CN106757341A - A kind of special growth technique for reducing bbo crystal envelope - Google Patents
A kind of special growth technique for reducing bbo crystal envelope Download PDFInfo
- Publication number
- CN106757341A CN106757341A CN201710007627.3A CN201710007627A CN106757341A CN 106757341 A CN106757341 A CN 106757341A CN 201710007627 A CN201710007627 A CN 201710007627A CN 106757341 A CN106757341 A CN 106757341A
- Authority
- CN
- China
- Prior art keywords
- crystal
- boiler tube
- stove
- crucible
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
Abstract
The present invention is wound using stove silk along boiler tube vertical direction, and a quarter of boiler tube area does not grow bbo crystal around the revolving burner of stove silk, and crystal growth began is to terminating overall process, crucible is motionless, stove rotates, and 2.5 turns/min of rotating speed obtains the bbo crystal that envelope is significantly reduced.
Description
Technical field
The present invention relates to field of crystal growth, more particularly to a kind of growth technique for reducing bbo crystal envelope.
Background technology
Low-temperature phase barium metaborate β-BaB2O4 are a kind of very important new nonlinear crystals measureds, with printing opacity model wide
Enclose, big effective Clock Multiplier Factor, big birefringence and laser damage threshold high are widely used in laser freuqency doubling, at present also
There are no the more preferable material of performance and replace it.
Although the crystal has excellent performance, real crystal growth is wanted to obtain the crystal boule of large scale high-quality
It is not easy to, there are some quality problems in crystal：Mainly there are middle envelope, bubble, growth line etc..
The content of the invention
The purpose of the present invention is to probe into a kind of special growth technique for reducing bbo crystal envelope, and the present invention is by such as lower section
Formula is realized：
S1 winds the revolving burner stove silk of crystal growth along boiler tube vertical direction, and a quarter of boiler tube area is not around stove silk；
The boiler tube that S2 will wind stove silk is placed in molten salt furnace, is started to warm up to 1100 DEG C, constant temperature 24h, 10 more than saturation temperature
Seed crystal at DEG C, crucible is remained stationary as, and stove starts rotation, 2.5 turns/min of rotating speed, 4 turns/min of crystal rotation, when crystal growth is fast
During to sidewall of crucible, stop brilliant turn, start to lower the temperature with the speed of 1 DEG C/day, stopped growing after 180 days, using converter, take out crystal,
Room temperature is annealed to, high-quality bbo crystal is obtained.
Brief description of the drawings
Fig. 1 revolving burner schematic diagrames；
Fig. 2 stoves silk winding schematic diagram.
Specific embodiment
Embodiment one：A certain amount of barium carbonate, boric acid and sodium fluoride are weighed, BaB2O4 is met:NaF=2:1（Mol ratio）In
Mixed in Raw material pail.Mixed material is melted complete to reaction in 1000 DEG C of silicon carbide rod furnace.The material that will have been melted pours into platinum
Crucible is placed in revolving burner, is warming up to 980 DEG C, and constant temperature 18h, stove starts to be rotated with 4r/min, then more than saturation temperature
At 10 DEG C.To molten surface under the seed crystal that will be fixed in advance on seed rod is slow, 4r/min is rotated, and 7 are dropped after half an hour
DEG C, crystal growth began, until crystal is fast to stop seed rod rotation to sidewall of crucible, is lowered the temperature with 1 DEG C/day, is lowered the temperature 180 days, crystal
Growth terminates, and using converter, takes out crystal, is annealed to room temperature.
Claims (1)
1. it is a kind of reduce bbo crystal envelope special growth technique, it is characterised in that the technique includes：
S1 winds the revolving burner stove silk of crystal growth along boiler tube vertical direction, and a quarter of boiler tube area is not around stove silk；
The boiler tube that S2 will wind stove silk is placed in molten salt furnace, is started to warm up to 1100 DEG C, constant temperature 24h, 10 more than saturation temperature
Seed crystal at DEG C, crucible is remained stationary as, and stove starts rotation, 2.5 turns/min of rotating speed, 4 turns/min of crystal rotation, when crystal growth is fast
During to sidewall of crucible, stop brilliant turn, start to lower the temperature with the speed of 1 DEG C/day, stopped growing after 180 days, using converter, take out crystal,
It is annealed to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007627.3A CN106757341A (en) | 2017-01-05 | 2017-01-05 | A kind of special growth technique for reducing bbo crystal envelope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007627.3A CN106757341A (en) | 2017-01-05 | 2017-01-05 | A kind of special growth technique for reducing bbo crystal envelope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106757341A true CN106757341A (en) | 2017-05-31 |
Family
ID=58950371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007627.3A Pending CN106757341A (en) | 2017-01-05 | 2017-01-05 | A kind of special growth technique for reducing bbo crystal envelope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106757341A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475772A (en) * | 2017-08-30 | 2017-12-15 | 福建福晶科技股份有限公司 | A kind of bbo crystal method for fast growing |
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1057868A (en) * | 1990-07-06 | 1992-01-15 | 中国科学院上海硅酸盐研究所 | Barium metaborate (the constant level Czochralski grown of monocrystalline of β-BBO) |
| CN102011186A (en) * | 2010-11-22 | 2011-04-13 | 福建福晶科技股份有限公司 | Middle seed crystal method for growing high-quality (beta-BaB2O4) BBO crystals |
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN106048712A (en) * | 2016-06-14 | 2016-10-26 | 福建福晶科技股份有限公司 | Growth process capable of reducing barium boron oxide (BBO) crystal envelope |
-
2017
- 2017-01-05 CN CN201710007627.3A patent/CN106757341A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1057868A (en) * | 1990-07-06 | 1992-01-15 | 中国科学院上海硅酸盐研究所 | Barium metaborate (the constant level Czochralski grown of monocrystalline of β-BBO) |
| CN102011186A (en) * | 2010-11-22 | 2011-04-13 | 福建福晶科技股份有限公司 | Middle seed crystal method for growing high-quality (beta-BaB2O4) BBO crystals |
| CN102383182A (en) * | 2011-10-23 | 2012-03-21 | 福建福晶科技股份有限公司 | Molten-salt growth method for reducing central envelope of BBO(Barium Boron Oxide) crystals |
| CN106048712A (en) * | 2016-06-14 | 2016-10-26 | 福建福晶科技股份有限公司 | Growth process capable of reducing barium boron oxide (BBO) crystal envelope |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475772A (en) * | 2017-08-30 | 2017-12-15 | 福建福晶科技股份有限公司 | A kind of bbo crystal method for fast growing |
| CN115467010A (en) * | 2022-09-26 | 2022-12-13 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
| CN115467010B (en) * | 2022-09-26 | 2023-11-14 | 福建福晶科技股份有限公司 | Low-temperature phase BBO crystal growth device and growth method |
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Application publication date: 20170531 |
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