CN110988814A

CN110988814A - X-frequency-band 2000-watt solid-state transmitter and system

Info

Publication number: CN110988814A
Application number: CN201911179873.2A
Authority: CN
Inventors: 沈金亮; 李�浩; 杨现志
Original assignee: Nanjing Changfeng Space Electronics Technology Co Ltd
Current assignee: Nanjing Changfeng Space Electronics Technology Co Ltd
Priority date: 2019-11-27
Filing date: 2019-11-27
Publication date: 2020-04-10
Anticipated expiration: 2039-11-27
Also published as: CN110988814B

Abstract

The invention discloses a 2000W solid-state transmitter and a system in an X frequency band, wherein the solid-state transmitter comprises a pre-amplifier assembly, a SIW power divider module, a final-stage amplifier assembly and a SIW power combiner module which are sequentially connected. The SIW power divider module adopts a four-stage structure, an E-surface 3dB branch waveguide directional coupler is used as a first stage and a second stage, a double-dipole fin line type waveguide-SIW converter is used as a third stage, and an SIW-double microstrip converter is used as a fourth stage; the network composition of the SIW power combiner module is the same as that of the SIW power divider module, and the work engineering is the reverse process of the SIW power divider module. The invention designs the X-frequency band power divider/synthesizer by adopting the SIW technology, and the SIW is a novel transmission line between planar transmission lines such as a metal waveguide and a microstrip line, has the similar propagation characteristic with the traditional metal waveguide, has the advantages of small transmission loss of the metal waveguide, high Q value and the like, has multiple advantages of a planar circuit, and is easy to integrate with other planar circuits.

Description

X-frequency-band 2000-watt solid-state transmitter and system

Technical Field

The invention relates to an X-frequency-band 2000-watt solid-state transmitter and a system, belonging to the technical field of radars, radar simulators and electronic countermeasures.

Background

At present, in equipment in the fields of radar, radar simulator, electronic countermeasure and the like, a transmitter unit mainly comprises a traveling wave tube transmitter and a solid-state amplifier transmitter, and the solid-state amplifier transmitter has the advantages of high reliability, high stability, long service life, wide working frequency band, quick start, simple and safe operation, fault softening and the like, and gradually becomes the leading development direction of the transmitting unit in a radar system.

For a solid-state amplifier transmitter, in order to obtain a power output of several kilowatts or even several tens of kilowatts, a power synthesis method is generally adopted to synthesize multiple paths of amplifier signals with lower power into a required high-power radiation signal, and there are two specific methods: firstly, a power synthesis technology based on a circuit or a waveguide is adopted, multi-path signals are subjected to power synthesis by using a synthesis network of the circuit or the waveguide, and then are radiated by an antenna; the second method is based on free space power synthesis technology, by adopting a space power synthesis antenna, multi-path power signals are directly radiated to a free space through an antenna unit, and by controlling the phase of each path of radiation of an amplifier, a high-power electromagnetic wave beam radiated directionally is directly synthesized in the free space.

Although the spatial synthesis technique has high synthesis efficiency, in a specific application field, the beam width is difficult to be widened, and a centralized circuit synthesis technique is required. The mainstream method of the circuit synthesis technology is to perform a multilevel binary tree synthesis technology, and the tree synthesis mode mainly comprises a microstrip circuit synthesis technology and a waveguide synthesis technology. The microstrip synthesis technology mainly comprises traditional Wilkinson synthesis, 3dB electric bridge and the like, and the waveguide synthesis technology comprises E-plane waveguide synthesis, H-plane waveguide synthesis, magic T synthesis, mirror image waveguide synthesis and the like. Waveguide synthesis is widely used in solid state amplifier transmitter systems due to its low synthesis loss and high efficiency.

At present, few inventions and devices are reported in the field of power combining, particularly in terms of outputting kilowatt-level high-power active transmitters.

Disclosure of Invention

The invention aims to solve the technical problem that an output kilowatt-level high-power active transmitter is lacked at present.

In order to achieve the technical purpose, the solid-state emission system adopts a modularized design concept, is convenient to assemble, maintain and produce in batches, and is designed and decomposed into a plurality of parts, wherein the whole solid-state emission system mainly comprises a pre-amplifier assembly, a SIW power distributor module, a final-stage amplifier assembly, a SIW power combiner module, a power supply module, a monitoring collection box and a heat dissipation system.

In one aspect, the invention provides a 2000w X-band solid state transmitter, comprising a pre-amplifier assembly, a SIW power splitter module, a final amplifier assembly and a SIW power combiner module, which are connected in sequence;

the prime amplifier assembly comprises a prime assembly shell, an output waveguide port and a heat dissipation system, wherein the prime assembly shell comprises a prime radio frequency amplifier link module and a control protection and feed module; the control protection and feed module is connected with the stage radio frequency amplifier link module;

the pre-stage radio frequency amplifier link module comprises a power supply input, a communication interface, a radio frequency input interface, a protection and feed circuit, a first X-band gallium arsenide high-gain amplifier P1, a second X-band gallium arsenide high-gain linear amplifier P2, a third X-band gallium arsenide medium-power linear amplifier P3, an isolator, an attenuator and a SIW-single microstrip converter, wherein the protection and feed circuit, the first X-band gallium arsenide high-gain amplifier P1, the second X-band gallium arsenide high-gain linear amplifier P; the concepts of high gain amplifiers and medium power linear amplifiers described herein will be clear to those skilled in the art and need not be explained in any greater detail.

The SIW power divider module adopts a four-stage structure, an E-surface 3dB branch waveguide directional coupler is used as a first stage and a second stage, a double-dipole fin line type waveguide-SIW converter is used as a third stage, and an SIW-double microstrip converter is used as a fourth stage;

the network composition of the SIW power combiner module is the same as that of the SIW power divider module, a four-stage structure is adopted, a SIW-double microstrip converter is used as a first stage, a double-dipole fin line type waveguide-SIW converter is used as a second stage, and an E-plane 3dB branch waveguide directional coupler is used as a third stage and a fourth stage.

Furthermore, the E-plane 3dB branch waveguide directional coupler is a four-port orthogonal element with directional transmission characteristics, and a preset coupling structure is arranged between the two transmission lines of the main line and the secondary line.

Further, the SIW-double microstrip transition comprises two identical gradient microstrip lines which are arranged on two sides of a central plane and are arranged on one port of the dielectric integrated waveguide.

Further, the dual-antipodal fin-line waveguide-SIW converter includes two identical antipodal fin lines disposed within a rectangular waveguide.

Further, the final amplifier assembly comprises at least one solid-state amplifier link, each solid-state amplifier link comprises an input end double-microstrip gradually-changed microstrip line, an isolator, a primary amplifier P1, a final amplifier P2, an output end double-microstrip gradually-changed microstrip line, a heat dissipation module and a control protection and feed circuit which are sequentially connected, the input end double-microstrip gradually-changed microstrip line, the primary amplifier P1, the final amplifier P2 and the output end double-microstrip gradually-changed microstrip line are sequentially connected with one another through the isolators, and the solid-state amplifier links are respectively connected with the control protection and feed circuit and the heat dissipation module.

In order to provide a 2000 watt solid-state transmitter in the X band, in the above technical solution, further, the pre-stage rf amplifier link module in the pre-stage amplifier assembly includes a 2 watt high gain amplifier P1 in gallium arsenide of X band, an 8 watt high gain linear amplifier P2 in gallium arsenide of X band, a 30 watt medium power linear amplifier P3 in gallium arsenide of X band, an isolator, an attenuator, and a SIW-single microstrip converter, which are connected in sequence;

the SIW power divider module adopts a four-stage structure, an E-surface 3dB branch waveguide directional coupler is used as a first stage and a second stage, a double-dipole fin line type waveguide-SIW converter is used as a third stage, and an SIW-double microstrip converter is used as a fourth stage; the number of the E-surface 3dB branch waveguide directional couplers of the first stage is 1, the number of the E-surface 3dB branch waveguide directional couplers of the second stage is 2, each E-surface 3dB branch waveguide directional coupler of the second stage is connected with 2 double-pole fin-line type waveguide-SIW converters, and each double-pole fin-line type waveguide-SIW converter is connected with 2 final-stage amplifier components;

the network composition of the SIW power combiner module is the same as that of the SIW power divider module, a four-stage structure is adopted, an SIW-double microstrip converter is used as a first stage, a double-dipole fin line type waveguide-SIW converter is used as a second stage, and an E-plane 3dB branch waveguide directional coupler is used as a third stage and a fourth stage; the network structure is symmetrical with the SIW power divider module;

further comprising 2 final amplifier modules, each amplifier module comprising 8 150 watt solid state amplifier chains;

each solid-state amplifier link comprises an input end double-microstrip gradual change microstrip line, an isolator, a 30-watt primary amplifier P1, a final-stage amplifier P2, an output end double-microstrip gradual change microstrip line, a heat dissipation module and a control protection and feed circuit which are sequentially connected, the input end double-microstrip gradual change microstrip line, the primary amplifier P1, the final-stage amplifier P2 and the output end double-microstrip gradual change microstrip line are sequentially connected with one another through the isolators, and the solid-state amplifier links are respectively connected with the control protection and feed circuit and the heat dissipation module.

And further, synthesizing 2 paths of output by every four paths of output of the final-stage power amplifier component, and designing 8 paths of connection bent waveguide structures.

On the other hand, the invention provides an X-frequency-band 2000-watt solid-state transmitter system, which is characterized by comprising the X-frequency-band 2000-watt solid-state transmitter system, a power supply module, a control protection and feed system and a heat dissipation module, wherein the control protection and feed system is respectively connected with the heat dissipation module and the X-frequency-band 2000-watt solid-state transmitter; and the power supply module is respectively connected with the X-frequency-band 2000-watt solid-state transmitter system, the control protection and feed system and the heat dissipation module.

Furthermore, the system also comprises a monitoring collection box, and the monitoring collection box is respectively connected with the power supply module and the power amplifier system.

The invention has the following beneficial technical effects:

the invention adopts the SIW technology to design the X-frequency band power distributor/synthesizer, and the SIW is a novel transmission line between planar transmission lines such as a metal waveguide and a microstrip line, has the similar propagation characteristic with the traditional metal waveguide, has the advantages of small transmission loss of the metal waveguide, high Q value and the like, has a plurality of advantages of a planar circuit, and is easy to integrate with other planar circuits;

the pre-amplifier assembly, the SIW power divider module, the final-stage amplifier assembly and the SIW power combiner module adopt a modular design concept, so that the assembly, the maintenance and the batch production are convenient;

by placing the X-frequency-band 2000-watt solid-state transmitter, the monitoring collection box and the power supply module on different layers, the system structure of the X-frequency-band 2000-watt solid-state transmitter is designed in a layered mode, effective isolation among all levels of modules is achieved, crosstalk among the modules is reduced, electromagnetic compatibility of the system is improved, the layered design is omitted, the system isolation degree is about 60dB, and 90dB can be achieved after the layered design.

Drawings

FIG. 1 is a schematic diagram of an X-band 2000W solid-state transmitter in accordance with an embodiment of the present invention;

FIG. 2 is a schematic diagram of a 2000 Watt solid state transmitter system for X band power in accordance with an embodiment of the present invention;

FIG. 3 is a block diagram of a solid state transmitter with 2000 Watts of power in the X frequency band in accordance with an embodiment of the present invention;

FIG. 4 is a schematic diagram of an X-band preamplifier assembly according to an embodiment of the invention;

FIG. 5 is a front view of an X-band preamplifier assembly according to an embodiment of the invention;

FIG. 6 is a block diagram of the main structure of the pre-amplifier module of the X-band according to the embodiment of the present invention;

FIG. 7 is a schematic diagram of a SIW-power distribution/synthesis network according to an embodiment of the present invention;

FIG. 8 is a block diagram of an X-band E-plane 3dB branch waveguide directional coupler according to an embodiment of the present invention;

FIG. 9 is an insertion loss curve of the X-band E-plane 3dB branch waveguide directional coupler according to the embodiment of the present invention;

fig. 10 is a diagram of an X-band eight-way power divider according to an embodiment of the present invention;

fig. 11 is a structural diagram of an X-band SIW-dual microstrip line converter according to an embodiment of the present invention;

fig. 12 is an insertion loss curve of the SIW-dual microstrip line converter of the X band according to the embodiment of the present invention;

FIG. 13 is a diagram of an X-band dual-antipodal fin-line waveguide-SIW converter according to an embodiment of the invention;

FIG. 14 is a schematic diagram of an X-band final power amplifier module according to an embodiment of the present invention;

fig. 15 is a structure diagram of the final power amplifier module in the X-band according to an embodiment of the present invention;

fig. 16 is a main structure diagram of the final power amplifier module in the X-band according to the embodiment of the present invention;

fig. 17 is an integrated structure diagram of the final stage power amplifier module in the X-band according to the embodiment of the present invention;

FIG. 18 is a diagram of an X-band 8-way curved waveguide structure according to an embodiment of the present invention;

FIG. 19 is a block diagram of an X-band power combiner in accordance with an embodiment of the present invention;

fig. 20 is a diagram of a main body structure of an X-band power combiner according to an embodiment of the present invention;

fig. 21 is a diagram of the entire structure of an X-band wide beam transmitter system according to an embodiment of the present invention, in which 21(a) is a front view of the X-band wide beam transmitter system, and 21(b) is a rear view of the X-band wide beam transmitter system; 21(c) is a side view of an X-band broad beam transmitter system;

FIG. 22 is a schematic structural diagram of a control protection and power feeding module according to an embodiment of the present invention;

the labels in the figure are:

in fig. 3: 101. a preamplifier assembly; 102. a SIW power splitter module; 103. a final amplifier group; 104. a SIW power combiner module; 105. a heat dissipation system;

in fig. 5 to 6: 1. a radio frequency amplifier link section; 2. a control protection and feeding part; 3. a heat dissipation system; 4. a backing assembly housing; 5. an output waveguide port; 6. a heat dissipation air duct; 7. A power input and communication interface; 8. a radio frequency input; 9. a control protection and feed circuit; 10. a protection and feed circuit; 11. a 2 watt high gain amplifier P1; 12. 8 high gain amplifier P2; 13. 30 gain amplifiers P3; 14. an isolator; 15. SIW-single microstrip transducer;

in fig. 8: 16. a directional coupler input waveguide port; 17. a directional coupler output waveguide port; 18. a directional coupler secondary output waveguide port;

in fig. 10: 19. e-plane 3dB branch waveguide directional coupler; 20. a power divider waveguide port input; 21. the power divider waveguide port outputs;

in fig. 11: 22. the converter inputs the standard waveguide port; 23. a converter double microstrip gradual change microstrip line; 24. the converter outputs a test interface;

in fig. 15 to 17:

25. an input end double microstrip gradual change microstrip line 1; 26. an isolator; 27. a 30 watt amplifier P1; 28. A 150 watt final amplifier P2; 29. the output end is a double microstrip gradual change microstrip line; 30. a heat dissipation module; 31. controlling protection and feeding; 32. a power input and CAN communication interface; 33. an output waveguide port; 34. a dual-antipodal finline waveguide-SIW converter;

fig. 18 to 20:

35. a synthesizer input waveguide port; 36. e-plane 3dB branch waveguide directional coupler; 37. a synthesizer output waveguide port; 38. an absorbent body; 39. an output waveguide; 40. inputting a bent waveguide; 41. Outputting by a bent waveguide;

in fig. 21: 42. an X-band 2000 watt transmitter; 43. monitoring the aggregation box; 44. a power supply module; 45. an orientation state transmission device; 46. a heat dissipation module; 47. a pitch state transmission; 48. and (4) outputting by the inverted horn antenna.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiment is only one embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

At present, the synthesis modes of a kilowatt-level high-power X-band solid-state power amplifier are various, including Wilkinson microstrip synthesis and waveguide synthesis, and a mode of combining a microstrip and a waveguide is adopted. The solid-state power amplifier of the X wave band 2000W is designed by adopting the SIW technology. The SIW is a novel transmission line between planar transmission lines such as a metal waveguide and a microstrip line, has the propagation characteristic similar to that of the traditional metal waveguide, has the advantages of small transmission loss of the metal waveguide, high Q value and the like, has the advantages of a planar circuit, is easy to integrate with other planar circuits, and is low in cost and easy to realize. Many articles use SIW techniques for designing millimeter wave synthesis, mostly in the theoretical design and experimental demonstration stages. The SIW technology is applied to the field of X-band high-power synthesis, a large amount of design simulation and experimental demonstration are carried out, and finally, reliable products are delivered for use.

For the sake of simplicity, common technical knowledge known to those skilled in the art is omitted in the following.

The invention is designed for meeting the requirement of a radar simulator system on an X-frequency (9-10GHz) band solid-state amplifier transmitter system, and mainly adopts a novel medium integrated waveguide (SIW) synthesis method to realize the output kilowatt-level high-power active transmitter. As a novel transmission line structure, SIW (Substrate Integrated Waveguide) integrates a series of advantages of conventional rectangular waveguides and microstrip lines, and has the advantages of relatively wide bandwidth, high quality factor, extremely low loss, small volume, light weight, and easy processing and integration.

The specific embodiment provides an X-band 2000-watt solid-state transmitter (see fig. 3), which comprises a pre-amplifier assembly 101, a SIW power divider module 103, a final-stage amplifier assembly 103, a SIW power combiner module 104, and a heat dissipation system 105.

A preamplifier assembly (see fig. 4, 5 and 6) comprising a preamplifier housing 4, an output waveguide port 5 and a heat dissipation system 3, the preamplifier housing comprising a preamplifier link module 1 and a control protection and feed module 2;

the pre-stage radio frequency amplifier link module comprises a power supply input and communication interface, a radio frequency input interface 7, a protection and feed circuit 10, an X-band gallium arsenide high gain amplifier P1(11), an X-band arsenic high gain linear amplifier P212, an X-band gallium arsenide medium power linear amplifier P313, an isolator 14, an attenuator (not shown) and a SIW-single microstrip converter 15 which are sequentially connected;

the network composition of the SIW power combiner module is the same as that of the SIW power divider module, a four-stage structure is adopted, the SIW-double microstrip converter serves as a first stage, the double-pair-pole fin line type waveguide-SIW converter serves as a second stage, and the E-plane 3dB branch waveguide directional coupler serves as a third stage and a fourth stage. Fig. 3 shows that a pre-amplifier assembly 101, a SIW power splitter module 102, a final amplifier group 103, and a SIW power combiner module 104 in an X-band 2000-watt solid-state transmitter adopt a layered design, where the pre-amplifier assembly 101 is located at a first layer, the SIW power splitter module 102 is located at a second layer, the final amplifier group 103 is located at a third layer, the SIW power combiner module 104 is located at a last layer, and the heat dissipation system 105 is located at a side of the X-band 2000-watt solid-state transmitter. Due to the layered design, effective isolation among modules at all levels is realized, crosstalk among the modules is reduced, and the electromagnetic compatibility of the system is improved.

The invention designs the power distribution/synthesizer of the X frequency band by adopting the SIW technology. The Substrate Integrated Waveguide (Substrate Integrated Waveguide) (SIW) of the SIW-double microstrip line converter is a planar Waveguide structure developed in recent years, is a novel transmission line between a metal Waveguide and a planar transmission line such as a microstrip line, has the similar propagation characteristic with the traditional metal Waveguide, has the advantages of small transmission loss of the metal Waveguide, high Q value and the like, has a plurality of advantages of a planar circuit, and is easy to integrate with other planar circuits. However, few inventions and devices of SIW in the field of power combining, particularly in terms of high-power active transmitters outputting in the kilowatt range, are currently reported.

In order to provide an output kilowatt-level high-power active transmitter, the invention provides a four-stage structure (shown in figure 1), and all components of a power divider/synthesizer are completely consistent. The E-plane 3dB branch waveguide directional coupler serves as a first stage and a second stage, the double-dipole fin-line waveguide-SIW converter serves as a third stage, and the SIW-double microstrip converter serves as a fourth stage. The power distribution network works on the following principle: radio frequency signals are input from an input port of the rectangular waveguide, divided into four paths through three E-surface 3dB branch waveguide directional couplers, then formed into eight paths through the double-antipodal fin-line type waveguide-SIW converter, and finally enter the SIW-double-microstrip converter to be divided into sixteen paths. The power combining network has the same composition as the power distribution network, and the working principle of the power combining network is the inverse process of the working principle.

Fig. 7 shows a schematic diagram of an X-band SIW-power distribution/synthesis network.

The branch waveguide directional coupler of the E-plane 3dB branch waveguide directional coupler is a four-port orthogonal element with directional transmission characteristics, and realizes the directional output of a main waveguide by arranging a proper coupling structure between two transmission lines of a main line and a secondary line and depending on the mutual interference of waves, transmitted signals are offset in opposite phases on an isolation port, and are superposed in phase on a coupling port. The structure diagram is shown in fig. 8, and fig. 8 shows the structure diagram of the X-band E-plane 3dB branch waveguide directional coupler of the embodiment. In fig. 8 there are shown 1 directional coupler input waveguide port 16, an output waveguide port 17 through the input waveguide port, one transmission line between the input waveguide port and the through output waveguide port, and another transmission line arranged parallel to the transmission line and between the two transmission lines there is arranged a coupling structure as shown, the other transmission line communicating with the directional coupler secondary output waveguide port 18.

Fig. 9 shows the insertion loss curve of the X-band E-plane 3dB branched waveguide directional coupler. The insertion loss index of the E-plane 3dB branch waveguide directional coupler influences the synthesis efficiency of the transmitter, and the smaller the insertion loss is, the smaller the loss power is, and the larger the power converted into synthesis output is. Fig. 9 shows that the output power is 2000 watts, and if the insertion loss is 0.5dB, the output power is reduced by about 221 watts.

Fig. 10 shows a structure diagram of an eight-path power splitter formed by the X-band E-plane 3dB branch waveguide directional coupler according to this embodiment. In fig. 10, one power splitter waveguide input port 20 is connected to two E-plane 3dB branch waveguide directional couplers 19, and a total of 8 power splitter waveguide output ports 21 are connected.

On the basis of the above embodiment, the E-plane 3dB branch waveguide directional coupler 19 is a four-port orthogonal element having a directional transmission characteristic, and a predetermined coupling structure is provided between two transmission lines of the main line and the sub line.

On the basis of the above embodiment, the SIW-dual microstrip transition includes two identical tapered microstrip lines that are symmetrically disposed on both sides of a central plane disposed at one port of the dielectric integrated waveguide.

On the basis of the above embodiment, the dual-antipodal fin-line waveguide-SIW converter includes two identical antipodal fin lines disposed within a rectangular waveguide. In the dual-antipodal fin line type waveguide-SIW converter of the embodiment shown in fig. 13, two identical antipodal fin lines, that is, the dual-microstrip tapered microstrip lines 22 of the converter, are symmetrically disposed in the rectangular waveguide, and the converter is communicated with the converter input standard waveguide port 22, because the TE10 mold for waveguide transmission has high symmetry and the field distribution is symmetrical about the central plane, the electric fields at the positions of the two antipodal fin lines are equal in magnitude and same in direction. The two antipodal fin lines respectively rotate the direction of an electric field in a linear gradual change mode, and simultaneously, the conversion from the high impedance of the waveguide to the low impedance of the SIW is realized. According to the symmetry of the waveguide mode and the antipodal fin line, the two SIW branches have equal amplitude and same phase, and the incident power is equally divided into two paths.

On the basis of the above embodiment, the final amplifier assembly includes at least one solid-state amplifier link, each solid-state amplifier link includes an input end double microstrip tapered microstrip line (25, 29), an isolator 26, a primary amplifier P127, a final amplifier P228, an output end double microstrip tapered microstrip line 29, a heat dissipation module 30 and a control protection and feed circuit 31, which are connected in sequence, the input end double microstrip tapered microstrip line (25, 29), the primary amplifier P127, the final amplifier P228 and the output end double microstrip tapered microstrip line 29 are connected in sequence through the isolator 26, and the solid-state amplifier links are respectively connected with the control protection and feed circuit and the heat dissipation module.

The transmitter structure design of the X-frequency band (9-10GHz) solid-state amplifier provided by the invention has the following advantages:

1) the design idea of compactness and miniaturization is adopted, so that the detection and debugging are convenient, the system integration is easy, and the method is suitable for various system platforms;

2) the structure design adopts an integrated heat dissipation system, the heat dissipation efficiency is high, the volume is small, the weight is light, the heat dissipation pressure of the system is reduced, and the cost is saved;

3) and a cable-free design is adopted, so that the path loss is reduced, and the power synthesis efficiency of the system is improved.

To provide an X-band 2000 watt solid state transmitter, see fig. 1, 2 and 3. Fig. 1 shows a schematic diagram of a 2000 watt solid-state transmitter for the X-band power of this embodiment. Fig. 2 shows a schematic diagram of a 2000-watt X-band solid-state transmitter system according to this embodiment. Fig. 3 shows a block diagram of a solid-state transmitter of 2000 watts power in the X-band of this embodiment.

On the basis of the above embodiments, the preamplifier assembly comprises a radio frequency amplifier chain, a control protection and a feeding and heat dissipation system. The domestic X-waveband gallium arsenide 2-watt high-gain amplifier P1, the X-waveband gallium arsenide 8-watt high-gain linear amplifier P2, the X-waveband gallium arsenide 30-watt medium-power linear amplifier P3, the isolator, the attenuator and the SIW-single microstrip converter form a radio frequency amplifier link. Fig. 4 shows a schematic diagram of an X-band preamplifier assembly. Fig. 5 shows a block diagram of an X-band preamplifier assembly. Fig. 6 shows an internal layout of the X-band preamplifier assembly.

The SIW-microstrip line converter can realize the conversion between two transmission lines by adding a section of gradually changed microstrip line between the SIW and the 50 ohm microstrip line. The field distribution of the SIW can find that the main mode (TE10 mode) of its transmission has symmetry, i.e. the fields on both sides of the central plane are symmetrical, and by using the idea of the double-ridge waveguide converter, two tapered microstrip lines are symmetrically placed in the tapered microstrip line converter to form the SIW-double microstrip line converter shown in fig. 11. In the converter shown in fig. 11, two identical tapered microstrip lines are symmetrically disposed at one port of the SIW, and because TE10 mode transmitted by the SIW is symmetric about the central plane, the electric fields at the positions of the two tapered microstrip lines are equal in magnitude and same in direction. Fig. 11 shows a structure diagram of an X-band SIW-dual microstrip line converter. Fig. 12 shows an insertion loss index curve of the X-band SIW-dual microstrip line converter.

According to the analysis, the four-way broadband power divider shown in fig. 12 can be formed by combining the dual-dipole fin-line waveguide-SIW converter and the SIW-dual microstrip line converter. The whole four-path power divider of the embodiment is composed of two stages of power dividers, wherein the first stage of power divider is composed of a double-antipodal fin line waveguide-SIW converter, the second stage of power divider is composed of two SIW-double microstrip line converters, and four paths of power division can be realized by cascading the two stages of power dividers. According to the reciprocity principle, the power divider in turn forms a combiner, and the two are connected back to form a four-way power divider/combiner based on the double-pair-pole fin-line waveguide-SIW converter.

This embodiment contains 2 final amplifier modules, each containing 8 150 watt solid state amplifier chains, for a total of 16. Each amplification link comprises a double microstrip gradual change microstrip line 1, an isolator, a 30 watt amplifier P1, a final amplifier P2, a double microstrip gradual change microstrip line 2, a heat dissipation module, control protection and feed. A solid-state power amplifier system comprises 16 radio frequency amplification links, a single link form of driving a 150 watt amplifier by a 30 watt amplifier is finally designed through a large amount of time experience, and the method can be popularized to circuit designs of other frequency bands by designing the form to have good circuit stability, reasonable power and gain distribution and high cost performance.

The prime amplifier assembly of the embodiment adopts the most advanced domestic X-frequency-band gallium nitride power tube, the maximum power output of the last-stage monotube reaches 150W, the frequency range is 9-10.2GHz, the maximum duty ratio is 30%, the maximum pulse width is 1ms, and the power efficiency is 40%.

150W solid-state amplifier chain is big ", carry out each grade gain and the reasonable distribution of power of circuit, avoid the principle of" pushing greatly ", for example: the push stage amplifier P1, selecting a low power 30W amplifier, can just push the final amplifier P2, 150W, thus avoiding the situation that P2 burns out due to the P1 being selected too big. In addition, the total gain of the push-stage amplifier P1 and the final-stage amplifier P2 is selected not to exceed the isolation of the radio frequency and the radio frequency output of the whole assembly, and is generally good at 40dB, so that the designed circuit is high in stability and reliability, and convenient to debug and maintain.

Fig. 14 shows a schematic diagram of the final amplifier assembly of this embodiment. Fig. 14 shows that the final amplifier assembly comprises 8 solid-state amplifier links, each solid-state amplifier link comprises an input end double microstrip tapered microstrip line 25, an isolator, a primary amplifier, a final amplifier, an output end double microstrip tapered microstrip line 29, a heat dissipation module 30 and a control protection and feed circuit 31 which are connected in sequence, the input end double microstrip tapered microstrip line 25, a 30 watt primary amplifier 27, a 150 final amplifier 28 and the output end double microstrip tapered microstrip line are connected with each other sequentially through the isolator 26, and the solid-state amplifier links are respectively connected with the control protection and feed circuit 31 and the heat dissipation module 30.

Fig. 15 is a block diagram showing a single final amplifier module of this embodiment.

Fig. 15 shows that a heat dissipation module 30 is arranged on the bottom surface of the final amplifier assembly, power input and CAN communication interfaces 32 are arranged on both sides of the final amplifier assembly, an input end double microstrip tapered microstrip line 25 and an output end double microstrip tapered microstrip line 29 are respectively arranged on both sides of the amplifier assembly, and an isolator 26, a 30 watt amplifier P127 and a 150 watt final amplifier P2 are sequentially arranged at the middle position of the assembly at intervals. The structure is compact, the volume is small, and the carrying and debugging are convenient.

Fig. 16 is a main body structural view showing a single final amplifier module of this embodiment. Fig. 17 shows an integrated structure diagram of the final amplifier assembly of this embodiment.

The SIW power combiner module of this embodiment still adopts the SIW technology to design the X-band power combiner, and the final power amplifier component outputs 16 paths of 150 watt power signals, which are converted into 8 paths of signals by the dual-antipodal fin line waveguide-SIW converter 10 to be combined and output, and then connected to the X-band power combiner through 8 paths of connection bent waveguides of the X-band, and finally outputs 2000 watt high-power signals.

In order to reduce the volume, every four outputs of the power amplifier component are synthesized into 2 outputs, and 8 connecting bent waveguide structures are designed.

The X-frequency-band power synthesizer realizes high-power output, the isolation end adopts a wedge-shaped wave-absorbing material as an absorber, and the absorber with a special structure is designed for the final output end absorber, so that the power tolerance is improved. The X-frequency-band power synthesizer of the embodiment realizes high-power output, the isolation end adopts a wedge-shaped wave-absorbing material as an absorber, and the absorber with a special structure is designed for the final output end absorber, so that the power tolerance capability is improved.

FIG. 18 shows a structure of an 8-way junction waveguide in this example. Fig. 19 shows a structure diagram of the X-band power combiner according to this embodiment. Fig. 20 is a diagram showing a main body structure of the X-band power combiner according to this embodiment. Fig. 20 includes 8 power splitter waveguide input ports 35, each connected to two E-plane 3dB branched waveguide directional couplers 36 via a bent waveguide, and two E-plane 3dB branched waveguide directional couplers further connected to a combiner output waveguide port 37. Here the bend input 40 and the bend output 41 of the bend are seen in fig. 19.

The specific embodiment provides an X-band 2000-watt solid-state transmitter system, which comprises the X-band 2000-watt solid-state transmitter provided by the above embodiment, a power supply module, a control protection and feed system and a heat dissipation module, wherein the power supply module is respectively connected with the X-band 2000-watt solid-state transmitter system, the control protection and feed system and the heat dissipation module.

The present embodiment employs domestic advanced power supply modules, control protection and feed systems, which may be purchased from existing products or developed and designed according to the prior art, and will not be described in detail herein.

1. The power supply module 44 has functions of:

the power factor correction of the self-contained PFC can reduce the influence of harmonic waves on a system.

The voltage, current and temperature of the power module may be displayed through the bus.

The output voltage of the power supply module is adjustable in a wide range (22V-36V).

The power supply module supports the parallel function, is convenient for backup, improves the system redundancy and improves the system reliability.

And a separating device is adopted, full digital control is carried out, and the power supply efficiency and power density change are detected.

Controlling protection and feed system functions: the circuit comprises a 16-path current detection function; a 16-way voltage detection function; 8-path temperature detection function; a 16-way leakage regulation function (can work in a conduction mode all the time); the modulation adaptive voltage range is 9-80V, the output current is 0-60A, the modulation degree front edge is less than 80ns, the modulation back edge is less than 100ns, and the repetition frequency is 100 KHz; the 16-path grid voltage is adjustable (online adjustment and negative pressure linkage missing adjustment); the bus interface is used for setting threshold, overvoltage, overcurrent and overtemperature threshold and storing the threshold locally; the system reset function is provided; the method has the function of updating the program on line; over pulse width and over duty cycle protection; and the working current real-time display function.

The circuit design of the control and the feeding has innovation in specific embodiments. The functions of control, communication, protection, program online update and the like are realized on the same feed board, and the design disclosed at present is very few.

In order to detect and protect the power amplifier core device in real time, a control feed protection circuit is designed. The control and measurement circuit board mainly comprises a DC/DC conversion circuit, a voltage monitoring and protecting circuit, a current monitoring and protecting circuit, a time sequence protecting circuit, an over-temperature monitoring and protecting circuit, a power detecting circuit, a monitoring communication circuit (fault judgment, summary and shutoff) and a reset circuit.

The functions of the control and test circuit board are as follows:

input voltage: 32V plus or minus 15 percent;

gate voltage: the online voltage of-5V-0V is continuously adjustable;

voltage monitoring: detecting the voltage of each amplifier;

current monitoring: detecting the current of each amplifier;

temperature monitoring: detecting the temperature of each path of amplifier;

and (4) protection function: the device has the functions of overvoltage, undervoltage, overcurrent and overtemperature protection, timing protection and gate voltage and drain modulation interlocking;

threshold setting: overvoltage, undervoltage, overcurrent and overtemperature thresholds are set through a CAN bus and are stored locally (CAN bus communication is described in a measurement and control communication circuit section);

a reset function: the system has a system reset function, and a watchdog reset chip is adopted to realize the reset function; and (3) updating the program: the method has the function of updating the program online.

The control and test circuit board is designed to simultaneously check 32 analog input signals, 4-channel function multiplexing isolation input signals (compatible with TTL, optocoupler and contact signals) and 2-channel function multiplexing isolation output channels. The communication aspect supports CAN communication. The schematic diagram of the power control circuit board is shown in FIG. 22.

Monitoring collection box 43: the monitoring and collecting device has a monitoring state collecting function, adopts a bus form, and uploads and delivers a large amount of data through an optical fiber or network cable form according to the working state and the control state of each level of module through a monitoring and collecting box.

The heat dissipation module 46 functions: the power amplifier consists of 5 special fans and 3 radiators, can timely emit heat of a system of approximately 400 watts, and ensures that the power amplifier stably works at the high temperature of +60 ℃.

X frequency range 2000W solid state transmission system: and (3) interconnecting the X-frequency-band 2000-watt solid-state transmitter, the power supply module, the monitoring collection box and the heat dissipation system according to the system wiring rule, and installing the system to the turntable system. The X-frequency-band 2000-watt solid-state transmitter, the monitoring collection box and the power supply module are arranged on different layers, and the system structure of the X-frequency-band 2000-watt solid-state transmitter is designed in a layered mode, so that effective isolation among all levels of modules is achieved, crosstalk among the modules is reduced, the electromagnetic compatibility of the system is improved, the layered design is avoided, the system isolation degree is about 60dB, and 90dB can be achieved after the layered design. Preferably, the CAN port communication method is applied to a power amplifier system, a power supply, a power amplifier and monitoring are gathered and networked for control, and the working state of any component in the system CAN be monitored timely, positioned and cleared.

The transmitter system is placed on the servo turntable structure, so that the transmitting system flexibly moves in the pitching direction and the azimuth direction, and the half-power beam width index of the system antenna is realized.

A turntable system implementation including an azimuth state actuator 45 and a pitch state actuator 47; the azimuth is covered by 0-360 degrees, and the rotation is carried out by 0-90 degrees in pitching;

the inverted horn antenna 48 is adopted, so that the standing-wave ratio is superior, and the high power is borne;

the maximum radiation power is more than 100 KW;

the X-frequency band wide beam transmitting branch adopts a solid-state transmitter to widen a beam antenna form so as to meet the requirements of a system on equivalent radiation power and coverage of an airspace range, specific indexes, azimuth half-power beam width: not less than 80 degrees; pitch half power beamwidth: not less than 80 degrees. The specific half-power beam width of the X-band wide-beam antenna is shown in table 1.

TABLE 1X-BAND WIDE BEAM ANTENNA SEMI-POWER BEAM WIDTH METER

The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.

Claims

An X-band 2000-watt solid state transmitter, comprising:

the power divider comprises a front-stage amplifier assembly, a SIW power divider module, a final-stage amplifier assembly and a SIW power combiner module which are connected in sequence;

the prime amplifier assembly comprises a prime assembly shell, an output waveguide port and a heat dissipation system, wherein the prime assembly shell comprises a prime radio frequency amplifier link module and a control protection and feed module connected with the prime radio frequency amplifier link module;

the pre-stage radio frequency amplifier link module comprises a power supply input, a communication interface, a radio frequency input interface, a protection and feed circuit, a first X-band gallium arsenide high-gain amplifier, a second X-band gallium arsenide high-gain linear amplifier, a third X-band gallium arsenide medium-power linear amplifier, an isolator, an attenuator and a SIW-single microstrip converter, wherein the protection and feed circuit, the first X-band gallium arsenide high-gain amplifier, the second X-band gallium arsenide high-gain linear amplifier, the third X;

the SIW power divider module adopts a four-stage structure, an E-surface 3dB branch waveguide directional coupler is used as a first stage and a second stage, a double-dipole fin line type waveguide-SIW converter is used as a third stage, and an SIW-double microstrip converter is used as a fourth stage;

the network composition of the SIW power combiner module is the same as that of the SIW power divider module, a four-stage structure is adopted, a SIW-double microstrip converter is used as a first stage, a double-dipole fin line type waveguide-SIW converter is used as a second stage, and an E-plane 3dB branch waveguide directional coupler is used as a third stage and a fourth stage.
2. The X-band 2000 watt solid-state transmitter of claim 1 wherein the E-plane 3dB branch waveguide directional coupler is a four-port quadrature element with directional transmission characteristics, by providing a predetermined coupling structure between the two transmission lines of the main line and the secondary line.
3. The X-band 2000w solid state transmitter of claim 1, wherein the SIW-dual microstrip transition comprises two identical tapered microstrip lines disposed symmetrically on both sides of a central plane at one port of a dielectric integrated waveguide.
4. The X-band 2000 watt solid state transmitter of claim 1 wherein the dual antipodal finline waveguide-SIW converter comprises two identical antipodal finlines disposed within a rectangular waveguide.
5. The X-band 2000w solid state transmitter of claim 1, wherein the final amplifier assembly comprises at least one solid state amplifier link, each solid state amplifier link comprising an input end dual microstrip tapered microstrip, an isolator, a primary amplifier, a final amplifier, an output end dual microstrip tapered microstrip, a heat sink module and a control protection and feed circuit connected in sequence, the input end dual microstrip tapered microstrip, the primary amplifier, the final amplifier and the output end dual microstrip tapered microstrip being connected to each other in sequence via the isolators, the solid state amplifier links being connected to the control protection and feed circuit and the heat sink module, respectively.
6. The X-band 2000w solid state transmitter of claim 1, wherein the pre-rf amplifier link module in the pre-amplifier assembly comprises a power linear amplifier P3 in X-band gaas 30 w, an isolator, an attenuator, and a SIW-single microstrip converter, sequentially connected to an X-band gaas 2 w high gain amplifier P1, an X-band gaas 8 w high gain linear amplifier P2;

the SIW power divider module adopts a four-stage structure, an E-surface 3dB branch waveguide directional coupler is used as a first stage and a second stage, a double-dipole fin line type waveguide-SIW converter is used as a third stage, and an SIW-double microstrip converter is used as a fourth stage; the number of the E-surface 3dB branch waveguide directional couplers of the first stage is 1, the number of the E-surface 3dB branch waveguide directional couplers of the second stage is 2, each E-surface 3dB branch waveguide directional coupler of the second stage is connected with 2 double-pole fin-line type waveguide-SIW converters, and each double-pole fin-line type waveguide-SIW converter is connected with 2 final-stage amplifier components;

the network composition of the SIW power combiner module is the same as that of the SIW power divider module, a four-stage structure is adopted, an SIW-double microstrip converter is used as a first stage, a double-dipole fin line type waveguide-SIW converter is used as a second stage, and an E-plane 3dB branch waveguide directional coupler is used as a third stage and a fourth stage; the network structure is symmetrical with the SIW power divider module;

further comprising 2 final amplifier modules, each amplifier module comprising 8 150 watt solid state amplifier chains;

each solid-state amplifier link comprises an input end double-microstrip gradual change microstrip line, an isolator, a 30-watt primary amplifier P1, a final-stage amplifier P2, an output end double-microstrip gradual change microstrip line, a heat dissipation module and a control protection and feed circuit which are sequentially connected, the input end double-microstrip gradual change microstrip line, the primary amplifier P1, the final-stage amplifier P2 and the output end double-microstrip gradual change microstrip line are sequentially connected with one another through the isolators, and the solid-state amplifier links are respectively connected with the control protection and feed circuit and the heat dissipation module.
7. The X-band 2000w solid state transmitter of claim 1, wherein the final power amplifier module combines 2 outputs for every four outputs, and 8 connecting bent waveguide structures are designed.
The X-band 2000-watt solid-state transmitter system is characterized by comprising the X-band 2000-watt solid-state transmitter, a power supply module, a control protection and feed system and a heat dissipation module, wherein the control protection and feed system is respectively connected with the heat dissipation module and the X-band 2000-watt solid-state transmitter according to any one of claims 1 to 7; and the power supply module is respectively connected with the X-frequency-band 2000-watt solid-state transmitter, the control protection and feed system and the heat dissipation module.
9. The X-band 2000 watt solid state transmitter system of claim 8 further comprising a monitoring aggregation box connected to a power supply module and the power amplifier system, respectively.
10. The X-band 2000 watt solid state transmitter system of claim 9 wherein the X-band 2000 watt solid state transmitter, the monitoring collection box, and the power supply module are placed on different layers.