CN110970308B - Thin film transistor and manufacturing method of heterojunction active layer thereof - Google Patents

Thin film transistor and manufacturing method of heterojunction active layer thereof Download PDF

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Publication number
CN110970308B
CN110970308B CN201811160267.1A CN201811160267A CN110970308B CN 110970308 B CN110970308 B CN 110970308B CN 201811160267 A CN201811160267 A CN 201811160267A CN 110970308 B CN110970308 B CN 110970308B
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channel layer
ink
front channel
thin film
layer
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CN110970308A (en
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邵霜霜
梁坤
罗慢慢
赵建文
崔铮
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Thin Film Transistor (AREA)

Abstract

The invention discloses a thin film transistor and a manufacturing method of a heterojunction active layer thereof, wherein a wetting agent is added into front channel layer ink, the mixed ink is sprayed on a substrate to carry out ink-jet printing of the front channel layer, so that the surface wettability of the manufactured front channel layer is improved, when a rear channel layer is manufactured on the front channel layer by using an ink-jet printing process, the contact angle of rear channel layer ink sprayed on the front channel is reduced, the rear channel layer ink can be accurately spread in a designated range of the front channel layer surface, the rear channel layer ink is densely and uniformly distributed on the front channel layer surface to form a rear channel layer which is highly overlapped with the front channel layer, the carrier mobility of the heterojunction active layer is effectively improved, the performance and the stability of the thin film transistor comprising the heterojunction active layer are further improved, and the thin film transistor is favorable for industrialized mass production.

Description

Thin film transistor and manufacturing method of heterojunction active layer thereof
Technical Field
The invention relates to the technical field of thin film transistors, in particular to a thin film transistor and a manufacturing method of a heterojunction active layer of the thin film transistor.
Background
Thin film transistors are the core control and drive elements for Liquid Crystal Displays (LCDs) and Active Matrix Organic Light Emitting Diode (AMOLED) displays. The quality of the active layer of the thin film transistor directly determines the quality of the performance of the thin film transistor, and further determines the display quality of the image. Currently, the main methods for fabricating the active layer are vacuum sputtering, solution and printing. The printing method has the advantages of relatively simple required equipment and manufacturing process, low processing cost, direct patterning manufacturing without adopting the traditional photoetching and etching process, suitability for manufacturing active layers in large areas, and the printing method which is currently applied to manufacturing the active layers is an inkjet printing process.
In the prior art, a thin film transistor using a heterojunction as an active layer has higher carrier mobility, but the heterojunction active layer is manufactured by adopting the printing method such as the inkjet printing process in a few cases, and the main reason is that a higher contact ratio is difficult to reach between a front channel layer and a rear channel layer of the heterojunction active layer.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a thin film transistor and a method for fabricating a heterojunction active layer thereof, which solve the above-mentioned problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides a manufacturing method of a heterojunction active layer, which comprises the steps of utilizing an inkjet printing process to spray front channel layer ink mixed with wetting agent on a substrate to manufacture and form a front channel layer; and spraying back channel layer ink on the front channel layer by using an ink-jet printing process to manufacture and form a back channel layer.
Preferably, the wetting agent accounts for 0.5-1% of the mass of the front channel layer ink.
Preferably, the wetting agent includes any one of ethylene glycol, glycerol, sorbitol, hydroxypropyl methylcellulose, and polyvinyl alcohol.
Preferably, a contact angle of a surface of the front channel layer in contact with the rear channel layer is less than 10 °.
Preferably, the manufacturing method further comprises: the surface of the back channel layer is irradiated with ultraviolet light.
Preferably, the manufacturing method further comprises: and carrying out thermal annealing treatment on the front channel layer and the rear channel layer.
Preferably, the front channel layer ink comprises indium nitrate or indium zinc nitrate.
Preferably, the back channel layer ink includes a metal salt.
Preferably, the metal salt includes at least one of indium nitrate, gallium nitrate, zinc nitrate, and tin chloride.
The invention also provides a thin film transistor which comprises the heterojunction active layer formed by the manufacturing method.
According to the thin film transistor and the manufacturing method of the heterojunction active layer thereof, the wetting agent is added into the front channel layer ink to conduct ink-jet printing, so that the surface wettability of the front channel layer is improved, when the rear channel layer is manufactured on the front channel layer by the ink-jet printing process, the rear channel layer ink can be accurately paved in a designated range of the front channel layer surface, the rear channel layer ink is densely and uniformly distributed on the front channel layer surface, a continuous rear channel layer which is overlapped with the front channel layer in height is formed, and the carrier mobility of the heterojunction active layer is further effectively improved. The manufacturing method is simple in process, can be directly applied to LCD and OLED display drive backboard through simple logic circuit connection, is suitable for large-scale industrialized manufacturing requirements, and is particularly suitable for metal oxide thin film transistors with a plurality of advantages.
Drawings
Fig. 1 is a flowchart of a method for fabricating a heterojunction active layer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a thin film transistor according to an embodiment of the present invention;
FIG. 3 is a graph showing the source-drain current of each of 30 TFTs fabricated according to an embodiment of the invention as a function of gate voltage;
fig. 4 is a statistical distribution diagram of carrier mobilities of the 30 thin film transistors;
fig. 5 is a graph showing the change of the source leakage current with the gate voltage corresponding to different time periods of the thin film transistor fabricated according to the embodiment of the present invention under the forward bias.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are merely exemplary and the invention is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present invention due to unnecessary details, only structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, while other details having little relevance are omitted.
As shown in fig. 1 and 2, the present embodiment provides a method for manufacturing a heterojunction active layer 2, which includes:
s1, spraying front channel layer ink mixed with wetting agent on a substrate 1 by using an ink-jet printing process to manufacture and form a front channel layer 21;
and S2, spraying back channel layer ink on the front channel layer 21 by using an ink-jet printing process to manufacture and form a back channel layer 22.
According to the manufacturing method of the heterojunction active layer 2, the wetting agent is added into the front channel layer ink, the mixed ink is sprayed on the substrate 1 for ink-jet printing, so that the surface wettability of the manufactured front channel layer 21 is improved, when the rear channel layer 22 is manufactured on the front channel layer 21 by using the ink-jet printing process, the contact angle of the rear channel layer ink sprayed on the front channel layer 21 can be reduced, the rear channel layer ink can be accurately spread in the appointed range of the surface of the front channel layer 21, the rear channel layer ink is densely and uniformly distributed on the surface of the front channel layer 21, the continuous rear channel layer 22 which is overlapped with the front channel layer 21 in height is formed, and the carrier mobility of the heterojunction active layer 2 is further effectively improved. Moreover, the manufacturing method does not have short timeliness after hydrophilic treatment by using UV light-ozone or oxygen plasma, can improve the surface wettability of the front channel layer 21 for a long time, is suitable for the requirement of industrialized mass production, and is particularly suitable for mass production of metal oxide thin film transistors with a plurality of advantages.
In an embodiment of the present invention, after the back channel layer ink is sprayed onto the front channel layer 21, the contact angle of the surface of the front channel layer 21 in contact with the back channel layer 22 is less than 10 °. The contact angle is the included angle between the tangent line of the gas-liquid interface at the intersection point of the gas phase, the liquid phase and the solid-liquid interface, the smaller the contact angle, the more gentle and uniform the spreading of the liquid on the solid surface, the more hydrophilic the solid is, the easier the liquid on the solid surface wets the solid, and the more difficult the liquid moves on the solid surface, therefore, the invention improves the wettability of the front channel layer 21 by adding the wetting agent into the ink, reduces the contact angle of the rear channel layer ink on the front channel layer 21, so that the rear channel layer ink is not easy to deviate from the surface of the front channel layer 21, and can be accurately and uniformly spread on the surface of the front channel layer 21.
The ratio of the wetting agent to the front channel layer ink determines the degree of wetting of the surface of the front channel layer 21, and the wetting agent is, for example, 0.5% to 1% by mass of the front channel layer ink.
The wetting agent may be selected according to the different materials actually used for the front channel layer ink and the rear channel layer ink, and illustratively, the wetting agent includes, but is not limited to, any one of ethylene glycol, glycerol, sorbitol, hydroxypropyl methylcellulose, and polyvinyl alcohol.
Illustratively, the front channel layer ink includes, but is not limited to, indium nitrate or indium zinc nitrate.
Illustratively, the back channel layer ink includes a metal salt, further including, but not limited to, at least one of indium nitrate, gallium nitrate, zinc nitrate, and tin chloride. Since the front channel layer 21 and the back channel layer 22 need to form a heterojunction, the front channel layer 21 and the back channel layer 22 need to be formed of different materials.
Further, the method for manufacturing the heterojunction active layer 2 further comprises the following steps: the surface of the rear channel layer 22 is irradiated with ultraviolet light. The ultraviolet pretreatment is performed on the surface of the back channel layer 22, so that the organic substances in the film of the back channel layer 22 can be effectively decomposed, the electron mobility between the heterojunction active layers 2 can be improved, and the high-performance semiconductor film can be obtained. In the embodiment of the present invention, the time for irradiating the surface of the back channel layer 22 with ultraviolet light is preferably 10 to 60 minutes.
Further, the method for manufacturing the heterojunction active layer 2 further comprises: the front channel layer 21 and the rear channel layer 22 are subjected to a thermal annealing treatment. In the present embodiment, the temperature range of the thermal annealing treatment for the front channel layer 21 and the rear channel layer 22 is preferably 200 to 400 ℃.
Referring to fig. 2, the present invention further provides a thin film transistor, where the thin film transistor includes the heterojunction active layer 2 formed by the above-mentioned fabrication method. The thin film transistor further comprises a substrate 3, a grid electrode 4, a dielectric layer serving as the substrate 1, a source electrode 5 and a drain electrode 6, and the manufacturing method of the thin film transistor comprises the following steps: the method comprises the steps of manufacturing a grid electrode 4 with a specific pattern on a substrate 3, wherein the substrate 3 comprises materials such as glass, quartz, polyimide and the like, preferably, transparent glass is used as the substrate 3, magnetron sputtering is used for manufacturing a metal molybdenum layer on the substrate 3, acetone, ethanol and deionized water are respectively used for ultrasonic cleaning of the metal molybdenum layer, then photoetching masking is carried out on the metal molybdenum layer, and then the patterned grid electrode 4 is etched, wherein the thickness of the metal molybdenum layer is preferably 100-150 nm, and the size of the grid electrode 4 is preferably 10-50 um; then, forming a dielectric layer on the grid electrode 4, wherein the dielectric layer comprises materials such as aluminum oxide, hafnium oxide, silicon dioxide and the like, and preferably, growing a 150nm thick aluminum oxide layer by utilizing an atomic layer deposition technology to form a transparent dielectric layer; the dielectric layer is used as a substrate 1, and the heterojunction active layer 2 is manufactured on the dielectric layer by adopting the manufacturing method of the heterojunction active layer 2; and respectively manufacturing a source electrode 5 and a drain electrode 6 which are lapped on the heterojunction active layer 2 on two sides of the heterojunction active layer 2, preferably, respectively sputtering metal molybdenum on the heterojunction active layer 2 by utilizing a traditional microelectronic process such as magnetron sputtering and the like, and then processing by utilizing a Lift-off process to respectively form the source electrode 5 and the drain electrode 6 so as to obtain the thin film transistor.
In the thin film transistor manufactured by the method, the carrier mobility can reach 20cm 2 V -1 s -1 The switching current ratio can reach 10 8 In this way, the thin film transistor is prevented from being turned off due to the excessively high threshold voltage. In addition, the thin film transistor provided by the invention is exemplarily provided as a bottom gate structure, and can be practically provided as other structures such as a top gate structure.
Example 1
In the embodiment, transparent glass is used as a substrate, a metal molybdenum layer with the thickness of 100nm is subjected to magnetron sputtering on the substrate 3, and the metal molybdenum layer is subjected to photoetching mask and then etched to form a patterned grid electrode 4; growing a 150nm thick layer of alumina on the gate electrode 4 using atomic layer deposition techniques; taking water as a solvent, preparing indium nitrate ink with the concentration of 0.02mol/L as front channel layer ink, mixing glycerol wetting agent accounting for 0.5 weight percent of the front channel layer ink, and performing ink-jet printing on the alumina layer by utilizing the mixed ink to form a front channel layer 21; taking water as a solvent, preparing Indium Gallium Zinc Oxide (IGZO) ink with the concentration of 0.02mol/L as rear channel layer ink, performing ink-jet printing on the front channel layer 21 by utilizing the rear channel layer ink, forming a rear channel layer 22 on the front channel layer 21, irradiating the surface of the rear channel layer by ultraviolet light for 20min, and placing the structure into a muffle furnace at 350 ℃ for thermal annealing treatment to obtain an IO/IGZO heterojunction active layer with the rear channel layer 22 and the front channel layer 21 overlapped highly; and finally, respectively manufacturing a source electrode 5 and a drain electrode 6 on the IO/IGZO heterojunction active layer to manufacture the thin film transistor.
Example 2
In the embodiment, quartz is adopted as a substrate, a 150nm thick metal molybdenum layer is subjected to magnetron sputtering on the substrate 3, and the metal molybdenum layer is subjected to photoetching mask and then etched to form a patterned grid electrode 4; growing a 100nm hafnium oxide layer on the gate electrode 4 using atomic layer deposition techniques; taking water as a solvent, preparing indium zinc nitrate ink with the concentration of 0.03mol/L as front channel layer ink, mixing sorbitol wetting agent accounting for 1.0 weight percent of the front channel layer ink, and performing ink-jet printing on the hafnium oxide layer by utilizing the mixed ink to form a front channel layer 21; taking water as a solvent, preparing Indium Gallium Oxide (IGO) ink with the concentration of 0.03mol/L as rear channel layer ink, performing ink-jet printing on the front channel layer 21 by utilizing the rear channel layer ink, forming a rear channel layer 22 on the front channel layer 21, irradiating the surface of the rear channel layer 22 by ultraviolet light for 30min, and placing the structure into a muffle furnace at 300 ℃ for thermal annealing treatment to obtain an IO/IGO heterojunction active layer with the rear channel layer 22 and the front channel layer 21 highly overlapped; and finally, respectively manufacturing a source electrode 5 and a drain electrode 6 on the IO/IGO heterojunction active layer to manufacture the thin film transistor.
Example 3
In the embodiment, flexible polyimide is adopted as a substrate 3, a metal molybdenum layer with the thickness of 100nm is subjected to magnetron sputtering on the substrate, and the metal molybdenum layer is subjected to photoetching mask and then etched to form a patterned grid electrode 4; growing a 100nm thick silicon oxide layer on the gate electrode 4 using a PECVD technique; taking water as a solvent, preparing indium nitrate ink with the concentration of 0.05mol/L as front channel layer ink, mixing hydroxypropyl methyl cellulose wetting agent accounting for 0.5 weight percent of the front channel layer ink into the front channel layer ink, and performing ink-jet printing on the aluminum oxide layer by utilizing the mixed ink to form a front channel layer 21; taking water as a solvent, preparing Zinc Tin Oxide (ZTO) ink with the concentration of 0.05mol/L as rear channel layer ink, performing ink-jet printing on the front channel layer 21 by utilizing the rear channel layer ink, forming a rear channel layer 22 on the front channel layer, irradiating the surface of the rear channel layer by ultraviolet light for 60min, and placing the structure into a muffle furnace with the temperature of 250 ℃ for thermal annealing treatment to obtain an IO/ZTO heterojunction active layer with the rear channel layer 22 and the front channel layer 21 overlapped in height; and finally, respectively manufacturing a source electrode 5 and a drain electrode 6 on the IO/ZTO heterojunction active layer to manufacture the thin film transistor.
Referring to FIG. 3, the present invention exemplarily adopts the method for fabricating heterojunction active layers as described above to fabricate 30 TFTs, wherein the abscissa represents the gate voltage V gs The ordinate represents the source-drain current I ds Source drain voltage V ds The thin film transistor manufactured by the manufacturing method works in a linear region at 1V.
As can be seen from FIG. 4, the 30 TFTs are concentrated and distributed at a carrier mobility of 18cm 2 V -1 s -1 About, carrier mobility is relatively high.
Referring to FIG. 5, the abscissa in the graph represents the gate voltage V gs The ordinate represents the source-drain current I ds Source drain voltage V ds At 1V, the forward bias voltage applied to the TFT is 20V, which shows that the TFT has a corresponding source-drain current I after a long period of time ds With gate voltage V gs The thin film transistor obtained by the manufacturing method has relatively strong stability.
In summary, according to the method for manufacturing the thin film transistor and the heterojunction active layer thereof provided by the embodiments of the present invention, the wetting agent is added into the front channel layer ink to perform inkjet printing, so that the surface wettability of the manufactured front channel layer 21 is improved, when the back channel layer 22 is manufactured on the front channel layer 21 by using the inkjet printing process, the back channel layer ink can be accurately spread in the designated range of the front channel layer 21 surface, the back channel layer ink is densely and uniformly distributed on the front channel layer 21 surface, and the back channel layer 22 which is highly overlapped with the front channel layer 21 is formed, so that the carrier mobility of the heterojunction active layer 2 is effectively improved. The manufacturing method is simple in process, the thin film transistor can be directly applied to LCD and OLED display drive backboard through simple logic circuit connection, and the manufacturing method is suitable for large-scale industrialized manufacturing requirements, and particularly suitable for metal oxide thin film transistors with a plurality of advantages.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely exemplary of the application and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the application and are intended to be comprehended within the scope of the application.

Claims (5)

1. A method for fabricating a heterojunction active layer of a thin film transistor, the method comprising:
spraying front channel layer ink with a wetting agent by using an ink-jet printing process to manufacture and form a front channel layer with the wetting agent, wherein the front channel layer ink comprises indium nitrate or indium zinc nitrate, and the wetting agent accounts for 0.5-1% of the front channel layer ink in percentage by mass;
spraying back channel layer ink on the front channel layer by using an ink-jet printing process to manufacture and form a back channel layer, wherein the back channel layer ink comprises at least one of gallium nitrate, zinc nitrate and tin chloride;
the front channel layer ink and the rear channel layer ink are both water in solvent, the front channel layer and the rear channel layer form a heterojunction, and the contact angle of the surface of the front channel layer, which is in contact with the rear channel layer, is smaller than 10 degrees.
2. The method according to claim 1, wherein the wetting agent comprises any one of ethylene glycol, glycerol, sorbitol, hydroxypropyl methylcellulose, and polyvinyl alcohol.
3. The method of manufacturing according to claim 1, further comprising: the surface of the back channel layer is irradiated with ultraviolet light.
4. The method of manufacturing according to claim 1, further comprising: and carrying out thermal annealing treatment on the front channel layer and the rear channel layer.
5. A thin film transistor comprising a heterojunction active layer formed by the method of any one of claims 1 to 4.
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