CN110957329B - Display module and manufacturing method thereof - Google Patents
Display module and manufacturing method thereof Download PDFInfo
- Publication number
- CN110957329B CN110957329B CN201911205671.0A CN201911205671A CN110957329B CN 110957329 B CN110957329 B CN 110957329B CN 201911205671 A CN201911205671 A CN 201911205671A CN 110957329 B CN110957329 B CN 110957329B
- Authority
- CN
- China
- Prior art keywords
- test
- layer
- display module
- data signal
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The embodiment of the present disclosure provides a display module and a method for manufacturing the display module, the display module includes a display portion, a non-display portion and a test component portion, the non-display portion includes a terminal area, the display module further includes: a substrate base plate; an interlayer insulating layer disposed on the substrate base plate; the metal wire layer is arranged on one side of the interlayer insulating layer, which is far away from the substrate, and comprises a plurality of data signal wires; the test key is arranged on the test component part and is arranged on the same layer as the metal wire layer; the first electrode layer covers the data signal line near the end sub-area and the test key. The corrosion condition of the data signal wire close to one side of the near-end sub-area is judged by detecting the resistance characteristic of the test key, so that the data signal wire close to the near-end sub-area of the non-display part is monitored, the display module comprising the corroded and failed data signal wire is prevented from flowing into the subsequent process, the yield of products is improved, and the production cost is saved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display module and a manufacturing method of the display module.
Background
In the conventional display module manufacturing process of the display panel, a data signal line which is positioned at a non-display part and is close to one side of a terminal area of an integrated circuit needs to be attached to a terminal at one side of an integrated circuit chip in a subsequent module binding process, so that the data signal line at the part needs to be leaked outside and is not covered with a planarization layer and a passivation protective layer. In the subsequent process, the data signal line is often corroded due to the residue of the etching solution, which cannot be found in time, and the etching solution flowing into the subsequent process of the product affects the electrical characteristics of the product, resulting in the yield loss of the product.
Therefore, it is desirable to provide a display module and a method for manufacturing the display module to improve the defect.
Disclosure of Invention
The embodiment of the disclosure provides a display module and a manufacturing method of the display module, which are used for solving the problem that the electrical performance of a product is influenced by corrosion of a data signal line close to one side of a terminal area of an integrated circuit in the conventional display module.
The embodiment of the present disclosure provides a display module, including display part, non-display part and test component part, the test component part set up in the non-display part is kept away from one side of the display part, the non-display part includes the terminal area, the display module still includes:
a substrate base plate;
an interlayer insulating layer disposed on the substrate base plate;
the metal wire layer is arranged on one side, far away from the substrate, of the interlayer insulating layer and comprises a plurality of data signal wires, and the data signal wires are used for connecting the display part and the terminal area;
a test key disposed at the test assembly part and disposed at the same layer as the metal wire layer; and
the first electrode layer is arranged on one side, far away from the interlayer insulating layer, of the metal wire layer and covers the part, close to the terminal area, of the data signal wire and the test key.
According to an embodiment of the present disclosure, a flat layer is disposed on a side of the interlayer insulating layer away from the substrate, the flat layer has an opening in the testing component, and the testing key is disposed in the opening.
According to an embodiment of the present disclosure, a passivation layer is disposed on a side of the planarization layer away from the interlayer insulating layer, and the passivation layer covers the planarization layer and extends to the periphery of the test key.
According to an embodiment of the present disclosure, the test key includes at least two test pads and a test lead, and two ends of the test lead are respectively connected to the test pads.
According to an embodiment of the present disclosure, the shape of the test leads includes an S-shape or a Z-shape.
According to an embodiment of the present disclosure, a gap is formed between adjacent portions of the test leads, and the passivation protection layer is filled into the gap.
According to an embodiment of the present disclosure, the width and height of the test leads are the same as the width and height of the data signal lines.
According to an embodiment of the present disclosure, the display module is a liquid crystal display module or an organic light emitting diode display module.
The embodiment of the disclosure further provides a manufacturing method of the display module, which includes:
providing a substrate base plate, wherein the substrate base plate comprises a display part, a non-display part and a test component part, the non-display part comprises a terminal area, and a metal layer is formed on the substrate base plate;
etching the metal layer to form a data signal line for connecting the display part and the terminal area and a test key positioned on the test component part;
forming a first electrode layer on one side of the metal layer far away from the substrate base plate, wherein the first electrode layer covers the part of the data signal line close to the terminal area and the test key;
etching the first electrode layer to form a first electrode pattern; and
and detecting the resistance characteristic of the test key to judge whether the test key meets the requirement of the quality standard of the product according to a preset resistance characteristic value.
According to an embodiment of the present disclosure, the test key includes at least two test pads and a test lead, and two ends of the test lead are respectively connected to the test pads.
The beneficial effects of the disclosed embodiment are as follows: according to the embodiment of the invention, the test key which is positioned on the same layer as the metal wire layer is arranged on the test component part of the display module, the first electrode layer covers the test key, and after the first electrode layer is etched, the corrosion condition of the data signal wire close to one side of the near-end sub-area is judged by detecting the resistance characteristic of the test key, so that the monitoring of the data signal wire close to the near-end sub-area of the non-display part is realized, the display module containing the corroded and failed data signal wire is prevented from flowing into the subsequent process, the yield of products is improved, and the production cost is saved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some of the disclosed embodiments, and that other drawings can be obtained by those skilled in the art without inventive effort.
Fig. 1 is a schematic plan view illustrating a display module according to an embodiment of the disclosure;
fig. 2 is a schematic cross-sectional structure diagram of a display module according to an embodiment of the disclosure;
FIG. 3 is a schematic diagram of a planar structure of a test key according to an embodiment of the present disclosure;
fig. 4 is a schematic flow chart illustrating a manufacturing method of a display module according to an embodiment of the disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the disclosure may be practiced. Directional phrases used in this disclosure, such as [ upper ], [ lower ], [ front ], [ back ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure. In the drawings, elements having similar structures are denoted by the same reference numerals.
The disclosure is further described with reference to the following drawings and specific embodiments:
the present disclosure provides a display module, which is described in detail below with reference to fig. 1 to 3. As shown in fig. 1, fig. 1 is a schematic plan view of a display module 100 according to an embodiment of the disclosure, where the display module 100 includes a display portion 11, a non-display portion 12 located around the display portion 11, and a testing component portion 13, and the testing component portion 13 is disposed on a side of the non-display portion 12 away from the display portion 11. The display portion 11 is an effective light emitting area of the display module 100, and the non-display portion 12 located around the display portion 11 is used for arranging a driving circuit and various test circuits.
As shown in fig. 1, the non-display portion 12 includes a terminal area 121, the terminal area 121 is used for bonding connection with a circuit integrated chip, and the terminal area 121 and the display portion 11 are connected by a plurality of data signal lines 123 in a metal line layer (not shown). The data signal line 123 needs to be exposed at a side close to the terminal area 121 and is not shielded by other films because the terminal of the ic chip needs to be attached in the subsequent module bonding process. The metal line layer in which the Data signal line 123 is located is a second metal layer which is common in the art, and a Data line connected to the Data signal line 123 and a source and a drain of the thin film transistor which are located in the display portion 11 are also typically disposed in the second metal layer. The cell test unit 122 and the array test unit (not shown) disposed between the terminal area 121 and the display portion 11 in fig. 1 are used for detecting the characteristic value of the display portion 11, and the structure of the cell test unit is the same as that of the array substrate in the prior art and is not described in detail.
The test component part 13 is provided with a plurality of test keys 130, and the plurality of test keys 130 are respectively used for monitoring and controlling contact resistance characteristics of various components such as thin film transistors, line resistance or surface resistance, contact resistance between different conductors, capacitance and the like in a circuit of the display module 100.
As shown in fig. 2, fig. 2 is a schematic cross-sectional structure diagram of a display module 100 according to an embodiment of the disclosure, where the display module 100 includes a substrate 141, a buffer layer 142 disposed on the substrate, a gate insulating layer 143 disposed on the buffer layer 142, and an interlayer insulating layer 144 disposed on the gate insulating layer 143. The metal layer is disposed on the interlayer insulating layer 144, and the first test key 131 and the metal layer are disposed on the same layer.
The interlayer insulating layer 144 is further provided with a flat layer 145, the flat layer 145 is provided with an opening in the test component part 13, the opening exposes the interlayer insulating layer 144 located below the flat layer, and the first test key 131 is arranged in the opening. A passivation layer 146 is disposed on a side of the planarization layer 145 away from the interlayer insulating layer 144, and the passivation layer 146 covers the planarization layer 145 and the opening, and extends to the periphery of the first test key 131, but does not cover the first test key 131.
The passivation layer 146 is further provided with a first electrode layer 147 on a side thereof away from the planarization layer 145, the first electrode layer 147 covers a portion of the data signal line 123 close to the terminal area 121 and the first test key 131, and the first electrode layer 147 generally includes a common electrode in the display portion of the display module 100. The first test key 131 is provided in the test component part 13, and the film structure in which the first test key 131 is provided and the film structure in which the data signal line 123 is provided are set to be the same film structure, so that the degree of corrosion of the data signal line 123 can be detected more accurately.
In this embodiment, the plurality of test keys 130 includes a first test key 131. As shown in fig. 3, fig. 3 is a schematic plan view of a first test key 131 provided in the embodiment of the present disclosure, where the first test key 131 includes two test pads 132 and a test lead 133, two ends of the test lead 133 are respectively connected to the two test pads 132, and when detecting the resistance characteristic of the test key 131, only two probes are required to be respectively contacted with the two test pads 132 and form a path, so as to detect the resistance characteristic of the test key 131.
Specifically, the test pad 132 is used only for contact with a probe, and the test lead 133 is a subject for measuring resistance characteristics. And measuring the set width, height and length of the test lead 133, and calculating to obtain the resistance of the unit routing of the test lead 133. According to the variation of the resistance of the test lead 133, the corrosion degree of the data signal line 123 in the same layer as the test lead 133 can be determined, so that the display module 100 is selected to be discarded or processed in the next process according to the corrosion degree of the data signal line 123. Whether can cause display module assembly 100 to show the problem to carry out certain scope definition according to the difference of the data signal line 123 degree of corrosion, the upper and lower limits that concrete test lead 133 resistance value changes can be according to the different demands of actual production, do not do the restriction here.
Preferably, the width and height of the test lead 133 are the same as those of the data signal line, so as to accurately monitor the degree of corrosion of the data signal line 123.
In the present embodiment, as shown in fig. 3, the test leads are S-shaped, and the passivation layer 146 extends into the gaps formed between the adjacent portions of the test leads 133. The S-shaped structure can reduce the space occupied by the testing component part 13 in the display module 100 and save the production cost under the condition of meeting the requirement of the length of the testing lead 133. Of course, in some embodiments, the test leads 133 may be formed in a Z-shape, or other similar shapes, without limitation.
In this embodiment, the display module 100 is a liquid crystal display module, and specifically, the display module 100 should be an array substrate of the liquid crystal display module. Of course, in some embodiments, the display module 100 may also be an organic light emitting diode display module, and can achieve the same technical effect as a liquid crystal display module, which is not limited herein.
The beneficial effects of the disclosed embodiment are as follows: according to the embodiment of the invention, the test key which is positioned on the same layer as the metal wire layer is arranged on the test component part of the display module, the first electrode layer covers the test key, and after the first electrode layer is etched, the corrosion condition of the data signal wire close to one side of the near-end sub-area is judged by detecting the variable quantity of the resistance value of the test key, so that the monitoring of the data signal wire close to the near-end sub-area of the non-display part is realized, the display module containing the corroded and failed data signal wire is prevented from flowing into the subsequent process, the yield of products is improved, and the production cost is saved.
The embodiment of the disclosure further provides a manufacturing method of the display module, which is described in detail below with reference to fig. 1 to 4. As shown in fig. 4, fig. 4 is a schematic flow chart of a manufacturing method of a display module according to an embodiment of the disclosure, where the method includes:
step S10: providing a substrate base plate 141, wherein the substrate base plate comprises a display part 11, a non-display part 12 and a test component part 13, the non-display part 12 comprises a terminal area 121, and a metal layer is formed on the substrate base plate 141;
step S20: etching the metal layer (not shown in the figure), forming a data signal line 123 for connecting the display part 11 and the terminal area 12, and a test key 131 located in the test component part 13;
step S30: forming a first electrode layer 147 on a side of the metal layer away from the substrate base plate 141, wherein the first electrode layer 147 covers a portion of the data signal line 123 close to the terminal area 121 and the test key 131;
step S40: etching the first electrode layer 147 to form a first electrode pattern (not shown); and
step S50: and detecting the resistance characteristic of the test key 131 to judge whether the product meets the requirement of the quality standard according to a preset resistance characteristic value.
In this embodiment, the test key 131 and the data signal line 123 are disposed on the same layer and are formed by etching a metal layer, so that a process flow for separately manufacturing the test key 131 can be omitted.
In this embodiment, the test key 131 is composed of two test pads 132 and a test lead 133, and two ends of the test lead 133 are respectively connected to the test pads 132. After the first electrode pattern is formed by etching, the first electrode pattern is respectively connected with the two test pads through the probes to form a test path so as to measure the resistance characteristic of the test lead 133, and therefore whether the display module 100 meets the standard requirement of product quality is judged according to a preset resistance characteristic value.
In the step S50, the display module meeting the product quality requirement may continue to be subjected to the subsequent process, and the display module not meeting the product quality requirement may be scrapped to prevent the defective products from flowing into the subsequent process, thereby improving the yield of production and reducing the production cost. Meanwhile, due to the fact that a test key for testing the corrosion condition of the data signal line on the side, close to the terminal area, of the non-display portion is added, the detection rate of the original 0% defective products is improved to 100%, in the subsequent process, the generation proportion of poor pictures of lighting caused by corrosion of the data signal line on the side, close to the terminal area, is from 1.1% to 0%, and the improvement effect reaches 100%.
The embodiment of the disclosure provides a manufacturing method of a display module, which is used for detecting the corrosion condition of a data signal wire on one side of a non-display part close to a terminal area by simultaneously forming a test key arranged on the same layer as the data signal wire on a test component part when a metal layer is etched, so that the display module comprising the data signal wire which is corroded and fails is prevented from flowing into a subsequent process, the yield of products is improved, and the production cost is saved.
In summary, although the present disclosure has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present disclosure, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, so that the scope of the present disclosure is defined by the appended claims.
Claims (7)
1. The utility model provides a display module assembly, its characterized in that includes display part, non-display part and test component part, the test component part set up in non-display part keeps away from one side of display part, non-display part includes the terminal area, display module assembly still includes:
a substrate base plate;
an interlayer insulating layer disposed on the substrate base plate;
the metal wire layer is arranged on one side, far away from the substrate, of the interlayer insulating layer and comprises a plurality of data signal wires, and the data signal wires are used for connecting the display part and the terminal area;
a test key disposed in the test assembly portion and disposed at the same layer as the metal wire layer; and
the first electrode layer is arranged on one side, far away from the interlayer insulating layer, of the metal wire layer and covers the part, close to the terminal area, of the data signal wire and the test key;
the test key comprises at least two test pads and a test lead, and two ends of the test lead are respectively connected with the test pads;
the width and height of the test lead are the same as those of the data signal line;
the film structure of the test key and the film structure of the data signal line are the same.
2. The display module as claimed in claim 1, wherein the interlayer insulating layer is provided with a flat layer on a side thereof away from the substrate base plate, the flat layer is provided with an opening in the test element portion, and the test key is disposed in the opening.
3. The display module of claim 2, wherein a passivation layer is disposed on a side of the planarization layer away from the interlayer insulating layer, and the passivation layer covers the planarization layer and extends around the test key.
4. The display module of claim 1, wherein the shape of the test lead comprises an S-shape or a Z-shape.
5. The display module of claim 3, wherein a gap is formed between adjacent portions of the test leads, and the passivation layer fills the gap.
6. The display module of claim 1, wherein the display module is a liquid crystal display module or an organic light emitting diode display module.
7. A manufacturing method of a display module is characterized by comprising the following steps:
providing a substrate base plate, wherein the substrate base plate comprises a display part, a non-display part and a test component part, the non-display part comprises a terminal area, and a metal layer is formed on the substrate base plate;
etching the metal layer to form a data signal line for connecting the display part and the terminal area and a test key positioned in the test component part;
forming a first electrode layer on one side of the metal layer far away from the substrate base plate, wherein the first electrode layer covers the part of the data signal line close to the terminal area and the test key;
etching the first electrode layer to form a first electrode pattern; and
detecting the resistance characteristic of the test key to judge whether the test key meets the requirement of the quality standard of the product according to a preset resistance characteristic value;
the test key comprises at least two test pads and a test lead, and two ends of the test lead are respectively connected with the test pads;
the width and height of the test lead are the same as those of the data signal line;
the film structure of the test key and the film structure of the data signal line are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911205671.0A CN110957329B (en) | 2019-11-29 | 2019-11-29 | Display module and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911205671.0A CN110957329B (en) | 2019-11-29 | 2019-11-29 | Display module and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110957329A CN110957329A (en) | 2020-04-03 |
| CN110957329B true CN110957329B (en) | 2022-04-26 |
Family
ID=69979265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911205671.0A Active CN110957329B (en) | 2019-11-29 | 2019-11-29 | Display module and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110957329B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354744B (en) | 2020-04-03 | 2021-04-27 | 武汉华星光电技术有限公司 | Array substrate detection key and display panel |
| CN111796713B (en) * | 2020-06-17 | 2023-06-27 | 武汉华星光电技术有限公司 | Display panel |
| KR20230167181A (en) * | 2022-05-30 | 2023-12-08 | 삼성디스플레이 주식회사 | Display device, method of manufacturing the same and tiled display device including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598095A (en) * | 2018-05-23 | 2018-09-28 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, detection method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016008099A1 (en) * | 2014-07-15 | 2016-01-21 | 华为技术有限公司 | Method for detecting substrate crack, substrate and detection circuit |
| KR102454188B1 (en) * | 2016-04-18 | 2022-10-13 | 삼성디스플레이 주식회사 | Display device and method of testing the same |
-
2019
- 2019-11-29 CN CN201911205671.0A patent/CN110957329B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598095A (en) * | 2018-05-23 | 2018-09-28 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, detection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110957329A (en) | 2020-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110957329B (en) | Display module and manufacturing method thereof | |
| KR101587936B1 (en) | Mother substrate for display device and method for manufacturing the same | |
| KR101571768B1 (en) | Display substrate method for repairing a bad thereof and mother substrate having the display substrate | |
| CN100498483C (en) | An active matrix substrate and a liquid crystal display device including the active matrix substrate | |
| JP2000321591A (en) | Liquid crystal display device | |
| JP2013182128A (en) | Display device | |
| KR100585142B1 (en) | Structure of flip chip semiconductor package for testing a bump and method of fabricating the same | |
| CN111367111B (en) | Display panel mother board and preparation method of display panel | |
| US5565767A (en) | Base substrate of multichip module and method for inspecting the same | |
| KR102090578B1 (en) | Substrate of electronic device, electronic device including the same and measuring method of resistance at contact portion | |
| CN116072023A (en) | Display panel and display device | |
| KR20060095693A (en) | Method for forming line for testing array substrate in fringe field switching mode lcd | |
| JP2008028274A (en) | Manufacturing method for semiconductor device | |
| CN111952285B (en) | Array substrate mother board and method for detecting etching residues | |
| CN113870698A (en) | Display panel and test terminal thereof | |
| KR20110088428A (en) | Film type probe unit | |
| CN113675165A (en) | Display device and method for manufacturing the same | |
| KR20110086516A (en) | Probe unit having micro pitch array | |
| KR101164956B1 (en) | Semiconductor device | |
| JP2008141111A (en) | Semiconductor device and method of inspecting chip crack of semiconductor device | |
| CN113506518B (en) | Display panel and display device | |
| KR20130016765A (en) | Electric connecting apparatus for testing electric characteristic of a semiconductor device having thin film resistor and manufacturing method thereof | |
| CN114973993B (en) | Display panel and display device | |
| KR100774623B1 (en) | Test pattern of process change monitor for metal line continuity | |
| KR100462378B1 (en) | Liquid crystal display device and its contact resistance measuring method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |