CN110938870A - Method for simply reducing intermediate envelope of BBO crystal - Google Patents
Method for simply reducing intermediate envelope of BBO crystal Download PDFInfo
- Publication number
- CN110938870A CN110938870A CN201911181824.2A CN201911181824A CN110938870A CN 110938870 A CN110938870 A CN 110938870A CN 201911181824 A CN201911181824 A CN 201911181824A CN 110938870 A CN110938870 A CN 110938870A
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- CN
- China
- Prior art keywords
- crystal
- intermediate envelope
- growth
- simply reducing
- envelope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for simply reducing BBO crystal intermediate envelope, which adopts boric acid and barium carbonate as raw materials, sodium fluoride as fluxing agent, a platinum crucible and a molten salt furnace as growth devices, and when the crystal stops rotating, a beam of green laser with 30-50mW is emitted into the middle area of the crystal surface, and a crystal blank with obviously reduced crystal intermediate envelope is obtained by growth.
Description
Technical Field
The invention relates to the field of artificial crystal growth, in particular to a method for reducing BBO crystal intermediate envelope.
Background
The low-temperature phase barium metaborate β -BaB2O4 is a very important novel nonlinear crystal, has a wide light transmission range, a large effective frequency doubling coefficient, a large birefringence and a high laser damage threshold, is widely applied to laser frequency doubling, and does not have a material with better performance to replace the material at present.
The crystal is grown by a top seed crystal method at present, the temperature is slowly reduced in the crystal growth process, the crystal grows by fluid natural convection, the convection in the middle of the melt of the natural convection is extremely small, and the grown crystal is seriously enveloped in the middle.
Disclosure of Invention
The invention adopts boric acid and barium carbonate as raw materials, sodium fluoride as a fluxing agent, a platinum crucible and a molten salt furnace as growth devices, the crystal rotates in the early growth stage, a melt grows in a convection manner, the middle part is not easy to form an envelope, when the crystal grows to the wall of the pot, seed crystals stop rotating, the convection of the melt is reduced, and at the moment, a green laser beam with the power of 30-50mW is emitted in the middle area of the surface of the crystal by utilizing the characteristics of strong energy, high penetration and the like of the laser, and the formation of defects such as impurities, dislocation and the like in the middle of the crystal is reduced by utilizing the action of the laser, the melt and.
Detailed Description
The first implementation mode comprises the following steps:
uniformly mixing BBO raw materials including barium carbonate, boric acid and sodium fluoride in proportion, melting the materials through a melting furnace, loading the materials into a crucible, placing the crucible into a molten salt furnace, heating the crucible to 1100 ℃, enabling the raw materials to reach a molten state, cooling the melt to 1000 ℃, slowly sinking a seed rod fixed with the BBO seed crystals to the liquid level of the melt, rotating the seed rod at a speed of 5 revolutions per minute, stopping rotating the seed rod when the crystals grow to the wall of the crucible, injecting a beam of 30mW green laser into the middle area of the surface of the crystals, starting cooling at a speed of 1 ℃/d, taking out the crystals after 5 months, irradiating the middle area of the crystals with the green laser to detect the envelope, and obviously reducing the envelope of the crystals.
Claims (1)
1. A method for simply reducing BBO crystal intermediate envelope is characterized in that boric acid and barium carbonate are used as raw materials, sodium fluoride is used as a fluxing agent, a platinum crucible and a molten salt furnace are used as growth devices, when the crystal stops rotating, a beam of green laser with the power of 30-50mW is emitted to the middle area of the crystal surface, and a crystal blank with the obviously reduced crystal intermediate envelope is obtained through growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911181824.2A CN110938870A (en) | 2019-11-27 | 2019-11-27 | Method for simply reducing intermediate envelope of BBO crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911181824.2A CN110938870A (en) | 2019-11-27 | 2019-11-27 | Method for simply reducing intermediate envelope of BBO crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110938870A true CN110938870A (en) | 2020-03-31 |
Family
ID=69908583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911181824.2A Pending CN110938870A (en) | 2019-11-27 | 2019-11-27 | Method for simply reducing intermediate envelope of BBO crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110938870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206401709U (en) * | 2017-01-09 | 2017-08-11 | 哈尔滨理工大学 | Photonic device based on the ultrafast frequencys multiplication of BBO |
-
2019
- 2019-11-27 CN CN201911181824.2A patent/CN110938870A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206401709U (en) * | 2017-01-09 | 2017-08-11 | 哈尔滨理工大学 | Photonic device based on the ultrafast frequencys multiplication of BBO |
Non-Patent Citations (2)
| Title |
|---|
| AKIHITO NISHII ET AL.: "Morphology and orientation of β-BaB2O4 crystals patterned by laser in the inside of samarium barium borate glass", 《 JOURNAL OF SOLID STATE CHEMISTRY》 * |
| 陈伟等: "影响生长大尺寸和高质量β-BBO晶体的因素", 《人工晶体学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
| CN115467010B (en) * | 2022-09-26 | 2023-11-14 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200331 |