CN111045291B - Foreign matter detection device, exposure device, and method for manufacturing article - Google Patents
Foreign matter detection device, exposure device, and method for manufacturing article Download PDFInfo
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- CN111045291B CN111045291B CN201910951717.7A CN201910951717A CN111045291B CN 111045291 B CN111045291 B CN 111045291B CN 201910951717 A CN201910951717 A CN 201910951717A CN 111045291 B CN111045291 B CN 111045291B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
- G01N2021/945—Liquid or solid deposits of macroscopic size on surfaces, e.g. drops, films, or clustered contaminants
Abstract
The invention provides a foreign matter detection device, an exposure device and a method for manufacturing an article. The foreign matter detection device detects a foreign matter on a transparent member, and is characterized by comprising: an irradiation unit for obliquely irradiating the transparent member with light; a light receiving unit for detecting scattered light from a foreign object on the transparent member irradiated with light by the irradiated unit; and a processing unit for performing a process of detecting a foreign object, the process including: a first mode in which the relative position between the irradiation unit and the light receiving unit is set to a first state in which the distance between the irradiation unit and the light receiving unit is a first distance, and the foreign matter is detected based on the distribution of scattered light detected by the light receiving unit in the first state; and a second mode in which the relative position between the irradiation unit and the light receiving unit is set to a second state in which the distance between the irradiation unit and the light receiving unit is a second distance longer than the first distance, and the foreign matter is detected based on the distribution of scattered light detected by the light receiving unit in the second state.
Description
Technical Field
The present invention relates to a foreign matter detection device, an exposure device, and a method for manufacturing an article.
Background
Semiconductor devices and liquid crystal display devices are manufactured through an exposure process in which a fine pattern formed on a mask (original plate) is transferred to a substrate (glass substrate or the like). In this exposure step, when foreign matter such as dust, dirt, or damage is present on the mask or the substrate, defects occur in the pattern transferred to the substrate. Therefore, in general, before the exposure process is performed, a foreign matter on the mask and the substrate is detected (whether or not a foreign matter is present is checked) using a foreign matter detection device.
The foreign matter detection device mainly includes an irradiation unit that irradiates light obliquely to a mask or a substrate (detection target object), and a light receiving unit that detects light (reflected light or scattered light) from a foreign matter present in an irradiation region. Here, the light receiving portion is disposed so as not to detect regular reflection light from the upper surfaces of the mask and the substrate and light refracted or reflected by the lower surfaces of the mask and the substrate. Techniques related to such foreign matter detection devices are proposed in japanese patent application laid-open publication No. 2010-107471, japanese patent application laid-open publication No. 4157037, and japanese patent application laid-open publication No. 2008-115031.
Japanese patent application laid-open No. 2010-107471 discloses a technique of suppressing erroneous detection of foreign matter by providing a light shielding plate between an irradiation portion and a light receiving portion. The light shielding plate prevents light from the irradiation section from passing through the detection object side, prevents reflected light from the upper surface of the detection object from passing through the light receiving section side, and prevents reflected light from the lower surface of the detection object from passing through the light receiving section side.
Japanese patent No. 4157037 discloses the following technique: in a foreign matter detection device having an irradiation section for irradiating a detection object with linear light and a light receiving section including a line sensor (camera), foreign matter present on the upper surface and the lower surface of the detection object is detected by changing the angle of the irradiation section or the light receiving section.
Japanese patent application laid-open No. 2008-115031 discloses a technique for inspecting a cut surface of a transparent plate-like object to be inspected, wherein the irradiation unit and the light receiving unit are moved parallel to the cut surface while detecting reflected light from the cut surface (whether or not the reflected light is detected), and the cut surface is inspected.
Disclosure of Invention
In the conventional foreign matter detection device, for example, a light shielding plate is used to prevent false detection of foreign matter caused by detection of diffracted light generated by a pattern of a mask by a light receiving portion. However, when the object to be detected is a transparent member having a thickness (hereinafter referred to as a transparent member) and the side surface of the transparent member is a rough surface, light illuminating the transparent member enters the inside, and diffracted light is generated on the side surface (rough surface) of the transparent member. Since the diffracted light from the side surface of the transparent member becomes light that illuminates the pattern formed on the transparent member (that is, the side surface of the transparent member functions as a secondary light source) and is detected by the light receiving portion, noise based on the diffracted light is erroneously detected as a foreign substance.
The invention provides a foreign matter detection device which is beneficial to detecting foreign matters on a transparent component.
A foreign matter detection device according to an aspect of the present invention is a foreign matter detection device for detecting a foreign matter on a transparent member, comprising: an irradiation unit that irradiates light obliquely to the transparent member; a light receiving unit configured to detect scattered light from a foreign object on the transparent member irradiated with the light by the irradiation unit; and a processing unit configured to perform a process of detecting the foreign matter, the process including: a first mode in which a relative position between the irradiation unit and the light receiving unit is set to a first state in which a distance between the irradiation unit and the light receiving unit is a first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the first state; and a second mode in which a relative position between the irradiation unit and the light receiving unit is set to a second state in which a distance between the irradiation unit and the light receiving unit is a second distance longer than the first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the second state.
A foreign matter detection device according to another aspect of the present invention is a foreign matter detection device for detecting a foreign matter on a transparent member, comprising: an irradiation unit that irradiates light obliquely to the transparent member; a light receiving unit configured to detect scattered light from a foreign object on the transparent member irradiated with the light by the irradiation unit; and a processing unit configured to perform a process of detecting the foreign matter, the process including: a first mode in which a relative position between the irradiation unit and the light receiving unit is set to a first state in which a distance between an intersection point of an optical axis of the irradiation unit and a surface of the transparent member and an intersection point of an optical axis of the light receiving unit and a surface of the transparent member is a first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the first state; and a second mode in which a relative position between the irradiation unit and the light receiving unit is set to a second state in which a distance between an intersection point of an optical axis of the irradiation unit and a surface of the transparent member and an intersection point of an optical axis of the light receiving unit and a surface of the transparent member is a second distance longer than the first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the second state.
An exposure apparatus according to still another aspect of the present invention is an exposure apparatus for exposing a substrate, comprising: a projection optical system that projects a pattern of a mask onto the substrate; and a foreign matter detection device that detects a foreign matter on the mask, the mask being constituted by a transparent member on which the pattern is formed, the foreign matter detection device including the above-described foreign matter detection device.
A method for manufacturing an article according to still another aspect of the present invention is characterized by comprising: exposing the substrate using the exposure apparatus; developing the exposed substrate; and a step of manufacturing an article from the developed substrate.
Further objects and other aspects of the present invention will become more apparent from the following description of preferred embodiments with reference to the accompanying drawings.
According to the present invention, it is possible to provide a foreign matter detection device that is advantageous for detecting a foreign matter on a transparent member, for example.
Drawings
Fig. 1 is a schematic diagram showing a configuration of a foreign matter detection device according to a first embodiment of the present invention.
Fig. 2 is a diagram for explaining the influence on the light receiving section caused by the difference in the characteristics of the side surfaces of the transparent flat plate.
Fig. 3 is a diagram for explaining the influence on the light receiving section caused by the difference in the characteristics of the side surfaces of the transparent flat plate.
Fig. 4 is a diagram showing an example of the relative positions of the irradiation section and the light receiving section of the foreign matter detection device shown in fig. 1.
Fig. 5A to 5C are diagrams for explaining the foreign matter detection process in the present embodiment.
Fig. 6 is a schematic diagram showing the configuration of a foreign matter detection device according to a second embodiment of the present invention.
Fig. 7 is a schematic diagram showing a configuration of an exposure apparatus as an aspect of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description thereof is omitted.
< first embodiment >
Fig. 1 is a schematic diagram showing a configuration of a foreign matter detection device 100 according to a first embodiment of the present invention. The foreign matter detection device 100 is a device that detects a foreign matter on a foreign matter detection target. As shown in fig. 1, the foreign matter detection device 100 includes a mounting table 6, an irradiation unit 10, a light receiving unit 11, a processing unit 12, a generation unit 13, and a driving unit 30.
In the present embodiment, the foreign object inspection object is a transparent member (transparent member), for example, a relatively thick transparent flat plate 3 having a constant thickness. In order to perform foreign matter detection in a foreign matter inspection target area on the upper surface (surface) of the transparent flat plate 3, the transparent flat plate 3 is held on the mounting table 6. In the present embodiment, the foreign matter detection device 100 performs foreign matter detection on the transparent flat plate while moving the mounting table 6 holding the transparent flat plate 3 in the Y direction, but is not limited thereto. For example, the detection of foreign matter on the transparent flat plate (on the transparent member) may be performed while moving a mounting table (not shown) holding the irradiation unit 10 and the light receiving unit 11 in the Y direction.
The irradiation unit 10 includes a light source 1 for emitting light and an irradiation lens 2, and irradiates the transparent flat plate 3 with the light obliquely. The light from the irradiation section 10 is incident on the foreign matter detection target region on the upper surface of the transparent flat plate 3 at an angle (in a direction inclined from the normal line). In order to detect scattered light from the foreign matter on the transparent flat plate by the light receiving unit 11, the irradiation unit 10 may include an angle adjustment unit that adjusts the angle of the light incident on the transparent flat plate 3.
The light receiving unit 11 includes a light receiving lens 4 and a detector 5, and receives light scattered by a foreign object on a transparent flat plate irradiated with light by the irradiation unit 10 (scattered light). Scattered light from a foreign object on the transparent flat plate is incident on the detector 5 through the light receiving lens 4. The light receiving unit 11 includes an angle adjustment unit that adjusts the angle of the light receiving unit 11 with respect to the transparent flat plate 3 so that regular reflection light from the upper surface of the transparent flat plate 3 does not enter the detector 5.
The processing unit 12 is configured by a computer including a CPU, a memory, and the like, for example, and controls the respective parts of the foreign matter detection device 100 in a unified manner according to a program stored in the memory unit, thereby operating the foreign matter detection device 100. In the present embodiment, the processing unit 12 performs a process of detecting a foreign matter on the transparent flat plate (a foreign matter detection process).
The driving unit 30 moves the irradiation unit 10 in a direction (Y direction) parallel to the surface of the transparent flat plate 3. Since any technique known in the art can be applied to the driving section 30, a detailed description of the structure and the like thereof is omitted.
Here, with reference to fig. 2 and 3, the influence on the light receiving portion 11 due to the difference in surface processing of the side surface 3a of the transparent flat plate 3, that is, the difference in characteristics of the side surface 3a of the transparent flat plate 3 will be described. Fig. 2 shows a case where the side surface 3a of the transparent flat plate 3 is a polished surface, and fig. 3 shows a case where the side surface 3a of the transparent flat plate 3 is a rough polished surface. Most of the light irradiated to the transparent flat plate 3 by the irradiation section 10 is specularly reflected on the upper surface of the transparent flat plate 3, but a part enters the inside of the transparent flat plate 3. In the case where the side surface 3a of the transparent flat plate 3 is a polished surface, the light entering the transparent flat plate 3 transmits the side surface 3a of the transparent flat plate 3 as shown in fig. 2, but is reflected by the side surface 3a of the transparent flat plate 3 as shown in fig. 3 when the side surface 3a of the transparent flat plate 3 is a rough polished surface. Thus, when the side surface 3a of the transparent flat plate 3 is a rough surface, the rough surface functions as a secondary light source, and thus the light reflected by the side surface 3a of the transparent flat plate 3 is irradiated with the pattern 8 formed on the lower surface opposite to the upper surface of the transparent flat plate 3. Since the light irradiated to the pattern 8 is reflected by the pattern 8 and is incident on the light receiving portion 11 as light different from the scattered light from the foreign matter on the transparent flat plate, it is erroneously detected as the foreign matter.
In the present embodiment, when the side surface 3a of the transparent flat plate 3 is a rough surface, the driving unit 30 moves the irradiation unit 10 in the Y direction, specifically, in a direction away from the side surface 3a of the transparent flat plate 3. This reduces the light reflected by the side surface 3a of the transparent flat plate 3, and suppresses false detection of foreign matter caused by the light reflected by the side surface 3a of the transparent flat plate 3.
As shown in fig. 4, a case where the relative positions of the irradiation unit 10 and the light receiving unit 11 are ideal is considered. Here, the ideal relative position between the irradiation unit 10 and the light receiving unit 11 is a state where the intersection point of the optical axis of the irradiation unit 10 and the upper surface of the transparent flat plate 3 coincides with the intersection point of the optical axis of the light receiving unit 11 and the upper surface of the transparent flat plate 3. In this case, the intensity distribution LD1 of the light irradiated from the irradiation unit 10 to the transparent flat plate 3 tends to be maximum on the optical axis of the irradiation unit 10 (on the incident optical axis) and to be smaller as it is farther from the optical axis of the irradiation unit 10. This means that the relative positional relationship between the optical axis of the light receiving portion 11 on the transparent flat plate and the illumination region having the intensity distribution changes in the foreign matter detection region due to the different shape of the transparent flat plate 3, and as a result, the detection result of the foreign matter of the same size is deviated.
In the present embodiment, the first mode and the second mode are included as the foreign matter detection process, and the first mode or the second mode is selected according to the characteristics of the side surface 3a of the transparent flat plate 3. In the first mode, the relative position between the irradiation unit 10 and the light receiving unit 11 is set to a first state in which the distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the upper surface of the transparent flat plate 3 (Y direction) is a first distance. Then, the foreign matter is detected based on the distribution of scattered light from the foreign matter on the transparent flat plate detected by the light receiving portion 11 in the first state. In the second mode, the relative position between the irradiation unit 10 and the light receiving unit 11 is set to a second state in which the distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the upper surface of the transparent flat plate 3 (Y direction) is a second distance longer than the first distance. Then, the foreign matter is detected based on the distribution of scattered light from the foreign matter on the transparent flat plate detected by the light receiving portion 11 in this second state. The difference between the first distance and the second distance is small, for example, in the range of 10mm to 20 mm.
The foreign matter detection process in the present embodiment, that is, the first mode and the second mode will be specifically described with reference to fig. 5A, 5B, and 5C. Fig. 5A shows a case where the side surface 3a of the transparent flat plate 3 is a polished surface and the first mode is selected as the foreign matter detection process. Here, as shown in fig. 5A, the state where the relative position of the irradiation unit 10 and the light receiving unit 11 is ideal is set to the first state. The distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the upper surface of the transparent flat plate 3 (Y direction) is set to be the distance between the position where the light source 1 emits light and the position where the detector 5 detects light. As shown in fig. 5A, when the side surface 3a of the transparent flat plate 3 is a polished surface, the side surface 3a of the transparent flat plate 3 does not function as a secondary light source, and thus the intensity variation in the vicinity of the optical axis of the light receiving unit 11 is small. Therefore, in this case, the intensity distribution LD2 is not easily affected by the change in intensity of the light irradiated from the irradiation unit 10 to the transparent flat plate 3, as in the intensity distribution LD1 shown in fig. 4.
Fig. 5B shows a case where the side surface 3a of the transparent flat plate 3 is a rough surface and the first mode is selected as the foreign matter detection process. As shown in fig. 5B, when the side surface 3a of the transparent flat plate 3 is a rough surface, the side surface 3a of the transparent flat plate 3 functions as a secondary light source, and thus, light reflected by the side surface 3a of the transparent flat plate 3 and the pattern 8 is also incident on the light receiving unit 11. In this case, therefore, the intensity distribution LD3 is affected by the change in intensity of the light irradiated from the irradiation unit 10 to the transparent flat plate 3, unlike the intensity distribution LD2 shown in fig. 5, and there is a possibility that the foreign matter is erroneously detected at each position in the foreign matter detection area.
Fig. 5C shows a case where the side surface 3a of the transparent flat plate 3 is a rough surface and the second mode is selected as the foreign matter detection process. In the second mode, the irradiation unit 10 is moved in a direction away from the side surface 3a of the transparent flat plate 3, and as described above, the distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the upper surface of the transparent flat plate 3 (Y direction) is set to be a second distance longer than the first distance. As shown in fig. 5C, by moving the irradiation portion 10 in a direction away from the side surface 3a of the transparent flat plate 3, light advancing to the side surface 3a of the transparent flat plate 3 can be reduced. In this case, therefore, the intensity distribution LD4 is not easily affected by the change in intensity of the light irradiated from the irradiation unit 10 to the transparent flat plate 3, as in the intensity distribution LD2 shown in fig. 5A.
Thus, in the present embodiment, the processing unit 12 acquires information indicating the characteristics of the side surface 3a of the transparent flat plate 3, and selects the first mode as the foreign matter detection processing when the information indicates that the side surface 3a of the transparent flat plate 3 is the polished surface (see fig. 5A). On the other hand, when the information indicating the characteristics of the side surface 3a of the transparent flat plate 3 shows that the side surface 3a of the transparent flat plate 3 is a rough surface, the second mode is selected as the foreign matter detection processing (see fig. 5C). Thus, even when the object to be detected is the transparent flat plate 3 and the side surface 3a of the transparent flat plate 3 is a rough surface, the light reflected by the side surface 3a of the transparent flat plate 3 can be reduced, and thus erroneous detection of the foreign matter by the light can be suppressed. In order to further suppress false detection of foreign matter caused by light reflected by the side surface 3a of the transparent flat plate 3, the foreign matter detection target region in the first mode may be different from the foreign matter detection target region in the second mode. Specifically, in the second mode, the region affected by the light reflected by the side surface 3a of the transparent flat plate 3 may be excluded from the foreign matter detection target region.
In the present embodiment, the first mode and the second mode are set by changing the distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the surface of the transparent flat plate 3, but the present invention is not limited thereto. For example, the first mode and the second mode can also be set by moving the irradiation section 10 in the up-down direction (Z direction) (i.e., changing the distance between the irradiation section 10 and the surface of the transparent flat plate 3 in the vertical direction).
In the present embodiment, the generating unit 13 generates information indicating the characteristics of the side surface 3a of the transparent flat plate 3, and the processing unit 12 acquires the information indicating the characteristics of the side surface 3a of the transparent flat plate 3 generated by the generating unit 13. The generating unit 13 generates information indicating the characteristics of the side surface 3a of the transparent flat plate 3 based on the intensity distribution formed on the transparent flat plate by the light irradiated from the irradiating unit 10 before and after the irradiating unit 10 is moved by the driving unit 30. For example, the generating unit 13 compares the intensity distribution formed on the transparent flat plate when the relative position between the irradiation unit 10 and the light receiving unit 11 is in the first state with the intensity distribution formed on the transparent flat plate when the relative position between the irradiation unit 10 and the light receiving unit 11 is in the second state. Then, when the difference is equal to or less than the threshold value, the generating unit 13 generates information indicating that the side surface 3a of the transparent flat plate 3 is a polished surface, and when the difference is greater than the threshold value, generates information indicating that the side surface 3a of the transparent flat plate 3 is a rough polished surface.
The generating unit 13 may generate information indicating the characteristics of the side surface 3a of the transparent flat plate 3 by comparing the intensity distribution LD1 shown in fig. 4 with the intensity distribution formed on the transparent flat plate when the relative position between the irradiation unit 10 and the light receiving unit 11 is in the first state. In this case, the intensity distribution LD1 shown in fig. 4 needs to be obtained in advance.
In the foreign matter detection device 100, the angle of the irradiation unit 10 and the light receiving unit 11 with respect to the transparent flat plate 3 may be arbitrarily changed according to the characteristics of the side surface 3a of the transparent flat plate 3, so that the influence of the change in the intensity of the light irradiated onto the transparent flat plate 3 may be adjusted.
The processing unit 12 may also have a function of recognizing foreign matters on the transparent flat plate and noise caused by light reflected by the side surface 3a of the transparent flat plate 3 based on the distribution of scattered light detected by the light receiving unit 11 while reciprocating the stage 6 holding the transparent flat plate 3 in the Y direction.
In the present embodiment, a case will be described in which the relative position between the irradiation unit 10 and the light receiving unit 11 is defined by the distance between the irradiation unit 10 and the light receiving unit 11 in the direction parallel to the upper surface of the transparent flat plate 3 (Y direction). However, the relative position of the irradiation unit 10 and the light receiving unit 11 can be defined by the relationship between the optical axis of the irradiation unit 10, the optical axis of the light receiving unit 11, and the upper surface of the transparent flat plate 3. In this case, as the relative position of the irradiation unit 10 and the light receiving unit 11, a state in which the distance between the intersection point of the optical axis of the irradiation unit 10 and the upper surface of the transparent flat plate 3 and the intersection point of the optical axis of the light receiving unit 11 and the upper surface of the transparent flat plate 3 in the direction parallel to the upper surface of the transparent flat plate 3 is a first distance is set to a first state. As the relative position of the irradiation unit 10 and the light receiving unit 11, a state in which the distance between the intersection of the optical axis of the irradiation unit 10 and the upper surface of the transparent flat plate 3 and the intersection of the optical axis of the light receiving unit 11 and the upper surface of the transparent flat plate 3 in the direction parallel to the upper surface of the transparent flat plate 3 is a second distance longer than the first distance is set to a second state. The distance may be expressed as a distance on a surface including the optical axis of the irradiation unit 10 and the optical axis of the light receiving unit 11.
< second embodiment >
Fig. 6 is a schematic diagram showing the configuration of a foreign matter detection device 100 according to a second embodiment of the present invention. The foreign matter detection device 100 in the second embodiment further includes an irradiation control unit 14 that controls the irradiation unit 10. The irradiation unit 10 includes a diaphragm 15, and the diaphragm 15 includes an opening defining a width of light emitted from the light source 1.
In the present embodiment, since the irradiation section 10 includes the aperture 15, it is possible to limit the width of the light emitted from the light source 1, limit the area of the light incident on the side surface 3a (rough surface) of the transparent flat plate 3, and suppress the light reflected by the pattern 8. However, by providing the diaphragm 15, the light quantity of the light irradiated to the transparent flat plate 3 is reduced. Then, the irradiation control unit 14 controls the light quantity of the light emitted from the light source 1 based on the size of the opening of the diaphragm 15. The size of the opening of the aperture 15 is determined by the irradiation control unit 14 based on the thickness of the transparent flat plate 3. This minimizes the influence of light from the side surface 3a (rough surface) of the transparent flat plate 3, and makes the light incident on the light receiving unit 11 only scattered light from a foreign matter. This can suppress false detection of foreign matter due to light reflected by the side surface 3a of the transparent flat plate 3.
< third embodiment >
An exposure apparatus 500 as an aspect of the present invention will be described with reference to fig. 7. The exposure apparatus 500 is a photolithography apparatus for patterning a substrate, which is used in a photolithography process that is a process for manufacturing a semiconductor device or a liquid crystal display device. The exposure apparatus 500 exposes the substrate via a mask (master) and transfers the pattern of the mask to the substrate.
As shown in fig. 7, the exposure apparatus 500 includes an illumination optical system 510, a projection optical system 520, a mask stage 540 that moves while holding a mask 530, a substrate stage 560 that moves while holding a substrate 550, and a foreign matter detection apparatus 100. Further, the exposure apparatus 500 includes a control unit 570, and the control unit 570 is configured by a computer including a CPU, a memory, and the like, and controls the respective portions of the exposure apparatus 500 in a unified manner according to a program stored in the storage unit, thereby operating the exposure apparatus 500.
The illumination optical system 510 is an optical system that illuminates the mask 530 with light from a light source. The mask 530 is composed of a transparent flat plate, and a pattern corresponding to a pattern to be formed on the substrate 550 is formed on a lower surface opposite to an upper surface thereof. The mask 530 is held on the mask stage 540. The above-described foreign matter detection device 100 is applied as a foreign matter detection device that detects a foreign matter present on the upper surface of the mask 530. The foreign matter detection device 100 can suppress false detection of foreign matter and detect foreign matter on a mask with high accuracy.
The substrate 550 is held by the substrate stage 560. The mask 530 and the substrate 550 are disposed at positions (positions of an object plane and an image plane of the projection optical system 520) substantially conjugate optically via the projection optical system 520. The foreign matter detection device 100 described above can also be applied to detection of foreign matter present on a substrate. The projection optical system 520 is an optical system that projects an object onto an image plane. A reflection system, a refraction system, a catadioptric system can be applied to projection optics 520. In the present embodiment, the projection optical system 520 has a predetermined projection magnification, and projects a pattern formed on the mask 530 onto the substrate 550. Then, the mask stage 540 and the substrate stage 560 are scanned in a direction (for example, X direction) parallel to the object plane of the projection optical system 520 at a speed ratio corresponding to the projection magnification of the projection optical system 520. Thereby, the pattern formed on the mask 530 can be transferred to the substrate 550.
< fourth embodiment >
The method for manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as devices (semiconductor devices, magnetic storage media, liquid crystal display devices, and the like), color filters, optical elements, and MEMS, for example. The manufacturing method includes a step of exposing a substrate coated with a photosensitive agent using an exposure apparatus 500 and a step of developing the exposed photosensitive agent. Further, the substrate is subjected to an etching process, an ion implantation process, or the like using the pattern of the developed photosensitive agent as a mask, and a circuit pattern is formed on the substrate. The steps of exposure, development, etching, and the like are repeated to form a circuit pattern composed of a plurality of layers on the substrate. In the subsequent step, the substrate on which the circuit pattern is formed is cut (processed), and the chip mounting, bonding, and inspection steps are performed. The production method may include other known steps (oxidation, film formation, vapor deposition, doping, planarization, resist stripping, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of performance, quality, productivity, and production cost of the article as compared with the prior art.
While the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and it is needless to say that various modifications and alterations can be made within the scope of the gist thereof.
Claims (13)
1. A foreign matter detection device that detects a foreign matter on a transparent member, the foreign matter detection device characterized by comprising:
an irradiation unit that irradiates light obliquely to the transparent member;
a light receiving unit configured to detect scattered light from a foreign object on the transparent member irradiated with the light by the irradiation unit; and
a processing unit for performing a process of detecting the foreign matter,
the process comprises:
a first mode in which a relative position between the irradiation unit and the light receiving unit is set to a first state in which a distance between the irradiation unit and the light receiving unit is a first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the first state; and
a second mode in which a relative position between the irradiation unit and the light receiving unit is set to a second state in which a distance between the irradiation unit and the light receiving unit is a second distance longer than the first distance, the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the second state,
the processing unit acquires information indicating whether the side surface of the transparent member is a polished surface or a rough polished surface, and selects the first mode or the second mode based on the information.
2. The foreign matter detection device of claim 1, wherein,
the processing unit selects the first mode when the information indicates that the side surface of the transparent member is a polished surface, and selects the second mode when the information indicates that the side surface of the transparent member is a rough polished surface.
3. The foreign matter detection device of claim 1, wherein,
the difference between the first distance and the second distance is 10mm or more and 20mm or less.
4. The foreign matter detection device of claim 1, wherein,
the first state is a state in which an intersection point of the optical axis of the irradiation section and the surface of the transparent member and an intersection point of the optical axis of the light receiving section and the surface of the transparent member coincide,
the second state is a state in which an intersection point of the optical axis of the irradiation section and the surface of the transparent member and an intersection point of the optical axis of the light receiving section and the surface of the transparent member do not coincide.
5. The foreign matter detection device of claim 1, further comprising:
a generation section that generates the information based on an intensity distribution formed on the transparent member by the light irradiated from the irradiation section to the transparent member in the first state and an intensity distribution formed on the transparent member by the light irradiated from the irradiation section to the transparent member in the second state,
the processing unit obtains the information from the generating unit.
6. A foreign matter detection device according to claim 5, wherein,
the generation unit generates the information indicating that a side surface of the transparent member is a polished surface when a difference between an intensity distribution formed on the transparent member by the light irradiated from the irradiation unit to the transparent member in the first state and an intensity distribution formed on the transparent member by the light irradiated from the irradiation unit to the transparent member in the second state is equal to or less than a threshold value,
the generation unit generates the information indicating that the side surface of the transparent member is a rough surface when a difference between an intensity distribution formed on the transparent member by the light irradiated from the irradiation unit to the transparent member in the first state and an intensity distribution formed on the transparent member by the light irradiated from the irradiation unit to the transparent member in the second state is larger than the threshold value.
7. The foreign matter detection device of claim 1, wherein,
the irradiation section includes:
a light source that emits the light; and
a diaphragm including an opening for defining a width of the light emitted from the light source,
the foreign matter detection device further includes an irradiation control unit that controls the light quantity of the light emitted from the light source based on the size of the opening of the diaphragm.
8. The foreign matter detection device of claim 7, wherein,
the irradiation control section determines the size of the opening of the diaphragm based on the thickness of the transparent member.
9. A foreign matter detection device that detects a foreign matter on a transparent member, the foreign matter detection device characterized by comprising:
an irradiation unit that irradiates light obliquely to the transparent member;
a light receiving unit configured to detect scattered light from a foreign object on the transparent member irradiated with the light by the irradiation unit; and
a processing unit for performing a process of detecting the foreign matter,
the process comprises:
a first mode in which a relative position between the irradiation unit and the light receiving unit is set to a first state in which a distance between an intersection point of an optical axis of the irradiation unit and a surface of the transparent member and an intersection point of an optical axis of the light receiving unit and a surface of the transparent member is a first distance, and the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the first state; and
a second mode in which a relative position between the irradiation unit and the light receiving unit is set to a second state in which a distance between an intersection point of an optical axis of the irradiation unit and a surface of the transparent member and an intersection point of an optical axis of the light receiving unit and a surface of the transparent member is a second distance longer than the first distance, the foreign matter is detected based on a distribution of the scattered light detected by the light receiving unit in the second state,
the processing unit acquires information indicating whether the side surface of the transparent member is a polished surface or a rough polished surface, and selects the first mode or the second mode based on the information.
10. An exposure apparatus for exposing a substrate, the exposure apparatus comprising:
a projection optical system that projects a pattern of a mask onto the substrate; and
a foreign matter detection device for detecting a foreign matter on the mask,
the mask is composed of a transparent member formed with the pattern,
the foreign matter detection device includes the foreign matter detection device of claim 1.
11. An exposure apparatus for exposing a substrate, the exposure apparatus comprising:
a projection optical system that projects a pattern of a mask onto the substrate; and
a foreign matter detection device for detecting a foreign matter on the mask,
the mask is composed of a transparent member formed with the pattern,
the foreign matter detection device includes the foreign matter detection device of claim 9.
12. A method for manufacturing an article, comprising:
exposing a substrate with the exposure apparatus according to claim 10;
developing the exposed substrate; and
and a step of manufacturing an article from the developed substrate.
13. A method for manufacturing an article, comprising:
exposing a substrate with the exposure apparatus according to claim 11;
developing the exposed substrate; and
and a step of manufacturing an article from the developed substrate.
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| JP2018-193518 | 2018-10-12 | ||
| JP2018193518A JP7170491B2 (en) | 2018-10-12 | 2018-10-12 | Foreign matter detection device, exposure device, and article manufacturing method |
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| TW200745780A (en) * | 2006-04-14 | 2007-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
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| JP2016133357A (en) * | 2015-01-16 | 2016-07-25 | キヤノン株式会社 | Foreign matter inspection device, exposure device, and device manufacturing method |
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| JP3312849B2 (en) * | 1996-06-25 | 2002-08-12 | 松下電工株式会社 | Defect detection method for object surface |
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| JP6373074B2 (en) * | 2014-06-06 | 2018-08-15 | 株式会社ニューフレアテクノロジー | Mask inspection apparatus and mask inspection method |
| JP5850447B1 (en) * | 2015-04-06 | 2016-02-03 | レーザーテック株式会社 | Inspection device |
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| JP2006301303A (en) * | 2005-04-20 | 2006-11-02 | Canon Inc | Device and method for inspecting foreign matter, exposing device, and method for manufacturing device |
| TW200745780A (en) * | 2006-04-14 | 2007-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| JP2010133864A (en) * | 2008-12-05 | 2010-06-17 | Nikon Corp | Apparatus and method for detecting foreign substance, and apparatus and method for exposure |
| CN101832949A (en) * | 2009-03-11 | 2010-09-15 | 株式会社堀场制作所 | Particle inspection and removal apparatus, and particle inspection removal program |
| JP2016133357A (en) * | 2015-01-16 | 2016-07-25 | キヤノン株式会社 | Foreign matter inspection device, exposure device, and device manufacturing method |
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| KR102634513B1 (en) | 2024-02-07 |
| KR20200041779A (en) | 2020-04-22 |
| JP7170491B2 (en) | 2022-11-14 |
| CN111045291A (en) | 2020-04-21 |
| JP2020060521A (en) | 2020-04-16 |
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