CN103225107A - Method for rapid growth of high-quality BBO crystal - Google Patents
Method for rapid growth of high-quality BBO crystal Download PDFInfo
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- CN103225107A CN103225107A CN2013101137967A CN201310113796A CN103225107A CN 103225107 A CN103225107 A CN 103225107A CN 2013101137967 A CN2013101137967 A CN 2013101137967A CN 201310113796 A CN201310113796 A CN 201310113796A CN 103225107 A CN103225107 A CN 103225107A
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Abstract
The invention provides a method for rapid growth of high-quality BBO crystal. The method uses barium carbonate and boric acid as main raw materials, sodium fluoride or sodium oxide as a flux, and a molten salt growth furnace as a growth device. A platinum cooling device is added on growth surface of the crystal, so as to increase a contact area of the platinum with the crystal, take away the heat on the crystal surface through the platinum, increase a degree of supercooling and improve a crystal growth rate. The platinum cooling device is a double-layer structure, wherein the flux volatilized during a crystal growth process condenses on an upper-layer platinum sheet and then drops to a low-layer platinum sheet, thereby preventing the flux to corrode the crystal. By using the growth method provided by the invention, a growth period of the BBO crystal can be shortened, and the high-quality BBO crystal can be obtained.
Description
Technical field
The present invention relates to field of crystal growth, be specifically related to a kind of high quality bbo crystal method of growth fast.
Background technology
Low-temperature phase barium metaborate (β-BaB2O4) in non-linear optic crystal, be that a kind of comprehensive advantage is obvious, well behaved crystal, it has extremely wide transparency range, the bigger angle that is complementary, higher optic damage threshold value, the temperature coupling and the good optical homogeneity in broadband, extensively apply to two of Nd:YAG and Nd:YLF laser, three, four, five frequencys multiplication, the frequency multiplication of dye laser, frequency tripling and mixing, two of Ti:Sappire and Alexandrite laser, three, quadruple, optical parameter amplifier (OPA) and optical parametric oscillator (OPO), argon ion, the frequencys multiplication of ruby and Cu vapor laser etc. have a wide range of applications especially for the frequency tripling of Nd:YAG laser apparatus.Yet there are no the over-all properties better material and replace it.
This crystalline conventional growth method mainly adopts the top-seeded solution growth growth, utilize Sodium Fluoride or sodium oxide to be fusing assistant, adopt slow cooling method growth, this method growth cycle reach 7～8 months and this method process of growth in the evaporable fusing assistant fall into plane of crystal easily, the corrosion crystal directly influences crystal mass, causes the crystalline growth cycle long, have a big risk the cost height.The present invention improves the crystal yield rate in order to shorten the crystalline growth cycle, has adopted special crucible structure, effectively gets rid of latent heat, has improved the crystal growth condensate depression, has shortened the crystalline growth cycle greatly.
Summary of the invention
The purpose of this invention is to provide a kind of high quality bbo crystal method of growth fast, the realization bbo crystal is grown fast, reduces growth cycle, obtains the high quality bbo crystal simultaneously.
The present invention realizes in the following way: a kind of high quality bbo crystal is the method for growth fast, and adopting barium carbonate and boric acid is main raw material, and Sodium Fluoride or sodium oxide are fusing assistant, and the flux growth stove is a growing apparatus.When crystal growth during to crucible wall, increase a platinum heat abstractor at crystal growing surface, described platinum heat abstractor is made up of upper cover plate and lower cover, increase platinum and crystalline contact area by increasing heat abstractor, the heat of plane of crystal is taken away by platinum, improve condensate depression, thereby raising crystal growth rate, and the platinum heat abstractor is a bilayer structure, the fusing assistant that volatilizes in the crystal growing process is fallen into lower cover after upper cover plate condenses, thereby prevent fusing assistant corrosion crystal, improved crystal mass.
Description of drawings
Fig. 1 is a platinum heat abstractor scheme of installation of the present invention, and wherein 1 is that upper cover plate, 2 is lower cover, and 3 is seed rod, and 4 is bbo crystal, and 5 is crucible.
Embodiment
Embodiment one: take by weighing a certain amount of barium carbonate, boric acid and Sodium Fluoride, satisfy the BaB2O4:NaF=2:1(mol ratio) mixing in Raw material pail.Mixed material is fused to reacting completely in 1000 ℃ silicon carbide rod furnace.Pour molten good material into Platinum crucible and place molten salt furnace, be warming up to 980 ℃, constant temperature 18h is then under more than the temperature of saturation 10 ℃.To be fixed on seed crystal on the seed rod in advance slowly down to molten surface, 4～10r/min rotates, and falls 7 ℃ after half an hour, crystal begins growth, and later 1～2 ℃/day cooling is when crystal growth during to crucible wall, take out lid, put into the platinum heat abstractor to plane of crystal, heat up 5 ℃ constant temperature 24 hours, begin 2～4 ℃ of coolings, grew 4～5 months, and stopped cooling, crystal is come out of the stove.
Embodiment two: take by weighing a certain amount of barium carbonate, boric acid and sodium oxide, satisfy the BaB2O4:NaO=3.5:1(mol ratio) mixing in Raw material pail.Mixed material is fused to reacting completely in 1000 ℃ silicon carbide rod furnace.The Platinum crucible of pouring molten good material into particular design places the fused salt pulling stove, is warming up to 980 ℃, and constant temperature 18h is then under more than the temperature of saturation 10 ℃.To be fixed on seed crystal on the seed rod in advance slowly down to molten surface, 4～10r/min rotates, and falls 8 ℃ after half an hour, crystal begins growth, and later 1～2 ℃/day cooling is when crystal growth during to crucible wall, take out lid, put into platinum heat abstractor device to plane of crystal, heat up 5 ℃ constant temperature 24 hours, begin 2～4 ℃ of coolings, grew 4～5 months, and stopped cooling, crystal is come out of the stove.
Claims (2)
1. the high quality bbo crystal method of growth fast, adopting barium carbonate and boric acid is main raw material, and Sodium Fluoride or sodium oxide are fusing assistant, and the flux growth stove is a growing apparatus, it is characterized in that: crystal growing surface increases a platinum heat abstractor.
2. a kind of high quality bbo crystal according to claim 1 is the method for growth fast, and it is characterized in that: described platinum heat abstractor is made up of upper cover plate and lower cover.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013101137967A CN103225107A (en) | 2013-04-03 | 2013-04-03 | Method for rapid growth of high-quality BBO crystal |
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| CN2013101137967A CN103225107A (en) | 2013-04-03 | 2013-04-03 | Method for rapid growth of high-quality BBO crystal |
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| CN103225107A true CN103225107A (en) | 2013-07-31 |
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| CN2013101137967A Pending CN103225107A (en) | 2013-04-03 | 2013-04-03 | Method for rapid growth of high-quality BBO crystal |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532350A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院合肥物质科学研究院 | Pb<2+> ion-doped high temperature phase barium metaborate crystal and growing method and use thereof |
| WO2015058477A1 (en) * | 2013-10-23 | 2015-04-30 | 中国科学院新疆理化技术研究所 | Deep ultraviolet non-linear optical crystal of barium borate hydrate, preparation method therefor and use thereof |
| CN112126980A (en) * | 2020-09-11 | 2020-12-25 | 福建福晶科技股份有限公司 | Crystal growth method for reducing absorption of LBO crystal body and crystal prepared by crystal growth method |
| CN115233286A (en) * | 2022-08-11 | 2022-10-25 | 山东重山光电材料股份有限公司 | beta-BBO crystal growth method using cesium oxide as fluxing agent |
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225951A (en) * | 1998-02-11 | 1999-08-18 | 中国科学院福建物质结构研究所 | Low-temp.-phase barium metaborate large single crystal growing by air-cooled crystal growth method |
| CN101365324A (en) * | 2007-08-09 | 2009-02-11 | 锦通科技金属有限公司 | Magnesium alloy composite heat radiating metal |
| CN102108550A (en) * | 2010-11-22 | 2011-06-29 | 福建福晶科技股份有限公司 | Method for preventing severe volatilization during growth process of cesium triborate |
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN202390578U (en) * | 2011-12-19 | 2012-08-22 | 元亮科技有限公司 | Growing device of garnet type mono-crystalline |
-
2013
- 2013-04-03 CN CN2013101137967A patent/CN103225107A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1225951A (en) * | 1998-02-11 | 1999-08-18 | 中国科学院福建物质结构研究所 | Low-temp.-phase barium metaborate large single crystal growing by air-cooled crystal growth method |
| CN101365324A (en) * | 2007-08-09 | 2009-02-11 | 锦通科技金属有限公司 | Magnesium alloy composite heat radiating metal |
| CN102108550A (en) * | 2010-11-22 | 2011-06-29 | 福建福晶科技股份有限公司 | Method for preventing severe volatilization during growth process of cesium triborate |
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN202390578U (en) * | 2011-12-19 | 2012-08-22 | 元亮科技有限公司 | Growing device of garnet type mono-crystalline |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015058477A1 (en) * | 2013-10-23 | 2015-04-30 | 中国科学院新疆理化技术研究所 | Deep ultraviolet non-linear optical crystal of barium borate hydrate, preparation method therefor and use thereof |
| CN104532350A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院合肥物质科学研究院 | Pb<2+> ion-doped high temperature phase barium metaborate crystal and growing method and use thereof |
| CN104532350B (en) * | 2014-12-24 | 2017-10-27 | 中国科学院合肥物质科学研究院 | Mix Pb2+Ion at high temperature phase barium metaborate crystal and its growing method and purposes |
| CN112126980A (en) * | 2020-09-11 | 2020-12-25 | 福建福晶科技股份有限公司 | Crystal growth method for reducing absorption of LBO crystal body and crystal prepared by crystal growth method |
| CN115233286A (en) * | 2022-08-11 | 2022-10-25 | 山东重山光电材料股份有限公司 | beta-BBO crystal growth method using cesium oxide as fluxing agent |
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
| CN115467010B (en) * | 2022-09-26 | 2023-11-14 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
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Application publication date: 20130731 |