CN111033722A - High-frequency module and method for manufacturing same - Google Patents

High-frequency module and method for manufacturing same Download PDF

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Publication number
CN111033722A
CN111033722A CN201880053669.3A CN201880053669A CN111033722A CN 111033722 A CN111033722 A CN 111033722A CN 201880053669 A CN201880053669 A CN 201880053669A CN 111033722 A CN111033722 A CN 111033722A
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China
Prior art keywords
sealing resin
resin layer
substrate
frequency module
conductor
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CN201880053669.3A
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Chinese (zh)
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CN111033722B (en
Inventor
大坪喜人
山口理
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

Provided is a high-frequency module, wherein a shield layer and a grounding electrode of an external substrate are connected by a conductor pin, thereby reducing the shield resistance and stabilizing the shield performance. A high-frequency module (1) is provided with: a substrate (2); a 1 st member (4) mounted on the upper surface (2a) of the substrate (2); a 2 nd member (5) mounted on the lower surface (2b) of the substrate (2); an upper sealing resin layer (6) and a lower sealing resin layer (7); a conductor pin (8); and a shielding layer (9). The conductor pin (8) has: a terminal section (8a) exposed from the lower surface (7a) of the lower sealing resin layer (7) and connected to the ground electrode of the external substrate; and a shield connection section (8b) which is exposed from the side surface (7b) of the lower sealing resin layer (7) and is connected to the shield layer (9). By connecting the terminal portion (8a) of the conductor pin (8) to the ground electrode, the shield layer (9) can be connected to the ground potential at the shortest distance, and the shield resistance can be reduced.

Description

High-frequency module and method for manufacturing same
Technical Field
The present invention relates to a high-frequency module having a shield layer and a method for manufacturing the same.
Background
A high-frequency module mounted in a mobile terminal device or the like may be provided with a shielding layer for shielding electromagnetic waves. In addition, in such a module, a component mounted on a substrate is covered with a mold resin, and a shield layer is provided to cover a surface of the mold resin. As a high-frequency module provided with such a shield layer, for example, there is a module 100 described in patent document 1 shown in fig. 10.
In the module 100, the component 102 mounted on the upper surface 101a of the substrate 101 is covered with the upper sealing resin layer 103, the plurality of components 102 mounted on the lower surface 101b of the substrate 101 and the plurality of metal pins 105 as connection terminals are covered with the lower resin layer 104, and the shield layer 106 is formed on the surface of the upper sealing resin layer 103. By providing the shield layer 106, noise that is transmitted from the outside to the member 102 can be prevented, and electromagnetic waves can be prevented from being radiated from the member 102. Further, the shield layer 106 is electrically connected to the grounding wire provided on the substrate 101, whereby the shield effect can be further improved.
Patent document 1: japanese patent No. 5768888 (see paragraphs 0078 to 0080 and FIG. 6)
However, when the shield layer 106 is connected to a grounding wire provided on the substrate 101 as in the module 100 described above, the distance from the shield layer 106 to the ground increases, and therefore there is a possibility that the shield resistance increases. Further, since the grounding conductor is provided on the substrate 101, there is a problem that the degree of freedom in designing the substrate 101 is reduced.
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a high-frequency module in which a shield resistance is reduced by connecting a shield layer to a ground electrode at the shortest distance, and in which a wiring for ground connection does not need to be provided on a substrate, thereby increasing the degree of freedom in designing the substrate.
In order to achieve the above object, a module according to the present invention includes: a substrate; a 1 st member mounted on one main surface of the substrate; a 1 st sealing resin layer sealing the one principal surface and the 1 st member; a 2 nd sealing resin layer which is laminated on the other main surface of the substrate, and has a contact surface which is in contact with the other main surface of the substrate, an opposed surface which is opposed to the contact surface, and a side surface which connects end edges of the contact surface and the opposed surface to each other; a connection conductor disposed on the 2 nd sealing resin layer; and a shield layer covering at least a surface of the 1 st sealing resin layer, the side surface of the 2 nd sealing resin layer, and a side surface connecting end edges of the one main surface and the other main surface of the substrate to each other, wherein the connection conductor has a portion exposed from the side surface of the 2 nd sealing resin layer and connected to the shield layer, and a portion exposed from the opposite surface of the 2 nd sealing resin layer and connected to a ground electrode of an external substrate.
According to this configuration, the shield layer can be connected to the ground potential in a shorter distance than when connected to the ground electrode provided on the substrate, and therefore, the shield resistance can be reduced and the shield performance can be improved. Further, since the connection conductor connected to the ground electrode is connected to the shield layer, the shield layer can be connected to the ground potential in a large area, and the shield performance can be stabilized.
Further, the connection conductor may include: a pair of legs that stand on the other main surface of the substrate with one ends thereof connected to the other main surface; and a bridge portion that connects the other ends of the pair of leg portions to each other, wherein the bridge portion in the connection conductor includes a portion exposed from the side surface of the 2 nd sealing resin layer and a portion exposed from the opposite surface, and the leg portions include portions exposed from the side surface of the 2 nd sealing resin layer, respectively. According to this configuration, the connection area between the connection conductor and the shield layer can be increased on the side surface of the 2 nd sealing resin layer, and therefore, the shielding performance can be further stabilized.
Further, the connection conductor may include: a 1 st portion extending in a direction parallel to the other main surface of the substrate with one end exposed from the side surface of the 2 nd sealing resin layer; and a 2 nd portion extending from the other end of the 1 st portion toward the facing surface of the 2 nd sealing resin layer, and an end portion of the 2 nd portion being exposed from the facing surface. According to this configuration, since the connection portion of the connection conductor connected to the ground electrode of the external substrate does not contact the shield layer on the surface of the 2 nd sealing resin layer facing the substrate, damage to the shield layer during reflow processing of the substrate can be suppressed. In addition, when the solder is connected to an external substrate, the solder can be prevented from short-circuiting to an adjacent electronic component via the shielding layer.
Further, the connection conductor may include: a 3 rd portion extending in a direction parallel to the facing surface of the 2 nd sealing resin layer; and a 4 th portion extending from one end of the 3 rd portion toward the other main surface of the substrate, wherein the 3 rd portion includes a portion exposed from the side surface of the 2 nd sealing resin layer and a portion exposed from the opposite surface of the 2 nd sealing resin layer. According to this configuration, the shield layer can be connected to the ground potential at a short distance as compared with the case of being connected to the ground electrode provided on the substrate, and therefore, the shield resistance can be reduced and the shield performance can be improved.
The connection conductor may not be connected to the substrate. According to this configuration, since it is not necessary to provide a pad electrode for connecting the connection conductor on the substrate, the wiring area of the substrate can be reduced, and the degree of freedom in designing the substrate can be improved.
In addition, the high-frequency module may further include a 2 nd member attached to the other main surface of the substrate, and the connection conductor may be in contact with the 2 nd member. According to this configuration, since the connection conductor is in contact with the 2 nd member, heat generated from the 2 nd member can be released to the outside of the module.
Further, a method for manufacturing a high-frequency module according to the present invention includes: a substrate assembly preparation step of preparing a substrate assembly in which a plurality of substrates are arranged in a matrix; a mounting step of mounting the 1 st component on the one principal surface of each of the plurality of substrates, and mounting a conductor pin joint body in which the other ends of the 3 rd portions of the 2 conductor pins are connected to each other on the other principal surface side of the plurality of substrates so as to straddle the adjacent substrates; a sealing resin layer forming step of forming the 1 st sealing resin layer and forming the 2 nd sealing resin layer, the 1 st sealing resin layer sealing the 1 st member mounted on the plurality of substrates and the one main surface of each of the plurality of substrates, and the 2 nd sealing resin layer sealing the conductor pin bonded body mounted on the plurality of substrates and the other main surface of each of the plurality of substrates; an exposure step of polishing or grinding the facing surface of the 2 nd sealing resin layer to expose a part of the conductor pin bonded body from the facing surface of the 2 nd sealing resin layer; and a singulation step of singulating the substrate assembly into the respective substrates, wherein in the mounting step, the conductor pin joint is mounted so as to straddle adjacent ones of the substrates by connecting the 4 th portion of one of the substrates of the conductor pin joint to one of the adjacent substrates and connecting the other 4 th portion to the other of the adjacent substrates, and in the singulation step, when the 1 st sealing resin layer, the 2 nd sealing resin layer, and the substrate assembly are cut, the connection portions of the 2 conductor pins in the conductor pin joint are cut together to become a connection conductor, and a part of the 3 rd portion of the connection conductor is exposed from the side surface of the 2 nd sealing resin layer.
In this case, the shield layer can be connected to the ground potential in a short distance as compared with the case of being connected to the ground electrode provided on the substrate, and a module with low shield resistance can be manufactured. In addition, since the connection area between the shield layer and the connection conductor can be increased, the shield performance can be stabilized.
According to the present invention, the shield layer can be connected to the ground potential at a short distance as compared with the case of being connected to the ground electrode provided on the substrate, and therefore, the shield resistance can be reduced. Further, it is not necessary to provide a wiring for ground connection on the substrate, and the degree of freedom in designing the substrate can be improved.
Drawings
Fig. 1 is a sectional view of a high-frequency module according to embodiment 1 of the present invention.
Fig. 2 is a rear view of the high-frequency module according to embodiment 1 of the present invention.
Fig. 3 is a diagram showing a modification of the high-frequency module of fig. 1.
Fig. 4 is a sectional view of the high-frequency module according to embodiment 2 of the present invention.
Fig. 5 is a diagram illustrating a method of manufacturing the high frequency module of fig. 4.
Fig. 6 is a sectional view of the high-frequency module according to embodiment 3 of the present invention.
Fig. 7 is a rear view of the high-frequency module according to embodiment 3 of the present invention.
Fig. 8 is a sectional view of the high-frequency module according to embodiment 4 of the present invention.
Fig. 9 is a diagram showing a modification of the high-frequency module of fig. 8.
Fig. 10 is a cross-sectional view of a conventional high-frequency module.
Detailed Description
< embodiment 1 >
A high-frequency module 1 according to embodiment 1 of the present invention will be described with reference to fig. 1 and 2. Fig. 1 is a sectional view of a high-frequency module 1 according to embodiment 1, and fig. 2 is a rear view of the high-frequency module of fig. 1.
The high-frequency module 1 according to embodiment 1 is mounted on, for example, a mother board of an electronic device. As shown in fig. 1, the high-frequency module 1 includes: a substrate 2 having a pad electrode 3 formed on an upper surface 2a (corresponding to "one main surface" of the present invention) and a lower surface 2b (corresponding to "the other main surface" of the present invention); a plurality of 1 st members 4 mounted on the upper surface 2a of the substrate 2; a plurality of 2 nd members 5 attached to the lower surface 2b of the substrate 2; an upper sealing resin layer 6 (corresponding to the "1 st sealing resin layer" of the present invention) that seals the upper surface 2a of the substrate 2 and each 1 st member 4; a lower sealing resin layer 7 (corresponding to the "2 nd sealing resin layer" of the present invention) that seals the lower surface 2b of the substrate 2 and each 2 nd member 5; a plurality of conductor pins 8 (corresponding to "connection conductors" in the present invention) disposed on the lower sealing resin layer 7; and a shield layer 9 covering the surface of the upper sealing resin layer 6, the side surface of the substrate 2, and the side surface 7b of the lower sealing resin layer 7.
The substrate 2 is formed of, for example, low-temperature co-fired ceramic, glass epoxy, or the like. A plurality of pad electrodes 3 are formed on the upper surface 2a and the lower surface 2b of the substrate 2, and a plurality of ground electrodes (not shown), a plurality of wiring electrodes (not shown), a plurality of conductive conductors (not shown), and the like are formed on the surface layer and the inner layer of the substrate 2. In addition, each ground electrode is formed to be exposed from the side surface of the substrate 2, for example.
Each pad electrode 3, each ground electrode, and each wiring electrode are formed of a metal generally used as an electrode, such as Cu, Ag, or Al. Each of the via conductors is made of a metal such as Ag or Cu.
Examples of the 1 st component 4 and the 2 nd component 5 include an inductor, a capacitor, an IC, and a power amplifier. Each of the 1 st members 4 is mounted on the upper surface 2a of the substrate 2 by connecting a connection terminal to the pad electrode 3 formed on the upper surface 2a of the substrate 2 with solder 10. Each of the 2 nd members 5 is mounted on the lower surface 2b of the substrate 2 by connecting a connection terminal to the pad electrode 3 formed on the lower surface 2b of the substrate 2 with solder 10. Further, the 1 st member 4 and the 2 nd member 5 mounted on the substrate 2 may be mounted one by one.
The upper sealing resin layer 6 is provided on the substrate 2 so as to cover the upper surface 2a of the substrate 2 and the respective 1 st members 4, and the lower sealing resin layer 7 is provided so as to cover the lower surface 2b of the substrate 2 and the respective 2 nd members 5. The upper sealing resin layer 6 and the lower sealing resin layer 7 can be formed of a resin that is generally used as a sealing resin, such as an epoxy resin to which a silicone filler is added. In addition, a filler having a high thermal conductivity such as an alumina filler may be used for the purpose of improving heat radiation. As shown in fig. 2, the lower surface 7a of the lower sealing resin layer 7 may be provided with connection terminals 12 for connection to an external substrate.
The conductor pin 8 as a connection conductor is made of a material such as a Cu alloy, e.g., Cu-Ni alloy, Cu-Fe alloy, or Fe, Au, Ag, or Al. The conductor pin 8 is formed by, for example, cutting a wire rod of a metal conductor having a desired diameter and having a circular or polygonal cross-sectional shape by a predetermined length. One end of the conductor pin 8 is exposed from the lower surface 7a of the lower sealing resin layer 7, and serves as a terminal portion 8a for connection to a ground electrode provided on an external substrate. The shield connection portion 8b, which is obtained by exposing the conductor pin 8 from the side surface 7b of the lower sealing resin layer 7, is connected to the shield layer 9. Therefore, when the high-frequency module 1 is mounted on the external substrate, the ground electrode provided on the external substrate is connected to the conductive pin 8, and as a result, the shield layer 9 is electrically connected to the ground electrode provided on the external substrate.
The shielding layer 9 is formed to cover the surface of the upper sealing resin layer 6, the side surface of the substrate 2, and the side surface 7b of the lower sealing resin layer 7, for shielding electromagnetic waves from the outside with respect to the wiring electrodes, the ground electrodes, and the 1 st member 4 in the substrate 2. The shield layer 9 is electrically connected to, for example, a ground electrode provided on an external substrate via the conductor pin 8. In other words, the shield layer 9 is directly connected to the ground electrode provided on the external substrate without via the wiring within the substrate 2. The shield layer 9 may be formed on an inner layer of the substrate 2 and electrically connected to a ground electrode exposed on a side surface of the substrate 2.
The shield layer 9 may have a multilayer structure including an adhesive film laminated on the surface of each of the sealing resin layers 6 and 7, a conductive film laminated on the adhesive film, and a protective film laminated on the conductive film. The adhesion film is provided to improve the adhesion strength between the conductive film and the sealing resin layers 6 and 7, and may be formed of a metal such as SUS, for example. The adhesion film may be Ti, Cr, Ni, TiAl, or the like. The conductive film is a layer that plays an actual shielding function of the shielding layer 9, and can be formed of any metal of Cu, Ag, and Al, for example. The protective film is provided to prevent corrosion or damage of the conductive film, and may be formed of SUS, for example. The protective film may be Ti, Cr, Ni, TiAl, or the like.
(method of manufacturing high frequency Module)
Next, a method for manufacturing the high-frequency module 1 will be described. In embodiment 1, the high-frequency module 1 is manufactured by forming an aggregate of a plurality of high-frequency modules 1 and then singulating the high-frequency modules.
First, an assembly of the substrate 2 is prepared, in which a plurality of pad electrodes 3 are formed on the upper surface 2a and the lower surface 2b thereof, and a plurality of ground electrodes, a plurality of wiring electrodes, a plurality of conductive conductors, and the like are formed on the surface layer or the inner layer thereof. Each of the pad electrodes 3, the ground electrodes, and the wiring electrodes can be formed by screen printing or the like of a conductive paste containing a metal such as Cu, Ag, or Al. In addition, after the via hole is formed using a laser or the like, each of the via conductors can be formed by a known method.
Next, the components 4 and 5 are mounted on the upper surface 2a and the lower surface 2b of the substrate 2 using a known surface mounting technique. For example, the solder 10 is formed on a desired pad electrode 3 among the pad electrodes 3 of the substrate 2, the respective members 4 and 5 are mounted on the corresponding pad electrode 3 among the pad electrodes 3 on which the solder 10 is formed, and then, the reflow process is performed. After the reflow process, the collection of substrates 2 may be cleaned as necessary.
Next, the conductor pin 8 is mounted on the lower surface 2b of the substrate 2 using a known surface mounting technique. The conductor pins 8 are formed by attaching columnar metal pins to the boundaries of the adjacent substrates 2, connecting the conductor pins 8 to both the adjacent substrates 2 before singulation, and cutting the metal pins for each substrate during singulation. By forming in this manner, as shown in fig. 2, the cross section (terminal portion 8a) of the conductive pin 8 is semicircular on the rear surface (lower surface 7a of the lower sealing resin layer 7) of the high-frequency module 1. That is, the conductor pin 8 is formed in a shape in which a semi-cylindrical pin is erected on the lower sealing resin layer 7, and the flat side surface of the conductor pin 8 is connected to the shield layer 9. The conductive pin 8 may be a columnar pin, and may not have a semicircular cross section.
Then, an upper sealing resin layer 6 and a lower sealing resin layer 7 are formed to cover the respective members 4, 5 mounted on the upper surface 2a and the lower surface 2b of the substrate 2. The sealing resin layers 6 and 7 can be formed by, for example, transfer molding, compression molding, liquid resin application, sheet resin application, or the like. In addition, a common epoxy resin with a silicone filler can be used for the sealing resin layers 6 and 7. In order to provide the sealing resin layers 6 and 7 with high thermal conductivity, an epoxy resin to which a filler having high thermal conductivity such as an alumina filler is added may be used. After the sealing resin layers 6 and 7 are formed, the substrate 2 may be plasma cleaned as needed.
Further, after the lower sealing resin layer 7 is formed, the lower surface 7a of the lower sealing resin layer 7 is polished or ground to expose the terminal portions 8a of the conductor pins 8.
After the sealing resin layers 6 and 7 are formed, the high-frequency module 1 is singulated by a known method such as a dicing machine or laser processing. Then, the surface of the upper sealing resin layer 6, the side surface 7b of the lower sealing resin layer 7, and the side surface of the substrate 2 are covered with a sputtering device or a vacuum deposition device to form the shielding layer 9, thereby completing the high-frequency module 1.
According to the above-described embodiment, when the high-frequency module 1 is mounted on the external substrate, the ground electrode provided on the external substrate is connected to the conductive pin 8, whereby the shield layer 9 is connected to the ground potential. In other words, the shield layer 9 is directly connected to a ground electrode provided on an external substrate via the conductor pin 8, not via wiring in the substrate 2. Therefore, compared to the case where the ground electrode provided in the inner layer of the substrate 2 is connected to the ground potential, the ground electrode can be connected to the ground potential in a short distance, and thus the shield resistance can be reduced. Further, it is not necessary to provide a wiring for ground connection on the substrate, and the degree of freedom in designing the substrate can be improved. Further, compared to connection to a ground electrode provided on the substrate 2, the connection area between the shield layer 9 and the conductor pin 8, that is, the connection area between the shield layer 9 and the ground electrode can be increased, and therefore, the shield performance can be stabilized.
(modification of conductor Pin)
A modification of the conductor pin 8 will be described with reference to fig. 3. Fig. 3 is a side view of the high-frequency module 1 a.
As shown in fig. 3, the conductor pin 80 is formed of a U-shaped pin having a pair of leg portions 80a having one ends connected to the lower surface 2b of the substrate 2 and a bridge portion 80b connecting the other ends of the leg portions 80a to each other. At this time, the shield connection portion 80c formed by the side surfaces of the leg portions 80a and the bridge portion 80b is U-shaped on the side surface 7b of the lower sealing resin layer 7. In this case, the connection area between the shield layer 9 and the conductor pin 80 can be made larger.
< embodiment 2 >
A high-frequency module 1b according to embodiment 2 of the present invention will be described with reference to fig. 4 and 5. Fig. 4 is a sectional view of the high-frequency module 1b according to embodiment 2, and fig. 5 is a sectional view showing a method for manufacturing the high-frequency module 1b of fig. 4.
As shown in fig. 4, the high-frequency module 1b according to embodiment 2 is different from the high-frequency module 1 according to embodiment 1 described with reference to fig. 1 and 2 in that the conductor pin 81 is formed of an L-shaped pin. The other configurations are the same as those of the high-frequency module 1 according to embodiment 1, and therefore the same reference numerals are used to omit descriptions thereof.
As shown in fig. 4a, the conductor pin 81 is formed of an L-shaped pin having a horizontal portion 81a (corresponding to the "3 rd portion" of the present invention) exposed from the lower surface 7a of the lower sealing resin layer 7 and a vertical portion 81b (corresponding to the "4 th portion" of the present invention) extending from the horizontal portion 81a toward the lower surface 2b of the substrate 2. The horizontal portion 81a has: a terminal portion 82a which is a terminal exposed from the lower surface 7a of the lower sealing resin layer 7 and connected to a ground electrode provided on an external substrate, and a shield connecting portion 82b exposed from the side surface 7b of the lower sealing resin layer 7. When the high-frequency module 1b is mounted on an external board, the terminal portion 82a is connected to a ground electrode provided on the external board. The shield connection portion 82b is connected to the shield layer 9. As a result, the shield layer 9 is electrically connected to a ground electrode provided on the external substrate. The conductor pin 81 may be connected to a ground electrode provided on the substrate 2.
Further, as shown in fig. 4(b), if the conductor pin 81 is disposed directly on the substrate 2, there is a possibility that a gap may be formed between the lower surface 2b of the substrate 2 and the conductor pin 81, and in this case, the solder 10 is formed between the lower surface 2b of the substrate 2 and the conductor pin 81, thereby suppressing the occurrence of the gap.
(method of manufacturing high frequency Module)
A method for manufacturing the high-frequency module 1b will be described with reference to fig. 5. In embodiment 2, a plurality of high-frequency modules 1b are formed and then singulated to manufacture a high-frequency module 1 b. Fig. 5(a) is a cross-sectional view showing the aggregate 10b of the high-frequency modules 1b before being singulated, and fig. 5(b) is a cross-sectional view showing the high-frequency modules 1b after being singulated.
First, an aggregate 10b of the substrate 2 is prepared, in which a plurality of pad electrodes 3 are formed on the upper surface 2a and the lower surface 2b, and a plurality of ground electrodes, a plurality of wiring electrodes, a plurality of conductive conductors, and the like are formed on the surface layer or the inner layer. Each of the pad electrodes 3, the ground electrodes, and the wiring electrodes can be formed by screen printing or the like of a conductive paste containing a metal such as Cu, Ag, or Al. In addition, after the via hole is formed using a laser or the like, each of the via conductors can be formed by a known method.
Next, the components 4 and 5 are mounted on the upper surface 2a and the lower surface 2b of the substrate 2 using a known surface mounting technique. For example, the solder 10 is formed on a desired pad electrode 3 among the pad electrodes 3 of the substrate 2, the respective members 4 and 5 are mounted on the corresponding pad electrode 3 among the pad electrodes 3 on which the solder 10 is formed, and then the reflow process is performed. After the reflow process, the assembly 10b of substrates 2 may be cleaned as necessary.
Next, as shown in fig. 5(a), a U-shaped conductor pin joint body 83 connecting the shield connection portions 82b is attached to the lower surface 2b of the substrate 2. At this time, the conductor pin joint body 83 is attached such that one vertical portion 81b of the conductor pin joint body 83 is connected to one of the adjacent substrates 2, the other vertical portion 81b is connected to the other substrate 2, and the conductor pin joint body 83 crosses the boundary of the adjacent substrates 2 (the dotted line portion in fig. 5 (a)).
Then, the high-frequency module 1b is singulated by dicing, laser processing, or the like. In the singulation, the conductor pin bonded body 83 is divided into two parts, and the shield connection portion 82b is exposed from the side surface 7b of the lower sealing resin layer 7 (see fig. 5 (b)). The shield layer 9 is formed on the high-frequency module 1b after the singulation by a method such as sputtering or spin coating, thereby completing the high-frequency module 1 b.
According to the above-described embodiment, the shield layer 9 can be connected to the ground potential at a short distance as compared with the case of being connected to the ground electrode provided on the substrate 2, and therefore, the shield resistance can be reduced and the shield performance can be improved.
< embodiment 3 >
A high-frequency module 1c according to embodiment 3 of the present invention will be described with reference to fig. 6 and 7. Fig. 6 is a cross-sectional view of the high-frequency module 1c according to embodiment 3, and fig. 7 is a rear view of the high-frequency module 1c of fig. 6.
The high-frequency module 1c according to embodiment 3 is different from the high-frequency module 1 according to embodiment 1 described with reference to fig. 1 and 2 in that the conductor pin 84 is formed of an L-shaped pin as shown in fig. 6. The other configurations are the same as those of the high-frequency module 1 according to embodiment 1, and therefore the same reference numerals are used to omit descriptions thereof.
As shown in fig. 6(a), the conductor pin 84 is composed of a 1 st portion 84a and a 2 nd portion 84b, the 1 st portion 84a being connected to the lower surface 2b of the substrate 2 and having a shield connecting portion 85b at an end surface, and the 2 nd portion 84b having a terminal portion 85a exposed from the lower surface 2b of the lower sealing resin layer 7. At this time, as shown in fig. 7, the terminal portion 85a is formed on the lower surface 7a of the lower sealing resin layer 7 so as to be separated from the shield layer 9. When the high-frequency module 1c is mounted on an external board, the terminal portion 85a is connected to a ground electrode provided on the external board. By connecting the shield connection portion 85b to the shield layer 9, the shield layer 9 is connected to the ground potential. As shown in fig. 6(b), the solder 10 may be provided between the conductor pin 84 and the lower surface 2b of the substrate 2.
According to the above embodiment, the terminal portions 85a do not contact the shield layer 9 on the lower surface 2b of the lower sealing resin layer 7, and therefore the shield layer 9 is unlikely to be damaged during the reflow process. In addition, the solder is unlikely to short-circuit the adjacent electronic component via the shield layer 9.
< embodiment 4 >
A high-frequency module 1d according to embodiment 4 of the present invention will be described with reference to fig. 8. Fig. 8 is a cross-sectional view of a high-frequency module 1d according to embodiment 4.
The high-frequency module 1d according to embodiment 4 is different from the high-frequency module 1 according to embodiment 1 described with reference to fig. 1 and 2 in that the conductor pin 86 is not connected to the lower surface 2b of the substrate 2 but is in contact with the 2 nd member 5 as shown in fig. 8. The other configurations are the same as those of the high-frequency module 1 according to embodiment 1, and therefore the same reference numerals are used to omit descriptions thereof.
In the high-frequency module 1d of the present embodiment, as shown in fig. 8, the conductor pin 86 includes: the terminal portion 86a serving as a terminal connected to a ground electrode provided on the external substrate and the shield connecting portion 86b connected to the shield layer 9 are disposed so that the conductor pin 86 is not connected to the lower surface 2b of the substrate 2 but is in contact with the 2 nd member 5. That is, the columnar conductor pin 86 is disposed substantially parallel to the lower surface 2b of the substrate 2, and a part of the conductor pin 86 is disposed in contact with the 2 nd member 5. For example, as shown in fig. 8(a), a plurality of the 2 nd members 5 and the members 50 not in contact with the conductor pins 86 may be attached to the lower surface 2b of the substrate 2, and the conductor pins 86 may be arranged so as to be in contact with the lower surfaces 5a of the 2 nd members 5, respectively. As shown in fig. 8(b), 2 conductor pins 86 may be arranged to contact the lower surface 5a of the 1 nd member 5. As shown in fig. 8(c), the conductor pin 86 may be in contact with the side surface 5b of the 1 nd member 5. Further, all the conductor pins 86 may not be in contact with the 2 nd member 5.
According to the above-described embodiment, the same effects as those of the high-frequency module 1 according to embodiment 1 can be obtained, and the heat generated from the 2 nd member 5 can be released to the outside of the high-frequency module 1d by bringing the conductor pin 86 into contact with the 2 nd member 5. As shown in fig. 8(c), the height of the high-frequency module 1d can be reduced when the conductor pin 86 is brought into contact with the side surface 5b of the 2 nd member 5 or when the conductor pin 86 is not brought into contact with at least the lower surface 5a of the 2 nd member 5. Further, since it is not necessary to connect the conductor pin 86 to the lower surface 2b of the substrate 2, the pad electrode 3 does not need to be provided, the wiring region can be saved in the lower surface 2b of the substrate 2, and the degree of freedom in design can be improved. In addition, the area of the conductor pin 86 exposed from the lower surface 7a of the lower sealing resin layer 7 is increased, thereby improving the connectivity with the external substrate. In addition, damage to the shield during reflow processing can be reduced during connection to an external substrate.
(modification of conductor Pin)
A modification of the conductor pin 86 will be described with reference to fig. 9. Fig. 9 is a cross-sectional view of the high-frequency module 1 e.
As shown in fig. 9(a), the conductor pin 87 is constituted by a horizontal portion 87a (corresponding to "part 1" of the present invention) having a shield connecting portion 88b connected to the lower surface 5a of the component 5 and a vertical portion 87b (corresponding to "part 2" of the present invention) having a terminal portion 88a exposed from the lower surface 7a of the lower sealing resin layer 7. In this case, since it is not necessary to connect the conductor pin 87 to the lower surface 2b of the substrate 2, it is not necessary to provide the pad electrode 3 on the lower surface 2b of the substrate 2, and thus the wiring area can be reduced, and the degree of freedom in design can be improved. As shown in fig. 9(b), the lower surface 7a of the lower sealing resin layer 7 may be polished or ground so that the member 50 is exposed from the lower surface 7a of the lower sealing resin layer 7. In this case, the heat generated from the member 50 can be released to the outside of the high-frequency module 1 e.
The present invention is not limited to the above embodiments, and various modifications other than the above can be made without departing from the scope of the invention.
Industrial applicability
The present invention is applicable to a module having a heat-radiating structure in which a component generating heat is mounted on a substrate.
Description of reference numerals
1. 1 a-1 e … modules; 2 … a substrate; 2a … upper surface (one main surface); 2b … lower surface (the other main surface); 4 … part 1; 5 … part 2; 6 … upper side sealing resin layer (1 st sealing resin layer); 7 … lower side sealing resin layer (2 nd sealing resin layer); 8. 80, 81, 84, 86, 87 … conductor pins (connecting conductors); 81a … horizontal section (section 3); 81b … vertical section (section 4); 83 … conductor pin joint; 87a … horizontal section (section 1); 87b … vertical section (section 2); 9 … shield layer.

Claims (7)

1. A high-frequency module is provided with:
a substrate;
a 1 st member mounted on one main surface of the substrate;
a 1 st sealing resin layer sealing the one principal surface and the 1 st member;
a 2 nd sealing resin layer which is laminated on the other main surface of the substrate, and has a contact surface which is in contact with the other main surface of the substrate, an opposed surface which is opposed to the contact surface, and a side surface which connects end edges of the contact surface and the opposed surface to each other;
a connection conductor disposed on the 2 nd sealing resin layer; and
a shield layer covering at least a surface of the 1 st sealing resin layer, the side surface of the 2 nd sealing resin layer, and a side surface connecting end edges of the one main surface and the other main surface of the substrate to each other,
the connection conductor has a portion exposed from the side surface of the 2 nd sealing resin layer to be connected to the shield layer and a portion exposed from the opposite surface of the 2 nd sealing resin layer to be connected to a ground electrode of an external substrate.
2. The high-frequency module as claimed in claim 1,
the connection conductor has: a pair of legs that stand on the other main surface of the substrate with one end thereof connected to the other main surface; and a bridge portion connecting the other ends of the pair of leg portions to each other,
of the connection conductors, the connection conductors are,
the bridging portion has a portion exposed from the side face of the 2 nd sealing resin layer and a portion exposed from the opposite face,
the leg portions respectively present portions exposed from the side faces of the 2 nd sealing resin layer.
3. The high-frequency module as claimed in claim 1,
the connection conductor has:
a 1 st portion extending in a direction parallel to the other main surface of the substrate in a state where one end is exposed from the side surface of the 2 nd sealing resin layer; and
and a 2 nd portion which is disposed so as to extend from the other end of the 1 st portion toward the facing surface of the 2 nd sealing resin layer, and an end portion of which is exposed from the facing surface.
4. The high-frequency module as claimed in claim 1,
the connection conductor has:
a 3 rd portion extending in a direction parallel to the facing surface of the 2 nd sealing resin layer; and
a 4 th portion extending from one end of the 3 rd portion toward the other main surface of the substrate,
the 3 rd portion has a portion exposed from the side face of the 2 nd sealing resin layer and a portion exposed from the opposite face of the 2 nd sealing resin layer.
5. The high-frequency module as claimed in claim 1,
the connection conductor is not connected to the substrate.
6. The high-frequency module according to claim 5,
the high-frequency module further comprises a 2 nd member mounted on the other main surface of the substrate,
the connecting conductor is in contact with the 2 nd component.
7. A method for manufacturing a high-frequency module according to claim 4, comprising:
a substrate assembly preparation step of preparing a substrate assembly in which a plurality of substrates are arranged in a matrix;
a mounting step of mounting the 1 st component on the one principal surface of each of the plurality of substrates, and mounting a conductor pin joint body in which the other ends of the 3 rd portions of the 2 conductor pins are connected to each other on the other principal surface side of the plurality of substrates so as to straddle the adjacent substrates;
a sealing resin layer forming step of forming the 1 st sealing resin layer and forming the 2 nd sealing resin layer, the 1 st sealing resin layer sealing the 1 st member mounted on the plurality of substrates and the one main surface of each of the plurality of substrates, respectively, and the 2 nd sealing resin layer sealing the conductor pin bonded body mounted on the plurality of substrates and the other main surface of each of the plurality of substrates, respectively;
an exposure step of polishing or grinding the facing surface of the 2 nd sealing resin layer to expose a part of the conductor pin bonded body from the facing surface of the 2 nd sealing resin layer; and
a singulation step of singulating the substrate assembly into the respective substrates,
in the mounting step, the conductor pin joint body is mounted so as to straddle the adjacent substrates by connecting one of the 4 th parts of the conductor pin joint body to one of the adjacent substrates and connecting the other of the 4 th parts to the other of the adjacent substrates,
in the singulation step, when the 1 st sealing resin layer, the 2 nd sealing resin layer, and the substrate assembly are cut, the connection portions of the 2 conductor pins in the conductor pin bonded body are cut together to be a connection conductor, and a part of the 3 rd portion of the connection conductor is exposed from the side surface of the 2 nd sealing resin layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111554674A (en) * 2020-05-15 2020-08-18 甬矽电子(宁波)股份有限公司 Package body with electromagnetic shielding function and packaging process

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018088318A1 (en) * 2016-11-11 2018-05-17 三菱電機株式会社 Semiconductor device and manufacturing method therefor and wireless communication apparatus
WO2019138895A1 (en) * 2018-01-11 2019-07-18 株式会社村田製作所 Module with built-in components and method for manufacturing same
CN113940008B (en) 2019-07-03 2023-06-16 株式会社村田制作所 High-frequency module and communication device
JP7151906B2 (en) * 2019-09-12 2022-10-12 株式会社村田製作所 ELECTRONIC COMPONENT MODULE AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT MODULE
CN114868244A (en) * 2019-12-27 2022-08-05 株式会社村田制作所 Module
US11658102B2 (en) * 2020-01-22 2023-05-23 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US20220066036A1 (en) * 2020-08-25 2022-03-03 Lumentum Operations Llc Package for a time of flight device
CN220189616U (en) * 2020-10-16 2023-12-15 株式会社村田制作所 Electronic component module, sub-module
WO2022230683A1 (en) * 2021-04-26 2022-11-03 株式会社村田製作所 High-frequency module and communication device
WO2023157747A1 (en) * 2022-02-16 2023-08-24 株式会社村田製作所 Circuit module
WO2023157748A1 (en) * 2022-02-16 2023-08-24 株式会社村田製作所 Circuit module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196857A (en) * 2004-12-16 2006-07-27 Murata Mfg Co Ltd Composite circuit substrate with case and manufacturing method thereof
US20060267159A1 (en) * 2004-02-13 2006-11-30 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing the same
JP2012028486A (en) * 2010-07-22 2012-02-09 Panasonic Corp Resin-sealed substrate device and method of manufacturing the same
US20130127025A1 (en) * 2011-11-22 2013-05-23 Samsung Electro-Mechanics Co., Ltd. Semiconductor package and manufacturing method thereof
CN106486464A (en) * 2015-08-28 2017-03-08 台湾积体电路制造股份有限公司 Semiconductor devices and its manufacture method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5146019B2 (en) * 2008-03-07 2013-02-20 パナソニック株式会社 High frequency module and electronic device using the same
JP5532141B2 (en) 2010-10-26 2014-06-25 株式会社村田製作所 Module substrate and module substrate manufacturing method
JP5400094B2 (en) * 2011-06-02 2014-01-29 力成科技股▲分▼有限公司 Semiconductor package and mounting method thereof
JP5768888B2 (en) 2011-09-07 2015-08-26 株式会社村田製作所 Module manufacturing method and terminal assembly
WO2016121491A1 (en) * 2015-01-30 2016-08-04 株式会社村田製作所 Electronic circuit module
CN107924877B (en) * 2015-08-11 2020-08-28 株式会社村田制作所 High-frequency module and method for manufacturing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060267159A1 (en) * 2004-02-13 2006-11-30 Murata Manufacturing Co., Ltd. Electronic component and method for manufacturing the same
JP2006196857A (en) * 2004-12-16 2006-07-27 Murata Mfg Co Ltd Composite circuit substrate with case and manufacturing method thereof
JP2012028486A (en) * 2010-07-22 2012-02-09 Panasonic Corp Resin-sealed substrate device and method of manufacturing the same
US20130127025A1 (en) * 2011-11-22 2013-05-23 Samsung Electro-Mechanics Co., Ltd. Semiconductor package and manufacturing method thereof
CN106486464A (en) * 2015-08-28 2017-03-08 台湾积体电路制造股份有限公司 Semiconductor devices and its manufacture method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111554674A (en) * 2020-05-15 2020-08-18 甬矽电子(宁波)股份有限公司 Package body with electromagnetic shielding function and packaging process
CN111554674B (en) * 2020-05-15 2022-02-08 甬矽电子(宁波)股份有限公司 Package body with electromagnetic shielding function and packaging process

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JPWO2019045088A1 (en) 2020-07-27
WO2019045088A1 (en) 2019-03-07

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