflow soldering process to solder the implantable package substrate and an integrated circuit board, thereby improving soldering strength between the implantable package substrate and the integrated circuit board, not affecting a non-soldering area of the integrated circuit board, and prolonging the service life of the implantable medical device.
The invention provides a method for manufacturing an implantable medical device, comprising the following steps:
providing an implanted packaging substrate, wherein the surface of the packaging substrate is provided with a plurality of first bonding pads arranged at intervals;
providing an integrated circuit board, wherein one side of the integrated circuit board to be connected with the packaging substrate is provided with a plurality of second bonding pads corresponding to the first bonding pads, and the second bonding pads are implanted with solder balls;
printing solder paste on the first bonding pad; the integrated circuit board is attached to a packaging substrate printed with the solder paste, so that the solder paste is in contact with the corresponding solder balls, and the orthographic projection of the second bonding pad on the packaging substrate falls into the first bonding pad;
connecting the integrated circuit board and the packaging substrate together by adopting a high-purity nitrogen reflow soldering technology to obtain an implanted medical device; in the process of the high-purity nitrogen reflow soldering, the time that the soldering temperature exceeds the liquidus line of the solder paste is 30-90s, the highest soldering temperature is 235-265 ℃, and the nitrogen purity of the high-purity nitrogen is not lower than 99.8%.
Wherein, in the process of the high-purity nitrogen reflow soldering, the heating rate of the soldering temperature is 0.5-4 ℃/s.
Wherein, in the process of the high-purity nitrogen reflow soldering, the cooling rate is controlled to be 0.5-8 ℃/s.
The tin paste is lead-free high-temperature cleaning-free tin paste, the particle size of tin powder of the tin paste is 10-25 mu m, and soldering flux is added into the tin paste.
Further, the solder paste is SnAgCu series solder paste with 86-90% of metal element content.
Wherein the soldering flux is selected from one or more of SF64, SF36, NC5070, SURF 20 and TACLUX 025.
Wherein the mass of the soldering flux is 5-15% of the mass of the solder paste.
Wherein, the solder ball is made of tin, gold or alloy thereof; the size of the solder ball does not exceed the size of the first pad. Further preferably, the size of the solder ball is 0.01-1 mm.
Preferably, the projection of the first bonding pads on the package substrate is circular, the diameter of the first bonding pads is 0.05-2mm, and the distance between the first bonding pads is 0.1-5 mm.
The manufacturing method provided by the invention adopts a specific high-purity nitrogen reflow soldering technology, can connect the integrated circuit board and the packaging substrate together, ensures that the integrated circuit board and the implanted packaging substrate have high connection strength and good reliability, are not easy to crack, can meet the long-term implantation stability and service life of an implanted device, and simultaneously can not influence the quality of the integrated circuit board (such as not damaging a chip).
Drawings
In order to more clearly illustrate the technical solution in the embodiment of the present invention, the drawings required to be used in the embodiment of the present invention will be described below.
FIG. 1 is a process flow diagram of a method of manufacturing an implantable medical device in an embodiment of the invention;
fig. 2 is a schematic structural diagram of an implantable package substrate according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of an integrated circuit board according to an embodiment of the present invention;
FIG. 4 is a schematic view of the package substrate of FIG. 2 after solder paste is printed thereon;
fig. 5 is a schematic structural view of the integrated circuit board implanted with solder balls and the package substrate printed with solder paste after being bonded.
Reference numerals for the main elements:
the packaging structure comprises an implanted packaging substrate-1, a first bonding pad-11, a conductive column-12, a solder paste-13, an integrated circuit board-2, a second bonding pad-21, a solder ball-22, a chip-23 and an electronic component-24.
Detailed Description
The following is a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements are also considered to be within the scope of the present invention.
Referring to fig. 1, fig. 1 is a flow chart illustrating a method for manufacturing an implantable medical device according to an embodiment of the present invention. As shown in fig. 1, the manufacturing method of the implantable medical device described in this embodiment includes steps S10, S20, S30, S40, and S50.
S10, referring to fig. 2, an implantable package substrate 1 is provided, in which the package substrate 1 has a plurality of first pads 11 disposed at intervals on a surface thereof.
In the embodiment of the present invention, the implantable package substrate 1 is a cylinder, and the cross section thereof is circular. This prevents the surface of the package substrate 1 from being sharp and injuring organs in the human body. In other embodiments, the implantable package 10 may have other shapes, such as a triangle, a quadrangle, a polygon, etc., which is not limited in this application. Optionally, the thickness of the implantable package substrate 1 is 0.1-0.5mm, and the cross-sectional dimension is 6-15mm (when the implantable package substrate is cylindrical, the cross-sectional dimension refers to the diameter of the cross-sectional circle).
The spacing and arrangement of the first pads 11 on the implantable package substrate 1 preferably coincide with the spacing and arrangement of the second pads 21 of the integrated circuit board 2, which facilitates mounting therebetween. The first pad 11 is generally fabricated by printing paste, or electroplating or electroless plating. Alternatively, each first pad 11 is protruded on the upper and lower surfaces of the package substrate 1. The pitch of the first pads 11 is typically 0.1-5 mm. Preferably, the projection of the first pad 11 on the package substrate 1 is circular, the diameter of the first pad 11 is generally 0.05-2mm, and the size of the first pad 11 is greater than or equal to the diameter of the second pad 21 of the integrated circuit board 2.
Alternatively, the implantable package substrate 1 in step S10 can be fabricated by the following steps S101-S103.
Step S101: a first substrate 10 having a plurality of through holes is provided.
The first substrate 10 may be a ceramic substrate. Alumina or zirconia is generally used as the ceramic substrate, but alumina ceramic green sheets having a purity of 99% or more are generally preferred in order to ensure mechanical strength and long-term implantation requirements. A through hole (not shown in fig. 2) penetrates through the thickness direction of the first substrate 10.
Step S102: as shown in fig. 2, each via hole is filled with a conductive paste and subjected to a sintering process to form a conductive post 12 at the via hole.
The via hole of the first substrate 10 may be filled with a conductive paste by a screen printing method. The conductive paste used is typically platinum, titanium, iridium, palladium, niobium and tantalum or alloys thereof which meet biocompatibility; gold cannot be used because long-term implantation of gold can cause electromigration, which significantly shortens the lifetime of the implanted device. Preferably, the filled conductive paste is a high-stability platinum paste; and the purity of the platinum after high-temperature sintering is required to be ensured to be more than 99%. Subsequently, the first substrate 10 filled with the conductive paste is subjected to high-temperature sintering. The sintering condition can be sintering for 40-80 min at 1600-2100 ℃. After sintering, conductive pillars 12 are formed where the conductive paste was originally filled. In other embodiments of the present invention, the conductive pillar 12 may be formed by a damascene technique, a magnetron sputtering technique, a thermal evaporation technique, or the like.
Step S103: first pads 11 are formed on the upper and lower surfaces of each conductive post 12, as shown in fig. 2.
The first pads 11 may be formed on the upper and lower surfaces of the conductive pillars 12 exposed outside the via holes by a magnetron sputtering technique. The diameter of the first pad 11 is larger than the diameter of the through hole, that is, larger than the diameter of the conductive pillar 12. Thus, the first pads 11 protrude from the upper and lower surfaces of the first substrate 10, and are fixed on the surface of the first substrate 12 at the periphery of the conductive posts 11. The presence of the first bonding pad 11 may help to increase the connection area of the subsequent implantable package substrate and the implantable electrode. The first bonding pad 11 is made of a biocompatible conductive material, and may be independently selected from one or more of gold, platinum, titanium, iridium, palladium, niobium, tantalum, and alloys thereof. The material of the first pad 11 may be the same as or different from the conductive paste. In another embodiment of the present invention, the first pad 11 may be formed by a magnetron sputtering technique, a thermal evaporation technique, a screen printing technique, or the like.
S20, referring to fig. 3, providing an integrated circuit board 2, wherein a plurality of second pads 21 corresponding to the first pads 11 are disposed on a surface of the integrated circuit board 2 to be connected to the package substrate 1, and solder balls 22 are implanted on the second pads 21.
The integrated circuit board 2 can be manufactured according to the requirements of an implanted device and the chip design wiring requirements, and the integrated circuit board 2 is generally a multilayer circuit board with 1-8 layers; and each layer of plate can be mutually conducted and insulated according to the chip design, and the conducting connection metal is generally copper, tin or gold alloy.
As shown in fig. 3, in an embodiment of the present invention, the integrated circuit board 2 includes a second substrate 20, the second substrate has a first surface 201 and a second surface 202 that are disposed opposite to each other, the first surface 201 is provided with a chip 23 and an electronic component 24, the second surface 202 is provided with a plurality of second pads 21, and a solder ball 22 is implanted on a surface of each second pad 21. Here, the "second surface 202" is a surface of the integrated circuit board 2 to be connected to the package substrate 1. The "second substrate" may be a PCB board.
The electronic component 24 may be a capacitor (C), a resistor (R), a diode (D), or the like. The chip 23 may be flip-chip bonded to the integrated circuit board 2 via a chip pad, and then the other side (i.e., the second surface 202) of the integrated circuit board 2 is also flip-chip bonded to the implantable package substrate 1. Taking the bonding of the chip as an example, "flip chip bonding" means that the chip pads are located below the chip 23, i.e., the chip pads on the chip 23 are directed toward the first surface 201 of the integrated circuit board 2. In other embodiments of the present invention, the chip 23 may be bonded in a normal bonding manner.
Preferably, the solder ball 22 is made of tin, gold or alloy thereof; the size of the solder ball 22 does not exceed the size of the first pad 11. Further preferably, the size of the solder ball 22 is 0.01-1 mm.
The material of the second bonding pad 21 is generally one or more of copper, aluminum, tin, silver and their alloys. The size of the second pad 21 is not larger than the size of the first pad 11.
S30, the solder paste 13 is printed on the first pads 11.
The package substrate 1 printed with the solder paste 13 is shown in fig. 4. The solder paste 13 is lead-free high-temperature cleaning-free solder paste, and the particle size of solder powder of the solder paste is 10-25 mu m; the solder paste 13 is added with flux.
In the invention, the solder paste 13 with the soldering flux added in a proper amount is printed on the first bonding pad 11 of the implanted packaging substrate 1, so that the bonding pads corresponding to the implanted packaging substrate 1 and the integrated circuit board 2 can be ensured to achieve good electric connection and have enough high mechanical strength during the specific high-purity nitrogen reflow soldering. The solder paste 13 may be printed by a full-automatic solder paste printer, a semi-automatic solder paste printer, or a manual solder paste printer. To improve the efficiency and accuracy of printing solder paste, fully automatic solder paste printing is preferred for implantable medical devices.
The lead-free high-temperature cleaning-free solder paste with the particle size of 10-25 mu m can ensure high connection strength between the implanted packaging substrate and the integrated circuit board, and meets the long-term implantation requirement of the implanted medical device. Optionally, the tin powder particle size of the tin paste is 10-15 μm, or 15-25 μm. Further, the solder paste is SnAgCu series solder paste with 86-90% of metal element content. Specifically, SAC305(Sn96.5/Ag3/Cu0.5), SAC307(Sn99/Ag0.3/Cu0.7) solder paste, or the like can be used.
In the invention, after the soldering flux is added into the solder paste, the solder paste can be helped to fully wet the first bonding pad, and the connection strength between the implanted packaging substrate and the integrated circuit board can be improved. Wherein the soldering flux is selected from one or more of SF64, SF36, NC5070, SURF 20 and TACLUX 025. Optionally, the mass of the flux is 5-15% of the mass of the solder paste.
Preferably, the flux is SF 64. The soldering flux SF64 can make the connection strength between the integrated circuit board 2 and the package substrate 1 higher, and better meet the requirements of implantable medical devices.
S40, as shown in fig. 5, the integrated circuit board 2 is bonded to the package substrate 1 on which the solder paste 13 is printed, the solder paste 13 is brought into contact with the corresponding solder ball 22, and the orthographic projection of the second land 21 on the package substrate 1 is made to fall into the first land 11.
The integrated circuit 2 board can be accurately mounted to the surface of the implantable package substrate 1 printed with the solder paste 13 using an automatic mounter or manually, it is necessary to ensure that each second pad 21 of the integrated circuit board 2 is aligned with one first pad 11 on the implantable package substrate 1, otherwise the final implantable medical device may not work properly. In order to improve mounting efficiency, an automatic mounter is preferably used. The bonded device is schematically shown in fig. 5. Obviously, the second pads 21 (or solder balls 22) are in one-to-one correspondence with the first pads 21. As can be seen from the description of step S40 that the orthographic projection of the second pads 21 on the package substrate 1 falls within the first pads 11, the size of the second pads 21 is not larger than the size of the first pads 11, which can facilitate the mounting of the integrated circuit board 2.
S50, connecting the integrated circuit board 2 and the packaging substrate 1 together by adopting a high-purity nitrogen reflow soldering technology to obtain an implanted medical device; in the process of the high-purity nitrogen reflow soldering, the time that the soldering temperature exceeds the liquidus line of the solder paste is 30-90s, the highest soldering temperature is 235-265 ℃, and the nitrogen purity of the high-purity nitrogen is not lower than 99.8%.
Typically, conventional reflow temperatures are 210-. In the process of the high-purity nitrogen reflow soldering, the highest soldering temperature is 2-15% higher than that of the conventional reflow soldering, and the soldering temperature is controlled to ensure that the integrated circuit board is not damaged and the connection strength of the integrated circuit board and the implanted packaging substrate is not reduced, so that the service life requirement of the implanted medical device is met. Preferably, the maximum welding temperature of the present invention is 250-265 ℃.
In the embodiment of the invention, in the process of the high-purity nitrogen reflow soldering, the time that the soldering temperature exceeds the liquidus line of the solder paste is controlled to be 30-90 s. Wherein, the solder paste liquidus refers to the corresponding temperature line when the solder paste is melted; the time that the welding temperature exceeds the liquidus line of the solder paste refers to the time that the solder paste starts to melt, reaches the highest welding temperature and then is reduced to the temperature reaching the melting temperature of the solder paste; the "soldering" is usually performed from the beginning of the softening of the solder paste. If the time for the soldering temperature to exceed the liquidus line of the solder paste is too short, the solder paste and the solder ball are not sufficiently melted, and if the time is too long, excessive metal compounds are formed at the solder joint, thereby reducing the reliability of the solder joint. Preferably, in the high-purity nitrogen reflow soldering process, the time for the soldering temperature to exceed the liquidus line of the solder paste is 50-80 s.
In the invention, high-purity nitrogen is adopted in the welding process of the integrated circuit board and the packaging substrate, and if the purity of the nitrogen is lower, the solder paste can not effectively wet the first bonding pad, so that the welding strength between the integrated circuit board and the packaging substrate is low or the welding can not be carried out. Preferably, the nitrogen purity of the high-purity nitrogen gas is not less than 99.9%. Further, the high-purity nitrogen is nitrogen with the purity of 100%, or nitrogen containing 0.01% -0.1% of oxygen.
Preferably, the heating rate of the soldering temperature of the high-purity nitrogen reflow soldering is 0.5-4 ℃/s. The heating rate can reduce the defects during welding to the maximum extent and improve the service life and reliability of welding. If the temperature rises too fast, thermal shock can be generated, so that electronic components and the like on the integrated circuit board are deformed or damaged, and the solvent in the tin paste can volatilize too fast to splash metal components to generate tin beads due to too fast temperature rise; if the temperature is too slow, the solvent in the solder paste is not sufficiently volatilized, resulting in low connection strength after soldering.
Preferably, the cooling rate is controlled to be 0.5-8 ℃/s during the high purity nitrogen reflow. If the cooling is too fast, cracks are formed at the welding position, and the early failure is caused; if the cooling is too slow, crystal grains at the welding point grow up, and the fatigue resistance is poor.
The welding shear strength of the implantable medical device obtained by the manufacturing method is 500-5000 g. Preferably 800-.
In the manufacturing method of the implantable medical device provided by the embodiment of the invention, the integrated circuit board and the packaging substrate can be connected together by adopting a specific high-purity nitrogen reflow soldering technology, so that the integrated circuit board and the implantable packaging substrate are high in connection strength and good in reliability and are not easy to crack, the long-term implantation stability and the service life of the implantable device can be met, and the quality of the integrated circuit board (such as a chip and the like) is not influenced.
The foregoing is illustrative of the present invention and it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and are intended to be within the scope of the invention.
Claims (10)
1. A method of manufacturing an implantable medical device, comprising:
providing an implanted packaging substrate, wherein the surface of the packaging substrate is provided with a plurality of first bonding pads arranged at intervals;
providing an integrated circuit board, wherein one side of the integrated circuit board to be connected with the packaging substrate is provided with a plurality of second bonding pads corresponding to the first bonding pads, and the second bonding pads are implanted with solder balls;
printing solder paste on the first bonding pad; the integrated circuit board is attached to a packaging substrate printed with the solder paste, so that the solder paste is in contact with the corresponding solder balls, and the orthographic projection of the second bonding pad on the packaging substrate falls into the first bonding pad;
connecting the integrated circuit board and the packaging substrate together by adopting a high-purity nitrogen reflow soldering technology to obtain an implanted medical device; in the process of the high-purity nitrogen reflow soldering, the time that the soldering temperature exceeds the liquidus line of the solder paste is 30-90s, the highest soldering temperature is 235-265 ℃, and the nitrogen purity of the high-purity nitrogen is not lower than 99.8%.
2. The manufacturing method according to claim 1, wherein a temperature rise rate of the soldering temperature during the high purity nitrogen gas reflow soldering is 0.5 to 4 ℃/s.
3. The manufacturing method according to claim 2, wherein a cooling rate is controlled to be 0.5 to 8 ℃/s during the high purity nitrogen gas reflow.
4. The method according to claim 1, wherein the high-purity nitrogen gas is 100% pure nitrogen gas or nitrogen gas containing 0.01% to 0.1% oxygen gas.
5. The manufacturing method according to any one of claims 1 to 4, wherein the solder paste is a lead-free high-temperature no-clean solder paste having a solder powder particle size of 10 to 25 μm; the solder paste is added with soldering flux.
6. The manufacturing method according to claim 5, wherein the solder paste is a SnAgCu series solder paste having a metal element content of 86 to 90%.
7. The method of manufacturing of claim 5, wherein the flux is selected from one or more of SF64, SF36, NC5070, SURF 20, and TACLUX 025.
8. The manufacturing method of claim 5, wherein the mass of the flux is 5-15% of the mass of the solder paste.
9. The manufacturing method according to claim 1, wherein the solder ball is made of tin, gold or an alloy thereof; the size of the solder ball does not exceed the size of the first pad.
10. The manufacturing method according to claim 9, wherein the size of the solder ball is 0.01 to 1 mm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112752419A (en) * | 2020-12-23 | 2021-05-04 | 浙江清华柔性电子技术研究院 | Implanted flexible electronic device and preparation method thereof |
| CN113855032A (en) * | 2021-09-13 | 2021-12-31 | 江西脑虎科技有限公司 | Preparation method of brain electrode device and brain electrode device |
| CN114191706A (en) * | 2021-12-30 | 2022-03-18 | 江苏海莱新创医疗科技有限公司 | Method for manufacturing electrode patch for tumor electric field treatment |
| CN114406515A (en) * | 2022-01-28 | 2022-04-29 | 中国科学院上海微系统与信息技术研究所 | Welding method of brain electrode device and brain electrode device |
| WO2023116714A1 (en) * | 2021-12-22 | 2023-06-29 | 江苏海莱新创医疗科技有限公司 | Method for manufacturing electrode patch for tumor-treating fields |
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Cited By (6)
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| CN112752419A (en) * | 2020-12-23 | 2021-05-04 | 浙江清华柔性电子技术研究院 | Implanted flexible electronic device and preparation method thereof |
| CN112752419B (en) * | 2020-12-23 | 2023-03-10 | 浙江清华柔性电子技术研究院 | Implanted flexible electronic device and preparation method thereof |
| CN113855032A (en) * | 2021-09-13 | 2021-12-31 | 江西脑虎科技有限公司 | Preparation method of brain electrode device and brain electrode device |
| WO2023116714A1 (en) * | 2021-12-22 | 2023-06-29 | 江苏海莱新创医疗科技有限公司 | Method for manufacturing electrode patch for tumor-treating fields |
| CN114191706A (en) * | 2021-12-30 | 2022-03-18 | 江苏海莱新创医疗科技有限公司 | Method for manufacturing electrode patch for tumor electric field treatment |
| CN114406515A (en) * | 2022-01-28 | 2022-04-29 | 中国科学院上海微系统与信息技术研究所 | Welding method of brain electrode device and brain electrode device |
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| CN111048428B (en) | 2022-02-22 |
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