CN110952141A - Special growth method of BBO crystal - Google Patents

Special growth method of BBO crystal Download PDF

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Publication number
CN110952141A
CN110952141A CN201911188180.XA CN201911188180A CN110952141A CN 110952141 A CN110952141 A CN 110952141A CN 201911188180 A CN201911188180 A CN 201911188180A CN 110952141 A CN110952141 A CN 110952141A
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CN
China
Prior art keywords
crystal
crucible
growth method
rod
platinum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911188180.XA
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Chinese (zh)
Inventor
王昌运
陈伟
谢发利
张星
陈秋华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujian Castech Crystals Inc
Castech Inc
Original Assignee
Fujian Castech Crystals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujian Castech Crystals Inc filed Critical Fujian Castech Crystals Inc
Priority to CN201911188180.XA priority Critical patent/CN110952141A/en
Publication of CN110952141A publication Critical patent/CN110952141A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12Salt solvents, e.g. flux growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a special growth method of a BBO crystal, wherein a seed crystal rod deviates from the center to obtain a blank capable of cutting a larger-size device.

Description

Special growth method of BBO crystal
Technical Field
The invention relates to the field of artificial crystal growth, in particular to a method for reducing BBO crystal intermediate envelope.
Background
The low-temperature phase barium metaborate β -BaB2O4 is a very important novel nonlinear crystal, has a wide light transmission range, a large effective frequency doubling coefficient, a large birefringence and a high laser damage threshold, is widely applied to laser frequency doubling, and does not have a material with better performance to replace the material at present.
The crystal is grown by a top seed crystal method at present, the temperature is slowly reduced in the crystal growth process, heat is transferred by virtue of a platinum rod, and the lower part of the grown platinum rod of the crystal is enveloped, so that a large-size crystal device cannot be cut.
Disclosure of Invention
The normal crystal grows, and the seed crystal pole aims at crucible central point and puts, and the BBO crystal is because the later stage of growing grows to the crucible wall, and the crystal is changeed and is stopped, mainly leans on the platinum pole to lead to the fact heat transfer, just so causes the crystal growth speed below the platinum pole fast, easily forms the envelope. The invention adopts boric acid and barium carbonate as raw materials, sodium fluoride as a fluxing agent, a platinum crucible, a molten salt furnace and a platinum rod as a growth device, and the seed rod deviates from the central position of the crucible, so that a blank with an envelope also deviating from the center is obtained by growth, and a larger-size device can be cut.
Detailed Description
The first implementation mode comprises the following steps:
uniformly mixing BBO raw materials including barium carbonate, boric acid and sodium fluoride in proportion, melting the materials through a melting furnace, loading the materials into a crucible, placing the crucible into a molten salt furnace, heating the crucible to 1100 ℃, enabling the raw materials to reach a molten state, cooling the melt to 1000 ℃, keeping the seed crystal rod away from the center by 20mm, slowly sinking the seed crystal rod fixed with the BBO seed crystal to the liquid level of the melt, rotating the seed crystal rod at the speed of 5 revolutions per minute, stopping rotating the seed crystal rod when the crystal grows to the wall of the crucible, starting cooling at the speed of 1 ℃/d, taking out the crystal after 5 months, wherein the middle of the crystal is not enveloped, and the enveloping moves below a platinum rod.

Claims (1)

1. A special growth method for BBO crystal features that boric acid and barium carbonate are used as raw materials, sodium fluoride as flux, platinum crucible, molten salt furnace and platinum rod as growth unit, and the seed crystal rod is deviated from the central position of crucible to grow a blank whose envelope is also deviated from the center, so cutting larger size devices.
CN201911188180.XA 2019-11-28 2019-11-28 Special growth method of BBO crystal Pending CN110952141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911188180.XA CN110952141A (en) 2019-11-28 2019-11-28 Special growth method of BBO crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911188180.XA CN110952141A (en) 2019-11-28 2019-11-28 Special growth method of BBO crystal

Publications (1)

Publication Number Publication Date
CN110952141A true CN110952141A (en) 2020-04-03

Family

ID=69978777

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911188180.XA Pending CN110952141A (en) 2019-11-28 2019-11-28 Special growth method of BBO crystal

Country Status (1)

Country Link
CN (1) CN110952141A (en)

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WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200403