CN103361600B - Solar cell light absorption layer preparation method - Google Patents

Solar cell light absorption layer preparation method Download PDF

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CN103361600B
CN103361600B CN201310302652.6A CN201310302652A CN103361600B CN 103361600 B CN103361600 B CN 103361600B CN 201310302652 A CN201310302652 A CN 201310302652A CN 103361600 B CN103361600 B CN 103361600B
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copper
indium
solar cell
light absorption
film
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CN103361600A (en
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郭延璐
肖旭东
杨春雷
顾光一
冯叶
程冠铭
鲍浪
于冰
徐苗苗
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Shenzhen Institute of Advanced Technology of CAS
Chinese University of Hong Kong CUHK
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Shenzhen Institute of Advanced Technology of CAS
Chinese University of Hong Kong CUHK
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

A kind of solar cell light absorption layer preparation method, comprises the following steps: by magnetron sputtering method, forms copper, indium and selenium film at deposited on substrates; High temperature annealing is carried out to described copper, indium and selenium film, makes described copper, indium and selenium film crystallization, to form copper indium diselenide transition layer over the substrate; By adopting the magnetron sputtering of copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, and high temperature crystallization, obtained solar cell light absorption layer.In above-mentioned solar cell light absorption layer preparation method, by present substrate forms the good copper indium diselenide transition layer of crystalline quality by magnetron sputtering method, the solar cell light absorption layer be made up of copper-indium-galliun-selenium material is formed again on the basis of copper indium diselenide transition layer, contribute to the formation of high quality copper-indium-galliun-selenium crystal grain, thus make the crystalline quality of solar cell light absorption layer good, improve the quality of solar cell light absorption layer.

Description

Solar cell light absorption layer preparation method
Technical field
The present invention relates to photovoltaic technology, particularly relate to a kind of solar cell light absorption layer preparation method.
Background technology
Copper-indium-galliun-selenium CuIn xga 1-xse 2(CIGS) thin-film solar cells has the features such as efficiency of conversion is high, cost is low, good stability, is one of the most promising thin-film solar cells.Wherein, CIGS thin-film is commonly used for the light absorbing zone in thin-film solar cells.Up to the present, the research of EMPA institute of Switzerland shows, the photoelectric transformation efficiency of the copper-indium-galliun-selenium film solar cell prepared based on three-stage co-evaporation process reaches 20.4%, is the highest transformation efficiency record of current copper-indium-galliun-selenium film solar cell.
In recent years, by sputtering copper indium callium diselenide (CIGS) (CuInGaSe 2) the quad alloy target method of preparing CIGS thin-film is developed rapidly, this method overcomes the complicated complicated processes of selenizing after conventional sputter, make whole technique become simply controlled, large surface uniformity, reproducible, be hopeful the cost reducing photovoltaic cell.
Prepare in the process of solar cell light absorption layer traditional, it is generally at high temperature directly copper-indium-galliun-selenium is deposited on substrate, finally preparing in the light absorbing zone of gained, on the interface of substrate and light absorbing zone, gallium content is higher, and the enrichment of gallium can generate copper gallium selenium ternary phase in interface, the film crystal grain of preparation is less than normal, affect crystalline quality, have more crystal boundary when crystal grain is less to exist, cause film defects to increase, have disadvantageous effect to the mobility of current carrier.
Summary of the invention
Based on this, be necessary to provide a kind of crystalline quality good solar cell light absorption layer preparation method.
A kind of solar cell light absorption layer preparation method, comprises the following steps:
By magnetron sputtering method, form copper, indium and selenium film at deposited on substrates;
High temperature annealing is carried out to described copper, indium and selenium film, makes described copper, indium and selenium film crystallization, to form copper indium diselenide transition layer over the substrate; And
By magnetron sputtering method, adopt copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, obtained solar cell light absorption layer.
Wherein in an embodiment, described by magnetron sputtering method, the step forming copper, indium and selenium film at deposited on substrates is specially: by adopting the magnetron sputtering of copper indium two selenium ternary alloy target, formation of deposits copper, indium and selenium film over the substrate.
Wherein in an embodiment, the thickness of described copper indium diselenide transition layer is 50 ~ 100nm.
Wherein in an embodiment, adopt described copper indium callium diselenide (CIGS) quad alloy target, on described copper indium diselenide transition layer, the thickness of the CIGS thin-film of formation of deposits is 1.5 μm.
Wherein in an embodiment, by controlling beginning to described each target material magnetic sputtering or stopping to the closure or openness of baffle plate above each target.
Wherein in an embodiment, described by magnetron sputtering method, also comprised form the step of copper, indium and selenium film at deposited on substrates before:
Close the baffle plate above described each target and specimen holder, by magnetron sputtering method, pre-sputtering is carried out to described each target, continue 5 minutes.
Wherein in an embodiment, described by magnetron sputtering method, formed at deposited on substrates in the step of copper, indium and selenium film, the time length of described magnetron sputtering is 6 ~ 10 minutes.
Wherein in an embodiment, described high temperature annealing is carried out to described copper, indium and selenium film, the step of described copper, indium and selenium film crystallization is specially: heat the described substrate having deposited copper, indium and selenium film, in 3 minutes, be progressively warming up to 500 DEG C, and maintains 3 ~ 5 minutes on 500 DEG C.
Wherein in an embodiment, described by magnetron sputtering method employing copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, the step of obtained solar cell light absorption layer specifically comprises the following steps:
Described silicon to 500 ~ 600 DEG C of described copper indium diselenide transition layer will be formed;
By adopting the magnetron sputtering of described copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer; And
Stop heating, naturally cool to room temperature, obtained solar cell light absorption layer.
Wherein in an embodiment, described by magnetron sputtering method, adopt copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, the step of obtained solar cell light absorption layer specifically comprises the following steps:
Under normal temperature, by magnetron sputtering method, adopt described copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer;
The temperature of described CIGS thin-film is risen to 500 ~ 600 DEG C, to carry out high temperature annealing, makes described CIGS thin-film crystallization; And
Stop heating, naturally cool to room temperature, obtained solar cell light absorption layer.
In above-mentioned solar cell light absorption layer preparation method, by present substrate forms the good copper indium diselenide transition layer of crystalline quality by magnetron sputtering method, the solar cell light absorption layer be made up of copper-indium-galliun-selenium material is formed again on the basis of copper indium diselenide transition layer, solar cell light absorption layer is again through isoepitaxial growth gained on the basis of copper indium diselenide transition layer, contribute to the formation of high quality copper-indium-galliun-selenium crystal grain, thus make the crystalline quality of solar cell light absorption layer good, improve the quality of solar cell light absorption layer.
Accompanying drawing explanation
Fig. 1 is the schema of the solar cell light absorption layer preparation method in present pre-ferred embodiments;
Fig. 2 is the particular flow sheet of step S130 in the preparation method of solar cell light absorption layer shown in Fig. 1;
Fig. 3 is the particular flow sheet of step S130 in the solar cell light absorption layer preparation method of another embodiment;
The Electronic Speculum figure of the light absorbing zone of Fig. 4 obtained by traditional solar cell light absorption layer preparation method;
The Electronic Speculum figure of the light absorbing zone of Fig. 5 obtained by the preparation method of solar cell light absorption layer shown in Fig. 1.
Embodiment
Below in conjunction with drawings and the specific embodiments, solar cell light absorption layer preparation method is further detailed.Refer to Fig. 1, the solar cell light absorption layer preparation method in present pre-ferred embodiments, comprises the following steps:
Step S110, by magnetron sputtering method, forms copper, indium and selenium film at deposited on substrates.Specifically comprise:
Substrate is put into magnetron sputtering chamber.Substrate is calcium soda glass substrate, it is coated with molybdenum film layer.Magnetron sputtering chamber is vacuumized, and opens argon gas by-pass valve control, to pass into the argon gas needed for magnetron sputtering in magnetron sputtering chamber.Be provided with multiple target and specimen holder in magnetron sputtering chamber, specimen holder is for placing substrate.In the present embodiment, especially by employing copper indium two selenium (CuInSe 2) magnetron sputtering of ternary alloy target, to form copper, indium and selenium film at deposited on substrates.The power supply of target exports heating power and is adjusted to 100 ~ 150W, and the time length of magnetron sputtering is 6 ~ 10 minutes, and the thickness of copper, indium and selenium film is about 50 ~ 100 nanometers.
Be appreciated that in other embodiments, cupric target and indium selenide target can also be adopted to carry out magnetron sputtering, to form copper, indium and selenium film at deposited on substrates.Wherein, cupric target is selenkupfer (Cu 2se) at least one in target, copper selenide (CuSe) target or copper (Cu) target.Be respectively 200W and 120W to the thermal output that adds of cupric target and indium selenide target, the time length of magnetron sputtering is 6 ~ 10 minutes.
It should be noted that for being not limited to above-mentioned several by magnetron sputtering with the target forming copper, indium and selenium film at deposited on substrates, also can be combined to form by the target of other kind.
Concrete magnetron sputtering chamber is vacuumized, and the process passing into argon gas to be specially: first with mechanical pump, magnetron sputtering chamber being evacuated to Pirani gauge reading is 50Pa in the present embodiment, then to be evacuated to ionization gauge reading with molecular pump from 50Pa be 2 × 10 -3pa, now system enters operating air pressure.Open argon gas by-pass valve control, the high-purity argon gas of 99.999% is passed into sputtering chamber, rate-controlling is per minute 25 milliliters.The folding degree of final adjustment molecular pump push-pull valve, makes the air pressure in magnetron sputtering chamber maintain 5 × 10 -1pa.
In magnetron sputtering chamber, above each target and specimen holder, be equipped with baffle plate.By controlling beginning to each target material magnetic sputtering or stopping to the closure or openness of baffle plate above each target.And by controlling the closure or openness of baffle plate above specimen holder in the beginning of deposited on substrates plated film or stopping.Baffle plate above target can stop the particle swashing in target and shoot out, and makes it fly to substrate.Baffle plate on substrate can stop the particle flying to substrate from target, and only have above-mentioned baffle plate all to open, sputter coating could realize.When deposition plating, first close the baffle plate on each target and specimen holder, open the rf magnetron sputtering power supply of each target, the output rating of adjustment power supply and reflective power, make target build-up of luminance.Open each baffle plate, to realize the deposition plating on substrate.
Specifically in the present embodiment, by magnetron sputtering method, before deposited on substrates forms copper, indium and selenium film, also can comprise the baffle plate of closing above each target and specimen holder, by magnetron sputtering method, pre-sputtering is carried out to each target, continue the step of 5 minutes.After vacuumizing and pass into argon gas, pre-sputtering is carried out to each target, to remove the impurity particle of target material surface absorption.In the process of pre-sputtering, especially by the baffle plate of closing above each target, the sputtering particle of impurity particle is had to be deposited on substrate to stop to mix.
Be appreciated that the step of above-mentioned pre-sputtering also can be saved when the surface of each target is comparatively clean.
Step S120, carries out high temperature annealing to copper, indium and selenium film, makes copper, indium and selenium film crystallization, to form copper indium diselenide transition layer on substrate.
After deposited on substrates forms copper, indium and selenium film, high temperature annealing is carried out to copper, indium and selenium film, makes copper, indium and selenium film crystallization.In the present embodiment, the process of above-mentioned high temperature annealing is specially: heat the substrate depositing copper, indium and selenium film, in 3 minutes, be progressively warming up to 500 DEG C, and maintains 3 ~ 5 minutes on 500 DEG C.Copper indium diselenide transition layer is formed after copper, indium and selenium film crystallization.In copper indium diselenide transition layer, its crystal mass is better.Specifically in the present embodiment, the thickness of copper indium diselenide transition layer is 50 ~ 100nm.
Step S130, by magnetron sputtering method, adopts copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer, obtained solar cell light absorption layer.Specifically in the present embodiment, adopt copper indium callium diselenide (CIGS) quad alloy target, on copper indium diselenide transition layer, the thickness of the CIGS thin-film of formation of deposits is 1.5 μm.
Above-mentioned solar cell light absorption layer preparation method first obtains the good copper indium diselenide transition layer of quality at Grown through the high temperature anneal, CIGS thin-film on the basis of the good copper indium diselenide transition layer of crystal mass again through isoepitaxial growth gained, contribute to the formation of high quality copper-indium-galliun-selenium crystal grain, thus the good solar cell light absorption layer of crystalline quality can be formed, improve the quality of solar cell light absorption layer.
Specifically in the present embodiment, see also Fig. 2, step S130 specifically comprises the following steps:
Step S132a, will form silicon to 500 ~ 600 DEG C of copper indium diselenide buffer layer.Regulate the heating power supply of substrate, make its temperature rise to 500 ~ 600 DEG C.
Step S134a, by adopting the magnetron sputtering of copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer.
By adopting copper indium callium diselenide (CIGS) (CuInGaSe 2) magnetron sputtering of quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer, the magnetron sputtering time length is about 3 hours.Because underlayer temperature remains on 500 ~ 600 DEG C, CIGS thin-film is crystallization at high temperature.
Step S136a, stops heating, naturally cools to room temperature, obtained solar cell light absorption layer.
Naturally cool to room temperature, after CIGS thin-film crystallization, form solar cell light absorption layer.
It is pointed out that and can save the step of silicon, CIGS thin-film grows at normal temperatures.Concrete, see also Fig. 3, step S130 can specifically comprise the following steps:
Step S132b, under normal temperature, by magnetron sputtering method, adopts copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer.
At normal temperatures, by adopting copper indium callium diselenide (CIGS) (CuInGaSe 2) magnetron sputtering of quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer, the magnetron sputtering time length is about 3 hours.
Step S134b, rises to 500 ~ 600 DEG C by the temperature of CIGS thin-film, to carry out high temperature annealing, makes CIGS thin-film crystallization.After obtaining CIGS thin-film, carry out high temperature annealing to CIGS thin-film, the temperature of high temperature annealing is 500 ~ 600 DEG C, makes CIGS thin-film crystallization.
Step S136b, stops heating, naturally cools to room temperature, obtained solar cell light absorption layer.
Naturally cool to room temperature, after CIGS thin-film crystallization, form solar cell light absorption layer.See also Fig. 4 and Fig. 5, the Electronic Speculum figure of the Electronic Speculum figure of the light absorbing zone of Fig. 4 obtained by traditional solar cell light absorption layer preparation method, Fig. 5 light absorbing zone obtained by the solar cell light absorption layer preparation method in present pre-ferred embodiments.Can find out, traditional light absorbing zone obtained by solar cell light absorption layer preparation method, its film defects is more, and the light absorbing zone obtained by solar cell light absorption layer preparation method in present pre-ferred embodiments, its crystalline quality is better.
In above-mentioned solar cell light absorption layer preparation method, by present substrate forms the good copper indium diselenide transition layer of crystalline quality by magnetron sputtering method, the solar cell light absorption layer be made up of copper-indium-galliun-selenium material is formed again on the basis of copper indium diselenide transition layer, solar cell light absorption layer is again through isoepitaxial growth gained on the basis of copper indium diselenide transition layer, contribute to the formation of high quality copper-indium-galliun-selenium crystal grain, thus make the crystalline quality of solar cell light absorption layer good, improve the quality of solar cell light absorption layer.
Simultaneously, after forming light absorbing zone, gallium can in the bottom enrichment of light absorbing zone, and copper indium diselenide transition layer merges together with the rich gallium phase crystal grain bottom light absorbing zone, generate larger copper-indium-galliun-selenium crystal grain, avoid gallium enrichment on the bottom of light absorbing zone, improve the performance of the solar cell using this light absorbing zone.
Be below specific embodiment part:
Embodiment 1
At room temperature, the substrate being coated with molybdenum film layer is put on the specimen holder of magnetron sputtering chamber, and magnetron sputtering chamber is vacuumized.Argon gas is passed in magnetron sputtering chamber, open the heating power supply of copper indium two selenium ternary alloy target, adjustment power supply exports heating power to 100W, and closes the baffle plate on copper indium two selenium ternary alloy target, to carry out pre-sputtering to copper indium two selenium ternary alloy target, continue 5 minutes.Open the baffle plate above copper indium two selenium ternary alloy target, continue sputtering 6 minutes, to form copper, indium and selenium film on substrate.Copper, indium and selenium film is heated, in 3 minutes, is progressively warming up to 500 DEG C, and maintain 3 minutes on 500 DEG C, after making copper, indium and selenium film crystallization, form copper indium diselenide transition layer.Open the heating power supply of copper indium callium diselenide (CIGS) quad alloy target, adjustment power supply exports heating power to 150W, simultaneously by silicon to 520 DEG C, open the baffle plate above copper indium callium diselenide (CIGS) quad alloy target, by adopting the magnetron sputtering of copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on copper indium diselenide transition layer, the magnetron sputtering time length is about 3 hours.Obtained solar cell light absorption layer after last naturally cooling.
Embodiment 2:
At room temperature, the substrate being coated with molybdenum film layer is put on the specimen holder of magnetron sputtering chamber, and magnetron sputtering chamber is vacuumized.Argon gas is passed in magnetron sputtering chamber, open the heating power supply of copper indium two selenium ternary alloy target, adjustment power supply exports heating power to 120W, and closes the baffle plate on copper indium two selenium ternary alloy target, to carry out pre-sputtering to copper indium two selenium ternary alloy target, continue 5 minutes.Open the baffle plate above copper indium two selenium ternary alloy target, continue sputtering 8 minutes, to form copper, indium and selenium film on substrate.Copper, indium and selenium film is heated, in 3 minutes, is progressively warming up to 500 DEG C, and maintain 5 minutes on 500 DEG C, after making copper, indium and selenium film crystallization, form copper indium diselenide transition layer.Open the heating power supply of copper indium callium diselenide (CIGS) quad alloy target, adjustment power supply exports heating power to 150W, simultaneously by silicon to 550 DEG C, open the baffle plate above copper indium callium diselenide (CIGS) quad alloy target, by adopting the magnetron sputtering of copper indium callium diselenide (CIGS) quad alloy target, with formation of deposits CIGS thin-film on copper indium diselenide transition layer, the magnetron sputtering time length is about 3 hours.Obtained solar cell light absorption layer after last naturally cooling.
Embodiment 3
At room temperature, the substrate being coated with molybdenum film layer is put on the specimen holder of magnetron sputtering chamber, and magnetron sputtering chamber is vacuumized.Argon gas is passed in magnetron sputtering chamber, open the heating power supply of copper indium two selenium ternary alloy target, adjustment power supply exports heating power to 120W, and closes the baffle plate on copper indium two selenium ternary alloy target, to carry out pre-sputtering to copper indium two selenium ternary alloy target, continue 5 minutes.Open the baffle plate above copper indium two selenium ternary alloy target, continue sputtering 10 minutes, to form copper, indium and selenium film on substrate.Copper, indium and selenium film is heated, in 3 minutes, is progressively warming up to 500 DEG C, and maintain 5 minutes on 500 DEG C, after making copper, indium and selenium film crystallization, form copper indium diselenide transition layer.Open the heating power supply of copper indium callium diselenide (CIGS) quad alloy target, adjustment power supply exports heating power to 150W, simultaneously by silicon to 560 DEG C, open the baffle plate above copper indium callium diselenide (CIGS) quad alloy target, by adopting the magnetron sputtering of copper indium callium diselenide (CIGS) quad alloy target, with formation of deposits CIGS thin-film on copper indium diselenide transition layer, the magnetron sputtering time length is about 3 hours.Obtained solar cell light absorption layer after last naturally cooling.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (8)

1. a solar cell light absorption layer preparation method, comprises the following steps:
By magnetron sputtering method, form copper, indium and selenium film at deposited on substrates; Described by magnetron sputtering method, the step forming copper, indium and selenium film at deposited on substrates is specially: by adopting the magnetron sputtering of copper indium two selenium ternary alloy target, formation of deposits copper, indium and selenium film over the substrate;
High temperature annealing is carried out to described copper, indium and selenium film, makes described copper, indium and selenium film crystallization, to form copper indium diselenide transition layer over the substrate; The thickness of described copper indium diselenide transition layer is 50 ~ 100nm; And
By magnetron sputtering method, adopt copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, obtained solar cell light absorption layer.
2. solar cell light absorption layer preparation method according to claim 1, is characterized in that, adopt described copper indium callium diselenide (CIGS) quad alloy target, on described copper indium diselenide transition layer, the thickness of the CIGS thin-film of formation of deposits is 1.5 μm.
3. solar cell light absorption layer preparation method according to claim 1, is characterized in that, by controlling beginning to described each target material magnetic sputtering or stopping to the closure or openness of baffle plate above each target.
4. solar cell light absorption layer preparation method according to claim 3, is characterized in that, described by magnetron sputtering method, also comprises before forming the step of copper, indium and selenium film at deposited on substrates:
Close the baffle plate above described each target and specimen holder, by magnetron sputtering method, pre-sputtering is carried out to described each target, continue 5 minutes.
5. solar cell light absorption layer preparation method according to claim 1, is characterized in that, described by magnetron sputtering method, formed at deposited on substrates in the step of copper, indium and selenium film, the time length of described magnetron sputtering is 6 ~ 10 minutes.
6. solar cell light absorption layer preparation method according to claim 1, it is characterized in that, described high temperature annealing is carried out to described copper, indium and selenium film, the step of described copper, indium and selenium film crystallization is specially: heat the described substrate having deposited copper, indium and selenium film, in 3 minutes, be progressively warming up to 500 DEG C, and maintain 3 ~ 5 minutes on 500 DEG C.
7. solar cell light absorption layer preparation method according to claim 1, it is characterized in that, described by magnetron sputtering method employing copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, the step of obtained solar cell light absorption layer specifically comprises the following steps:
Described silicon to 500 ~ 600 DEG C of described copper indium diselenide transition layer will be formed;
By adopting the magnetron sputtering of described copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer; And
Stop heating, naturally cool to room temperature, obtained solar cell light absorption layer.
8. solar cell light absorption layer preparation method according to claim 1, it is characterized in that, describedly pass through magnetron sputtering method, adopt copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer, the step of obtained solar cell light absorption layer specifically comprises the following steps:
Under normal temperature, by magnetron sputtering method, adopt described copper indium callium diselenide (CIGS) quad alloy target, formation of deposits CIGS thin-film on described copper indium diselenide transition layer;
The temperature of described CIGS thin-film is risen to 500 ~ 600 DEG C, to carry out high temperature annealing, makes described CIGS thin-film crystallization; And
Stop heating, naturally cool to room temperature, obtained solar cell light absorption layer.
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CN101728461A (en) * 2009-11-06 2010-06-09 清华大学 Method for preparing absorbing layer of thin film solar cell
CN102983222A (en) * 2012-12-06 2013-03-20 许昌天地和光能源有限公司 Preparation method for absorption layer with gradient band gap distribution
CN103077980A (en) * 2013-01-25 2013-05-01 中国农业大学 CIGS (copper indium gallium selenium) thin film solar cell and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN101728461A (en) * 2009-11-06 2010-06-09 清华大学 Method for preparing absorbing layer of thin film solar cell
CN102983222A (en) * 2012-12-06 2013-03-20 许昌天地和光能源有限公司 Preparation method for absorption layer with gradient band gap distribution
CN103077980A (en) * 2013-01-25 2013-05-01 中国农业大学 CIGS (copper indium gallium selenium) thin film solar cell and preparation method thereof

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