CN106531612A - Method for preparing transparent oxide semiconductor film and transistor thereof - Google Patents
Method for preparing transparent oxide semiconductor film and transistor thereof Download PDFInfo
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- CN106531612A CN106531612A CN201510571543.3A CN201510571543A CN106531612A CN 106531612 A CN106531612 A CN 106531612A CN 201510571543 A CN201510571543 A CN 201510571543A CN 106531612 A CN106531612 A CN 106531612A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- 230000004913 activation Effects 0.000 claims abstract description 40
- 239000002243 precursor Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 63
- 229910001960 metal nitrate Inorganic materials 0.000 claims description 31
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 18
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 5
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Inorganic materials [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 5
- 229940084478 ganite Drugs 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 208000011580 syndromic disease Diseases 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 10
- 239000002253 acid Substances 0.000 claims 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 2
- 239000012266 salt solution Substances 0.000 claims 2
- 229910002651 NO3 Inorganic materials 0.000 abstract description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 238000001994 activation Methods 0.000 description 31
- 238000009533 lab test Methods 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The invention relates to the technical field of transistor preparation, especially to a method for preparing a transparent oxide semiconductor film. The method includes a first step of transferring a metallic nitrate solution to a substrate, forming a precursor film on the substrate after curing, a second step of placing the substrate with the precursor film formed thereon on a heating bench for heat treatment, wherein the temperature of the heating bench is not lower than 200 DEG C, and not higher than the maximum value of activation temperature, and a third step of placing the precursor film processed in the second step in a muffle furnace for annealing activation. The temperature rising rate is controlled to be no higher than 15 DEG C/min, the temperature is gradually raised to the maximum value of activation temperature, the maximum value of activation temperature is retained for one to two hours. A semiconductor film can be obtained after cooling. A device making process can be introduced to obtain transistors of high performance.
Description
Technical field
This area is related to transistor preparing technical field, especially a kind of preparation method of semiconductor thin-film transistor.
Background technology
Transparent oxide semiconductor thin film transistor technology is that last decade grows up, it is considered to be after non-crystalline silicon, many
Thin-film transistor technologies of new generation after polycrystal silicon film transistor, can be applicable to many electronic applications, especially show backboard
Pixel driver.In prior art, transparent oxide semiconductor thin film is prepared using vacuum deposition method.Using solwution method
Prepare transparent oxide film to avoid using vacuum equipment, realize that large area is manufactured, can also further adopt print process
The thin film of patterning is formed, lithography step is reduced, the advantage with low cost.
For realizing high performance thin film transistor (TFT), transparent oxide semiconductor thin film prepared by solwution method, print process is often
The higher temperature of needs (>400 DEG C), such high temperature is hindered, also above
The manufacture of current industry circle shows the conventional maximum temperature (350 DEG C) of backboard.Therefore, using solwution method, obtaining compared with low temperature
High performance transparent oxide film and its transistor, have great importance.
The content of the invention
For solving the above problems, the present invention is using metal-nitrate solutions as precursor solution, Jing solwution method deposition precursors
After body thin film, precursor thin-film is converted into into sull through specific Technology for Heating Processing.Using known transparent Indium
Thing thin-film transistor structure and technique, among the preparation implantation integrated artistic of the thin film, the transistor that formation can work.
The preparation method of the transparent oxide semiconductor thin film that the present invention is provided, comprises the steps：
Step one：Metal-nitrate solutions are transferred in a substrate, and presoma are formed after solidifying on the substrate
Thin film；
Step 2：The substrate for being formed with the precursor thin-film is placed in the warmed up thermal station to preset temperature carries out heat
Process；Wherein, the thermal station temperature is not less than 200 DEG C, the activation temperature maximum of not higher than described precursor thin-film；
Step 3：The precursor thin-film after step 2 process is placed in into anneal activation in Muffle furnace；Its
In, control heating rate is not higher than 15 DEG C/min, is gradually heating to the activation temperature maximum, keeps the activation temperature most
Big value 1～2 hour, obtains the semiconductive thin film after cooling.
Further, the heat treatment temperature is 200～350 DEG C；The activation temperature maximum is 300～600 DEG C.
Further, the metal-nitrate solutions are made into by one or more in zinc nitrate, indium nitrate, Ganite (Fujisawa).
Substance withdrawl syndrome be 0.05～0.2mol/L solution.Further, when the solvent of the metal-nitrate solutions is second
During glycol methyl ether, ethanolamine, the ethanolamine and the metal-nitrate solutions in the metal-nitrate solutions, are also added with
The ratio of the amount of the total material of middle metallic element is 1:1.
The present invention also provides a kind of preparation method of transistor, comprises the steps：
Step one：Metal-nitrate solutions are transferred in a substrate, and presoma are formed after solidifying on the substrate
Thin film；
Step 2：The substrate for being formed with the precursor thin-film is placed in the thermal station for rise to preset temperature carries out hot place
Reason；Wherein, the thermal station temperature is not less than 200 DEG C, the activation temperature maximum of not higher than described precursor thin-film；
Step 3：Precursor thin-film after step 2 process is placed in into anneal activation in Muffle furnace；Wherein, control
Heating rate processed is not higher than 15 DEG C/min, is gradually heating to the activation temperature maximum, keeps the activation temperature maximum 1
～2 hours, after cooling, obtain the semiconductive thin film；
Step 4：Source electrode, drain electrode is deposited with the semiconductive thin film, forms transistor.
Further, the heat treatment temperature is 200～350 DEG C；The activation temperature maximum is 300～600 DEG C.
Further, the metal-nitrate solutions are made into by one or more in zinc nitrate, indium nitrate, Ganite (Fujisawa).
Substance withdrawl syndrome be 0.05～0.2mol/L solution.Further, when the solvent of the metal-nitrate solutions is second
During glycol methyl ether, ethanolamine, the ethanolamine and the metal-nitrate solutions in the metal-nitrate solutions, are also added with
The ratio of the amount of the total material of middle metallic element is 1:1.
Beneficial effect：The present invention uses common metal-nitrate solutions and conventional annealing activation method, excellent by introducing
The Technology for Heating Processing of change, improves the performance of transparent oxide semiconductor thin film and its transistor.The advantage of the method is at least：
(1) high-performance transistor that solwution method prepares InGaZnO components is realized in 350 DEG C of heat treatment below temperature；(2) raw material is honest and clean
Valency, be easy to get, stablize, low toxicity, low corrosion；(3) heat treatment adopts conventional heating equipment, without vacuum or special protection atmosphere.
Description of the drawings
Fig. 1 obtains transistor arrangement schematic diagram by the embodiment of the present invention 1；
Fig. 2 (a) (b) (c) is respectively the transistor obtained by three groups of parallel laboratory tests of the embodiment of the present invention 1 (a) (b) (c)
Transfer curve figure；
The saturation mobility curve of the transistor that Fig. 3 is obtained by three groups of parallel laboratory tests of the embodiment of the present invention 2 (a) (b) (c)
Figure；
Fig. 4 (a) (b) (c) (d) is respectively three groups of parallel laboratory tests of the embodiment of the present invention 3 (a) (b) (c) and control experiment institute
The transfer curve figure of the transistor of acquisition；
Fig. 5 carries out what three groups of parallel laboratory tests were obtained respectively by the sample of 5 in the embodiment of the present invention 4 different activation temperatures
The saturation mobility curve figure of transistor.
Specific embodiment
The embodiment of the present invention is elaborated below in conjunction with accompanying drawing.
The present invention provides a kind of preparation method of transparent oxide semiconductor thin film, comprises the steps：
Step one：Metal-nitrate solutions are transferred in a substrate, and presoma are formed after solidifying on the substrate
Thin film.
Specifically, it is necessary first to which the amount concentration for preparing total material is 0.05～0.2mol/L metal-nitrate solutions.Wherein,
The metal-nitrate solutions can be by zinc nitrate (Zn (NO3)2), indium nitrate (In (NO3)3), Ganite (Fujisawa). (Ga (NO3)3) in
It is made into for one or more, solvent can select organic solvent or water.If select organic solvent (such as ethylene glycol monomethyl ether), it is
Improve the stability of solution, in addition it is also necessary to add stabilizer (such as ethanolamine).
For different types of transistor, the component of metal-nitrate solutions can be made adjustment, for example, some embodiments
In, metal-nitrate solutions can also only include a kind of metal nitrate (such as indium nitrate)；In other embodiments, metal unit
Plain In:Ga:The proportion of Zn is preferably 3～6:1:2.Then, pre-treatment is carried out to the substrate.
Growth in advance is selected there are 300nm thickness SiO2The heavy doping Si pieces of insulating barrier are cleaned by ultrasonic.If necessary, can be with
Hydrophilic treated is done to substrate using ultraviolet light.
Finally, the metal-nitrate solutions for having configured are transferred to into the substrate using modes such as spin coatings or ink jet printing
SiO2On insulating barrier, the SiO is made2Layer of metal nitrate solution is deposited on insulating barrier.Preferably, base reservoir temperature is controlled for 20
～60 DEG C, treat metal-nitrate solutions to be exposed under external environment and voluntarily solidify, the time is usually no more than 5 hours, and formation does not have
The metal nitrate precursor thin-film of mobility.Before depositing the metal-nitrate solutions, presence or absence of use in substrate
It is possible in the functional layer for building transistor.
Step 2：The substrate for being formed with the precursor thin-film is placed in and is heated in the thermal station of preset temperature, carrying out heat
Process；Wherein, the thermal station temperature is not less than 200 DEG C, not higher than described precursor thin-film activation temperature maximum.
Specifically, Equipment for Heating Processing of the invention is conventional heater, without the need for vacuum or special gas protection atmosphere.
For example, be made up of electro-heat equipment and thermal station, the thermal station be heated to into 200 DEG C or more in advance, will be formed with it is described before
The substrate of drive body thin film is placed in thermal station and carries out heat treatment.The characteristics of this heat treatment is to heat precursor thin-film as quick as thought
To preset temperature, be conducive to the raising of film performance in subsequent activation process.Heat treatment time is flexibly controlled, and performance optimization
The not no inevitable relation of high low degree and heat treatment time length, the temperature for typically making the precursor thin-film overall reach setting
Thermal station temperature is simultaneously kept for more than 1 minute.Heat treatment temperature is generally required higher than 200 DEG C, and is close to the precursor thin-film
Activation temperature maximum is preferred.
Step 3：Precursor thin-film after step 2 process is placed in into anneal activation in Muffle furnace.Specifically,
Precursor thin-film after step 2 process is cooled to room temperature, then places in the Muffle furnace under room temperature state
Activated.In activation process, control heating rate is not higher than 15 DEG C/min, is gradually heating to activation temperature maximum, keeps
The activation temperature maximum 1～2 hour, obtains the semiconductive thin film after naturally cooling to room temperature.The activation temperature is maximum
Value is that those skilled in the art can be obtained, and be made according to the property use of the material of semiconductive thin film, performance and transistor
Go out adjustment.Activation temperature maximum has influence on the heat treatment temperature of step 2.
Activation temperature required for different precursor thin-films be it is different, and anneal activation process be low temperature to high temperature gradually
The process of intensification, keeps a period of time just complete activation when being warming up to activation temperature peak always.The choosing of heat treatment temperature
Select scope and generally require the scope for considering activation temperature.Between being lifted for energy saving and properties of product, balance considers, preferably
Heat treatment temperature is controlled for, in the range of 200～350 DEG C, both can ensure that properties of product were up to standard, treatment temperature can be reduced again.
Step 4：Source electrode, drain electrode is deposited on the semiconductive thin film, forms transistor.
Specifically, using mask plate and vacuum deposition method or photoetching process and magnetically controlled sputter method, with the quasiconductor
Thin film forms source electrode, the drain electrode of aluminum or molybdenum materials matter, the transistor of acquisition on the semiconductive thin film as semiconductor channel layer
Structure is as shown in figure 1, include heavy doping Si substrates 1, SiO from bottom to up2Insulating barrier 2, semiconductive thin film 3, source electrode and drain electrode
4.Wherein, source electrode, drain electrode thickness are preferably 150～300nm, and electrode breadth length ratio is 15～20, and channel length is 50～70 μm.
For the superiority for showing the present invention more directly perceived, the present invention also introduces control experiment.Control experiment is using the present invention
The step of application one, step 3 and step 4 do not have step 2 in obtaining semiconductive thin film and its transistor, i.e. control experiment
Operation.
Below by table 1 introduce embodiment 1～4, and a control experiment explanation present invention superiority.In order to explore heat
The step of preferred scope for the treatment of temperature, each embodiment two, is also provided with three temperature steps, carries out parallel laboratory test.
The performance parameter of 1 control experiment of table, the parameter of embodiment 1～4 and its acquisition transistor
As shown in Table 1,95 DEG C of (a), 185 DEG C of (b), (c) 275 DEG C three are provided with for heat treatment temperature in embodiment 1
Ladder carries out three groups of parallel laboratory tests.Although three kinds of samples of embodiment 1 are have passed through at the activation of same 300 DEG C in Muffle furnace
Reason, but due in step 2 heat treatment temperature it is different, cause obtained properties of product also different, illustrate in Fig. 2 (a),
Three group transistor product of (b), (c) its saturation mobility respectively (a) 0.11cm2V-1s-1、(b)0.32cm2V-1s-1(c)
0.92cm2V-1s-1, in figure, electric current is by the numerical value after breadth length ratio normalization.Therefore, heat treatment temperature highest (275 DEG C)
One group of transistor mobility for being obtained is more than remaining two groups three times, with obvious better performance.
Similarly, as shown in Table 1,100 DEG C of (a), 200 DEG C of (b), (c) are provided with for heat treatment temperature in embodiment 2
300 DEG C of three ladders carry out three groups of parallel laboratory tests.Although three kinds of samples of embodiment 2 have passed through same step in Muffle furnace
Rapid three activated process, but due to heat treatment temperature difference in step 2, cause obtained properties of product also different.Figure
(a), (b), (c) three group transistor product its saturation mobility respectively (a) 1.9cm is illustrated in 32V-1s-1、(b)6.1cm2V- 1s-1(c) 9.1cm2V-1s-1, therefore, one group of transistor mobility for being obtained of heat treatment temperature highest (300 DEG C) is
Remaining two groups are significantly larger than, with obvious better performance.Similarly, as shown in Table 1, heat treatment temperature is directed in embodiment 3
Being provided with 95 DEG C of (a), 185 DEG C of (b), (c) 275 DEG C of three ladders carries out three groups of parallel laboratory tests, and introduces control experiment.Implement
Three kinds of samples of example 3 have passed through same step three activated process in Muffle furnace, but due to heat in step 2 at
Reason temperature is different, causes obtained properties of product also different.Illustrate in Fig. 4 (a), (b), (c) three group transistor product its
Saturation mobility is respectively (a) 0.97cm2V-1s-1、(b)1.42cm2V-1s-1(c) 3.51cm2V-1s-1, in figure, electric current is by width
Length is than the numerical value after normalization.Therefore, one group of transistor mobility for being obtained of heat treatment temperature highest (275 DEG C) is
Remaining two groups are significantly larger than, with obvious better performance.Also, by control experiment, not through the heat of step 2
Process, the transistor saturation mobility for being obtained is 0.19cm2V-1s-1, three group parallel realities of its property well below embodiment 3
Test the product of gained.
In 2 embodiment 4 of table under different condition device mobility (cm2/Vs)
Similarly, understand with reference to table 1, table 2, in embodiment 4,5 different activation temperatures are provided with most for 5 samples
Big value (respectively 300 DEG C, 350 DEG C, 400 DEG C, 500 DEG C, 600 DEG C), 5 samples heat treatment stages be provided with 100 DEG C,
200 DEG C, 300 DEG C of three ladders carry out three groups of parallel laboratory tests.Although 4 whole samples of embodiment are have passed through in Muffle furnace equally
The step of three activated process, but due in step 2 heat treatment temperature it is different, do not cause obtained properties of product also not
Together.Its saturation mobility curve figure of transistor product under various activation temperatures is illustrated in Fig. 5.As seen from Figure 5, even if each group sample
Product activation temperature maximum is different, but as heat treatment temperature is raised, the performance of sample is presented the trend of lifting, heat treatment temperature
One group of transistor mobility for being obtained of degree highest (300 DEG C) is significantly larger than remaining two groups, with obvious better performance.
In sum, the present invention makes precursor thin-film in pre-heated heat by the Technology for Heating Processing of increase step 2
First it is heated on platform a period of time, enters back into activation stage, the performance of final products can be greatly improved.By the effect of each embodiment
Fruit can know that comprehensive product performance and energy cost consider, the preset temperature of heat treatment stages is controlled at 200～350 DEG C
In the range of best results.
Claims (8)
1. a kind of preparation method of transparent oxide semiconductor thin film, comprises the steps：
Step one：Metal-nitrate solutions are transferred in a substrate, and precursor thin-film are formed after solidifying on the substrate；
Step 2：The substrate for being formed with the precursor thin-film is placed in the thermal station for rise to preset temperature carries out heat treatment；
Wherein, the preset temperature is not less than 200 DEG C, the activation temperature maximum of not higher than described precursor thin-film；
Step 3：Precursor thin-film after step 2 process is placed in into anneal activation in Muffle furnace；Wherein, control rises
Warm speed is not higher than 15 DEG C/min, is gradually heating to the activation temperature maximum, keeps the activation temperature maximum 1～2
Hour, the semiconductive thin film is obtained after cooling.
2. the preparation method of semiconductive thin film according to claim 1, it is characterised in that the preset temperature is 200～350
℃。
3. the preparation method of semiconductive thin film according to claim 1, it is characterised in that the metal-nitrate solutions be by
The substance withdrawl syndrome that one or more in zinc nitrate, indium nitrate, Ganite (Fujisawa). is made into is the solution of 0.05～0.2mol/L.
4. the preparation method of semiconductive thin film according to claim 3, it is characterised in that when the metal-nitrate solutions
When solvent is ethylene glycol monomethyl ether, ethanolamine, the ethanolamine and the metal nitre in the metal-nitrate solutions, is also added with
In acid salt solution, the ratio of the amount of the total material of metallic element is 1:1.
5. a kind of preparation method of transistor, it is characterised in that comprise the steps：
Step one：Metal-nitrate solutions are transferred in a substrate, and precursor thin-film are formed after solidifying on the substrate；
Step 2：The substrate for being formed with the precursor thin-film is placed in the thermal station for rise to preset temperature carries out heat treatment；
Wherein, the thermal station temperature is not less than 200 DEG C, not higher than described precursor thin-film activation temperature maximum；
Step 3：Precursor thin-film after step 2 process is placed in into anneal activation in Muffle furnace；Wherein, control rises
Warm speed is not higher than 15 DEG C/min, is gradually heating to the activation temperature maximum, keeps the activation temperature maximum 1～2
Hour, the semiconductive thin film is obtained after cooling；
Step 4：Source electrode, drain electrode is deposited with the semiconductive thin film, forms transistor.
6. the preparation method of semiconductive thin film according to claim 5, it is characterised in that the heat treatment temperature is 200～
350℃。
7. the preparation method of semiconductive thin film according to claim 5, it is characterised in that the metal-nitrate solutions be by
The substance withdrawl syndrome that one or more in zinc nitrate, indium nitrate, Ganite (Fujisawa). is made into is the solution of 0.05～0.2mol/L.
8. the preparation method of semiconductive thin film according to claim 7, it is characterised in that when the metal-nitrate solutions
When solvent is ethylene glycol monomethyl ether, ethanolamine, the ethanolamine and the metal nitre in the metal-nitrate solutions, is also added with
In acid salt solution, the ratio of the amount of the total material of metallic element is 1:1.
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