CN104404462B - A kind of method that cosputtering low temperature quickly prepares polysilicon membrane - Google Patents
A kind of method that cosputtering low temperature quickly prepares polysilicon membrane Download PDFInfo
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- CN104404462B CN104404462B CN201410649289.XA CN201410649289A CN104404462B CN 104404462 B CN104404462 B CN 104404462B CN 201410649289 A CN201410649289 A CN 201410649289A CN 104404462 B CN104404462 B CN 104404462B
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Abstract
The present invention relates to a kind of method that cosputtering low temperature quickly prepares polysilicon membrane, using magnetron sputtering coating system, using sheet glass as substrate, on substrate Al/a Si composite membranes are prepared using the sputtering of cosputtering method, Al is uniformly filled in a Si films, pass through the Al/Si contents in the controllable made membrane of the power ratio for adjusting Al/Si cosputterings.Si sputtering powers are used to prepare Al/a Si composite membranes for 100 ~ 350W, Al sputtering power 20 ~ 30W cosputterings, then put it into RTP fast -Hankel transform stoves in N2Lower 150 DEG C ~ 300 DEG C 10 ~ 15min of annealing of atmosphere, can obtain crystallization rate is the polysilicon membrane that 45% ~ 90%, crystallite dimension is 20 ~ 100nm, improves crystallization efficiency, realizes low temperature and quickly prepares the polysilicon membrane that crystallization rate is high, uniformity is good.
Description
Technical field
The present invention relates to a kind of method that cosputtering low temperature quickly prepares polysilicon membrane, belong to the efficient silica-base film sun
Field of batteries.
Background technology
Polysilicon（Polycrystalline silicon）Film is because with carrier mobility is high, absorption coefficient is big, light
Conductivity is good and the advantages of high stability, can be widely applied to various opto-electronic devices, such as thin film transistor (TFT), solar cell,
Imaging sensor etc..Polysilicon membrane is obtained by amorphous silicon membrane crystallization mostly, at present, non-crystalline silicon (Amorphous
Silicon) method of film crystallization mainly has：Rapid thermal anneal methods, Excimer-Laser Crystallization, solid phase crystallization method, metal inducement
Method and microwave annealing method etc..Wherein, metal inducement Annealing Crystallization method is because with temperature is low, the time is short, matched with device technology
Feature and the extremely favor of people.People pass through to nickel（Ni）, aluminium（Al）, gold（Au）, copper（Cu）, palladium（Pd）, platinum（Pt）, silver
（Ag）And chromium（Cr）Studied Deng metal inducement non-crystalline silicon (α-Si) film crystallization, it was confirmed that metal inducement amorphous silicon membrane
The driving force of crystallization is the reduction of free energy when non-crystalline silicon is converted into crystalline silicon.In addition, stress also in amorphous silicon membrane, lacking
Fall into and dislocation also provides driving force for amorphous silicon membrane crystallization.It is a kind of metastable that its mechanism is that metal and non-crystalline silicon are formed at its interface
State richness metal silicide, metal and silicon atom carry out counterdiffusion by this silicide, and the metal of induction will be doped into polysilicon
In turn into impurity, silicon can band in introduce an energy level so that cause non-crystalline silicon be converted into polysilicon activation energy drop
It is low.Wherein, metallic aluminium（Al）Caused impurity energy level about 0.069eV, closely valence band so that amorphous silicon turns to crystalline silicon
The activation energy of change is very low, therefore, aluminium as inducing metal can low temperature quickly prepare the polysilicon membrane of superperformance.This
Outside, Al is as group III A element, and being doped in silicon thin film turns into p type impurity.
In recent years, people aluminum-induced low temperature is quickly prepared polysilicon membrane research it is a lot, such as patent（Application number：
201310111724.9）Shanghai University utilizes metal Al catalytic action, first in Grown amorphous silicon membrane, titanium dioxide
Silicon thin film and Al films, form the structure at multiple interface, then carry out two annealing, finally etch surface A l and remove, prepare
Polysilicon membrane；Patent（Application number：201210215016.5）, BJ University of Aeronautics ＆ Astronautics using metal lattice revulsive crystallization it is non-
Polycrystal silicon film, is specifically that metal lattice is first prepared on substrate, is then plated with metallic film, non-crystalline silicon is prepared on metallic film
Film, polysilicon membrane is prepared by annealing；Xi'an University of Technology's beam dagger-axe et al. exists《Artificial lens journal》2011 volume 40 the 1st
The film of .Al/Si/glass structures is disclosed by preparing Al/Si/Al/Si ... on phase, polysilicon is prepared after annealing thin
Film.The method that Al induced low temperatures quickly prepare polysilicon membrane is first to prepare Al/a-Si, a-Si/Al, Al/SiO mostly2/a-
Si and Al/AlO3The composite membrane of/a-Si structures, then carry out preparing by annealing polysilicon membrane.Therefore, silicon thin film is from Al/Si circle
Face starts gradually crystallization, there is the deficiencies such as low crystallization efficiency, lack of homogeneity and delaminating film.In consideration of it, this patent proposes one kind
The method that cosputtering low temperature quickly prepares polysilicon membrane, it is characterized in that using magnetron sputtering coating system, being existed using cosputtering
Al/a-Si composite membranes are prepared on substrate, Al are uniformly filled in a-Si films, it is thin to prepare polysilicon by annealing
Film, has the advantages that big crystallization interface, efficiency high, crystal grain distribution are uniform.
The content of the invention
The problem of being proposed for background technology, the present invention proposes that a kind of cosputtering low temperature quickly prepares the side of polysilicon membrane
Method, is preparation system specifically using magnetron sputtering coating system, local vacuum is 6.0 × 10-4~4.0×10-4pa；Utilize glass
Glass piece is the once purged N again of substrate2Drying；Sputter gas purity is 99.999% Ar gas, and flow is 22sccm；Using pure
The Al targets that the silicon target and purity that degree is 99.999 % are 99.999% are target, and operating air pressure is 6.8 ~ 7.2pa, on substrate altogether
Sputtering prepares Al/a-Si composite membranes, and Al is uniformly filled in a-Si films, and the Al/Si contents in laminated film can be by adjusting
Al/Si sputtering powers ratio is saved to regulate and control；Al/a-Si laminated films are put into N in RTP-500 fast -Hankel transform stoves2Under atmosphere
Made annealing treatment, it is achieved thereby that low temperature quickly prepares polysilicon membrane.
The present invention is implemented according to the following steps
A three target magnetic control sputtering coating systems) are utilized, the base vacuum of sputtering system is evacuated to 6.0 × 10-4~4.0×10-4pa；
B it is) substrate using sheet glass, and after being cleaned by ultrasonic 10 ~ 15min respectively through acetone, absolute ethyl alcohol, deionized water
N is used again2Drying；
C) sputter gas purity is 99.999% Ar gas, and flow is 22sccm；
D it is target for the Al targets that 99.999 % silicon target and purity is 99.999%) to use purity, and operating air pressure is 6.8
~ 7.2pa, cosputtering prepares Al/a-Si composite membranes on substrate；
E) Al is uniformly filled in a-Si films, by adjusting Al/Si sputtering power than controlling in composite membrane
Al/Si contents；
F) Al/a-Si laminated films prepared by Al/Si cosputterings are put into RTP-500 fast -Hankel transform stoves in N2
Made annealing treatment under atmosphere, prepare polysilicon membrane.
The present invention has the advantage that and good effect compared with known technology
1st, the present invention relates to a kind of method that cosputtering method low temperature quickly prepares polysilicon membrane, laminated film knot is increased
The area in crystal boundary face, adds the crystalline rate of film, reduces crystallization temperature and shorten crystallization time；
2nd, polysilicon membrane crystal grain prepared by cosputtering method is evenly distributed in film, improves the uniformity of film.
Brief description of the drawings
Fig. 1 is the flow chart for the method that a kind of cosputtering method low temperature proposed by the present invention quickly prepares polysilicon membrane；
Fig. 2 is the structure of composite membrane for the method that a kind of cosputtering method low temperature proposed by the present invention quickly prepares polysilicon membrane
Figure
Fig. 3 is that a kind of cosputtering method low temperature proposed by the present invention quickly prepares the method for polysilicon membrane under embodiment 1
Polysilicon profile figure；
Fig. 4 is that a kind of cosputtering method low temperature proposed by the present invention quickly prepares the method for polysilicon membrane in embodiment 1
Film Raman schemes.
Embodiment
Embodiment 1
The present embodiment is according to the following steps
Using the target magnetic control sputtering coating systems of JCP-450 tri-, using sheet glass as substrate, and acetone, anhydrous second are used successively
Alcohol and deionized water carry out 10 ~ 15min of ultrasonic cleaning respectively to it, then use N2Drying, with polycrystalline silicon target (% of purity 99.999,
The Ω cm of electrical conductivity 0.02) it is that the Al targets that target and purity are 99.999% are target, sputter gas is the Ar of purity 99.999%
Gas；The base vacuum of sputtering chamber is evacuated to 5.0 × 10-4Pa, opens breather valve and is passed through Ar gas, Ar throughputs are 20sccm, are adjusted
Section sputtering pressure is 6.8pa ~ 7.2pa, and cosputtering prepares Al/a-Si composite membranes, wherein non-crystalline silicon on substrate（a-Si）Film
Sputtering power be 100W ~ 300W, aluminium（Al）The sputtering power of film is 20 ~ 30W, Al/a-Si composite membranes prepared by cosputtering
It is put into fast -Hankel transform stove in N2Under atmosphere, 10 ~ 15min of short annealing is carried out with 150 DEG C ~ 300 DEG C of temperature.Obtain crystalline substance
Rate is up to 45% ~ 90%, and crystallite dimension is 20 ~ 100nm polysilicon membrane.
Claims (2)
1. a kind of method that cosputtering low temperature quickly prepares polysilicon membrane, its feature includes：Using magnetron sputtering coating system,
Double target co-sputtering, wherein non-crystalline silicon are carried out on substrate（a-Si）The sputtering power of film is 100W ~ 300W, aluminium（Al）Film splashes
Power is penetrated for 20 ~ 30W, Al/a-Si composite membranes are prepared, by Al/a-Si composite membranes in quick anneal oven in N2Carried out under atmosphere
Low temperature short annealing, prepares brilliant magnificent rate height, the polysilicon membrane of even grain size；Annealing temperature is moved back at 150 DEG C ~ 300 DEG C
The fiery time is 10 ~ 15min, and its film crystallization rate reaches that 45% ~ 90%, crystallite dimension reaches 30 ~ 80nm.
2. the method as described in claim 1, it is characterized in that, the shape in a-Si film matrix is uniformly filled Al by cosputtering
Into laminated film.
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| CN201410649289.XA CN104404462B (en) | 2014-11-17 | 2014-11-17 | A kind of method that cosputtering low temperature quickly prepares polysilicon membrane |
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| CN201410649289.XA CN104404462B (en) | 2014-11-17 | 2014-11-17 | A kind of method that cosputtering low temperature quickly prepares polysilicon membrane |
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| CN104404462A CN104404462A (en) | 2015-03-11 |
| CN104404462B true CN104404462B (en) | 2017-09-15 |
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| CN104900496A (en) * | 2015-05-05 | 2015-09-09 | 中国科学院宁波材料技术与工程研究所 | Method for preparing face-centered cubic phase silicon crystal film |
| CN105506734A (en) * | 2015-12-18 | 2016-04-20 | 浙江师范大学 | Polycrystalline silicon film and low-temperature preparation method thereof |
| CN109449256B (en) * | 2018-10-26 | 2021-09-21 | 上海彤程电子材料有限公司 | Low-cost production method of silicon-based film for solar cell |
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