CN215103674U - Device that LBO crystal growth used - Google Patents
Device that LBO crystal growth used Download PDFInfo
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- CN215103674U CN215103674U CN202120945702.2U CN202120945702U CN215103674U CN 215103674 U CN215103674 U CN 215103674U CN 202120945702 U CN202120945702 U CN 202120945702U CN 215103674 U CN215103674 U CN 215103674U
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Abstract
The invention discloses a device for LBO crystal growth, which effectively prevents volatile matters from falling into the surface of a crystal and corroding the crystal by utilizing an upper layer structure and a lower layer structure.
Description
Technical Field
The invention relates to the field of artificial crystal growth, in particular to a device for LBO crystal growth.
Background
The LBO crystal is also called as a lithium triborate (LiB3O5) crystal, is an excellent frequency doubling crystal, is a frequency doubling device widely applied at present, has the advantages of good optical uniformity and wider transmission waveband inside the LBO crystal, and is widely applied to the fields of high-power frequency doubling, frequency tripling, frequency quadrupling and sum frequency, difference frequency, ultraviolet multiplying power and the like due to higher matching efficiency and laser damage threshold. And secondly, the method has good application prospects in the aspects of parametric oscillation, parametric amplification, optical waveguide and electro-optical effect.
The crystal is grown by a molten salt method at present, cosolvent fluoride and the like are used in the growth process, and the fluoride is extremely easy to volatilize, so that volatile matters are easy to fall into the surface of the crystal to corrode the crystal in the crystal growth process.
Disclosure of Invention
The invention aims to solve the problem that a fluxing agent such as fluoride volatilizes and falls into the crystal surface to corrode the crystal in the crystal growth process, and designs a growth device which is made of platinum and is cylindrical, wherein a lower platinum sheet is not provided with holes, and an upper platinum sheet is uniformly distributed with small holes. The whole device is sleeved on the seed rod for use. The gas volatilized in the crystal growth process is cooled and condensed through the small holes of the upper platinum sheet, and falls into the lower platinum sheet after reaching a certain weight, so that the volatile matter is effectively prevented from falling into the surface of the crystal to corrode the crystal.
Drawings
FIG. 1 is a schematic view of a seed rod according to the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
the first implementation mode comprises the following steps:
uniformly mixing LBO raw materials including lithium carbonate, boric acid and sodium fluoride in proportion, completely melting by using a melting furnace, loading into a crucible, placing the crucible into a molten salt furnace, heating to 900 ℃, enabling the raw materials to reach a molten state, cooling the melt to a crystallization temperature, inoculating a seed crystal, sleeving a growth device into a seed crystal rod with the LBO seed crystal fixed, slowly sinking the seed crystal rod to the liquid level of the melt, rotating the seed crystal rod at a speed of 30 revolutions per minute, lifting the crystal when the crystal grows to the wall of the crucible, starting to reduce the speed at 20 ℃/d to the room temperature, taking out the crystal, and enabling the surface of the crystal not to be corroded by volatile matters.
Claims (1)
1. The device for LBO crystal growth is characterized in that the device is made of platinum and is cylindrical, holes are not formed in the lower platinum sheet layer, and small holes are uniformly distributed in the upper platinum sheet layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120945702.2U CN215103674U (en) | 2021-05-06 | 2021-05-06 | Device that LBO crystal growth used |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120945702.2U CN215103674U (en) | 2021-05-06 | 2021-05-06 | Device that LBO crystal growth used |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215103674U true CN215103674U (en) | 2021-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120945702.2U Active CN215103674U (en) | 2021-05-06 | 2021-05-06 | Device that LBO crystal growth used |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215103674U (en) |
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2021
- 2021-05-06 CN CN202120945702.2U patent/CN215103674U/en active Active
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