CN104404462A - Method for low temperature rapid preparation of polycrystalline silicon film by co-sputtering - Google Patents
Method for low temperature rapid preparation of polycrystalline silicon film by co-sputtering Download PDFInfo
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- CN104404462A CN104404462A CN201410649289.XA CN201410649289A CN104404462A CN 104404462 A CN104404462 A CN 104404462A CN 201410649289 A CN201410649289 A CN 201410649289A CN 104404462 A CN104404462 A CN 104404462A
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Abstract
The invention relates to a method for low temperature rapid preparation of a polycrystalline silicon film by co-sputtering. The method includes: adopting a magnetron sputtering coating system, taking a glass sheet as the substrate, preparing an Al/a-Si composite film on the substrate by a co-sputtering technique, embedding Al in an a-Si film evenly, and adjusting the Al/Si co-sputtering ratio to control the Al/Si content of the film, preparing the Al/a-Si composite film at an Si sputtering power of 100-350W and an Al sputtering power of 20-30W, then putting the Al/a-Si composite film into an RTP rapid photothermal annealing furnace to perform annealing for 10-15min at 150DEG C-300DEG C in an N2 atmosphere, thus obtaining the polycrystalline silicon film with a crystallization rate of 45%-90% and a grain size of 20-100nm. The crystallization efficiency is improved, and low temperature rapid preparation of the polycrystalline silicon film with high crystallization rate and good uniformity can be realized.
Description
Technical field
The present invention relates to a kind of method that cosputtering low temperature prepares polysilicon membrane fast, belong to efficient silicon-based thin film solar cell field.
Background technology
Carrier mobility is high, uptake factor is large because having for polysilicon (Polycrystalline silicon) film, photoconductive property is good and stability advantages of higher, various opto-electronic device can be widely used in, as thin film transistor, solar cell, image sensor etc.Polysilicon membrane is obtained by amorphous silicon membrane crystallization mostly, at present, the method for non-crystalline silicon (Amorphous silicon) film crystallization mainly contains: rapid thermal anneal methods, Excimer-Laser Crystallization, solid phase crystallization method, metal inducement method and microwave annealing method etc.Wherein, the metal inducement Annealing Crystallization method features such as temperature is low, the time is short because having, mate with device technology and the favor of extremely people.People, by being studied nickel (Ni), aluminium (Al), gold (Au), copper (Cu), palladium (Pd), platinum (Pt), silver metal inducement non-crystalline silicon (α-Si) the film crystallization such as (Ag) and chromium (Cr), confirm that the motivating force of metal inducement amorphous silicon membrane crystallization is the reduction of non-crystalline silicon free energy when being converted into crystalline silicon.In addition, stress, defect and dislocation in amorphous silicon membrane is also had also for amorphous silicon membrane crystallization provides motivating force.Its mechanism is that metal and non-crystalline silicon form the rich metal silicide of a kind of metastable state at its interface, metal and Siliciumatom carry out mutual diffusion by this silicide, the metal of induction will be mixed and become impurity in polysilicon, in being with of silicon, introduce an energy level, thus the activation energy causing non-crystalline silicon to be converted into polysilicon reduces.Wherein, the impurity level that metallic aluminium (Al) causes is about 0.069eV, closely valence band, and the activation energy that amorphous silicon is changed to crystalline silicon is very low, and therefore, aluminium can prepare the polysilicon membrane of superperformance by low temperature fast as inducing metal.In addition, Al, as group III A element, is doped in silicon film and becomes p type impurity.
In recent years, the research that people prepare polysilicon membrane fast to aluminum-induced low temperature is a lot, as patent (application number: 201310111724.9) Shanghai University utilizes the katalysis of metal A l, first at Grown amorphous silicon membrane, silica membrane and Al film, form the structure at multiple interface, then carry out two annealing, finally surface A l etching is removed, prepare polysilicon membrane; Patent (application number: 201210215016.5), BJ University of Aeronautics & Astronautics adopts metal lattice inducing crystallization of amorphous silicon thin film, specifically first on substrate, prepares metal lattice, then plates metallic film, amorphous silicon membrane prepared by metallic film, prepares polysilicon membrane by annealing; The people such as Xi'an University of Technology Liang Ge disclose by preparation Al/Si/Al/Si on " artificial lens journal " 40 volumes the 1st phase in 2011 ... .Al/Si/glass the film of structure, prepares polysilicon membrane after annealing.The method that Al induced low temperature prepares polysilicon membrane is fast first prepare Al/a-Si, a-Si/Al, Al/SiO mostly
2/ a-Si and Al/AlO
3the composite membrane of/a-Si structure, then carry out preparing by annealing polysilicon membrane.Therefore, silicon film crystallization gradually from Al/Si interface, exists that crystallization efficiency is low, the deficiency such as lack of homogeneity and delaminating film.Given this, this patent proposes a kind of method that cosputtering low temperature prepares polysilicon membrane fast, it is characterized in that adopting magnetron sputtering coating system, utilize cosputtering on substrate, prepare Al/a-Si composite membrane, by even for Al landfill in a-Si film, polysilicon membrane is prepared in annealed process, has the advantages such as crystallization interface is large, efficiency is high, crystal grain is evenly distributed.
Summary of the invention
For the problem that background technology proposes, the present invention proposes a kind of method that cosputtering low temperature prepares polysilicon membrane fast, specifically utilizes magnetron sputtering coating system for preparation system, and local vacuum is 6.0 × 10
-4~ 4.0 × 10
-4pa; Utilize sheet glass for substrate N again after cleaning
2dry up; Sputter gas purity is the Ar gas of 99.999%, and flow is 22sccm; The Al target adopting purity to be the silicon target of 99.999 % and purity to be 99.999% is target, operating air pressure is 6.8 ~ 7.2pa, on substrate, cosputtering prepares Al/a-Si composite membrane, by even for Al landfill in a-Si film, the Al/Si content in laminated film regulates and controls by regulating Al/Si sputtering power ratio; Al/a-Si laminated film is put into RTP-500 fast-Hankel transform stove N
2carry out anneal under atmosphere, thus achieve low temperature and prepare polysilicon membrane fast.
the present invention implements according to the following steps
A) utilize three target magnetic control sputtering coating systems, the base vacuum of sputtering system is evacuated to 6.0 × 10
-4~ 4.0 × 10
-4pa;
B) utilize sheet glass for substrate, and use N again after acetone, dehydrated alcohol, deionized water respectively ultrasonic cleaning 10 ~ 15min
2dry up;
C) sputter gas purity is the Ar gas of 99.999%, and flow is 22sccm;
D) the Al target adopting purity to be the silicon target of 99.999 % and purity to be 99.999% is target, and operating air pressure is 6.8 ~ 7.2pa, and on substrate, cosputtering prepares Al/a-Si composite membrane;
E) by even for Al landfill in a-Si film, by regulating the sputtering power of Al/Si than the Al/Si content controlled in composite membrane;
F) by Al
/al/a-Si laminated film prepared by Si cosputtering puts into RTP-500 fast-Hankel transform stove in N
2carry out anneal under atmosphere, prepare polysilicon membrane.
the advantage that the present invention has compared with known technology and positively effect
1, the present invention relates to a kind of method that cosputtering method low temperature prepares polysilicon membrane fast, increase the area of laminated film crystalizing interface, add the crystallization rate of film, reduce crystallization temperature and shorten crystallization time;
2, the polysilicon membrane uniform crystal particles that cosputtering legal system is standby is distributed in film, improves the homogeneity of film.
accompanying drawing explanation
Fig. 1 is the schema that a kind of cosputtering method low temperature that the present invention proposes prepares the method for polysilicon membrane fast;
Fig. 2 is the structure of composite membrane figure that a kind of cosputtering method low temperature that the present invention proposes prepares the method for polysilicon membrane fast
Fig. 3 is the polysilicon profile figure of method under embodiment 1 that a kind of cosputtering method low temperature that the present invention proposes prepares polysilicon membrane fast;
Fig. 4 is that the method that a kind of cosputtering method low temperature that the present invention proposes prepares polysilicon membrane is fast schemed at the film Raman of embodiment 1.
embodiment
embodiment 1
the present embodiment according to the following steps
Adopt JCP-450 tri-target magnetic control sputtering coating system, take sheet glass as substrate, and use acetone, dehydrated alcohol and deionized water to carry out ultrasonic cleaning 10 ~ 15min respectively to it successively, then use N
2dry up, with polycrystalline silicon target (purity 99.999 %, specific conductivity 0.02 Ω cm) for target and purity be the Al target of 99.999% for target, sputter gas is the Ar gas of purity 99.999%; The base vacuum of sputtering chamber is evacuated to 5.0 × 10
-4pa, open breather valve and pass into Ar gas, Ar airshed is 20sccm, adjustment sputtering pressure is 6.8pa ~ 7.2pa, on substrate, cosputtering prepares Al/a-Si composite membrane, wherein the sputtering power of non-crystalline silicon (a-Si) film is 100W ~ 300W, and the sputtering power of aluminium (Al) film is 20 ~ 30W, and the Al/a-Si composite membrane prepared by cosputtering puts into fast-Hankel transform stove in N
2under atmosphere, carry out short annealing 10 ~ 15min with the temperature of 150 DEG C ~ 300 DEG C.Obtain crystallization rate and reach 45% ~ 90%, grain-size is the polysilicon membrane of 20 ~ 100nm.
Claims (1)
1. a cosputtering low temperature prepares the method for polysilicon membrane fast, its feature comprises: " adopt magnetron sputtering coating system; cosputtering prepares Al/a-Si composite membrane on a glass substrate; by even for Al landfill in a-Si film; controlled the Al/Si content in composite membrane by the power ratio of regulation and control Al/Si cosputtering, Al/a-Si composite membrane is put into quick anneal oven in N
2carry out low temperature short annealing under atmosphere, the method has the advantages such as crystallization temperature is low, the time is short, can prepare the polysilicon membrane of crystallization rate height and good uniformity.
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| CN201410649289.XA CN104404462B (en) | 2014-11-17 | 2014-11-17 | A kind of method that cosputtering low temperature quickly prepares polysilicon membrane |
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| CN201410649289.XA CN104404462B (en) | 2014-11-17 | 2014-11-17 | A kind of method that cosputtering low temperature quickly prepares polysilicon membrane |
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| CN104404462A true CN104404462A (en) | 2015-03-11 |
| CN104404462B CN104404462B (en) | 2017-09-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900496A (en) * | 2015-05-05 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Method for preparing face-centered cubic phase silicon crystal film |
| CN105506734A (en) * | 2015-12-18 | 2016-04-20 | 浙江师范大学 | Polycrystalline silicon film and low-temperature preparation method thereof |
| CN109449256A (en) * | 2018-10-26 | 2019-03-08 | 含山县领创新材料科技有限公司 | A kind of Low-cost production method of silicon for solar cell base film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
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2014
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374706A (en) * | 2012-04-13 | 2013-10-30 | 河南师范大学 | Method for preparing polycrystalline silicon film |
Non-Patent Citations (4)
| Title |
|---|
| 尤天友: ""硅基薄膜太阳能电池材料的制备与性能研究"", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
| 李伟等: "《太阳能电池材料及其应用》", 31 January 2014 * |
| 段良飞等: ""低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究"", 《光谱学与光谱分析》 * |
| 金仲和: "《低温多晶薄膜晶体管研究》", 31 December 2001 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900496A (en) * | 2015-05-05 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Method for preparing face-centered cubic phase silicon crystal film |
| CN105506734A (en) * | 2015-12-18 | 2016-04-20 | 浙江师范大学 | Polycrystalline silicon film and low-temperature preparation method thereof |
| CN109449256A (en) * | 2018-10-26 | 2019-03-08 | 含山县领创新材料科技有限公司 | A kind of Low-cost production method of silicon for solar cell base film |
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| CN104404462B (en) | 2017-09-15 |
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Granted publication date: 20170915 Termination date: 20191117 |