CN109932876B - Measuring device, lithographic apparatus, method of manufacturing article, and measuring method - Google Patents

Measuring device, lithographic apparatus, method of manufacturing article, and measuring method Download PDF

Info

Publication number
CN109932876B
CN109932876B CN201811506973.7A CN201811506973A CN109932876B CN 109932876 B CN109932876 B CN 109932876B CN 201811506973 A CN201811506973 A CN 201811506973A CN 109932876 B CN109932876 B CN 109932876B
Authority
CN
China
Prior art keywords
substrate
light
intensity distribution
intensity
end portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811506973.7A
Other languages
Chinese (zh)
Other versions
CN109932876A (en
Inventor
前田浩平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN109932876A publication Critical patent/CN109932876A/en
Application granted granted Critical
Publication of CN109932876B publication Critical patent/CN109932876B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007Alignment other than original with workpiece
    • G03F9/7011Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention provides a measuring apparatus, a lithographic apparatus, a method of manufacturing an article, and a measuring method. Provided is a measuring device which is advantageous for measuring the edge position of a substrate with high accuracy. A measuring apparatus for measuring an edge position of a substrate includes: a detection unit that detects a 1 st intensity distribution of light that is irradiated with a 1 st light amount to an end portion of the substrate and reflected by the end portion, and a 2 nd intensity distribution of light that is irradiated with a 2 nd light amount different from the 1 st light amount to the end portion and reflected by the end portion; and a processing unit which determines the edge position of the substrate based on an intensity distribution of a group in which an intensity of a peak of the 1 st intensity distribution and an intensity of a peak of the 2 nd intensity distribution in a plurality of groups having mutually different positions in the light intensity distribution detected by the detection unit are within an allowable range, the detection signal of the 1 st intensity distribution and the detection signal of the 2 nd intensity distribution being associated with each other at the position in the light intensity distribution detected by the detection unit as 1 group.

Description

Measuring device, lithographic apparatus, method of manufacturing article, and measuring method
Technical Field
The present invention relates to a measuring apparatus for measuring an edge position of a substrate, a lithographic apparatus including the measuring apparatus, a method for manufacturing an article, and a measuring method.
Background
A lithographic apparatus for forming a pattern on a substrate such as a glass plate or a wafer is used for manufacturing an FPD (Flat Panel Display) or a semiconductor device. In such a lithographic apparatus, so-called pre-alignment is performed in which the edge position of the substrate held by the mounting table is measured and the position of the substrate is grasped before the substrate is accurately positioned based on the detection result of the position of the mark formed on the substrate.
As a measuring device for measuring the edge position of the substrate, for example, there is an optical measuring device that irradiates light to an end portion of the substrate to measure the edge position of the substrate. Patent document 1 discloses a so-called reflected light type measuring apparatus that irradiates light from a side of a substrate held by a mounting table to an end portion of the substrate, and detects the light reflected at the end portion of the substrate by a detection portion to measure an edge position of the substrate.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-116868
Disclosure of Invention
In the measurement device of the reflection type, in addition to the light reflected at the end portion of the substrate, the detection portion may detect stray light reflected (scattered) by a structure or the like in the lithography device. When such stray light is detected by the detection unit, it may be difficult to accurately determine the edge position of the substrate based on the detection result of the detection unit.
Accordingly, an object of the present invention is to provide a measuring apparatus advantageous for measuring the edge position of a substrate with high accuracy.
In order to achieve the above object, a measuring apparatus as one aspect of the present invention measures an edge position of a substrate, the measuring apparatus comprising: a detection unit that detects a 1 st intensity distribution of light that is irradiated with a 1 st light amount to an end portion of the substrate and reflected by the end portion, and a 2 nd intensity distribution of light that is irradiated with a 2 nd light amount different from the 1 st light amount to the end portion and reflected by the end portion; and a processing unit which determines an edge position of the substrate based on an intensity distribution of a group in which an intensity of a peak of the 1 st intensity distribution and an intensity of a peak of the 2 nd intensity distribution are within an allowable range, among a plurality of groups in which positions in the light intensity distribution detected by the detection unit are different from each other, with a detection signal of the 1 st intensity distribution and a detection signal of the 2 nd intensity distribution corresponding to each other in position in the light intensity distribution detected by the detection unit as 1 group.
In order to achieve the above object, a measuring apparatus as one aspect of the present invention measures an edge position of a substrate, the measuring apparatus comprising: a stage capable of moving while holding the substrate; a detection unit provided on the mounting table and configured to detect an intensity distribution of light emitted to an end portion of the substrate and reflected by the end portion; and a processing unit configured to determine an edge position of the substrate based on a peak having a smallest intensity change due to movement of the stage among the plurality of peaks in the light intensity distribution detected by the detection unit.
In order to achieve the above object, a measuring method as one aspect of the present invention measures an edge position of a substrate, the measuring method comprising: a detection step of detecting a 1 st intensity distribution of light that is irradiated with a 1 st light amount to an end portion of the substrate and reflected by the end portion, and a 2 nd intensity distribution of light that is irradiated with a 2 nd light amount different from the 1 st light amount to the end portion and reflected by the end portion; and a determination step of determining an edge position of the substrate based on an intensity distribution of a group in which an intensity of a peak of the 1 st intensity distribution and an intensity of a peak of the 2 nd intensity distribution are within an allowable range, among a plurality of groups having different positions on the detected light intensity distribution, by regarding a detection signal of the 1 st intensity distribution and a detection signal of the 2 nd intensity distribution, which have mutually corresponding positions on the light intensity distribution detected in the detection step, as 1 group.
In order to achieve the above object, a measurement method according to an aspect of the present invention is a measurement method for measuring an edge position of a substrate held by a movable stage, the measurement method including: a detection step of detecting an intensity distribution of light that is irradiated to an end portion of the substrate and reflected by the end portion before and after the movement of the stage; and a determining step of determining an edge position of the substrate based on a position of a peak having a smallest intensity change due to movement of the stage among the plurality of peaks in the light intensity distribution detected in the detecting step.
Further objects or other aspects of the present invention will become apparent from the preferred embodiments described hereinafter with reference to the accompanying drawings.
According to the present invention, for example, a measuring apparatus advantageous for measuring the edge position of a substrate with high accuracy can be provided.
Drawings
Fig. 1 is a schematic view showing an exposure apparatus according to embodiment 1.
Fig. 2 is a diagram showing the arrangement of a plurality of measurement portions.
Fig. 3 is a diagram showing the structure of the measurement unit.
Fig. 4 is a diagram showing the structure of the measurement unit.
Fig. 5 is a flowchart illustrating a method of measuring an edge position of a substrate.
Fig. 6 is a flowchart illustrating a method of measuring an edge position of a substrate.
Fig. 7 is a diagram showing an example of information indicating a relationship between the amount of rounding of the substrate end portion and the target light amount.
Fig. 8 is a graph showing a light intensity distribution when light is irradiated to an end portion of a substrate with the 1 st light amount and the 2 nd light amount.
Fig. 9 is a diagram showing a light intensity distribution obtained by the detection unit.
Description of the reference numerals
1: a mask; 2: a mask stage; 3: an illumination optical system; 4: a projection optical system; 5: a substrate; 6: a substrate mounting table; 7: a measuring section; 70: a detection unit; 71: an irradiation section; 72: a light receiving section; 73: a processing unit; 8: a control unit; 100: an exposure device.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. In the drawings, the same components or elements are denoted by the same reference numerals, and redundant description thereof is omitted.
In the following embodiments, an exposure apparatus that exposes a substrate is described as an example of a lithography apparatus, but the present invention is not limited to this. For example, the present invention can be applied to a lithography apparatus such as an imprint apparatus that forms a pattern of an imprint material on a substrate using a mold, and a drawing apparatus that irradiates a substrate with a charged particle beam (radiation beam) to form a pattern on the substrate. Here, the lithographic apparatus includes a forming section that irradiates a substrate with light or radiation to form a pattern on the substrate. In the exposure apparatus, a projection optical system that projects a pattern image of a mask onto a substrate using light can correspond to the formation portion. In the imprint apparatus, an imprint head that holds a mold and irradiates light onto an imprint material on a substrate via the mold may correspond to the formation portion. In the drawing device, a lens barrel for irradiating the substrate with the charged particle beam may correspond to the formation portion.
< embodiment 1 >
Referring to fig. 1, an exposure apparatus 100 according to embodiment 1 of the present invention is described. Fig. 1 is a schematic diagram showing an exposure apparatus 100 according to embodiment 1. The exposure apparatus 100 includes, for example, a mask stage 2, an illumination optical system 3, a projection optical system 4, a substrate stage 6 (stage), a plurality of measurement units 7 (measurement devices), and a control unit 8, and exposes a substrate 5 such as a glass substrate for an FPD to form a pattern (latent image) on the substrate. The control unit 8 is constituted by a computer having a CPU and a memory, for example, and controls each unit of the exposure apparatus 100 (controls the process of exposing the substrate 5). The exposure apparatus 100 includes a mechanism 12, and the mechanism 12 includes various sensors and the like for measuring characteristics related to exposure performance. The mechanism 12 includes, for example, a focus sensor for measuring the surface position of the substrate 5, an off-axis viewer for detecting (observing) a mark on the substrate, and the like, and can be supported by a support member 13 fixed to the projection optical system 4.
In the following description, a direction parallel to the optical axis of the light emitted from the projection optical system 4 is referred to as a Z direction, and two directions perpendicular to the optical axis and orthogonal to each other are referred to as an X direction and a Y direction. That is, two directions parallel to the upper surface of the substrate held by the substrate mounting table and orthogonal to each other are defined as an X direction and a Y direction.
The illumination optical system 3 illuminates the mask 1 held by the mask stage 2 using light emitted from a light source (not shown). The projection optical system 4 has a predetermined magnification and projects a pattern formed on the mask 1 onto the substrate 5. The mask 1 and the substrate 5 are held by the mask stage 2 and the substrate stage 6, respectively, and are arranged at positions (an object plane and an image plane of the projection optical system 4) substantially optically conjugate with each other through the projection optical system 4.
The substrate mounting table 6 is configured to hold the substrate 5 so that an end portion of the substrate 5 is exposed, and to be movable below the projection optical system 4 (forming portion). Specifically, the substrate mounting table 6 includes: a chuck 6a for holding the substrate 5 by a vacuum chuck or the like; and a driving section 6b for driving the chuck 6a (substrate 5). The chuck 6a holds the center portion of the substrate 5 so that the end portion of the substrate 5 is exposed from the chuck 6a (i.e., so that the end portion of the substrate 5 protrudes (protrudes) from the chuck 6 a). The driving unit 6b may be configured to drive the chuck 6a (substrate 5) in the XY direction, but is not limited thereto, and may be configured to drive the chuck 6a (substrate 5) in, for example, the Z direction, the θ direction (rotation direction about the Z axis), or the like.
The position of the substrate mounting table 6 is detected by the position detecting unit 9. The position detecting unit 9 includes, for example, a laser interferometer, irradiates a laser beam to the reflecting plate 6c provided on the substrate mounting table 6, and obtains the displacement of the substrate mounting table 6 with respect to the reference position from the laser beam reflected by the reflecting plate 6 c. Thus, the position detector 9 can detect the position of the substrate mounting table 6, and the controller 8 can control the position of the substrate mounting table 6 based on the detection result of the position detector 9.
The plurality of measuring units 7 are provided on the substrate mounting table 6, respectively, and can be used to grasp the position of the substrate 5 held by the substrate mounting table 6 (for example, to grasp the position of the substrate 5 with respect to the substrate mounting table 6). The plurality of measurement units 7 irradiate light to each end portion of the substrate 5, and measure the edge position of the substrate 5 based on the result of detecting the light reflected by the end portion 5.
In order to be able to obtain the position of the substrate 5 (for example, the position of the substrate itself) in the XY direction and the θ direction, the plurality of measuring units 7 are preferably arranged to measure the edge positions of mutually different portions at the end of the substrate 5. For example, as shown in fig. 2, the measuring unit 7a may be configured to measure the edge position on the Y direction side of the substrate 5, and the measuring units 7b and 7c may be configured to measure different edge positions on the X direction side of the substrate 5. Fig. 2 is a view of the substrate mounting table 6 (chuck 6a) holding the substrate 5 as viewed from above (Z direction). By disposing a plurality of (3) measuring units 7 in this manner, the positions of the substrate 5 in the XY direction and the θ direction can be obtained. Here, in the present embodiment, each measurement unit 7 is supported by the chuck 6a of the substrate mounting table 6, but the present invention is not limited to this, and each measurement unit 7 may be supported by the drive unit 6b of the substrate mounting table 6, for example. That is, each measuring unit 7 may be provided on the substrate mounting base 6.
Next, the structure of the measuring unit 7 will be described with reference to fig. 3. Fig. 3 is a diagram showing the configuration of the measuring unit 7, and shows, as an example, the configuration of a measuring unit 7a that measures the edge position on the Y direction side of the substrate 5. The measuring section 7 may include: a detection unit 70 that detects the intensity distribution (hereinafter, sometimes referred to as light intensity distribution) of light that is emitted from the end portion 5a of the substrate 5 to the light 10a and reflected by the end portion 5 a; and a processing unit 73 for determining the edge position of the substrate based on the light intensity distribution obtained by the detection unit 70. The detection unit 70 may include, for example: an irradiation section 71 that irradiates light onto the end 5a of the substrate 5; and a light receiving portion 72 that receives the light reflected by the end portion 5 a.
The irradiation section 71 irradiates light 10a from the side of the substrate 5 held by the substrate stage 6 (chuck 6a) toward the end 5a of the substrate 5. The irradiation unit 71 reflects light 10a having a wavelength of, for example, about 500nm to 1200nm emitted from the light source 71a by, for example, a reflecting mirror 71b, and irradiates the end 5a of the substrate 5 from the side of the substrate 5. As the light source 71a, for example, a semiconductor laser, an LED, or the like can be used, but from the viewpoint of cost, an LED is preferably used.
The light receiving unit 72 is disposed below the end 5a of the substrate 5 on which the light 10a is irradiated by the irradiation unit 71, receives the reflected light 10b from the end 5a, and detects the intensity distribution of the reflected light 10 b. Specifically, the light receiving unit 72 includes a plurality of lenses 72a and 72b and a light receiving element 72 c. The light receiving unit 72 receives the reflected light 10b from the end 5a of the substrate 5 by the light receiving element 72c via the plurality of lenses 72a, 72b, and detects a light intensity distribution formed on the light receiving surface of the light receiving element 72c by the reflected light 10 b. The data of the detected light intensity distribution is output to the processing unit 73. The light receiving element 72c may include a linear sensor (or an area sensor) including a photoelectric conversion element such as a CCD or a CMOS.
The processing unit 73 acquires data of the light intensity distribution from the detection unit 70 (light receiving element 72c), and determines the edge position of the substrate 5 based on the acquired data of the light intensity distribution (generates edge position information of the substrate 5). For example, the processing unit 73 can determine the edge position of the substrate 5 held by the substrate mounting table 6 based on the position of a peak signal (detection signal) in the light intensity distribution obtained by the detection unit 70. Here, the processing unit 73 is configured by a computer having a CPU, a memory (storage unit), and the like, and in the present embodiment, the processing unit 73 is configured as a component of the measurement unit 7, but is not limited thereto, and may be configured as a component of the control unit 8, for example.
In the measurement unit 7 configured as described above, as shown in fig. 4, the light 10a emitted from the irradiation unit 71 may be reflected by a structure in the device such as the mechanism 12 to become stray light 10c, and the stray light 10c may be detected by the detection unit 70 (light receiving element 72 c). In this case, in the light intensity distribution obtained by the detection portion 70, a plurality of peak signals (a plurality of detection signals) are generated due to the reflected light 10b and the stray light 10c from the end portion 5a of the substrate 5. Therefore, the processing unit 73 cannot determine which peak signal of the plurality of peak signals in the light intensity distribution is the signal corresponding to the reflected light 10b, and it may be difficult to accurately determine the edge position of the substrate 5.
Therefore, the measurement unit 7 (the processing unit 73) of the present embodiment performs a process of selecting a peak signal corresponding to the reflected light 10b from the end 5a of the substrate 5 among the plurality of peak signals in the light intensity distribution obtained by the detection unit (the light receiving unit 72). Thus, the processing unit 73 can accurately determine the edge position of the substrate 5 from the selected peak signal. Hereinafter, a method of measuring the edge position of the substrate 5 in the measuring unit 7 according to the present embodiment will be described with reference to fig. 5 and 6. Fig. 5 and 6 are flowcharts showing a method of measuring the edge position of the substrate 5 by the measuring unit 7. In the following description, each step of the flowcharts shown in fig. 5 and 6 can be performed by the processing unit 73, but may be performed by the control unit 8.
S11 to S16 in fig. 5 are the following processes: in this process, the amount of light irradiated from the irradiation unit 71 to the end portion 5a of the substrate 5 is changed, so that a peak signal used for determining the edge position of the substrate 5 is selected from among a plurality of peak signals in the light intensity distribution obtained by the detection unit 70. In the following description, the rounding amount of the end portion 5a of the substrate 5 as the measurement target of the edge position is estimated to be within a predetermined standard (standard lower limit value R)1And a standard upper limit value R2In between) are unknown values. In the configuration of the measuring unit 7 according to the present embodiment, the intensity (also referred to as signal intensity or peak value) of the peak signal of the reflected light 10b reflected by the substrate end and detected by the detecting unit 70 (light receiving element 72c) can be determined based on the substrate endThe amount of rounding varies.
In S11, the processing unit 73 sets a standard lower limit value R of the amount of rounding of the substrate end portion1Corresponding 1 st light quantity I1And a standard upper limit value R of the amount of rounding off from the substrate end2Corresponding 2 nd light quantity I2. The rounding amount at the end of the substrate is a standard lower limit value R1In the case of (1) the first light quantity I1The intensity of the reflected light from the substrate end (i.e., the intensity of the peak signal corresponding to the reflected light from the substrate end) is set to a target intensity ETBut a target amount of light to be irradiated to the end portion of the substrate. The rounding amount at the substrate end is a standard upper limit value R2In the case of (2) nd light quantity I2The intensity of the reflected light from the substrate end (i.e., the intensity of the peak signal corresponding to the reflected light from the substrate end) is set to a target intensity ETBut a target amount of light to be irradiated to the end portion of the substrate. Target intensity ETThe intensity (preferably, the center intensity) can be set to an arbitrary intensity within the dynamic range of the light receiving element 72 c.
For example, the processing unit 73 can set the target intensity E based on the rounding amount indicating the substrate end and the intensity of the reflected light from the substrate endTThe 1 st light quantity I is set1And 2 nd light quantity I2. Fig. 7 is a diagram showing an example of information indicating a relationship between the amount of rounding of the substrate end portion and the target light amount. This relationship can be obtained in advance by experiments, simulations, and the like, and stored in the processing unit 73 in the form of a formula, a table, and the like. By using the information shown in fig. 7, the processing unit 73 can set the standard lower limit value R of the rounding amount with respect to the substrate end portion1Corresponding 1 st light quantity I1And a standard upper limit value R of the amount of rounding with the substrate end2Corresponding 2 nd light quantity I2. 1 st amount of light I1And 2 nd light quantity I2Are different amounts of light from each other.
In S12, the processing unit 73 sets the 1 st light quantity I in S111And 2 nd light quantity I2The light is irradiated to the end 5a of the substrate 5, and the light reflected by the end 5a is detected by the detecting part 70The intensity distribution. Hereinafter, the 1 st light quantity I may be used1The intensity distribution when light is irradiated to the end portion 5a is called 1 st intensity distribution, and will be at 2 nd light quantity I2The intensity distribution when light is irradiated to the end portion 5a is referred to as a 2 nd intensity distribution. In S12, the position of the substrate mounting table 6 is not changed between the case where the detection unit 70 detects the 1 st intensity distribution and the case where the detection unit 70 detects the 2 nd intensity distribution. That is, the position of the substrate mounting table 6 may be the same between the 1 st intensity distribution detection and the 2 nd intensity distribution detection.
FIG. 8 is a graph showing the light quantity I at the 1 st1And 2 nd light quantity I2A graph of the light intensity distribution obtained by the detection section 70 when light is irradiated to the end portion 5a of the substrate 5. In fig. 8, the horizontal axis represents the position in the detection direction (light irradiation direction), the vertical axis represents the signal intensity, and the broken line represents the amount of used light I1The 1 st intensity distribution 11 obtained is shown by the solid line indicating the amount of light I used2And the resulting 2 nd intensity distribution 12. In the example shown in fig. 8, a plurality of (3) groups 13a to 13c can be obtained by setting the peak signal of the 1 st intensity distribution 11 and the peak signal of the 2 nd intensity distribution 12, which correspond to each other in position in the intensity distribution, as 1 group. The 1 set of peak signals among the plurality of sets 13a to 13c may be signals corresponding to the reflected light 10b, and the other sets of peak signals may be signals corresponding to the stray light 10 c.
In S13, the processing unit 73 selects, among the plurality of sets 13a to 13c of the light intensity distribution obtained by the detection unit 70, a set in which the intensity of the peak signal of the 1 st intensity distribution 11 and the intensity of the peak signal of the 2 nd intensity distribution 12 are both within the allowable range (within the allowable range AR). In the example shown in fig. 8, a group in which the intensity of the peak signal of the 1 st intensity distribution 11 and the intensity of the peak signal of the 2 nd intensity distribution are both within the allowable range AR is the group 13 b. Therefore, the processing unit 73 selects the group 13b as a group of peak signals for determining the edge position.
Here, the lower limit value V of the allowable range ARLFor example, the standard lower limit value R of the rounding amount of the substrate end can be set1Using the 2 nd light quantity I2The intensity of the peak signal obtained in the case of (1). Further, the upper limit value V of the allowable range ARUFor example, the standard upper limit value R of the rounding amount of the substrate end can be set2Using the 1 st quantity of light I1The intensity of the peak signal obtained in the case of (1). Lower limit value V of allowable range ARLAnd an upper limit value VUFor example, the processing unit 73 may set the result based on an experiment, simulation, or the like. When the allowable range AR is thus set, as long as the rounding amount of the end portion 5a of the substrate 5 is within the standard, even at the 1 st light amount I1And 2 nd light quantity I2The amount of irradiation light to be applied to the end portion 5a is changed, and the intensity of the peak signal corresponding to the reflected light 10b also falls within the allowable range AR in both of these amounts of light. Therefore, the processing unit 73 can select, as the signal component for determining the edge position, a group in which both the peak signal of the 1 st intensity distribution 11 and the peak signal of the 2 nd intensity distribution 12 are within the allowable range AR.
At S14, the processor 73 determines whether or not two or more groups have been selected at S13. If two or more groups are not selected (i.e., if 1 group is selected), the process proceeds to S15. On the other hand, if two or more groups are selected, the process proceeds to S21 in fig. 6. At S15, the processing unit 73 sets the intensity of the peak signal detected at the position of the group selected at S13 to the target intensity ETThe irradiation light quantity irradiated to the end portion 5a of the substrate 5 is adjusted. In the example shown in fig. 8, the intensity of the peak signal detected at the position of the group 13b is set to the target intensity ETThe irradiation light amount is adjusted. In S16, the processing unit 73 determines the edge position of the substrate 5 based on the position of the peak signal of the group 13b selected in S13 (generates edge position information).
S21 to S26 in fig. 6 are the following processes: in this process, when two or more groups are selected in the step of S13, a group for determining the edge position is selected from among the two or more groups. Specifically, the processing selects a group having the smallest intensity change of the peak signal before and after the movement of the substrate mounting table 6 from among the two or more groups. Here, the processing of S21 to S26 in the present embodiment is performed to select a group for determining the edge position from among two or more groups selected in the processing of S11 to S16, but the present invention is not limited to this. For example, instead of performing the processing of S11 to S16, the processing of S21 to S26 may be performed to select a peak signal for determining the edge position from among a plurality of peak signals included in the light intensity distribution obtained by the detection unit 70 at the beginning at a predetermined irradiation light amount. That is, the processes from S21 to S26 may be performed from the beginning without performing the processes from S11 to S16.
In S21, the processing unit 73 sets the intensity of the peak signal of the group 13b selected in S13 to the target intensity ETIn the embodiment (1), the amount of irradiation light to be applied to the end portion 5a of the substrate 5 is adjusted. In S22, the processing unit 73 causes the detection unit 70 to detect the light intensity distribution when the end portion 5a of the substrate 5 is irradiated with the irradiation light amount adjusted in S21. Fig. 9(a) is a graph showing the light intensity distribution obtained by the detection section 70 in S22, and in the example shown in fig. 9(a), two peak signals 14a, 14b detected at the positions of two groups, respectively, in the case where the two groups are selected in S13 are shown. In S23, the processing unit 73 (control unit 8) moves the substrate mounting table 6. In S24, the processing unit 73 causes the detection unit 70 to detect the light intensity distribution when the end portion 5a of the substrate 5 is irradiated with the irradiation light amount adjusted in S21. Fig. 9(b) is a graph showing the light intensity distribution obtained by the detection unit 70 in S24, and in the example shown in fig. 9(b), two peak signals 14a and 14b detected at the positions of two sets selected in S13 are shown, as in fig. 9 (a). Here, in S22 and S24, the amount of irradiation light to be applied to the end portion 5a of the substrate 5 when the light intensity distribution is detected may be the same.
In S25, the processing unit 73 compares the light intensity distribution obtained in S22 (fig. 9(a)) with the light intensity distribution obtained in S24 (fig. 9 (b)). Then, of the two or more groups (peak signals) selected in S13, the group (peak signal) in which the change in signal intensity due to the movement of the substrate mounting table 6 is the smallest is selected. In S26, the processing unit 73 determines the edge position of the substrate 5 based on the peak position of the group (peak signal) selected in S25 (generates edge position information).
As described above, since the detection unit 70 is provided on the substrate mounting table 6, the intensity of the peak signal corresponding to the reflected light 10b from the end 5a of the substrate 5 does not change even when the substrate mounting table 6 is moved. On the other hand, when the substrate mounting table 6 is moved, the intensity of the peak signal corresponding to the stray light 10c changes. That is, the processing unit 73 can select, as the peak signal corresponding to the reflected light 10b, the peak signal having the smallest change in peak intensity due to the movement of the substrate mounting table 6 among the two or more peak signals appearing in the light intensity distribution. In the example shown in fig. 9, since the change in signal intensity of the peak signal 14a due to the movement of the substrate mounting table 6 is smaller than that of the peak signal 14b, the processing unit 73 can select the peak signal 14a as the peak signal corresponding to the reflected light 10 b. Here, the moving direction of the substrate mounting table 6 may be any of the XY direction, the Z direction, and the θ direction, and the moving amount of the substrate mounting table 6 may be any, but it is preferable to set the change of the signal component corresponding to the stray light 10c to be equal to or larger than the threshold value.
As described above, in the measurement unit 7 of the present embodiment, when a plurality of peak signals are included in the light intensity distribution obtained by the detection unit 70, the peak signal corresponding to the reflected light 10b is selected by changing the irradiation light amount to be irradiated to the end portion 5a of the substrate 5 or moving the substrate mounting table 6. Thus, the measurement unit 7 can reduce measurement errors due to the stray light 10c, and accurately determine the edge position of the substrate 5.
< embodiment of Process for producing article >
The method for manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as a micro device such as a semiconductor device and an element having a microstructure, for example. The method of manufacturing an article according to the present embodiment includes a step of forming a pattern on a substrate using the above-described lithography apparatus (exposure apparatus), and a step of processing the substrate on which the pattern is formed in the step. Further, such a manufacturing method includes other known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least 1 of the performance, quality, productivity, and production cost of the article, as compared with the conventional method.
While the preferred embodiments of the present invention have been described above, it is a matter of course that the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist thereof.

Claims (9)

1. A measurement apparatus that measures an edge position of a substrate, the measurement apparatus comprising:
a detection unit that detects a 1 st intensity distribution of light that is irradiated with a 1 st light amount to an end portion of the substrate and reflected by the end portion, and a 2 nd intensity distribution of light that is irradiated with a 2 nd light amount different from the 1 st light amount to the end portion and reflected by the end portion; and
a processing unit which determines an edge position of the substrate based on an intensity distribution of a group in which an intensity of a peak of the 1 st intensity distribution and an intensity of a peak of the 2 nd intensity distribution are within an allowable range among a plurality of groups in which positions on the light intensity distribution detected by the detection unit are different from each other, the detection signal of the 1 st intensity distribution and the detection signal of the 2 nd intensity distribution corresponding to each other in position on the light intensity distribution detected by the detection unit being regarded as 1 group,
the processing unit sets the 1 st light quantity so that the intensity of the reflected light from the substrate end becomes a target intensity when the rounding amount of the substrate end is a standard lower limit value, and sets the 2 nd light quantity so that the intensity of the reflected light from the substrate end becomes the target intensity when the rounding amount of the substrate end is a standard upper limit value.
2. The measuring device of claim 1,
the processing unit sets the 1 st light quantity and the 2 nd light quantity based on information indicating a relationship between a rounding amount of an edge of the substrate and a light quantity at which an intensity of reflected light from the edge of the substrate becomes the target intensity.
3. A measuring device according to claim 1,
the processing unit sets the allowable range with the intensity of the peak of the 2 nd intensity distribution, which can be obtained when the 2 nd light amount is applied to the standard lower limit of the rounding amount of the substrate end portion, as a lower limit, and with the intensity of the peak of the 1 st intensity distribution, which can be obtained when the 1 st light amount is applied to the standard upper limit of the rounding amount of the substrate end portion, as an upper limit.
4. The measuring device of claim 1,
the measuring apparatus further includes a stage movable in a state of holding the substrate,
the detection unit is provided on the mounting table.
5. A measuring device according to claim 4,
when two or more groups are selected, the processing unit determines the edge position of the substrate based on the peak position of a group having the smallest intensity change of the peak of the light intensity distribution due to the movement of the stage among the two or more groups selected.
6. The measuring device of claim 1,
the detection section includes: an irradiation unit configured to irradiate light to an end portion of the substrate from a side of the substrate; and a light receiving part which receives the light reflected by the end part below the end part.
7. A lithographic apparatus for forming a pattern on a substrate,
the lithographic apparatus comprising a measurement device according to any one of claims 1 to 6 for measuring the edge position of the substrate.
8. A method of manufacturing an article, comprising:
a step of forming a pattern on a substrate using the lithographic apparatus according to claim 7; and
a step of processing the substrate on which the pattern is formed in the step,
manufacturing an article from the processed substrate.
9. A measurement method of measuring an edge position of a substrate, the measurement method comprising:
a detection step of detecting a 1 st intensity distribution of light that is irradiated with a 1 st light amount to an end portion of the substrate and reflected by the end portion, and a 2 nd intensity distribution of light that is irradiated with a 2 nd light amount different from the 1 st light amount to the end portion and reflected by the end portion; and
a determination step of determining an edge position of the substrate based on an intensity distribution of a group in which an intensity of a peak of the 1 st intensity distribution and an intensity of a peak of the 2 nd intensity distribution are within an allowable range among a plurality of groups having different positions on the detected light intensity distribution, with a detection signal of the 1 st intensity distribution and a detection signal of the 2 nd intensity distribution corresponding to each other in position on the light intensity distribution detected in the detection step as 1 group,
in the determining step, the 1 st light quantity is set so that the intensity of the reflected light from the substrate end becomes the target intensity when the rounding amount of the substrate end is a standard lower limit value, and the 2 nd light quantity is set so that the intensity of the reflected light from the substrate end becomes the target intensity when the rounding amount of the substrate end is a standard upper limit value.
CN201811506973.7A 2017-12-15 2018-12-11 Measuring device, lithographic apparatus, method of manufacturing article, and measuring method Active CN109932876B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-241120 2017-12-15
JP2017241120A JP7057655B2 (en) 2017-12-15 2017-12-15 Measuring equipment, lithography equipment, manufacturing method of goods, and measuring method

Publications (2)

Publication Number Publication Date
CN109932876A CN109932876A (en) 2019-06-25
CN109932876B true CN109932876B (en) 2022-07-05

Family

ID=66984747

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811506973.7A Active CN109932876B (en) 2017-12-15 2018-12-11 Measuring device, lithographic apparatus, method of manufacturing article, and measuring method

Country Status (3)

Country Link
JP (1) JP7057655B2 (en)
KR (1) KR102395738B1 (en)
CN (1) CN109932876B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3779882B1 (en) * 2019-08-16 2022-07-20 Sick IVP AB Providing intensity peak position in image data from light triangulation in a three-dimensional imaging system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000304510A (en) * 1999-04-23 2000-11-02 Fuji Photo Film Co Ltd Position detecting method of work edge and its device
CN1727841A (en) * 2004-07-27 2006-02-01 兄弟工业株式会社 Edge position detecting apparatus and method, and program
US20080203334A1 (en) * 2007-02-26 2008-08-28 Kabushiki Kaisha Toshiba Position detecting apparatus and position detecting method
CN103968759A (en) * 2014-05-07 2014-08-06 京东方科技集团股份有限公司 Device and method for detection

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4048385B2 (en) * 1996-08-19 2008-02-20 株式会社ニコン Optical pre-alignment apparatus and exposure apparatus provided with the pre-alignment apparatus
JP2006041387A (en) * 2004-07-29 2006-02-09 Nikon Corp Position measuring method, exposure method, exposure device and device manufacturing method
JP5903855B2 (en) * 2011-11-30 2016-04-13 オムロン株式会社 Optical displacement sensor
JP2013153108A (en) * 2012-01-26 2013-08-08 Yaskawa Electric Corp Substrate positioning device
JP6748428B2 (en) * 2015-12-25 2020-09-02 キヤノン株式会社 Lithographic apparatus, article manufacturing method, stage apparatus, and measuring apparatus
JP2017215219A (en) * 2016-06-01 2017-12-07 キヤノン株式会社 Measurement device, pattern formation device, and article manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000304510A (en) * 1999-04-23 2000-11-02 Fuji Photo Film Co Ltd Position detecting method of work edge and its device
CN1727841A (en) * 2004-07-27 2006-02-01 兄弟工业株式会社 Edge position detecting apparatus and method, and program
US20080203334A1 (en) * 2007-02-26 2008-08-28 Kabushiki Kaisha Toshiba Position detecting apparatus and position detecting method
CN103968759A (en) * 2014-05-07 2014-08-06 京东方科技集团股份有限公司 Device and method for detection

Also Published As

Publication number Publication date
JP7057655B2 (en) 2022-04-20
KR20190072419A (en) 2019-06-25
CN109932876A (en) 2019-06-25
KR102395738B1 (en) 2022-05-10
JP2019109311A (en) 2019-07-04

Similar Documents

Publication Publication Date Title
US9639008B2 (en) Lithography apparatus, and article manufacturing method
KR101672576B1 (en) Detection device, exposure apparatus, and device manufacturing method using same
JP2020522727A (en) System and method for alignment measurement
KR102180702B1 (en) Lithographic apparatus, method of manufacturing article, and measurement apparatus
US9746789B2 (en) Exposure apparatus, and method of manufacturing article
KR102242152B1 (en) Lithography apparatus and article manufacturing method
CN109564397B (en) Measuring apparatus, exposure apparatus, and method of manufacturing article
CN109932876B (en) Measuring device, lithographic apparatus, method of manufacturing article, and measuring method
US10095125B2 (en) Measurement apparatus, lithography apparatus, and method of manufacturing article
KR101487060B1 (en) Charged particle beam drawing apparatus and method of manufacturing article
JP2016090444A (en) Measurement device, lithography device, and article manufacturing method
KR101679941B1 (en) Imprint device, and device manufacturing method
JP2020134587A (en) Measurement apparatus, exposure apparatus, method of manufacturing article
KR102605547B1 (en) Imprint apparatus and method of manufacturing article
KR102189048B1 (en) Detecting apparatus, detecting method, computer program, lithography apparatus, and article manufacturing method
CN108292111B (en) Method and apparatus for processing a substrate in a lithographic apparatus
US20230030661A1 (en) Measuring device, measuring method, substrate processing apparatus, and method of manufacturing product
CN111413850B (en) Exposure apparatus, method for controlling exposure apparatus, and method for manufacturing article
CN111258183B (en) Lithographic apparatus, method of determining and method of manufacturing an article
JP2010185807A (en) Surface profile measuring device, surface profile measuring method, exposure system, and device manufacturing method
JP6528994B2 (en) Inspection method of structure for nanoimprint and method of manufacturing the same
JP2017215219A (en) Measurement device, pattern formation device, and article manufacturing method
KR20240102853A (en) Forming method, forming apparatus, and article manufacturing method
JP2024017047A (en) Foreign substance determination method and lithography device
KR20220138803A (en) Exposure apparatus, exposure method, and article manufacturing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant