CN111041452A

CN111041452A - Bottom electrode and chemical vapor deposition device

Info

Publication number: CN111041452A
Application number: CN201911222447.2A
Authority: CN
Inventors: 兰天宇
Original assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2019-12-03
Filing date: 2019-12-03
Publication date: 2020-04-21
Anticipated expiration: 2039-12-03
Also published as: CN111041452B

Abstract

The invention discloses a lower electrode and a chemical vapor deposition device, wherein the lower electrode comprises a base, a bearing plate arranged on the base and an anode film plated on the surface of the bearing plate; the anode film comprises a first area and a second area surrounding the first area, the surface roughness of the first area is first roughness, the surface roughness of the second area is second roughness, the first roughness is larger than the second roughness, the bearing plate is used for bearing a glass substrate, and four corners of the glass substrate are located in the second area. According to the invention, the shapes of the first area and the second area in the anode film of the lower electrode are changed, so that four corners of the glass substrate are positioned in the second area in the chemical vapor deposition process, the scratch of the edge of the lower surface of the glass substrate caused by extrusion with the lower electrode is reduced, and the production yield of OLED products is improved.

Description

Bottom electrode and chemical vapor deposition device

Technical Field

The invention relates to the field of liquid crystal panel manufacturing, in particular to a lower electrode and a chemical vapor deposition device.

Background

With the social development, the demand for display devices is increasing, which promotes the rapid development of the liquid crystal panel industry, and the Chemical Vapor Deposition (CVD) device is a key device in the process of manufacturing liquid crystal panels and semiconductors, and the lower electrode is a key component in the CVD device.

When the existing chemical vapor deposition device works, a glass substrate is placed on the lower electrode, and the edge of the glass substrate is subjected to positive pressure of the shielding frame, so that the lower surface of the glass substrate is extruded with the lower electrode, and the back edge of the glass substrate is scratched. The back alignment is usually adopted for organic light-Emitting Diode (OLED) products during evaporation, the position of the alignment mark is just located in the area of the back scratch of the glass substrate, the scratch directly affects the identification of the back-stage evaporation alignment mask plate, the products cannot be evaporated, and thus the production yield of the OLED products is affected.

In summary, the existing OLED product has a technical problem that evaporation cannot be performed due to scratching of the back of the glass substrate.

Disclosure of Invention

The embodiment of the invention provides a lower electrode and a dry etching machine, which are used for solving the technical problem that evaporation can not be performed due to back scratch of a glass substrate in the production of the conventional OLED product.

In order to solve the above problem, in a first aspect, the present invention provides a lower electrode, including: the device comprises a base, a bearing plate arranged on the base and an anode film plated on the surface of the bearing plate;

the anode film comprises a first area and a second area surrounding the first area, the surface roughness of the first area is first roughness, the surface roughness of the second area is second roughness, the first roughness is larger than the second roughness, the bearing plate is used for bearing a glass substrate, and four corners of the glass substrate are located in the second area.

In some embodiments of the present invention, the first roughness is 15 to 25 um.

In some embodiments of the present invention, the second roughness is 5-10 um.

In some embodiments of the invention, the material of the anodic film is alumina.

In some embodiments of the present invention, the thickness of the anodic film is 10 to 20 um.

In some embodiments of the invention, the first region comprises at least one chamfered region.

In some embodiments of the invention, the profile of the chamfered region is a straight chamfer or a round chamfer.

In some embodiments of the present invention, the outer contour of the second region is a rectangle, a shortest distance between a vertex of the rectangle and the chamfered region is a first distance, a shortest distance between a straight line side of the rectangle and the first region is a second distance, and the first distance is greater than the second distance.

In some embodiments of the present invention, the first distance has a length of 35 to 100mm, and the second distance has a length of 5 to 30 mm.

In a second aspect, the present invention also provides a chemical vapor deposition apparatus comprising: vacuum chamber, shadow frame, diffuser plate, top electrode and bottom electrode as described in the above embodiments.

According to the invention, the shapes of the first area and the second area in the lower electrode anode film are changed, so that four corners of the glass substrate are positioned in the second area in the chemical vapor deposition process, and the surface roughness of the first area is larger than that of the second area, so that the scratch of the edge of the lower surface of the glass substrate caused by extrusion with the lower electrode is reduced, the alignment mark of an OLED product is completed during the later stage evaporation, and the production yield of the OLED product is improved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a lower electrode according to an embodiment of the present invention;

FIG. 2 is a top view of FIG. 1; and

FIG. 3 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.

After the chemical vapor deposition process of the existing OLED product, the back edge of the glass substrate has a scratching condition, the scratching directly influences the identification of the back-stage evaporation contraposition mask plate, and the product cannot be evaporated, so that the yield of the OLED product is influenced.

Accordingly, embodiments of the present invention provide a bottom electrode (Susceptor) and a chemical vapor deposition apparatus. The following are detailed below.

First, an embodiment of the invention provides a bottom electrode, and as shown in fig. 1, the bottom electrode in an embodiment of the invention is a schematic structural diagram. The lower electrode includes a base 101, a carrier plate 102 disposed on the base 101, and an anode film 103 plated on a surface of the carrier plate 102.

The resistance wire supporting device comprises a base 101, a bearing plate 102, a resistance wire connector and an auxiliary resistance wire, wherein the base 101 is of a cylindrical structure, the bearing plate 102 is of a plate-shaped structure formed by splicing through a welding process, the base 101 is connected with the bearing plate 102 through the welding process, a through hole is reserved at the joint of the base 101 and the bearing plate 102, the resistance wire connector penetrates into the base 101 through the through hole and is connected with an external power supply through the bottom of the base 101, and the base 101 has the function of supporting the bearing plate 102 and the auxiliary resistance wire. The material of the base 101 and the carrier plate 102 is preferably 6061 aluminum alloy, and the material of the anode film is preferably aluminum oxide, and more preferably aluminum oxide.

In the embodiment of the present invention, as shown in fig. 2, it is a top view of fig. 1. The anode membrane 103 comprises a first region 1031 and a second region 1032 arranged around the first region 1031, the surface roughness of the first region 1031 is a first roughness Ra1, the surface roughness 1032 of the second region is a second roughness Ra2, and the first roughness Ra1 is greater than the second roughness Ra 2.

The carrier plate 102 is used for carrying a glass substrate, and four corners of the glass substrate are located in the second region 1032. In the chemical vapor deposition process, the bearing plate 102 bears the glass substrate, the anode film 103 is in direct contact with the glass substrate, when the four corners of the glass substrate are located in the second regions 1032, even if the glass substrate and the lower electrode are extruded, the four corners of the glass substrate are also located in the second regions 1032 with relatively smaller surface roughness, and the phenomenon of scratching the edges of the lower surface of the glass substrate is improved, so that the production yield of the OLED product is improved.

In the embodiment of the present invention, the surface roughness Ra1 of the first region 1031 is preferably 15 to 25um, more preferably 17.9 to 21.5um, and most preferably 19.1um and 20.3 um. The surface roughness Ra2 of second area 1032 preferably is 5 ~ 10um, more preferably is 5.5 ~ 7.5um, and the most preferably is 6.2um, 6.8 um. The thickness of the anode film 103 is preferably 10-20 um, and more preferably 12-14 um.

When the anode film 103 meets the above requirements, when chemical vapor deposition is performed, the main area of the glass substrate (i.e., all areas of the glass substrate except the four corner areas) is located in the first area 1031 where the surface roughness is relatively larger, so that the thermal uniformity of the glass substrate during the chemical vapor deposition process can be improved, and meanwhile, the glass substrate can be prevented from being too tight in bonding with the lower electrode due to the fact that the bonding surface is too smooth, and the glass substrate is prevented from being broken in the stripping process after the chemical vapor deposition is completed. However, the four corner regions of the glass substrate are located in the second region 1032 with relatively smaller surface roughness, so that the edge region of the glass substrate is prevented from being scratched due to the fact that the joint surface is too rough when the glass substrate and the lower electrode are extruded.

On the basis of the above embodiments, in another embodiment of the present invention, the specific shapes of the first region 1031 and the second region 1032 within the anode membrane 103 may be optimized. The first regions 1031 may be regular or irregular in shape, and the second regions 1032 are formed in the entire region of the anode film 103 excluding the first regions 1031, and are generally disposed to surround the first regions 1031. However, for ease of processing in actual production, it is preferred that the first region 1031 includes at least one chamfered region; more preferably, the profile of the chamfer area is a straight chamfer or a round chamfer; most preferably, the shape of the first region 1031 corresponds to the design of the glass substrate, the first region 1031 is the same as the main region of the glass substrate, and only four corner regions of the glass substrate are provided with at least one straight chamfer region or one round chamfer region, so that the reduction of scratches and the convenience of processing can be realized at the same time. Of course, it is understood that the specific shapes of the first region 1031 and the second region 1032 may also be other regular shapes or irregular shapes in other embodiments, and no rigid constraint is made here.

In another embodiment, the outer contour of the second area 1032 is a rectangle, the shortest distance between the vertex of the rectangle and the chamfered area is a first distance a, the shortest distance between the straight edge of the rectangle and the first area 1031 is a second distance b, and the first distance a is greater than the second distance b. When the first distance a is greater than the second distance b, the first region 1031 may be left empty without specific limitation on the shape of the chamfered region.

In this embodiment, preferably, the length of the first distance a is 35 to 100mm, and the length of the second distance b is 5 to 30 mm. It is understood that the specific lengths of the first distance a and the second distance b are closely related to the size of the glass substrate, and are merely preferred embodiments in this embodiment.

In order to better implement the bottom electrode in the embodiment of the present invention, on the basis of the bottom electrode, a chemical vapor deposition apparatus is further provided in the embodiment of the present invention, as shown in fig. 3, which is a schematic structural diagram of the chemical vapor deposition apparatus in an embodiment of the present invention. The chemical vapor deposition apparatus includes a vacuum chamber 201, a shadow frame 202, a diffusion plate 203, an upper electrode 204, and a lower electrode 205 as described in the above embodiments.

The vacuum chamber 201 is used for providing a deposition space for a chemical vapor deposition process, the shadow frame 202 is used for protecting the edge of the glass substrate 206 and other components in the chamber from deposition, and applying a pressure limiting position to the glass substrate 206, the diffusion plate 203 has a plurality of small holes for more uniformly distributing reaction gas in the chamber, the upper electrode 204 is used for connecting a power supply and introducing gas, and the lower electrode 205 is used for bearing the glass substrate 206 and providing a reaction temperature.

By using the lower electrode 205 in the above embodiment, when the shadow frame 202 applies pressure to press the glass substrate 206 and the lower electrode 205, scratches on the back edge of the glass substrate 206 are hardly visible, and no influence is exerted on alignment marks of a mask plate in a subsequent evaporation process, and after film formation, the thickness of the glass substrate 206 is measured, and there is no difference between the thickness of the main body region and the thickness of the four corner regions of the glass substrate 206.

In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.

The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the description of the above embodiments is only used to help understanding the technical scheme and the core idea of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims

1. A lower electrode comprises a base, a bearing plate arranged on the base and an anode film plated on the surface of the bearing plate;

2. The lower electrode according to claim 1, wherein the first roughness is 15 to 25 um.

3. The lower electrode according to claim 1, wherein the second roughness is 5 to 10 um.

4. The lower electrode according to claim 1, wherein a material of the anodic film is alumina.

5. The lower electrode according to claim 1, wherein the thickness of the anodic film is 10-20 um.

6. The lower electrode of claim 1, wherein the first region comprises at least one chamfered region.

7. The lower electrode of claim 5, wherein the profile of the chamfered region is a straight chamfer or a rounded chamfer.

8. The bottom electrode of claim 5, wherein the second region has a rectangular outer contour, a shortest distance between a vertex of the rectangle and the chamfered region is a first distance, a shortest distance between a straight side of the rectangle and the first region is a second distance, and the first distance is greater than the second distance.

9. The lower electrode according to claim 8, wherein the first distance has a length of 35 to 100mm, and the second distance has a length of 5 to 30 mm.

10. A chemical vapor deposition apparatus comprising a vacuum chamber, a shadow frame, a diffusion plate, an upper electrode, and the lower electrode according to any one of claims 1 to 9.