CN111009583A - Topcon结构电池及其制备方法 - Google Patents
Topcon结构电池及其制备方法 Download PDFInfo
- Publication number
- CN111009583A CN111009583A CN201911257166.0A CN201911257166A CN111009583A CN 111009583 A CN111009583 A CN 111009583A CN 201911257166 A CN201911257166 A CN 201911257166A CN 111009583 A CN111009583 A CN 111009583A
- Authority
- CN
- China
- Prior art keywords
- layer
- transparent conductive
- conductive film
- doped
- topcon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 239000002002 slurry Substances 0.000 claims abstract description 45
- 230000000903 blocking effect Effects 0.000 claims abstract description 30
- 230000005641 tunneling Effects 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 229910003437 indium oxide Inorganic materials 0.000 claims description 12
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 4
- 229910002425 LaScO3 Inorganic materials 0.000 claims description 4
- 229910003781 PbTiO3 Inorganic materials 0.000 claims description 4
- 229910020698 PbZrO3 Inorganic materials 0.000 claims description 4
- 229910002830 PrOx Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims description 4
- XGDBOJRURXXJBF-UHFFFAOYSA-M fluoroindium Chemical compound [In]F XGDBOJRURXXJBF-UHFFFAOYSA-M 0.000 claims description 4
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 4
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 claims 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 210000003537 structural cell Anatomy 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000011267 electrode slurry Substances 0.000 abstract description 8
- 230000000149 penetrating effect Effects 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 41
- 238000004140 cleaning Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911257166.0A CN111009583B (zh) | 2019-12-10 | 2019-12-10 | Topcon结构电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911257166.0A CN111009583B (zh) | 2019-12-10 | 2019-12-10 | Topcon结构电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111009583A true CN111009583A (zh) | 2020-04-14 |
CN111009583B CN111009583B (zh) | 2022-03-22 |
Family
ID=70115091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911257166.0A Active CN111009583B (zh) | 2019-12-10 | 2019-12-10 | Topcon结构电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111009583B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640826A (zh) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | 一种利用选择性接触导电的电池制备方法 |
CN113314630A (zh) * | 2021-04-21 | 2021-08-27 | 中国科学院宁波材料技术与工程研究所 | 一种含硅氧纳米晶层的多晶硅薄膜及其制备方法和应用 |
CN115732579A (zh) * | 2022-08-31 | 2023-03-03 | 江苏杰太光电技术有限公司 | 一种具有氮化钛层的钝化接触电池金属化结构 |
CN116487452A (zh) * | 2023-06-21 | 2023-07-25 | 天合光能股份有限公司 | 太阳能电池和太阳能电池的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019015827A1 (de) * | 2017-07-20 | 2019-01-24 | International Solar Energy Research Center Konstanz E. V. | Verfahren zur herstellung von pert solarzellen |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
CN110311011A (zh) * | 2019-05-17 | 2019-10-08 | 上海神舟新能源发展有限公司 | 太阳电池的制作方法 |
US20190312157A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
CN209658197U (zh) * | 2019-04-11 | 2019-11-19 | 深圳市捷佳伟创新能源装备股份有限公司 | 具有透明导电层的单多晶n型双面topcon电池 |
-
2019
- 2019-12-10 CN CN201911257166.0A patent/CN111009583B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019015827A1 (de) * | 2017-07-20 | 2019-01-24 | International Solar Energy Research Center Konstanz E. V. | Verfahren zur herstellung von pert solarzellen |
JP2019110185A (ja) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | 太陽電池の製造方法 |
US20190312157A1 (en) * | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
CN209658197U (zh) * | 2019-04-11 | 2019-11-19 | 深圳市捷佳伟创新能源装备股份有限公司 | 具有透明导电层的单多晶n型双面topcon电池 |
CN110311011A (zh) * | 2019-05-17 | 2019-10-08 | 上海神舟新能源发展有限公司 | 太阳电池的制作方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111640826A (zh) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | 一种利用选择性接触导电的电池制备方法 |
CN113314630A (zh) * | 2021-04-21 | 2021-08-27 | 中国科学院宁波材料技术与工程研究所 | 一种含硅氧纳米晶层的多晶硅薄膜及其制备方法和应用 |
CN115732579A (zh) * | 2022-08-31 | 2023-03-03 | 江苏杰太光电技术有限公司 | 一种具有氮化钛层的钝化接触电池金属化结构 |
CN116487452A (zh) * | 2023-06-21 | 2023-07-25 | 天合光能股份有限公司 | 太阳能电池和太阳能电池的制备方法 |
CN116487452B (zh) * | 2023-06-21 | 2023-10-27 | 天合光能股份有限公司 | 太阳能电池和太阳能电池的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN111009583B (zh) | 2022-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111009583B (zh) | Topcon结构电池及其制备方法 | |
US20220367739A1 (en) | Solar cell comprising a metal-oxide buffer layer and method of fabrication | |
US11264529B1 (en) | Solar cell and method for manufacturing the same | |
JP6350279B2 (ja) | 塗布型材料、太陽電池素子及び電界効果パッシベーション膜付シリコン基板 | |
CN110931604A (zh) | Topcon结构太阳能电池的制备方法 | |
CN105304749A (zh) | 太阳能电池及其制造方法 | |
CN110867516A (zh) | 新型基于钙钛矿和晶硅背钝化叠层太阳电池及其制造方法 | |
CN111834476B (zh) | 一种太阳能电池及其制备方法 | |
US20130048070A1 (en) | Tunnel photovoltaic | |
WO2023011653A1 (zh) | 钝化接触结构、其制备方法以及其应用的太阳能电池 | |
WO2024140473A1 (zh) | 一种太阳能电池及其制备方法 | |
CN110767772B (zh) | 局域接触钝化太阳电池的制备方法 | |
CN114050105A (zh) | 一种TopCon电池的制备方法 | |
US11942564B2 (en) | Laminated photovoltaic device, and production method | |
WO2014134515A1 (en) | High-efficiency, low-cost silicon-zinc oxide heterojunction solar cells | |
CN102969367A (zh) | 一种晶体硅太阳能电池p型硅背面钝化膜及其制备方法 | |
CN115176345A (zh) | 一种太阳能电池叠层钝化结构及其制备方法 | |
TW201818557A (zh) | 高光電變換效率太陽電池及高光電變換效率太陽電池之製造方法 | |
CN114744053B (zh) | 太阳能电池及生产方法、光伏组件 | |
CN113871493A (zh) | 基于原子层沉积技术的铝掺杂氧化钛薄膜及其制备方法 | |
CN102290450A (zh) | 一种n型晶体硅太阳能电池 | |
CN103107236B (zh) | 异质结太阳能电池及其制作方法 | |
TWI701841B (zh) | 太陽能電池、其表面鈍化結構及其表面鈍化方法 | |
CN114937707B (zh) | 一种电子钝化接触结构及晶硅太阳电池 | |
CN103928534B (zh) | 一种金属卤氧化物纳米薄膜/Si复合电池片及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Xiang Inventor after: Zhang Michao Inventor after: Yao Jun Inventor before: Zhang Michao Inventor before: Li Xiang Inventor before: Yao Jun |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: 9-6-2 Xinshuo Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |